TW202141939A - 具有兩個互連射頻組件之射頻配置結構 - Google Patents
具有兩個互連射頻組件之射頻配置結構 Download PDFInfo
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Abstract
本發明之實施例提供一種射頻配置結構。該射頻配置結構包含一第一射頻組件、一第二射頻組件及一佈線基體,該佈線基體具有形成於該佈線基體中之一同軸射頻線路,其中該第一射頻組件與該第二射頻組件經由該同軸射頻線路連接。
Description
發明領域
本發明係有關於具有兩個互連射頻組件之射頻配置結構。
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發明概要
本發明之實施例係關於一種射頻配置結構,且特定而言,係關於一種包含兩個互連射頻組件之射頻配置結構。其他實施例係關於一種用於製造射頻配置結構之方法。
圖1展示根據[1]之習知射頻配置結構的示意性電路方塊圖,該配置結構包含兩個互連射頻組件(基頻板及天線板) 12及14。
如可在圖1中認識到,習知地,在設置行動通訊系統時,如例如基頻板、如基頻處理器之射頻組件12連同印刷電路板(PCB)上之其他電路與如例如天線板(通常為天線、RFIC等)之至少一個其他電子組件14之間的電氣連接係經由同軸電纜16及作為射頻連接(通常能夠處理60 GHz)之同軸端子實現的。圖2及圖3在此處展示根據[1]的實施為基頻封裝上系統之基頻板12的同軸端子18及天線板14之同軸端子20。
然而,在製造中,此習知射頻配置結構需要相對較高之製造成本。在相比於用於製造待連接之電子組件的習知使用的現代經高度整合之所謂的封裝內系統技術時,所使用同軸元件——插口及電纜——及至電子組件之各別金屬化平面的端子或連接之成本相當大。
因此,本發明之基礎目標為提供允許射頻組件之較便宜連接的概念。
此目標藉由獨立申請專利範圍達成。
有利的其他發展為附屬申請專利範圍之標的物。
實施例提供一種射頻配置結構。該射頻配置結構包含第一射頻組件、第二射頻組件及具有形成於佈線基體中之同軸射頻線路的佈線基體,第一射頻組件與第二射頻組件經由同軸射頻線路連接。
在實施例中,第一射頻組件為基頻板。
在實施例中,第二射頻組件為天線板。
在實施例中,同軸射頻線路包含至少一個內部導體及用於射頻屏蔽至少一個內部導體之至少一個外部導體,至少一個外部導體環繞至少一個內部導體,至少一個外部導體與至少一個內部導體彼此絕緣。
在實施例中,第一射頻組件之至少一個射頻信號端子經由至少一個內部導體連接至第二射頻組件之至少一個射頻信號端子,第一射頻組件之至少一個射頻屏蔽端子經由至少一個外部導體連接至第二射頻組件之至少一個射頻屏蔽端子。
在實施例中,至少一個內部導體在佈線基體中側向地穿過,使得至少一個內部導體平行於佈線基體的鄰近於第一射頻組件及第二射頻組件之表面配置,其中至少一個內部導體經由在佈線基體中豎直地穿過的至少兩個相互間隔之連接導體而導引至佈線基體之表面,其中至少兩個連接導體中之第一連接導體連接至第一射頻組件之至少一個射頻信號端子,其中至少兩個連接導體中之第二連接導體連接至第二射頻組件之至少一個射頻信號端子。
在實施例中,環繞至少一個內部導體之至少一個外部導體在至少兩個連接導體的區中敞開。
其他實施例提供一種行動無線電通訊裝置,其包含本文中/上文所描述之射頻配置結構。
其他實施例提供一種用於製造射頻配置結構的方法。該方法包含提供第一射頻組件。另外,該方法包含提供第二射頻組件。另外,該方法包含提供佈線基體,其具有形成於佈線基體中的同軸射頻線路。此外,該方法包含經由佈線基體連接第一射頻組件與第二射頻組件。
在實施例中,第一射頻組件為基頻板。
在實施例中,第二射頻組件為天線板。
在實施例中,同軸射頻線路包含至少一個內部導體及用於射頻屏蔽至少一個內部導體之至少一個外部導體,至少一個外部導體環繞至少一個內部導體,至少一個外部導體與至少一個內部導體彼此絕緣。
在實施例中,在經由佈線基體連接第一射頻組件與第二射頻組件時,第一射頻組件之至少一個射頻信號端子經由至少一個內部導體連接至第二射頻組件之至少一個射頻信號端子,其中,在經由佈線基體連接第一射頻組件與第二射頻組件時,第一射頻組件之至少一個射頻屏蔽端子經由至少一個外部導體連接至第二射頻組件之至少一個射頻屏蔽端子。
