CN113453417A - 具有两个互连的射频组件的射频装置 - Google Patents

具有两个互连的射频组件的射频装置 Download PDF

Info

Publication number
CN113453417A
CN113453417A CN202110322982.6A CN202110322982A CN113453417A CN 113453417 A CN113453417 A CN 113453417A CN 202110322982 A CN202110322982 A CN 202110322982A CN 113453417 A CN113453417 A CN 113453417A
Authority
CN
China
Prior art keywords
radio frequency
frequency component
wiring substrate
inner conductor
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110322982.6A
Other languages
English (en)
Inventor
彼得·拉姆
约瑟夫·韦伯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of CN113453417A publication Critical patent/CN113453417A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/0243Printed circuits associated with mounted high frequency components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • H04B1/50Circuits using different frequencies for the two directions of communication
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B11/00Communication cables or conductors
    • H01B11/18Coaxial cables; Analogous cables having more than one inner conductor within a common outer conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0219Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
    • H05K1/0221Coaxially shielded signal lines comprising a continuous shielding layer partially or wholly surrounding the signal lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6605High-frequency electrical connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6605High-frequency electrical connections
    • H01L2223/6616Vertical connections, e.g. vias
    • H01L2223/6622Coaxial feed-throughs in active or passive substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6661High-frequency adaptations for passive devices
    • H01L2223/6677High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/07Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081Disposition
    • H01L2224/0812Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/08225Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/07Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081Disposition
    • H01L2224/0812Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/08225Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/08235Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bonding area connecting to a via metallisation of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15192Resurf arrangement of the internal vias
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • H05K1/141One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10098Components for radio transmission, e.g. radio frequency identification [RFID] tag, printed or non-printed antennas

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Burglar Alarm Systems (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Transceivers (AREA)

Abstract

本发明的实施例提供了一种射频装置。该射频装置包括第一射频组件、第二射频组件和布线基板,该布线基板具有形成在布线基板上的同轴射频线,其中,第一射频组件和第二射频组件经由同轴射频线进行连接。

