TW202031623A - 具有高q因數的ltcc介電組成物及裝置 - Google Patents
具有高q因數的ltcc介電組成物及裝置 Download PDFInfo
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- TW202031623A TW202031623A TW109106375A TW109106375A TW202031623A TW 202031623 A TW202031623 A TW 202031623A TW 109106375 A TW109106375 A TW 109106375A TW 109106375 A TW109106375 A TW 109106375A TW 202031623 A TW202031623 A TW 202031623A
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- 239000000203 mixture Substances 0.000 title claims abstract description 117
- 239000000463 material Substances 0.000 claims abstract description 56
- 238000010304 firing Methods 0.000 claims abstract description 53
- 239000003989 dielectric material Substances 0.000 claims abstract description 48
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 56
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 35
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 26
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 229910021350 transition metal silicide Inorganic materials 0.000 claims description 3
- 239000002243 precursor Substances 0.000 abstract description 25
- -1 zinc-lithium-titanium oxide Chemical compound 0.000 abstract description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 36
- 230000004907 flux Effects 0.000 description 22
- 239000002019 doping agent Substances 0.000 description 20
- 239000000919 ceramic Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 9
- 238000009472 formulation Methods 0.000 description 8
- 239000008188 pellet Substances 0.000 description 8
- 239000012736 aqueous medium Substances 0.000 description 6
- 229910052793 cadmium Inorganic materials 0.000 description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- NNRLDGQZIVUQTE-UHFFFAOYSA-N gamma-Terpineol Chemical compound CC(C)=C1CCC(C)(O)CC1 NNRLDGQZIVUQTE-UHFFFAOYSA-N 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ISJNRPUVOCDJQF-UHFFFAOYSA-N (1-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)CC(C)(C)C(O)OC(=O)C(C)C ISJNRPUVOCDJQF-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 229940087291 tridecyl alcohol Drugs 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
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- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
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- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
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Abstract
LTCC裝置係自包括前驅物材料混合物的介電組成物所製造,其中該組成物在燒製後形成具有鋅-鋰-鈦氧化物或矽-鍶-銅氧化物主體之介電材料。
Description
本發明係關於一種介電組成物,及更特別關於一種鋅-鋰-鈦氧化物及矽-鍶銅氧化物基底的介電組成物,其具有介電常數K=5-50與在GHz頻率下非常高的Q因數,及其可使用在具有貴金屬金屬噴敷之低溫共燒陶瓷(LTCC)應用中。
