TW202249086A - 半導體處理腔室中的旋轉偏壓基座和靜電夾盤 - Google Patents
半導體處理腔室中的旋轉偏壓基座和靜電夾盤 Download PDFInfo
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- TW202249086A TW202249086A TW111112821A TW111112821A TW202249086A TW 202249086 A TW202249086 A TW 202249086A TW 111112821 A TW111112821 A TW 111112821A TW 111112821 A TW111112821 A TW 111112821A TW 202249086 A TW202249086 A TW 202249086A
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Abstract
本文提供了基板支撐件的實施例。在一些實施例中,用於化學氣相沉積(CVD)腔室的基板支撐件包括:用於支撐基板的基座,其中該基座包括耦合到基座主體的介電板;以及旋轉接頭,其連接到基座,其中旋轉接頭包括圍繞轉子設置的固定外殼;連接到旋轉接頭的驅動組件;冷卻劑接頭,其連接到旋轉接頭並且具有冷卻劑入口,該冷卻劑入口透過冷卻劑管線流體地連接到設置在基座中的冷卻劑通道;RF旋轉接合,其耦合到冷卻劑接頭並具有配置為將基座耦合到RF偏壓電源的RF連接器;以及RF導管,其從RF連接器透過基座主體的中心開口延伸到基座以向基座提供RF偏壓。
Description
本公開發明的實施例總體上涉及基板處理設備。
基板處理系統通常包括處理腔室,以用於在設置在其中的一或更多個基板上執行期望的處理,例如沉積處理。化學氣相沉積(CVD)處理腔室通常用於半導體工業中以將薄膜沉積到由佈置在CVD處理腔室中的基板支撐件支撐的基板上。CVD處理腔室可以採用電漿技術來執行具有可流動CVD的間隙填充處理。然而,當基板中的特徵尺寸變得更小時,很難在CVD間隙填充處理中獲得高品質的薄膜。
因此,發明人提供了用於CVD腔室的改進的基板支撐件的實施例。
本文提供了基板支撐件的實施例。在一些實施例中,以用於化學氣相沉積(CVD)腔室的基板支撐件包括:用於支撐基板的基座,其中該基座包括耦合到基座主體的介電板;以及旋轉接頭(union),其連接到基座,其中旋轉接頭包括圍繞轉子設置的固定外殼;驅動組件,其連接到旋轉接頭並被配置為旋轉轉子以旋轉基座;冷卻劑接頭,其連接到旋轉接頭並且具有冷卻劑入口,該冷卻劑入口透過冷卻劑管線流體地連接到設置在基座中的冷卻劑通道;RF旋轉接合,其耦合到冷卻劑接頭並具有配置為將基座耦合到RF偏壓電源的RF連接器;RF導管,其從RF連接器透過基座主體的中心開口延伸到基座以向基座提供RF偏壓。
在一些實施例中,以用於化學氣相沉積(CVD)腔室的基板支撐件包括:用於支撐基板的基座,其中該基座包括耦合到基座主體的介電板,其中該基座包括單極電極或雙極電極;旋轉接頭,其連接到基座,其中旋轉接頭包括圍繞轉子設置的固定外殼;驅動組件,其連接到旋轉接頭並被配置為旋轉轉子以旋轉基座;冷卻劑接頭,其連接到旋轉接頭並且具有冷卻劑入口,該冷卻劑入口透過冷卻劑管線流體地連接到設置在基座中的冷卻劑通道;RF旋轉接合,其耦合到冷卻劑接頭並具有配置為將基座耦合到RF偏壓電源的RF連接器;RF導管從RF連接器透過基座主體的中心開口延伸到基座;波紋管組件,其設置在基座主體周圍;升降組件,其連接到波紋管組件並配置成選擇性地升高或降低基座。
在一些實施例中,化學氣相沉積(CVD)處理腔室包括:腔室主體,其在其中限定內部容積;噴頭,其設置在內部容積中,以用於將一或更多種處理氣體供應到內部容積中;基板支撐件,其設置在與噴頭相對的內部容積中,其中基板支撐件包括:用於支撐基板的基座,其中,基座包括耦合到基座主體的介電板;旋轉接頭,其連接到基座,其中旋轉接頭包括圍繞轉子設置的固定外殼;驅動組件,其連接到旋轉接頭並被配置為旋轉轉子以旋轉基座;冷卻劑接頭,其連接到旋轉接頭並且具有冷卻劑入口,該冷卻劑入口透過冷卻劑管線流體地連接到設置在基座中的冷卻劑通道;RF旋轉接合,其連接到冷卻劑接頭並具有RF連接器;RF導管從RF連接器透過基座主體的中心開口延伸到基座;RF偏壓電源耦合到RF導管並被配置為透過RF導管向介電板提供RF功率。
下面描述本公開發明的其他和進一步的實施例。
本文提供了基板支撐件的實施例。本文提供的基板支撐件有利地包括用於CVD處理腔室的旋轉可偏壓基座。基座的旋轉特徵和偏壓特徵的組合為高縱橫比(aspect ratio)特徵、間隙填充均勻性和高密度膜品質提供了增強的間隙填充。基板支撐件包括射頻(RF)旋轉接合,其配置為向基座提供連續波或脈衝RF偏壓功率。
