TW202100693A - 背部研磨帶 - Google Patents
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Abstract
本發明提供一種耐熱性優異並且亦可適宜地用於高真空高溫製程之背部研磨帶。
本發明之背部研磨帶具備基材、及形成於該基材之一面之黏著劑層。該基材之彎曲剛性為0.2 N·mm2
以上,且波長400 nm下之透光率為10%以上,構成該基材之樹脂之熔點為200℃以上。
Description
本發明係關於一種背部研磨帶。
半導體晶圓係以大直徑狀態製造,於其正面形成圖案之後,對其背面進行研磨(背部研磨),而使晶圓之厚度通常減薄至40 μm~600 μm左右。繼而,進行用於調整半導體晶圓面之濕式蝕刻步驟,將所研磨之半導體晶圓切斷分離(切割)成元件小片後,將元件小片進一步移至安裝步驟,從而獲得所需之半導體元件。於背部研磨步驟中,為了固定半導體晶圓或保護與研磨面相反側之面,而使用黏著帶(背部研磨帶)(例如專利文獻1)。
於絕緣柵雙極電晶體(IGBT)等之製造製程中,為了提高器件之特性,存在進行背部研磨步驟直至厚度成為100 μm以下之情形。於研磨至此種薄型之情形時,使用輕剝離性紫外線硬化型黏著帶。半導體晶圓於進行背部研磨步驟後,將其供於去除抗蝕劑之灰化步驟。灰化步驟中,由於被置於高真空且200℃以上之高溫狀態下,因此,存在所使用之黏著帶之基材變形、或於半導體晶圓與黏著劑層之間產生剝層之情形。結果有可能產生平台上之吸附不良及黏著帶之剝離不良之問題。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2011-151163號公報
[發明所欲解決之問題]
本發明係為了解決上述先前之問題而完成者,其主要目的在於提供一種耐熱性優異並且亦可適宜地用於高真空高溫製程之背部研磨帶。
[解決問題之技術手段]
本發明之背部研磨帶具備基材、及形成於該基材之一面之黏著劑層。該基材之彎曲剛性為0.2 N·mm2
以上,且波長400 nm下之透光率為10%以上,構成該基材之樹脂之熔點為200℃以上。
於一實施形態中,上述基材之拉伸彈性模數為1500 MPa以上。
於一實施形態中,上述基材之厚度為30 μm~200 μm。
於一實施形態中,構成上述基材之樹脂係選自由聚對苯二甲酸乙二酯樹脂、聚醯亞胺系樹脂、聚醚醚酮樹脂、聚醯胺醯亞胺樹脂、聚萘二甲酸乙二酯樹脂、聚苯硫醚樹脂、聚醚醯亞胺樹脂所組成之群中之至少一種。
於一實施形態中,上述黏著劑層係由活性能量線硬化型黏著劑組合物形成。
[發明之效果]
根據本發明,提供一種耐熱性優異並且亦可適宜地用於高真空高溫製程之背部研磨帶。本發明之背部研磨帶具備基材、及形成於該基材之一面之黏著劑層。該基材之彎曲剛性為0.2 N·mm2
以上,且波長400 nm下之透光率為10%以上,構成該基材之樹脂之熔點為200℃以上。藉由使用具備此種基材之背部研磨帶,即使於供於高真空高溫之灰化處理之情形時,亦防止產生晶圓與黏著劑層之剝層,即使於形成活性能量線硬化型黏著劑組合物之類之輕剝離性黏著劑層之情形時,亦可良好地維持其特性。又,亦可防止平台吸附不良等不良情況。
以下對本發明之實施形態進行說明,但本發明不限定於該等實施形態。
A.背部研磨帶之整體構成