在用於無線應用的LTCC系統中,所使用之現有技術材料係使用具有介電常數範圍K=4-50及在1 MHz之測量頻率下具有Q因數約500-1,000的介電質。特別的應用及裝置結構會指定其需要之特定介電常數及Q因數。需要高頻應用者需要高介電常數、高Q因數材料。此通常藉由結合高K的CaTiO3
與低K材料來獲得特定性質而達成。但是,CaTiO3
在GHz頻率下的低Q因數通常具有降低該陶瓷的Q值之不想要的效應。另外,CaTiO3
的高燒製溫度對LTCC技術來說是被禁止的。
本發明係關於介電組成物,及更特別關於鋅-鋰-鈦氧化物及矽-鍶-銅氧化物基底的介電組成物,其具有介電常數K=5-50例如約5至約30與在GHz高頻下非常高的Q因數,及其可使用在具有貴金屬金屬噴敷的低溫共燒陶瓷(LTCC)應用中。Q因數=1/Df,其中Df係介電損耗正切。Qf值係一使用來描述出介電質典型在GHz範圍頻率下的品質之參數。Qf可以Qf=Q*f表示,其中該測量頻率f(在GHz下)係乘以在該頻率下的Q因數。對在>5 GHz下具有大於1000之非常高Q值而用於高頻應用的高介電常數材料有成長性需求。
廣泛來說,本發明之陶瓷材料包括一主體(host),其藉由下列製得:混合適當量的ZnO、Li2
O及TiO2
或SiO2
、SrO及CuO;在水性媒質中將這些材料一起研磨至粒子尺寸D50
約0.2至5.0微米。乾燥此漿體及在約800至1200℃下煅燒約1至5小時以形成該包括ZnO、Li2
O及TiO2
或SiO2
、SrO及CuO的主體材料(host material)。然後,機械式磨碎所產生的主體材料及與助熔劑(fluxing agent)混合,再次在水性媒質中研磨至粒子尺寸D50
約0.2至5.0微米。任擇地,該粒子尺寸D50
範圍係約0.5至1.0微米。乾燥該經研磨的陶瓷粉末及磨碎以產生一細微分開的粉末。可將所產生的粉末加壓成圓柱狀丸粒及在溫度約775至約925℃下燒製。在一個實施例中,該丸粒可在溫度約800至約910℃下燒製。該燒製係進行約1至約200分鐘的時間。
本發明之具體實例係一種包含前驅物材料之混合物的組成物,其在燒製後形成一無鉛且無鎘之鋅-鋰-鈦氧化物主體材料,及其可自身或與其它氧化物組合形成一介電材料。
本發明之具體實例係一種包含前驅物材料之混合物的組成物,其在燒製後形成一無鉛且無鎘的矽-鍶-銅氧化物主體材料,及其可自身或與其它氧化物組合形成一介電材料。
在較佳的具體實例中,該主體材料不包括鉛。在任擇的較佳具體實例中,該主體材料不包括鎘。在更佳的具體實例中,該主體材料不包括鉛及鎘。
在較佳的具體實例中,該主體材料包含:(i) 40-65重量%TiO2
、(ii) 30-60重量%ZnO及(iii) 0.1-15重量%Li2
O。
在另一個具體實例中,該主體材料包含:(i) 40-65重量%TiO2
、(ii) 30-60重量%ZnO、(iii) 0.1-15重量%Li2
O、(iv) 0-5重量%MnO2
及(v) 0-5重量%NiO。
在另一個較佳具體實例中,該主體材料包含:(i) 45-75重量%SiO2
、(ii) 15-35重量%SrO及(iii) 10-30重量%CuO。
本發明的具體實例可包括多於一種主體或一於本文中別處所揭示出的主體之選擇。
本發明的介電材料可一起包括80-99.6重量%之至少一種於本文中揭示出的主體材料之任何與下列助熔劑及摻雜物之任何或全部,其中該試劑及摻雜物的量不超過在圓括號中所指示出的值:SiO2
(4重量%)、CaCO3
(4重量%)、B2
O3
(4重量%)、Li2
CO3
(4重量%)、LiF(4重量%)、BaCO3
(8重量%)、硼酸鋅(8重量%)及CuO(3重量%)。
在另一個具體實例中,該助熔劑及摻雜物可包括:0.3-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0-3重量%CuO或任何前述的氧化物同等物。
在又另一個具體實例中,該助熔劑及摻雜物可包括:0.3-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0.1-4重量%LiF、0.1-3重量%CuO或任何前述的氧化物同等物。
在更另一個具體實例中,該助熔劑及摻雜物可包括:0-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0-3重量%CuO或任何前述的氧化物同等物。
在又更另一個具體實例中,該助熔劑及摻雜物可包括:0.1-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0-3重量%CuO或任何前述的氧化物同等物。
在更另一個具體實例中,該助熔劑及摻雜物可包括:0-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0.1-3重量%CuO或任何前述的氧化物同等物。
本發明的介電材料不包括呈任何形式的鉛及呈任何形式的鎘。
本發明的具體實例係一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 35-65重量%TiO2
、(b) 25-55重量%ZnO、(c) 0.1-15重量%Li2
O、(d) 0.1-5重量%B2
O3
、(e) 0-4重量%SiO2
、(f) 0-6重量%BaO、(g) 0-4重量%CaO、(h) 0-4重量%LiF、(i) 0-3重量%CuO、無鉛且無鎘。
本發明的另一個具體實例係一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 35-65重量%TiO2
、(b) 25-55重量%ZnO、(c) 0.1-15重量%Li2
O、(d) 0.1-5重量%B2
O3
、(e) 0-7重量%SiO2
、(f) 0-6重量%BaO、(g) 0-6重量%CaO、(h) 0-5重量%LiF、(i) 0-5重量%CuO、無鉛且無鎘。
