TW202232579A - Substrate processing device characterized by improving the quality of the substrate - Google Patents

Substrate processing device characterized by improving the quality of the substrate Download PDF

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TW202232579A
TW202232579A TW111103491A TW111103491A TW202232579A TW 202232579 A TW202232579 A TW 202232579A TW 111103491 A TW111103491 A TW 111103491A TW 111103491 A TW111103491 A TW 111103491A TW 202232579 A TW202232579 A TW 202232579A
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substrate
width direction
conveyance
rollers
processing apparatus
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TW111103491A
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Chinese (zh)
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TWI788210B (en
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西部幸伸
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日商芝浦機械電子裝置股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • B05C11/1015—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to a conditions of ambient medium or target, e.g. humidity, temperature ; responsive to position or movement of the coating head relative to the target
    • B05C11/1018—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to a conditions of ambient medium or target, e.g. humidity, temperature ; responsive to position or movement of the coating head relative to the target responsive to distance of target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1044—Apparatus or installations for supplying liquid or other fluent material to several applying apparatus or several dispensing outlets, e.g. to several extrusion nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G13/00—Roller-ways
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G39/00—Rollers, e.g. drive rollers, or arrangements thereof incorporated in roller-ways or other types of mechanical conveyors 
    • B65G39/02—Adaptations of individual rollers and supports therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/061—Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2201/00—Indexing codes relating to handling devices, e.g. conveyors, characterised by the type of product or load being conveyed or handled
    • B65G2201/02—Articles
    • B65G2201/0214—Articles of special size, shape or weigh
    • B65G2201/022—Flat

Abstract

The present invention provides a substrate processing device capable of improving the quality of the substrate. Embodiment is a substrate processing device that processes the substrate with warpage and includes: a number of delivery rollers, which two delivery rollers that are spaced and arranged in the width direction orthogonal to the delivery direction of the substrate are to be one set, and several sets are arranged along the delivery direction to support the concave side and rotate around the shaft for delivering the substrate; a number of first shafts, which two shafts that are spaced and arranged in the width direction are to be one set, and several sets are arranged along the delivery direction, and the delivery rollers are provided thereon; and a fluid supplying portion supplying fluid for the concave surface of the substrate, wherein the fluid supplying portion supplies the concave surface of the substrate with the fluid from the position between the delivery rollers of each set spaced in the width direction.

Description

基板處理裝置Substrate processing equipment

本發明的實施方式是有關於一種基板處理裝置。Embodiments of the present invention relate to a substrate processing apparatus.

在液晶顯示裝置或半導體元件等的製造步驟中，使用的是對玻璃基板或半導體基板等基板進行處理的基板處理裝置。作為基板處理，例如有抗蝕劑塗布處理、抗蝕劑剝離處理、蝕刻處理、清洗處理、乾燥處理。基板處理裝置一邊通過多個搬送輥來搬送基板，一邊對於所述基板，通過供給工具來供給例如處理液或乾燥用的氣體之類的處理用的流體而對基板進行處理。 [現有技術文獻] [專利文獻] In the manufacturing steps of liquid crystal display devices, semiconductor elements, and the like, substrate processing apparatuses that process substrates such as glass substrates and semiconductor substrates are used. Examples of substrate treatment include resist coating treatment, resist stripping treatment, etching treatment, cleaning treatment, and drying treatment. The substrate processing apparatus processes the substrate by supplying a processing fluid such as a processing liquid or a drying gas to the substrate while conveying the substrate by a plurality of conveying rollers. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開平11-10096號公報[Patent Document 1] Japanese Patent Laid-Open No. 11-10096

[發明所要解決的問題] 作為搬送對象的基板通常為平板狀的基板，但其中也有具有翹曲的基板。例如，當使用厚度薄至1 mm左右的基板來作為處理對象基板，在所述基板的其中一個面進行成膜時，基板會因膜的應力而翹曲。因此，有時基板的其中一個面為凹面而另一面為凸面。若如上所述那樣具有翹曲的基板將凹面朝上地，由多個搬送輥以保持著翹曲的狀態予以搬送，則來自供給工具的處理用的流體會滯留於凹面的中央部，從而對基板的處理會變得不充分或者不均勻。因此，例如有時會發生塗布不均、剝離不均、蝕刻不均、清洗不均、乾燥不均等的處理不均，從而基板的品質將下降。 [Problems to be Solved by Invention] The substrate to be conveyed is usually a flat substrate, but there are also substrates having warpage. For example, when a substrate having a thickness as thin as about 1 mm is used as a substrate to be processed and a film is formed on one surface of the substrate, the substrate may warp due to the stress of the film. Therefore, one surface of the substrate may be concave and the other surface may be convex. If the substrate having the warp as described above is conveyed with the concave surface facing upward by the plurality of conveying rollers with the warpage maintained, the processing fluid from the supply tool will stay in the center portion of the concave surface, causing the Treatment of the substrate may become insufficient or non-uniform. Therefore, for example, processing unevenness, such as uneven coating, uneven peeling, uneven etching, uneven cleaning, and uneven drying, may occur, and the quality of the substrate may be degraded.

本發明所要解決的問題在於，提供一種可提高基板的品質的基板處理裝置。 [解決問題的技術手段] The problem to be solved by the present invention is to provide a substrate processing apparatus which can improve the quality of the substrate. [Technical means to solve the problem]

本發明的實施方式是一種基板處理裝置，處理具有翹曲的基板，且所述基板處理裝置包括：搬送輥，將在與所述基板的搬送方向正交的寬度方向上隔開地設置的兩個作為一組，沿著所述基板的搬送方向設置有多組，支撐所述基板的凹面側來搬送所述基板；第一軸，將在所述寬度方向上隔開地設置的兩根作為一組，沿著所述基板的搬送方向設置有多組，安裝有所述搬送輥；以及流體供給部，向所述基板的凹面供給流體，所述流體供給部從在所述寬度方向上隔開的所述搬送輥之間向所述基板的凹面供給流體。 [發明的效果] An embodiment of the present invention is a substrate processing apparatus for processing a substrate having warpage, and the substrate processing apparatus includes a conveyance roller that separates two rollers provided in a width direction perpendicular to the conveyance direction of the substrate. As a set, a plurality of sets are provided along the conveying direction of the substrate, and the concave surface side of the substrate is supported to convey the substrate; the first axis is provided with two sets spaced apart in the width direction as One set, a plurality of sets are provided along the conveyance direction of the substrate, and the conveyance rollers are attached; and a fluid supply part supplies fluid to the concave surface of the substrate, and the fluid supply part is spaced apart from the width direction. A fluid is supplied to the concave surface of the substrate between the open conveyance rollers. [Effect of invention]

根據本發明的實施方式，可提高基板的品質。According to the embodiment of the present invention, the quality of the substrate can be improved.

參照圖1～圖4對實施方式的基板處理裝置10進行說明。此外，附圖的尺寸以及形狀並非反映實際的基板及裝置的準確的尺寸及形狀，為了容易理解，存在誇張地表達的部分。另外，在以下的說明中，將順從重力的方向設為「下方」，將抵抗重力的方向設為「上方」，但這些方向並不限定裝置的設置方向。The substrate processing apparatus 10 of the embodiment will be described with reference to FIGS. 1 to 4 . In addition, the dimensions and shapes of the drawings do not reflect the exact dimensions and shapes of actual substrates and devices, and some parts are exaggerated for easy understanding. In addition, in the following description, the direction complying with gravity is referred to as "downward", and the direction against gravity is referred to as "upper", but these directions do not limit the installation direction of the device.

