TW202142740A - 蝕刻鉬之方法及組合物 - Google Patents
蝕刻鉬之方法及組合物 Download PDFInfo
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- TW202142740A TW202142740A TW110113342A TW110113342A TW202142740A TW 202142740 A TW202142740 A TW 202142740A TW 110113342 A TW110113342 A TW 110113342A TW 110113342 A TW110113342 A TW 110113342A TW 202142740 A TW202142740 A TW 202142740A
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 229960002433 cysteine Drugs 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- LFINSDKRYHNMRB-UHFFFAOYSA-N diazanium;oxido sulfate Chemical compound [NH4+].[NH4+].[O-]OS([O-])(=O)=O LFINSDKRYHNMRB-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- BJAJDJDODCWPNS-UHFFFAOYSA-N dotp Chemical compound O=C1N2CCOC2=NC2=C1SC=C2 BJAJDJDODCWPNS-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- SMSCVBBYKOFGCY-UHFFFAOYSA-M ethyl(triphenyl)phosphanium;hydroxide Chemical compound [OH-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC)C1=CC=CC=C1 SMSCVBBYKOFGCY-UHFFFAOYSA-M 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940097043 glucuronic acid Drugs 0.000 description 1
- 235000004554 glutamine Nutrition 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 229960002743 glutamine Drugs 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- XDDAORKBJWWYJS-UHFFFAOYSA-N glyphosate Chemical compound OC(=O)CNCP(O)(O)=O XDDAORKBJWWYJS-UHFFFAOYSA-N 0.000 description 1
- 229940097068 glyphosate Drugs 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 235000014304 histidine Nutrition 0.000 description 1
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- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 235000014705 isoleucine Nutrition 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
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- 239000001630 malic acid Substances 0.000 description 1