在實施例中,至少一個內部導體在佈線基體中側向地穿過,使得至少一個內部導體平行於佈線基體的鄰近於第一射頻組件及第二射頻組件之表面配置,其中至少一個內部導體經由在佈線基體中豎直地穿過的至少兩個相互間隔之連接導體而導引至佈線基體之表面,其中,在經由佈線基體連接第一射頻組件與第二射頻組件時,至少兩個連接導體中之第一連接導體連接至第一射頻組件之至少一個射頻信號端子,其中,在經由佈線基體連接第一射頻組件與第二射頻組件時,至少兩個連接導體中之第二連接導體連接至第二射頻組件之至少一個射頻信號端子。
在實施例中,提供佈線基體包含提供基體及在基體中形成同軸射頻線路。
其他實施例提供一種設備。該設備包含至少兩個電氣射頻組件,該等組件各自包含用於射頻信號之至少一個終端墊,且各自包含用於射頻屏蔽的至少一個外部導體之至少一個終端墊。另外,該設備包含佈線基體,佈線基體包含經屏蔽射頻傳輸線結構,該經屏蔽射頻傳輸線結構包含至少一個內部導體、至少一個外部導體、圍繞至少一個內部導體之絕緣體,及圍繞至少一個外部導體之絕緣體。另外,該設備在佈線基體中包含第一射頻組件之至少一個終端墊與經屏蔽射頻傳輸線結構之至少一個內部導體之間的至少一個導電連接。另外,該設備在佈線基體中包含第二射頻組件之至少一個終端墊與經屏蔽射頻傳輸線結構之至少一個外部導體之間的至少一個導電連接。
其他實施例提供一種用於連接至少兩個電氣射頻組件的方法。該方法包含提供至少兩個電氣射頻組件之步驟,該等組件各自包含用於射頻信號之至少一個終端墊,且各自包含用於射頻屏蔽的至少一個外部導體之至少一個終端墊。另外,該方法包含提供佈線基體之步驟。另外,該方法包含在佈線基體中製造經屏蔽射頻傳輸線結構之步驟,該經屏蔽射頻傳輸線結構包括至少一個內部導體、至少一個外部導體、圍繞至少一個內部導體之絕緣體,及圍繞至少一個外部導體之絕緣體。另外,該方法包含如下步驟:在佈線基體中製造第一射頻組件之至少一個終端墊與經屏蔽射頻傳輸線結構之至少一個內部導體之間的至少一個導電連接。另外,該方法包含如下步驟:在佈線基體中製造第二射頻組件之至少一個終端墊與經屏蔽射頻傳輸線結構之至少一個外部導體之間的至少一個導電連接。
本發明之實施例藉助於具有整合式傳輸線之佈線基體提供了組件之射頻電氣連接。
本發明之實施例提供了用於製造電子射頻系統,且特定而言用於行動通訊之所謂的高度整合封裝內系統的方法。
本發明之實施例經由具有整合式射頻傳輸線結構之特定佈線基體,及至射頻組件之金屬化平面的合適端子連接實現了至少兩個電氣射頻組件之電氣連接。
較佳實施例之詳細說明
圖4展示根據本發明之實施例的射頻配置結構100之示意性橫截面圖。射頻配置結構100包含第一射頻組件102、第二射頻組件104,及具有形成於佈線基體106中之同軸射頻線路108的佈線基體106,第一射頻組件102與第二射頻組件104經由同軸射頻線路108連接。
圖5展示根據本發明之另一實施例的射頻配置結構100之示意性橫截面圖。換言之,圖5展示實現形成於佈線基體106中之同軸射頻線路108的方式。
類似於圖4中出於比較目的例示性展示之習知同軸電纜60的情況,在實施例中,同軸射頻線路108可包含至少一個內部導體110及用於屏蔽(如射頻屏蔽)至少一個內部導體110之至少一個外部導體112,至少一個外部導體112環繞至少一個內部導體110,且至少一個外部導體112與至少一個內部導體112例如藉助於如例如介電質(如SiO2
)之絕緣體114彼此絕緣。另外,至少一個外部導體112亦可例如藉助於如例如介電質(如SiO2
)之絕緣體116而絕緣。
在實施例中,至少一個內部導體110可由如例如銅、銀或金之導電材料製成。
在實施例中,至少一個外部導體112可由如例如銅、銀或金之導電材料製成。較佳地,至少一個外部導體112可處於參考電位,如例如接地。
在實施例中,第一射頻組件102之至少一個射頻信號端子130可經由至少一個內部導體110連接至第二射頻組件104之至少一個射頻信號端子132,其中第一射頻組件102之至少一個射頻屏蔽端子143(及任擇地136)經由至少一個外部導體112連接至第二射頻組件104之至少一個射頻屏蔽端子138(及任擇地140)。
