TW202240888A - 氮化鎵高電子移動率電晶體 - Google Patents

氮化鎵高電子移動率電晶體 Download PDF

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TW202240888A
TW202240888A TW110112790A TW110112790A TW202240888A TW 202240888 A TW202240888 A TW 202240888A TW 110112790 A TW110112790 A TW 110112790A TW 110112790 A TW110112790 A TW 110112790A TW 202240888 A TW202240888 A TW 202240888A
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gallium nitride
gate
layer
disposed
drain
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劉莒光
楊弘堃
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杰力科技股份有限公司
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Abstract

一種氮化鎵高電子移動率電晶體，包括：基板、成核層、緩衝層、通道層、阻障層、閘極、源極、汲極、以及第一p型氮化鎵島。成核層設置於基板上。緩衝層設置於成核層上。通道層設置於緩衝層上。阻障層設置於通道層上。閘極設置於阻障層上。源極設置於閘極的第一側的阻障層上。汲極設置於閘極的第二側的阻障層上。閘極的第二側是相對於閘極的第一側。多個第一p型氮化鎵島分別設置於汲極的第一側與閘極的第二側之間，其中所述多個第一p型氮化鎵島是浮置的。

Description

氮化鎵高電子移動率電晶體
本發明是有關於一種功率電晶體，且特別是有關於一種氮化鎵高電子移動率電晶體(high electron mobility transistor, HEMT)。
氮化鎵高電子移動率電晶體是利用氮化鋁鎵(AlGaN)與氮化鎵(GaN)的異質結構，於接面處會產生具有高平面電荷密度和高電子遷移率的二維電子氣(two dimensional electron gas, 2DEG)，因此適於高功率、高頻率和高溫度運作。然而，氮化鎵高電子移動率電晶體在瞬關的過程中，因表面缺陷容易使電子聚集於氮化鋁鎵阻障層表面，對通道電子(2DEG)產生排斥，導致2DEG濃度下降並降低最大汲極電流，讓電晶體的開關效能下降或是失效，進而使可靠度降低。
本發明提供一種氮化鎵高電子移動率電晶體，可以增加電晶體開關的可靠度。
本發明的氮化鎵高電子移動率電晶體包括：基板、成核層、緩衝層、通道層、阻障層、閘極、源極、汲極以及第一p型氮化鎵島。成核層設置於基板上。緩衝層設置於成核層上。通道層設置於緩衝層上。阻障層設置於通道層上。閘極設置於阻障層上。源極設置於閘極的第一側的阻障層上。汲極設置於閘極的第二側的阻障層上。閘極的第二側是相對於閘極的第一側。多個第一p型氮化鎵島分別設置於汲極的第一側與閘極的第二側之間，其中多個第一p型氮化鎵島是浮置的。
在本發明的一實施例中，上述的各個第一p型氮化鎵島與閘極的間距大於各個第一p型氮化鎵島與汲極的間距。
在本發明的一實施例中，上述的汲極具有一延伸方向，且多個第一p型氮化鎵島沿延伸方向排列。
在本發明的一實施例中，上述沿延伸方向排列的同一列的第一p型氮化鎵島之間的間距是相同的。