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- 235000006109 methionine Nutrition 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 229960004452 methionine Drugs 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 229940104873 methyl perfluorobutyl ether Drugs 0.000 description 1
- UJJUJHTVDYXQON-UHFFFAOYSA-N nitro benzenesulfonate Chemical group [O-][N+](=O)OS(=O)(=O)C1=CC=CC=C1 UJJUJHTVDYXQON-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 235000008729 phenylalanine Nutrition 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 229960005190 phenylalanine Drugs 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229960003975 potassium Drugs 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000001508 potassium citrate Substances 0.000 description 1
- 229960002635 potassium citrate Drugs 0.000 description 1
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 1
- 235000011082 potassium citrates Nutrition 0.000 description 1
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 235000011083 sodium citrates Nutrition 0.000 description 1
- 229960001922 sodium perborate Drugs 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- FDDDEECHVMSUSB-UHFFFAOYSA-N sulfanilamide Chemical compound NC1=CC=C(S(N)(=O)=O)C=C1 FDDDEECHVMSUSB-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- 125000005497 tetraalkylphosphonium group Chemical group 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- ZOMVKCHODRHQEV-UHFFFAOYSA-M tetraethylphosphanium;hydroxide Chemical compound [OH-].CC[P+](CC)(CC)CC ZOMVKCHODRHQEV-UHFFFAOYSA-M 0.000 description 1
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 description 1
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- CRUVUWATNULHFA-UHFFFAOYSA-M tetramethylphosphanium;hydroxide Chemical compound [OH-].C[P+](C)(C)C CRUVUWATNULHFA-UHFFFAOYSA-M 0.000 description 1
- OORMKVJAUGZYKP-UHFFFAOYSA-M tetrapropylphosphanium;hydroxide Chemical compound [OH-].CCC[P+](CCC)(CCC)CCC OORMKVJAUGZYKP-UHFFFAOYSA-M 0.000 description 1
- 235000008521 threonine Nutrition 0.000 description 1