在實施例中,至少一個內部導體110可平行於佈線基體106的鄰近於第一射頻組件102及/或第二射頻組件104之表面142配置,其中至少一個內部導體110經由在佈線基體106中豎直地穿過的至少兩個相互間隔之連接導體而導引至佈線基體106之表面142,其中至少兩個連接導體中之第一連接導體連接至第一射頻組件102之至少一個射頻信號端子130,且其中至少兩個連接導體中之第二連接導體連接至第二射頻組件104之至少一個射頻信號端子132。
在實施例中,第一射頻組件102可為基頻板。
在實施例中,第二射頻組件104可為天線板。
換言之,圖5展示了藉助於具有整合式傳輸線108之佈線基體106實現的兩個組件102及104之射頻電氣連接的實例(在相比於具有內部導體(核心)、絕緣體及射頻屏蔽之習知同軸電纜120時)。
換言之,圖5展示根據本發明之實施例的設備100之示意圖。設備100包含至少兩個電氣射頻組件102及104,其各自包含用於射頻信號之至少一個終端墊130及132,且各自包含用於射頻屏蔽的至少一個外部導體112之至少一個終端墊134(及任擇地136)以及138(及任擇地140)。另外,設備100包含佈線基體106,佈線基體106包含經屏蔽射頻傳輸線結構108,該經屏蔽射頻傳輸線結構包含至少一個內部導體110、至少一個外部導體112、圍繞至少一個內部導體110之絕緣體114,及圍繞至少一個外部導體112之絕緣體116。另外,設備100在佈線基體106中包含第一射頻組件102之至少一個終端墊130與經屏蔽射頻傳輸線結構108之至少一個內部導體110之間的至少一個導電連接。另外,設備100在佈線基體106中包含第二射頻組件104之至少一個終端墊132與經屏蔽射頻傳輸線結構108之至少一個外部導體112之間的至少一個導電連接。
圖6展示根據實施例的來自圖5之射頻配置結構100的示意性橫截面圖160,及佈線基體106沿著垂直地穿過兩個射頻組件102與104之間的區中之同軸射頻線路108的截面平面150之示意性橫截面圖162。換言之,圖6展示實現同軸射頻線路108之方式的實施例。
如可在圖6中之橫截面圖162中認識到,同軸射頻線路108可包含內部導體110及外部導體112,外部導體112環繞內部導體110,外部導體112與內部導體112例如藉助於絕緣體114彼此絕緣,且外部導體112亦由絕緣體116環繞。
圖7展示圖5之射頻配置結構100的示意性橫截面圖160,佈線基體106沿著垂直地穿過第一射頻組件102之射頻屏蔽端子134之區中的同軸射頻線路108之截面平面152的示意性橫截面圖164,佈線基體106沿著垂直地穿過第一射頻組件102之射頻信號端子130之區中的同軸射頻線路108之截面圖154的示意性橫截面圖166,及在第一射頻組件102之區156中的佈線基體之俯視圖。換言之,圖7展示實現端子之方式的實施例。
如可在圖7中認識到,在實施例中,同軸射頻線路108之內部導體110可經由在佈線基體106中豎直地穿過之連接導體170 (參見橫截面圖166)而導引至佈線基體106之表面142(參見俯視圖168),以用於連接至第一射頻組件102之射頻信號端子130。在實施例中,同軸射頻線路108的環繞內部導體110之至少一個外部導體112可在豎直地穿過之連接導體170之區172中敞開。
如亦可在圖7中認識到,在實施例中,同軸射頻線路108之外部導體112可經由在佈線基體106中豎直地穿過之連接導體174(參見橫截面164)而導引至佈線基體106之表面142(參見俯視圖168),以用於連接至第一射頻組件102之屏蔽端子134。
圖8展示根據本發明之實施例的具有射頻配置結構100之行動無線電通訊系統(如3G、LTE或5G)的參與者180之示意性電路方塊圖。
參與者180可例如為行動終端裝置(使用者設備)或物聯網(IoT)節點。
圖9展示根據本發明之實施例的用於製造射頻配置結構100之方法200的流程圖。方法200包含提供第一射頻組件之步驟202。另外,該方法包含提供第二射頻組件之步驟204。另外,該方法包含提供具有形成於佈線基體中之同軸射頻線路的佈線基體之步驟206。另外,該方法包含經由佈線基體連接第一射頻組件與第二射頻組件之步驟208。