圖1描繪了根據本公開發明的至少一些實施例的用於沉積膜的裝置100的截面示意視圖。根據本公開發明的實施例,裝置100通常包括用於沉積層的化學氣相沉積(CVD)腔室101。在一些實施例中,如圖1所示,裝置100可以包括具有兩個CVD腔室101的雙腔室或成對腔室配置。在一些實施例中,成對腔室具有兩個隔離的內部容積(用於處理兩個基板,每個處理區域一個基板),使得在每個區域中經歷的流速約是進入裝置100的流速的一半。在一些實施例中,裝置100是獨立的。在一些實施例中,裝置100是多腔室處理工具的一部分。
裝置100具有腔室主體102,其限定了單獨的內部容積118、120。內部容積118、120中的每一個都具有佈置在其中的基板支撐件128,以用於支撐CVD腔室101內的基板115。在一些實施例中,基板支撐件128包括加熱元件(未示出)。優選地,每個基板支撐件128透過支撐軸126可移動地設置在內部容積118、120之一者中,支撐軸126延伸穿過腔室主體102的底部,在該底部,支撐軸126連接到升降組件103。
內部容積118、120通常還包括氣體分配組件108,其設置成藉由腔室蓋104以將氣體輸送進入內部容積118、120中。在一些實施例中,每個處理區域的氣體分配組件108包括氣體入口通道140,其將氣體從氣流控制器119輸送到噴頭142中。氣流控制器119通常用於控制和調節進入CVD腔室101的不同處理氣體流速。如果使用液體前驅物,其他流量控制部件可以包括液流噴射閥和液流控制器(未顯示)。在一些實施例中,噴頭142包括環形基板148、面板146和位於環形基板148和面板146之間的擋板144。噴頭142包括複數個開口(未示出),在處理期間透過這些開口注入氣體混合物。
射頻(RF)電源125向噴頭142提供偏壓電位以促進在噴頭組件和基板支撐件128之間產生電漿。在一些實施例中,RF電源125透過RF匹配網路124耦合到噴頭142。在電漿增強化學氣相沉積處理期間,基板支撐件128可用作陰極以在腔室主體102內產生RF偏壓。基板支撐件128有利地電耦合到偏壓電源150以在CVD腔室101中的基板115上產生偏壓電壓。通常,在腔室主體102電接地的同時將RF電壓施加到陰極。施加到基板支撐件128的功率在基板115的上表面上產生以負電壓形式的基板偏壓。負電壓用於將離子從在CVD腔室101中形成的電漿吸引到基板115的上表面。在一些實施例中,偏壓電源150透過RF匹配網路152耦合到基板支撐件128。
在處理期間,處理氣體徑向分佈在整個基板表面上以執行間隙填充處理。透過將來自RF電源125的RF能量施加到用作通電電極的噴頭142,以由一或更多種處理氣體或氣體混合物形成電漿。當基板115暴露於電漿和在其中所提供的反應性氣體時會發生膜沉積。腔室壁112通常接地。RF電源125可以向噴頭142提供單頻或混頻RF訊號,以增強引入到內部容積118、120中的任何氣體的分解。
系統控制器134控制各種組件的功能,例如RF電源125、偏壓電源150、升降組件103、氣流控制器119和其他相關的腔室和/或處理功能。系統控制器134執行儲存在記憶體138中的系統控制軟體,在優選實施例中,記憶體138是硬碟驅動器並且可以包括模擬和數位輸入/輸出板、界面板和步進馬達控制器板。光學和/或磁性感測器通常用於移動和決定可移動機械組件的位置。上述CVD腔室101的描述主要是為了說明的目的,也可以採用其他電漿處理腔室來實施本發明的實施例。
在基板115上沉積的期間,受控電漿通常透過使用RF電源125施加到噴頭的RF能量在與基板115相鄰的腔室中形成,如圖1所示;可替代地或附加地,RF功率可以被提供給基板支撐件128。可以使用高頻RF(HFRF)功率以及低頻RF(LFRF)功率(例如,雙頻RF)、恆定RF、脈衝RF或任何其他合適的電漿產生技術來產生電漿。RF電源125可以提供約1MHz和約300MHz之間的單頻RF。此外,RF電源125還可以提供約300Hz和約1,000kHz之間的單頻LFRF以提供混合頻率以增強引入到處理腔室中的處理氣體的反應性物質的分解。RF功率可以經循環或脈衝化以減少基板的加熱並促進沉積膜中的更大孔隙率。合適的RF功率可以是在約10W和約5,000W之間的範圍內(優選地在約200W和約3,000W之間的範圍內)的功率。合適的LFRF功率可以是在約0W和約5,000W之間的範圍內的功率(優選地在約0W和約500W之間的範圍內)。
在沉積期間,偏壓電源150可以被配置為提供約1kW到約3kW的功率。在一些實施例中,偏壓電源150被配置為以約0.5MHz到約30MHz的單頻RF供應偏壓功率,例如,頻率範圍可以從約0.5MHz到約15MHz。在一些實施例中,偏壓電源150被配置為以多個RF頻率提供偏壓功率。在一些實施例中,在沉積期間,基板115可以保持在約-20°C和約100°C之間的溫度。
圖2描繪了根據本公開發明的至少一些實施例的基板支撐件128的截面示意視圖。基板支撐件128包括具有支撐表面268以支撐基板115的基座204。基座204通常包括耦合到基座主體210的介電板206。在一些實施例中,如圖2和3所示,基座204包括設置在介電板206中的單極電極208。基座主體210包括連接到桿218的接地板216。在一些實施例中,接地板216包括用於使冷卻劑流過其中的複數個冷卻劑通道214。冷卻劑可以是任何合適的冷卻劑,例如水、乙二醇、聚醚流體等。基座主體210包括延伸穿過接地板216和桿218的中心開口222。桿218提供導管以向基座204的其餘部分提供例如背側氣體、流體、冷卻劑、功率等。
