JP2022119534A - Substrate processing device - Google Patents

Substrate processing device Download PDF

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JP2022119534A
JP2022119534A JP2021016741A JP2021016741A JP2022119534A JP 2022119534 A JP2022119534 A JP 2022119534A JP 2021016741 A JP2021016741 A JP 2021016741A JP 2021016741 A JP2021016741 A JP 2021016741A JP 2022119534 A JP2022119534 A JP 2022119534A
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Prior art keywords
substrate
width direction
conveying
transport
rollers
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JP2021016741A
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JP7324788B2 (en
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幸伸 西部
Yukinobu Nishibe
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Priority to JP2021016741A priority Critical patent/JP7324788B2/en
Priority to KR1020220006573A priority patent/KR102638100B1/en
Priority to CN202210096669.XA priority patent/CN114864436A/en
Priority to TW111103491A priority patent/TWI788210B/en
Publication of JP2022119534A publication Critical patent/JP2022119534A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • B05C11/1015Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to a conditions of ambient medium or target, e.g. humidity, temperature ; responsive to position or movement of the coating head relative to the target
    • B05C11/1018Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to a conditions of ambient medium or target, e.g. humidity, temperature ; responsive to position or movement of the coating head relative to the target responsive to distance of target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1044Apparatus or installations for supplying liquid or other fluent material to several applying apparatus or several dispensing outlets, e.g. to several extrusion nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G13/00Roller-ways
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G39/00Rollers, e.g. drive rollers, or arrangements thereof incorporated in roller-ways or other types of mechanical conveyors 
    • B65G39/02Adaptations of individual rollers and supports therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/061Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2201/00Indexing codes relating to handling devices, e.g. conveyors, characterised by the type of product or load being conveyed or handled
    • B65G2201/02Articles
    • B65G2201/0214Articles of special size, shape or weigh
    • B65G2201/022Flat

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Paper (AREA)

Abstract

To provide a substrate processing device that can improve a quality of a substrate.SOLUTION: A substrate processing device 30 according to an embodiment, which conveys a substrate W having warpage, comprises: a plurality of conveying rollers 31 that convey the substrate W by rotating with shafts thereof as centers while supporting a concave side of the substrate W; first shafts 31c provided concentrically with the conveying rollers 31; and a fluid supply part 40 that supplies fluid to the concave side of the substrate W. Shafts of the conveying rollers 31 are pointed in a width direction orthogonal to a conveying direction Td of the substrate W, and a plurality of sets of the conveying rollers 31, constituted of the two conveying rollers separately provided in the width direction as one set are arranged in the conveying direction Td. The two conveying rollers 31 of each set are provided with two first shafts 31c separated in the width direction. The fluid supply part 40 supplies fluid from a space between the separated conveying rollers of each set to the concave surface of the substrate.SELECTED DRAWING: Figure 1

Description

本発明の実施形態は、基板処理装置に関する。 An embodiment of the present invention relates to a substrate processing apparatus.

液晶表示装置や半導体デバイスなどの製造工程において、ガラス基板や半導体基板などの基板を処理する基板処理装置が用いられている。基板処理としては、例えば、レジスト塗布処理、レジスト剥離処理、エッチング処理、洗浄処理、乾燥処理がある。基板処理装置は、複数の搬送ローラにより基板を搬送しながら、その基板に対して、供給ツールによって、例えば、処理液や乾燥用の気体のような処理用の流体を供給して基板を処理する。 2. Description of the Related Art Substrate processing apparatuses for processing substrates such as glass substrates and semiconductor substrates are used in manufacturing processes for liquid crystal display devices, semiconductor devices, and the like. Substrate processing includes, for example, resist coating processing, resist stripping processing, etching processing, cleaning processing, and drying processing. A substrate processing apparatus processes a substrate by supplying a processing fluid such as a processing liquid or a drying gas to the substrate from a supply tool while transporting the substrate by a plurality of transport rollers. .

特開平11-10096号公報JP-A-11-10096

搬送対象となる基板は、通常は平板状の基板であるが、中には反りを有する基板もある。例えば、厚さが1mm程度と薄い基板が処理対象の基板として用いられ、その基板の一方の面に成膜が行われると、基板は膜の応力により反る。このため、基板の一方の面が凹面、他方の面が凸面となる場合がある。このように反りを有する基板が、凹面を上にして、複数の搬送ローラによって反ったままの状態で搬送されると、供給ツールからの処理用の流体が凹面の中央部に滞留してしまい、基板に対する処理が不十分あるいは不均一となる。このため、例えば、塗布ムラ、剥離ムラ、エッチングムラ、洗浄ムラ、乾燥ムラなどの処理ムラが発生することがあり、基板の品質が低下する。 Substrates to be transported are usually flat substrates, but some substrates have warpage. For example, when a thin substrate with a thickness of about 1 mm is used as a substrate to be processed and a film is formed on one surface of the substrate, the substrate warps due to the stress of the film. Therefore, one surface of the substrate may be concave and the other surface may be convex. When such a warped substrate is conveyed with its concave surface facing up and in a warped state by a plurality of conveying rollers, the processing fluid from the supply tool accumulates in the central portion of the concave surface. Poor or non-uniform treatment of the substrate. For this reason, uneven processing such as uneven coating, uneven peeling, uneven etching, uneven cleaning, and uneven drying may occur, and the quality of the substrate deteriorates.

本発明が解決しようとする課題は、基板の品質を向上させることができる基板処理装置を提供することにある。 An object of the present invention is to provide a substrate processing apparatus capable of improving the quality of substrates.

本発明の実施形態は、反りを有する基板を処理する基板処理装置であって、前記基板の凹面側を支持し、軸を中心に回転することにより、前記基板を搬送する複数の搬送ローラと、前記搬送ローラと同軸に設けられた第1のシャフトと、前記基板の凹面に流体を供給する流体供給部と、を備え、前記搬送ローラの軸は、前記基板の搬送方向に直交する幅方向であり、前記搬送ローラは、前記幅方向に離間して設けられた2個を1組として、複数組が前記搬送方向に配置され、各組の2個の前記搬送ローラには、前記幅方向に離間した2本の前記第1のシャフトが設けられ、前記流体供給部は、離間した各組の前記搬送ローラの間から、前記基板の凹面に流体を供給する。 An embodiment of the present invention is a substrate processing apparatus for processing a warped substrate, comprising: a plurality of transport rollers supporting a concave surface side of the substrate and rotating about an axis to transport the substrate; a first shaft provided coaxially with the transport roller; and a fluid supply unit that supplies a fluid to the concave surface of the substrate. and a plurality of sets of the conveying rollers are arranged in the conveying direction, each set including two conveying rollers spaced apart in the width direction. Two spaced-apart first shafts are provided, and the fluid supply unit supplies fluid to the concave surface of the substrate from between each set of the spaced-apart transport rollers.

本発明の実施形態によれば、基板の品質を向上させることができる。 According to embodiments of the present invention, the quality of substrates can be improved.

実施形態に係る基板処理装置の概略構成を示す側面図である。1 is a side view showing a schematic configuration of a substrate processing apparatus according to an embodiment; FIG. 図1の矢視A-A´図である。2 is a view taken along arrow AA' in FIG. 1; FIG. 図1の実施形態の基板処理装置の概略構成を示す平面図である。2 is a plan view showing a schematic configuration of the substrate processing apparatus of the embodiment of FIG. 1; FIG. 他の実施形態の基板処理装置の概略構成を示す平面図である。It is a top view which shows schematic structure of the substrate processing apparatus of other embodiment.