本發明的又另一個具體實例係一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 45-75重量%SiO2
、(b) 15-35重量%SrO、(c) 10-30重量%CuO、(d) 0.1-5重量%B2
O3
、(e) 0-4重量%CaO、(f) 0-4重量%Li2
O、(g) 0-8重量%ZnO、(g) 0-4重量%LiF、無鉛且無鎘。
本發明的又更另一個具體實例係一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 45-75重量%SiO2
、(b) 15-35重量%SrO、(c) 10-30重量%CuO、(d) 0.1-5重量%B2
O3
、(e) 0-6重量%CaO、(f) 0-3重量%Li2
O、(g) 0-8重量%ZnO、(g) 0-5重量%LiF、無鉛且無鎘。
在本發明的其它具體實例中,一無鉛且無鎘組成物包含一前驅物混合物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 47-54重量%TiO2
、(b) 33-51重量%ZnO、(c) 0.5-10重量%Li2
O、(d) 0.91-1.8重量%B2
O3
、(e) 0.04-0.2重量%SiO2
、(f) 0-0.6重量%BaO、(g) 0-0.4重量%CaO、(h) 0.1-4重量%LiF、(i) 0.1-3重量%CuO、無鉛且無鎘。
在本發明的更其它具體實例中,一無鉛且無鎘組成物包含一前驅物混合物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a)50-56重量%SiO2
、(b) 22-24重量%ZnO、(c) 17-19重量%CuO、(d) 0.4-2.2重量%B2
O3
、(e) 0-0.4重量%CaO、(f) 0-6.5重量%ZnO、(g) 0.1-3重量%Li2
O、(h) 0-5重量%LiF、無鉛且無鎘。
在本發明的又更其它具體實例中,一無鉛且無鎘組成物包含一前驅物混合物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 20-31重量%TiO2
、(b) 16-25重量%ZnO、(c) 9-15重量%SrO、(d) 22-34重量%SiO2
、(e)7.6-11.5重量%CuO(f) 2.1-3.2重量%Li2
O、(g) 1-1.1重量%B2
O3
、(h) 0.1-0.3重量%CaO、(i) 0.5-0.9重量%LiF、無鉛且無鎘。
對本發明的任何具體實例來說,考慮一由零所界限的材料範圍以對下限端由0.01%或0.1%所界限的類似範圍提供支撐。
對由零重量百分比所界限的每個組成物範圍來說,該範圍係經考慮亦便教導一具有0.01重量%或0.1重量%的下限範圍。諸如60-90重量%的Ag+Pd+Pt+Au之教導意謂著所列舉的組分之任何或全部可以所描述的範圍存在於該組成物中。
在另一個具體實例中,本發明係關於一種無鉛且無鎘介電組成物,其在燒製前包含於本文別處所揭示的任何主體材料。
在另一個具體實例中,本發明係關於一種電或電子構件,其在燒製前一起包含於本文所揭示的任何介電質糊與包含下列之導電糊:(a) 60-90重量%的Ag+Pd+Pt+Au;(b) 1-10重量%選自於由下列所組成之群的添加劑:過渡金屬之矽化物、碳化物、氮化物及硼化物;(c) 0.5-10重量%的至少一種玻璃料;及(d) 10-40重量%的有機部分。該電或電子構件可係高Q諧振器、帶通濾波器、無線封裝系統及其組合。
在另一個具體實例中,本發明係關於一種形成電子構件的方法,其包含:將本文所揭示的任何介電質糊施加至一基材;及在足以燒製該介電材料之溫度下燒製該基材。
在另一個具體實例中,本發明係關於一種形成電子構件的方法,其包含將本文所揭示的任何介電材料之粒子施加至一基材,及在足以燒製該介電材料之溫度下燒製該基材。
在另一個具體實例中,本發明之方法包括形成一電子構件,其包含:
(a1)將本文所揭示的任何介電組成物施加至一基材;或
(a2)將一包含任何於本文所揭示的介電組成物之帶狀物施加至一基材;或
(a3)壓密複數個於本文中所揭示的任何介電組成物粒子以形成一單片複合基材;及
(b)在足以燒製該介電材料之溫度下燒製該基材。
要瞭解於本文中的每個數字值(百分比、溫度等等)係假定由「約」前置。在本文的任何具體實例中,該介電材料可包含呈任何比率的不同相,例如結晶及非晶相,例如,1:99至99:1(結晶:非晶相),以莫耳%或重量%任一種表示。其它比率包括10:90、20:80、30:70、40:60、50:50、60:40、70:30、80:20及90:10和在其之間的全部值。在一個具體實例中,該介電質糊包括10-30重量%的結晶介電質及70-90重量%的非晶相介電質。
本發明的前述及其它特徵於此之後將在申請專利範圍中更完整地描述及特別指出,但是,下列說明詳細地提出本發明之某些闡明性具體實例,但是,這些係可使用本發明之原理的不同方法的一些陳述。
[用以實施發明的形態]
LTCC(低溫共燒陶瓷)係一種多層的玻璃陶瓷基材技術,其係在相對低的燒製溫度(低於1000℃)下與低電阻金屬導體諸如Ag、Au、Pt或Pd、或其組合共燒製。有時,其指為「玻璃陶瓷」,因為其主要組成物可由玻璃及氧化鋁或其它陶瓷填料所組成。某些LTCC調配物係再結晶玻璃。玻璃於此可以玻璃料形式提供,其可就地形成或加入至組成物。在某些狀況中,可使用卑金屬諸如鎳及其合金,理想上在非氧化型大氣氛中,諸如氧分壓10-12
至10-8
大氣壓。「卑金屬」係除了黃金、銀、鈀及鉑外的任何金屬。合金金屬可包括Mn、Cr、Co及Al。
切割來自介電材料漿體的帶狀鑄材及形成已知為通孔的孔洞,以便能夠在層間形成電連接。以導電糊填充該等通孔。然後,一起印刷電路圖案與如需要之共燒製的電阻器。堆疊多層印刷的基材。對該堆疊施加熱及壓力以將該等層黏合在一起。然後,進行低溫(>1000℃)燒製。將該經燒製的堆疊鋸成最後尺寸及如需要完成後燒製加工。