在一些實施例中,波紋管組件212設置在基座主體210周圍。例如,波紋管組件212可以圍繞桿218設置並且經設置通過腔室壁112的底板202。波紋管組件212可以包括連接到底板202的上凸緣224,以提供允許基座204的垂直部分同時防止CVD腔室101內的真空損失的撓性密封。升降組件(例如升降組件103)連接到波紋管組件212,並被配置為在處理位置(如圖1所示)和較低的轉移位置之間選擇性地升高或降低內部容積118、120中的基座204(未顯示)。
旋轉接頭230連接到基座204並被配置為便於旋轉基座204。旋轉接頭230通常包括圍繞轉子232設置的固定外殼226。轉子232連接到基座204,使得基座204與轉子232一起旋轉。轉子232可以使用任何合適的方式相對於固定外殼226旋轉。例如,一或更多個第一軸承234可以設置在轉子232和固定外殼226之間以促進它們之間的旋轉。在一些實施例中,升降組件103連接到固定外殼226並且被配置為相對於地板202升高或降低旋轉接頭230以升高或降低基座204。在一些實施例中,固定外殼226包括中心開口228。在一些實施例中,桿218至少部分地延伸通過中心開口228。
在一些實施例中,旋轉接頭230包括圍繞轉子232的下部設置的第二固定外殼236。在一些實施例中,第二固定外殼236連接到固定外殼226的下部。一或更多個第一軸承234可以設置在固定外殼226和轉子232之間、第二固定外殼236和轉子232之間,或兩者之間。
驅動組件238連接到旋轉接頭230並且配置成透過任何合適的裝置旋轉轉子232以旋轉基座204。例如,驅動組件238可以包括連接到一或更多個皮帶、滑輪、軌道或齒輪的馬達。在一些實施例中,驅動組件238配置成以約10轉/分鐘或更小的旋轉速度旋轉基座204。在一些實施例中,驅動組件238透過第二固定外殼236中的開口連接到轉子232。在一些實施例中,驅動組件238透過固定外殼226中的開口或固定外殼226和第二固定外殼236之間的間隙連接到轉子232。
冷卻劑接頭240連接到旋轉接頭230並與旋轉接頭230一起旋轉。冷卻劑接頭240包括與基座204的冷卻劑通道214流體連接的冷卻劑入口244入口。例如,冷卻劑管線248可以從冷卻劑入口244透過冷卻劑接頭240、透過轉子232和透過桿218延伸到冷卻劑通道214。冷卻劑供應242可連接到冷卻劑入口244以使冷卻劑(例如上述任何冷卻劑)流過冷卻劑通道214以控制基座204的溫度。冷卻劑返回管線(未示出)可以從冷卻劑通道214延伸回到冷卻劑接頭240。在一些實施例中,冷卻劑接頭240的上部設置在旋轉接頭230的第二固定外殼236的一部分內。在一些實施例中,一或更多個第二軸承246設置在冷卻劑接頭240和第二固定外殼236之間以促進它們之間的旋轉運動。
RF旋轉接合250耦合到冷卻劑接頭240並且被配置為將偏壓電源150耦合到基座204。在一些實施例中,RF旋轉接合250通常包括RF外殼254和設置在RF外殼254中的RF連接器252。在一些實施例中,RF連接器252包括上部256和下部258,使得下部258被配置為透過合適的裝置(例如透過設置在它們之間的一或更多個軸承)相對於上部256旋轉。在一些實施例中,上部256和下部258是單個部件。在一些實施例中,上部256和下部258包括便於在它們之間快速連接或斷開的特徵。在一些實施例中,RF彎頭連接器260在一端耦合到下部258並且在相對端耦合到偏壓電源。在一些實施例中,RF連接器252被配置為提供單通道RF連接。在一些實施例中,RF連接器252被配置為以約0.5MHz到約15MHz的頻率提供約0.8kW到約1.2kW的RF功率。
在一些實施例中,冷卻劑接頭240的下部延伸到RF外殼254中。在一些實施例中,RF旋轉接合250包括佈置在冷卻劑接頭240的下部周圍的絕緣轉接環264。在一些實施例中,RF旋轉接合250包括連接到絕緣轉接環264的安裝環262。RF連接器252可以安裝到安裝環262以將RF連接器252耦合到冷卻劑接頭240。
RF導管270從RF連接器252透過基座主體210的中心開口222延伸到基座204以向基座204提供RF偏壓功率。RF導管270與基座402一起旋轉。在一些實施例中,RF導管270從安裝環262延伸到介電板206中的單極電極208。在一些實施例中,RF導管270是延伸穿過冷卻劑接頭240和旋轉接頭230的金屬桿。在一些實施例中,金屬桿由黃銅製成。在一些實施例中,金屬桿是鍍銀的。在一些實施例中,RF導管270位於基板支撐件128的中心。在一些實施例中,冷卻劑管線248(和冷卻劑返回管線)設置在RF導管270的徑向外側。