図1~図4を参照して、実施形態の基板処理装置10を説明する。なお、図面の寸法及び形状は実際の基板及び装置を反映した正確なものではなく、理解を容易にするために、誇張して表現している部分が存在する。また、以下の説明では、重力に従う方向を「下方」、重力に抗する方向を「上方」とするが、これらの方向は装置の設置方向を限定するものではない。 A substrate processing apparatus 10 according to an embodiment will be described with reference to FIGS. 1 to 4. FIG. Note that the dimensions and shapes of the drawings do not accurately reflect the actual substrate and device, and some parts are exaggerated for easy understanding. Further, in the following description, the direction following gravity is defined as "downward" and the direction against gravity is defined as "upper", but these directions do not limit the installation direction of the device.

[基板]
図1及び図2に示すように、本実施形態において、搬送対象、処理対象となる基板Wは反りを有する。基板Wとしては、例えば、ガラス基板などの矩形状の薄型基板が用いられる。本実施形態において、基板Wの厚さは、0.5~1.1mm程度であり、基板Wの反り量は7~10mm程度である。図では、基板Wの短手方向がU字形に沿った形状を示しているが、実際の矩形状の基板Wの反りは、基板Wの四方にある。反りにより基板Wの一方の面が収縮し、他方の面が伸張する。収縮することにより窪んだ面を凹面S1、伸張することにより隆起した面を凸面S2とする。本実施形態の基板Wは、凹面S1を処理面とする。例えば、多層基板のように、処理面に回路のパターンPが形成されている基板Wを用いる。なお、基板Wの処理面の外縁付近には、パターンPが形成されていない領域が存在する。処理面のパターンPが形成された領域を「パターン形成領域」、パターンPが形成されていない領域を「非パターン形成領域」とする。
[substrate]
As shown in FIGS. 1 and 2, in this embodiment, the substrate W to be transported or processed has a warp. As the substrate W, for example, a rectangular thin substrate such as a glass substrate is used. In this embodiment, the thickness of the substrate W is approximately 0.5 to 1.1 mm, and the amount of warpage of the substrate W is approximately 7 to 10 mm. In the drawing, the substrate W has a U-shaped shape in the lateral direction, but the actual rectangular substrate W is warped in its four directions. The warpage causes one surface of the substrate W to contract and the other surface to expand. A concave surface S1 is a surface that is depressed by contraction, and a convex surface S2 is a surface that is raised by stretching. The substrate W of the present embodiment has the concave surface S1 as the processing surface. For example, a substrate W having a circuit pattern P formed on its surface to be processed, such as a multilayer substrate, is used. It should be noted that there is a region in which the pattern P is not formed near the outer edge of the processing surface of the substrate W. As shown in FIG. A region of the processing surface where the pattern P is formed is referred to as a "pattern forming region", and a region where the pattern P is not formed is referred to as a "non-pattern forming region".

[基本構成]
本実施形態の基板処理装置10は、基板Wを、凹面S1側を支持して搬送しながら、処理面である凹面S1を処理する装置である。このように、凹面S1が下方、凸面S2が上方となるように搬送すると、基本的には基板Wの端部のみの支持だけで、安定して搬送できる。そして、基板処理装置10は、下の凹面S1に対して処理を行う。この基板処理装置10は、処理室21、基板搬送装置30、流体供給部40、制御部50を有する。処理室21は、基板Wが搬送される搬送路Tを内部に有する筐体であり、基板Wが搬送路Tに沿って内部を通過することが可能に形成されている。処理室21は、搬送路Tを移動する基板Wを処理するための部屋として機能する。基板Wの処理は、本実施形態では、洗浄と乾燥である。処理室21の底面には、処理液を排出する排出口(図示せず)が形成されている。
[Basic configuration]
The substrate processing apparatus 10 of the present embodiment is an apparatus that processes the concave surface S1, which is the surface to be processed, while supporting and transporting the substrate W on the concave surface S1 side. In this manner, when the substrate W is transported so that the concave surface S1 is downward and the convex surface S2 is upward, basically the substrate W can be stably transported only by supporting the end portion thereof. Then, the substrate processing apparatus 10 processes the lower concave surface S1. This substrate processing apparatus 10 has a processing chamber 21 , a substrate transfer device 30 , a fluid supply section 40 and a control section 50 . The processing chamber 21 is a housing having therein a transport path T along which the substrate W is transported, and is formed so that the substrate W can pass through the interior along the transport path T. As shown in FIG. The processing chamber 21 functions as a room for processing the substrates W moving on the transport path T. As shown in FIG. The processing of the substrate W is cleaning and drying in this embodiment. A discharge port (not shown) for discharging the processing liquid is formed in the bottom surface of the processing chamber 21 .

基板搬送装置30は、複数の搬送ローラ31と、複数の押えローラ32とを有する。基板搬送装置30は、処理室21の全内部に亘って設けられ、各押えローラ32により基板Wの凸面S2を押えつつ、各搬送ローラ31により凹面S1側を支持して基板Wを搬送する。 The substrate conveying device 30 has a plurality of conveying rollers 31 and a plurality of pressing rollers 32 . The substrate conveying device 30 is provided throughout the processing chamber 21 and conveys the substrate W while pressing the convex surface S2 of the substrate W with the pressing rollers 32 and supporting the concave surface S1 with the conveying rollers 31 .

[基板搬送装置]
(搬送ローラと押えローラの配置)
基板搬送装置30は、上記のように、凹面S1を下方にして基板Wを搬送する。各搬送ローラ31は、基板Wの搬送方向Tdに沿って搬送路Tの下方に所定間隔で並べられている。各押えローラ32は、それぞれ、各搬送ローラ31に搬送路Tを挟んで離間するように、搬送路Tの上方に位置付けられ、各搬送ローラ31の所定間隔と同じ所定間隔で搬送方向Tdに沿って並べられている。これらの搬送ローラ31及び押えローラ32は、処理室21内において、図1における上下方向に対向するように配置され、それぞれ回転可能に設けられており、駆動機構(図示せず)により互いに同期して回転するように構成されている。搬送ローラ31は、図1において時計回りに回転し、押えローラ32は反時計回りに回転する。
[Substrate transfer device]
(Arrangement of transport rollers and presser rollers)
As described above, the substrate transport device 30 transports the substrate W with the concave surface S1 facing downward. The transport rollers 31 are arranged below the transport path T along the transport direction Td of the substrate W at predetermined intervals. Each pressing roller 32 is positioned above the transport path T so as to be separated from each transport roller 31 with the transport path T interposed therebetween. are lined up. The conveying roller 31 and the pressing roller 32 are arranged in the processing chamber 21 so as to face each other in the vertical direction in FIG. It is configured to rotate The conveying roller 31 rotates clockwise in FIG. 1, and the pressing roller 32 rotates counterclockwise.

処理室21内には、搬送路Tを挟んで離間して対向するように配置された搬送ローラ31(本実施形態では2個で1組)と押えローラ32とを1組として、複数組が設けられ、処理室21内の組ごとの搬送ローラ31と押えローラ32との間の離間距離Hは、一定になっている。本実施形態において、離間距離Hは、例えば、鉛直方向の離間距離である。離間距離Hが一定になっているとは、例えば、基板Wの反り量以下の基板搬送可能な所定距離となっていることをいう。反り量とは、基板Wが載置された平面と、その平面に載置された基板Wの上面との最大鉛直離間距離である。 In the processing chamber 21, a plurality of sets are provided, each of which is made up of a set of a conveying roller 31 (two rollers in this embodiment) and a pressure roller 32, which are arranged to face each other with a gap between them with the conveying path T interposed therebetween. The separation distance H between the conveying roller 31 and the pressing roller 32 for each set in the processing chamber 21 is constant. In this embodiment, the separation distance H is, for example, a vertical separation distance. The fact that the separation distance H is constant means that the distance H is set to a predetermined distance at which the substrate can be transported in an amount equal to or less than the amount of warpage of the substrate W, for example. The amount of warp is the maximum vertical separation distance between the plane on which the substrate W is placed and the upper surface of the substrate W placed on the plane.