圖1係本發明之一實施形態中之背部研磨帶之概略剖視圖。圖示例中之背部研磨帶100具備基材20、及形成於該基材20之一面之黏著劑層10。實際使用中,為了在使用之前之期間適當地保護黏著劑層10,而將隔離膜可剝離地暫時黏於黏著劑層10。背部研磨帶100通常於半導體晶圓製作步驟結束後,對黏著劑層10照射活性能量線,而使黏著劑層硬化,藉此降低黏著力,而自被黏著體(半導體晶圓)剝離。
又,根據目的,可對上述基材20之供形成黏著劑層之面實施任意適當之表面處理。作為該表面處理,可列舉:鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、電離放射線處理、消光處理、電暈放電處理、底塗處理、交聯處理等。
基材20之彎曲剛性為0.2 N·mm2
以上,且波長400 nm下之透光率為10%以上,構成該基材之樹脂之熔點為200℃以上。又,基材20之厚度較佳為30 μm~200 μm,更佳為50 μm~175 μm。藉由具備此種基材,背部研磨帶之耐熱性提高,即使於供於高真空高溫之灰化處理之情形時,亦可防止晶圓與黏著劑層之間產生剝層。
背部研磨帶100之厚度可設定為任意適當之厚度。背部研磨帶100之厚度較佳為40 μm~500 μm,更佳為150 μm~400 μm。藉由使背部研磨帶100之厚度為上述範圍,可適宜地用於半導體晶圓之背部研磨步驟。
黏著劑層10之厚度較佳為10 μm~300 μm,更佳為15 μm~200 μm。
B.黏著劑層
黏著劑層可使用任意適當之黏著劑組合物來形成。黏著劑組合物較佳為活性能量線硬化型黏著劑組合物。活性能量線硬化型黏著劑組合物可藉由照射活性能量線而降低黏著力。藉由使用活性能量線硬化型黏著劑組合物,可獲得輕剝離性背部研磨帶。作為活性能量線,例如可列舉:γ射線、紫外線、可見光、紅外線(熱線)、射頻波、α射線、β射線、電子束、電漿流、輻射線、粒子射線等。較佳為紫外線。
作為上述黏著劑組合物中所包含之基礎聚合物,例如可列舉:於側鏈、主鏈中、或主鏈末端之至少一處具有硬化性官能基之丙烯酸系樹脂,橡膠系樹脂、矽系樹脂、聚乙烯醚系樹脂等。又,黏著劑組合物可包含硬化性單體成分及/或硬化性低聚物成分。於包含上述具有硬化性官能基之基礎聚合物之黏著劑組合物中,亦可添加硬化性單體成分及/或硬化性低聚物成分。
作為上述丙烯酸系樹脂,可使用任意適當之丙烯酸系樹脂。例如,作為上述丙烯酸系樹脂,可列舉包含(甲基)丙烯酸酯作為主單體成分之樹脂。作為上述(甲基)丙烯酸酯,例如可列舉:甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等包含碳數1~30之直鏈狀或支鏈狀烷基之(甲基)丙烯酸烷基酯;環戊酯、環己酯等(甲基)丙烯酸環烷基酯等。該等單體可僅使用一種或組合兩種以上而使用。
丙烯酸系樹脂亦可視需要包含能夠與上述(甲基)丙烯酸酯共聚之其他共聚性單體作為單體成分。作為其他共聚性單體,例如可列舉:丙烯酸、甲基丙烯酸、伊康酸、富馬酸、馬來酸酐等含羧基或酸酐基之單體;(甲基)丙烯酸2-羥基乙酯等含羥基單體;(甲基)丙烯酸嗎啉酯等含胺基單體;(甲基)丙烯醯胺等含醯胺基之單體等。相對於基礎聚合物100重量份,源自上述共聚性單體之結構單元之含有比率較佳為20重量份以下,更佳為15重量份以下,進而較佳為2.5重量份~10重量份。
上述丙烯酸系樹脂亦可包含能夠與上述丙烯酸酯共聚之含羥基單體作為單體成分。作為含羥基單體,例如可列舉:(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥甲基環己基)甲酯等。上述含羥基單體可僅使用一種或組合兩種以上而使用。
