TW202225246A - 耐藥液性保護膜 - Google Patents

耐藥液性保護膜 Download PDF

Info

Publication number
TW202225246A
TW202225246A TW110133544A TW110133544A TW202225246A TW 202225246 A TW202225246 A TW 202225246A TW 110133544 A TW110133544 A TW 110133544A TW 110133544 A TW110133544 A TW 110133544A TW 202225246 A TW202225246 A TW 202225246A
Authority
TW
Taiwan
Prior art keywords
group
protective film
carbon atoms
film
substituted
Prior art date
Application number
TW110133544A
Other languages
English (en)
Chinese (zh)
Inventor
西田登喜雄
遠藤勇樹
Original Assignee
日商日產化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日產化學股份有限公司 filed Critical 日商日產化學股份有限公司
Publication of TW202225246A publication Critical patent/TW202225246A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C09D163/04—Epoxynovolacs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Structural Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Architecture (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW110133544A 2020-09-10 2021-09-09 耐藥液性保護膜 TW202225246A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-151888 2020-09-10
JP2020151888 2020-09-10

Publications (1)

Publication Number Publication Date
TW202225246A true TW202225246A (zh) 2022-07-01

Family

ID=80631552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110133544A TW202225246A (zh) 2020-09-10 2021-09-09 耐藥液性保護膜

Country Status (6)

Country Link
US (1) US20230333470A1 (https=)
JP (1) JP7841430B2 (https=)
KR (1) KR20230066359A (https=)
CN (1) CN116057103B (https=)
TW (1) TW202225246A (https=)
WO (1) WO2022054853A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250333565A1 (en) * 2022-05-24 2025-10-30 Nissan Chemical Corporation Chemical-resistant protective film
KR20250016138A (ko) * 2022-05-24 2025-02-03 닛산 가가쿠 가부시키가이샤 약액내성 보호막

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4573050B2 (ja) * 2006-07-21 2010-11-04 信越化学工業株式会社 レジスト下層膜形成材料及びパターン形成方法
JP4721978B2 (ja) 2006-08-01 2011-07-13 信越化学工業株式会社 レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
JPWO2008117619A1 (ja) * 2007-03-26 2010-07-15 Jsr株式会社 感光性絶縁樹脂組成物
WO2017029935A1 (ja) * 2015-08-18 2017-02-23 Dic株式会社 ノボラック型フェノール性水酸基含有樹脂及びレジスト膜
JP7196389B2 (ja) * 2016-08-10 2022-12-27 Jsr株式会社 半導体用レジスト下層膜形成組成物、レジスト下層膜、レジスト下層膜の形成方法及びパターニング基板の製造方法
JP6718406B2 (ja) 2017-03-31 2020-07-08 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
KR20190140998A (ko) * 2017-05-02 2019-12-20 닛산 가가쿠 가부시키가이샤 과산화수소수용액에 대한 보호막형성 조성물
US12044968B2 (en) * 2019-01-21 2024-07-23 Nissan Chemical Corporation Protective film-forming composition having acetal structure and amide structure
KR102800934B1 (ko) * 2020-03-30 2025-04-29 닛산 가가쿠 가부시키가이샤 약액 내성 보호막

Also Published As

Publication number Publication date
US20230333470A1 (en) 2023-10-19
WO2022054853A1 (ja) 2022-03-17
CN116057103B (zh) 2026-04-10
KR20230066359A (ko) 2023-05-15
CN116057103A (zh) 2023-05-02
JP7841430B2 (ja) 2026-04-07
JPWO2022054853A1 (https=) 2022-03-17

Similar Documents

Publication Publication Date Title
US20230324802A1 (en) Resist underlayer film-forming composition containing indolocarbazole novolak resin
JP6974799B2 (ja) 膜密度が向上したレジスト下層膜を形成するための組成物
EP2650729A1 (en) Composition for forming resist underlayer film containing hydroxyl group-containing carbazole novolac resin
CN106164774B (zh) 含有包含丙烯酰胺结构和丙烯酸酯结构的聚合物的光刻用抗蚀剂下层膜形成用组合物
TWI844674B (zh) 包含脂環式化合物末端之聚合物的阻劑下層膜形成組成物、經圖型化之基板的製造方法、及半導體裝置之製造方法
WO2016043317A1 (ja) レジストパターン被覆用塗布液
CN116057103B (zh) 药液耐性保护膜
WO2022186231A1 (ja) ベンジリデンシアノ酢酸エステル基を有するレジスト下層膜形成組成物
KR102800934B1 (ko) 약액 내성 보호막
US20250034427A1 (en) Chemical-resistant protective film-forming composition having catechol group
WO2023100506A1 (ja) ヒドロキシケイ皮酸誘導体を有するレジスト下層膜形成用組成物
JP7275676B2 (ja) レジスト下層膜形成組成物
TWI921328B (zh) 半導體裝置的製造方法
WO2023084961A1 (ja) 薬液耐性保護膜
TWI885249B (zh) 含萘單元之阻劑下層膜形成組成物、經圖型化之基板之製造方法、半導體裝置之製造方法
WO2026083794A1 (ja) レジスト下層膜形成用組成物
JP7244795B2 (ja) 単分子層又は多分子層形成用組成物、単分子層又は多分子層及び積層体並びに基板の製造方法
TW202506778A (zh) 阻劑下層膜形成用組成物
WO2023171370A1 (ja) 前処理用組成物
WO2025183182A1 (ja) 半導体素子形成用組成物
TW202336070A (zh) 含有烷氧基之阻劑下層膜形成用組成物
WO2023228662A1 (ja) 薬液耐性保護膜
TW202436418A (zh) 阻劑下層膜形成組成物
WO2023228661A1 (ja) 薬液耐性保護膜
CN116783552A (zh) 包含具有脂环式烃基的聚合物的抗蚀剂下层膜形成用组合物