(搬送ローラの具体的構成)
搬送ローラ31は、図2に示すように、基板Wの凹面S1側を支持し、基板Wの搬送方向Tdに水平面内で直交する軸心aを回転軸として回転することにより、基板Wを搬送する。搬送ローラ31は、同一軸心a上に位置する円柱部31aと鍔状部31bを有する。円柱部31aは、基板Wの凹面S1側の端部に接して基板Wを支持する。円柱部31aは、例えば、ゴムや樹脂を素材とするローラである。円柱部31aの軸は、搬送方向Tdに直交する幅方向Xである。この円柱部31aを含む搬送ローラ31は、幅方向Xに離間して設けられた2個を1組として、複数組が搬送方向Tdに配置されている。各組の2個の円柱部31aは、同径である。
(Specific Configuration of Conveying Roller)
As shown in FIG. 2, the transport roller 31 supports the concave surface S1 side of the substrate W, and transports the substrate W by rotating about an axis a perpendicular to the transport direction Td of the substrate W in the horizontal plane. do. The conveying roller 31 has a cylindrical portion 31a and a flange portion 31b which are coaxially positioned on the same axis a. The cylindrical portion 31a supports the substrate W in contact with the end portion of the substrate W on the side of the concave surface S1. The cylindrical portion 31a is a roller made of rubber or resin, for example. The axis of the cylindrical portion 31a is the width direction X orthogonal to the transport direction Td. A plurality of sets of the conveying rollers 31 including the cylindrical portion 31a are arranged in the conveying direction Td, with two rollers spaced apart in the width direction X forming one set. The two cylindrical portions 31a of each set have the same diameter.

なお、上記の搬送ローラ31と押えローラ32との離間距離Hは、基板Wに接する部分の距離であり、本実施形態では、円柱部31aの外周面と押えローラ32の外周面との距離である。つまり、搬送ローラ31と押えローラ32との離間距離Hは、搬送ローラ31の一部と押えローラ32との距離である場合を含む。また、本実施形態の搬送路Tは、搬送ローラ31の円柱部31aと押えローラ32との間に位置する。 The separation distance H between the conveying roller 31 and the pressing roller 32 is the distance of the portion in contact with the substrate W. be. That is, the separation distance H between the conveying roller 31 and the pressing roller 32 includes the case where it is the distance between a part of the conveying roller 31 and the pressing roller 32 . Further, the conveying path T of the present embodiment is located between the cylindrical portion 31 a of the conveying roller 31 and the pressing roller 32 .

鍔状部31bは、2個の搬送ローラ31における円柱部31aの相反する端部に、径が大きくなるように設けられた部分である。鍔状部31bは、基板Wの搬送方向Tdに沿う端部に当接可能である。 The brim-shaped portions 31b are portions provided at opposite ends of the columnar portions 31a of the two conveying rollers 31 so as to have a larger diameter. The brim portion 31b can come into contact with the end portion of the substrate W along the transport direction Td.

なお、図3に示すように、組ごとの搬送ローラ31同士の離間距離D(各組の円柱部31a同士の対向面間の距離)は一定とする。この離間距離Dは、反りを有する基板Wの平面視における幅方向Xの長さをLとすると、D≦Lとすることが好ましい。また、各組の搬送ローラ31の鍔状部31bの離間距離(対向面間の距離)をdとすると、d≧Lとすることが好ましい。これにより、搬送ローラ31による基板Wの端部の支持が可能となる。さらに、図2に示すように、基板Wの平面視におけるパターン形成領域の幅方向Xの長さをLpとすると、D>Lpとすることが好ましい。これにより、後述する流体供給部40により供給される流体のパターンPへの供給が、搬送ローラ31により遮られることが抑制される。なお、円柱部31aの軸方向の長さaxは、(d-D)/2である。 As shown in FIG. 3, the separation distance D between the conveying rollers 31 in each set (the distance between the facing surfaces of the cylindrical portions 31a in each set) is constant. It is preferable that the separation distance D satisfies D≦L, where L is the length in the width direction X of the warped substrate W in plan view. In addition, it is preferable that d≧L, where d is the distance between the flange portions 31b of the conveying rollers 31 of each pair (the distance between the facing surfaces). As a result, the edge of the substrate W can be supported by the transport rollers 31 . Furthermore, as shown in FIG. 2, it is preferable that D>Lp, where Lp is the length in the width direction X of the pattern formation region in plan view of the substrate W. This suppresses the supply of the fluid to the pattern P by the fluid supply unit 40 , which will be described later, from being interrupted by the transport roller 31 . The axial length ax of the cylindrical portion 31a is (d−D)/2.

さらに、搬送ローラ31には、これと同軸に第1のシャフト31cが設けられている。各組の2個の搬送ローラ31に、2本の第1のシャフト31cがそれぞれ、幅方向Xに離間してかつ互いに同軸に設けられている。第1のシャフト31cは、円柱部31aよりも細い径であり、各組の2個の円柱部31aの互いに相反する端面に設けられている。複数の第1のシャフト31cは、例えば、図示しないヘリカルギヤ(はすば歯車)を有する駆動機構によって、同期して回転可能に設けられている。各組の2個の搬送ローラ31は、どちらも同じ周速で回転駆動される。 Further, the conveying roller 31 is provided with a first shaft 31c coaxially therewith. Two first shafts 31c are provided on the two conveying rollers 31 of each set, spaced apart in the width direction X and coaxially with each other. The first shaft 31c has a diameter smaller than that of the cylindrical portion 31a, and is provided on opposite end surfaces of the two cylindrical portions 31a of each set. The plurality of first shafts 31c are synchronously rotatable by, for example, a drive mechanism having a helical gear (not shown). Both of the two conveying rollers 31 of each set are rotationally driven at the same peripheral speed.

第1のシャフト31cが回転すると、その第1のシャフト31cに取り付けられた各円柱部31aは、第1のシャフト31cを回転の軸として回転する。搬送ローラ31は、凹面S1側の非パターン形成領域又は基板Wの搬送方向Tdに沿う端部を支持して、搬送方向Tdに搬送する。図2に示すように、搬送される基板Wにおける幅方向Xのパターン形成領域の下部には、第1のシャフト31cが無い状態となる。 When the first shaft 31c rotates, each cylindrical portion 31a attached to the first shaft 31c rotates around the first shaft 31c as a rotation axis. The transport rollers 31 support the non-pattern formation area on the concave surface S1 side or the end portion of the substrate W along the transport direction Td, and transport the substrate W in the transport direction Td. As shown in FIG. 2, there is no first shaft 31c below the pattern formation area in the width direction X of the substrate W being transported.

(押えローラの具体的構成)
押えローラ32は、幅方向Xを軸とする円形である。押えローラ32は、図2に示すように、各搬送ローラ31の上方であって、基板Wの凸面S2の中央に当接するように、各搬送ローラ31の上方であって、組となる2個の搬送ローラ31の間に存在する空間における幅方向Xの中央に対向して設けられている。押えローラ32には、第2のシャフト32aが同軸に設けられている。第2のシャフト32aは、第1のシャフト31cと平行に配置される。第2のシャフト32aは、押えローラ32よりも細い径であり、基板Wの幅方向Xの長さを超える長さに亘って、処理室21内に、例えば図示しないスパーギヤ(平歯車)を有する駆動機構によって、同期して回転可能に設けられている。
(Specific configuration of pressing roller)
The pressing roller 32 has a circular shape with the width direction X as an axis. As shown in FIG. 2, the pressing rollers 32 are located above the respective transport rollers 31 so as to abut on the center of the convex surface S2 of the substrate W and form a set of two pressing rollers 32 . is provided to face the center in the width direction X in the space existing between the conveying rollers 31 . The pressing roller 32 is coaxially provided with a second shaft 32a. The second shaft 32a is arranged parallel to the first shaft 31c. The second shaft 32a has a diameter smaller than that of the pressing roller 32, and has, for example, a spur gear (spur gear) (not shown) in the processing chamber 21 over a length exceeding the length of the substrate W in the width direction X. They are rotatably provided synchronously by a drive mechanism.