在一些實施例中,絕緣管272設置在RF導管270周圍以使RF導管270絕緣。在一些實施例中,絕緣管272由聚合物材料製成,例如聚四氟乙烯(PTFE)。在一些實施例中,絕緣管272從安裝環262延伸到介電板206。
在一些實施例中,接地管274設置在絕緣管272的至少一部分周圍並且耦合到地以有利於基座主體210的接地。在一些實施例中,接地管274從RF連接器252延伸到基座主體210。在一些實施例中,接地管274包括管狀部分和從管狀部分徑向向外延伸的上凸緣。在一些實施例中,接地管274的上凸緣設置在基座主體210和轉子232之間。在一些實施例中,接地管274的上凸緣包括一或更多個對應於冷卻劑管線248(和冷卻劑返回管線)的開口。在一些實施例中,接地管274由鋁製成。在一些實施例中,接地管274鍍有鎳。
圖3描繪了根據本公開發明的至少一些實施例的基板支撐件128的基座204的截面視圖。在一些實施例中,基座204包括絕緣板302,絕緣板302設置在基座主體210的介電板206和接地板216之間,以使RF熱(RF hot)的介電板206與可以接地的接地板216絕緣。在一些實施例中,介電板206由陶瓷材料製成。在一些實施例中,介電板206由氮化鋁(AlN)製成。單極電極208可以包括板、網(mesh)等。由金屬製成的桿連接器304設置在RF導管270和單極電極208之間並且被配置為將RF導管270電耦合到單極電極208。在一些實施例中,桿連接器304具有凹槽312以容納RF導管270的上端。在一些實施例中,桿連接器304具有倒U形截面。在一些實施例中,由桿連接器304的凹槽312形成的壁設置在RF導管270和絕緣管272之間。
在一些實施例中,基座204包括上邊緣環308,上邊緣環308具有環形形狀並且設置在介電板206的外圍邊緣上。上邊緣環308被配置為圍繞基板115並幫助引導或引導接近基板115邊緣的電漿。上邊緣環308還可以透過在使用期間將介電板206與電漿屏蔽來幫助防止對介電板206的損壞。在一些實施例中,上邊緣環308由陶瓷材料製成,例如氧化鋁。
在一些實施例中,基座204包括具有環形形狀並設置在介電板206的外側壁的下邊緣環306。下邊緣環306被配置為在使用期間圍繞和屏蔽介電板206免受電漿影響。在一些實施例中,下邊緣環306由陶瓷材料製成,例如氧化鋁。在一些實施例中,下邊緣環306擱置在絕緣板302上,使得僅介電板206的支撐表面268暴露於電漿。
在一些實施例中,基座204包括一或更多個設置在其中的升降銷330,以選擇性地將基板115抬離或降低到基座204上。例如,一或更多個升降銷330延伸穿過基座主體210的接地板216和介電板206。在一些實施例中,一或更多個升降銷330包括較寬的上部332、較寬的下部336和窄的中央部分334。在一些實施例中,介電板206包括與一或更多個升降銷330的較寬上部332相對應的一或更多個凹槽328,使得當處於上部處理位置時,較寬上部332完全延伸到一或更多個凹槽328使得基板115直接擱置在支撐表面268上。當基座204移動到較低的轉移位置(如圖3所示)時,一或更多個升降銷330的較寬的下部336推壓CVD腔室101的底板202,從而將一個或多個提升銷330的較寬的上部332升高到支撐表面268上方。在一些實施例中,接地板216的下表面包括與較寬的下部336相對應的一或更多個第二凹槽324中的一個。在一些實施例中,較寬的上部332具有小於較寬的下部336的外徑。
圖4描繪了根據本公開發明的至少一些實施例的基板支撐件的截面示意視圖。在一些實施例中,如圖4所示,基座204包括具有雙極電極或一或更多個夾緊電極406的靜電夾盤,其設置在介電板206中,被配置為靜電夾緊基板115。圖4中未顯示介電板206的交叉影線以幫助觀察一或更多個夾緊電極406。一或更多個夾緊電極406耦合到DC電源410,該DC電源410被配置為向一或更多個夾緊電極406提供DC電源。在一些實施例中,介電板206由氧化鋁製成。
在一些實施例中,基座204包括設置在介電板206和接地板216之間的冷卻板412。冷卻板412可以由諸如鋁的金屬製成。在一些實施例中,接地板216包括在接地板216的外圍邊緣處從接地板216向上延伸以圍繞冷卻板412的外唇緣404。在一些實施例中,冷卻板412(而不是接地板216)包括用於使冷卻劑流過其中的複數個冷卻劑通道214。在一些實施例中,冷卻劑管線248可以從冷卻劑入口244延伸通過冷卻劑接頭240、通過轉子232、通過桿218、通過接地板216並進入冷卻劑通道214。在一些實施例中,冷卻劑管線248延伸穿過接地管274。冷卻劑返回管線(未示出)可以從冷卻劑通道214延伸回到冷卻劑接頭240。