- 229960002898 threonine Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- LDGFRUUNCRYSQK-UHFFFAOYSA-N triazin-4-ylmethanediamine Chemical compound NC(N)C1=CC=NN=N1 LDGFRUUNCRYSQK-UHFFFAOYSA-N 0.000 description 1
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 description 1
- 150000003627 tricarboxylic acid derivatives Chemical class 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- BJAARRARQJZURR-UHFFFAOYSA-N trimethylazanium;hydroxide Chemical compound O.CN(C)C BJAARRARQJZURR-UHFFFAOYSA-N 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Weting (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
本發明描述一種用於以一定蝕刻速率,自微電子裝置蝕刻鉬之蝕刻劑組合物及方法。使微電子裝置與蝕刻劑組合物接觸足以至少部分移除鉬之時間。該蝕刻劑組合物包含至少一種氧化劑、至少一種氧化劑穩定劑及至少一種鹼且具有7.5至13之pH。該蝕刻劑組合物以5至200 Å/min之蝕刻速率選擇性移除鉬。
Description
本發明係關於一種用於相對於其他金屬組分(諸如氮化鈦(TiN))及絕緣體材料(即,低k介電質)選擇性蝕刻鉬或基於鉬之合金之組合物及方法。更特定言之,本發明描述以30至200 Å/min之目標蝕刻速率移除鉬之具有高pH之蝕刻劑組合物。
通常,使用鎢及基於鎢之材料作為3D-NAND製造中之電極。然而,已發現鎢材料對各種蝕刻劑組合物敏感。例如,在使用W電極之方法中,發現用於電極絕緣之包括磷酸及硝酸之酸性組合物(所謂之「W凹槽」)引起鎢層之部分蝕刻。
目前,3D-NAND結構在記憶體裝置中發現實用性。為在記憶體性能中達成較佳效用,3D-NAND製造商已研究在記憶體裝置中可導致極佳性能之其他材料。特定言之,許多3D-NAND製造商已用鉬替換W層。因此,製造商需可選擇性移除凹槽中之Mo而不移除TiN之蝕刻劑組合物。可以一定蝕刻速率選擇性移除鉬,使得各凹槽在可控蝕刻條件下達成大體上相同之目標蝕刻深度之蝕刻劑組合物特別受關注。
本發明大體上係關於一種用於自微電子裝置選擇性移除鉬之蝕刻劑組合物及方法。有利地,該蝕刻劑組合物以足以在3D-NAND裝置之含Mo凹槽中高效且有效達成大體上一致蝕刻深度之蝕刻速率移除鉬。
在一項實施例中,本發明係關於一種用於移除鉬之蝕刻劑組合物。該組合物包含至少一種氧化劑、至少一種氧化劑穩定劑、至少一種鹼,及水。該蝕刻劑組合物不含氨或氫氧化銨且具有7.5至12之pH。在此pH下,及在包括氧化劑穩定劑之情況下,該蝕刻劑組合物以5至200 Å/min之蝕刻速率移除鉬。
在另一實施例中,本發明係關於一種以目標蝕刻速率自微電子裝置移除鉬之方法。該方法包括使該微電子裝置與蝕刻劑組合物接觸足以自該微電子裝置至少部分移除鉬之時間。該蝕刻劑組合物包含至少一種氧化劑、至少一種氧化劑穩定劑、至少一種鹼及水。該蝕刻劑組合物不含氨或氫氧化銨且具有7.5至12之pH。該方法進一步包括以5至200 Å/min之蝕刻速率蝕刻鉬。
自隨後之揭示內容及隨附申請專利範圍將更完全顯而易見其他態樣、特徵及優點。已發現此蝕刻劑組合物可達成鉬之足夠可控蝕刻而不過度蝕刻,而同時提供選擇性以在其他金屬組分(特別TiN)之存在下移除鉬。此相容性及蝕刻控制在(例如) 3D-NAND裝置之製造中具有相當大的益處。
本發明大體上係關於適用於自其上具有鉬及含鉬材料之微電子裝置移除此等材料之水性或半水性組合物。該等組合物特別適用於在TiN之存在下選擇性移除鉬。
為便於參考,「微電子裝置」對應於經製造以用於微電子、積體電路、能量收集或電腦晶片應用中之半導體基板、平面顯示器、相變記憶體裝置、太陽電池板及包括太陽電池裝置、光伏打及微機電系統(MEMS)之其他產品。特別較佳之微電子係3D-NAND裝置。應瞭解,術語「微電子裝置」、「微電子基板」及「微電子裝置結構」非意欲以任何方式限制且包括將最終變為微電子裝置或微電子總成之任何基板或結構。