Description

具有两个互连的射频组件的射频装置
技术领域
本发明的实施例涉及一种射频装置,具体地涉及一种包括两个互连的射频组件的射频装置。进一步的实施例涉及一种用于制造射频装置的方法。
背景技术
图1示出了根据[1]的包括两个互连的射频组件(基带板和天线板)12和14在内的常规射频装置的示意性电路框图。
如图1所示,通常,当建立移动通信系统时,经由同轴电缆16和同轴端子将射频组件12(诸如基带板,例如,与PCB(印刷电路板)上的其他电路一起的基带处理器)与至少一个其他电子组件14(诸如天线板(通常为天线、RFIC等))之间的电连接实现为射频连接(通常能够处理60GHz)。这里的图2和图3示出了根据[1]的实现为基带系统级封装的基带板12的同轴端子18和20以及天线板14。
然而,在生产中,这种常规的射频装置需要相对较高的制造成本。当与用于制造要连接的电子组件的常规使用的现代高度集成的所谓的系统级封装技术相比,使用的同轴元件(插座和电缆)以及到电子组件的相应金属化平面的端子或连接的成本相当可观。
发明内容
因此,本发明所基于的目的是提供一种允许廉价地连接射频组件的构思。
该目的通过独立权利要求来实现。
有利的进一步的发展是从属权利要求的主题。
实施例提供了一种射频装置。该射频装置包括第一射频组件、第二射频组件和布线基板,该布线基板具有形成在布线基板上的同轴射频线,第一射频组件和第二射频组件经由同轴射频线进行连接。
在实施例中,第一射频组件是基带板。
在实施例中,第二射频组件是天线板。
在实施例中,同轴射频线包括至少一个内部导体、和用于射频屏蔽至少一个内部导体的至少一个外部导体,至少一个外部导体围绕至少一个内部导体,至少一个外部导体和至少一个内部导体彼此绝缘。
在实施例中,第一射频组件的至少一个射频信号端子经由至少一个内部导体与第二射频组件的至少一个射频信号端子连接,第一射频组件的至少一个射频屏蔽端子经由至少一个外部导体与第二射频组件的至少一个射频屏蔽端子连接。
在实施例中,至少一个内部导体在布线基板中横向穿过,使得至少一个内部导体与布线基板的与第一射频组件和/或第二射频组件相邻的表面平行布置,其中,至少一个内部导体经由在布线基板中竖直穿过的至少两个相互隔开的连接导体而被引导到布线基板的表面,其中,至少两个连接导体中的第一连接导体与第一射频组件的至少一个射频信号端子连接,其中,至少两个连接导体中的第二连接导体与第二射频组件的至少一个射频信号端子连接。
在实施例中,围绕至少一个内部导体的至少一个外部导体在至少两个连接导体的区域中是打开的。
进一步的实施例提供了一种移动无线电通信设备,该移动无线电通信设备包括本文/上面描述的射频装置。
进一步的实施例提供了一种用于制造射频装置的方法。该方法包括提供第一射频组件。此外,该方法包括提供第二射频组件。此外,该方法包括提供布线基板,该布线基板具有形成在布线基板中的同轴射频线。此外,该方法包括经由布线基板来连接第一射频组件和第二射频组件。
在实施例中,第一射频组件是基带板。
在实施例中,第二射频组件是天线板。
在实施例中,同轴射频线包括至少一个内部导体和用于射频屏蔽至少一个内部导体的至少一个外部导体,至少一个外部导体围绕至少一个内部导体,至少一个外部导体和至少一个内部导体彼此绝缘。
在实施例中,当经由布线基板来连接第一射频组件和第二射频组件时,第一射频组件的至少一个射频信号端子经由至少一个内部导体与第二射频组件的至少一个射频信号端子连接,其中,当经由布线基板来连接第一射频组件和第二射频组件时,第一射频组件的至少一个射频屏蔽端子经由至少一个外部导体与第二射频组件的至少一个射频屏蔽端子连接。
在实施例中,至少一个内部导体在布线基板中横向穿过,使得至少一个内部导体与布线基板的与第一射频组件和第二射频组件相邻的表面平行布置,其中,至少一个内部导体经由在布线基板中竖直穿过的至少两个相互隔开的连接导体而被引导到布线基板的表面,其中,当经由布线基板来连接第一射频组件和第二射频组件时,至少两个连接导体中的第一连接导体与第一射频组件的至少一个射频信号端子连接,其中,当经由布线基板来连接第一射频组件和第二射频组件时,至少两个连接导体中的第二连接导体与第二射频组件的至少一个射频信号端子连接。