圖10展示根據實施例的用於連接至少兩個電氣射頻組件之方法220的流程圖。方法220包含提供至少兩個電氣射頻組件之步驟,該等組件各自包含用於射頻信號之至少一個終端墊且各自包含用於射頻屏蔽的至少一個外部導體之至少一個終端墊。另外,方法220包含提供佈線基體之步驟224。另外,方法220包含在佈線基體中製造經屏蔽射頻傳輸線結構之步驟226,該經屏蔽射頻傳輸線結構包括至少一個內部導體、至少一個外部導體、圍繞至少一個內部導體之絕緣體,及圍繞至少一個外部導體之絕緣體。另外,方法220包含步驟228:在佈線基體中製造第一射頻組件之至少一個終端墊與經屏蔽射頻傳輸線結構之至少一個內部導體之間的至少一個導電連接。另外,方法220包含步驟230:在佈線基體中製造第二射頻組件之至少一個終端墊與經屏蔽射頻傳輸線結構之至少一個外部導體之間的至少一個導電連接。
本文中所描述之實施例充當如例如行動通訊中之基頻板與天線板之組件之間的習知同軸連接的替代物。
本發明之實施例克服了經由習知同軸電纜進行連接之缺點,如描述之介紹中所描述。
本發明之實施例允許藉助於填入技術來高產地大批量製造多功能射頻模組。
儘管已結合設備描述了一些態樣,但應理解,此等態樣亦表示對應方法之描述,使得設備之區塊或元件亦應理解為對應方法步驟或方法步驟之特徵。類似地,結合方法步驟所描述或描述為方法步驟之態樣亦表示對應設備之對應區塊或細節或特徵的描述。可由如例如微處理器、可規劃電腦或電子電路之硬體設備(或使用硬體設備)來執行方法步驟中之一些或全部。在一些實施例中,最重要之方法步驟中的一些或若干可由此設備執行。
上述實施例僅表示本發明之原理的說明。顯然,本文中所描述之配置及細節的修改及變化對熟習此項技術者而言將顯而易見。因此,本發明意欲僅受以下申請專利範圍之範疇限制,而非受本文中使用對實施例之描述及論述呈現的特定細節限制。
參考文獻清單
[1] SystemPlus Report ©2018 by System Plus Consulting | Qualcomm WiGig60 GHz Chipset Smartphone Edition
12:射頻組件,基頻板
14:射頻組件,電子組件,天線板
16:同軸電纜
18,20:同軸端子
60,120:習知同軸電纜
100:射頻配置結構,設備
102:第一射頻組件
104:第二射頻組件
106:佈線基體
108:同軸射頻線路,整合式傳輸線
110:內部導體
112:外部導體
114,116:絕緣體
130,132:射頻信號端子,終端墊
134,136,138,140:射頻屏蔽端子,終端墊
142:表面
150,152:截面平面
154:截面圖
156,172:區
160,162,164,166:示意性橫截面圖
168:俯視圖
170,174:連接導體
180:參與者
200,220:方法
202,204,206,208,222,224,226,228,230:步驟
下文將參考附圖更詳細地描述本發明之實施例,在附圖中:
圖1 為根據[1]之習知射頻配置結構的示意性電路方塊圖,該配置結構包含兩個互連射頻組件(基頻板及天線板),
圖2 展示根據[1]的具有同軸端子插口之基頻板(基頻封裝上系統)的示意性橫截面圖,
圖3 展示根據[1]的具有同軸端子插口之天線板的示意圖,
圖4 展示根據本發明之實施例的射頻配置結構之示意性橫截面圖,
圖5 展示根據本發明之另一實施例的射頻配置結構之示意性橫截面圖,
圖6 展示根據實施例的圖5之射頻配置結構的示意性橫截面圖,及佈線基體沿著垂直地穿過兩個射頻組件之間的區中之同軸射頻線路的截面平面的示意性橫截面圖,
圖7 展示圖5之射頻配置結構的示意性橫截面圖,佈線基體沿著垂直地穿過第一射頻組件之射頻屏蔽端子之區中的同軸射頻線路之截面平面的示意性橫截面圖,佈線基體沿著垂直地穿過第一射頻組件之射頻信號端子之區中的同軸射頻線路之截面平面的示意性橫截面圖,及在第一射頻組件之區中的佈線基體之俯視圖,
圖8 展示根據本發明之實施例的具有射頻配置結構之行動無線電通訊系統之參與者的示意性電路方塊圖,
圖9 展示根據本發明之實施例的用於製造射頻配置結構之方法的流程圖,且
圖10 展示根據實施例的用於連接至少兩個電氣射頻組件之方法的流程圖。
在本發明實施例的以下描述中,相同元件或具有相同效應之元件在諸圖中具備相同附圖標記,使得其描述互相可互換。
100:射頻配置結構,設備
102:第一射頻組件
104:第二射頻組件
106:佈線基體
108:同軸射頻線路,整合式傳輸線
110:內部導體
112:外部導體
114,116:絕緣體
130,132:射頻信號端子,終端墊