[基板] 如圖1以及圖2所示，在本實施方式中，作為搬送對象、處理對象的基板W具有翹曲。作為基板W，例如使用玻璃基板等矩形形狀的薄型基板。在本實施方式中，基板W的厚度為0.5 mm～1.1 mm左右，基板W的翹曲量為7 mm～10 mm左右。在圖中，示出了基板W的短邊方向沿著U字形的形狀，但實際的矩形形狀的基板W的翹曲處於基板W的四周。因翹曲而基板W的其中一個面收縮，另一個面伸展。將因收縮而凹陷的面設為凹面S1，將因伸展而隆起的面設為凸面S2。本實施方式的基板W是將凹面S1作為處理面。例如，使用如多層基板那樣在處理面形成有電路的圖案P的基板W。此外，在基板W的處理面的外緣附近，存在未形成有圖案P的區域。將處理面的形成有圖案P的區域設為「圖案形成區域」，將位於圖案形成區域的外周的未形成有圖案P的區域設為「非圖案形成區域」。 [substrate] As shown in FIG. 1 and FIG. 2 , in the present embodiment, the substrate W to be conveyed or to be processed has warpage. As the substrate W, for example, a rectangular thin substrate such as a glass substrate is used. In the present embodiment, the thickness of the substrate W is about 0.5 mm to 1.1 mm, and the warpage amount of the substrate W is about 7 mm to 10 mm. In the figure, the short-side direction of the substrate W is shown along the U-shape, but the warpage of the substrate W in the actual rectangular shape is around the substrate W. As shown in FIG. Due to the warpage, one surface of the substrate W shrinks, and the other surface expands. Let the surface dented by shrinkage be the concave surface S1, and the surface raised by the expansion shall be the convex surface S2. The substrate W of the present embodiment has the concave surface S1 as a processing surface. For example, the substrate W in which the pattern P of the circuit is formed on the processing surface like a multilayer substrate is used. Moreover, in the vicinity of the outer edge of the processing surface of the board|substrate W, the area|region in which the pattern P is not formed exists. The area where the pattern P was formed on the processing surface was referred to as a "pattern formation area", and the area on the outer periphery of the pattern formation area where the pattern P was not formed was referred to as a "non-pattern formation area".

[基本結構] 本實施方式的基板處理裝置10是一邊支撐凹面S1側來搬送基板W，一邊對作為處理面的凹面S1進行處理的裝置。當如上所述那樣以凹面S1為下方、凸面S2為上方的方式進行搬送時，基本上，只要僅通過基板W的端部的支撐，便能夠穩定地搬送。而且，基板處理裝置10對下方的凹面S1進行處理。所述基板處理裝置10具有：處理室21、基板搬送裝置30、流體供給部40、控制部50。處理室21為在內部具有對基板W進行搬送的搬送路徑T的框體，且形成為基板W能夠沿著搬送路徑T而通過內部。處理室21作為用於對在搬送路徑T上移動的基板W進行處理的場所發揮功能。基板W的處理在本實施方式中為清洗與乾燥。在處理室21的底面，形成有排出處理液的排出口（未圖示）。 [basic structure] The substrate processing apparatus 10 of the present embodiment is an apparatus that processes the concave surface S1 as a processing surface while supporting the concave surface S1 side and conveying the substrate W. As described above, when the concave surface S1 is downward and the convex surface S2 is upward, the conveyance can be stably conveyed only by the support of the end portion of the substrate W basically. Then, the substrate processing apparatus 10 processes the lower concave surface S1. The substrate processing apparatus 10 includes a processing chamber 21 , a substrate transfer apparatus 30 , a fluid supply unit 40 , and a control unit 50 . The processing chamber 21 is a housing having a conveyance path T for conveying the substrates W therein, and is formed so that the substrates W can pass through the interior along the conveyance path T. As shown in FIG. The processing chamber 21 functions as a place for processing the substrate W moving on the conveyance path T. As shown in FIG. The processing of the substrate W is cleaning and drying in this embodiment. A discharge port (not shown) for discharging the processing liquid is formed on the bottom surface of the processing chamber 21 .

基板搬送裝置30具有多個搬送輥31以及多個按壓輥32。基板搬送裝置30是遍及處理室21的整個內部而設置，利用各按壓輥32來按壓基板W的凸面S2，並且利用各搬送輥31來支撐凹面S1側而搬送基板W。The board|substrate conveyance apparatus 30 has several conveyance rollers 31 and several pressing rollers 32. The substrate transfer device 30 is installed over the entire interior of the processing chamber 21 , and the convex surface S2 of the substrate W is pressed by each pressing roller 32 , and the substrate W is transferred by supporting the concave surface S1 side by each transfer roller 31 .

[基板搬送裝置] （搬送輥與按壓輥的配置） 基板搬送裝置30如上所述那樣將凹面S1設為下方來搬送基板W。各搬送輥31是沿著基板W的搬送方向Td而以規定間隔排列於搬送路徑T的下方。各按壓輥32以隔著搬送路徑T而隔開地與各搬送輥31的組分別相向的方式定位於搬送路徑T的上方，且以與各搬送輥31的規定間隔相同的規定間隔沿著搬送方向Td排列。這些搬送輥31及按壓輥32在處理室21內，以在圖1中的上下方向上相向的方式配置，分別設置成能夠旋轉，且構成為通過驅動機構（未圖示）而相互同步地旋轉。搬送輥31在圖1中順時針旋轉，按壓輥32逆時針旋轉。 [Substrate transfer device] (Arrangement of conveying roller and pressing roller) The substrate transfer device 30 transfers the substrate W with the concave surface S1 downward as described above. The conveyance rollers 31 are arranged below the conveyance path T at predetermined intervals along the conveyance direction Td of the substrate W. As shown in FIG. Each of the pressing rollers 32 is positioned above the conveyance path T so as to face each group of the conveyance rollers 31 spaced apart from the conveyance path T, and is conveyed along the conveyance path at a predetermined interval equal to the predetermined interval of the respective conveyance rollers 31 . Alignment in direction Td. These conveying rollers 31 and pressing rollers 32 are arranged in the processing chamber 21 so as to face each other in the up-down direction in FIG. 1 , are respectively rotatable, and are configured to rotate in synchronization with each other by a drive mechanism (not shown). . The conveyance roller 31 rotates clockwise in FIG. 1 , and the pressing roller 32 rotates counterclockwise.

在處理室21內，將以隔著搬送路徑T而隔開地相向的方式配置的搬送輥31（在本實施方式中兩個為一組）與按壓輥32作為一組，設置有多組，處理室21內的每組的搬送輥31與按壓輥32之間的隔開距離H成為一定。在本實施方式中，隔開距離H是與搬送路徑垂直的方向、例如鉛直方向上的隔開距離。所謂隔開距離H成為一定，例如是指成為基板W的翹曲量以下的能夠搬送基板的規定距離。所謂翹曲量，是指載置有基板W的平面與載置在所述平面的基板W的上表面的最大鉛直隔開距離。In the processing chamber 21, a plurality of sets of the conveying rollers 31 (two in this embodiment are set as a set) and the pressing rollers 32 are arranged so as to face each other across the conveying path T as a set, and a plurality of sets are provided. The separation distance H between the conveyance rollers 31 and the pressing rollers 32 for each set in the processing chamber 21 is constant. In the present embodiment, the separation distance H is the separation distance in the direction perpendicular to the conveyance path, for example, in the vertical direction. The fact that the separation distance H is constant means, for example, a predetermined distance at which the substrate can be transported, which is equal to or less than the warpage amount of the substrate W. As shown in FIG. The amount of warpage refers to the maximum vertical distance between the plane on which the substrate W is placed and the upper surface of the substrate W placed on the plane.