在本發明的一實施例中，上述還可包括多個第二p型氮化鎵島，分別設置於汲極的第二側的阻障層上，汲極的第二側是相對於汲極的第一側，且所述多個第二p型氮化鎵島是浮置的。
在本發明的一實施例中，上述的閘極包括閘極金屬層與介於阻障層與閘極金屬層之間的p型氮化鎵層。
本發明的另一種氮化鎵高電子移動率電晶體包括：基板、成核層、緩衝層、通道層、阻障層、閘極、源極、至少一第一p型氮化鎵島、汲極以及介電層。成核層設置於基板上。緩衝層設置於成核層上。通道層設置於緩衝層上。阻障層設置於通道層上。閘極設置於阻障層上。源極設置於閘極的第一側的阻障層上。至少一第一p型氮化鎵島設置於閘極的第二側的阻障層上，其中閘極的第二側是相對於閘極的第一側。汲極設置於閘極的第二側的阻障層上並覆蓋所述第一p型氮化鎵島。介電層介於汲極與第一p型氮化鎵島之間，以使第一p型氮化鎵島是浮置的。
在本發明的另一實施例中，上述至少一第一p型氮化鎵島為多個第一p型氮化鎵島，且多個第一p型氮化鎵島沿汲極的延伸方向排列。
在本發明的另一實施例中，上述介電層延伸設置於汲極與阻障層之間，且介電層具有多個接觸窗開口，以使汲極通過多個接觸窗開口與阻障層接觸。
在本發明的另一實施例中，上述閘極包括閘極金屬層與介於阻障層與閘極金屬層之間的p型氮化鎵層。
基於上述，本發明藉由第一p型氮化鎵島的設置，可以產生如同浮接場環(floating ring)的作用，能形成電洞以復合阻障層130上的多餘電子，避免二維電子氣(2DEG)濃度受到影響，進而提供優異可靠度的氮化鎵高電子移動率電晶體。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
圖1是依照本發明的第一實施例的一種氮化鎵高電子移動率電晶體的上視示意圖。圖2是圖1的剖線A-A’的剖面示意圖。
首先，請同時參照圖1與圖2，氮化鎵高電子移動率電晶體10包括：基板100、成核層105、緩衝層110、通道層120、阻障層130、閘極140、源極150、汲極160以及數個第一p型氮化鎵島170。成核層105設置於基板100上。緩衝層110設置於成核層105上。通道層120設置於緩衝層110上。阻障層130設置於通道層120上。閘極140設置於阻障層130上。源極150設置於閘極140的第一側140a的阻障層130上。汲極160設置於閘極140的第二側140b的阻障層130上。第一p型氮化鎵島170分別設置於汲極160的第一側160a與閘極140的第二側140b之間，其中數個第一p型氮化鎵島170是浮置的。汲極160具有延伸方向，且第一p型氮化鎵島170沿汲極160的延伸方向排列。
各個第一p型氮化鎵島170與閘極140有一間距D1，各個第一p型氮化鎵島170與汲極160有一間距D2，第一p型氮化鎵島170彼此之間在汲極160的延伸方向上也有一間距D3。第一p型氮化鎵島170的位置並沒有特別限定，較佳是靠近汲極160，也就是各個第一p型氮化鎵島170與閘極140的間距D1大於各個第一p型氮化鎵島170與汲極160的間距D2。汲極160的延伸方向排列的同一列的第一p型氮化鎵島170之間的間距D3並沒有特別限定。
汲極160的第二側160b是相對於汲極的第一側160a，在汲極160的第二側160b也可以設置多個第二p型氮化鎵島180，且第二p型氮化鎵島180是浮置的，如同第一p型氮化鎵島170的設置方式。
請繼續參照圖2，氮化鎵高電子移動率電晶體10的基板100可以包括藍寶石(Sapphire)、碳化矽(SiC)、氧化鋅(ZnO)、矽(Si)、氧化鎵(Ga 2O 3)等材料；緩衝層110及通道層120的材料可以包括未摻雜的氮化鎵(GaN)；而阻障層130的材料可以包括未摻雜的氮化鋁鎵（Al xGa 1-xN，x=0.2~1），但本發明不限於此。緩衝層110的配置可以解決基板100與通道層120之間若具有晶格不匹配的問題。