在汽車應用中有用的多層結構可具有約5層陶瓷層,例如3-7層陶瓷層或4-6層陶瓷層。在RF應用中,該結構可具有10-25層陶瓷層。至於配線基材,可使用5-8層陶瓷層。
介
電原料
本發明的陶瓷材料包括一主體,其係藉由下列製得:混合適當量的ZnO、Li2
O及TiO2
或SiO2
、SrO及CuO;在水性媒質中將這些材料一起研磨至粒子尺寸D50
約0.2至5.0微米。乾燥此漿體及在約800至1200℃下煅燒約1至5小時,以形成該包括ZnO、Li2
O及TiO2
或SiO2
、SrO及CuO的主體材料。然後,機械式磨碎所產生的主體材料及與助熔劑混合,再次在水性媒質中研磨至粒子尺寸D50
約0.2至5.0微米。在另一個具體實例中,該粒子尺寸D50
範圍係約0.5至1.0微米。
在某種程度上,讓所產生的主體材料接受煅燒以移除在該主體材料中之揮發性雜質,以潛在地促進於隨後製程中的固態反應。在高溫(在約800至1200℃)下煅燒可在粒子間造成團聚。乾燥該經研磨的陶瓷粉末及磨碎以製造出細微分開的粉末。
該主體材料在煅燒及磨碎後可與助熔劑混合。可將所產生的粉末壓成圓柱狀丸粒及在溫度約775至約925℃下燒製。在一個實施例中,該等丸粒可在溫度約800至約910℃下燒製。該燒製係進行一段約1至約200分鐘的時間。
本發明的具體實例係一種包含前驅物材料混合物之組成物,其在燒製後形成一無鉛且無鎘的鋅-鋰-鈦氧化物主體材料,及其可自身或與其它氧化物組合形成一介電材料。
本發明的具體實例係一種包含前驅物材料混合物之組成物,其在燒製後形成一無鉛且無鎘的矽-鍶-銅氧化物主體材料,及其可自身或與其它氧化物組合形成一介電材料。
在較佳的具體實例中,該主體材料不包含鉛。在任擇的具體實例中,該主體材料不包含鎘。在更佳的具體實例中,該主體材料不包含鉛及鎘。
在較佳的具體實例中,該主體材料包含:(i) 40-65重量%TiO2
、(ii) 30-60重量%ZnO及(iii) 0.1-15重量%Li2
O。
在另一個具體實例中,該主體材料包含:(i) 40-65重量%TiO2
、(ii) 30-60重量%ZnO、(iii) 0.1-15重量%Li2
O、(iv) 0-5重量%MnO2
及(v) 0-5重量%NiO。
在另一個較佳的具體實例中,該主體材料包含:(i) 45-75重量%SiO2
、(ii) 15-35重量%SrO及(iii) 10-30重量%CuO。
本發明的具體實例可包括多於一種主體或一於本文別處所揭示出的主體之選擇。
本發明的介電材料可一起包括80-99.6重量%於本文中揭示出的至少一種主體材料之任何與下列助熔劑及摻雜物之任何或全部,其中該助熔劑及摻雜物的量不超過在圓括號中指示出之值:SiO2
(4重量%)、CaCO3
(4重量%)、B2
O3
(4重量%)、Li2
CO3
(4重量%)、LiF(4重量%)、BaCO3
(8重量%)、硼酸鋅(8重量%)及CuO(3重量%)。
在另一個具體實例中,該助熔劑及摻雜物可包括:0.3-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0-3重量%CuO或任何前述的氧化物同等物。
在又另一個具體實例中,該助熔劑及摻雜物可包括:0.3-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0.1-4重量%LiF、0.1-3重量%CuO或任何前述的氧化物同等物。
在又另一個具體實例中,該助熔劑及摻雜物可包括:0.3-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0.2-3.5重量%LiF、0.2-2.5重量%CuO或任何前述的氧化物同等物。
在更另一個具體實例中,該助熔劑及摻雜物可包括:0-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0-3重量%CuO或任何前述的氧化物同等物。
在更另一個具體實例中,該助熔劑及摻雜物可包括:0-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0-3重量%CuO或任何前述的氧化物同等物。
在又更另一個具體實例中,該助熔劑及摻雜物可包括:0.1-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0-3重量%CuO或任何前述的氧化物同等物。
在更另一個具體實例中,該助熔劑及摻雜物可包括:0-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0.1-3重量%CuO或任何前述的氧化物同等物。
在更另一個具體實例中,該助熔劑及摻雜物可包括:0-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0.1-3重量%CuO或任何前述的氧化物同等物。
在又另一個具體實例中,該助熔劑及摻雜物可包括:0-8重量%硼酸鋅、0.1-4重量%B2
O3
、0-4重量%SiO2
、0-4重量%BaCO3
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0.1-3重量%CuO或任何前述的氧化物同等物。
在又更另一個具體實例中,該助熔劑及摻雜物可包括:0-8重量%硼酸鋅、0.2-3.5重量%B2
O3
、0-4重量%SiO2
、0-4重量%CaCO3
、0-4重量%Li2
CO3
、0-4重量%LiF、0.2-2.5重量%CuO或任何前述的氧化物同等物。
本發明之介電組成物不包含呈任何形式的鉛及呈任何形式的鎘。
本發明的另一個具體實例係一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 35-65重量%TiO2
、(b) 25-55重量%ZnO、(c) 0.1-15重量%Li2
O、(d) 0.1-5重量%B2
O3
、(e) 0-7重量%SiO2
