TW202234470A - 搬運裝置 - Google Patents
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- TW202234470A TW202234470A TW110146675A TW110146675A TW202234470A TW 202234470 A TW202234470 A TW 202234470A TW 110146675 A TW110146675 A TW 110146675A TW 110146675 A TW110146675 A TW 110146675A TW 202234470 A TW202234470 A TW 202234470A
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Abstract
本發明之課題為:藉由連結真空搬運模組,而在真空搬運系統增加處理模組的最大載置數時,抑制伴隨真空搬運模組的連結而造成佔用面積增大,並在搬運時使基板的缺口方向對齊。
依本發明之搬運裝置,具備:第1真空搬運模組;第1搬運機器人;第2真空搬運模組;第2搬運機器人;筒狀連結模組;晶圓支持部,以可旋轉方式安裝在前述筒狀連結模組,而支持前述晶圓;及至少3個環支持構件,從前述晶圓支持部朝向外方延伸,而支持前述至少1個環。
Description
本發明係關於搬運裝置。
專利文獻1係揭露處理基板的基板處理裝置或處理方法。作為裝置構成的一例,揭露使載置製程模組的2個傳送模組連結而進行基板處理的構成。又,在專利文獻1,揭露設置旋轉模組(旋轉機構),必要時使基板旋轉的技術。
[先前技術文獻]
[專利文獻]
專利文獻1:美國專利第10431480號說明書
[發明概要]
[發明所欲解決的問題]
本發明的技術提供一種搬運裝置,可在藉由連結真空搬運模組而在真空搬運系統增加處理模組的最大載置數時,抑制伴隨真空搬運模組的連結而使佔用面積增大,並且在搬運時使基板的缺口方向對齊。
[用於解決課題的手段]
本發明的一態樣具備:第1真空搬運模組;構成為配置在前述第1真空搬運模組內,並且同時或分別搬運晶圓及至少1個環,前述至少1個環具有比前述晶圓的直徑大的內徑;第2真空搬運模組;第2搬運機器人,構成為配置在前述第2真空搬運模組內,並且同時或分別搬運前述晶圓及前述至少1個環;筒狀連結模組,配置在前述第1真空搬運模組與前述第2真空搬運模組之間,前述第1真空搬運模組、前述第2真空搬運模組及前述筒狀連結模組沿著第1方向排列,前述筒狀連結模組在前述第1方向具有第1長度,前述第1長度比前述晶圓的直徑小;晶圓支持部,構成為以可旋轉方式安裝在前述筒狀連結模組,而支持前述晶圓;及至少3個環支持構件,構成為從前述晶圓支持部朝向外方延伸,而支持前述至少1個環。
[發明效果]
若依照本發明,可在藉由連結真空搬運模組而在真空搬運系統增加處理模組的最大載置數時,抑制伴隨真空搬運模組的連結而使佔用面積增大,並且在搬運時使基板的缺口方向對齊。
在半導體裝置的製造過程,使收納半導體晶圓(以下僅稱為「晶圓」。)的處理模組之內部成為減壓(真空)狀態,對於該晶圓進行各種處理工程。此等處理工程在具備多個處理模組的基板處理裝置(以下也稱為晶圓處理裝置)進行。
該晶圓處理裝置例如具有:大氣部,具備在大氣環境下對於晶圓進行期望的處理之大氣模組;及減壓部(真空部),具備在減壓(真空)環境下處理晶圓的減壓(真空)模組。大氣部及減壓部(真空部)經由構成為將內部在大氣環境與減壓(真空)環境之間可切換的裝載鎖定模組而一體連接。