源極150與汲極160的材料可以使用適宜的金屬材料，例如金、鈦、氮化鈦、鋁或前述金屬的合金等。閘極140可以包括閘極金屬層142與介於阻障層130與閘極金屬層142之間的p型氮化鎵層144，其中閘極金屬層142的材料例如鎳、鉑、氮化鉭、氮化鈦、鎢或前述金屬的合金，閘極金屬層142也可以是其他適宜的導電材料。p型氮化鎵層144與第一p型氮化鎵島170的材料例如是摻雜有摻質的氮化鎵，較佳為摻雜鎂的氮化鎵，但本發明不限於此。第一p型氮化鎵島170並未與閘極140或汲極160電性相接，而是電性獨立於閘極140或汲極160，因此可以形成如浮接場環(floating ring)的效果，其中第一P型氮化鎵島170之電位介於閘極140與汲極160之間。在元件導通時，第一P型氮化鎵島170注入電洞至阻障層130。
第一實施例的氮化鎵高電子移動率電晶體10的製作例如是在基板100上依序形成緩衝層110、通道層120以及阻障層130後，在阻障層130上同時形成p型氮化鎵層144與第一p型氮化鎵島170，再形成源極150、閘極金屬層142與汲極160。上述各層的形成方式例如是化學氣相沈積法、物理氣相沈積法或其他適當的形成方法，再搭配微影蝕刻製程製作出各個電極與圖案。
本實施例的氮化鎵高電子移動率電晶體10因為汲極160與閘極140之間設置有第一p型氮化鎵島170，產生如同浮接場環(floating ring)的作用，能形成電洞以復合阻障層130上的多餘電子，避免二維電子氣(2DEG)濃度受到影響，進而提供優異可靠度的氮化鎵高電子移動率電晶體。
第二p型氮化鎵島180具有與第一p型氮化鎵島170相同的功能，當本實施例的汲極160的第二側160b也設置有閘極(未繪示)時，第二p型氮化鎵島180也可以復合氮化鎵高電子移動率電晶體10開關時出現在阻障層130表面的多餘電子，進而提供優異可靠度的氮化鎵高電子移動率電晶體。
圖3是依照本發明的第二實施例的一種氮化鎵高電子移動率電晶體的上視示意圖，其中使用與第一實施例相同的元件符號來表示相同或近似的構件，且相同或近似的構件內容也可參照第一實施例的相關說明，不再贅述。
請參照圖3，氮化鎵高電子移動率電晶體20在汲極160的延伸方向上設置四個第一p型氮化鎵島170，使彼此間的間距D3比第一實施例的間距要小，且兩兩第一p型氮化鎵島170的間距D3可為相同，也可為不同，較佳為設置相同的間距D3，進而增加復合阻障層130表面多餘電子的能力。
圖4是依照本發明的第三實施例的一種氮化鎵高電子移動率電晶體的上視示意圖，其中使用與第一實施例相同的元件符號來表示相同或近似的構件，且相同或近似的構件內容也可參照第一實施例的相關說明，不再贅述。
請參照圖4，本實施例與第一實施例的差異在於汲極160的第一側160a與閘極140的第二側140b之間有兩列的第一p型氮化鎵島170，其中間距D1是指第一p型氮化鎵島170與閘極140最接近的距離，所以本實施例的第一p型氮化鎵島170與閘極140的間距D1比第一實施例的間距要小，第一p型氮化鎵島170之間的間距D3也比第一實施例的間距要小，進而使復合阻障層130表面多餘電子的能力增強。其中多個第一p型氮化鎵島170的間距D3可為相同，也可為不同，較佳為設置相同間距D3。
圖5是依照本發明的第四實施例的一種氮化鎵高電子移動率電晶體的上視示意圖，圖6是圖5的剖線I-I’的剖面示意圖，圖7是圖5的剖線II-II’的剖面示意圖。