在实施例中,提供布线基板包括提供基板并在该基板中形成同轴射频线。
进一步的实施例提供了一种设备。该设备包括至少两个电射频组件,每个电射频组件包括用于射频信号的至少一个端子焊盘,并且每个电射频组件包括用于射频屏蔽的至少一个外部导体的至少一个端子焊盘。此外,该设备包括布线基板,该布线基板包括屏蔽的射频传输线结构,该屏蔽的射频传输线结构包括至少一个内部导体、至少一个外部导体、围绕至少一个内部导体的绝缘体、以及围绕至少一个外部导体的绝缘层。此外,该设备包括在第一射频组件的至少一个端子焊盘与布线基板中的屏蔽的射频传输线结构的至少一个内部导体之间的至少一个导电连接。此外,该设备包括在第二射频组件的至少一个端子焊盘与布线基板中的屏蔽的射频传输线结构的至少一个外部导体之间的至少一个导电连接。
进一步的实施例提供了一种用于连接至少两个电射频组件的方法。该方法包括提供至少两个电射频组件的步骤,每个电射频组件包括用于射频信号的至少一个端子焊盘,并且每个电射频组件包括用于射频屏蔽的至少一个外部导体的至少一个端子焊盘。此外,该方法包括提供布线基板的步骤。此外,该方法包括生产屏蔽的射频传输线结构的步骤,该屏蔽的射频传输线结构包括在布线基板中的至少一个内部导体、至少一个外部导体、围绕至少一个内部导体的绝缘体、以及围绕至少一个外部导体的绝缘体。此外,该方法包括在第一射频组件的至少一个端子焊盘与布线基板中的屏蔽的射频传输线结构的至少一个内部导体之间产生至少一个导电连接的步骤。此外,该方法包括在第二射频组件的至少一个端子焊盘与布线基板中的屏蔽的射频传输线结构的至少一个外部导体之间产生至少一个导电连接的步骤。
本发明的实施例借助于具有集成传输线的布线基板来提供组件的射频电连接。
本发明的实施例提供了一种用于制造电子射频系统的方法,特别是用于制造用于移动通信的高度集成的所谓的系统级封装的方法。
本发明的实施例经由特定布线基板实现了至少两个电射频组件的电连接,该特定布线基板具有集成的射频传输线结构和到射频组件的金属化平面的合适的端子连接。
附图说明
下面将参考附图更详细地描述本发明的实施例,在附图中:
图1是根据[1]的包括两个互连的射频组件(基带板和天线板)在内的常规射频装置的示意性电路框图,
图2示出了根据[1]的具有同轴端子插座的基带板(基带系统级封装)的示意性截面图,
图3示出了根据[1]的具有同轴端子插座的天线板的示意图,
图4示出了根据本发明的实施例的射频装置的示意性截面图,
图5示出了根据本发明的另一实施例的射频装置的示意性截面图,
图6示出了根据实施例的图5的射频装置的示意性截面图,以及沿着在两个射频组件之间的区域中垂直穿过同轴射频线的截面的布线基板106的示意性截面图,
图7示出了图5的射频装置的示意性截面图,沿着在第一射频组件的射频屏蔽端子的区域中垂直穿过同轴射频线的截面的布线基板的示意性截面图,沿着在第一射频组件的射频信号端子的区域中垂直穿过同轴射频线的截面图的布线基板的示意性截面图,以及在第一射频组件的区域中的布线基板的俯视图,
图8示出了根据本发明的实施例的具有射频装置的移动无线电通信系统的参与方的示意性电路框图,
图9示出了根据本发明的实施例的用于制造射频装置的方法的流程图,以及
图10示出了根据实施例的用于连接至少两个电射频组件的方法的流程图。
具体实施方式
在本发明的实施例的以下描述中,在附图中,相同的元件或效果相同的元件设置有相同的附图标记,使得它们的描述可以互换。
图4示出了根据本发明的实施例的射频装置100的示意性截面图。射频装置100包括第一射频组件102、第二射频组件104和布线基板106,布线基板106具有形成在布线基板106中的同轴射频线108,第一射频组件102和第二射频组件104经由同轴射频线108进行连接。