（搬送輥的具體結構） 如圖2所示，搬送輥31支撐基板W的凹面S1側，以在水平面內與基板W的搬送方向Td正交的軸心a為旋轉軸進行旋轉，由此搬送基板W。搬送輥31具有位於同一軸心a上的圓柱部31a與凸緣狀部31b。圓柱部31a與基板W的凹面S1側的端部相接來支撐基板W。圓柱部31a例如是將橡膠或樹脂作為原材料的輥。圓柱部31a的軸為與搬送方向Td正交的寬度方向X。包括所述圓柱部31a的搬送輥31將在寬度方向X上隔開地設置的兩個作為一組，沿著搬送方向Td配置有多組。各組的兩個圓柱部31a為相同直徑。 (Concrete structure of the conveying roller) As shown in FIG. 2 , the transport roller 31 supports the concave surface S1 side of the substrate W, and transports the substrate W by rotating the axis a perpendicular to the transport direction Td of the substrate W in the horizontal plane as a rotation axis. The conveyance roller 31 has a cylindrical portion 31a and a flange-shaped portion 31b located on the same axis a. The cylindrical portion 31 a is in contact with the end portion of the substrate W on the side of the concave surface S1 to support the substrate W. The cylindrical portion 31a is, for example, a roller made of rubber or resin. The axis of the cylindrical portion 31a is the width direction X orthogonal to the conveyance direction Td. The conveyance rollers 31 including the cylindrical portion 31a are provided in a set of two at a distance in the width direction X, and a plurality of sets are arranged along the conveyance direction Td. The two cylindrical portions 31a of each group have the same diameter.

此外，所述搬送輥31與按壓輥32的隔開距離H是與基板W相接的部分的距離，在本實施方式中，是圓柱部31a的外周面與按壓輥32的外周面的距離。即，搬送輥31與按壓輥32的隔開距離H包含為搬送輥31的一部分與按壓輥32的距離的情況。另外，本實施方式的搬送路徑T位於搬送輥31的圓柱部31a與按壓輥32之間。The distance H between the conveying roller 31 and the pressing roller 32 is the distance between the portion contacting the substrate W, and in this embodiment, the distance between the outer peripheral surface of the cylindrical portion 31 a and the outer peripheral surface of the pressing roller 32 . That is, the separation distance H between the conveying roller 31 and the pressing roller 32 includes the case where the distance between a part of the conveying roller 31 and the pressing roller 32 is included. In addition, the conveyance path T of this embodiment is located between the cylindrical portion 31 a of the conveyance roller 31 and the pressing roller 32 .

凸緣狀部31b是在兩個搬送輥31中的圓柱部31a的相反的端部以直徑變大的方式設置的部分。凸緣狀部31b能夠抵接於基板W的沿著搬送方向Td的端部。The flange-shaped part 31b is a part provided so that a diameter may become large in the opposite end part of the cylindrical part 31a among the two conveyance rollers 31. As shown in FIG. The flange-shaped part 31b can contact|abut the edge part of the board|substrate W along the conveyance direction Td.

此外，如圖3所示，每組的搬送輥31彼此的隔開距離D（各組的圓柱部31a彼此的相向面間的距離）設為一定。若將具有翹曲的基板W的俯視下的寬度方向X上的長度設為L，則所述隔開距離D優選為設為D≦L。另外，若將各組的搬送輥31的凸緣狀部31b的隔開距離（相向面間的距離）設為d，則優選為設為d≧L。由此，能夠利用搬送輥31支撐基板W的端部。進而，如圖2所示，若將基板W的俯視下的圖案形成區域的寬度方向X上的長度設為Lp，則優選為設為D＞Lp。由此，可抑制由後述的流體供給部40供給的流體向圖案P的供給被搬送輥31阻擋。此外，圓柱部31a的軸向上的長度ax為（d-D）/2。Furthermore, as shown in FIG. 3 , the distance D between the conveyance rollers 31 in each group (the distance between the opposing surfaces of the cylindrical portions 31 a in each group) is made constant. Assuming that the length in the width direction X of the substrate W having warpage in a plan view is L, the separation distance D is preferably set to D≦L. Moreover, if the separation distance (distance between opposing surfaces) of the flange-shaped part 31b of the conveyance roller 31 of each group is set to d, it is preferable to set it as d≧L. Thereby, the edge part of the board|substrate W can be supported by the conveyance roller 31. FIG. Furthermore, as shown in FIG. 2 , when the length in the width direction X of the pattern formation region in the plan view of the substrate W is defined as Lp, it is preferable to satisfy D>Lp. Thereby, it can suppress that the supply of the fluid supplied from the fluid supply part 40 mentioned later to the pattern P is blocked by the conveyance roller 31. Moreover, the length ax of the axial direction of the cylindrical part 31a is (d-D)/2.

進而，在搬送輥31，與其同軸地設置有第一軸31c。第一軸31c將在寬度方向X上隔開地設置的兩根作為一組，沿著搬送方向Td設置有多組，安裝有搬送輥31。即，在各組的兩個搬送輥31，在寬度方向X上隔開且相互同軸地分別設置有兩根第一軸31c。第一軸31c的直徑比圓柱部31a細，且設置於各組的兩個圓柱部31a的相互相反的端面。多個第一軸31c例如通過未圖示的具有螺旋齒輪（斜齒輪）的驅動機構而能夠同步旋轉地設置。各組的兩個搬送輥31均以相同的圓周速度受到旋轉驅動。Furthermore, the conveyance roller 31 is provided with the first shaft 31c coaxially therewith. The first shafts 31c are provided in a plurality of sets along the conveyance direction Td, and the conveyance rollers 31 are attached to two sets of the first shafts 31c provided at a distance from each other in the width direction X. That is, the two conveyance rollers 31 of each group are spaced apart in the width direction X, and the two first shafts 31c are respectively provided coaxially with each other. The diameter of the first shaft 31c is smaller than that of the cylindrical portion 31a, and is provided on the opposite end surfaces of the two cylindrical portions 31a of each group. The plurality of first shafts 31c are provided so as to be able to rotate in synchronization with, for example, a drive mechanism having a helical gear (helical gear) not shown. The two conveyance rollers 31 of each group are rotationally driven at the same peripheral speed.

當第一軸31c旋轉時，安裝於所述第一軸31c的各圓柱部31a將第一軸31c作為旋轉的軸而旋轉。搬送輥31對凹面S1側的非圖案形成區域或者基板W的沿著搬送方向Td的端部進行支撐而沿搬送方向Td予以搬送。如圖2所示，在所搬送的基板W中的寬度方向X的圖案形成區域的下部，成為無第一軸31c的狀態。When the first shaft 31c rotates, each cylindrical portion 31a attached to the first shaft 31c rotates using the first shaft 31c as a rotating shaft. The conveyance roller 31 supports the non-pattern forming area on the concave surface S1 side or the end portion of the substrate W along the conveyance direction Td, and conveys it in the conveyance direction Td. As shown in FIG. 2, in the lower part of the pattern formation area of the width direction X in the conveyed board|substrate W, it is the state which does not have the 1st axis|shaft 31c.

（按壓輥的具體結構） 按壓輥32是將寬度方向X設為軸的圓形。如圖2所示，按壓輥32以在各搬送輥31的上方且抵接於基板W的凸面S2的中央的方式，在各搬送輥31的上方且與位於成組的兩個搬送輥31之間的空間中的寬度方向X的中央相向地設置。在按壓輥32，同軸地設置有第二軸32a。第二軸32a與第一軸31c平行地配置。第二軸32a的直徑比按壓輥32細，且遍及超過基板W的寬度方向X上的長度的長度，而在處理室21內，例如通過未圖示的具有直齒輪（正齒輪）的驅動機構能夠同步旋轉地設置。 (The specific structure of the pressing roller) The pressing roller 32 is circular with the width direction X as its axis. As shown in FIG. 2 , the pressing roller 32 is positioned above each transfer roller 31 and positioned between the two transfer rollers 31 in a group so as to be in contact with the center of the convex surface S2 of the substrate W above each transfer roller 31 . The center in the width direction X in the space between them is arranged to face each other. The pressing roller 32 is provided with a second shaft 32a coaxially. The second shaft 32a is arranged in parallel with the first shaft 31c. The diameter of the second shaft 32 a is smaller than that of the pressing roller 32 , and extends over a length exceeding the length in the width direction X of the substrate W, and is used in the processing chamber 21 by, for example, a drive mechanism having a spur gear (spur gear) not shown. Can be set to rotate synchronously.