第2のシャフト32aが回転すると、その第2のシャフト32aに取り付けられた押えローラ32は、凸面S2に接しながら、第2のシャフト32aを回転軸として回転する。搬送ローラ31と押えローラ32は、どちらも同じ周速で回転駆動させられるように制御される。 When the second shaft 32a rotates, the pressing roller 32 attached to the second shaft 32a rotates around the second shaft 32a while contacting the convex surface S2. The conveying roller 31 and the pressing roller 32 are both controlled to rotate at the same peripheral speed.

[流体供給部]
図1及び図2に示すように、処理室21には、流体供給部40が設けられている。流体供給部40は、基板Wに対して、離間した各組の搬送ローラ31の間から流体を供給する。流体供給部40は、液噴射部41、気体吹出部42を有する。
[Fluid supply part]
As shown in FIGS. 1 and 2, the processing chamber 21 is provided with a fluid supply section 40 . The fluid supply unit 40 supplies fluid to the substrate W from between each pair of the transport rollers 31 that are separated from each other. The fluid supply unit 40 has a liquid injection unit 41 and a gas blowout unit 42 .

(液噴射部)
液噴射部41は、搬送路Tを移動する基板Wの処理面に、処理液を噴射して供給する。液噴射部41は、基板搬送装置30による基板Wの搬送を妨げないように、搬送される基板Wとは搬送路Tを挟んで離間して基板Wに対向するように設けられている。なお、液噴射部41と搬送路Tとの間には、シャフトやローラなどが介在していない。処理液が液噴射部41により搬送路Tに向けて噴射されると、搬送路Tを移動する基板Wの凹面S1に処理液が供給される。処理液には、目的の処理ごとに洗浄液、剥離液、現像液、リンス液(純水など)が適用される。
(liquid injection part)
The liquid injection unit 41 injects and supplies the processing liquid to the processing surface of the substrate W moving on the transport path T. As shown in FIG. The liquid injection part 41 is provided so as to face the substrate W while being separated from the substrate W to be transported across the transport path T so as not to interfere with the transport of the substrate W by the substrate transport device 30 . No shaft, roller, or the like is interposed between the liquid ejecting portion 41 and the transport path T. As shown in FIG. When the processing liquid is jetted toward the transport path T by the liquid jetting portion 41, the processing liquid is supplied to the concave surface S1 of the substrate W moving in the transport path T. As shown in FIG. As the processing liquid, cleaning liquid, stripping liquid, developing liquid, and rinsing liquid (pure water, etc.) are applied for each intended processing.

より具体的には、液噴射部41としては、例えば、複数の貫通孔を有するシャワーパイプや複数のノズルを備えるパイプを用いることができる。本実施形態の液噴射部41は、図1及び図2に示すように、搬送方向Tdに沿う方向に延びたパイプ411を有し、複数のパイプ411が幅方向Xに並べて配置されることにより構成されている。本実施形態では、図2に示すように、幅方向Xにおいて離間して設けられた2個の搬送ローラ31に近い位置にそれぞれ1つずつパイプ411A、411Cが配置され、2個の搬送ローラ31の間の幅方向Xの中央に1つ、パイプ411Bが配置されている。以下、パイプ411A、411B、411Cを区別しない場合には、パイプ411として説明する。パイプ411には、図示しないポンプ及びタンクを含む処理液の供給源が接続されている。 More specifically, for example, a shower pipe having a plurality of through holes or a pipe having a plurality of nozzles can be used as the liquid injection part 41 . As shown in FIGS. 1 and 2, the liquid injection section 41 of the present embodiment has a pipe 411 extending in the transport direction Td. It is configured. In this embodiment, as shown in FIG. 2, pipes 411A and 411C are arranged at positions near two conveying rollers 31 spaced apart in the width direction X, and the two conveying rollers 31 One pipe 411B is arranged at the center in the width direction X between. Hereinafter, the pipes 411A, 411B, and 411C will be referred to as the pipe 411 when not distinguished. The pipe 411 is connected to a processing liquid supply source including a pump and a tank (not shown).

パイプ411には、複数の吐出部412が設けられている。吐出部412は、本実施形態では、搬送される基板Wの処理面に、吐出口からシャワー状に処理液を供給するノズルである。つまり、吐出部412は、基板Wの下方から、基板Wの下面に対して処理液を吐出する。吐出部412は、貫通孔であってもよい。各パイプ411A、411B、411Cに設けられた吐出部412を、412A、412B、412Cとし、これらを区別しない場合には、吐出部412として説明する。 The pipe 411 is provided with a plurality of discharge portions 412 . In this embodiment, the ejection part 412 is a nozzle that supplies the processing liquid in a shower form from an ejection port onto the processing surface of the substrate W being transported. That is, the ejection part 412 ejects the processing liquid onto the lower surface of the substrate W from below the substrate W. As shown in FIG. The discharge part 412 may be a through hole. The discharge portions 412 provided in the respective pipes 411A, 411B, and 411C are referred to as 412A, 412B, and 412C.

幅方向Xに沿って配置された複数の吐出部412は、各組の2個の搬送ローラ31に近い側、つまり幅方向Xの両端側に位置する吐出部412よりも、各組の2個の搬送ローラ31から遠い側、つまり幅方向Xの中央側に位置する吐出部412の方が、処理液の単位時間当たりの吐出量(以下単に「吐出量」ということがある。)が多くなるように設定されている。本実施形態では、吐出部412A、412Cの吐出量よりも、吐出部412Bの吐出量が多い。このような吐出量とするために、幅方向Xに沿って配置された複数の吐出部412は、吐出する処理液の単位時間当たりの流量を、個別に可変に設けられている。より具体的には、制御部50が、パイプ411に接続された配管に設けられたバルブ(図示せず)を制御することにより各パイプ411を流れる処理液の量が調整される。 The plurality of ejection portions 412 arranged along the width direction X are closer to the two conveying rollers 31 of each set, that is, the ejection portions 412 located on both end sides of the width direction X are closer to each pair. , i.e., the ejection portion 412 located on the center side in the width direction X, the amount of treatment liquid ejected per unit time (hereinafter sometimes simply referred to as "ejection amount") is greater. is set to In this embodiment, the discharge amount of the discharge section 412B is larger than the discharge amount of the discharge sections 412A and 412C. In order to achieve such a discharge amount, the plurality of discharge sections 412 arranged along the width direction X are provided with individually variable flow rates of the processing liquid discharged per unit time. More specifically, the control unit 50 controls valves (not shown) provided in pipes connected to the pipes 411 to adjust the amount of processing liquid flowing through each pipe 411 .

(気体吹出部)
気体吹出部42は、搬送路Tを移動する基板Wに、例えば、空気又は窒素ガスのような乾燥用の気体を吹き出して供給する。気体吹出部42は、基板搬送装置30による基板Wの搬送を妨げないように、搬送される基板Wとは搬送路Tを挟んで離間して基板Wに対向するように設けられている。なお、気体吹出部42と搬送路Tとの間には、シャフトやローラなどが介在していない。気体吹出部42は、搬送路Tを通過する基板Wに向けて高圧で気体を吹き出し、基板Wに付着している洗浄液などの処理液を吹き飛ばして基板Wの処理面を乾燥させる。
(Gas blowing part)
The gas blowing part 42 blows and supplies drying gas such as air or nitrogen gas to the substrate W moving on the transport path T, for example. The gas blowing part 42 is provided so as to face the substrate W while being separated from the transported substrate W across the transport path T so as not to interfere with the transport of the substrate W by the substrate transport device 30 . No shaft, roller, or the like is interposed between the gas blowout portion 42 and the transport path T. As shown in FIG. The gas blowing part 42 blows off a high-pressure gas toward the substrates W passing through the transport path T, blows away the processing liquid such as the cleaning liquid adhering to the substrates W, and dries the processing surface of the substrates W. FIG.

