JP2023535894A - Ｓｎ（ｉｉ）前駆体からのフォトレジスト - Google Patents

Ｓｎ（ｉｉ）前駆体からのフォトレジスト Download PDF

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Publication number
JP2023535894A
JP2023535894A JP2023502907A JP2023502907A JP2023535894A JP 2023535894 A JP2023535894 A JP 2023535894A JP 2023502907 A JP2023502907 A JP 2023502907A JP 2023502907 A JP2023502907 A JP 2023502907A JP 2023535894 A JP2023535894 A JP 2023535894A
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film
euv
alkyl
radiation
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JP2023502907A
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English (en)
Japanese (ja)
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JPWO2022016127A5 (enExample
Inventor
ハンセン・エリック・カルヴィン
ウー・チェンガオ
ワイドマン・ティモシー・ウィリアム
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Lam Research Corp
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Lam Research Corp
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Publication of JP2023535894A publication Critical patent/JP2023535894A/ja
Publication of JPWO2022016127A5 publication Critical patent/JPWO2022016127A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2023502907A 2020-07-17 2021-07-16 Ｓｎ（ｉｉ）前駆体からのフォトレジスト Pending JP2023535894A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062705856P 2020-07-17 2020-07-17
US62/705,856 2020-07-17
PCT/US2021/042107 WO2022016127A1 (en) 2020-07-17 2021-07-16 Photoresists from sn(ii) precursors

Publications (2)

Publication Number Publication Date
JP2023535894A true JP2023535894A (ja) 2023-08-22
JPWO2022016127A5 JPWO2022016127A5 (enExample) 2024-07-23

Family

ID=79555034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023502907A Pending JP2023535894A (ja) 2020-07-17 2021-07-16 Ｓｎ（ｉｉ）前駆体からのフォトレジスト

Country Status (6)

Country Link
US (1) US20230266664A1 (enExample)
JP (1) JP2023535894A (enExample)
KR (1) KR102846047B1 (enExample)
CN (1) CN116171403A (enExample)
TW (1) TW202219632A (enExample)
WO (1) WO2022016127A1 (enExample)

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US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
WO2020132281A1 (en) 2018-12-20 2020-06-25 Lam Research Corporation Dry development of resists
US12125711B2 (en) 2019-03-18 2024-10-22 Lam Research Corporation Reducing roughness of extreme ultraviolet lithography resists
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
EP4651192A2 (en) 2020-01-15 2025-11-19 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12261044B2 (en) 2020-02-28 2025-03-25 Lam Research Corporation Multi-layer hardmask for defect reduction in EUV patterning
US12416863B2 (en) * 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
US12222643B2 (en) * 2020-07-02 2025-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
JP7382512B2 (ja) 2020-07-07 2023-11-16 ラム リサーチ コーポレーション 照射フォトレジストパターニングのための統合乾式プロセス
CN115598943A (zh) 2020-11-13 2023-01-13 朗姆研究公司（Us） 用于干法去除光致抗蚀剂的处理工具
US20230416606A1 (en) * 2020-12-08 2023-12-28 Lam Research Corporation Photoresist development with organic vapor
JP7684409B2 (ja) * 2021-01-28 2025-05-27 インテグリス・インコーポレーテッド 有機スズ化合物を調製する方法
JP7625723B2 (ja) 2021-04-23 2025-02-03 インテグリス・インコーポレーテッド 低被曝線量のｅｕｖを照射するための高量子効率ドライレジスト
CN118525110A (zh) * 2021-12-29 2024-08-20 乔治洛德方法研究和开发液化空气有限公司 用于沉积含锡薄膜的含锡前体及其相应的沉积方法
CN118159914A (zh) 2022-07-01 2024-06-07 朗姆研究公司 用于阻止蚀刻停止的金属氧化物基光致抗蚀剂的循环显影
KR102876476B1 (ko) * 2022-07-12 2025-10-23 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
WO2024076218A1 (ko) * 2022-10-07 2024-04-11 솔브레인 주식회사 칼코게나이드계 박막 개질제, 이를 사용하여 제조된 반도체 기판 및 반도체 소자
JP2025537025A (ja) * 2022-11-15 2025-11-12 インテグリス・インコーポレーテッド 官能化有機スズ前駆体及び関連する方法
JP2024097389A (ja) * 2023-01-06 2024-07-19 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
CN116410222B (zh) * 2023-06-09 2023-08-08 研峰科技(北京)有限公司 一种叔丁基三(二甲氨基)锡烷的合成方法
KR20250009842A (ko) * 2023-07-11 2025-01-20 광주과학기술원 건식 현상이 가능한 포토레지스트 조성물
US20250085627A1 (en) * 2023-09-12 2025-03-13 Inpria Corporation Organotin photoresist compositions having fluoride generator compounds, fluorinated organotin coatings and patterning

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JP2016529330A (ja) * 2013-06-27 2016-09-23 東洋合成工業株式会社 化学種の発生を向上させるための試剤
WO2016158864A1 (ja) * 2015-04-01 2016-10-06 東レ株式会社 感光性樹脂組成物、導電性パターンの製造方法、基板、タッチパネル及びディスプレイ
JP2017116923A (ja) * 2015-11-20 2017-06-29 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 蒸着金属酸化物含有ハードマスクのｅｕｖフォトパターニング
JP2021528676A (ja) * 2018-04-05 2021-10-21 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ スズ十二量体、及び強いｅｕｖ吸収を有する放射線パターニング可能なコーティング

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KR102226430B1 (ko) * 2017-12-19 2021-03-10 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
JP2021523403A (ja) 2018-05-11 2021-09-02 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ｅｕｖパターン化可能ハードマスクを形成するための方法
KR102207893B1 (ko) * 2018-05-25 2021-01-25 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102296818B1 (ko) * 2018-12-26 2021-08-31 삼성에스디아이 주식회사 반도체 레지스트용 조성물, 및 이를 이용한 패턴 형성 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016529330A (ja) * 2013-06-27 2016-09-23 東洋合成工業株式会社 化学種の発生を向上させるための試剤
WO2016158864A1 (ja) * 2015-04-01 2016-10-06 東レ株式会社 感光性樹脂組成物、導電性パターンの製造方法、基板、タッチパネル及びディスプレイ
JP2017116923A (ja) * 2015-11-20 2017-06-29 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 蒸着金属酸化物含有ハードマスクのｅｕｖフォトパターニング
JP2021528676A (ja) * 2018-04-05 2021-10-21 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ スズ十二量体、及び強いｅｕｖ吸収を有する放射線パターニング可能なコーティング

Also Published As

Publication number Publication date
TW202219632A (zh) 2022-05-16
CN116171403A (zh) 2023-05-26
KR20230051770A (ko) 2023-04-18
WO2022016127A1 (en) 2022-01-20
US20230266664A1 (en) 2023-08-24
KR102846047B1 (ko) 2025-08-13

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