當第二軸32a旋轉時，安裝於所述第二軸32a的按壓輥32一邊與凸面S2相接，一邊將第二軸32a作為旋轉軸而旋轉。搬送輥31與按壓輥32均被控制成以相同的圓周速度受到旋轉驅動。When the second shaft 32a is rotated, the pressing roller 32 attached to the second shaft 32a is rotated using the second shaft 32a as a rotation shaft while being in contact with the convex surface S2. Both the conveying roller 31 and the pressing roller 32 are controlled to be rotationally driven at the same peripheral speed.

[流體供給部] 如圖1及圖2所示，在處理室21設置有流體供給部40。流體供給部40對於基板W，從在寬度方向X上隔開的各組的搬送輥31之間向基板W的凹面S1供給流體。流體供給部40具有液體噴射部41以及氣體吹出部42。 [Fluid Supply Section] As shown in FIGS. 1 and 2 , the processing chamber 21 is provided with a fluid supply unit 40 . The fluid supply unit 40 supplies a fluid to the concave surface S1 of the substrate W from between the conveyance rollers 31 of the respective groups spaced apart in the width direction X with respect to the substrate W. As shown in FIG. The fluid supply unit 40 has a liquid injection unit 41 and a gas blowing unit 42 .

（液體噴射部） 液體噴射部41對在搬送路徑T上移動的基板W的處理面噴射並供給處理液。液體噴射部41設置成與所搬送的基板W隔著搬送路徑T而隔開地與基板W相向，以便不妨礙基板搬送裝置30對基板W的搬送。此外，在液體噴射部41與搬送路徑T之間不介隔存在有軸或輥等。當通過液體噴射部41向搬送路徑T噴射處理液時，處理液被供給至在搬送路徑T上移動的基板W的凹面S1。對於處理液，針對每個目標處理而適用清洗液、剝離液、顯影液、淋洗液（純水等）。 (Liquid ejection part) The liquid ejecting unit 41 ejects and supplies the processing liquid to the processing surface of the substrate W moving on the conveyance path T. As shown in FIG. The liquid ejecting unit 41 is provided so as to face the substrate W at a distance from the substrate W to be transferred across the transfer path T so as not to interfere with the transfer of the substrate W by the substrate transfer device 30 . In addition, a shaft, a roller, etc. are not interposed between the liquid ejection part 41 and the conveyance path T. When the treatment liquid is ejected to the conveyance path T by the liquid ejection portion 41 , the treatment liquid is supplied to the concave surface S1 of the substrate W moving on the conveyance path T. As shown in FIG. For the processing liquid, a cleaning liquid, a stripping liquid, a developing liquid, and a rinsing liquid (pure water, etc.) are applied for each target processing.

更具體而言，作為液體噴射部41，例如可使用具有多個貫穿孔的噴淋管（shower pipe）或包括多個噴嘴的管。如圖1及圖2所示，本實施方式的液體噴射部41具有在沿著搬送方向Td的方向上延伸的多個管411，通過多個管411在寬度方向X上排列地配置來構成。在本實施方式中，如圖2所示，在靠近在寬度方向X上隔開地設置的兩個搬送輥31的位置上分別各配置一個管411A、管411C，在兩個搬送輥31之間的寬度方向X的中央配置一個管411B。以下，在不區別管411A、管411B、管411C的情況下，作為管411進行說明。在管411連接有包括未圖示的泵及罐的處理液的供給源。More specifically, as the liquid ejection portion 41 , for example, a shower pipe having a plurality of through holes or a pipe including a plurality of nozzles can be used. As shown in FIGS. 1 and 2 , the liquid ejecting portion 41 of the present embodiment includes a plurality of tubes 411 extending in the direction along the conveyance direction Td, and is configured by arranging the plurality of tubes 411 in a row in the width direction X. As shown in FIG. In the present embodiment, as shown in FIG. 2 , a tube 411A and a tube 411C are respectively arranged at positions close to two conveyance rollers 31 provided to be spaced apart in the width direction X, and between the two conveyance rollers 31 . One pipe 411B is arranged in the center of the width direction X of the . Hereinafter, when the tube 411A, the tube 411B, and the tube 411C are not distinguished, the tube 411 will be described. A supply source of the treatment liquid including a pump and a tank not shown is connected to the pipe 411 .

在管411，在寬度方向X上設置有多個噴出部412。在本實施方式中，噴出部412是從噴出口向所搬送的基板W的處理面呈噴淋狀供給處理液的噴嘴。即，噴出部412從基板W的下方對基板W的下表面噴出處理液。噴出部412也可為貫通孔。將設置於各管411A、管411B、管411C的噴出部412設為412A、412B、412C，在不對它們進行區別的情況下，作為噴出部412進行說明。The pipe 411 is provided with a plurality of ejection portions 412 in the width direction X. As shown in FIG. In the present embodiment, the ejection portion 412 is a nozzle for supplying the processing liquid in a shower shape to the processing surface of the substrate W to be conveyed from the ejection port. That is, the ejection unit 412 ejects the processing liquid to the lower surface of the substrate W from below the substrate W. As shown in FIG. The ejection portion 412 may also be a through hole. The ejection portion 412 provided in each of the tubes 411A, 411B, and 411C is referred to as 412A, 412B, and 412C, and will be described as the ejection portion 412 unless they are distinguished.

沿著寬度方向X配置的多個噴出部412設定為：與位於靠近各組的兩個搬送輥31的一側、即位於寬度方向X的兩端側的噴出部412相比，位於遠離各組的兩個搬送輥31的一側、即位於寬度方向X的中央側的噴出部412的處理液的每單位時間的噴出量（以下，有時簡稱為「噴出量」）更多。在本實施方式中，與噴出部412A、噴出部412C的噴出量相比，噴出部412B的噴出量更多。為了設為此種噴出量，沿著寬度方向X配置的多個噴出部412各別地可變地設置要噴出的處理液的每單位時間的流量。更具體而言，控制部50通過控制與管411連接的配管上所設置的閥（未圖示）來調整在各管411中流動的處理液的量。The plurality of ejection parts 412 arranged along the width direction X are set so as to be located farther from each group than the ejection parts 412 located on the side of the two conveyance rollers 31 near each group, that is, on both end sides in the width direction X One side of the two conveying rollers 31 , that is, the ejection portion 412 located at the center side in the width direction X has a larger amount of treatment liquid ejected per unit time (hereinafter, sometimes abbreviated as “discharge amount”). In the present embodiment, the ejection amount of the ejection portion 412B is larger than the ejection amount of the ejection portion 412A and the ejection portion 412C. In order to set such a discharge amount, the plurality of discharge portions 412 arranged along the width direction X are individually set to variably set the flow rate per unit time of the processing liquid to be discharged. More specifically, the control unit 50 adjusts the amount of the processing liquid flowing in each pipe 411 by controlling a valve (not shown) provided in the pipe connected to the pipe 411 .

（氣體吹出部） 氣體吹出部42對在搬送路徑T上移動的基板W，例如吹出並供給空氣或氮氣之類的乾燥用的氣體。氣體吹出部42設置成與所搬送的基板W隔著搬送路徑T而隔開地與基板W相向，以便不妨礙基板搬送裝置30對基板W的搬送。此外，在氣體吹出部42與搬送路徑T之間，不介隔存在有軸或輥等。氣體吹出部42向通過搬送路徑T的基板W高壓地吹出氣體，將附著於基板W的清洗液等處理液吹走而使基板W的處理面乾燥。 (gas blowing part) The gas blowing unit 42 blows out and supplies a drying gas such as air or nitrogen to the substrate W moving on the conveyance path T, for example. The gas blowing unit 42 is provided so as to face the substrate W separated from the substrate W to be transferred across the transfer path T so as not to interfere with the transfer of the substrate W by the substrate transfer device 30 . In addition, between the gas blowing part 42 and the conveyance path T, there are no shafts, rollers, or the like interposed therebetween. The gas blowing unit 42 blows gas at high pressure to the substrate W passing through the conveyance path T, blows away processing liquid such as cleaning liquid adhering to the substrate W, and dries the processing surface of the substrate W.