另外,在設計晶圓處理裝置時,如專利文獻1所揭露,就使用者的需求或晶圓處理的效率化之觀點而言,有時會要求載置更多處理模組。
然而,鑑於晶圓處理裝置的佔用面積削減或搬運臂長度的限制、晶圓處理裝置的生產量提升等各種課題,針對增加處理模組時的適當裝置設計有進一步討論的空間。例如,對於真空搬運系統載置更多處理模組時,提出設置使既有的真空搬運模組連結之用的匯流排模組,然而,此時伴隨載置匯流排模組而導致佔用面積增加、或伴隨在匯流排模組中收授晶圓而導致缺口方向偏移等課題會產生。
本發明的技術係鑑於上述情形而完成者,提供一種搬運裝置,構成為具備的匯流排模組可抑制佔用面積增加,並且在搬運時使晶圓的缺口方向對齊。以下,針對作為本實施形態的搬運裝置之晶圓處理裝置,參考圖示予以說明。尚且,在本說明書及圖示,對於具有實質上相同的功能構成之要素,附加同一符號而省略重複說明。
<晶圓處理裝置的構成>
首先,說明本實施形態的晶圓處理裝置。圖1為顯示本實施形態的晶圓處理裝置1之構成的概略之平面圖。在本實施形態,晶圓處理裝置1說明具備對於作為基板的晶圓W進行蝕刻處理、成膜處理或擴散處理等電漿處理之用的處理模組之情況。尚且,本發明的晶圓處理裝置1之模組構成不限於此,可配合晶圓處理的目的而任意選擇。
如圖1所示,晶圓處理裝置1具有大氣部10與減壓部(真空部)11經由裝載鎖定模組20而一體連接的構成。大氣部10具備在大氣環境下處理及搬運晶圓W的大氣模組。減壓部(真空部)11具備在減壓(真空)環境下處理及搬運晶圓W的減壓模組(真空模組)。
裝載鎖定模組20沿著後述的載入模組30及後述的擬合模組60之寬度方向(X軸方向)具有多個、在本實施形態例如為3個晶圓搬運室21a、21b、21c。
作為基板搬運室的晶圓搬運室21a、21b、21c(以下,有時僅統稱為「晶圓搬運室21」。)設置成經由晶圓搬運口22、23連通大氣部10的後述之載入模組30的內部空間、與減壓部11的後述之第1傳送模組50a的內部空間。尚且,晶圓搬運口22、23構成為分別藉由閘閥24、25而自由開閉。
晶圓搬運室21構成為暫時保持晶圓W。又,晶圓搬運室21構成為可將內部在大氣環境與減壓環境(真空狀態)之間切換。也就是說,裝載鎖定模組20構成為可在大氣環境的大氣部10、與減壓環境的減壓部11之間適當收授晶圓W。
大氣部10具有:載入模組30,具備後述的晶圓搬運機構40;及裝載埠32,載置可保管多個晶圓W的環箍31。尚且,可對於載入模組30,鄰接設置調節晶圓W的水平方向之方向的轉向模組(未圖示)或儲存多個晶圓W的儲存模組(未圖示)等。
載入模組30由內部為矩形的框體所構成,框體的內部維持在大氣環境下。在載入模組30的Y軸負方向側之構成長邊的一側面,排列配置多個、例如5個裝載埠32。在載入模組30的構成Y軸正方向側的長邊之其他側面,排列配置裝載鎖定模組20的晶圓搬運室21a、21b、21c。
在載入模組30的內部,設置搬運晶圓W的晶圓搬運機構40。晶圓搬運機構40具有:搬運臂41,保持移動晶圓W;旋轉台42,以可旋轉方式支持搬運臂41;及旋轉載置台43,載置旋轉台42。又,在載入模組30的內部,設置朝向載入模組30的長邊方向(X軸方向)延伸的導軌44。旋轉載置台43設置在導軌44上,晶圓搬運機構40構成為可沿著導軌44移動。