在一些實施例中,RF旋轉接合250被配置為從偏壓電源150向基座204提供約0.5kW到約3kW的RF功率。在一些實施例中,RF旋轉接合250被配置為提供三個或更多通道。在一些實施例中,RF導管270包括具有中心開口448的金屬管。RF導管270耦合到偏壓電源150並且包括第一通道。在一些實施例中,一或更多根電線422從RF旋轉接合250延伸穿過金屬管的中心開口448到一或更多個夾緊電極406。一或更多根電線422可包括DC導管422A以向一或更多個夾緊電極406提供DC電源。DC導管422A可以包括對應於第二和第三通道的兩個導管。兩個DC導管422A可以是電線、電纜等。一或更多根電線422還可包括如下文更詳細討論的用於在一或更多個夾緊電極406處傳輸溫度讀數的光纖電纜422B。
在一些實施例中,RF旋轉接合250包括具有靜止部分444和旋轉部分442的RF連接器252,旋轉部分442被配置為與基座204和RF導管270一起旋轉。一或更多個第三軸承428可以設置在旋轉部分442和靜止部分444之間以促進它們之間的旋轉。在一些實施例中,偏壓電源150耦合到靜止部分444中的RF輸入452。在一些實施例中,一或更多個第三軸承428被配置成將來自RF輸入452的RF偏壓功率耦合到旋轉部分442而到耦合到旋轉部分442的RF導管270。
在一些實施例中,RF旋轉接合250包括淨化氣體入口416,該淨化氣體入口416流體地耦合到金屬管的中心開口448且配置成用淨化氣體淨化該中心開口448以防止濕氣或污染物在中心開口448中積聚。淨化氣體入口416可以耦合到淨化供應器420,淨化供應器420具有惰性氣體,例如氮氣、氬氣、氦氣等。
在一些實施例中,DC電源410可以耦合到RF旋轉接合250的靜止部分444中的DC電源輸入446。在一些實施例中,DC電源輸入446、淨化氣體入口416和RF輸入452沿同一水平板圍繞RF旋轉接合250佈置。在一些實施例中,DC電源輸入446、淨化氣體入口416和RF輸入452沿著約90度的間隔圍繞RF旋轉接合250佈置。在一些實施例中,RF旋轉接合250包括光纖旋轉接合438。在這樣的實施例中,來自一或更多個夾緊電極406的光訊號經由一或更多個電線422的光纜422B傳輸到光纖旋轉接合438,然後傳輸到被配置為處理光學訊號以決定一個或多個夾緊電極406的溫度讀數的接收器450。
在一些實施例中,基板支撐件128被配置為向支撐表面268提供背側氣體。在一些實施例中,旋轉接頭230包括背側氣體入口414。在一些實施例中,基板支撐件128包括從背側氣體入口414延伸到基座204的支撐表面268或上表面的背側氣體管線434。背側氣體入口414耦合到背側氣體供應430。在一些實施例中,背側氣體供應430包含惰性氣體,例如氦氣、氮氣、氬氣等。
在一些實施例中,背側氣體入口414設置在旋轉接頭230的固定外殼226的外側壁上。然而,背側氣體入口414可以設置在旋轉接頭230的任何其他合適的表面上。在一些實施例中,背側氣體管線434從固定外殼226徑向向內延伸到轉子232中的位置,然後從轉子232中的位置向上延伸到轉子232的頂表面,而通過接地管274,通過桿218,通過接地板216,進入設置在冷卻板412中的背側氣體通道432。背側氣體通道432以任何合適的圖案基本水平地延伸通過冷卻板412。背側氣體管線434包括複數個第二背側氣體通道418,其從背側氣體通道432向上延伸到基座204的支撐表面268。在一些實施例中,背側氣體通道432垂直設置在冷卻劑通道214上方。
圖5描繪了根據本公開發明的至少一些實施例的基板支撐件128的基座204的截面視圖。在一些實施例中,絕緣板502設置在冷卻板412和接地板216之間以使接地板216與冷卻板412絕緣,其中冷卻板412透過RF導管270耦合到偏壓電源150。在一些實施例中,接合層504設置在介電板206和冷卻板412之間。在一些實施例中,密封件518圍繞接合層504而設置在介電板206和冷卻板412之間。
在一些實施例中,RF導管270包括從金屬管徑向向外延伸的上凸緣526。在一些實施例中,上凸緣526設置在冷卻板412中。在一些實施例中,絕緣塞516設置在冷卻板412中RF導管270的垂直上方。在一些實施例中,DC導管422A從RF導管270的中心開口448透過絕緣塞516延伸到一或更多個夾緊電極406。在一些實施例中,多孔塞510圍繞一或更多個升降銷330而設置在絕緣板502和冷卻板412中,以減少或防止用於一或更多個升降銷330的基座204中的開口中的電弧。
在一些實施例中,基座204包括具有環形形狀並設置在介電板206的外圍邊緣上的上邊緣環508。在一些實施例中,上邊緣環508的功能與上面關於圖3討論的上邊緣環308相似並且由相似的材料製成。在一些實施例中,上邊緣環508包括在其底表面上的突起532。
在一些實施例中,基座204包括具有環形形狀並且圍繞介電板206的外側壁設置的下邊緣環506。下邊緣環506被配置為圍繞介電板206並且可以有利地減少介電板206和接地板216的外唇緣404之間產生電弧的機會。在一些實施例中,下邊緣環506由與下邊緣環306類似的材料製成。在一些實施例中,下邊緣環506的上表面可以包括與上邊緣環508的突起532配合的凹槽。
雖然前述內容針對本公開發明的實施例,但是可以設計本公開發明的其他和進一步的實施例而不背離其基本範圍。