例如，如圖1及圖2所示，氣體吹出部42是具有比具有翹曲的基板W的寬度長的狹縫狀的吹出口42a的氣刀（air knife）。氣體吹出部42設置成從吹出口42a向搬送方向Td的上游側吹出氣體，將附著於基板W的液體吹走。For example, as shown in FIGS. 1 and 2 , the gas blowing unit 42 is an air knife having a slit-shaped blowing port 42 a longer than the width of the substrate W having warpage. The gas blowing unit 42 is provided so as to blow out the gas from the blower port 42a to the upstream side in the conveyance direction Td, and blow off the liquid adhering to the substrate W.

[控制部] 如圖1所示，控制部50是對基板搬送裝置30、流體供給部40等基板處理裝置10的各部進行控制的電腦，具有存儲與基板搬送及基板處理相關的各種資訊及程序等的存儲部、以及執行各種程序的處理器。如上所述，本實施方式的控制部50通過對閥進行控制來調整在管411中流動的處理液的量，與靠近各組的兩個搬送輥31的端部側、即寬度方向X的兩端側相比，遠離各組的兩個搬送輥31的中央側、即寬度方向X的中央及其附近的噴出量更多。 [Control Department] As shown in FIG. 1 , the control unit 50 is a computer that controls each unit of the substrate processing apparatus 10 such as the substrate transfer device 30 and the fluid supply unit 40 , and has a storage unit that stores various information and programs related to substrate transfer and substrate processing. , and processors that execute various programs. As described above, the control unit 50 of the present embodiment controls the valve to adjust the amount of the treatment liquid flowing in the pipe 411, and the amount of the treatment liquid that is close to the ends of the two conveyance rollers 31 of each group, that is, the two sides in the width direction X are adjusted. Compared with the end side, the discharge amount is larger on the center side of the two conveyance rollers 31 of each group, that is, the center in the width direction X and its vicinity.

[動作] 接著，對基板處理裝置10的動作進行說明。此外，以下的動作是利用清洗液對基板W進行清洗並予以乾燥的動作的一例。如上所述，基板處理裝置10中，基板搬送裝置30的各搬送輥31及各按壓輥32同步地旋轉，基板W在凹面S1側的端部支撐於各搬送輥31上的狀態下，沿搬送方向Td受到搬送而沿著搬送路徑T移動，通過處理室21。 [action] Next, the operation of the substrate processing apparatus 10 will be described. In addition, the following operation|movement is an example of the operation|movement which washes and dries the board|substrate W with a cleaning liquid. As described above, in the substrate processing apparatus 10, the respective transport rollers 31 and the respective pressing rollers 32 of the substrate transport device 30 are rotated synchronously, and the substrate W is transported along the concave surface S1 side end supported by the respective transport rollers 31. The direction Td is conveyed, moves along the conveyance path T, and passes through the processing chamber 21 .

在處理室21中，處於由各管411的噴出部412從搬送路徑T的下方預先供給清洗液的液體供給狀態。當具有翹曲的基板W受到搬送而通過所述處於液體供給狀態的區域時，基板W的凹面S1被供給清洗液而受到清洗。在基板W的凹面S1側，為無第一軸31c的狀態，供給至基板W的凹面S1的清洗液不會被第一軸31c阻擋，而碰觸圖案形成區域。供給至基板W的清洗液向基板W的端部流動而從端部落下，並流經處理室21的底面而從排出口排出。The processing chamber 21 is in a liquid supply state in which the cleaning liquid is preliminarily supplied from the lower side of the conveyance path T by the ejection portion 412 of each pipe 411 . When the substrate W having warpage is conveyed and passes through the region in the liquid supply state, the concave surface S1 of the substrate W is supplied with cleaning liquid and cleaned. On the concave surface S1 side of the substrate W, there is no first shaft 31c, and the cleaning solution supplied to the concave surface S1 of the substrate W is not blocked by the first shaft 31c, but touches the pattern forming area. The cleaning liquid supplied to the substrate W flows toward the end of the substrate W and falls from the end, flows through the bottom surface of the processing chamber 21 and is discharged from the discharge port.

此外，凹面S1以從中央向兩端下降的方式傾斜。因此，從靠近基板W的端部的噴出部412A、噴出部412C供給的清洗液不會到達中央，而是從端部落下。另一方面，在本實施方式中，通過從噴出部412B向基板W的凹面S1的中央供給清洗液，形成從中央向端部沖走污染物的流動。由此，可將存在於基板W的處理面的污染物去除。In addition, the concave surface S1 is inclined so as to descend from the center to both ends. Therefore, the cleaning liquid supplied from the ejection portion 412A and the ejection portion 412C near the end of the substrate W does not reach the center, but falls from the end. On the other hand, in the present embodiment, by supplying the cleaning liquid from the ejection portion 412B to the center of the concave surface S1 of the substrate W, a flow is formed that washes away contaminants from the center to the ends. Thereby, the contaminants existing on the processing surface of the substrate W can be removed.

但是，由於基板W具有翹曲，因此在凹面S1的中央相較於端部而距噴出部412的距離長時，在噴出部412的配置高度位置一定的情況下，若將中央的噴出部412B的流量設為與兩端的噴出部412A、噴出部412C的流量相同，則有時無法向凹面S1的中央供給充分的流量的清洗液。於是，清洗液在到達凹面S1的端部之前滯留或落下，從而會導致由污染物的滯留引起的再次附著。在本實施方式中，使中央的噴出部412B的流量比靠近端部的噴出部412A、噴出部412C多，因此向凹面S1的中央供給充分的流量的清洗液，而可形成從中央向端部的流動，從而可將污染物去除。However, since the substrate W has warpage, when the center of the concave surface S1 is longer than the end from the ejection portion 412, and the arrangement height of the ejection portion 412 is constant, if the central ejection portion 412B is If the flow rate is set to be the same as the flow rate of the discharge portions 412A and 412C at both ends, a sufficient flow rate of cleaning liquid may not be supplied to the center of the concave surface S1. Then, the cleaning liquid stays or falls before reaching the end of the concave surface S1, and re-adhesion due to retention of contaminants occurs. In the present embodiment, since the flow rate of the central ejection portion 412B is larger than that of the ejection portions 412A and 412C near the end portions, a sufficient flow rate of cleaning liquid is supplied to the center of the concave surface S1, and the formation from the center to the end portion can be formed. flow to remove contaminants.

在處理室21中，通過氣體吹出部42從搬送路徑T的下方預先供給乾燥用的氣體。當基板W通過所述處於氣體供給狀態的區域時，附著於基板W的凹面S1的清洗液通過氣體的吹附被吹走，基板W變得乾燥。從基板W吹走的清洗液流經處理室21的底面而從排出口排出。In the processing chamber 21, the gas for drying is supplied in advance from the lower part of the conveyance path T by the gas blowing part 42. As shown in FIG. When the substrate W passes through the region in the gas supply state, the cleaning liquid adhering to the concave surface S1 of the substrate W is blown away by the blowing of the gas, and the substrate W is dried. The cleaning liquid blown away from the substrate W flows through the bottom surface of the processing chamber 21 and is discharged from the discharge port.