微電子裝置包含含鉬材料。如本文使用,基於材料之總重量,「含鉬材料」及「鉬」包括包含大於50重量%元素鉬之任何材料。含鉬材料之實例包括(但不限於)純鉬(Mo)及合金或含有鉬之混合物。例如,已知在製造微電子裝置期間沈積之鉬亦可含有鋁(Mo-Al)或鈦(Mo-Ti),一般少於5重量%,及「鉬」將包括此等材料。熟習此項技術者應瞭解,各種鉬物種之化學式可基於鉬離子之氧化態變化,其中鉬之常見氧化態為-3、-1、+1、+2、+3、+4、+5或+6。
如本文使用,「氮化鈦」及「TiNx
」對應於純氮化鈦及包括變化之化學計量,及含氧量(TiOx
Ny
)之不純氮化鈦。
如本文定義,「低k介電材料」對應於用作層狀微電子裝置中之介電材料之任何材料,其中該材料具有小於約3.5之介電常數。較佳地,該等低k介電材料包括低極性材料諸如含矽有機聚合物、含矽混合有機/無機材料、有機矽酸鹽玻璃(OSG)、TEOS、氟化矽酸鹽玻璃(FSG)、二氧化矽及碳摻雜氧化物(CDO)玻璃。應知曉該等低k介電材料可具有變化之密度及變化之孔隙率。
如本文定義,「金屬導體層」或「金屬層」包含銅、鎢、鈷、鋁、釕,包含其等之合金,及其組合。
「大體上不含」在本文中定義為小於2重量%,較佳小於1重量%,更佳小於0.5重量%,及最佳小於0.1重量%。在一項實施例中,「大體上不含」對應於零百分比,指示該組合物不含特定組分。
如本文使用,「約」意欲對應於規定值之± 5 %。
如下文中更充分描述,本文描述之組合物可以多種特定調配物體現。
在所有此等組合物中,其中該組合物之特定組分係參考包括零下限之重量百分比範圍加以討論,應瞭解該組合物之各種特定實施例中可存在或缺乏此等組分,且在存在此等組分之情況下,基於其中採用此等組分之組合物之總重量,該等組分可以低至0.001重量%之濃度存在。
在整個本說明書之描述及申請專利範圍中,措辭「包含(comprise)」及「含有」及該等措辭之變化例如「包含(comprising)」及「包含(comprises)」意謂「包括(但不限於)」且不排除其他組分、整數或步驟。然而,使用該措辭「包含」之所有地方,亦明確包含其中將「包含」解讀成「由……構成」或「基本上由……構成」之實施例。
本文中,除非內文另有要求,否則單數包含複數。特定言之,在使用不定冠詞之情況下,除非內文另有要求,否則本說明書應瞭解為考慮複數及單數。
本發明之各態樣之較佳特徵可如結合其他態樣中之任一者描述。於本申請案之範圍內,明確預期,前述段落、申請專利範圍及/或下列說明書及圖式中闡述之各種態樣、實施例、實例及替代方案,及特定言之其個別特徵可獨立地或以任何組合使用。即,所有實施例及/或任何實施例之特徵可以任何方式及/或組合進行組合,除非此等特徵不相容。
本發明係關於一種用於自微電子裝置,特別自該裝置之高縱橫比區域選擇性移除鉬之蝕刻劑組合物及方法。用於此裝置之典型基於水之鉬蝕刻劑組合物已包括氧化劑且已維持在低pH (即,小於7)下。發明人在大量研究後已確定,在此等酸性氧化條件下,將待移除之鉬區域氧化為MoOx
(諸如MoO4 -2
)。基於相圖分析,確定使此等物種有效溶解於水性酸性組合物中非常困難,導致蝕刻速率降低。水性鹼性調配物將較佳,其等可有效移除氧化鉬層或防止形成氧化鉬層。然而,在高pH條件下,將預期許多氧化劑(包括過氧化氫)分解,減少可用氧化劑之量,且相應地,降低蝕刻劑組合物之有效性。
因此,為自微電子裝置可控蝕刻基於鉬之材料,本發明之一項實施例係關於一種包含至少一種氧化劑、至少一種氧化劑穩定劑及至少一種鹼,由其等構成或基本上由其等構成之蝕刻劑組合物。該蝕刻劑組合物可為水性或半水性且具有7.5至13之pH。已意外發現,高pH蝕刻劑組合物中包括氧化劑穩定劑防止氧化劑顯著分解並提供以可控制在5至200 Å/min之間的蝕刻速率自微電子裝置之高縱橫比區域移除鉬之高效且有效組合物。以大於200 Å/min之蝕刻速率移除Mo之蝕刻劑組合物將非所欲的,特別對於高縱橫比區域(此等具有3D-NAND結構之凹槽),因為難以控制達成一致地自各凹槽移除Mo及所需蝕刻深度(諸如20至30 nm)。小於5 Å/min之蝕刻速率將需顯著更長之蝕刻時間,此將導致3D-NAND製造方法低效。較佳地,鉬蝕刻速率為10至100 Å/min且更佳10至40 Å/min。
本發明之蝕刻劑組合物中之至少一種氧化劑可為任何可氧化鉬以產生組合物可溶性鉬物種,較佳在鹼性pH條件下可溶之物種。合適氧化劑之實例包括(但不限於)過氧化氫(H2
O2
)、FeCl3
、FeF3
、Fe(NO3
)3
、Sr(NO3
)2
、CoF3
、MnF3
、過一硫酸氫鉀(oxone)、(2KHSO5
KHSO4
K2
SO4
)、硝酸(HNO3
)、過氧單硫酸氫銨、亞氯酸銨(NH4
ClO2
)、氯酸銨(NH4
ClO3
)、碘酸銨(NH4