100:裝置
101:CVD腔室
102:腔室主體
118、120:內部容積
128:基板支撐件
115:基板
126:支撐軸
103:升降組件
108:氣體分配組件
104:腔室蓋
140:氣體入口通道
119:氣流控制器
142:噴頭
148:環形基板
146:面板
144:擋板
125:射頻(RF)電源
124:RF匹配網路
150:偏壓電源
152:RF匹配網路
112:腔室壁
134:系統控制器
138:記憶體
268:支撐表面
204:基座
210:基座主體
206:介電板
208:單極電極
218:桿
216:接地板
214:冷卻劑通道
222:中心開口
212:波紋管組件
202:底板
224:上凸緣
230:旋轉接頭
232:轉子
226:固定外殼
234:第一軸承
236:第二固定外殼
238:驅動組件
204:基座
240:冷卻劑接頭
248:冷卻劑管線
242:冷卻劑供應
244:冷卻劑入口
250:RF旋轉接合
254:RF外殼
252:RF連接器
256:上部
258:下部
264:絕緣轉接環
262:安裝環
270:RF導管
210:基座主體
272:絕緣管
274:接地管
302:絕緣板
304:桿連接器
312:凹槽
308:上邊緣環
306:下邊緣環
330:升降銷
332:上部
336:下部
334:中央部分
406:夾緊電極
412:冷卻板
404:外唇緣
448:中心開口
422:電線
422A:DC導管
422B:光纖電纜
444:靜止部分
442:旋轉部分
428:第三軸承
416:淨化氣體入口
420:淨化供應器
410:DC電源
446:DC電源輸入
452:RF輸入
438:光纖旋轉接合
450:接收器
414:背側氣體入口
434:背側氣體管線
430:背側氣體供應
432:背側氣體通道
418:第二背側氣體通道
502:絕緣板
518:密封件
504:接合層
526:上凸緣
516:絕緣塞
510:多孔塞
508:上邊緣環
532:突起
506:下邊緣環
508:上邊緣環
可以透過參考在附圖中描繪的本公開發明的說明性實施例來理解上面簡要概括並在下面更詳細討論的本公開發明的實施例。然而,附圖僅圖示了本公開發明的典型實施例並且因此不應被視為對範圍的限制,因為本公開發明可以承認其他同樣有效的實施例。
圖1描繪了根據本公開發明的至少一些實施例的用於沉積膜的裝置的截面示意視圖。
圖2描繪了根據本公開發明的至少一些實施例的基板支撐件的截面示意視圖。
圖3描繪了根據本公開發明的至少一些實施例的基板支撐件的基座的截面視圖。
圖4描繪了根據本公開發明的至少一些實施例的基板支撐件的截面示意視圖。
圖5描繪了根據本公開發明的至少一些實施例的基板支撐件的基座的截面視圖。
為了便於理解,在可能的情況下,使用相同的元件符號來表示附圖共有的相同元件。這些圖不是按比例繪製的,並且為了清楚起見可以進行簡化。一個實施例的元件和特徵可以有益地結合在其他實施例中而無需進一步敘述。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
100:裝置
101:CVD腔室
102:腔室主體
118、120:內部容積
128:基板支撐件
115:基板
126:支撐軸
103:升降組件
108:氣體分配組件
104:腔室蓋
140:氣體入口通道
119:氣流控制器
142:噴頭
148:環形基板
146:面板
144:擋板
125:射頻(RF)電源
124:RF匹配網路
150:偏壓電源
152:RF匹配網路
112:腔室壁
134:系統控制器
138:記憶體
Claims (20)
- 一種用於化學氣相沉積(CVD)腔室的基板支撐件,包括: 一基座,該基座支撐一基板,其中該基座包括耦合到一基座主體的一介電板; 一旋轉接頭,該旋轉接頭連接到該基座,其中該旋轉接頭包括圍繞一轉子而設置的一固定外殼; 一驅動組件,該驅動組件連接到該旋轉接頭並被配置為旋轉該轉子以旋轉該基座; 一冷卻劑接頭,該冷卻劑接頭連接到該旋轉接頭並且具有一冷卻劑入口,該冷卻劑入口透過一冷卻劑管線流體地連接到設置在該基座中的冷卻劑通道; 一RF旋轉接合,該RF旋轉接合耦合到該冷卻劑接頭並具有一RF連接器,該RF連接器配置為將該基座耦合到一RF偏壓電源;和 一RF導管,該RF導管從該RF連接器延伸通過該基座主體的一中心開口到該基座以向該基座提供一RF偏壓。
- 根據請求項1所述的基板支撐件,其中該介電板包括一單極電極並且該RF導管延伸至該單極電極。
- 根據請求項1所述的基板支撐件,其中,該RF導管是一金屬桿,該金屬桿延伸穿過該冷卻劑接頭和該旋轉接頭。
- 根據請求項1所述的基板支撐件,還包括設置在該RF導管周圍的一絕緣管。
- 根據請求項1所述的基板支撐件,其中該介電板包括設置在該介電板中的一或更多個夾緊電極。
- 根據請求項5所述的基板支撐件,其中,該RF導管包括具有一中心開口的一金屬管,並且還包括兩個DC導管,該兩個DC導管從該RF旋轉接合延伸穿過該金屬管的該中心開口到該一或更多個夾緊電極,以向該一或更多個夾緊電極提供DC電源。