[實施方式的效果] （1）本實施方式是一種基板處理裝置10，對具有翹曲的基板W進行處理，且所述基板處理裝置10包括：多個搬送輥31，將在與基板W的搬送方向Td正交的寬度方向X上隔開地設置的兩個作為一組，沿著搬送方向Td設置有多組，支撐凹面S1側並以軸為中心旋轉，由此搬送基板W；第一軸31c，將在寬度方向X上隔開地設置的兩根作為一組，沿著搬送方向Td設置有多組，安裝有搬送輥31；以及流體供給部40，向基板W的凹面S1供給流體。 [Effect of Embodiment] (1) The present embodiment is a substrate processing apparatus 10 that processes a substrate W having warpage, and the substrate processing apparatus 10 includes a plurality of conveyance rollers 31 that move the substrate W in a direction perpendicular to the conveyance direction Td of the substrate W. Two sets of two spaced apart in the width direction X are set as a set, and a plurality of sets are provided along the conveyance direction Td, and the substrates W are conveyed by supporting the concave surface S1 side and rotating about the axis; the first axis 31c will be in the width Two sets are provided at a distance in the direction X, and a plurality of sets are provided along the conveyance direction Td, and the conveyance rollers 31 and the fluid supply unit 40 are attached to supply the fluid to the concave surface S1 of the substrate W.

而且，流體供給部40從在寬度方向X上隔開的各組的搬送輥31之間向基板W的凹面S1供給流體。And the fluid supply part 40 supplies fluid to the concave surface S1 of the board|substrate W from between the conveyance rollers 31 of each group spaced apart in the width direction X.

假設在以下方為凸面S2的方式搬送基板W的情況下，會支撐凸面S2側的傾斜面，從而容易滑動而支撐不穩定，需要在下側追加支撐基板W的構件或機構等。另一方面，在本實施方式中，通過支撐凹面S1側，基本上僅支撐基板W的端部即可，因此可穩定地搬送。If the substrate W is conveyed with the convex surface S2 below, the inclined surface on the convex surface S2 side is supported, which is easy to slide and the support becomes unstable. On the other hand, in the present embodiment, by supporting the concave surface S1 side, basically only the end portion of the substrate W needs to be supported, so that stable conveyance is possible.

另外，假設遍及基板W的寬度方向X的整體而設置有軸，則從流體供給部40供給的流體會碰觸軸，或者產生到達不了基板W的部分，從而無法均勻地供給至基板W，妨礙基板W的有效率的處理。但是，本實施方式中，在凹面S1側，搬送輥31及第一軸31c在寬度方向X上隔開地設置，因此可防止從流體供給部40供給的流體被搬送輥31或第一軸31c阻擋。因此，可將流體均勻地噴到處理面，因此能夠實現均勻的處理，從而可抑制基板W的品質的下降。In addition, if the shaft is provided over the entire width direction X of the substrate W, the fluid supplied from the fluid supply unit 40 may touch the shaft, or a portion that does not reach the substrate W may occur, so that it cannot be uniformly supplied to the substrate W and hinders the Efficient processing of the substrate W. However, in the present embodiment, since the conveying roller 31 and the first shaft 31c are provided to be spaced apart in the width direction X on the concave surface S1 side, the fluid supplied from the fluid supply unit 40 can be prevented from being transported by the conveying roller 31 or the first shaft 31c block. Therefore, since the fluid can be uniformly sprayed onto the processing surface, uniform processing can be achieved, and deterioration of the quality of the substrate W can be suppressed.

進而，通過從各組的搬送輥31與第一軸31c之間向基板W的凹面S1供給流體，由於凹面S1的傾斜而形成從中央向端部的流動，因此可抑制凹面S1的處理變得不充分，從而可提高基板W的品質。Furthermore, by supplying the fluid to the concave surface S1 of the substrate W from between the conveyance rollers 31 of each set and the first shaft 31c, a flow from the center to the end portion is formed due to the inclination of the concave surface S1, so that the processing of the concave surface S1 can be suppressed from becoming worse. Insufficient, the quality of the substrate W can be improved.

（2）本實施方式包括按壓基板W的凸面S2的按壓輥32、以及與按壓輥32同軸地設置的第二軸32a。因此，即便從凹面S1側施加因處理液的供給而產生的壓力，也可通過按壓輥32防止浮起，因此基板W的位置穩定，從而可維持均勻的處理。(2) This embodiment includes the pressing roller 32 pressing the convex surface S2 of the substrate W, and the second shaft 32 a provided coaxially with the pressing roller 32 . Therefore, even if the pressure due to the supply of the processing liquid is applied from the concave surface S1 side, the pressing roller 32 can prevent floating, so that the position of the substrate W is stabilized, and uniform processing can be maintained.

（3）流體供給部40在寬度方向X上具有多個噴出部412，與配置於靠近各組的兩個搬送輥31的一側的噴出部412相比，配置於寬度方向X上的中央側的噴出部412的處理液的噴出量更多。因此，來自位於較凹面S1的端部側更靠中央側處的噴出部的處理液的噴出量更多，容易形成從中央向端部的流動，從而可使整體的處理均勻。例如，如圖2所示，在多個噴出部412設置於相同高度的情況下，中央的噴出部412B的噴出口由於與基板W的隔開距離比其他的噴出部412A、噴出部412C長，因此所噴出的處理液按噴出部412A、噴出部412B、噴出部412C分散，或處理液與基板W的凹面S1的中央碰撞的壓力變弱。在本實施方式中，通過使設置於凹面S1的中央的下方的噴出部412B的噴出量比其他噴出部412A、噴出部412C多，可確保中央的處理液的流量，而形成從中央向端部的流動。另外，也能夠使處理液與凹面S1碰撞的壓力均勻。(3) The fluid supply part 40 has a plurality of ejection parts 412 in the width direction X, and is arranged at the center side in the width direction X compared to the ejection parts 412 arranged on the side closer to the two conveyance rollers 31 of each group The discharge amount of the treatment liquid from the discharge unit 412 is larger. Therefore, the discharge amount of the treatment liquid from the discharge portion located on the center side of the concave surface S1 is larger, and the flow from the center to the end portion is easily formed, so that the overall treatment can be uniform. For example, as shown in FIG. 2 , when the plurality of ejection portions 412 are provided at the same height, the ejection port of the central ejection portion 412B has a longer distance from the substrate W than the other ejection portions 412A and 412C. Therefore, the ejected treatment liquid is dispersed by the ejection portion 412A, the ejection portion 412B, and the ejection portion 412C, or the pressure at which the treatment liquid collides with the center of the concave surface S1 of the substrate W becomes weak. In the present embodiment, the flow rate of the processing liquid in the center can be ensured by making the discharge amount of the discharge portion 412B provided below the center of the concave surface S1 larger than that of the other discharge portions 412A and 412C. flow. In addition, the pressure at which the processing liquid collides with the concave surface S1 can also be made uniform.

（4）流體供給部40在寬度方向X上具有多個噴出部412，多個噴出部412各別地可變地設置要噴出的處理液的流量。因此，根據由基板W的翹曲引起的凹面S1與各噴出部412的距離的差異，來調整各噴出部412的流量，由此能夠實現均勻的處理。(4) The fluid supply unit 40 has a plurality of ejection portions 412 in the width direction X, and the plurality of ejection portions 412 are individually set to variably set the flow rate of the processing liquid to be ejected. Therefore, by adjusting the flow rate of each ejection portion 412 according to the difference in the distance between the concave surface S1 and each ejection portion 412 caused by the warpage of the substrate W, uniform processing can be realized.

（5）流體供給部40具有在沿著搬送方向Td的方向上延伸的多個管411，多個管411在寬度方向X上排列地配置，噴出部412設置於管411。因此，通過調整各管411的處理液的流量，可調整來自沿著寬度方向X配置的多個噴出部412的處理液的噴出量。(5) The fluid supply unit 40 includes a plurality of tubes 411 extending in the direction along the conveyance direction Td, the plurality of tubes 411 are arranged in a row in the width direction X, and the ejection unit 412 is provided in the tubes 411 . Therefore, by adjusting the flow rate of the processing liquid in each tube 411, the discharge amount of the processing liquid from the plurality of discharge parts 412 arranged along the width direction X can be adjusted.

