WO2022138341A1 - 一体型ダイシングダイボンディング用シートおよび半導体装置の製造方法 - Google Patents

一体型ダイシングダイボンディング用シートおよび半導体装置の製造方法 Download PDF

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Publication number
WO2022138341A1
WO2022138341A1 PCT/JP2021/046121 JP2021046121W WO2022138341A1 WO 2022138341 A1 WO2022138341 A1 WO 2022138341A1 JP 2021046121 W JP2021046121 W JP 2021046121W WO 2022138341 A1 WO2022138341 A1 WO 2022138341A1
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Prior art keywords
silicone
group
adhesive sheet
sheet
bonded
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Ceased
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PCT/JP2021/046121
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English (en)
French (fr)
Japanese (ja)
Inventor
能乃 戸田
英二 北浦
学 須藤
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Dow Toray Co Ltd
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Dow Toray Co Ltd
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Priority to CN202180080411.4A priority Critical patent/CN116601252A/zh
Priority to US18/268,220 priority patent/US20240087941A1/en
Priority to KR1020237024860A priority patent/KR20230125247A/ko
Priority to JP2022572202A priority patent/JPWO2022138341A1/ja
Publication of WO2022138341A1 publication Critical patent/WO2022138341A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
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    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/10—Block or graft copolymers containing polysiloxane sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00873—Multistep processes for the separation of wafers into individual elements characterised by special arrangements of the devices, allowing an easier separation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00904—Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/0025—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001 - B81C99/002
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
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    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
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    • H10W42/00—Arrangements for protection of devices
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    • H10W72/013—Manufacture or treatment of die-attach connectors
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    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/032—Gluing
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H10W72/01336—Manufacture or treatment of die-attach connectors using blanket deposition in solid form, e.g. by using a powder or by laminating a foil
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
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    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • An integrated dicing die bonding sheet capable of permanently adhering a diced semiconductor wafer to a mounting portion by post-cure through the adhesive surface of the silicone adhesive sheet exposed after removal, and a semiconductor using the same.
  • the present invention relates to a method for manufacturing an apparatus (particularly including a MEMS device).
  • a semiconductor device is obtained through a step of dividing into IC chips having individual electronic circuits, a step of fixing the IC chip to a die pad (die bonding), and a step of optionally sealing the chip with a resin.
  • the step of fixing the IC chip obtained by cutting the semiconductor wafer to the die pad the chip is fixed to the die pad (mount portion) via an adhesive.
  • the adhesive When the adhesive is liquid, the adhesive is dropped and applied to the surface of the chip mounting portion or the chip itself, but it is difficult to accurately control the amount of the adhesive by dropping the liquid adhesive. If the chip is small, the adhesive may squeeze out of the chip, and if the chip is large, the adhesive may run short. Therefore, use a dry-type sheet-like adhesive with a uniform thickness in advance. A method of fixing the chip to the die pad has been implemented.
  • Patent Document 4 the applicant proposes a dicing die bonding sheet having a structure in which a base film which is a dicing tape and a silicone adhesive layer provided by an addition reaction are bonded via a peelable base layer. is doing.
  • the sheet is not provided with a peelable base layer, the dicing tape and the silicone adhesive layer are firmly adhered to each other, and both cannot be peeled off after dicing. Since the underlayer impairs the stress relaxation characteristics of the silicone adhesive layer, if the underlayer must be used, chip skipping, chipping, cracks, etc. during dicing are likely to occur, and small semiconductor devices including MEMS devices are manufactured. It cannot be fully adapted for use in, and its production efficiency and yield cannot be improved.
  • Patent Documents 5 and 6 propose a dicing die bond sheet having a structure in which a silicone adhesive layer cured by an addition reaction is bonded to a different type of silicone adhesive layer, but conversely, the silicone adhesive layer is It can be peeled off only in combination with a specific silicone adhesive layer, and when acrylic PSA, which is commonly used for dicing tape, is attached, the two are firmly integrated into a sheet for storage stability and integrated dicing die bonding. The required function cannot be realized.
  • the silicone adhesive layer does not realize sufficient stress relaxation characteristics for semiconductor chips and the like during dicing while maintaining its thickness, and in particular, the silicone adhesive is applied during curing for the purpose of permanent adhesion. There is a problem that the thickness of the layer is easily changed, it cannot be sufficiently adapted for use in the manufacture of small semiconductor devices including MEMS devices, and its production efficiency and yield cannot be improved.