気体吹出部42は、例えば、図1及び図2に示すように、反りを有する基板Wの幅よりも、長いスリット状の吹出口42aを有するエアナイフである。気体吹出部42は、吹出口42aから搬送方向Tdの上流側に向けて気体を吹き出し、基板Wに付着している液体を吹き飛ばすように設けられている。 The gas blowout part 42 is, for example, an air knife having a slit-shaped blowout port 42a longer than the width of the warped substrate W, as shown in FIGS. The gas blowing part 42 is provided so as to blow off the liquid adhering to the substrate W by blowing off the gas from the blowing port 42a toward the upstream side in the transport direction Td.

[制御部]
制御部50は、図1に示すように、基板搬送装置30、流体供給部40など、基板処理装置10の各部を制御するコンピュータであり、基板搬送及び基板処理に関する各種の情報及びプログラムなどを記憶する記憶部と、各種のプログラムを実行するプロセッサを有する。本実施形態の制御部50は、上記のように、バルブを制御することにより、パイプ411を流れる処理液の量が調整され、各組の2個の搬送ローラ31に近い端部側、つまり幅方向Xの両端側よりも、各組の2個の搬送ローラ31から遠い中央側、つまり幅方向Xの中央及びその近傍の方が吐出量が多くなる。
[Control section]
As shown in FIG. 1, the control section 50 is a computer that controls each section of the substrate processing apparatus 10 such as the substrate transfer apparatus 30 and the fluid supply section 40, and stores various information and programs related to substrate transfer and substrate processing. and a processor for executing various programs. The control unit 50 of the present embodiment controls the valves as described above to adjust the amount of processing liquid flowing through the pipe 411, and the end portions near the two conveying rollers 31 of each set, that is, the width The ejection amount is greater on the central side farther from the two conveying rollers 31 of each set, that is, on the center in the width direction X and in the vicinity thereof than on both end sides in the X direction.

[動作]
次に、基板処理装置10の動作を説明する。なお、以下の動作は、基板Wを洗浄液で洗浄し、乾燥する動作の一例である。上記のように、基板処理装置10は、基板搬送装置30の各搬送ローラ31及び各押えローラ32が同期して回転し、基板Wは、凹面S1側の端部が各搬送ローラ31上に支持された状態で、搬送方向Tdに搬送されて搬送路Tに沿って移動し、処理室21を通過する。
[motion]
Next, the operation of the substrate processing apparatus 10 will be described. The following operation is an example of the operation of cleaning the substrate W with the cleaning liquid and drying it. As described above, in the substrate processing apparatus 10, the conveying rollers 31 and the pressing rollers 32 of the substrate conveying device 30 rotate synchronously, and the substrate W is supported on the conveying rollers 31 at the end on the concave surface S1 side. In this state, it is transported in the transport direction Td, moves along the transport path T, and passes through the processing chamber 21 .

処理室21では、各パイプ411の吐出部412により、搬送路Tの下から洗浄液が予め供給されている液供給状態にある。この液供給状態となった領域を、反りを有する基板Wが搬送されて通過すると、基板Wの凹面S1に洗浄液が供給されて洗浄される。基板Wの凹面S1側には、第1のシャフト31cが無い状態であり、基板Wの凹面S1に供給された洗浄液は、第1のシャフト31cに遮られることなく、パターン形成領域に当たる。基板Wに供給された洗浄液は、基板Wの端部に向かって流れて端部から落下して、処理室21の底面を流れて排出口から排出される。 The processing chamber 21 is in a liquid supply state in which the cleaning liquid is supplied in advance from below the transport path T by the ejection portions 412 of the pipes 411 . When the warped substrate W is conveyed and passes through the region in which the liquid is supplied, the concave surface S1 of the substrate W is supplied with the cleaning liquid and cleaned. There is no first shaft 31c on the concave surface S1 side of the substrate W, and the cleaning liquid supplied to the concave surface S1 of the substrate W hits the pattern formation region without being blocked by the first shaft 31c. The cleaning liquid supplied to the substrate W flows toward the edge of the substrate W, drops from the edge, flows along the bottom surface of the processing chamber 21, and is discharged from the discharge port.

なお、凹面S1は、中央から両端に向かって下がるように傾斜している。このため、基板Wの端部に近い吐出部412A、412Cから供給された洗浄液は、中央に達することなく、端部から落下する。一方、本実施形態では、吐出部412Bから基板Wの凹面S1の中央に、洗浄液を供給することにより、中央から端部に向かって汚染物を押し流す流れを形成する。これにより、基板Wの処理面に存在する汚染物を除去できる。 The concave surface S1 is inclined downward from the center toward both ends. Therefore, the cleaning liquid supplied from the ejection parts 412A and 412C near the edge of the substrate W drops from the edge without reaching the center. On the other hand, in the present embodiment, by supplying the cleaning liquid from the discharge part 412B to the center of the concave surface S1 of the substrate W, a flow that sweeps away the contaminants from the center toward the edge is formed. As a result, contaminants existing on the processing surface of the substrate W can be removed.

但し、基板Wが反りを有しているために、凹面S1の中央が、端部よりも吐出部412からの距離が長いとき、吐出部412の配置高さ位置が一定の場合に、中央の吐出部412Bの流量を、両端の吐出部412A、412Cの流量と同様とすると、凹面S1の中央に十分な流量の洗浄液を供給できない場合がある。すると、洗浄液が凹面S1の端部に達する前に滞留又は落下してしまい、汚染物の滞留による再付着につながる。本実施形態では、中央の吐出部412Bの流量を、端部に近い吐出部412A、412Cよりも多くしているため、凹面S1の中央に十分な流量の洗浄液が供給され、中央から端部に向かう流れを形成でき、汚染物を除去できる。 However, since the substrate W has a warp, when the center of the concave surface S1 is farther from the discharge part 412 than the end part, when the discharge part 412 is arranged at a constant height position, the center If the flow rate of the ejection portion 412B is the same as the flow rate of the ejection portions 412A and 412C at both ends, there may be cases where a sufficient flow rate of the cleaning liquid cannot be supplied to the center of the concave surface S1. Then, the cleaning liquid stays or falls before reaching the end of the concave surface S1, which leads to reattachment of contaminants due to their staying. In the present embodiment, the flow rate of the central ejection portion 412B is made larger than that of the ejection portions 412A and 412C closer to the ends, so that a sufficient flow rate of the cleaning liquid is supplied to the center of the concave surface S1, and the flow rate from the center to the ends is increased. A directed flow can be formed and contaminants can be removed.

処理室21では、気体吹出部42によって、搬送路Tの下から乾燥用の気体が予め供給されている。この気体供給状態となった領域を、基板Wが通過すると、基板Wの凹面S1に付着している洗浄液が、気体の吹き付けによって吹き飛ばされ、基板Wが乾燥していく。基板Wから吹き飛ばされた洗浄液は、処理室21の底面を流れて排出口から排出される。 In the processing chamber 21 , the drying gas is supplied in advance from below the transport path T by the gas blowing section 42 . When the substrate W passes through the region in which the gas is supplied, the cleaning liquid adhering to the concave surface S1 of the substrate W is blown off by the gas, and the substrate W dries. The cleaning liquid blown off from the substrate W flows along the bottom surface of the processing chamber 21 and is discharged from the discharge port.