請同時參照圖5至圖7，氮化鎵高電子移動率電晶體40包括：基板200、成核層205、緩衝層210、通道層220、阻障層230、閘極240、源極250、汲極260、第一p型氮化鎵島270以及介電層280。成核層205設置於基板200上。緩衝層210設置於成核層205上。通道層220設置於緩衝層210上。阻障層230設置於通道層220上。閘極240設置於阻障層230上。源極250設置於閘極240的第一側240a的阻障層230上。第一p型氮化鎵島270設置於閘極240的第二側240b的阻障層230上，其中閘極240的第二側240b是相對於閘極240的第一側240a。也就是說，第一p型氮化鎵島270是設置於汲極260的第一側260a與第二側260b之間。第一p型氮化鎵島270的數目並沒有特別限定，可以為單一個或多個，且第一p型氮化鎵島270沿汲極260的延伸方向排列。汲極260設置於閘極240的第二側240b的阻障層230上並覆蓋第一p型氮化鎵島270。
介電層280則介於汲極260與第一p型氮化鎵島270之間，以使第一p型氮化鎵島270是浮置的，其中介電層280可延伸設置於汲極260與阻障層230之間，且介電層280具有多個接觸窗開口280a，以使汲極260通過接觸窗開口280a與阻障層230接觸。介電層280的材料並沒有特別限定，可使用一般常用的介電材料。第一p型氮化鎵島270並未與閘極240或汲極260電性相接，而是電性獨立於閘極240或汲極260，因此浮置的第一p型氮化鎵島270會產生如同浮接場環(floating ring)的作用，能形成電洞以復合阻障層230上的多餘電子，避免二維電子氣(2DEG)濃度受到影響，進而提供優異可靠度的氮化鎵高電子移動率電晶體。
第四實施例的氮化鎵高電子移動率電晶體40的製作例如是在基板200上依序形成成核層205、緩衝層210、通道層220以及阻障層230後，在阻障層230上同時形成p型氮化鎵層244與第一p型氮化鎵島270，然後沉積一層介電層280覆蓋上述結構與膜層。接著，利用微影蝕刻等製成，在預定形成閘極、源極與汲極的位置的介電層280內形成多個接觸窗口280a，再於接觸窗口280a內填滿金屬或合金，以形成源極250、閘極金屬層242與汲極260。與第一p型氮化鎵島270。關於基板200、緩衝層210、通道層220、阻障層230、閘極240、源極250、第一p型氮化鎵島270與汲極260的材料與形成方式類似上述的第一實施例，於此不再贅述。介電層280的形成方式例如是化學氣相沈積法或旋轉塗佈技術等方法。
圖8是依照本發明的第五實施例的一種氮化鎵高電子移動率電晶體的上視示意圖，其中使用與第四實施例相同的元件符號來表示相同或近似的構件，且相同或近似的構件內容也可參照第四實施例的相關說明，不再贅述。
請參照圖8，本實施例與第四實施例的差異在於第一p型氮化鎵島270的數量增加，進而產生如同浮接場環的作用，能復合氮化鎵高電子移動率電晶體50表面的多餘電子，避免二維電子氣濃度受到影響，進而提供優異可靠度的氮化鎵高電子移動率電晶體50。
綜上所述，本發明藉由設置在閘極與汲極之間的p型氮化鎵島或者設置於汲極下方的p型氮化鎵島，復合氮化鎵高電子移動率電晶體表面的多餘電子，以避免二維電子氣(2DEG)濃度受到影響，進而改善氮化鎵高電子移動率電晶體的可靠度。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10、20、30、40、50:氮化鎵高電子移動率電晶體 100、200:基板 105、205:成核層 110、210:緩衝層 120、220:通道層 130、230:阻障層 140、240:閘極 140a、240a:閘極的第一側 140b、240b:閘極的第二側 142、242:閘極金屬層 144、244:p型氮化鎵層 150、250:源極 160、260:汲極 160a、260a:汲極的第一側 160b、260b:汲極的第二側 170、270:第一p型氮化鎵島 180:第二p型氮化鎵島 280:介電層 280a:接觸窗開口 D1:第一p型氮化鎵島與閘極間距 D2:第一p型氮化鎵島與汲極間距 D3:第一p型氮化鎵島之間的間距