上述丙烯酸系樹脂可藉由利用任意適當之聚合方法使單體成分聚合而獲得。作為該聚合方法,例如可列舉:溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等。
上述黏著劑組合物亦可進而包含於分子內具有硬化性官能基之異氰酸酯系化合物。作為該異氰酸酯系化合物,例如可列舉:甲基丙烯醯異氰酸酯、異氰酸2-甲基丙烯醯氧基乙酯、異氰酸2-丙烯醯氧基乙酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。
作為上述硬化性單體成分及低聚物成分,可使用任意適當之化合物。例如可列舉:上述異氰酸酯系化合物、胺基甲酸酯低聚物、聚胺基甲酸酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。
上述基礎聚合物之重量平均分子量較佳為20萬~300萬,更佳為25萬~150萬。重量平均分子量可藉由GPC(溶劑:THF(tetrahydrofuran,四氫呋喃))進行測定。
上述基礎聚合物之玻璃轉移溫度較佳為-70℃~-20℃,更佳為-60℃~-40℃。
上述黏著劑組合物亦可進而包含任意適當之添加劑。作為上述添加劑,例如可列舉:聚合起始劑、交聯劑、聚合抑制劑、硬化助劑、塑化劑、黏著性賦予劑、抗老化劑、填充劑、著色劑、抗靜電劑、界面活性劑等。上述添加劑可僅使用一種或組合兩種以上而使用。於使用兩種以上添加劑之情形時,添加劑可逐一添加,亦可同時添加兩種以上之添加劑。上述添加劑之調配量可設定為任意適當之量。
作為上述交聯劑,可使用任意適當之交聯劑。例如可列舉:異氰酸酯系交聯劑、環氧系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑、脲系交聯劑、金屬烷氧化物系交聯劑、金屬螯合物系交聯劑、金屬鹽系交聯劑、碳二醯亞胺系交聯劑、㗁唑啉系交聯劑、氮丙啶系交聯劑、胺系交聯劑等。交聯劑可僅使用一種或組合兩種以上而使用。再者,交聯劑之使用量可根據使用用途而設定為任意適當之值。相對於基礎聚合物100重量份,交聯劑之使用量較佳為20重量份以下,更佳為0.1重量份~6重量份。
作為上述塑化劑,可使用任意適當之塑化劑。例如可列舉:鄰苯二甲酸酯系塑化劑、偏苯三甲酸酯系塑化劑、均苯四甲酸酯系塑化劑、己二酸酯系塑化劑等羧酸酯系塑化劑、磷酸系塑化劑,環氧系塑化劑、聚酯系塑化劑(低分子聚酯等)等。相對於基礎聚合物100重量份,塑化劑之使用量較佳為30重量份以下,更佳為0.1重量份~25重量份,進而較佳為0.1重量份~15重量份。
C.基材
上述基材20之彎曲剛性為0.2 N·mm2
以上,且波長400 nm下之透光率為10%以上。構成基材20之樹脂之熔點為200℃以上。藉由具備此種基材,背部研磨帶之耐熱性提高,故亦可適宜地用於高真空高溫處理。
基材之彎曲剛性為0.2 N·mm2
以上,較佳為0.21 N·mm2
以上,更佳為0.23 N·mm2
以上。又,基材之彎曲剛性較佳為75 N·mm2
以下,更佳為45 N·mm2
以下。藉由使彎曲剛性為上述範圍,即使置於高真空高溫之環境下之情形時,亦可抑制被黏著體(半導體晶圓)與黏著劑層之間產生剝層。於本說明書中,彎曲剛性是指根據下式所算出之值。
I=E×w×h3
/12
(式中,I表示彎曲剛性(N·mm2
),E表示拉伸彈性模數(MPa),w表示試片寬度(mm),h表示試片厚度(mm))。
