TW202219632A - 來自Sn(II)前驅物的光阻 - Google Patents

來自Sn(II)前驅物的光阻 Download PDF

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Publication number
TW202219632A
TW202219632A TW110126458A TW110126458A TW202219632A TW 202219632 A TW202219632 A TW 202219632A TW 110126458 A TW110126458 A TW 110126458A TW 110126458 A TW110126458 A TW 110126458A TW 202219632 A TW202219632 A TW 202219632A
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TW
Taiwan
Prior art keywords
optionally substituted
film
euv
alkyl
radiation
Prior art date
Application number
TW110126458A
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English (en)
Chinese (zh)
Inventor
艾瑞克 卡爾文 漢森
吳呈昊
蒂莫西 威廉 魏德曼
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美商蘭姆研究公司
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Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202219632A publication Critical patent/TW202219632A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
TW110126458A 2020-07-17 2021-07-19 來自Sn(II)前驅物的光阻 TW202219632A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062705856P 2020-07-17 2020-07-17
US62/705,856 2020-07-17

Publications (1)

Publication Number Publication Date
TW202219632A true TW202219632A (zh) 2022-05-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW110126458A TW202219632A (zh) 2020-07-17 2021-07-19 來自Sn(II)前驅物的光阻

Country Status (6)

Country Link
US (1) US20230266664A1 (enExample)
JP (1) JP2023535894A (enExample)
KR (1) KR102846047B1 (enExample)
CN (1) CN116171403A (enExample)
TW (1) TW202219632A (enExample)
WO (1) WO2022016127A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI867534B (zh) * 2022-07-12 2024-12-21 南韓商三星Ｓｄｉ股份有限公司 半導體光阻組成物及使用所述組成物形成圖案的方法
TWI890197B (zh) * 2022-11-15 2025-07-11 美商恩特葛瑞斯股份有限公司 官能化有機錫前驅物及相關方法
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist

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US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
KR102731166B1 (ko) 2018-12-20 2024-11-18 램 리써치 코포레이션 레지스트들의 건식 현상 (dry development)
KR20210129739A (ko) 2019-03-18 2021-10-28 램 리써치 코포레이션 극자외선 (Extreme Ultraviolet) 리소그래피 레지스트들의 거칠기 감소
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
JP7189375B2 (ja) 2020-01-15 2022-12-13 ラム リサーチ コーポレーション フォトレジスト接着および線量低減のための下層
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
US12222643B2 (en) * 2020-07-02 2025-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
KR102781895B1 (ko) 2020-07-07 2025-03-18 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR102797476B1 (ko) 2020-11-13 2025-04-21 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
KR102883286B1 (ko) * 2020-12-08 2025-11-10 램 리써치 코포레이션 유기 증기를 사용한 포토레지스트 현상
KR20230131941A (ko) * 2021-01-28 2023-09-14 엔테그리스, 아이엔씨. 유기주석 화합물을 제조하는 방법
JP7625723B2 (ja) * 2021-04-23 2025-02-03 インテグリス・インコーポレーテッド 低被曝線量のｅｕｖを照射するための高量子効率ドライレジスト
US20250059643A1 (en) * 2021-12-29 2025-02-20 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Tin-containing precursors for deposition of tin-containing thin films and their corresponding deposition processes
WO2024076218A1 (ko) * 2022-10-07 2024-04-11 솔브레인 주식회사 칼코게나이드계 박막 개질제, 이를 사용하여 제조된 반도체 기판 및 반도체 소자
JP2024097389A (ja) * 2023-01-06 2024-07-19 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
CN116410222B (zh) * 2023-06-09 2023-08-08 研峰科技(北京)有限公司 一种叔丁基三(二甲氨基)锡烷的合成方法
KR20250009842A (ko) * 2023-07-11 2025-01-20 광주과학기술원 건식 현상이 가능한 포토레지스트 조성물
US20250085627A1 (en) * 2023-09-12 2025-03-13 Inpria Corporation Organotin photoresist compositions having fluoride generator compounds, fluorinated organotin coatings and patterning

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SG153748A1 (en) * 2007-12-17 2009-07-29 Asml Holding Nv Lithographic method and apparatus
US9176377B2 (en) * 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
WO2014208104A1 (en) * 2013-06-27 2014-12-31 Toyo Gosei Co., Ltd. Reagent for enhancing generation of chemical species
KR102306612B1 (ko) * 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
KR20170132726A (ko) * 2015-04-01 2017-12-04 도레이 카부시키가이샤 감광성 수지 조성물, 도전성 패턴의 제조 방법, 기판, 터치패널 및 디스플레이
US9996004B2 (en) * 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
US11022879B2 (en) * 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
KR102226430B1 (ko) * 2017-12-19 2021-03-10 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
TWI814552B (zh) * 2018-04-05 2023-09-01 美商英培雅股份有限公司 錫十二聚物及具有強ｅｕｖ吸收的輻射可圖案化塗層
SG11202009703QA (en) * 2018-05-11 2020-10-29 Lam Res Corp Methods for making euv patternable hard masks
KR102207893B1 (ko) * 2018-05-25 2021-01-25 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102296818B1 (ko) * 2018-12-26 2021-08-31 삼성에스디아이 주식회사 반도체 레지스트용 조성물, 및 이를 이용한 패턴 형성 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
TWI867534B (zh) * 2022-07-12 2024-12-21 南韓商三星Ｓｄｉ股份有限公司 半導體光阻組成物及使用所述組成物形成圖案的方法
TWI890197B (zh) * 2022-11-15 2025-07-11 美商恩特葛瑞斯股份有限公司 官能化有機錫前驅物及相關方法

Also Published As

Publication number Publication date
US20230266664A1 (en) 2023-08-24
CN116171403A (zh) 2023-05-26
KR102846047B1 (ko) 2025-08-13
KR20230051770A (ko) 2023-04-18
JP2023535894A (ja) 2023-08-22
WO2022016127A1 (en) 2022-01-20

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