[其他實施方式] （1）在搬送輥31未必需要設置凸緣狀部31b。例如，如圖4所示，也可在沿基板W的搬送方向Td排列的多個第一軸31c之間設置引導基板W的移動的導輥33。在此情況下，若將一對相向的導輥33的隔開距離設為e，則優選為設為e≧L。 [Other Embodiments] (1) It is not always necessary to provide the flange-shaped portion 31 b on the conveyance roller 31 . For example, as shown in FIG. 4 , guide rollers 33 that guide the movement of the substrate W may be provided between the plurality of first shafts 31 c arranged along the conveyance direction Td of the substrate W. As shown in FIG. In this case, if the separation distance of a pair of opposing guide rollers 33 is set to e, it is preferable to set it as e≧L.

（2）在所述形態中，按壓輥32在與搬送方向Td正交的寬度方向X上設為一個，但並不限於此，也可設置有多個。例如，在與各搬送輥31相向的位置，可各設置一個按壓輥32。也可將帶繞掛於按壓輥32，設為如輥式輸送機那樣。通過採用此種結構，與僅使用按壓輥32的情況相比，相對於基板W的翹曲而接觸的面積增加，因此可更穩定地搬送基板W。另外，也可設為扁平型（flat type）的輥。(2) In the above-described embodiment, one pressing roller 32 is provided in the width direction X orthogonal to the conveying direction Td, but the present invention is not limited to this, and a plurality of the pressing rollers 32 may be provided. For example, one pressing roller 32 may be provided at a position facing each conveying roller 31 . The belt may be wound around the pressing roller 32 as in a roller conveyor. By adopting such a structure, compared with the case where only the pressing roller 32 is used, the contact area with respect to the warpage of the board|substrate W increases, and therefore the board|substrate W can be conveyed more stably. In addition, a flat type roll may be used.

（3）也可設置測定基板W的翹曲量的測定部，根據由測定部測定的基板W的翹曲量，來調整來自噴出部412的噴出量。例如，在由測定部測定的基板W的翹曲量比規定值大的情況下，也可增多來自中央的噴出部412B的噴出量。(3) A measurement unit for measuring the warpage amount of the substrate W may be provided, and the discharge amount from the discharge unit 412 may be adjusted based on the warpage amount of the substrate W measured by the measurement unit. For example, when the warpage amount of the substrate W measured by the measuring unit is larger than a predetermined value, the discharge amount from the central discharge unit 412B may be increased.

（4）也可設置測定基板W的翹曲量的測定部、使各按壓輥32升降的移動機構，根據由測定部測定的基板W的翹曲量，來調整各組的搬送輥31及按壓輥32的隔開距離。(4) A measurement unit for measuring the warpage amount of the substrate W and a moving mechanism for raising and lowering each pressing roller 32 may be provided, and the conveying rollers 31 and the pressing force of each group may be adjusted according to the warpage amount of the substrate W measured by the measurement unit. The separation distance of the rollers 32 .

（5）在所述形態中，例示了在共同的室內進行清洗處理與乾燥處理，但並不限於此。也可在不同的室內進行清洗處理與乾燥處理。(5) In the above embodiment, the cleaning process and the drying process are performed in a common room as an example, but the present invention is not limited to this. Cleaning and drying can also be performed in different rooms.

（6）在所述形態中，多個噴出部412設定為與靠近各組的兩個搬送輥31的一側相比，遠離各組的兩個搬送輥31的一側的處理液的每單位時間的噴出量更多。此時，在各噴出部412的噴出孔的直徑相等的情況下，與靠近各組的兩個搬送輥31的一側相比，遠離各組的兩個搬送輥31的一側的噴出部中的處理液的噴出速度更快即可。(6) In the above-described form, the plurality of ejection portions 412 are set so that each unit of the treatment liquid is located on the side farther from the two transfer rollers 31 in each group than on the side closer to the two transfer rollers 31 in each group. The amount of time ejected is more. At this time, when the diameters of the ejection holes of the ejection portions 412 are equal, the ejection portion on the side farther from the two conveyance rollers 31 of each group than the side closer to the two conveyance rollers 31 of each group is in the ejection portion. The discharge speed of the treatment liquid can be faster.

（7）在所述形態中，管411設為管411A、管411B、管411C此三個，但並不限於三個，也可設置三個以上。此時，也可僅中央側的一個相較於除此以外而噴出量多，也可從靠近搬送輥31的一側向中央階段性地噴出量變多。(7) In the above-described embodiment, the tubes 411 are three of the tubes 411A, 411B, and 411C, but it is not limited to three, and three or more may be provided. At this time, only one of the center side may have a larger discharge amount than the others, or the discharge amount may be increased stepwise from the side closer to the conveyance roller 31 toward the center.

（8）作為流體供給部40，除了所述的呈噴淋狀地噴出處理液的噴嘴、氣刀以外，也可為水刀（aqua knife）等，而且，只要是噴出流體的工具，則所使用的工具並無特別限定。進而，也可將所述的多種工具組合使用。另外，流體供給部40也可設置於基板W的搬送路徑T的上方，對基板W的凸面S2（未形成有圖案P的非圖案形成面）供給處理用的流體，由此對基板W的兩面進行處理。(8) The fluid supply unit 40 may be a water knife (aqua knife) or the like, in addition to the above-described nozzles and air knives that eject the treatment liquid in a shower shape, and any tool that ejects fluid may be used. The tools used are not particularly limited. Furthermore, it is also possible to use the various tools described above in combination. In addition, the fluid supply unit 40 may be provided above the conveyance path T of the substrate W, and supply the processing fluid to the convex surface S2 of the substrate W (the non-patterned surface on which the pattern P is not formed), thereby supplying the fluid for processing to both surfaces of the substrate W to be processed.

（9）在所述形態中，作為基板處理裝置10的處理，例示了對基板W進行清洗、乾燥的處理，但處理並不限於此。為了製造液晶基板或半導體基板、光罩等，例如也可使用抗蝕劑處理裝置、曝光處理裝置、顯影處理裝置、蝕刻處理裝置、剝離處理裝置。與此相應地，作為處理液，可使用各種藥液。(9) In the above embodiment, the processing of washing and drying the substrate W was exemplified as the processing of the substrate processing apparatus 10 , but the processing is not limited to this. In order to manufacture a liquid crystal substrate, a semiconductor substrate, a photomask, etc., for example, a resist processing apparatus, an exposure processing apparatus, a developing processing apparatus, an etching processing apparatus, and a peeling processing apparatus can be used. Accordingly, as the treatment liquid, various chemical liquids can be used.

（10）在所述形態中，例示了以水平狀態來搬送基板W的情況，但並不限於此，也可使基板W傾斜而以傾斜狀態來搬送，例如也可使基板W的寬度方向X的一端高於另一端而傾斜地搬送基板W。(10) In the above embodiment, the case where the substrate W is conveyed in a horizontal state is exemplified, but the present invention is not limited to this. The substrate W may be inclined and conveyed in an inclined state, for example, the width direction X of the substrate W may be One end is higher than the other end, and the substrate W is conveyed obliquely.

（11）在所述形態中，以四周存在翹曲的基板W（四周具有翹曲的基板W）為對象進行了說明，但並不限於此，例如即便是在矩形的任意兩邊、三邊存在翹曲的基板，也能夠適用本發明。(11) In the above-mentioned form, the substrate W having warpage on all sides (substrate W having warp on all sides) has been described as an object, but it is not limited to this. The present invention can also be applied to warped substrates.