IO3
)、硝酸銨(NH4
NO3
)、過硼酸銨(NH4
BO3
)、過氯酸銨(NH4
ClO4
)、過碘酸銨(NH4
IO4
)、過硫酸銨((NH4
)2
S2
O8
)、次氯酸銨(NH4
ClO)、鎢酸銨((NH4
)10
H2
(W2
O7
))、過硫酸鈉(Na2
S2
O8
)、次氯酸鈉(NaClO)、過硼酸鈉、碘酸鉀(KIO3
)、過錳酸鉀(KMnO4
)、過硫酸鉀(K2
S2
O8
)、次氯酸鉀(KClO)、四甲基亞氯酸銨((N(CH3
)4
)ClO2
)、四甲基氯酸銨((N(CH3
)4
)ClO3
)、四甲基碘酸銨((N(CH3
)4
)IO3
)、四甲基過硼酸銨((N(CH3
)4
)BO3
)、四甲基過氯酸銨((N(CH3
)4
)ClO4
)、四甲基過碘酸銨((N(CH3
)4
)IO4
)、四甲基過硫酸銨((N(CH3
)4
)S2
O8
)、四丁基過氧單硫酸氫銨、過氧單硫酸、過氧化氫脲((CO(NH2
)2
)H2
O2
)、過乙酸(CH3
(CO)OOH)、第三丁基過氧化氫、硝基苯磺酸鹽、1,4-苯醌、甲醌、二甲基-1,4-苯醌、氯醌(chloranil)、四氧嘧啶(alloxan)、過碘酸,及其組合。較佳地,該氧化劑包含過氧化氫、過氧化氫脲、過硫酸銨、過碘酸、過乙酸或第三丁基過氧化氫。
氧化劑之含量可為有效自微電子裝置移除鉬(特別在其他金屬層之存在下)之任何量。特定言之,該蝕刻劑組合物可包含約0.1重量%至約5重量%之氧化劑。較佳地,氧化劑之量係約0.1重量%至約2重量%,且更佳地,約0.1至約1重量%。在與微電子裝置接觸前,該氧化劑可直接引入組合物內或可製備成氧化劑溶液之一部分,並接著與其餘組分組合。後者藉由將曝露於鹼性條件之時間量最小化,進一步防止該氧化劑分解。
蝕刻劑組合物進一步包含至少一種鹼以使該組合物之pH達成至少7.5。較佳地,該組合物之pH係7.5至13及更佳8至11。合適鹼之實例包括(但不限於)鹼金屬氫氧化物、鹼土金屬氫氧化物、四烷基氫氧化銨(諸如四甲基氫氧化銨(TMAH)、四乙基氫氧化銨(TEAH)、四丙基氫氧化銨(TPAH)及四丁基氫氧化銨(TBAH))、三丁基甲基氫氧化銨(TBMAH)、苯甲基三甲基氫氧化銨(BTMAH)、氫氧化膽鹼、乙基三甲基氫氧化銨、參(2-羥乙基)甲基氫氧化銨、二乙基二甲基氫氧化銨、四烷基氫氧化鏻(諸如四丁基氫氧化鏻(TBPH)、四甲基氫氧化鏻、四乙基氫氧化鏻及四丙基氫氧化鏻)、苯甲基三苯基氫氧化鏻、甲基三苯基氫氧化鏻、乙基三苯基氫氧化鏻、N-丙基三苯基氫氧化鏻,及其組合。較佳地,該鹼包含TMAH或氫氧化膽鹼。
本文描述之蝕刻劑組合物可及較佳大體上不含氨或氫氧化銨。更佳地,該蝕刻劑組合物不含氨及氫氧化銨。此等鹼儘管有效使pH上升至所需水準,但存在嚴重健康及環境問題,且將顯著增加處理及減輕此等問題之成本。
鹼之含量可為有效提供及/或維持鹼性pH水準之任何量。特定言之,蝕刻劑組合物可包含約0.1重量%至約10重量%之鹼。較佳地,鹼之量係約0.1重量%至約8重量%,且更佳地,約0.1至約5重量%。
本發明之蝕刻劑組合物進一步包含至少一種氧化劑穩定劑。如本文使用,「氧化劑穩定劑」或「穩定劑」包括彼等防止或減少氧化劑(諸如過氧化氫)分解(此分解減少其作為氧化劑之有效性)之化合物。氧化劑穩定劑可在氧化劑前或與氧化劑組合添加至該蝕刻劑組合物。合適之氧化劑穩定劑包括(但不限於)甘胺酸、絲胺酸、脯胺酸、白胺酸、丙胺酸、天冬醯胺酸、天冬胺酸、麩醯胺酸、纈胺酸及離胺酸、氮基三乙酸、亞胺二乙酸、艾提壯酸(etidronic acid)、乙二胺四乙酸(EDTA)、(1,2-伸環己基二氮基)四乙酸(CDTA)、尿酸、四乙二醇二甲醚、二乙三胺五乙酸、丙二胺四乙酸、乙二胺二琥珀酸、胺苯磺醯胺,及其組合。較佳地,該氧化劑穩定劑包含CDTA或EDTA。
不希望受任何理論束縛,據信氧化劑穩定劑有效移除或另外捕獲由於移除鉬材料產生之金屬雜質。例如,如上文討論,該鉬可包括少量(諸如以ppm水準計)另外金屬物種(諸如Ti之Al)。已知此等金屬引起氧化劑(諸如過氧化氫),特別在高pH下分解。據信穩定劑結合此等金屬,藉此減少氧化劑降解之量。下文更詳細討論,出於此原因,儘管該穩定劑可以有效提供氧化劑之增加之穩定性及減少之分解之任何量存在,但該氧化劑穩定劑一般以小於任何錯合劑之量存在。例如,該蝕刻劑組合物可包含約0.0001重量%至約1.0重量%之氧化劑穩定劑。較佳地,穩定劑之量係約0.0005重量%至約0.5重量%,且更佳地,約0.001重量%至約0.1重量%。