減壓部11具有:2個傳送模組(真空搬運模組)50a、50b,在內部搬運晶圓W(以下,也記載為第1傳送模組(第1真空搬運模組)50a及第2傳送模組(第2真空搬運模組)50b);匯流排模組(筒狀連結模組)55,相互連接2個傳送模組50a、50b彼此;擬合模組60,相互連接裝載鎖定模組20與第1傳送模組50a;及處理模組70,處理從傳送模組50a、50b搬運的晶圓W。傳送模組50a、50b、擬合模組60及處理模組70的內部構成為分別可維持在減壓(真空)環境下。尚且,在本實施形態,對於1個傳送模組50a(或者50b),連接多個、例如6個處理模組70。尚且,處理模組70的數量或配置不限定於本實施形態,可任意設定。
作為真空搬運模組的第1傳送模組50a如上述經由擬合模組60而連接到裝載鎖定模組20。第1傳送模組50a及第2傳送模組50b例如將搬入到裝載鎖定模組20的晶圓搬運室21a 之晶圓W搬運到1個或多個處理模組70予以處理之後,經由裝載鎖定模組20的晶圓搬運室21c而搬運到大氣部10。
在第1傳送模組50a的內部,設置作為搬運晶圓W的第1搬運機構之第1晶圓搬運機構(第1搬運機器人)80a。第1晶圓搬運機構80a具有:搬運臂81a,保持晶圓W而予以移動;旋轉台82a,以可旋轉方式支持搬運臂81a;及旋轉載置台83a,載置旋轉台82a。旋轉載置台83a固定到第1傳送模組50a的中央部分。在一實施形態,第1搬運機器人80a構成為配置在第1真空搬運模組50a內,並且同時或分別搬運晶圓W及至少1個環ER1。環ER1具有比晶圓W的直徑大的內徑。在一實施形態,至少1個環可具有多個環ER1、ER2。各環ER1、ER2具有比晶圓W的直徑大的內徑。此時,第1搬運機器人80a可同時搬運多個環ER1、ER2,也可分別搬運。在一實施形態,多個環ER1、ER2為在電漿處理模組70內一起使用的邊緣環。多個邊緣環ER1、ER2配置成在電漿處理模組70內包圍晶圓W。在一實施形態,多個邊緣環ER1、ER2具有第1邊緣環ER1及第2邊緣環ER2,第2邊緣環ER2的外徑比第1邊緣環ER1的外徑大。在一實施形態,第1邊緣環ER1由Si材料或SiC材料所製作,第2邊緣環ER2由石英所製作。尚且,第1邊緣環ER1及第2邊緣環ER2可由相同的材料所製作。例如,第1邊緣環ER1及第2邊緣環ER2可由石英所製作。
在第2傳送模組50b的內部,設置第2晶圓搬運機構(第2搬運機器人)80b作為搬運晶圓W的第2搬運機構。第2晶圓搬運機構80b具有與上述第1晶圓搬運機構80a同樣的功能構成,設置搬運臂81b、旋轉台82b、旋轉載置台83b之機構。在一實施形態,第2搬運機器人80b構成為配置在第2真空搬運模組50b內,可同時或分別搬運晶圓W及至少1個環ER1。至少1個環具有多個環ER1、ER2時,第2搬運機器人80b可同時搬運多個環ER1、ER2,也可分別搬運。
處理模組70對於晶圓W例如進行蝕刻處理、成膜處理或擴散處理等電漿處理。在處理模組70,可任意選擇模組以配合晶圓處理的目的而進行處理。又,處理模組70經由在各傳送模組50a、50b的側壁面所形成的晶圓搬運口51而與各傳送模組50a、50b連通,晶圓搬運口51構成為使用閘閥71而自由開閉。
在以上的晶圓處理裝置1,如圖1所示設置控制部90。控制部90例如為具備CPU或記憶體等的電腦,並且具有程式儲存部(未圖示)。在程式儲存部,儲存控制晶圓處理裝置1的晶圓W之搬運或處理之用的程式。尚且,上述程式可為記錄在電腦可讀取的記憶媒體H的程式,也可為從該記憶媒體H安裝在控制部90的程式。
<各模組的構成>
本實施形態的晶圓處理裝置1如以上所述構成。接下來,說明各模組的詳細構成。圖2為示意顯示裝載鎖定模組20、擬合模組60、第1傳送模組50a、第2傳送模組50b、匯流排模組55之構成的概略之縱剖面圖。