（12）以上，對本發明的若干實施方式進行了說明，但這些實施方式是作為例子而提示，並不意圖限定發明的範圍。這些新穎的實施方式能夠以其他的各種形態來實施，在不脫離發明主旨的範圍內可進行各種省略、替換、變更。這些實施方式或其變形包含在發明的範圍或主旨內，並且包含在發明申請專利範圍所記載的發明及其均等的範圍內。(12) Several embodiments of the present invention have been described above, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments or modifications thereof are included in the scope and spirit of the invention, and are included in the inventions described in the scope of the invention and their equivalents.

10:基板處理裝置 21:處理室 30:基板搬送裝置 31:搬送輥 31a:圓柱部 31b:凸緣狀部 31c:第一軸 32:按壓輥 32a:第二軸 33:導輥 40:流體供給部 41:液體噴射部 42:氣體吹出部 42a:吹出口 50:控制部 411、411A、411B、411C:管 412、412A、412B、412C:噴出部 a:軸心 ax、L、Lp:長度 D、e、H:隔開距離 d:隔開距離（相向面間的距離） P:圖案 S1:凹面 S2:凸面 T:搬送路徑 Td:搬送方向 W:基板 X:寬度方向 10: Substrate processing device 21: Processing room 30: Substrate transfer device 31: Conveying rollers 31a: Cylindrical part 31b: Flange 31c: First axis 32: Press Roller 32a: Second axis 33: Guide roller 40: Fluid supply part 41: Liquid injection part 42: Gas blowing part 42a: Blow Out 50: Control Department 411, 411A, 411B, 411C: Tube 412, 412A, 412B, 412C: ejection part a: axis ax, L, Lp: length D, e, H: separation distance d: separation distance (distance between opposite faces) P: pattern S1: Concave S2: Convex T: conveying path Td: conveying direction W: substrate X: width direction

圖1是表示實施方式的基板處理裝置的概略結構的側視圖。 圖2是圖1的向視A-A'圖。 圖3是表示圖1的實施方式的基板處理裝置的概略結構的平面圖。 圖4是表示另一實施方式的基板處理裝置的概略結構的平面圖。 FIG. 1 is a side view showing a schematic configuration of a substrate processing apparatus according to an embodiment. FIG. 2 is an arrow AA' view of FIG. 1 . FIG. 3 is a plan view showing a schematic configuration of the substrate processing apparatus according to the embodiment of FIG. 1 . 4 is a plan view showing a schematic configuration of a substrate processing apparatus according to another embodiment.

10:基板處理裝置 10: Substrate processing device

21:處理室 21: Processing room

30:基板搬送裝置 30: Substrate transfer device

31:搬送輥 31: Conveying rollers

31a:圓柱部 31a: Cylindrical part

31b:凸緣狀部 31b: Flange

31c:第一軸 31c: First axis

32:按壓輥 32: Press Roller

32a:第二軸 32a: Second axis

40:流體供給部 40: Fluid supply part

41:液體噴射部 41: Liquid injection part

42:氣體吹出部 42: Gas blowing part

42a:吹出口 42a: Blow Out

50:控制部 50: Control Department

411:管 411: Tube

412:噴出部 412: Ejection Department

H:隔開距離 H: separated by distance

T:搬送路徑 T: conveying path

Td:搬送方向 Td: conveying direction

W:基板 W: substrate

Claims (7)

一種基板處理裝置，處理具有翹曲的基板，且所述基板處理裝置包括： 搬送輥，將在與所述基板的搬送方向正交的寬度方向上隔開地設置的兩個作為一組，沿著所述基板的搬送方向設置有多組，支撐所述基板的凹面側來搬送所述基板； 第一軸，將在所述寬度方向上隔開地設置的兩根作為一組，沿著所述基板的搬送方向設置有多組，安裝有所述搬送輥；以及 流體供給部，向所述基板的凹面供給流體， 所述流體供給部從在所述寬度方向上隔開的所述搬送輥之間向所述基板的凹面供給流體。 A substrate processing apparatus for processing a substrate having warpage, and the substrate processing apparatus includes: Two sets of conveying rollers are provided at a distance in the width direction perpendicular to the conveying direction of the substrate as a set, and a plurality of sets are provided along the conveying direction of the substrate to support the concave surface side of the substrate. conveying the substrate; The first shaft is provided in a plurality of sets along the conveyance direction of the substrate, with two sets spaced apart in the width direction as a set, and the conveyance rollers are attached; and a fluid supply unit for supplying fluid to the concave surface of the substrate, The fluid supply unit supplies fluid to the concave surface of the substrate from between the conveyance rollers spaced apart in the width direction. 如請求項1所述的基板處理裝置，其中，所述基板的所述凹面具有形成有圖案的圖案形成區域、以及位於所述圖案形成區域的外周的未形成有圖案的非圖案形成區域， 在所述寬度方向上，各組的所述搬送輥的隔開距離比所述圖案形成區域的寬度長。 The substrate processing apparatus according to claim 1, wherein the concave surface of the substrate has a pattern forming area on which a pattern is formed, and a non-pattern forming area on the outer periphery of the pattern forming area, which is not formed with a pattern, In the width direction, the distance between the conveying rollers of each group is longer than the width of the pattern forming region. 如請求項1或請求項2所述的基板處理裝置，其特徵在於，包括： 按壓輥，按壓所述基板的凸面；以及 第二軸，安裝有所述按壓輥。 The substrate processing apparatus according to claim 1 or claim 2, characterized in that it includes: a pressing roller pressing the convex surface of the substrate; and The second shaft is attached with the pressing roller. 如請求項3所述的基板處理裝置，其特徵在於，所述按壓輥以隔著所述基板的搬送路徑而隔開地與所述搬送輥的組分別相向的方式配置， 與所述搬送路徑垂直的方向上的所述搬送輥與所述按壓輥的隔開距離在所述搬送輥的各組之間一定。 The substrate processing apparatus according to claim 3, wherein the pressing rollers are arranged so as to face the groups of the conveying rollers at a distance from each other across the conveyance path of the substrates, The distance between the conveyance roller and the pressing roller in the direction perpendicular to the conveyance path is constant between the groups of the conveyance rollers. 如請求項1至請求項4中任一項所述的基板處理裝置，其特徵在於，所述流體供給部在所述寬度方向上具有多個噴出部， 多個所述噴出部各別地可變地設置要噴出的處理液的流量。 The substrate processing apparatus according to any one of claim 1 to claim 4, wherein the fluid supply portion has a plurality of ejection portions in the width direction, Each of the plurality of ejection portions is configured to variably set the flow rate of the treatment liquid to be ejected. 如請求項1至請求項5中任一項所述的基板處理裝置，其特徵在於，所述流體供給部在所述寬度方向上具有多個噴出部， 與配置於靠近各組的兩個所述搬送輥的一側的所述噴出部相比，配置於所述寬度方向上的中央側的所述噴出部的處理液的噴出量更多。 The substrate processing apparatus according to any one of claim 1 to claim 5, wherein the fluid supply portion has a plurality of ejection portions in the width direction, The ejection portion disposed on the center side in the width direction has a larger amount of treatment liquid ejected than the ejection portion disposed on one side closer to the two conveyance rollers of each group. 如請求項5或請求項6所述的基板處理裝置，其特徵在於，所述流體供給部具有在沿著所述搬送方向的方向上延伸的多個管， 多個所述管在所述寬度方向上排列地配置， 所述噴出部設置於所述管， 通過調整在所述管中流動的所述處理液的流量，增多從所述噴出部噴出的所述處理液的流量。 The substrate processing apparatus according to claim 5 or claim 6, wherein the fluid supply unit has a plurality of tubes extending in a direction along the conveying direction, A plurality of the tubes are arranged in a row in the width direction, The ejection part is provided on the pipe, By adjusting the flow rate of the treatment liquid flowing in the pipe, the flow rate of the treatment liquid ejected from the ejection portion is increased.
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