除上文討論之組分外,本發明之蝕刻劑組合物可進一步包含視需要選用之另外組分,由其等構成,或基本上由其等構成,存在該等視需要選用之另外組分以進一步改良及/或增強組合物自微電子裝置選擇性移除鉬之性能。例如,該蝕刻劑組合物可進一步包含至少一種金屬腐蝕抑制劑、至少一種錯合劑及/或至少一種溶劑。
金屬腐蝕抑制劑可用於在移除鉬層期間保護微電子裝置上存在之金屬層。該金屬腐蝕抑制劑可包含一或多種腐蝕抑制劑,由其等構成,或基本上由其等構成,該等腐蝕抑制劑包括(但不限於) 5-胺基四唑、5-苯基-苯并三唑、1H-四唑-5-乙酸、1-苯基-2-四唑啉-5-硫酮、苯并咪唑、甲基四唑、吡唑、5-胺基-1,3,4-噻二唑-2-硫醇(ATDT)、苯并三唑(BTA)、1,2,4-三唑(TAZ)、1,2,3-三唑、甲苯基三唑、5-甲基-苯并三唑(mBTA)、5-苯基-苯并三唑、5-硝基-苯并三唑、苯并三唑羧酸、3-胺基-5-巰基-1,2,4-三唑、1-胺基-1,2,4-三唑、羥基苯并三唑、2-(5-胺基-戊基)-苯并三唑、1-胺基-1,2,3-三唑、1-胺基-5-甲基-1,2,3-三唑、3-胺基-1,2,4-三唑(3-ATA)、3-巰基-1,2,4-三唑、3-異丙基-1,2,4-三唑、5-苯基硫醇-苯并三唑、鹵基-苯并三唑(鹵基= F、Cl、Br或I)、萘三唑、2-巰基苯并咪唑(MBI)、2-巰基苯并噻唑、4-甲基-2-苯基咪唑、2-巰基噻唑啉、5-胺基-1,2,4-三唑(5-ATA)、3-胺基-5-巰基-1,2,4-三唑、戊四唑、5-苯基-1H-四唑、5-苯甲基-1H-四唑、2,4-二胺基-6-甲基-1,3,5-三嗪、噻唑、三嗪、甲基四唑、1,3-二甲基-2-咪唑啶酮、1,5-五亞甲基四唑、1-苯基-5-巰基四唑、二胺基甲基三嗪、咪唑啉硫酮、4-甲基-4H-1,2,4-三唑-3-硫醇、4-胺基-4H-1,2,4-三唑、3-胺基-5-甲基硫基-1H-1,2,4-三唑、苯并噻唑、咪唑、吲唑、腺嘌呤、腺苷、哢唑,及其組合。較佳地,該金屬腐蝕抑制劑包含甲苯基三唑。
視需要選用之金屬腐蝕抑制劑含量可為有效防止金屬層腐蝕,尤其在高pH下,且不顯著影響鉬之蝕刻速率之任何量。因此,蝕刻劑組合物中腐蝕抑制劑之量係提供基本上抑制劑獨立之Mo蝕刻速率之量。特定言之,當使用時,該蝕刻劑組合物可包含約0.001重量%至約1.0重量%之腐蝕抑制劑。較佳地,腐蝕抑制劑之量係約0.05重量%至約0.5重量%,且更佳地,約0.01至約0.10重量%。
如本文使用,「錯合劑」包括彼等熟習此項技術者瞭解為錯合劑、螯合劑及/或鉗合劑之化合物。錯合劑將與待使用本文中描述之組合物自微電子裝置移除之鉬原子及/或離子化學組合或將其等物理保持,以改良此材料之蝕刻速率。合適之錯合劑包括(但不限於)胺基乙基乙醇胺、N-甲基胺基乙醇、胺基乙氧基乙醇、二甲基胺基乙氧基乙醇、二乙醇胺、N-甲基二乙醇胺、單乙醇胺(MEA)、三乙醇胺(TEA)、1-胺基-2-丙醇、2-胺基-1-丁醇、異丁醇胺、三乙二胺、4-(2-羥乙基)嗎啉(HEM)、乙二胺四乙酸(EDTA)、間苯二甲胺(MXDA)、亞胺二乙酸(IDA)、2-(羥乙基)亞胺二乙酸(HIDA)、氮基三乙酸、硫脲、1,1,3,3-四甲基脲、脲、脲衍生物、尿酸、丙胺酸、精胺酸、天冬醯胺酸、天冬胺酸、半胱胺酸、麩胺酸、麩醯胺酸、組胺酸、異白胺酸、白胺酸、離胺酸、甲硫胺酸、苯基丙胺酸、脯胺酸、絲胺酸、蘇胺酸、色胺酸、酪胺酸、纈胺酸、1-羥基亞乙基-1,1-二膦酸(HEDP)、1,5,9-三氮雜環十二烷-N,N',N"-參(亞甲基膦酸) (DOTRP)、1,4,7,10-四氮雜環十二烷-N,N',N",N'"-肆(亞甲基膦酸) (DOTP)、氮基參(亞甲基)三膦酸、二乙三胺五(亞甲基膦酸) (DETAP)、胺基三(亞甲基膦酸)、雙(六亞甲基)三胺五亞甲基膦酸、1,4,7-三氮雜環壬烷-N,N',N"-參(亞甲基膦酸(NOTP)、羥乙基二膦酸酯、氮基參(亞甲基)膦酸、2-膦醯基-丁烷-1,2,3,4-四羧酸、羧乙基膦酸、胺基乙基膦酸、草甘膦、乙二胺肆(亞甲基膦酸)苯基膦酸、草酸、琥珀酸、馬來酸、蘋果酸、丙二酸、己二酸、鄰苯二甲酸、乳酸、檸檬酸、檸檬酸鈉、檸檬酸鉀、檸檬酸銨、丙三羧酸、三羥甲基丙酸、酒石酸、葡萄糖醛酸、2-羧基吡啶、4,5-二羥基-1,3-苯二磺酸二鈉鹽,及其組合。較佳地,該錯合劑包含1-羥基亞乙基-1,1-二膦酸(HEDP)、乳酸或檸檬酸。
視需要選用之錯合劑含量可為有效改良鉬之蝕刻速率之任何量。例如,當使用蝕刻劑組合物時,其可包含約0.1重量%至約20重量%之錯合劑。較佳地,錯合劑之量係約0.5重量%至約15重量%,且更佳地,約1.0至約10重量%。