、(f) 0-6重量%BaO、(g) 0-6重量%CaO、(h) 0-5重量%LiF、(i) 0-5重量%CuO、無鉛且無鎘。
本發明的又另一個具體實例係一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 45-75重量%SiO2
、(b) 15-35重量%SrO、(c) 10-30重量%CuO、(d) 0.1-5重量%B2
O3
、(e) 0-4重量%CaO、(f) 0-4重量%Li2
O、(g) 0-8重量%ZnO、(g) 0-4重量%LiF、無鉛且無鎘。
本發明的又更另一個具體實例係一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 45-75重量%SiO2
、(b) 15-35重量%SrO、(c) 10-30重量%CuO、(d) 0.1-5重量%B2
O3
、(e) 0-6重量%CaO、(f) 0-3重量%Li2
O、(g) 0-8重量%ZnO、(g) 0-5重量%LiF、無鉛且無鎘。
在本發明的另一個具體實例中,一無鉛且無鎘組成物包含一前驅物混合物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 47-54重量%TiO2
、(b) 33-51重量%ZnO、(c) 0.5-10重量%Li2
O、(d) 0.91-1.8重量%B2
O3
、(e) 0.04-0.2重量%SiO2
、(f) 0-0.6重量%BaO、(g) 0-0.4重量%CaO、(h) 0.1-4重量%LiF、(i) 0.1-3重量%CuO、無鉛且無鎘。
在本發明的又更另一個具體實例中,一無鉛且無鎘組成物包含一前驅物混合物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 47-54重量%TiO2
、(b) 33-51重量%ZnO、(c) 0.5-10重量%Li2
O、(d) 0.1-3重量%B2
O3
、(e) 0-0.3重量%SiO2
、(f) 0-0.6重量%BaO、(g) 0-0.4重量%CaO、(h) 0.1-4重量%LiF、(i) 0.1-3重量%CuO、無鉛且無鎘。
在本發明的更另一個具體實例中,一無鉛且無鎘組成物包含一前驅物混合物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a)50-56重量%SiO2
、(b) 22-24重量%ZnO、(c) 17-19重量%CuO、(d) 0.4-2.2重量%B2
O3
、(e) 0-0.4重量%CaO、(f) 0-6.5重量%ZnO、(g) 0.2-3重量%Li2
O、(h) 0-5重量%LiF、無鉛且無鎘。
在本發明的又更其它具體實例中,一無鉛且無鎘組成物包含一前驅物混合物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:(a) 20-31重量%TiO2
、(b) 16-25重量%ZnO、(c) 9-15重量%SrO、(d) 22-34重量%SiO2
、(e) 6-12重量%CuO(f) 2-4重量%Li2
O、(g) 0.7-2重量%B2
O3
、(h) 0.1-0.5重量%CaO、(i) 0.2-1重量%LiF、無鉛且無鎘。
介電質糊
。該用以形成介電層的糊可藉由混合一有機媒劑與一如於本文中所揭示的介電原料獲得。會在如於此上述所描述般燒製後轉換成此氧化物及複合氧化物者亦係有用的前驅物化合物(碳酸鹽、硝酸鹽、硫酸鹽、磷酸鹽)。一介電材料係藉由選擇包括這些氧化物的化合物或這些氧化物之前驅物,並以適當比例混合其而獲得。對在該介電原料中的此等化合物之比例進行決定,使得可在燒製後獲得想要的介電層組成物。該介電原料(如於本文別處揭示出)通常以具有平均顆粒尺寸約0.1至約3微米,及更佳為約1微米或較小的粉末形式使用。
有機媒劑
。於本文中的糊包括一有機物部分。該有機物部分係或包括一有機媒劑,其係一在有機溶劑中的結合劑或在水中的結合劑。於本文中所使用的結合劑之選擇非為關鍵,諸如乙基纖維素、聚乙烯基丁醇、乙基纖維素及羥丙基纖維素及其組合的習知結合劑與溶劑一起係適當。該有機溶劑亦非關鍵及可根據特別的施加方法(即,印刷或製膜)從習知的有機溶劑進行選擇,諸如丁基卡必醇、丙酮、甲苯、乙醇、二甘醇丁基醚、2,2,4-三甲基戊二醇單異丁酸酯(Texanol®
)、α-萜品醇、β-萜品醇、γ-萜品醇、十三烷基醇、二甘醇乙基醚(Carbitol®
)、二甘醇丁基醚(Butyl Carbitol®
)及丙二醇及其摻合物;以Texanol®
商標出售可自Eastman Chemical Company,Kingsport,TN獲得的產物;以Dowanol®
及Carbitol®
商標出售可自Dow Chemical Co.,Midland,MI獲得的那些。
在本發明的介電質糊之有機物部分上並無強加特別限制。在一個具體實例中,本發明的介電質糊包括約10重量%至約40重量%之有機媒劑;在另一個中,約10重量%至約30重量%。該糊經常包括約1至5重量%的結合劑及約10至50重量%的有機溶劑,而剩餘部分係該介電質組分(固體部分)。在一個具體實例中,本發明的介電質糊包括約60至約90重量%於別處揭示出的固體部分,及約10重量%至約40重量%在此及前述段中描述出的有機物部分。若須要時,本發明的糊可包括最高約10重量%的其它添加劑,諸如分散劑、塑化劑、介電化合物及絕緣化合物。
填料
。為了最小化在不同介電組成物之帶狀層間的膨脹失配,可將諸如堇青石、氧化鋁、鋯土、熔融二氧化矽、鋁矽酸鹽及其組合之填料加入至於本文中的一或多種介電質糊,其量係1-30重量%,較佳為2-20重量%及更佳為2-15重量%。
燒製
。然後,在大氣氛下燒製該介電質堆疊(二或更多層),此係根據在內部電極層形成糊中的導體型式決定。若該內部電極層係由卑金屬導體諸如鎳及鎳合金形成時,該燒製大氣氛可具有氧分壓約10-12
至約10-8
大氣壓。應該避免在分壓低於約10-12