图5示出了根据本发明的另一实施例的射频装置100的示意性截面图。换句话说,图5示出了实现形成在布线基板106中的同轴射频线108的方式。
与在图4中出于比较目的而示例性地示出的常规同轴电缆60的情况一样,在实施例中,同轴射频线108可以包括至少一个内部导体110和用于屏蔽(诸如射频屏蔽)至少一个内部导体110的至少一个外部导体112,至少一个外部导体112围绕至少一个内部导体110,并且至少一个外部导体112和至少一个内部导体110例如借助于绝缘体114(例如电介质(诸如SiO2))而彼此绝缘。另外,至少一个外部导体112也可以例如借助于绝缘体116(例如电介质(诸如SiO2))而被绝缘。
在实施例中,至少一个内部导体110可以由导电材料(例如,铜、银或金)制成。
在实施例中,至少一个外部导体112可以由导电材料(例如,铜、银或金)制成。优选地,至少一个外部导体112可以处于参考电位,例如,接地。
在实施例中,第一射频组件102的至少一个射频信号端子130可以经由至少一个内部导体110与第二射频组件104的至少一个射频信号端子132连接,其中,第一射频组件102的至少一个射频屏蔽端子134(和可选的136)经由至少一个外部导体112与第二射频组件104的至少一个射频屏蔽端子138(和可选的140)连接。
在实施例中,至少一个内部导体110可以与布线基板106的与第一射频组件102和/或第二射频组件104相邻的表面142平行地布置,其中,至少一个内部导体110经由布线基板106中的竖直穿过的至少两个相互间隔的连接导体而被引导到布线基板106的表面142,其中,至少两个连接导体中的第一连接导体与第一射频组件102的至少一个射频信号端子130连接,以及其中,至少两个连接导体中的第二连接导体与第二射频组件104的至少一个射频信号端子132连接。
在实施例中,第一射频组件102可以是基带板。
在实施例中,第二射频组件104可以是天线板。
换句话说,图5示出了两个组件102和104借助于具有集成传输线108(当与具有内部导体(芯部)、绝缘体和射频屏蔽的常规同轴电缆120相比时)的布线基板106进行射频电连接的示例。
换句话说,图5示出了根据本发明的实施例的设备100的示意图。设备100包括至少两个电射频组件102和104,电射频组件各自包括用于射频信号的至少一个端子焊盘130和132并且各自包括用于射频屏蔽的至少一个外部导体112的至少一个端子焊盘134(和可选的136)和138(和可选的140)。此外,设备100包括布线基板106,该布线基板106包括屏蔽的射频传输线结构108,该屏蔽的射频传输线结构108包括至少一个内部导体110、至少一个外部导体112、围绕至少一个内部导体110的绝缘体114、以及围绕至少一个外部导体112的绝缘层116。此外,设备100包括第一射频组件102的至少一个端子焊盘130与布线基板106中的屏蔽的射频传输线结构108的至少一个内部导体110之间的至少一个导电连接。此外,设备100包括第二射频组件104的至少一个端子焊盘132与布线基板106中的屏蔽的射频传输线结构108的至少一个外部导体112之间的至少一个导电连接。
图6示出了根据实施例的来自图5的射频装置100的示意性截面图160,以及沿着在两个射频组件102和104之间的区域中垂直穿过同轴射频线108的截面150的布线基板106的示意性截面图162。换句话说,图6示出了实现同轴射频线108的方式的实施例。
如图6的截面图162所示,同轴射频线108可以包括内部导体110和外部导体112,外部导体112围绕内部导体110,外部导体112和内部导体110例如借助于绝缘体114而彼此绝缘,并且绝缘体116也围绕外部导体112。