裝載鎖定模組20具有沿著擬合模組60的寬方向(X軸方向)排列配置的3個晶圓搬運室21a、21b、21c。在3個晶圓搬運室21的各者,形成有在與載入模組30之間收授晶圓W的晶圓搬運口22、及在與第1傳送模組50a之間收授晶圓W的晶圓搬運口23。換言之,在裝載鎖定模組20的Y軸負方向側及正方向側之側壁,分別形成有3個晶圓搬運口22、23。
裝載鎖定模組20的晶圓搬運室21經由閘閥24、閘閥25而連接到載入模組30及第1傳送模組50a。藉由該閘閥24、25,而兼顧晶圓搬運室21與載入模組30、或者傳送模組50a、50b之間的氣密性之確保及彼此的連通。
在晶圓搬運室21,如圖2所示,設置貯藏庫26,用以暫時保存在載入模組30與傳送模組50a、50b之間搬運的晶圓W。
又,對於裝載鎖定模組20,如圖2所示,連接對於晶圓搬運室21的內部供供氣體的供氣部27、排出氣體的排氣部28。裝載鎖定模組20構成為藉由此等供氣部27及排氣部28,而使晶圓搬運室21的內部可在大氣環境與減壓環境之間切換。
在第1傳送模組50a的擬合模組60被連接的Y軸負方向側之一端部,形成有開口部52,用以在與擬合模組60之間搬運晶圓W。又,對於第1傳送模組50a的Y軸正方向側之另一端部,經由匯流排模組55而連接第2傳送模組50b。換言之,對於第2傳送模組50b的Y軸負方向側之一端部經由匯流排模組55而連接第1傳送模組50a,第2傳送模組50b的Y軸正方向側之另一端部藉由作為板狀構件的端板53而閉塞。
如此一來,在傳送模組50a、50b、匯流排模組55、擬合模組60之間,並未如圖示設置板狀構件或閘閥。也就是說,傳送模組50a、50b、匯流排模組55、擬合模組60劃定內部空間連通、並且藉由第1晶圓搬運機構80a或第2晶圓搬運機構80b而搬運晶圓W的一體之搬運空間S。
在構成傳送模組50a、50b的長邊之X軸負方向側及正方向側的側面,如上述,形成有與處理模組70連通的多個晶圓搬運口51。晶圓搬運口51構成為使用閘閥71而自由開閉。
又,對於晶圓搬運口51的上方之傳送模組50a、50b的頂面,連接氣體供給部54,用以對於搬運空間S供給惰性氣體(例如N2氣體)。該氣體供給部54以遮斷晶圓搬運口51的方式,也就是形成氣體簾幕的方式,對於搬運空間S供給惰性氣體,而在閘閥71開放時,避免粒子等從處理模組70飛散到傳送模組50a、50b。
又,氣體供給部54對於搬運空間S的內部供給惰性氣體,以消除搬運空間S的內部之氣流的滯留部分,而可藉由連接到擬合模組60的排氣機構(未圖示)使搬運空間S的內部適當排氣。
<匯流排模組的構成>
如上述,匯流排模組55為彼此連接第1傳送模組50a與第2傳送模組50b者。匯流排模組55的內部係與第1傳送模組50a及第2傳送模組50b的內部在空間上連通,並且在搬運晶圓W時處在減壓環境下。圖3為示意顯示匯流排模組55之構成的概略之立體圖。尚且,圖3顯示藉由晶圓搬運機構80a(搬運臂81a)而將晶圓W搬運到匯流排模組55內的狀態。
如圖1、2所示,裝載鎖定模組20、擬合模組60、第1傳送模組50a、匯流排模組55、第2傳送模組50b從Y軸負方向側依照此順序排列連接。
又,如圖3所示,匯流排模組55構成為筒型形狀並且具有:第1開口55a,形成在與第1傳送模組50a連接的(Y軸負方向側)一側面;及第2開口55b,形成在與第2傳送模組50b連接的(Y軸正方向側)另一側面。
在本實施形態的匯流排模組55,第1開口55a與第2開口55b皆具有足夠大小而可在匯流排模組55與各傳送模組50a、50b之間適當搬運晶圓W。