圖1是依照本發明的第一實施例的一種氮化鎵高電子移動率電晶體的上視示意圖。 圖2是圖1的剖線A-A’的剖面示意圖。 圖3是依照本發明的第二實施例的一種氮化鎵高電子移動率電晶體的上視示意圖。 圖4是依照本發明的第三實施例的一種氮化鎵高電子移動率電晶體的上視示意圖。 圖5是依照本發明的第四實施例的一種氮化鎵高電子移動率電晶體的上視示意圖。 圖6是圖5的剖線I-I’的剖面示意圖。 圖7是圖5的剖線II-II’的剖面示意圖。 圖8是依照本發明的第五實施例的一種氮化鎵高電子移動率電晶體的上視示意圖。
10:氮化鎵高電子移動率電晶體
100:基板
105:成核層
110:緩衝層
120:通道層
130:阻障層
140:閘極
142:閘極金屬層
144:p型氮化鎵層
150:源極
160:汲極
170:第一p型氮化鎵島
D1:第一p型氮化鎵島與閘極間距
D2:第一p型氮化鎵島與汲極間距

Claims (10)

  1. 一種氮化鎵高電子移動率電晶體，包括： 基板； 成核層，設置於所述基板上； 緩衝層，設置於所述成核層上； 通道層，設置於所述緩衝層上； 阻障層，設置於所述通道層上； 閘極，設置於所述阻障層上； 源極，設置於所述閘極的第一側的所述阻障層上； 汲極，設置於所述閘極的第二側的所述阻障層上，所述閘極的所述第二側是相對於所述閘極的所述第一側；以及 多數個第一p型氮化鎵島，分別設置於所述汲極的第一側與所述閘極的所述第二側之間，其中所述多數個第一p型氮化鎵島是浮置的。
  2. 如請求項1所述的氮化鎵高電子移動率電晶體，其中各個所述第一p型氮化鎵島與所述閘極的間距大於各個所述第一p型氮化鎵島與所述汲極的間距。
  3. 如請求項1所述的氮化鎵高電子移動率電晶體，其中所述汲極具有一延伸方向，且所述多數個第一p型氮化鎵島沿所述延伸方向排列。
  4. 如請求項1所述的氮化鎵高電子移動率電晶體，其中沿所述延伸方向排列的同一列的所述第一p型氮化鎵島之間的間距是相同的。
  5. 如請求項1所述的氮化鎵高電子移動率電晶體，更包括多數個第二p型氮化鎵島，分別設置於所述汲極的第二側的所述阻障層上，所述汲極的所述第二側是相對於所述汲極的所述第一側，且所述多數個第二p型氮化鎵島是浮置的。
  6. 如請求項1所述的氮化鎵高電子移動率電晶體，其中所述閘極包括閘極金屬層與介於所述阻障層與所述閘極金屬層之間的p型氮化鎵層。
  7. 一種氮化鎵高電子移動率電晶體，包括： 基板； 成核層，設置於所述基板上； 緩衝層，設置於所述成核層上； 通道層，設置於所述緩衝層上； 阻障層，設置於所述通道層上； 閘極，設置於所述阻障層上； 源極，設置於所述閘極的第一側的所述阻障層上； 至少一第一p型氮化鎵島，設置於所述閘極的第二側的所述阻障層上，其中所述閘極的所述第二側是相對於所述閘極的所述第一側； 汲極，設置於所述閘極的所述第二側的所述阻障層上並覆蓋所述至少一第一p型氮化鎵島；以及 介電層，介於所述汲極與所述至少一第一p型氮化鎵島之間，以使所述至少一第一p型氮化鎵島是浮置的。
  8. 如請求項7所述的氮化鎵高電子移動率電晶體，其中所述至少一第一p型氮化鎵島為多數個第一p型氮化鎵島，且所述多數個第一p型氮化鎵島沿所述汲極的延伸方向排列。
  9. 如請求項7所述的氮化鎵高電子移動率電晶體，其中所述介電層延伸設置於所述汲極與所述阻障層之間，且所述介電層具有多數個接觸窗開口，以使所述汲極通過所述多數個接觸窗開口與所述阻障層接觸。
  10. 如請求項7所述的氮化鎵高電子移動率電晶體，其中所述閘極包括閘極金屬層與介於所述阻障層與所述閘極金屬層之間的p型氮化鎵層。
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