[実施形態の効果]
(1)本実施形態は、反りを有する基板Wを搬送する基板搬送装置30であって、基板Wの凹面S1側を支持し、軸を中心に回転することにより、基板Wを搬送する複数の搬送ローラ31と、搬送ローラ31と同軸に設けられた第1のシャフト31cと、基板Wの凹面S1に流体を供給する流体供給部40と、を備えている。
[Effects of Embodiment]
(1) The present embodiment is a substrate transporting apparatus 30 for transporting a warped substrate W, which supports the concave surface S1 side of the substrate W and rotates about an axis to transport the substrate W. A transport roller 31, a first shaft 31c provided coaxially with the transport roller 31, and a fluid supply unit 40 for supplying a fluid to the concave surface S1 of the substrate W are provided.

搬送ローラ31の回転軸は、基板Wの搬送方向Tdに直交する幅方向Xであり、搬送ローラ31は、幅方向Xに離間して設けられた2個を1組として、複数組の搬送ローラ31が搬送方向Tdに配置され、各組の2個の搬送ローラ31には、幅方向Xに離間した2本の第1のシャフト31cが設けられ、流体供給部40は、離間した各組の搬送ローラ31の間から、基板Wの凹面S1に流体を供給する。 The rotation axis of the transport rollers 31 is in the width direction X perpendicular to the transport direction Td of the substrate W, and the transport rollers 31 are arranged in a plurality of pairs, each set including two rollers spaced apart in the width direction X. 31 are arranged in the conveying direction Td, the two conveying rollers 31 of each set are provided with two first shafts 31c spaced apart in the width direction X, and the fluid supply part 40 is provided with the spaced apart pair of the rollers 31c. A fluid is supplied to the concave surface S<b>1 of the substrate W from between the transport rollers 31 .

仮に、基板Wを下が凸面S2となるように搬送する場合には、凸面S2側の傾斜面を支持することになり、滑りやすく支持が安定せず、下側に基板Wを支える部材や機構等を追加する必要がある。一方、本実施形態では、凹面S1側を支持することにより、基本的には基板Wの端部のみを支持するだけでよいので、安定して搬送できる。 If the substrate W were to be transported with the convex surface S2 downward, the inclined surface on the convex surface S2 side would have to be supported. etc. should be added. On the other hand, in this embodiment, by supporting the concave surface S1 side, it is basically only necessary to support only the edge portion of the substrate W, so that the substrate can be transported stably.

また、仮に、基板Wの幅方向Xの全体に亘ってシャフトが設けられていると、流体供給部40から供給された流体がシャフトに当たり、基板Wに届かない部分が発生したり、基板Wに均一に供給されず、基板Wの効率的な処理を妨げる。しかし、本実施形態では、凹面S1側において、搬送ローラ31及び第1のシャフト31cが幅方向Xに離間して設けられているので、流体供給部40から供給された流体が、搬送ローラ31や第1のシャフト31cによって遮られることが防止される。このため、流体を処理面に均一に当てることができるので、均一な処理が可能となり、基板Wの品質の低下を抑制できる。 Further, if the shaft were provided over the entire width direction X of the substrate W, the fluid supplied from the fluid supply unit 40 would hit the shaft, and there would be a portion where the substrate W could not be reached. The substrates W are not supplied uniformly, which prevents efficient processing of the substrates W. However, in the present embodiment, since the transport roller 31 and the first shaft 31c are spaced apart in the width direction X on the side of the concave surface S1, the fluid supplied from the fluid supply unit 40 is Blocking by the first shaft 31c is prevented. Therefore, the fluid can be uniformly applied to the surface to be processed, so that uniform processing can be performed and degradation of the quality of the substrate W can be suppressed.

さらに、各組の搬送ローラ31及び第1のシャフト31cの間から、基板Wの凹面S1に流体を供給することにより、凹面S1の傾斜によって、中央から端部への流れが形成されるので、凹面S1の処理が不十分になることを抑制でき、基板Wの品質を向上させることができる。 Furthermore, by supplying the fluid to the concave surface S1 of the substrate W from between each pair of transport rollers 31 and the first shaft 31c, the inclination of the concave surface S1 forms a flow from the center to the end, Insufficient processing of the concave surface S1 can be suppressed, and the quality of the substrate W can be improved.

(2)本実施形態は、基板Wの凸面S2を押さえる押えローラ32と、押えローラ32と同軸に設けられた第2のシャフト32aと、を備える。このため、凹面S1側から処理液の供給による圧力が加わっても、押えローラ32によって浮き上がりが防止されるので、基板Wの位置が安定し、均一な処理を維持できる。 (2) This embodiment includes a pressing roller 32 that presses the convex surface S2 of the substrate W, and a second shaft 32a provided coaxially with the pressing roller 32 . Therefore, even if pressure is applied from the concave surface S1 side by the supply of the processing liquid, the pressing roller 32 prevents the substrate W from floating, so that the position of the substrate W is stabilized and uniform processing can be maintained.

(3)幅方向Xに沿って配置された複数の吐出部412は、各組の2個の搬送ローラ31に近い側よりも、各組の2個の搬送ローラ31から遠い側の処理液の吐出量が多い。このため、凹面S1の端部側よりも中央側に位置する吐出部からの処理液の吐出量が多くなり、中央から端部へ向かう流れが形成されやすくなり、全体の処理を均一にできる。例えば、図2に示すように、複数の吐出部412が同じ高さに設けられている場合には、中央の吐出部412Bの吐出口は、基板Wとの離間距離が、他の吐出部412A、412Cに比べて長くなるために、吐出された処理液が吐出部412A、412B、412Cごとにばらついたり、基板Wの凹面S1の中央に処理液が衝突する圧力が弱くなる。本実施形態においては、凹面S1の中央の下方に設けられた吐出部412Bの吐出量を、他の吐出部412A、412Cよりも多くすることで、中央の処理液の流量を確保して、中央から端部への流れを形成できる。また、凹面S1に対して処理液が衝突する圧力を均一にすることも可能となる。 (3) The plurality of discharge portions 412 arranged along the width direction X are arranged to distribute the treatment liquid farther from the two transport rollers 31 of each set than the side closer to the two transport rollers 31 of each set. Discharge volume is large. Therefore, the amount of treatment liquid ejected from the ejecting portion positioned closer to the center of the recessed surface S1 is greater than that at the end, making it easier to form a flow from the center to the edge, thereby making the entire process uniform. For example, as shown in FIG. 2, when a plurality of ejection portions 412 are provided at the same height, the ejection port of the central ejection portion 412B is separated from the substrate W by the other ejection portions 412A. , and 412C, the ejected processing liquid varies among the ejecting portions 412A, 412B, and 412C, and the pressure at which the processing liquid collides with the center of the concave surface S1 of the substrate W becomes weaker. In the present embodiment, the ejection amount of the ejection portion 412B provided below the center of the concave surface S1 is made larger than that of the other ejection portions 412A and 412C, thereby securing the flow rate of the processing liquid in the center. can form a flow from to the edge. It is also possible to make uniform the pressure at which the treatment liquid collides with the concave surface S1.

(4)幅方向Xに沿って配置された複数の吐出部412は、吐出する処理液の流量を個別に可変に設けられている。このため、基板Wの反りによる凹面S1と各吐出部412との距離の相違に応じて、各吐出部412の流量を調整することにより、均一な処理が可能となる。 (4) A plurality of ejection sections 412 arranged along the width direction X are provided to individually vary the flow rate of the treatment liquid to be ejected. Therefore, by adjusting the flow rate of each ejection part 412 according to the difference in the distance between the concave surface S1 and each ejection part 412 due to the warping of the substrate W, uniform processing can be performed.