大氣壓下燒製,因為在此低壓下,該導體可被異常地燒製及可變成與該介電層分離。在大於約10-8
大氣壓的氧分壓下,該內部電極層可被氧化。該氧分壓約10-11
至約10-9
大氣壓最好。亦可在週圍空氣中燒製於本文中所揭示的介電組成物。但是,還原性大氣氛(H2
、N2
或H2
/N2
)可不合意地將介電質糊的Bi2
O3
還原成金屬鉍。
本文所揭示的LTCC組成物及裝置之應用包括帶通濾波器(高通或低通)、用於電信包括蜂窩式應用之無線電發射器及接收器、功率放大器模組(PAM)、RF前端模組(FEM)、WiMAX2模組、LTE升級版模組、傳輸控制單元(TCU)、電子式動力轉向(EPS)、引擎管理系統(EMS)、多種感應器模組、雷達模組、壓力感測器、照相機模組、小外形調諧器模組、用於裝置及構件的薄型(thin profile)模組及IC測試機板。帶通濾波器包括二種主要組件,一種係電容器及其它係電感。低K材料對設計電感係好的,但不合適於設計電容器,此係由於需要更大有效面積以便產生足夠電容。高K材料將導致相反結果。本發明家已發現可共燒製低K(4-8)/中K(10-100) LTCC材料及放進單一構件中,可使用低K材料來設計電感區域及可使用高K材料來設計電容器區域以便具有最佳化性能。
[實施例]
提供下列實施例來闡明本發明的較佳態樣及不意欲限制本發明之範圍。
混合適當量的ZnO、Li2
CO3
及TiO2
或SiO2
、SrCO3
及CuO,然後一起在水性媒質中研磨至粒子尺寸D50
約0.2至5.0微米。乾燥此漿體及在約800至1250℃下煅燒約1至10小時以形成該主體材料。在煅燒後,然後機械式磨碎所產生的主體材料及根據於本文中所描述的調配物與助熔劑及摻雜物混合,及再次在水性媒質中研磨至粒子尺寸D50
約0.2至5.0微米。任擇地,該粒子尺寸D50
範圍係約0.5至1.0微米。乾燥該經研磨的粒子及磨碎以製造出細微分開的粉末。然後,將此所產生的粉末加壓成圓柱狀丸粒及在溫度約800-910℃下燒製。例如,該等丸粒可在溫度約850-900℃下燒製約15-60分鐘。該如所燒製(燒結)的丸粒具有列在表1中之組成物。
表1.組成物,以所燒製之丸粒的重量%計。
調配物 | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
TiO2 | 47.266 | 50.895 | 53.437 | 48.475 | 0.000 | 0.000 | 0.000 | 20.358 | 25.447 | 30.537 |
ZnO | 50.351 | 41.109 | 40.840 | 43.490 | 0.000 | 6.051 | 3.229 | 16.444 | 20.555 | 24.665 |
SrO | 0.000 | 0.000 | 0.000 | 0.000 | 23.910 | 22.029 | 23.077 | 14.346 | 11.955 | 9.564 |
SiO2 | 0.000 | 0.000 | 0.123 | 0.052 | 55.584 | 51.098 | 53.529 | 33.351 | 27.792 | 22.234 |
CuO | 0.654 | 0.652 | 0.246 | 0.509 | 18.576 | 17.476 | 18.362 | 11.407 | 9.614 | 7.822 |
Li2 O | 0.567 | 4.760 | 4.024 | 5.146 | 0.621 | 0.000 | 0.000 | 2.276 | 2.690 | 3.104 |
B2 O3 | 1.203 | 1.190 | 0.943 | 1.779 | 0.929 | 2.113 | 0.417 | 1.033 | 1.060 | 1.086 |
BaO | 0.000 | 0.000 | 0.000 | 0.549 | 0.000 | 0.000 | 0.000 | 0.000 | 0.000 | 0.000 |
CaO | 0.000 | 0.000 | 0.386 | 0.000 | 0.380 | 0.000 | 0.000 | 0.228 | 0.190 | 0.152 |
LiF | 0.000 | 1.394 | 0.000 | 0.000 | 0.000 | 1.233 | 1.386 | 0.557 | 0.697 | 0.836 |
下表顯示出在表1中提出的調配物之性質及性能資料。
表2.調配物1-10在燒製後的K、Q及Qf資料。
調配物 | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
頻率(GHz) | 10.19 | 9.07 | 10.48 | 10.23 | 15.52 | 15.62 | 15.41 | 13.13 | 12.63 | 12.22 |
K | 23.28 | 18.04 | 18.80 | 18.54 | 5.29 | 5.15 | 5.44 | 9.09 | 10.31 | 12.13 |
Q因數 | 2,035 | 2,706 | 2,146 | 1,983 | 1,078 | 940 | 1,169 | 897 | 952 | 873 |
Qf | 20,730 | 24,541 | 22,483 | 20,286 | 16,724 | 14,686 | 18,012 | 11,778 | 12,026 | 10,067 |
已發現該調配物1-10在燒製後之介電常數(K)範圍係約5.15至約23.28。使用共振腔技術來測量介電常數(K)及Q因數。當在約9 GHz或較大下測量時,對該調配物1-10在燒製後所測量的Q因數範圍係約873至約2706。
將由熟習該項技術者容易地找到額外的優點及改質。因此,本發明在其較寬廣的態樣下不限於於本文中所顯示出及描述的具體細節及闡明性實施例。因此,可製得多種改質而沒有離開如由所附加的申請專利範圍及其同等物所定義之一般發明概念的精神或範圍。
本發明進一步藉由下列項目進行界定。