图7示出了图5的射频装置100的示意性截面图160,沿着在第一射频组件102的射频屏蔽端子134的区域中垂直穿过同轴射频线108的截面152的布线基板106的示意性截面图164,沿着在第一射频组件102的射频信号端子130的区域中垂直穿过同轴射频线108的截面图154的布线基板106的示意性截面图166,以及在第一射频组件102的区域156中的布线基板的俯视图。换句话说,图7示出了实现端子的方式的实施例。
如图7所示,在实施例中,同轴射频线108的内部导体110可以被引导到布线基板106的表面142(参见俯视图168)以用于经由在布线基板106中竖直穿过的连接导体170(参见截面图166)与第一射频组件102的射频信号端子130连接。在实施例中,同轴射频线108的围绕内部导体110的至少一个外部导体112可以在竖直穿过的连接导体170的区域172中是打开的。
还如图7所示,在实施例中,同轴射频线108的外部导体112可以被引导到布线基板106的表面142(参见俯视图168)以用于经由在布线基板106中竖直穿过的连接导体174(参见截面164)与第一射频组件102的屏蔽端子134连接。
图8示出了根据本发明的实施例的具有射频装置100的移动无线电通信系统(例如,3G、LTE或5G)的参与方180的示意性电路框图。
参与方180可以例如是移动终端设备(用户设备)或IoT(物联网)节点。
图9示出了根据本发明的实施例的用于制造射频装置100的方法200的流程图。方法200包括提供第一射频组件的步骤202。此外,该方法包括提供第二射频组件的步骤204。此外,该方法包括步骤206:提供具有形成在布线基板中的同轴射频线的布线基板。此外,该方法包括步骤208:经由布线基板来连接第一射频组件和第二射频组件。
图10示出了根据实施例的用于连接至少两个电射频组件的方法220的流程图。方法220包括提供至少两个电射频组件的步骤,电射频组件各自包括用于射频信号的至少一个端子焊盘并且各自包括用于射频屏蔽的至少一个外部导体的至少一个端子焊盘。此外,方法220包括提供布线基板的步骤224。此外,方法220包括生产屏蔽的射频传输线结构的步骤226,该屏蔽的射频传输线结构包括在布线基板中的至少一个内部导体、至少一个外部导体、围绕至少一个内部导体的绝缘体、以及围绕至少一个外部导体的绝缘体。此外,方法220包括步骤228:在第一射频组件的至少一个端子焊盘与布线基板中的屏蔽的射频传输线结构的至少一个内部导体之间产生至少一个导电连接。此外,方法220包括步骤230:在第二射频组件的至少一个端子焊盘与布线基板中的屏蔽的射频传输线结构的至少一个外部导体之间产生至少一个导电连接。
例如,本文描述的实施例用作组件(例如,移动通信中的基带板和天线板)之间的常规同轴连接的替代。
如在描述的开头部分所述,本发明的实施例克服了经由常规同轴电缆进行连接的缺点。
本发明的实施例允许借助于填充(populating)技术来高生产率地大规模生产多功能射频模块。
尽管已经结合设备描述了一些方面,但是应当理解的是,这些方面也表示对相应方法的描述,使得设备的块或元件也被理解为对应的方法步骤或方法步骤的特征。类比地,结合方法步骤描述或被描述为方法步骤的方面也表示对对应设备的对应块或细节或特征的描述。一些或全部方法步骤可以由硬件设备(或使用硬件设备)来执行,例如微处理器、可编程计算机或电子电路。在一些实施例中,最重要的方法步骤中的某一些或数个可以由这种设备来执行。
上述实施例仅表示对本发明的原理的说明。清楚的是,本文所述的装置和细节的修改和变形对于本领域其他技术人员将是显而易见的。因此,本发明旨在仅由所附权利要求的范围来限制,而非使用对实施例的描述和讨论所已经提出的具体细节来限制。
参考文献列表
[1]SystemPlus Report
Figure BDA0002992583510000091
2018by System Plus Consulting|Qualcomm WiGig60GHz Chipset Smartphone Edition。