(5)流体供給部40は、搬送方向Tdに沿う複数のパイプ411を有し、複数のパイプ411は、幅方向Xに並べて配置され、吐出部412は、パイプ411に設けられている。このため、各パイプ411の処理液の流量を調整することにより、幅方向Xに沿って配置された複数の吐出部412からの処理液の吐出量を調整できる。 (5) The fluid supply section 40 has a plurality of pipes 411 along the transport direction Td, the plurality of pipes 411 are arranged side by side in the width direction X, and the discharge section 412 is provided in the pipes 411 . Therefore, by adjusting the flow rate of the processing liquid in each pipe 411, the discharge amount of the processing liquid from the plurality of discharging portions 412 arranged along the width direction X can be adjusted.

[他の実施形態]
(1)搬送ローラ31には、必ずしも鍔状部31bを設ける必要はない。例えば、図4に示すように、基板Wの搬送方向Tdに並ぶ複数の第1のシャフト31cの間に、基板Wの移動をガイドするガイドローラ33を設けてもよい。この場合、一対の対向するガイドローラ33の離間距離をeとすると、e≧Lとすることが好ましい。
[Other embodiments]
(1) The conveying roller 31 does not necessarily need to be provided with the flange portion 31b. For example, as shown in FIG. 4, guide rollers 33 that guide the movement of the substrate W may be provided between a plurality of first shafts 31c arranged in the substrate W transport direction Td. In this case, it is preferable that e≧L, where e is the distance between the pair of opposing guide rollers 33 .

(2)上記の態様では、押えローラ32は、搬送方向Tdに直交する幅方向Xに1つとしているが、これに限らず、複数設けてもよい。例えば、各搬送ローラ31に対向する位置に、押えローラ32を1つずつ設けてもよい。押えローラ32にベルトを掛けまわし、ローラコンベアのようにしてもよい。このような構成を採用することにより、押えローラ32のみを使用する場合と比較して基板Wの反りに対して接触する面積が増えるため、より安定して基板Wを搬送できる。また、フラットタイプのローラとしてもよい。 (2) In the above embodiment, one pressing roller 32 is provided in the width direction X orthogonal to the transport direction Td, but the present invention is not limited to this, and a plurality of pressing rollers 32 may be provided. For example, one pressing roller 32 may be provided at a position facing each conveying roller 31 . A belt may be wound around the pressing roller 32 to form a roller conveyor. By adopting such a configuration, compared to the case where only the pressing roller 32 is used, the contact area against the warpage of the substrate W increases, so the substrate W can be transported more stably. Moreover, it is good also as a flat type roller.

(3)基板Wの反り量を測定する測定部を設け、測定部により測定した基板Wの反り量に応じて、吐出部412からの吐出量を調整するようにしてもよい。例えば、測定部により測定した基板Wの反り量が所定値よりも大きい場合には、中央の吐出部412Bからの吐出量を多くするようにしてもよい。 (3) A measurement unit for measuring the warp amount of the substrate W may be provided, and the discharge amount from the discharge unit 412 may be adjusted according to the warp amount of the substrate W measured by the measurement unit. For example, when the amount of warpage of the substrate W measured by the measurement unit is larger than a predetermined value, the discharge amount from the central discharge unit 412B may be increased.

(4)基板Wの反り量を測定する測定部、各押えローラ32を昇降させる移動機構を設け、測定部により測定した基板Wの反り量に応じて、各組の搬送ローラ31及び押えローラ32の離間距離を調整するようにしてもよい。 (4) A measurement unit for measuring the amount of warpage of the substrate W and a moving mechanism for lifting and lowering each pressing roller 32 are provided. You may make it adjust the separation distance of .

(5)上記の態様では、洗浄処理と乾燥処理を共通の室内で行うことを例示したが、これに限るものではない。洗浄処理と乾燥処理を異なる室内で行うようにしてもよい。 (5) In the above embodiment, the cleaning process and the drying process are performed in a common room as an example, but the invention is not limited to this. The cleaning process and the drying process may be performed in different rooms.

(6)上記の態様では、複数の吐出部412は、各組の2個の搬送ローラ31に近い側よりも、各組の2個の搬送ローラ31から遠い側の方が、処理液の単位時間当たりの吐出量が多くなるように設定されている。このとき、各吐出部412の吐出孔の径が等しい場合には、各組の2個の搬送ローラ31に近い側よりも、各組の2個の搬送ローラ31から遠い側の方が、吐出部における処理液の吐出速度が速くなるようにすればよい。 (6) In the above aspect, the plurality of discharge sections 412 are arranged such that the side farther from the two transport rollers 31 of each group is the unit of treatment liquid than the side closer to the two transport rollers 31 of each group. It is set so that the discharge amount per hour is large. At this time, when the diameters of the ejection holes of the respective ejection portions 412 are equal, the side farther from the two conveying rollers 31 of each set discharges more than the side closer to the two conveying rollers 31 of each set. The ejection speed of the processing liquid in the portion may be increased.

(7)上記の態様では、パイプ411は、パイプ411A、411B、411Cの3つとしているが、3つに限らず、それ以上設けてもよい。このとき、中央側の1つのみが、それ以外よりも吐出量が多くなるようにしてもよく、搬送ローラ31に近い側から中央にむけて段階的に吐出量が多くなるようにしてもよい。 (7) In the above embodiment, there are three pipes 411, ie, pipes 411A, 411B, and 411C, but the number is not limited to three, and more than three may be provided. At this time, only one on the central side may have a larger ejection amount than the others, or the ejection amount may increase stepwise from the side closer to the conveying roller 31 toward the center. .

(8)流体供給部40としては、上記のシャワー状に処理液を吐出するノズル、エアナイフの他、アクアナイフなどでもよく、また流体を吐出するものであれば、とくに使用するツールは限定されない。さらに、これらの複数種のツールを組み合わせて用いてもよい。また、流体供給部40は、基板Wの搬送路Tの上方に設け、基板Wの凸面S2(パターンPが形成されていない非パターン形成面)に処理用の流体を供給することにより、基板Wの両面を処理するようにしてもよい。 (8) The fluid supply unit 40 may be a nozzle that ejects the treatment liquid in a shower-like manner, an air knife, or an aqua knife. Furthermore, these multiple types of tools may be used in combination. Further, the fluid supply unit 40 is provided above the transport path T of the substrate W, and supplies the processing fluid to the convex surface S2 of the substrate W (the non-pattern forming surface on which the pattern P is not formed), so that the substrate W may be processed on both sides.

(9)上記の態様では、基板処理装置10の処理として、基板Wを洗浄、乾燥する処理を例示したが、処理はこれに限るものではない。液晶基板や半導体基板、フォトマスクなどの製造のため、例えば、レジスト処理装置、露光処理装置、現像処理装置、エッチング処理装置、剥離処理装置を用いるようにしてもよい。これに応じて、処理液としては、各種の薬液を用いることが可能である。 (9) In the above aspect, as the processing of the substrate processing apparatus 10, the processing of cleaning and drying the substrate W was exemplified, but the processing is not limited to this. For manufacturing liquid crystal substrates, semiconductor substrates, photomasks, etc., for example, a resist processing device, an exposure processing device, a development processing device, an etching processing device, and a stripping processing device may be used. Accordingly, various chemical solutions can be used as the treatment liquid.

(10)上記の態様では、基板Wを水平状態で搬送することを例示したが、これに限るものではなく、基板Wを傾けて傾斜状態で搬送するようにしてもよく、例えば、基板Wの幅方向Xの一端をその他端よりも高くして基板Wを傾けて搬送するようにしてもよい。 (10) In the above embodiment, the substrate W is conveyed in a horizontal state, but the present invention is not limited to this. One end in the width direction X may be higher than the other end, and the substrate W may be tilted and transported.

(11)上記の態様では、四方に反りがある基板W(四方に反りを有する基板W)を対象に説明したが、これに限るものではなく、例えば矩形のいずれか二辺、三辺に反りがあるものであっても本発明は適用可能である。 (11) In the above embodiment, the substrate W warped on all four sides (the substrate W warped on all four sides) was described, but the present invention is not limited to this. The present invention is applicable even if there is

(12)以上、本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。 (12) Although several embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and modifications can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the scope of the invention described in the claims and equivalents thereof.