  • the semiconductor on the die pad is generated by the vibration generated during the die bonding process after the semiconductor chip provided with the adhesive sheet layer is placed on the die pad. Chip misalignment may occur.
  • a MEMS device since a large number of semiconductor chips are sequentially arranged in the same package, it is difficult to completely suppress such vibration, and confirmation and readjustment of the arrangement after chip placement, etc. There is a problem that the yield and production efficiency are lowered.
  • a semiconductor device particularly, a MEMS device
  • the adhesive surface of the adhesive surface We have found that the above-mentioned problems can be solved by the integrated dying die bonding sheet, which is characterized in that the peeling mode from other non-adhesive substrates changes to cohesive failure and exhibits permanent adhesiveness.
  • the invention has been reached.
  • the subject of the present invention is an integrated dicing die bonding sheet that is bonded to the semiconductor wafer before dicing the semiconductor wafer, and has a base film and a silicone having an adhesive surface to be bonded to the semiconductor wafer.
  • a base film can be peeled off from the silicone-based adhesive sheet at a stage after dicing the semiconductor wafer and before heating to 50 ° C. or higher, and the silicone-based adhesive sheet is provided. After the adhesive surface of the adhesive sheet is heated in the range of 50 to 200 ° C., the peeling mode of the adhesive surface from other non-adhesive substrates changes to coagulation failure, and the adhesive surface exhibits permanent adhesiveness.
  • Integrated dicing Die bonding sheet solves the problem.
  • the silicone-based adhesive sheet of the present invention is preferably a crosslinked product of a crosslinkable silicone composition that is cured using a catalyst for hydrosilylation reaction, and is an organopolysiloxane 100 having an alkenyl group as a main component thereof. It contains at least one type of adhesion promoter (preferably a specific adhesion promoter or a combination thereof) in the range of 0.1 to 5.0 parts by mass with respect to parts by mass, and has a SiH / Vi ratio of 1. It is preferably in the range of 0.0 to 3.0, the surface of the adhesive sheet is slightly adhesive, and the adhesive property is such that the surface can be peeled off from the base film.
  • adhesion promoter preferably a specific adhesion promoter or a combination thereof
  • the surface of the adhesive sheet is slightly adhesive, and the adhesive property is such that the surface can be peeled off from the base film.
  • the cross-linking reaction of such a cross-linked product is substantially completed and the reaction is low at room temperature, even if it is stored for a long period of time unless it is heated to 50 ° C. or higher, it is possible to use a dicing tape such as acrylic PSA. This is because the surface of the adhesive sheet exhibits permanent adhesiveness to other non-adhesive substrates by heating while having good retention on the adhesive surface and capable of interfacial peeling. be.
  • the silicone-based adhesive sheet as described above has appropriate viscoelasticity, it is particularly excellent in stress relaxation against vibration during dicing and semiconductor stacking, and chip skipping, chipping, cracking, etc. during dicing. Can be suppressed.
  • Step 1 In the above-mentioned integrated dicing die bonding sheet, a step of exposing the surface of the silicone-based adhesive sheet on the side that is not in close contact with the base film and laminating it on the back surface of the semiconductor wafer.
  • Step 2 A step of disassembling the laminate obtained in the above step 1 by dicing.
  • Step 3 A step of interfacially peeling the base film from the individual pieces of the semiconductor wafer obtained in the above step 2 to expose the surface of the silicone-based adhesive sheet on the base film side.
  • Step 4 The individualized semiconductor wafer is placed on the semiconductor base material via the silicon-based adhesive sheet surface exposed in Step 3.
  • Step 5 The individual pieces of the semiconductor wafer obtained in Step 4 are A step of adhering individual pieces of a semiconductor wafer to a semiconductor substrate with a silicone-based adhesive sheet by heating a structure arranged on the semiconductor substrate with a silicone-based adhesive sheet surface in the range of 50 to 200 ° C. It has.
  • the silicone adhesive sheet according to the present invention is provided in a state where the cross-linking reaction is substantially completed, the interfacial peeling property is maintained between the two even when they are in close contact with the base film or its acrylic PSA layer at room temperature. It has excellent storage stability, no problems such as chip skipping, chipping, and cracking during dicing, excellent adhesiveness after peeling from the dicing tape, and excellent stability of the thickness of the adhesive layer. ..
  • the silicone-based adhesive sheet according to the present invention is such that the sheet itself can temporarily hold the semiconductor chip or the like against vibration or the like and can be temporarily fixed on the base material without going through a process such as heat crimping. If it retains the slight adhesiveness of the semiconductor chip and is not heated to 50 ° C or higher after the semiconductor chip is placed, it should be separated by interfacial peeling and the chip should be rearranged without causing permanent adhesion such as cohesive failure. Is possible. Therefore, when the chips separated by dicing using the integrated dicing die bonding sheet according to the present invention are placed on the semiconductor substrate, the chips are displaced or peeled off due to vibration or the like. Chips can be rearranged by peeling off the interface from the substrate without causing problems and, if desired, without the problem of adhesive residue.