Claims (15)

1.一种射频装置(100),包括:
第一射频组件(102),
第二射频组件(104),以及
布线基板(106),具有形成在所述布线基板(106)上的同轴射频线(108),
其中,所述第一射频组件(102)和所述第二射频组件(104)经由所述同轴射频线(108)进行连接。
2.根据权利要求1所述的射频装置(100),
其中,所述第一射频组件(102)是基带板。
3.根据权利要求1所述的射频装置(100),
其中,所述第二射频组件(104)是天线板。
4.根据权利要求1所述的射频装置(100),
其中,所述同轴射频线(108)包括至少一个内部导体(110)和用于射频屏蔽所述至少一个内部导体(110)的至少一个外部导体(112),
其中,所述至少一个外部导体(112)围绕所述至少一个内部导体(110),
其中,所述至少一个外部导体(112)和所述至少一个内部导体(110)彼此绝缘。
5.根据权利要求4所述的射频装置(100),
其中,所述第一射频组件(102)的至少一个射频信号端子(130)经由所述至少一个内部导体(110)与所述第二射频组件(104)的至少一个射频信号端子(132)连接,
其中,所述第一射频组件(102)的至少一个射频屏蔽端子(134、136)经由所述至少一个外部导体(112)与所述第二射频组件(104)的至少一个射频屏蔽端子(138、140)连接。
6.根据权利要求5所述的射频装置(100),
其中,所述至少一个内部导体(110)在所述布线基板(106)中横向穿过,使得所述至少一个内部导体(110)与所述布线基板(106)的与所述第一射频组件(102)和/或所述第二射频组件(104)相邻的表面(142)平行布置,
其中,所述至少一个内部导体(110)经由在所述布线基板(106)中竖直穿过的至少两个相互隔开的连接导体(170)而被引导到所述布线基板(106)的表面(142),
其中,所述至少两个连接导体(170)中的第一连接导体与所述第一射频组件(102)的至少一个射频信号端子(130)连接,
其中,所述至少两个连接导体(170)中的第二连接导体与所述第二射频组件(104)的至少一个射频信号端子(132)连接。
7.根据权利要求6所述的射频装置(100),
其中,围绕所述至少一个内部导体(110)的所述至少一个外部导体(112)在所述至少两个连接导体(170)的区域(172)中是打开的。
8.一种移动通信系统的参与方,
其中,所述参与方包括根据权利要求1所述的射频装置(100)。
9.一种用于制造射频装置(100)的方法(200),所述方法包括:
提供(202)第一射频组件(102),
提供(204)第二射频组件(104),
提供(206)布线基板(106),所述布线基板(106)具有形成在所述布线基板(106)中的同轴射频线(108),以及
经由所述布线基板(106)来连接(210)所述第一射频组件(104)。
10.根据权利要求9所述的方法(200),
其中,所述第一射频组件(102)是基带板。
11.根据权利要求9所述的方法(200),
其中,所述第二射频组件(104)是天线板。
12.根据权利要求9所述的方法(200),
其中,所述同轴射频线(108)包括至少一个内部导体(110)和用于射频屏蔽所述至少一个内部导体(110)的至少一个外部导体(112),
其中,所述至少一个外部导体(112)围绕所述至少一个内部导体(110),
其中,所述至少一个外部导体(112)和所述至少一个内部导体(110)彼此绝缘。
13.根据权利要求12所述的方法(200),
其中,当经由所述布线基板(106)连接(208)所述第一射频组件(102)和所述第二射频组件(104)时,所述第一射频组件(102)的至少一个射频信号端子(130)经由所述至少一个内部导体(110)与所述第二射频组件(104)的至少一个射频信号端子(132)连接,
其中,当经由所述布线基板(106)连接(208)所述第一射频组件(102)和所述第二射频组件(104)时,所述第一射频组件(102)的至少一个射频屏蔽端子(134、136)经由所述至少一个外部导体(112)与所述第二射频组件(104)的至少一个射频屏蔽端子(138、140)连接。
14.根据权利要求13所述的方法(200),
其中,所述至少一个内部导体(110)在所述布线基板(106)中横向穿过,使得所述至少一个内部导体(110)与所述布线基板(106)的与所述第一射频组件(102)和/或所述第二射频组件(104)相邻的表面(142)平行布置,
其中,所述至少一个内部导体(110)经由在所述布线基板(106)中竖直穿过的至少两个相互隔开的连接导体(170)而被引导到所述布线基板(106)的表面(142),
其中,当经由所述布线基板(106)连接(208)所述第一射频组件(102)和所述第二射频组件(104)时,所述至少两个连接导体(170)中的第一连接导体与所述第一射频组件(102)的至少一个射频信号端子(130)连接,
其中,当经由所述布线基板(106)连接(208)所述第一射频组件(102)和所述第二射频组件(104)时,所述至少两个连接导体(170)中的第二连接导体与所述第二射频组件(104)的至少一个射频信号端子(132)连接。
15.根据权利要求9所述的方法(200),
其中,提供(206)所述布线基板(106)包括:
提供基板,
在所述基板中形成所述同轴射频线(108)。
CN202110322982.6A 2020-03-26 2021-03-25 具有两个互连的射频组件的射频装置 Pending CN113453417A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102020203971.2A DE102020203971A1 (de) 2020-03-26 2020-03-26 Hochfrequenzanordnung mit zwei miteinander verbundenen Hochfrequenzkomponenten
DE102020203971.2 2020-03-26