基材於波長400 nm下之透光率為10%以上,較佳為30%以上,更佳為50%以上。若波長400 nm之透光率為上述範圍,則藉由使用活性能量線(較佳為紫外線)硬化性黏著劑作為形成黏著劑層之黏著劑組合物,可更良好地使黏著劑層硬化,可更容易地將背部研磨帶剝離。再者,波長400 nm之透光率為10%以上即可,並無上限。基材於波長400 nm下之透光率可利用紫外可見分光光度計(例如島津製作所製造,商品名:SolidSpec-3700)進行測定。
上述基材之拉伸彈性模數較佳為1500 MPa以上,更佳為1800 MPa以上,進而較佳為2000 MPa以上。又,基材之拉伸彈性模數較佳為50000 MPa以下,更佳為30000 MPa以下。藉由使拉伸彈性模數為上述範圍內,可抑制在高真空高溫環境下被黏著體(半導體晶圓)與黏著劑層之間產生剝層。於本說明書中,拉伸彈性模數是指依照JIS K 7161所測得之值。
上述基材係由熔點為200℃以上之樹脂構成。構成基材之樹脂之熔點較佳為220℃以上,更佳為250℃以上。構成基材之樹脂之熔點並無上限,亦可為不熔融之樹脂。藉由使構成基材之樹脂之熔點為上述範圍,可提高背部研磨帶之耐熱性。基材之熔點可藉由示差掃描熱量測定(DSC)進行測量。
作為形成基材之樹脂,可使用熔點為200℃以上之任意適當之樹脂。例如可列舉:聚對苯二甲酸乙二酯樹脂、聚醯亞胺系樹脂、聚苯并㗁唑樹脂、聚萘二甲酸乙二酯樹脂、聚醚醚酮樹脂、聚苯硫醚樹脂、聚醚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚四氟乙烯氟樹脂、聚偏二氯乙烯樹脂、聚對苯二甲酸丁二酯樹脂、聚氯三氟乙烯樹脂等。較佳為使用聚對苯二甲酸乙二酯樹脂、聚醯亞胺系樹脂、聚萘二甲酸乙二酯樹脂、聚醚醚酮樹脂、聚苯硫醚樹脂、聚醚醯亞胺樹脂、聚醯胺醯亞胺樹脂。藉由使用該等樹脂,即使於供於高溫(例如200℃以上)之耐熱步驟之情形時,亦可抑制基材之變色及/或變形。
上述基材可利用任意適當之方法來製造。例如,可藉由壓延成膜、流延成膜、吹脹擠出、T模擠出等方法來製造。又,亦可視需要進行延伸處理來製造。
作為上述基材,亦可使用市售之樹脂膜。例如可列舉:DuPont Teijin Films公司製造之商品名:TEONEX(註冊商標)Q51、及商品名:TEONEX(註冊商標)Q83、Kurabo公司製造之商品名:TORCENA、及商品名:EXPEEK、I.S.T公司製造之商品名:TORMED Type X、及商品名:TORMED Type S等。
D.背部研磨帶之製造方法
本發明之背部研磨帶可藉由將上述黏著劑組合物塗佈於上述基材上而製造。作為黏著劑之塗佈方法,可採用:棒塗機塗佈、氣刀塗佈、凹版塗佈、凹版反向塗佈、逆輥塗佈、模唇塗佈、模塗、浸漬塗佈、膠版印刷、軟版印刷、網版印刷等各種方法。又,另外亦可採用於隔離膜形成黏著劑層後,將其貼合至基材之方法等。
[實施例]
以下,藉由實施例對本發明具體地進行說明,但本發明並不限於該等實施例。又,實施例中,只要無特別說明,則「份」及「%」為重量基準。
<製造例1>黏著劑組合物之製備
將100重量份丙烯酸丁酯、8重量份丙烯酸2-羥基乙酯、0.3重量份聚合起始劑(2,2'-偶氮二異丁腈(AIBN))、及溶劑(甲基乙基酮(MEK))進行混合,而製備單體組合物。
將該單體組合物投入至下述聚合用實驗裝置中,一面攪拌一面於常溫下進行6小時氮氣置換。其後,於氮氣流中一面攪拌一面於65℃下保持6小時,進行聚合,從而獲得樹脂溶液;上述聚合用實驗裝置係於1升圓底可分離式燒瓶中配備有可分離式蓋、分液漏斗、溫度計、氮氣導入管、李比氏冷凝器、真空密封器、攪拌棒、及攪拌翼。
將所得之樹脂溶液冷卻至室溫。之後,向該樹脂溶液中添加4重量份之作為具有聚合性碳-碳雙鍵之化合物的甲基丙烯酸2-異氰酸基乙酯(昭和電工公司製造,商品名:KARENZ MOI)。進而,添加0.11重量份二月桂酸二丁基錫(IV)(和光純藥工業公司製造),並於空氣氛圍下、50℃下攪拌24小時,從而獲得聚合物溶液。
向100重量份所得之聚合物溶液中混合1重量份交聯劑(Tosoh公司製造,商品名:CORONATE L)、1重量份起始劑(BASF公司製造,商品名:IRGACURE 369)、0.1重量份聚合抑制劑(BASF公司製造,商品名:IRGANOX 1010)、0.5重量份硬化助劑1(ADEKA公司製造,商品名:EDP300)、及2.5重量份硬化助劑2(ADEKA公司製造,商品名:EDP1100),獲得黏著劑組合物。
[實施例1]
作為基材,使用對聚萘二甲酸乙二酯膜1(DuPont Teijin Films公司製造,商品名:TEONEX(註冊商標)Q51,厚度50 μm)之一面施以電暈處理而獲得者。
將製造例1中製備之黏著劑組合物塗佈於隔離膜(於聚酯系膜(三菱化學公司製造,商品名:MRF38,厚度:38 μm)之單面塗佈矽酮系剝離劑而得者)之剝離處理面,於120℃下加熱2分鐘,而形成黏著劑層(厚度:50 μm)。
將上述基材之電暈處理面與形成於隔離膜上之黏著劑層貼合,並於50℃下熟化2天,而獲得背部研磨帶。
[實施例2]
除了使用聚酯系膜(Kurabo公司製造,商品名:TORCENA,厚度50 μm)代替聚萘二甲酸乙二酯膜1以外,以與實施例1相同之方式獲得背部研磨帶。
[實施例3]
除了使用聚異氰酸酯系膜1(I.S.T公司製造,商品名:TORMED Type X,厚度50 μm)代替聚萘二甲酸乙二酯膜1以外,以與實施例1相同之方式獲得背部研磨帶。
(比較例1)
除了使用聚萘二甲酸乙二酯膜2(DuPont Teijin Films公司製造,商品名:TEONEX (註冊商標) Q83,厚度25 μm)代替聚萘二甲酸乙二酯膜1以外,以與實施例1相同之方式獲得背部研磨帶。
(比較例2)
除了使用聚醚醚酮膜(Kurabo公司製造,商品名:EXPEEK,厚度25 μm)代替聚萘二甲酸乙二酯膜1以外,以與實施例1相同之方式獲得背部研磨帶。
(比較例3)
除了使用聚異氰酸酯系膜2(I.S.T公司製造,商品名:TORMED Type S,厚度25 μm)代替聚萘二甲酸乙二酯膜1以外,以與實施例1相同之方式獲得背部研磨帶。
(比較例4)
除了使用聚異氰酸酯系膜3(DuPont-Toray公司製造,商品名:KAPTON 200V,厚度50 μm)代替聚萘二甲酸乙二酯膜1以外,以與實施例1相同之方式獲得背部研磨帶。
[評價]
對實施例及比較例中使用之基材、或所獲得之背部研磨帶進行以下評價(1)~(5)。將結果示於表1。
(1)波長400 nm之透光率
使用紫外可見分光光度計(島津製作所製造,商品名:SolidSpec-3700),對用作基材之各膜於波長400 nm下之透光率進行測定。
(2)熔點
使用示差掃描量熱計(TA Instrument公司製造,製品名:Q2000),對用作基材之膜之熔點進行測定。再者,即使加熱至400℃亦未檢測到熔解峰之膜被認為不可熔解。
(3)彎曲剛性
將用作基材之膜切割成寬10 mm×長100 mm之尺寸,將其用作試片。依照JIS K 7161,測定各試片之拉伸彈性模數。根據試片之尺寸及拉伸彈性模數之結果,藉由下式算出彎曲剛性。
I=E×w×h3
/12
(式中,I表示彎曲剛性(N·mm2
),E表示拉伸彈性模數(MPa),w表示試片寬度(mm),h表示試片厚度(mm))。
(4)紫外線硬化性
將所得之背部研磨帶切割成20 mm寬,並貼附於矽鏡面晶圓,利用高壓水銀燈(70 mW/cm2
)照射10秒。繼而,利用依照JIS Z 0237(2000)之方法(貼合條件:2 kg輥往復1次,剝離速度:300 mm/分鐘,剝離角度:180°),測定黏著力。若黏著力未達1 N/20 mm,則設為○,若黏著力為1 N/20 mm以上,則設為×。
(5)耐熱性
將所得之背部研磨帶貼合於矽鏡面晶圓,並投入至真空烘箱(Yamato Scientific公司製造,製品名:DP-31)中,於加熱250℃、真空度0.1 torr之狀態下放置10分鐘。其後,將產物從真空烘箱中取出,利用目視確認黏著劑層與矽鏡面晶圓之間是否有剝層。將未產生剝層者設為○,將產生剝層者設為×。
[表1]
基材 | UV硬化性 | 耐熱性 | |||||
厚度 (μm) | 熔點溫度 (℃) | 拉伸彈性模數 (MPa) | 彎曲剛性(N·mm2 ) | 波長400 nm之透光率 (%) | |||
實施例1 | 50 | 269 | 2200 | 0.23 | 74 | ○ | ○ |
實施例2 | 50 | 277 | 2300 | 0.24 | 88 | ○ | ○ |
實施例3 | 50 | 不可熔解 | 3300 | 0.34 | 77 | ○ | ○ |
比較例1 | 25 | 269 | 2200 | 0.03 | 84 | ○ | × |
比較例2 | 25 | 327 | 3400 | 0.04 | 60 | ○ | × |
比較例3 | 25 | 不可熔解 | 3800 | 0.05 | 40 | ○ | × |
比較例4 | 50 | 不可熔解 | 3300 | 0.34 | 0 | × | ○ |
實施例1~3之背部研磨帶同時實現耐熱性及優異之UV硬化性。因此,亦可適宜地用於高真空高溫製程。
[產業上之可利用性]
本發明之背部研磨帶可適宜地用於半導體晶圓之加工。
10:黏著劑層
20:基材
100:背部研磨帶
圖1係本發明之一實施形態中之背部研磨帶之概略剖視圖。
10:黏著劑層
20:基材
100:背部研磨帶
Claims (5)
- 一種背部研磨帶,其具備基材、及形成於該基材之一面之黏著劑層, 該基材之彎曲剛性為0.2 N·mm2 以上,且波長400 nm下之透光率為10%以上, 構成該基材之樹脂之熔點為200℃以上。
- 如請求項1之背部研磨帶,其中上述基材之拉伸彈性模數為1500 MPa以上。
- 如請求項1之背部研磨帶,其中上述基材之厚度為30 μm~200 μm。
- 如請求項1之背部研磨帶,其中構成上述基材之樹脂係選自由聚對苯二甲酸乙二酯樹脂、聚醯亞胺系樹脂、聚醚醚酮樹脂、聚醯胺醯亞胺樹脂、聚萘二甲酸乙二酯樹脂、聚苯硫醚樹脂、聚醚醯亞胺樹脂所組成之群中之至少一種。
- 如請求項1至4中任一項之背部研磨帶,其中上述黏著劑層係由活性能量線硬化型黏著劑組合物形成。
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