  • the integrated dicing die bonding sheet including such a silicone adhesive sheet it is possible to improve the production efficiency and yield of the small semiconductor device including the MEMS device.
  • the integrated dicing die bonding sheet according to the present invention is composed of a base film and a silicone-based adhesive sheet laminated on the surface thereof, and a peelable protective layer is provided on the base film side and the silicone-based adhesive sheet side. May be good.
  • the surface on the silicone-based adhesive sheet side is slightly adhesive, it is particularly preferable that the surface is completely covered with a protective layer from the viewpoint of storage stability.
  • the surface of the silicone-based adhesive sheet according to the present invention is slightly adhesive, and the interface can be easily peeled off even if it adheres to the acrylic PSA layer on the base film for a long period of time.
  • it is not necessary to provide a peelable base layer or the like between the base film and the silicone-based adhesive sheet it is preferable to have a laminated structure in which both are directly integrated.
  • the base film is used for so-called dicing tape, and preferably has elasticity in the length and width direction of the film, specifically, a polyethylene film, a polyvinyl chloride film, a polybutene film, and a polybutadiene film.
  • a soft resin film such as an ethyl acid copolymer film is suitable.
  • the base film may be one in which a plurality of films are laminated.
  • the thickness of the base film is not particularly limited, but is usually about 10 to 300 ⁇ m, preferably about 50 to 200 ⁇ m.
  • a thin pressure-sensitive adhesive layer may be formed on the surface of the base film, and an acrylic-based, vinyl-based, polyurethane-based, silicone-based, or polyester-based conventional pressure-sensitive adhesive can be used as the pressure-sensitive adhesive layer. .. Among these conventional pressure-sensitive adhesives, acrylic pressure-sensitive adhesives are preferable in terms of stickiness. Further, the various pressure-sensitive adhesive layers on the base film may have a property that the peeling force is changed by irradiation with high energy rays (for example, ultraviolet rays).
  • high energy rays for example, ultraviolet rays
  • the silicone-based adhesive sheet according to the present invention Since the silicone-based adhesive sheet according to the present invention has substantially completed the cross-linking reaction and has low reactivity at room temperature, it is stored at room temperature for a long period of time in a state of being bonded to an acrylic pressure-sensitive adhesive layer or the like. However, good adhesion and interfacial peeling property between the two can be maintained, and the integrated dicing die bonding sheet as a whole is excellent in storage stability.
  • the adhesive force and the cohesive force can be controlled by appropriately adding a cross-linking agent to the pressure-sensitive adhesive containing the acrylic copolymer having the functional group.
  • a cross-linking agent include a polyvalent isocyanate compound, a polyvalent epoxy compound, a polyvalent aziridine compound, a metal chelate compound and the like.
  • Such an acrylic pressure-sensitive adhesive may contain a single or two or more kinds of acrylic-based adhesives alone or a copolymer, and may further contain various additives.
  • the base film and the silicone adhesive sheet can be better integrated.
  • the thickness of the pressure-sensitive adhesive layer is preferably 1 to 50 ⁇ m, particularly preferably 5 to 30 ⁇ m. If the base film itself is made of a material having good adhesiveness to the silicone adhesive sheet, or if the base film has a surface structure that brings about good adhesion to the silicone adhesive sheet, the above-mentioned adhesive layer is absent. It is also good.
  • Examples of the latter molecular structure of the organosiloxane include linear, linear, branched, cyclic, and reticulated with partial branches, and are particularly linear, branched, and reticulated. Is preferable.
  • Examples of the alkenyl group bonded to the silicon atom in the organosiloxane include a vinyl group, an allyl group, a butenyl group, a pentenyl group and a hexenyl group, and a vinyl group is particularly preferable.
  • composition and the sheet for the silicone-based adhesive sheet were prepared by the following methods.
  • the hardness, adhesiveness, surface condition, etc. of the obtained sheet were measured or evaluated as follows.
  • the polyether sulfone film on the opposite side of the dicing tape is peeled off, attached to a PET film with a thickness of 188 um with a double-sided tape using a silicone adhesive, and the dicing tape is peeled off to remove the dicing tape contact surface of the silicone adhesive sheet.
  • a 5 mm square silicon chip was placed on this sheet and heated at 150 ° C. for 10 seconds with a load of 20 kgf using a die-touch press.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
PCT/JP2021/046121 2020-12-25 2021-12-14 一体型ダイシングダイボンディング用シートおよび半導体装置の製造方法 Ceased WO2022138341A1 (ja)

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CN202180080411.4A CN116601252A (zh) 2020-12-25 2021-12-14 一体型切割芯片接合用片以及半导体装置的制造方法
US18/268,220 US20240087941A1 (en) 2020-12-25 2021-12-14 Integrated dicing die bonding sheet and method for producing semiconductor device
KR1020237024860A KR20230125247A (ko) 2020-12-25 2021-12-14 일체형 다이싱 다이 본딩용 시트 및 반도체 장치의 제조 방법
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WO2024135806A1 (ja) * 2022-12-23 2024-06-27 ダウ・東レ株式会社 ホットメルト性硬化性シリコーン組成物、当該組成物を用いる積層体、および半導体装置の製造方法

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CN115229887A (zh) * 2022-07-25 2022-10-25 东华大学 一种管道类支架的热固化切割处理装置及其使用方法
WO2024135806A1 (ja) * 2022-12-23 2024-06-27 ダウ・東レ株式会社 ホットメルト性硬化性シリコーン組成物、当該組成物を用いる積層体、および半導体装置の製造方法

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US20240087941A1 (en) 2024-03-14

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