134,136,138,140:射頻屏蔽端子,終端墊
142:表面
150:截面平面
160,162:示意性橫截面圖
Claims (15)
- 一種射頻配置結構,其包含: 一第一頻率組件, 一第二射頻組件,以及 一佈線基體,其具有形成於該佈線基體中之一同軸射頻線路, 其中該第一射頻組件與該第二射頻組件經由該同軸射頻線路連接。
- 如前述請求項之射頻配置結構, 其中該第一射頻組件為一基頻板。
- 如前述請求項中任一項之射頻配置結構, 其中該第二射頻組件為一天線板。
- 如前述請求項中任一項之射頻配置結構, 其中該同軸射頻線路包含至少一個內部導體,及用於射頻屏蔽該至少一個內部導體之至少一個外部導體, 其中該至少一個外部導體環繞該至少一個內部導體, 其中該至少一個外部導體與該至少一個內部導體彼此絕緣。
- 如請求項4之射頻配置結構, 其中該第一射頻組件之至少一個射頻信號端子經由該至少一個內部導體連接至該第二射頻組件之至少一個射頻信號端子, 其中該第一射頻組件之至少一個射頻屏蔽端子經由該至少一個外部導體連接至該第二射頻組件之至少一個射頻屏蔽端子。
- 如前述請求項之射頻配置結構, 其中該至少一個內部導體在該佈線基體中側向地穿過,使得該至少一個內部導體平行於該佈線基體的鄰近於該第一射頻組件及/或該第二射頻組件之一表面配置, 其中該至少一個內部導體經由在該佈線基體中豎直地穿過的至少兩個相互間隔之連接導體而導引至該佈線基體之該表面, 其中該至少兩個連接導體中之一第一連接導體連接至該第一射頻組件之該至少一個射頻信號端子, 其中該至少兩個連接導體中之一第二連接導體連接至該第二射頻組件之該至少一個射頻信號端子。
- 如前述請求項之射頻配置結構, 其中環繞該至少一個內部導體之該至少一個外部導體在該至少兩個連接導體之區中敞開。
- 一種一行動通訊系統之參與者, 其中該參與者包含如請求項1至7中任一項之射頻配置結構。
- 一種用於製造一射頻配置結構之方法,該方法包含: 提供一第一射頻組件, 提供一第二射頻組件, 提供一佈線基體,其具有形成於該佈線基體中之一同軸射頻線路,以及 經由該佈線基體連接該第一射頻組件與該第二射頻組件。
- 如前述請求項之方法, 其中該第一射頻組件為一基頻板。
- 如前述請求項中任一項之方法, 其中該第二射頻組件為一天線板。
- 如前述請求項中任一項之方法, 其中該同軸射頻線路包含至少一個內部導體,及用於射頻屏蔽該至少一個內部導體之至少一個外部導體, 其中該至少一個外部導體環繞該至少一個內部導體, 其中該至少一個外部導體與該至少一個內部導體彼此絕緣。
- 如前述請求項之方法, 其中,在經由該佈線基體連接該第一射頻組件與該第二射頻組件時,該第一射頻組件之至少一個射頻信號端子經由該至少一個內部導體連接至該第二射頻組件之至少一個射頻信號端子, 其中,在經由該佈線基體連接該第一射頻組件與該第二射頻組件時,該第一射頻組件之至少一個射頻屏蔽端子經由該至少一個外部導體連接至該第二射頻組件之至少一個射頻屏蔽端子。
- 如前述請求項之方法, 其中該至少一個內部導體在該佈線基體中側向地穿過,使得該至少一個內部導體平行於該佈線基體的鄰近於該第一射頻組件及/或該第二射頻組件之一表面配置, 其中該至少一個內部導體經由在該佈線基體中豎直地穿過的至少兩個相互間隔之連接導體而導引至該佈線基體之該表面, 其中,在經由該佈線基體連接該第一射頻組件與該第二射頻組件時,該至少兩個連接導體中之一第一連接導體連接至該第一射頻組件之該至少一個射頻信號端子, 其中,在經由該佈線基體連接該第一射頻組件與該第二射頻組件時,該至少兩個連接導體中之一第二連接導體連接至該第二射頻組件之該至少一個射頻信號端子。
- 如前述請求項中任一項之方法, 其中提供該佈線基體包含: 提供一基體, 在該基體中形成該同軸射頻線路。
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JP3877132B2 (ja) * | 2000-11-20 | 2007-02-07 | 富士通株式会社 | 多層配線基板及び半導体装置 |
DE10216873A1 (de) * | 2002-04-17 | 2003-11-13 | Infineon Technologies Ag | Kontaktierbare integrierte Schaltung und Verfahren zur Herstellung einer solchen Schaltung |