又,匯流排模組55的Y軸方向之縱深尺寸H1設計成比晶圓W的直徑(基板尺寸)小。然而,匯流排模組55的縱深尺寸H1設計成具有足夠尺寸而可設置構成後述的收授部56之旋轉機構56a、56b。又,該匯流排模組55的縱深尺寸H1可基於在匯流排模組55的附近彼此鄰接的處理模組70彼此的間隙(間隔)而設計。例如,從裝置全體的佔用面積之觀點,鄰接的處理模組70彼此的間隔設為10mm左右,匯流排模組55的縱深尺寸H1基於該數值而設計。因此,筒狀連結模組55配置在第1真空搬運模組50a與第2真空搬運模組50b之間。第1真空搬運模組50a、第2真空搬運模組50b及筒狀連結模組55沿著第1方向Y排列。筒狀連結模組55在第1方向Y具有第1長度H1。第1長度H1比晶圓W的直徑小。
如圖1所示,在匯流排模組55,設置收授部56用以在第1傳送模組50a與第2傳送模組50b之間收授晶圓W。如圖1所示,本實施形態的收授部56具備2個旋轉機構(晶圓支持部)56a、56b,此等旋轉機構56a、56b沿著匯流排模組55的寬方向(X軸方向)排列配置。
圖4為顯示旋轉機構56a、56b之構成的一例之概略說明圖。在此,以旋轉機構56a為例圖示,但旋轉機構56b也具有同樣的構成。如圖4所示,旋轉機構56a由以下元件所構成:軸構件100,內含驅動軸;基板支持部(晶圓台)105,在軸構件100的上端具有基板支持面(晶圓支持面)105a;及邊緣環支持部108,具有在基板支持部105的外周朝向外方延伸的至少3個以上的棒狀之保持構件(環支持構件)107。在圖4的構成,3根保持構件107a、107b、107c在基板支持部105的外周以120°間隔設置。
基板支持部105構成為分別連接到軸構件100內含的驅動軸(未圖示),並且伴隨驅動軸的驅動而自由旋轉。基板支持部105較佳為設計成收納在匯流排模組55內。又,邊緣環支持部108可為不旋轉的構成,或者可構成為與基板支持部105同樣連接到驅動軸而自由旋轉。作為構成的一例,此等基板支持部105與邊緣環支持部108可一體旋轉,或者可彼此獨立旋轉。尚且,此等基板支持部105或邊緣環支持部108可構成為從軸構件100自由移除。藉由移除基板支持部105或邊緣環支持部108而提升裝置的搬運或梱包時的效率。
在基板支持部105的基板支持面105a,例如可藉由O環等卡止構件而使晶圓W固定予以載置。該基板支持面105a可為直徑比晶圓W小的圓板狀之構件,該尺寸較佳為鑑於在搬運臂81a或81b之間收授晶圓W,而設計成比搬運臂81a、81b的貨叉寬度小。因此,晶圓支持部56a、56b構成為以可旋轉方式安裝在筒狀連結模組55,而支持晶圓W。晶圓支持部56a包含晶圓台105及軸構件100。晶圓台105具有晶圓支持面105a。晶圓支持面105a具有比第1長度H1小的直徑。軸構件100從晶圓台105朝向下方延伸。晶圓支持部56b也具有與晶圓支持部56a同樣的構成。
在保持構件107的外方前端,形成有具有朝向上方突出的形狀之邊緣環支持面109。基板支持面105a與邊緣環支持面109可為相同的高度位準,也可為不同的高度位準。因此,至少3個環支持構件107a、107b、107c構成為從晶圓支持部56a朝向外方延伸,而一起支持至少1個環ER1。至少1個環具有多個環ER1、ER2時,至少3個環支持構件107a、107b、107c構成為一起支持多個環ER1、ER2。至少3個環支持構件107a、107b、107c具有第1環支持構件107a及第2環支持構件107b。在一實施形態,第1環支持構件107a延伸到第1真空搬運模組50a的內部為止,第2環支持構件107b延伸到第2真空搬運模組50b的內部為止。至少3個環支持構件107a、107b、107c可旋轉。在一實施形態,各環支持構件107a、107b、107c包含棒狀部分及突出部分。棒狀部分在一端部安裝在軸構件100。突出部分從棒狀部分的另一端部朝向上方突出,在上端部具有環支持面109。又,邊緣環支持面109較佳為在旋轉機構56a的徑方向具有一定程度的寬度。原因在於作為邊緣環ER使直徑不同的2種環(例如,焦點環FR及覆蓋環CR)在邊緣環支持面109支持旋轉。