10 基板処理装置
21 処理室
30 基板搬送装置
31 搬送ローラ
31a 円柱部
31b 鍔状部
31c 第1のシャフト
32 押えローラ
32a 第2のシャフト
33 ガイドローラ
40 流体供給部
41 液噴射部
42 気体吹出部
42a 吹出口
50 :制御部
411 :パイプ
411A :パイプ
411B :パイプ
411C :パイプ
412 :吐出部
412A :吐出部
412B :吐出部
412C :吐出部
T :搬送路

10 Substrate processing apparatus 21 Processing chamber 30 Substrate transfer apparatus 31 Transfer roller 31a Cylindrical portion 31b Collar portion 31c First shaft 32 Press roller 32a Second shaft 33 Guide roller 40 Fluid supply unit 41 Liquid injection unit 42 Gas blowout unit 42a Blowout port 50 : Control unit 411 : Pipe 411A : Pipe 411B : Pipe 411C : Pipe 412 : Discharge unit 412A : Discharge unit 412B : Discharge unit 412C : Discharge unit T : Conveyance path

本発明の実施形態は、反りを有する基板を処理する基板処理装置であって、前記基板の搬送方向に直交する幅方向に離間して設けられる2個を1組として、前記基板の搬送方向に沿って複数組設けられ、前記基板の凹面側を支持し前記基板を搬送する複数の搬送ローラと、前記幅方向に離間して設けられる2本を1組として、前記基板の搬送方向に沿って複数組設けられ、前記搬送ローラが取り付けられる第1のシャフトと、前記基板の凹面に流体を供給する流体供給部と、を備え、前記流体供給部は、前記幅方向に離間した各組の前記搬送ローラの間から、前記基板の凹面に流体を供給する。

An embodiment of the present invention is a substrate processing apparatus for processing a substrate having a warp, wherein a set of two substrates provided apart in a width direction perpendicular to the transport direction of the substrate is arranged in the transport direction of the substrate. A plurality of sets of transport rollers provided along the transport direction of the substrate support the concave surface side of the substrate and transport the substrate, and two rollers spaced apart in the width direction are set as one set along the transport direction of the substrate. a first shaft to which the conveying roller is attached ; and a fluid supply unit for supplying a fluid to the concave surface of the substrate. A fluid is supplied to the concave surface of the substrate from between the transport rollers.

Claims (5)

反りを有する基板を処理する基板処理装置であって、
前記基板の凹面側を支持し、軸を中心に回転することにより、前記基板を搬送する複数の搬送ローラと、
前記搬送ローラと同軸に設けられた第1のシャフトと、
前記基板の凹面に流体を供給する流体供給部と、
を備え、
前記搬送ローラの軸は、前記基板の搬送方向に直交する幅方向であり、前記搬送ローラは、前記幅方向に離間して設けられた2個を1組として、複数組が前記搬送方向に配置され、
各組の2個の前記搬送ローラには、前記幅方向に離間した2本の前記第1のシャフトが設けられ、
前記流体供給部は、離間した各組の前記搬送ローラの間から、前記基板の凹面に流体を供給することを特徴とする基板処理装置。
A substrate processing apparatus for processing a warped substrate,
a plurality of transport rollers that support the concave side of the substrate and transport the substrate by rotating about an axis;
a first shaft provided coaxially with the conveying roller;
a fluid supply unit that supplies a fluid to the concave surface of the substrate;
with
The axes of the conveying rollers are in the width direction perpendicular to the conveying direction of the substrate, and the conveying rollers are arranged in the conveying direction, with two conveying rollers set apart in the width direction being one set. is,
The two transport rollers of each set are provided with the two first shafts spaced apart in the width direction,
The substrate processing apparatus, wherein the fluid supply unit supplies the fluid to the concave surface of the substrate from between each pair of the conveying rollers that are separated from each other.
前記基板の凸面を押さえる押えローラと、
前記押えローラと同軸に設けられた第2のシャフトと、
を備えることを特徴とする請求項1記載の基板処理装置。
a pressing roller that presses the convex surface of the substrate;
a second shaft provided coaxially with the pressing roller;
2. The substrate processing apparatus according to claim 1, comprising:
前記流体供給部は、前記幅方向に沿って配置された複数の吐出部を有し、
複数の前記吐出部は、各組の2個の搬送ローラに近い側よりも、各組の2個の搬送ローラから遠い側の前記処理液の吐出量が多いことを特徴とする請求項1又は請求項2記載の基板処理装置。
The fluid supply unit has a plurality of discharge units arranged along the width direction,
2. The plurality of discharge units discharge a larger amount of the treatment liquid on a side farther from the two conveying rollers of each set than on a side closer to the two conveying rollers of each set. 3. The substrate processing apparatus according to claim 2.
前記流体供給部は、前記幅方向に沿って配置された複数の吐出部を有し、
複数の前記吐出部は、吐出する処理液の流量を個別に可変に設けられていることを特徴とする請求項1乃至3のいずれかに記載の基板処理装置。
The fluid supply unit has a plurality of discharge units arranged along the width direction,
4. The substrate processing apparatus according to any one of claims 1 to 3, wherein the plurality of discharge units are provided so that the flow rate of the processing liquid to be discharged is individually variable.
前記流体供給部は、前記搬送方向に沿う複数のパイプを有し、
複数の前記パイプは、前記幅方向に並べて配置され、
前記吐出部は、前記パイプに設けられていることを特徴とする請求項3又は請求項4記載の基板処理装置。
The fluid supply unit has a plurality of pipes along the transport direction,
The plurality of pipes are arranged side by side in the width direction,
5. The substrate processing apparatus according to claim 3, wherein said discharge part is provided in said pipe.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07188949A (en) * 1993-12-27 1995-07-25 Masamichi Kodama Surface treatment of substrate and treating device therefor
JPH08288250A (en) * 1995-04-19 1996-11-01 Dainippon Screen Mfg Co Ltd Liquid drip apparatus
JP2001085496A (en) * 1999-09-10 2001-03-30 Daiichi Shisetsu Kogyo Kk Carrying device of plate-like member
JP2019067848A (en) * 2017-09-29 2019-04-25 株式会社Febacs Substrate transfer apparatus and substrate processing apparatus provided with substrate transfer apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1110096A (en) 1997-06-20 1999-01-19 Dainippon Screen Mfg Co Ltd Substrate treating device
JP4180250B2 (en) 2001-05-30 2008-11-12 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
JP2017147399A (en) 2016-02-19 2017-08-24 芝浦メカトロニクス株式会社 Substrate processing device and substrate processing method
JP2019091746A (en) * 2017-11-13 2019-06-13 株式会社荏原製作所 Device and method for substrate surface treatment
KR102656981B1 (en) * 2018-03-27 2024-04-11 가부시키가이샤 에바라 세이사꾸쇼 Cleaning appratus, plating apparatus including the same, and cleaning method
KR102404501B1 (en) 2019-07-25 2022-06-07 시바우라 메카트로닉스 가부시끼가이샤 Substrate transport apparatus and substrate processing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07188949A (en) * 1993-12-27 1995-07-25 Masamichi Kodama Surface treatment of substrate and treating device therefor
JPH08288250A (en) * 1995-04-19 1996-11-01 Dainippon Screen Mfg Co Ltd Liquid drip apparatus
JP2001085496A (en) * 1999-09-10 2001-03-30 Daiichi Shisetsu Kogyo Kk Carrying device of plate-like member
JP2019067848A (en) * 2017-09-29 2019-04-25 株式会社Febacs Substrate transfer apparatus and substrate processing apparatus provided with substrate transfer apparatus

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