TW202316542A - 靜電吸盤、基板支持器及基板處理裝置 - Google Patents

靜電吸盤、基板支持器及基板處理裝置 Download PDF

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Publication number
TW202316542A
TW202316542A TW111130537A TW111130537A TW202316542A TW 202316542 A TW202316542 A TW 202316542A TW 111130537 A TW111130537 A TW 111130537A TW 111130537 A TW111130537 A TW 111130537A TW 202316542 A TW202316542 A TW 202316542A
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TW
Taiwan
Prior art keywords
contact portion
substrate
hole
substrate contact
protrusions
Prior art date
Application number
TW111130537A
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English (en)
Chinese (zh)
Inventor
下田将司
佐佐木康晴
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202316542A publication Critical patent/TW202316542A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW111130537A 2021-08-20 2022-08-15 靜電吸盤、基板支持器及基板處理裝置 TW202316542A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163235231P 2021-08-20 2021-08-20
US63/235,231 2021-08-20
JP2021148145 2021-09-10
JP2021-148145 2021-09-10

Publications (1)

Publication Number Publication Date
TW202316542A true TW202316542A (zh) 2023-04-16

Family

ID=85240649

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111130537A TW202316542A (zh) 2021-08-20 2022-08-15 靜電吸盤、基板支持器及基板處理裝置

Country Status (5)

Country Link
US (1) US20240186917A1 (https=)
JP (1) JPWO2023022041A1 (https=)
KR (1) KR20240051154A (https=)
TW (1) TW202316542A (https=)
WO (1) WO2023022041A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025004883A1 (ja) * 2023-06-29 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置
KR20250142237A (ko) * 2024-03-21 2025-09-30 에이에스엠 아이피 홀딩 비.브이. 서셉터, 반도체 처리 시스템, 및 관련 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3639686B2 (ja) * 1996-01-31 2005-04-20 キヤノン株式会社 基板の保持装置とこれを用いた露光装置、及びデバイスの製造方法
JP3983387B2 (ja) * 1998-09-29 2007-09-26 日本碍子株式会社 静電チャック
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
KR100511854B1 (ko) * 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
JP4061131B2 (ja) * 2002-06-18 2008-03-12 キヤノンアネルバ株式会社 静電吸着装置
KR20040070008A (ko) * 2003-01-29 2004-08-06 쿄세라 코포레이션 정전척
JP4674792B2 (ja) * 2003-12-05 2011-04-20 東京エレクトロン株式会社 静電チャック
JP4636807B2 (ja) * 2004-03-18 2011-02-23 キヤノン株式会社 基板保持装置およびそれを用いた露光装置
JP4869610B2 (ja) * 2005-03-17 2012-02-08 東京エレクトロン株式会社 基板保持部材及び基板処理装置
KR102200053B1 (ko) * 2013-02-13 2021-01-08 엔테그리스, 아이엔씨. 중합체 양각을 갖는 진공 척
JP2013153171A (ja) * 2013-02-15 2013-08-08 Panasonic Corp プラズマ処理装置及びプラズマ処理方法
KR20160015510A (ko) * 2014-07-30 2016-02-15 삼성전자주식회사 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법
JP6948822B2 (ja) 2017-04-25 2021-10-13 東京エレクトロン株式会社 基板処理装置及び基板取り外し方法

Also Published As

Publication number Publication date
WO2023022041A1 (ja) 2023-02-23
JPWO2023022041A1 (https=) 2023-02-23
US20240186917A1 (en) 2024-06-06
KR20240051154A (ko) 2024-04-19

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