如上文討論,本發明蝕刻劑組合物可為水性組合物或可為半水性組合物。因此,在一些實施例中,該蝕刻劑組合物包含水而無另外溶劑,而在其他實施例中,該蝕刻劑組合物進一步包含水及至少一種水溶性或水混溶性有機溶劑。包括至少一種溶劑與水之組合可以另外改良該蝕刻劑組合物,諸如改良所得蝕刻鉬表面之平面性。合適溶劑包括(例如)甲醇、乙醇、異丙醇、丁醇、戊醇、己醇、2-乙基-1-己醇、庚醇、辛醇、乙二醇、丙二醇、丁二醇、碳酸丁烯酯、碳酸乙烯酯、碳酸丙烯酯、二丙二醇、二乙二醇單甲醚、三乙二醇單甲醚、二乙二醇單乙醚、三乙二醇單乙醚、乙二醇單丙醚、乙二醇單丁醚、二乙二醇單丁醚、三乙二醇單丁醚、乙二醇單己醚、二乙二醇單己醚、乙二醇苯醚、丙二醇甲醚、二丙二醇甲醚(DPGME)、三丙二醇甲醚(TPGME)、二丙二醇二甲醚、二丙二醇乙醚、丙二醇正丙醚、二丙二醇正丙醚(DPGPE)、三丙二醇正丙醚、丙二醇正丁基醚、二丙二醇正丁基醚、三丙二醇正丁基醚、丙二醇苯醚、2,3-二氫十氟戊烷、乙基全氟丁基醚、甲基全氟丁基醚、碳酸烷基酯、碳酸伸烷基酯、4-甲基-2-戊醇,及其組合。較佳地,該至少一種溶劑包含丙二醇。當使用溶劑時,其含量可佔總溶劑之約10重量%至約90重量%,較佳總溶劑之約30重量%至約85重量%,及更佳總溶劑之約50重量%至約85重量%之量,其餘為水。
在本發明之蝕刻劑組合物之一實施例中,該組合物包含至少一種氧化劑、至少一種氧化劑穩定劑、至少一種鹼及水,由其等構成,或基本上由其等構成,以該組合物總重量計,其含量在以下列範圍:
組分 | 重量% | 較佳重量% | 更佳重量% |
氧化劑 | 約0.1重量%至約5重量% | 約0.1重量%至約2重量% | 約0.1重量%至約 1重量% |
氧化劑穩定劑 | 約0.0001重量%至約1重量% | 約0.0005重量%至約0.5重量% | 約0.001重量%至約 0.1重量% |
鹼 | 約0.1重量%至約10重量% | 約0.1wt%至約 8重量% | 約0.1重量%至約 5重量% |
水 | 約84重量%至約99.8重量% | 約89.5重量%至約 99.8重量% | 約93.9重量%至約99.8重量% |
將知曉常見實務為製造使用前待稀釋之組合物之濃縮形式。例如,該組合物可以更濃縮之形式製造且此後在工廠處使用前及/或期間,在製造商處用至少一種溶劑稀釋。稀釋比率可在約0.1份稀釋劑:1份組合物濃縮物至約100份稀釋劑:1份組合物濃縮物之範圍內。應進一步知曉,本文描述之組合物包括可經時不穩定之氧化劑。因此,該濃縮形式可大體上不含氧化劑且可在工廠處使用前及/或期間,由製造商將該氧化劑引入該濃縮或稀釋之組合物內。
本文描述之蝕刻劑組合物係藉由簡單添加個別組分並混合至均質條件容易調配。此外,該等組合物可容易調配成在使用時或使用前混合之單包裝調配物或多部分調配物,較佳多部分調配物。該多部分調配物之個別部分可於工具處或在混合區域/範圍(諸如在線混合器)中或在該工具上游之儲存槽中混合。經考慮,該多部分調配物之各種部分可含有當混合在一起時形成所需組合物之組分/成分之任何組合。個別組分之濃度可在組合物之特定倍數內廣泛變化,即,更稀或更濃,且應知曉該等組合物可不同且替代地包含與本文揭示內容一致之組分之任何組合,由其等構成或基本上由其等構成。實例
由下列非限制性實例更充分闡述本發明之蝕刻劑組合物之特徵及優點,其中除非另有明確規定,否則所有份數及百分比均以重量計。顯示高pH蝕刻劑組合物特別適用於以5至200 Å/min之蝕刻速率自微電子裝置選擇性移除鉬。
蝕刻劑組合物係藉由使用TEAH作為滴定儀將氧化劑及錯合劑組合調節至目標pH來製備。在室溫下將該混合物攪拌15 min以提供澄清溶液。
在30℃下將具有Mo層之試片在含有組合物之浴中放置15 min。量測移除之Mo之量,且亦測定此等組合物之TiN蝕刻速率。
蝕刻劑組合物及其等相應之蝕刻速率顯示於下表1中。表 1
此等組合物中之各者包括1重量%之氧化劑及0.01重量%之CDTA作為氧化劑穩定劑。
實例 | 氧化劑 | 錯合劑 | 鹼 | pH | Mo蝕刻速率 (Å/min) | TiN蝕刻速率 (Å/min) |
1 | H2 O2 | 無 | TEAH | 9 | 130 | 0.01 |
2 | H2 O2 | 無 | TEAH | 11 | 89 | 0.01 |
3 | 脲-H2 O2 | 無 | TEAH | 9 | 10 | 0.2 |
4 | 脲-H2 O2 | 無 | TEAH | 11 | 11 | 0.1 |
5 | 過碘酸 | 無 | TEAH | 9 | 59 | 0.1 |
6 | 過碘酸 | 無 | TEAH | 11 | 34 | 1.8 |
7 | 過硫酸銨 | 無 | TEAH | 9 | 28 | 0.18 |