- 根據請求項1所述的基板支撐件,其中,該旋轉接頭包括一背側氣體入口,並且該基板支撐件包括從該背側氣體入口延伸到該基座的一上表面的一背側氣體管線。
- 根據請求項1至7中任一項所述的基板支撐件,還包括設置在該基座主體周圍的一波紋管組件和耦合到該波紋管組件並且被配置為在一處理腔室內選擇性地升高或降低該基座的一升降組件。
- 根據請求項1至7中任一項所述的基板支撐件,還包括一或更多個升降銷,該升降銷延伸穿過該基座並且被配置為從該基座的一上表面升高該基板。
- 一種用於化學氣相沉積(CVD)腔室的基板支撐件,包括: 一基座,該基座支撐一基板,其中該基座包括耦合到一基座主體的一介電板,其中該基座包括一單極電極或雙極電極; 一旋轉接頭,該旋轉接頭連接到該基座,其中該旋轉接頭包括圍繞一轉子設置的一固定外殼; 一驅動組件,該驅動組件連接到該旋轉接頭並被配置為旋轉該轉子以旋轉該基座; 一冷卻劑接頭,該冷卻劑接頭連接到該旋轉接頭並且具有一冷卻劑入口,該冷卻劑入口透過一冷卻劑管線流體地連接到設置在該基座中的冷卻劑通道; 一RF旋轉接合,該RF旋轉接合連接到該冷卻劑接頭並具有配置為將該基座耦合到一RF偏壓電源的一RF連接器; 一RF導管,該RF導管從該RF連接器延伸通過該基座主體的一中心開口到該基座; 一波紋管組件,該波紋管組件設置在該基座主體周圍;和 一升降組件,該升降組件連接到該波紋管組件並配置為選擇性地升高或降低該基座。
- 根據請求項10所述的基板支撐件,還包括設置在該RF導管周圍的一絕緣管和設置在該絕緣管周圍並且從該RF旋轉接合朝向該基座延伸的一接地管。
- 根據請求項10所述的基板支撐件,其中,該RF導管包括具有一中心開口的一金屬管,並且該RF旋轉接合包括一淨化氣體入口,該淨化氣體入口流體地耦合到該金屬管的該中心開口並且被配置為用一淨化氣體淨化該中心開口。
- 根據請求項10所述的基板支撐件,其中,該RF旋轉接合包括一光纖旋轉接合。
- 根據請求項10至13中任一項所述的基板支撐件,其中,該基座還包括設置在該介電板和該基座主體之間的一絕緣板。
- 一種化學氣相沉積(CVD)處理腔室,包括: 一腔室主體,該腔室主體在其中限定一內部容積; 一噴頭,該噴頭設置在該內部容積中,以用於將一或更多種處理氣體供應到該內部容積中; 一基板支撐件,該基板支撐件設置在與該噴頭相對的該內部容積中,其中該基板支撐件包括: 一基座,該基座支撐一基板,其中該基座包括耦合到一基座主體的一介電板; 一旋轉接頭,該旋轉接頭連接到該基座,其中該旋轉接頭包括圍繞一轉子設置的一固定外殼; 一驅動組件,該驅動組件連接到該旋轉接頭並被配置為旋轉該轉子以旋轉該基座; 一冷卻劑接頭,該冷卻劑接頭連接到該旋轉接頭並且具有一冷卻劑入口,該冷卻劑入口透過一冷卻劑管線流體地連接到設置在該基座中的冷卻劑通道; 一RF旋轉接合,該RF旋轉接合連接到該冷卻劑接頭並具有一RF連接器;和 一RF導管,該RF導管從該RF連接器延伸通過該基座主體的一中心開口到該基座;和 一RF偏壓電源,該RF偏壓電源耦合到該RF導管並被配置為透過該RF導管向設置在該介電板中的一電極提供RF功率。
- 根據請求項15所述的CVD處理腔室,其中該電極包括設置在該介電板中的一或更多個夾緊電極,並且還包括耦合到該一或更多個夾緊電極以向該一或更多個夾緊電極提供DC電源的一DC電源。
- 根據請求項15所述的CVD處理腔室,其中,該冷卻劑管線設置在該RF導管的徑向外側。
- 根據請求項15至17中任一項所述的CVD處理腔室,還包括一升降組件,該升降組件耦合到該基座並且被配置為在該內部空間內選擇性地升高或降低該基座。
- 根據請求項18所述的CVD處理腔室,還包括一或更多個延伸穿過該基座的升降銷,其中該一或更多個升降銷包括一較寬的上部、一較寬的下部和一窄的中央部分。
- 一種成對CVD處理腔室,包括兩個根據請求項15所述的CVD處理腔室,其具有用於將一或更多種處理氣體供應到該兩個CVD處理腔室中的每一者中的一單個氣流控制器。
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US17/221,215 US20220319896A1 (en) | 2021-04-02 | 2021-04-02 | Rotating biasable pedestal and electrostatic chuck in semiconductor process chamber |
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JP (1) | JP2024513389A (zh) |
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US5822171A (en) * | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