圖5為顯示在旋轉機構56a、56b於邊緣環支持面109載置直徑不同的2種邊緣環ER1、ER2的狀態之概略說明圖。若依照本實施形態的構成,則可如圖5所示將直徑不同的2種邊緣環ER1、ER2在邊緣環支持面109同時支持,予以保持或旋轉。
尚且,焦點環FR係指在晶圓W的周圍進行對位之例如矽製的構件,覆蓋環CR係指覆蓋焦點環FR的外側之例如石英製的構件。邊緣環ER係指對於晶圓W進行電漿處理時,配置成包圍該晶圓W的周圍之環狀構件,並且在此為上述焦點環FR及覆蓋環CR的總稱。
如上述,基板支持部105的尺寸較佳為設計成比匯流排模組55的縱深尺寸H1小。另外,包含邊緣環支持部108的保持構件107(107a~107c)之全體的尺寸可設計成比匯流排模組55的縱深尺寸H1大,此時,保持構件107的前端可延伸到各傳送模組50a、50b的內部為止。
<晶圓的收授方法>
接下來,說明在本實施形態的晶圓處理裝置1,經由匯流排模組55而收授晶圓W的方法之一例。例如,針對同一晶圓W,在第1傳送模組50a的側面設置的處理模組70進行第1基板處理之後,在設置在第2傳送模組50b的側面之其他處理模組70進行第2基板處理時,必須將該晶圓W從第1傳送模組50a收授到第2傳送模組50。
首先,在設置在第1傳送模組50a的側面之處理模組70進行第1基板處理之後,藉由第1晶圓搬運機構80a(搬運臂81a)將晶圓W從處理模組70取下,在匯流排模組55內的旋轉機構56a、56b之任一基板支持部105載置晶圓W。
然後,藉由在基板支持部105載置晶圓W的狀態下,軸構件100內含的驅動軸之驅動,而使基板支持部105及晶圓W僅一體旋轉既定的角度。旋轉結束後,藉由第2晶圓搬運機構80b(搬運臂81b)而從基板支持部105取下晶圓W。晶圓W直接藉由第2晶圓搬運機構80b而搬運到設置在第2傳送模組50b的側面之處理模組70內。然後,在設置在第2傳送模組50b的側面之處理模組70進行第2基板處理。因此,控制部90控制第1搬運機器人80a而將晶圓W載置在晶圓支持部56a上。接下來,控制部90控制晶圓支持部56a而使晶圓支持部56a上的晶圓W僅旋轉既定的角度。然後,控制第2搬運機器人80b而將晶圓支持部56a上的晶圓W搬運到第2真空搬運模組50b內。
在半導體裝置的製造過程搬運多片晶圓W時,從製程特性或量產性的觀點來看,較佳為以處理模組70內晶圓W的方向一致面向相同方向的方式搬運。因此,不論是在第1晶圓搬運機構80a(搬運臂81a)的搬運時、及第2晶圓搬運機構80b(搬運臂81b)的搬運時,較佳皆為以在搬運目的地的處理模組70晶圓W一致面向相同方向的方式控制搬運。
從這種觀點來看,要求藉由在晶圓W於既定的處所形成有缺口(切口),並且在基板處理時將晶圓W搬運到處理模組70時,將晶圓W的缺口方向對齊,而控制成在處理模組70內使晶圓W一致朝向相同方向。本實施形態的晶圓處理裝置1具有第1傳送模組50a及第2傳送模組50b經由匯流排模組55而連接的構成。就針對晶圓W的基板處理之內容而言,必須將同一晶圓W朝向多個處理模組70搬運,此時,要求經由匯流排模組55予以搬運。
若依照本實施形態的構成,則藉由在晶圓W搬運時經由的匯流排模組55設置旋轉機構56a、56b,而可在從第1晶圓搬運機構80a朝向第2晶圓搬運機構80b收授晶圓W時使晶圓W僅旋轉既定的角度予以收授。藉此,能夠以在搬運目的地的處理模組70內使晶圓W的缺口方向一致朝向相同的方向之方式搬運晶圓W,而謀求提升基板處理的均勻程度或生產量。
尚且,在此說明晶圓W的收授方法,但本發明的適用範圍不限定於此。也就是說,如同本實施形態的晶圓處理裝置1,可構成為在處理模組70中對於晶圓W進行電漿處理時,在真空搬運部可搬運邊緣環ER。如上述,旋轉機構56a、56b具備支持邊緣環ER之用的邊緣環支持部108。因此,與晶圓W搬運時同樣,在搬運邊緣環ER時也可使該邊緣環ER旋轉而以期望的方向搬運處理模組70。因此,控制部90控制第1搬運機器人80a而將至少1個環ER1、ER2載置在至少3個環支持構件107a、107b、107c上。然後,控制部90控制第2搬運機器人80b而將至少3個環支持構件107a、107b、107c上的至少1個環ER1、ER2搬運到第2真空搬運模組50b內。
若依照本實施形態的晶圓處理裝置1,則配合各種要求對於1個真空搬運系統載置更多處理模組70時,為了使既存的真空搬運模組(傳送模組50a、50b)連結而使用縱深尺寸極小(具體而言為晶圓W的直徑以下)的匯流排模組55。藉此,增加處理模組70的最大載置數時,可抑制佔用面積增加。
又,若依照本實施形態的晶圓處理裝置1,則為了增加處理模組70的最大載置數,將第1傳送模組50a及第2傳送模組50b經由匯流排模組55而連接的構成中,在收授晶圓W的匯流排模組55設置旋轉機構56a、56b。藉此,例如將同一晶圓W從第1晶圓搬運機構80a收授到第2晶圓搬運機構80b時,可使晶圓W僅旋轉期望的角度予以收授。也就是說,能夠以在搬運目的地的處理模組70內晶圓W的缺口方向一致面向相同的方向之方式搬運晶圓W,而謀求提升生產量等。
本次揭露的實施形態應視為在所有方面皆為例示,而非限制於此。上述的實施形態在不脫離附加的專利申請範圍及其主旨的前提,能夠以各種形態省略、置換、變更。
例如,作為上述實施形態的晶圓處理裝置1,舉例以圖示說明擁有2個傳送模組50a、50b與連接該等傳送模組的匯流排模組55之構成,但裝置構成不限定於此。也就是說,可採用將3個以上的傳送模組50彼此連接到多個匯流排模組55,並且將其終端部藉由端板53閉塞的構成。
1:晶圓處理裝置
10:大氣部
11:減壓部(真空部)
20:裝載鎖定模組
21a:晶圓搬運室
21b:晶圓搬運室
21c:晶圓搬運室
22:晶圓搬運口
23:晶圓搬運口
24:閘閥
25:閘閥
30:載入模組
31:環箍
32:裝載埠
40:晶圓搬運機構
41:搬運臂
42:旋轉台
43:旋轉載置台
44:導軌
50a:第1傳送模組(第1真空搬運模組)
50b:第2傳送模組(第2真空搬運模組)
51:晶圓搬運口
55:匯流排模組
56:收授部
56a:旋轉機構
56b:旋轉機構
60:擬合模組
70:處理模組
71:閘閥
80a:第1晶圓搬運機構(第1搬運機器人)
80b:第2晶圓搬運機構(第2搬運機器人)
81a:搬運臂
81b:搬運臂
82a:旋轉台
82b:旋轉台
83a:旋轉載置台
83b:旋轉載置台
90:控制部
105:基板支持部
108:邊緣環支持部
W:晶圓
H1:匯流排模組55在Y方向之長度
圖1為顯示本實施形態的晶圓處理裝置之構成的概略之平面圖。
圖2為示意顯示本實施形態的模組之構成的概略之縱剖面圖。
圖3為示意顯示本實施形態的匯流排模組之構成的概略之立體圖。
