TW202233779A - 一體型切晶黏晶用片及半導體裝置之製造方法 - Google Patents

一體型切晶黏晶用片及半導體裝置之製造方法 Download PDF

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TW202233779A
TW202233779A TW110147714A TW110147714A TW202233779A TW 202233779 A TW202233779 A TW 202233779A TW 110147714 A TW110147714 A TW 110147714A TW 110147714 A TW110147714 A TW 110147714A TW 202233779 A TW202233779 A TW 202233779A
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polysiloxane
dicing
group
bonded
bonding
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TW110147714A
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English (en)
Chinese (zh)
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戶田能乃
北浦英二
須藤学
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日商陶氏東麗股份有限公司
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Publication of TW202233779A publication Critical patent/TW202233779A/zh

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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
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    • C09J183/10—Block or graft copolymers containing polysiloxane sequences
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    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00873—Multistep processes for the separation of wafers into individual elements characterised by special arrangements of the devices, allowing an easier separation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00904—Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/0025—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001 - B81C99/002
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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    • H10W72/00—Interconnections or connectors in packages
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/032—Gluing
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
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    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
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    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
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    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
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    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
TW110147714A 2020-12-25 2021-12-20 一體型切晶黏晶用片及半導體裝置之製造方法 TW202233779A (zh)

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JP2020216518 2020-12-25
JPJP2020-216518 2020-12-25

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US (1) US20240087941A1 (https=)
JP (1) JPWO2022138341A1 (https=)
KR (1) KR20230125247A (https=)
CN (1) CN116601252A (https=)
TW (1) TW202233779A (https=)
WO (1) WO2022138341A1 (https=)

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CN115229887B (zh) * 2022-07-25 2024-07-16 东华大学 一种管道类支架的热固化切割处理装置及其使用方法
CN120380086A (zh) * 2022-12-23 2025-07-25 陶氏东丽株式会社 热熔性固化性有机硅组合物、使用该组合物的层叠体以及半导体装置的制造方法

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JP4536367B2 (ja) 2003-12-24 2010-09-01 東レ・ダウコーニング株式会社 ダイシングダイボンディング用シート及びその製造方法
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KR102952088B1 (ko) * 2019-03-29 2026-04-15 다우 도레이 캄파니 리미티드 경화성 실리콘 조성물, 그의 경화물 및 그의 제조 방법
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CN116601252A (zh) 2023-08-15
US20240087941A1 (en) 2024-03-14

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