8 | 過硫酸銨 | 無 | TEAH | 11 | 19 | 0.32 |
9 | 過乙酸 | 無 | TEAH | 9 | 40 | 0.01 |
10 | 過乙酸 | 無 | TEAH | 11 | 26 | 0.98 |
11 | 第三丁基過氧化氫 | 無 | TEAH | 9 | 17 | 0.34 |
12 | 第三丁基過氧化氫 | 無 | TEAH | 11 | 15 | 0.2 |
13 | H2 O2 | 檸檬酸 | TEAH | 9 | 173 | 0.01 |
14 | H2 O2 | 檸檬酸 | TEAH | 11 | 171 | 0.01 |
15 | H2 O2 | 乳酸 | TEAH | 11 | 178 | 0.03 |
16 | H2 O2 | HEDP | TEAH | 11 | 152 | 0.01 |
如顯示,此等蝕刻劑組合物(其等包含至少一種氧化劑、至少一種氧化劑穩定劑及至少一種鹼,調節至7.5至13,較佳8至11之pH)中之各者以5至200 Å/min之蝕刻速率可控移除鉬。另外,相應之TiN蝕刻速率非常低,證實該蝕刻劑組合物移除Mo之選擇性。
儘管本文已參考說明性實施例及特徵不同地揭示本發明,但應知曉上文中描述之實施例及特徵無意限制本發明,且基於本文揭示內容,一般技術者應知曉其他變化、修飾及其他實施例。因此,本發明應廣義地解釋為包含於下文闡述之隨附申請專利範圍之精神及範圍內之所有此等變化、修飾及替代實施例。
Claims (10)
- 一種自微電子裝置移除鉬之蝕刻劑組合物,該蝕刻劑組合物包含: 至少一種氧化劑; 至少一種氧化劑穩定劑; 至少一種鹼;及 水, 其中該蝕刻劑組合物不含氨或氫氧化銨且具有7.5至13之pH。
- 如請求項1之蝕刻劑組合物,其中該蝕刻劑組合物包含約0.1重量%至約5重量%之該至少一種氧化劑。
- 如請求項1之蝕刻劑組合物,其中該至少一種氧化劑穩定劑包含選自由以下組成之群之物種:甘胺酸、絲胺酸、脯胺酸、白胺酸、丙胺酸、天冬醯胺酸、天冬胺酸、麩醯胺酸、纈胺酸及離胺酸、氮基三乙酸、亞胺二乙酸、艾提壯酸(etidronic acid)、乙二胺四乙酸(EDTA)、(1,2-伸環己基二氮基)四乙酸(CDTA)、尿酸、四乙二醇二甲醚、二乙三胺五乙酸、丙二胺四乙酸、乙二胺二琥珀酸、胺苯磺醯胺,及其組合。
- 如請求項1之蝕刻劑組合物,其中該蝕刻劑組合物包含約0.0001重量%至約1.0重量%之該至少一種氧化劑穩定劑。
- 如請求項1之蝕刻劑組合物,其中該蝕刻劑組合物包含約0.1重量%至約10重量%之該鹼。
- 如請求項1之蝕刻劑組合物,其中該蝕刻劑組合物具有介於8至11之間的pH。
- 如請求項1之蝕刻劑組合物,其中該蝕刻劑組合物進一步包含至少一種錯合劑。
- 如請求項1之蝕刻劑組合物,其中該蝕刻劑組合物進一步包含至少一種有機溶劑。
- 如請求項1之蝕刻劑組合物,其中該蝕刻劑組合物進一步包含至少一種金屬腐蝕抑制劑。
- 一種自微電子裝置移除鉬之方法,該方法包括: i)使該微電子裝置與蝕刻劑組合物接觸足以自該微電子裝置至少部分移除鉬之時間,該蝕刻劑組合物包含: 至少一種氧化劑; 至少一種氧化劑穩定劑;及 至少一種鹼及 ii)以5至200 Å/min之蝕刻速率蝕刻鉬, 其中該蝕刻劑組合物不含氨或氫氧化銨且具有7.5至13之pH。
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- 2021-04-14 CN CN202180032467.2A patent/CN115485417A/zh active Pending
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KR20220166348A (ko) | 2022-12-16 |
EP4136273A4 (en) | 2024-05-01 |
US20230030323A1 (en) | 2023-02-02 |
TWI789741B (zh) | 2023-01-11 |
EP4136273A1 (en) | 2023-02-22 |
WO2021211708A1 (en) | 2021-10-21 |
US20210324525A1 (en) | 2021-10-21 |
CN115485417A (zh) | 2022-12-16 |
JP7399314B2 (ja) | 2023-12-15 |
JP2023521828A (ja) | 2023-05-25 |
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