Publications (1)

Publication Number Publication Date
CN113453417A true CN113453417A (zh) 2021-09-28

Family

ID=75223108

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110322982.6A Pending CN113453417A (zh) 2020-03-26 2021-03-25 具有两个互连的射频组件的射频装置

Country Status (6)

Country Link
US (1) US20210307158A1 (zh)
EP (1) EP3886160A1 (zh)
KR (2) KR20210120889A (zh)
CN (1) CN113453417A (zh)
DE (1) DE102020203971A1 (zh)
TW (1) TWI791204B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114916133A (zh) * 2022-05-20 2022-08-16 维沃移动通信有限公司 柔性电路板和电子设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090101408A1 (en) * 2007-03-20 2009-04-23 Keiji Koyama Ultrafine-coaxial-wire harness, connecting method thereof, circuit-board-connected body, circuit-board module, and electronic apparatus
CN107431064A (zh) * 2015-03-19 2017-12-01 国际商业机器公司 具有用于封装组件之间的高速通信的集成波导的封装结构
WO2018236336A1 (en) * 2017-06-19 2018-12-27 Intel Corporation RF WAVEGUIDES IN A HOUSING AS INTERCONNECTIONS BETWEEN BANDWIDTH OF BAND AND METHODS OF USING THE SAME

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3877132B2 (ja) * 2000-11-20 2007-02-07 富士通株式会社 多層配線基板及び半導体装置
DE10216873A1 (de) * 2002-04-17 2003-11-13 Infineon Technologies Ag Kontaktierbare integrierte Schaltung und Verfahren zur Herstellung einer solchen Schaltung
US20060145350A1 (en) * 2004-12-30 2006-07-06 Harald Gross High frequency conductors for packages of integrated circuits
US8963794B2 (en) * 2011-08-23 2015-02-24 Apple Inc. Distributed loop antennas
JP2014217014A (ja) * 2013-04-30 2014-11-17 株式会社東芝 無線装置
US9059490B2 (en) 2013-10-08 2015-06-16 Blackberry Limited 60 GHz integrated circuit to printed circuit board transitions
US10319689B2 (en) * 2015-12-01 2019-06-11 Nxp Usa, Inc. Antenna assembly for wafer level packaging
WO2018063261A1 (en) * 2016-09-29 2018-04-05 Qian Zhiguo Die interconnect structures and methods
US10833414B2 (en) * 2018-03-02 2020-11-10 Samsung Electro-Mechanics Co., Ltd. Antenna apparatus and antenna module
JP7187821B2 (ja) * 2018-05-29 2022-12-13 Tdk株式会社 プリント配線板およびその製造方法
US10727190B2 (en) * 2018-12-27 2020-07-28 Tektronix, Inc. Compound via RF transition structure in a multilayer high-density interconnect

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090101408A1 (en) * 2007-03-20 2009-04-23 Keiji Koyama Ultrafine-coaxial-wire harness, connecting method thereof, circuit-board-connected body, circuit-board module, and electronic apparatus
CN107431064A (zh) * 2015-03-19 2017-12-01 国际商业机器公司 具有用于封装组件之间的高速通信的集成波导的封装结构
WO2018236336A1 (en) * 2017-06-19 2018-12-27 Intel Corporation RF WAVEGUIDES IN A HOUSING AS INTERCONNECTIONS BETWEEN BANDWIDTH OF BAND AND METHODS OF USING THE SAME

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114916133A (zh) * 2022-05-20 2022-08-16 维沃移动通信有限公司 柔性电路板和电子设备

Also Published As

Publication number Publication date
KR20210120889A (ko) 2021-10-07
TW202141939A (zh) 2021-11-01
US20210307158A1 (en) 2021-09-30
DE102020203971A1 (de) 2021-09-30
TWI791204B (zh) 2023-02-01
EP3886160A1 (de) 2021-09-29
KR20230127958A (ko) 2023-09-01

Similar Documents

Publication Publication Date Title
US6417747B1 (en) Low cost, large scale RF hybrid package for simple assembly onto mixed signal printed wiring boards
EP3442314A1 (en) Ic package
CN1953165A (zh) 引线插针、电路、半导体器件及形成引线插针的方法
US20160309576A1 (en) Module compliance boards for quad small form-factor pluggable (qsfp) devices
CN113451736A (zh) 具有正面和背面天线的射频装置
US9905918B2 (en) Electronic apparatus and land grid array module
CN102246364A (zh) 线缆连接器以及天线元件
US20240021970A1 (en) Printed circuit boards and methods for manufacturing thereof for RF connectivity between electro-optic phase modulator and Digital Signal Processor
KR20230127958A (ko) 두 개의 상호 연결된 무선 주파수 구성 요소를 갖는 무선 주파수 장치
US6541711B1 (en) Isolated ground circuit board apparatus
JP6623356B1 (ja) 電子部品の実装構造及び電子部品の実装方法
JP2004513474A (ja) 超小型、高速、同軸ピン相互接続システム
KR20060025516A (ko) Emi-영향받는 전자 컴포넌트 및/또는 전자 장치의회로를 위한 차폐물
JPS6016701A (ja) マイクロ波プリント板回路
CN109983621B (zh) 高频模块和通信设备
CN110459862B (zh) 一种基于槽辐射的毫米波网格阵列天线
US6700181B1 (en) Method and system for broadband transition from IC package to motherboard
CN112512209A (zh) 一种优化电容阻抗的pcb板及包括其的服务器
Huang et al. A low-profile RF wire-to-board connector design for millimeter wave applications
EP3249741B1 (en) Device for the connection between a strip line and a coaxial cable
US9949361B1 (en) Geometrically inverted ultra wide band microstrip balun
JP7245947B1 (ja) 印刷配線基板及び無線通信端末
KR102525796B1 (ko) 전자 장치
JP7133516B2 (ja) 信号伝送回路、電子制御装置
US20230231371A1 (en) Electromechanical assembly having integrated conductor

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination