TW202038423A - 扇出型天線封裝結構及其封裝方法 - Google Patents

扇出型天線封裝結構及其封裝方法 Download PDF

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TW202038423A
TW202038423A TW109100790A TW109100790A TW202038423A TW 202038423 A TW202038423 A TW 202038423A TW 109100790 A TW109100790 A TW 109100790A TW 109100790 A TW109100790 A TW 109100790A TW 202038423 A TW202038423 A TW 202038423A
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antenna
layer
fan
chip
dielectric layer
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TW109100790A
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TWI772736B (zh
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張簡上煜
徐宏欣
林南君
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力成科技股份有限公司
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Abstract

本發明係一種扇出型天線封裝結構其封裝方法，其中主要係將天線層設置於封膠體上，封膠體中包覆晶片，晶片之金屬接墊直接與重佈線層電性連接，則由於其中的晶片不須經過晶圓凸塊製程，而能相對減少製程成本。

Description

扇出型天線封裝結構及其封裝方法
本發明係關於一種扇出型天線封裝結構及其封裝方法，係指一種整合晶片及天線的扇出型天線封裝結構及其封裝方法。
隨著通訊技術的發展，面對即將到來的第五代行動通訊世代（5th generation mobile networks，簡稱5G），將天線結構整合於半導體封裝結構中，係為天線製程中重要的研發方向。然後，現有技術的天線封裝結構，具有製程繁瑣及製造成本較高等缺點，而不利於廣泛應用。
有鑑於此，本發明係改良現有技術的天線封裝結構及其封裝方法，以期達到簡化製程及降低成本等優點。
為達到上述之發明目的，本發明係提供一種扇出型天線封裝結構，包括： 一重佈線層，係包含有二相對的一第一表面及一第二表面，該第一表面上包含有多個內接墊，該第二表面上則包含有多個外連接件； 一晶片，係包含有二相對的一主動面及一背面，該主動面上包含有多個金屬接墊，該些金屬接墊係直接與該重佈線層的對應內接墊電性連接； 一封膠體，係形成於該重佈線層之第一表面上，並包覆該晶片及該被動元件於其中，其具有一第一側及一第二側，該封膠體之第一側朝向該重佈線層之第一表面； 一天線層，係設於該封膠體之第二側，該天線層包含有一介電層及多個天線導體，該介電層具有一第一側，該介電層之第一側朝向該封膠體之第二側，該天線導體設於該介電層之第一側。
由上述說明可知，本發明扇出型天線封裝結構係將天線層整合於扇出型封裝結構中，以簡化製程，且本發明的晶片不必經過晶圓凸塊製程，可相對減少製程成本。
欲達成上述目的所使用的主要技術手段係令該扇出型天線封裝方法包含以下步驟： （a）提供一晶片載板； （b）將多個晶片黏著於該晶片載板上；其中各該晶片的一主動面係黏著於該晶片載板上，其一背面係遠離該晶片載板； （c）將一封膠體覆蓋於該晶片載板上的該些晶片，其中該封膠體之第一側朝向該晶片載板，該封膠體之第二側遠離該晶片載板； （d）設置一天線層於該封膠體之第二側並移除該晶片載板，其中該天線層包含有一介電層及多個天線導體，該介電層具有一第一側，該介電層之第一側朝向該封膠體之第二側，該天線導體設於該介電層之第一側； （e）以重佈線層製程於該封膠體上形成一重佈線層，以該些晶片的金屬接墊直接與該重佈線層電性連接； （f）於該重佈線層上形成多個外連接件；以及 （g）進行切割步驟，以形成多個獨立的扇出型天線封裝結構，且各該扇出型天線封裝結構包含有至少一晶片及一天線層。
由上述說明可知，本發明係扇出型天線封裝結構係將天線層整合於扇出型封裝結構中，以簡化製程，且本發明的晶片不必經過晶圓凸塊製程，則重佈線層可與晶片之金屬接墊直接電性連接，可相對減少製程成本。
以下配合圖式及本發明之實施例，進一步闡述本發明為達成預定發明目的所採取的技術手段，其中圖式僅為了說明目的而已被簡化，並通過描述本發明的元件和組件之間的關係來說明本發明的結構或方法發明，因此，圖中所示的元件不以實際數量、實際形狀、實際尺寸以及實際比例呈現，尺寸或尺寸比例已被放大或簡化，藉此提供更好的說明，已選擇性地設計和配置實際數量、實際形狀或實際尺寸比例，而詳細的元件佈局可能更複雜。
請參閱圖1所示，係為本發明扇出型天線封裝結構的剖面圖，其包含有一重佈線層10、至少一晶片20、一封膠體30及一天線層40。於本實施例為包含一晶片20，此僅為例示而非以此為限。
上述重佈線層10係包含有一介電絕緣本體11、多條內連接線12 、多個內接墊13及多個外連接件14；其中該介電絕緣本體11係包含有二相對的一第一表面111及一第二表面112，該些內接墊13分別成形於該第一表面111，而該第二表面112則形成有該些外連接件14；又該些內接墊13及該些外連接件14均與位在該介電絕緣本體11內之該些內連接線12對應電性連接。於本實施例，該介電絕緣本體11可為PI、PBO、BCB等介電絕緣材。於本實施例，該外連接件14為錫球。
上述晶片20係包含有二相對的一主動面21及一背面23，該主動面21上包含有多個金屬接墊22；其中該主動面21係朝向該重佈線層10之第一表面111，且該些金屬接墊22係與該重佈線層10的對應內接墊13電性連接，而該背面23則遠離該重佈線層10。於本實施例，該晶片20為一射頻晶片（RF IC）。
上述封膠體30係形成於該重佈線層10之第一表面111上，並包覆該晶片20於其中。該封膠體30具有一第一側31及一第二側32，該封膠體30之第一側31朝向該重佈線層10之第一表面111。於本實施例，該封膠體30可為環氧樹脂（epoxy）、ABF（Ajinomoto Build-up Film）絕緣材料、矽基材料或其他適合的絕緣材料所製，但也可採與該介電絕緣本體11相同的材料，如此提高該封膠體30與該重佈線層10的材料相容性，即其間存在最小的材料本質差異，也不因熱膨脹係數不匹配而產生翹曲問題。於本實施例，該封膠體30之厚度可依據所需的天線操作頻率而定。
上述天線層40係設置於該封膠體30的第二側32，該天線層40包含有一介電層41及多個天線導體42，該介電層41之第一側411朝向該封膠體30之第二側32，該些天線導體42用於微波或無線電波輻射而提供天線功能，該些天線導體42係設於該介電層41之第一側411與該封膠體30之第二側32。於本實施例，該些天線導體42之位置與該晶片20之金屬接墊22的位置彼此不對齊，藉此避免訊號干擾。在一實施例中，該介電層41可為ABF絕緣材料、防焊漆（solder mask）、薄片封膠（sheet mold）等，但也可採與該封膠體30相同的材料，如此提高該天線層40與該封膠體30的材料相容性，即其間存在最小的材料本質差異，也不因熱膨脹係數不匹配而產生翹曲問題。再者，在扇出型封裝結構的材質應用中，一般而言該介電絕緣本體11之材質的熱膨脹係數（Coefficient of Thermal Expansion，CTE）會大於封膠體30之材質的熱膨脹係數，故在介電層41的材質選擇上也使用熱膨脹係數大於封膠體30之材質，由於當相異材質接合後受熱時，整體將朝熱膨脹係數較小者翹曲，則封膠體30在兩側均為熱膨脹係數較大之介電絕緣本體11、及介電層41的施力下，將達到受力平衡而不朝任一側翹曲。
以下進一步說明本發明扇出型天線封裝方法，如圖2A至圖4F所示，係包含有以下數道步驟。在本實施例中，製程係分為圖2A至2B所示的天線製程、圖3A至3C所示的晶片封裝製程、以及圖4A至4F所示的結合製程，但本發明不限於此，亦可不獨立執行天線製程和晶片封裝製程，而合併執行為天線封裝製程。又，天線製程和晶片封裝製程的順序並無先後限制，可同時進行、亦可先後進行。
天線製程：
請參閱圖2A所示，先準備一天線載板50，該天線載板50上形成有一接合層51。於本實施例，該天線載板50可為玻璃陶瓷金屬或玻璃纖維板，但不以此為限。於本實施例，由於天線製程係獨立於晶片封裝製程，天線載板50無須歷經黏晶製程（die bond），故接合層51可無須為黏膠層而可為離型層。
請參閱圖2B所示，於該天線載板50上成形該天線層40，係先成形一介電層41於該接合層51上，再於該介電層41之第一側411上成形多個天線導體42以構成一天線半成品500。在一實施例中，由於該些天線導體42之間的間隙（pitch）並非細微，故該天線導體42可透過非黃光微影製程加以成形，例如金屬膠材印刷（metal paste printing）、噴塗、化鍍（Chemical / Electro-less Plating）等製程。在一實施例中，該介電層41為為黑色，作為成品的打印用。
晶片封裝製程：
請參閱圖3A所示，先準備一晶片載板60，該晶片載板60上形成有一黏膠層61，也可進一步形成有一樹脂層；於本實施例，該晶片載板60可為玻璃陶瓷金屬或玻璃纖維板，但不以此為限。
請參閱圖3B所示，將多個晶片20透過黏膠層61黏著在該晶片載板60上，其中各該晶片20的主動面21係朝向並黏著在該晶片載板60上，各該晶片20的背面23係遠離該晶片載板60，各該晶片20未經晶圓凸塊製程，故其各該金屬接墊22上未形成有凸塊。於本實施例，該些金屬接墊22陷入該黏膠層61中。
請參閱圖3C所示，將一封膠體30覆蓋於該晶片載板60上，以包覆該些晶片20於其中以構成一晶片半成品600，此時該封膠體30的第一側31朝向該黏膠層61並對應該些晶片20之主動面21。於本實施例，該封膠體30之厚度可依據所需的天線操作頻率而定，而該封膠體30可在施作時即製成預定厚度、或於施作後再以一般機械研磨或化學機械研磨（Chemical-Mechanical Polishing，CMP）將該封膠體30研磨至所需厚度。在一實施例中，於成形封膠體30後在封膠體30尚未完全固化（cure）之前，即開始進行後續的結合製程，以利在高溫下與其他結構結合或設置其他結構。
結合製程：
請參閱圖4A及4B所示，將該天線半成品500覆蓋於該晶片半成品600上，以該天線層41之第一側411朝向該封膠體30之第二側32設置，並移除該晶片載板60，使該些晶片20之主動面21及金屬接墊22外露。覆蓋該天線半成品500於該晶片半成品600之步驟、與移除該晶片載板60之步驟的順序可互為先後，於本實施例係先覆蓋該天線半成品500於該晶片半成品600，再移除該晶片載板60。
請參閱圖4C所示，以重佈線層製程於該封膠體30的第一側31上設置一重佈線層10，由於該些晶片20的金屬接墊22已外露，可與該重佈線層10直接電性連接；依據封裝結構的需求決定重佈線層10的介電絕緣層11層數及內連接線12的層數，本發明不予限制。
請參閱圖4D所示，移除該天線載板50，使該天線層40之介電層41外露。
請參閱圖4E所示，於該重佈線層10之外表面上形成有外連接件14；於本實施例，該外連接件14為錫球。
請參閱圖4F所示，進行切割步驟，以形成多個獨立的扇出型天線封裝結構，且各該扇出型天線封裝結構包含有一晶片20及多個天線導體42。
在另一實施例中，亦可無須另外進行天線製程，並在晶片封裝製程後設置天線層及重佈線層。
綜上所述，由於本發明之晶片20並未經過晶圓凸塊製程，故簡化製程並減少製程成本。封膠體30的厚度可透過研磨來精確的達到所欲厚度，以配合所需的天線操作頻率。將天線層40獨立製作，亦可減少使用黏著材料、並避免減少清除黏著材料的化學清理程序，進而簡化製程。而在介電層41的材質選擇上使用熱膨脹係數大於該封膠體30之材質，以使封膠體30在兩側均為熱膨脹係數較大之介電絕緣本體11、及介電層41的施力下，將達到受力平衡而不朝任一側翹曲。
以上所述僅是本發明的實施例而已，並非對本發明做任何形式上的限制，雖然本發明已以實施例揭露如上，然而並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明技術方案的範圍內，當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例，但凡是未脫離本發明技術方案的內容，依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾，均仍屬於本發明技術方案的範圍內。
10:重佈線層11:介電絕緣本體 111:第一表面112:第二表面 12:內連接線13:內接墊 14:外連接件20:晶片 21:主動面22:金屬接墊 23:背面30:封膠體 31:第一側32:第二側 40:天線層41:介電層 411:第一側42:天線導體 500:天線半成品50:天線載板 51:接合層600:晶片半成品 60:晶片載板61:黏膠層
圖1：本發明扇出型天線封裝結構的剖面圖。 圖2A至圖2B：本發明扇出型天線封裝方法之天線製程的不同步驟剖面圖。 圖3A至圖3C：本發明扇出型天線封裝方法之晶片封裝製程的不同步驟剖面圖。 圖4A至圖4F：本發明扇出型天線封裝方法之結合製程的不同步驟剖面圖。
10:重佈線層
11:介電絕緣本體
111:第一表面
112:第二表面
12:內連接線
13:內接墊
14:外連接件
20:晶片
21:主動面
22:金屬接墊
23:背面
30:封膠體
31:第一側
32:第二側
40:天線層
41:介電層
411:第一側
42:天線導體

Claims (10)

  1. 一種扇出型天線封裝結構，包括： 一重佈線層，係包含有二相對的一第一表面及一第二表面，該第一表面上包含有多個內接墊，該第二表面上則包含有多個外連接件； 一晶片，係包含有二相對的一主動面及一背面，該主動面上包含有多個金屬接墊，該些金屬接墊係直接與該重佈線層的對應內接墊電性連接； 一封膠體，係形成於該重佈線層之第一表面上，並包覆該晶片及該被動元件於其中，其具有一第一側及一第二側，該封膠體之第一側朝向該重佈線層之第一表面； 一天線層，係設於該封膠體之第二側，該天線層包含有一介電層及多個天線導體，該介電層具有一第一側，該介電層之第一側朝向該封膠體之第二側，該天線導體設於該介電層之第一側。
  2. 如請求項1所述之扇出型天線封裝結構，其中： 該些天線導體之位置與該晶片之金屬接墊的位置彼此不對齊。
  3. 如請求項1或2所述之扇出型天線封裝結構，其中： 該天線層之介電層之材質的熱膨脹係數大於該封膠體之材質的熱膨脹係數，該重佈線層中的介電絕緣本體之材質的熱膨脹係數大於該封膠體之材質的熱膨脹係數。
  4. 如請求項1或2所述之扇出型天線封裝結構，其中： 該天線層之介電層、該重佈線層中的介電絕緣本體以及該封膠體為相同材質。
  5. 一種扇出型天線封裝方法，包括： （a）提供一晶片載板； （b）將多個晶片黏著於該晶片載板上；其中各該晶片的一主動面係黏著於該晶片載板上，其一背面係遠離該晶片載板； （c）將一封膠體覆蓋於該晶片載板上的該些晶片，其中該封膠體之第一側朝向該晶片載板，該封膠體之第二側遠離該晶片載板； （d）設置一天線層於該封膠體之第二側並移除該晶片載板，其中該天線層包含有一介電層及多個天線導體，該介電層具有一第一側，該介電層之第一側朝向該封膠體之第二側，該天線導體設於該介電層之第一側； （e）以重佈線層製程於該封膠體上形成一重佈線層，以該些晶片的金屬接墊直接與該重佈線層電性連接； （f）於該重佈線層上形成多個外連接件；以及 （g）進行切割步驟，以形成多個獨立的扇出型天線封裝結構，且各該扇出型天線封裝結構包含有至少一晶片及一天線層。
  6. 如請求項5所述之扇出型天線封裝方法，其中： 於步驟（a）執行前，先進行天線製程，係於一天線載板上成形該天線層，並在步驟（d）中將該天線載板上所設置之天線層貼附於該封膠體之第二側，於步驟（e）完成後移除移除該晶片載板。
  7. 如請求項6所述之扇出型天線封裝方法，其中： 於該天線載板上成形該天線層之步驟中，係先成形該介電層於該天線載板，再成形所述多個天線導體於該介電層上，所述天線導體以非黃光微影製程加以成形。
  8. 如請求項6或7所述之扇出型天線封裝方法，其中： 於步驟（d）中，先將該天線載板上所設置之天線層貼附於該封膠體之第二側，再移除該晶片載板。
  9. 如請求項5所述之扇出型天線封裝方法，其中： 於步驟（c）完成後，研磨該封膠體之第二側。
  10. 如請求項5所述之扇出型天線封裝方法，其中： 該天線層之介電層之材質的熱膨脹係數大於該封膠體之材質的熱膨脹係數，該重佈線層中的介電絕緣本體之材質的熱膨脹係數大於該封膠體之材質的熱膨脹係數。
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