US20060145350A1 (en) * | 2004-12-30 | 2006-07-06 | Harald Gross | High frequency conductors for packages of integrated circuits |
US7973239B2 (en) | 2007-03-20 | 2011-07-05 | Sumitomo Electric Industries, Ltd. | Ultrafine-coaxial-wire harness, connecting method thereof, circuit-board-connected body, circuit-board module, and electronic apparatus |
US8963794B2 (en) * | 2011-08-23 | 2015-02-24 | Apple Inc. | Distributed loop antennas |
JP2014217014A (ja) * | 2013-04-30 | 2014-11-17 | 株式会社東芝 | 無線装置 |
US9059490B2 (en) | 2013-10-08 | 2015-06-16 | Blackberry Limited | 60 GHz integrated circuit to printed circuit board transitions |
US9537199B2 (en) * | 2015-03-19 | 2017-01-03 | International Business Machines Corporation | Package structure having an integrated waveguide configured to communicate between first and second integrated circuit chips |
US10319689B2 (en) * | 2015-12-01 | 2019-06-11 | Nxp Usa, Inc. | Antenna assembly for wafer level packaging |
WO2018063261A1 (en) * | 2016-09-29 | 2018-04-05 | Qian Zhiguo | Die interconnect structures and methods |
US11211345B2 (en) * | 2017-06-19 | 2021-12-28 | Intel Corporation | In-package RF waveguides as high bandwidth chip-to-chip interconnects and methods for using the same |
US10833414B2 (en) * | 2018-03-02 | 2020-11-10 | Samsung Electro-Mechanics Co., Ltd. | Antenna apparatus and antenna module |
JP7187821B2 (ja) * | 2018-05-29 | 2022-12-13 | Tdk株式会社 | プリント配線板およびその製造方法 |
US10727190B2 (en) * | 2018-12-27 | 2020-07-28 | Tektronix, Inc. | Compound via RF transition structure in a multilayer high-density interconnect |
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TWI791204B (zh) | 2023-02-01 |
EP3886160A1 (de) | 2021-09-29 |
KR20230127958A (ko) | 2023-09-01 |
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