圖4為顯示旋轉機構之構成的一例之概略說明圖。
圖5為顯示在旋轉機構於邊緣環支持面載置直徑不同的2種邊緣環的狀態之概略說明圖。
1:晶圓處理裝置
10:大氣部
11:減壓部(真空部)
20:裝載鎖定模組
21a:晶圓搬運室
21b:晶圓搬運室
21c:晶圓搬運室
22:晶圓搬運口
23:晶圓搬運口
24:閘閥
25:閘閥
30:載入模組
31:環箍
32:裝載埠
40:晶圓搬運機構
41:搬運臂
42:旋轉台
43:旋轉載置台
44:導軌
50a:第1傳送模組(第1真空搬運模組)
50b:第2傳送模組(第2真空搬運模組)
51:晶圓搬運口
55:匯流排模組
56:收授部
56a:旋轉機構
56b:旋轉機構
60:擬合模組
70:處理模組
71:閘閥
80a:第1晶圓搬運機構(第1搬運機器人)
80b:第2晶圓搬運機構(第2搬運機器人)
81a:搬運臂
81b:搬運臂
82a:旋轉台
82b:旋轉台
83a:旋轉載置台
83b:旋轉載置台
90:控制部
W:晶圓
H1:匯流排模組55在Y方向之長度
Claims (10)
- 一種搬運裝置, 具備: 第1真空搬運模組; 第1搬運機器人,構成為配置在該第1真空搬運模組內,並且同時或分別搬運晶圓及至少1個環,該至少1個環具有比該晶圓的直徑大的內徑; 第2真空搬運模組; 第2搬運機器人,構成為配置在該第2真空搬運模組內,並且同時或分別搬運該晶圓及該至少1個環; 筒狀連結模組,配置在該第1真空搬運模組與該第2真空搬運模組之間,該第1真空搬運模組、該第2真空搬運模組及該筒狀連結模組沿著第1方向排列,該筒狀連結模組在該第1方向具有第1長度,該第1長度比該晶圓的直徑小; 晶圓支持部,構成為以可旋轉方式安裝在該筒狀連結模組,而支持該晶圓;及 至少3個環支持構件,構成為從該晶圓支持部朝向外方延伸,而支持該至少1個環。
- 如請求項1的搬運裝置,其中, 該晶圓支持部包含具有晶圓支持面的晶圓台,該晶圓支持面具有比該第1長度小的直徑。
- 如請求項1或2的充搬運裝置,其中, 該至少3個環支持構件具有第1環支持構件及第2環支持構件,該第1環支持構件延伸到該第1真空搬運模組的內部為止,該第2環支持構件延伸到該第2真空搬運模組的內部為止。
- 如請求項1至3中任一項的搬運裝置,其中, 該至少3個環支持構件可旋轉。
- 如請求項2的搬運裝置,其中 該晶圓支持部更包含從該晶圓台朝向下方延伸的軸構件; 該環支持構件包含棒狀部分及突出部分;該棒狀部分在一端部安裝在該軸構件;該突出部分從該棒狀部分的另一端部朝向上方突出,在上端部具有環支持面。
- 如請求項5的搬運裝置,其中, 該環支持面位在與該晶圓支持面相同的高度。
- 如請求項5的搬運裝置,其中, 該環支持面位在與該晶圓支持面不同的高度。
- 如請求項1至7中任一項的搬運裝置,其中, 該至少3個環支持構件包含以該軸構件為中心並以120°間隔配置的3個環支持構件。
- 如請求項1至8中任一項的搬運裝置,更包含控制部, 該控制部: 控制該第1搬運機器人,而將該晶圓載置於該晶圓支持部上, 控制該晶圓支持部,而將該晶圓支持部上的該晶圓旋轉既定的角度, 控制該第2搬運機器人,而將該晶圓支持部上的該晶圓搬運到該第2真空搬運模組內。
- 如請求項9的搬運裝置,其中, 該控制部: 控制該第1搬運機器人,而將該至少1個環載置於該至少3個環支持構件上, 控制該第2搬運機器人,而將該至少3個環支持構件上的該至少1個環搬運到該第2真空搬運模組內。
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