US5968379A (en) * | 1995-07-14 | 1999-10-19 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability and related methods |
US6081414A (en) * | 1998-05-01 | 2000-06-27 | Applied Materials, Inc. | Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system |
US6080272A (en) * | 1998-05-08 | 2000-06-27 | Micron Technology, Inc. | Method and apparatus for plasma etching a wafer |
US6689221B2 (en) * | 2000-12-04 | 2004-02-10 | Applied Materials, Inc. | Cooling gas delivery system for a rotatable semiconductor substrate support assembly |
US20040027781A1 (en) * | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
WO2004082007A1 (ja) * | 2003-03-12 | 2004-09-23 | Tokyo Electron Limited | 半導体処理用の基板保持構造及びプラズマ処理装置 |
US20080008842A1 (en) * | 2006-07-07 | 2008-01-10 | Applied Materials, Inc. | Method for plasma processing |
US8206552B2 (en) * | 2008-06-25 | 2012-06-26 | Applied Materials, Inc. | RF power delivery system in a semiconductor apparatus |
US8884524B2 (en) * | 2011-11-22 | 2014-11-11 | Applied Materials, Inc. | Apparatus and methods for improving reliability of RF grounding |
US20130287529A1 (en) * | 2012-04-27 | 2013-10-31 | Applied Materials, Inc. | Method and apparatus for independent wafer handling |
US20140263275A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Rotation enabled multifunctional heater-chiller pedestal |
CN106158717B (zh) * | 2015-03-31 | 2019-08-23 | 北京北方华创微电子装备有限公司 | 机械卡盘及半导体加工设备 |
TWI725067B (zh) * | 2015-10-28 | 2021-04-21 | 美商應用材料股份有限公司 | 可旋轉靜電夾盤 |
US10522377B2 (en) * | 2016-07-01 | 2019-12-31 | Lam Research Corporation | System and method for substrate support feed-forward temperature control based on RF power |
WO2018194807A1 (en) * | 2017-04-21 | 2018-10-25 | Applied Materials, Inc. | Improved electrode assembly |
US11149345B2 (en) * | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
US10704693B2 (en) * | 2018-03-30 | 2020-07-07 | Varian Semiconductor Equipment Associates, Inc. | Cryogenic ferrofluid sealed rotary union |
US11417504B2 (en) * | 2018-10-25 | 2022-08-16 | Tokyo Electron Limited | Stage device and processing apparatus |
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