項目1.一種無鉛且無鎘組成物,其包含:
(a) 80-99.6重量%之經煅燒的主體材料,其包含:
i) 40-65重量%TiO2
;
ii) 30-60重量%ZnO;
iii) 0.1-15重量%Li2
O;
iv) 0-5重量%MnO2
;
v) 0-5重量%NiO;
vi)無鉛;及
vii)無鎘;
一起與
(b) 0.3-8重量%硼酸鋅;
(c) 0.1-4重量%B2
O3
;
(d) 0-4重量%SiO2
;
(e) 0-4重量%BaCO3
;
(f) 0-4重量%CaCO3
;
(g) 0-4重量%Li2
CO3
;
(h) 0-4重量%LiF;及
(i) 0-3重量%CuO;
或任何前述的氧化物同等物;無鉛且無鎘。
項目2.如項目1之無鉛且無鎘組成物,其中所包括的LiF係0.1-4重量%,及所包括的CuO係0.1-3重量%。
項目3.如項目1之無鉛且無鎘組成物,其中所包括的LiF係0.2-3.5重量%,及所包括的CuO係0.2-2.5重量%。
項目4.一種無鉛且無鎘組成物,其包含:
(a) 80-99.9重量%之經煅燒的主體材料,其包含:
i) 45-75重量%SiO2
;
ii) 15-35重量%SrO;
iii) 10-30重量%CuO;
iv)無鉛;及
v)無鎘;
一起與
(b) 0-8重量%硼酸鋅;
(c) 0.1-4重量%B2
O3
;
(d) 0-4重量%SiO2
;
(e) 0-4重量%CaCO3
;
(f) 0-4重量%Li2
CO3
;
(g) 0-4重量%LiF;及
(h) 0-3重量%CuO;
或任何前述的氧化物同等物;無鉛且無鎘。
項目5.如項目4之無鉛且無鎘組成物,所包括的CuO係0.1-3重量%。
項目6.如項目4之無鉛且無鎘組成物,其中所包括的B2
O3
係0.2-3.5重量%B2
O3
,及所包括的CuO係0.2-2.5重量%。
項目7.一種無鉛且無鎘組成物,其包含:
(a)80-99.8重量%如項目1及4之任一項的主體材料之任何組合;
一起與
(b) 0.1-8重量%硼酸鋅;
(c) 0.1-4重量%B2
O3
;
(d) 0-4重量%SiO2
;
(e) 0-4重量%CaCO3
;
(f) 0-4重量%BaCO3
;
(g) 0-4重量%Li2
CO3
;
(h) 0-4重量%LiF;及
(i) 0-3重量%CuO;
或任何前述的氧化物同等物;無鉛且無鎘。
項目8.一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:
(a) 35-65重量%TiO2
;
(b) 25-55重量%ZnO;
(c) 0.1-15重量%Li2
O;
(d) 0.1-5重量%B2
O3
;
(e) 0-7重量%SiO2
;
(f) 0-6重量%BaO;
(g) 0-6重量%CaO;
(h) 0-5重量%LiF;及
(i) 0-5重量%CuO;
無鉛且無鎘。
項目9.如項目8之無鉛且無鎘組成物,其中:
所包括的TiO2
係47-54重量%;
所包括的ZnO係33-51重量%;
所包括的Li2
O係0.5-10重量%;
所包括的B2
O3
係0.1-3重量%;
所包括的SiO2
係0-0.3重量%;
所包括的BaO係0-0.6重量%;
所包括的CaO係0-0.4重量%;
所包括的LiF係0.1-4重量%;及
所包括的CuO係0.1-3重量%。
項目10.一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:
(a) 45-75重量%SiO2
;
(b) 15-35重量%SrO;
(c) 10-30重量%CuO;
(d) 0.1-5重量%B2
O3
;
(e) 0-6重量%CaO;
(f) 0-8重量%ZnO;
(g) 0-3重量%Li2
O;及
(h) 0-5重量%LiF;
無鉛且無鎘。
項目11.如項目10之無鉛且無鎘組成物,其中:
所包括的SiO2
係50-56重量%;
所包括的SrO係22-24重量%;
所包括的CuO係17-19重量%;
所包括的B2
O3
係0.4-2.2重量%;
所包括的CaO係0-0.4重量%;
所包括的ZnO係0-6.5重量%;
所包括的Li2
O係0.2-3重量%;及
所包括的LiF係0-5重量%。
項目12.一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含:
(a) 20-31重量%TiO2
;
(b) 16-25重量%ZnO;
(c) 9-15重量%SrO;
(d) 22-34重量%SiO2
;
(e) 6-12重量%CuO;
(f) 2-4重量%Li2
O;
(g) 0.7-2重量%B2
O3
;
(h) 0.1-0.5重量%CaO;及
(i) 0.2-1重量%LiF;
無鉛且無鎘。
項目13.一種包含前驅物混合物之無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,其包含項目8-12之任何組合。
項目14.如項目1-11之任一項的無鉛且無鎘組成物,其中於燒製後,當在大於5 GHz下測量時,該介電材料具有Q值至少800。
項目15.如項目1-13之任一項的無鉛且無鎘組成物,其中在燒製後,該介電材料具有介電常數K=5-50。
項目16.如項目1、4及7之任一項的無鉛且無鎘組成物,其中該經煅燒的主體材料具有粒子尺寸D50
範圍係0.2至5.0微米。
項目17.一種電或電子構件,其在燒製前一起包含如項目1-16之任一項的無鉛且無鎘組成物與包含下列之導電糊:
a. 60-90重量%的Ag+Pd+Pt+Au,
b. 1-10重量%選自於由下列所組成之群的添加劑:過渡金屬的矽化物、碳化物、氮化物及硼化物;
c. 0.5-10重量%的至少一種玻璃料;
d. 10-40重量%的有機部分。
項目18.如項目17之電或電子構件,其中該電或電子構件係選自於由下列所組成之群:高Q諧振器、電磁干擾濾波器、帶通濾波器、無線封裝系統及其組合。
項目19.一種形成電子構件的方法,其包含:
(a1)將如項目1-13之任一項的組成物施加至一基材;或
(a2)將一包含如項目1-13之任一項的組成物之帶狀物施加至一基材;或
(a3)壓密複數個如項目1-13之任一項的組成物之粒子以形成一單片複合基材;及
(b)在足以燒結該組成物的溫度下燒製該基材。
項目20.如項目19之方法,其中該燒製係在約800℃至約910℃的溫度下進行。
無。
無。
無。
Claims (19)
- 一種無鉛且無鎘組成物,其包含: (a) 80-99.6重量%之經煅燒的主體材料,其包含: i) 40-65重量%TiO2 ; ii) 30-60重量%ZnO; iii) 0.1-15重量%Li2 O; iv) 0-5重量%MnO2 ; v) 0-5重量%NiO; vi)無鉛;及 vii)無鎘; 一起與 (b) 0.3-8重量%硼酸鋅; (c) 0.1-4重量%B2 O3 ; (d) 0-4重量%SiO2 ; (e) 0-4重量%BaCO3 ; (f) 0-4重量%CaCO3 ; (g) 0-4重量%Li2 CO3 ; (h) 0-4重量%LiF;及 (i) 0-3重量%CuO; 或任何前述的氧化物同等物;無鉛且無鎘。
- 如請求項1之無鉛且無鎘組成物,其中所包含的LiF係0.1-4重量%,及所包含的CuO係0.1-3重量%。
- 如請求項1之無鉛且無鎘組成物,中所包含的LiF係0.2-3.5重量%,及所包含的CuO係0.2-2.5重量%。
- 一種無鉛且無鎘組成物,其包含: (a) 80-99.9重量%之經煅燒的主體材料,其包含: i) 45-75重量%SiO2 ; ii) 15-35重量%SrO; iii) 10-30重量%CuO; iv)無鉛;及 v)無鎘; 一起與 (b) 0-8重量%硼酸鋅; (c) 0.1-4重量%B2 O3 ; (d) 0-4重量%SiO2 ; (e) 0-4重量%CaCO3 ; (f) 0-4重量%Li2 CO3 ; (g) 0-4重量%LiF;及 (h) 0-3重量%CuO; 或任何前述的氧化物同等物;無鉛且無鎘。
- 如請求項4之無鉛且無鎘組成物,其中所包含的CuO係0.1-3重量%。
- 如請求項4之無鉛且無鎘組成物,其中所包含的B2 O3 係0.2-3.5重量%B2 O3 ,及所包含的CuO係0.2-2.5重量%。
- 如請求項4之無鉛且無鎘組成物,其中所包含的主體材料係80-99.8重量%及所包含的硼酸鋅係0.1-8重量%。
- 一種包含混合物的無鉛且無鎘組成物,其在燒製後形成無鉛且無鎘的介電材料,該無鉛且無鎘的介電材料包含: (a) 35-65重量%TiO2 ; (b) 25-55重量%ZnO; (c) 0.1-15重量%Li2 O; (d) 0.1-5重量%B2 O3 ; (e) 0-7重量%SiO2 ; (f) 0-6重量%BaO; (g) 0-6重量%CaO; (h) 0-5重量%LiF;及 (i) 0-5重量%CuO;且 無鉛且無鎘。
- 如請求項8之無鉛且無鎘組成物,其中: 所包含的TiO2 係47-54重量%; 所包含的ZnO係33-51重量%; 所包含的Li2 O係0.5-10重量%; 所包含的B2 O3 係0.1-3重量%; 所包含的SiO2 係0-0.3重量%; 所包含的BaO係0-0.6重量%; 所包含的CaO係0-0.4重量%; 所包含的LiF係0.1-4重量%;及 所包含的CuO係0.1-3重量%。
- 一種包含混合物的無鉛且無鎘組成物,其在燒製後形成無鉛且無鎘的介電材料,該無鉛且無鎘的介電材料包含: (a) 45-75重量%SiO2 ; (b) 15-35重量%SrO; (c) 10-30重量%CuO; (d) 0.1-5重量%B2 O3 ; (e) 0-6重量%CaO; (f) 0-8重量%ZnO; (g) 0-3重量%Li2 O;及 (h) 0-5重量%LiF;且 無鉛且無鎘。
- 如請求項10之無鉛且無鎘組成物,其中: 所包含的SiO2 係50-56重量%; 所包含的SrO係22-24重量%; 所包含的CuO係17-19重量%; 所包含的B2 O3 係0.4-2.2重量%; 所包含的CaO係0-0.4重量%; 所包含的ZnO係0-6.5重量%; 所包含的Li2 O係0.2-3重量%;及 所包含的LiF係0-5重量%。
- 一種包含混合物的無鉛且無鎘組成物,其在燒製後形成一無鉛且無鎘的介電材料,該無鉛且無鎘的介電材料包含: (a) 20-31重量%TiO2 ; (b) 16-25重量%ZnO; (c) 9-15重量%SrO; (d) 22-34重量%SiO2 ; (e) 6-12重量%CuO; (f) 2-4重量%Li2 O; (g) 0.7-2重量%B2 O3 ; (h) 0.1-0.5重量%CaO;及 (i) 0.2-1重量%LiF;且 無鉛且無鎘。
- 如請求項12之無鉛且無鎘組成物,其中在燒製後,當在大於5 GHz下測量時,該介電材料具有Q值至少800。
- 如請求項12之無鉛且無鎘組成物,其中在燒製後,該介電材料具有的介電常數K係5-50。
- 如請求項1之無鉛且無鎘組成物,其中該經煅燒的主體材料具有粒子尺寸D50 範圍係0.2至5.0微米。
- 一種電或電子構件(electric or electronic component),其在燒製前包含如請求項1之無鉛且無鎘組成物一起與包含下列的導電糊: a. 60-90重量%的Ag+Pd+Pt+Au; b. 1-10重量%選自於由下列所組成之群的添加劑:過渡金屬之矽化物、碳化物、氮化物及硼化物; c. 0.5-10重量%的至少一種玻璃料; d. 10-40重量%的有機部分。
- 如請求項16之電或電子構件,其中該電或電子構件係選自於由下列所組成之群:高Q諧振器、電磁干擾濾波器、帶通濾波器、無線封裝系統及其組合。
- 一種形成電子構件的方法,其包含: (a1)將如請求項1之組成物施加至一基材;或 (a2)將包含如請求項1之組成物的帶狀物施加至一基材;或 (a3)壓密複數個如請求項1之組成物的粒子,以形成單片複合基材;及 (b)在足以燒結該組成物的溫度下燒製該基材。
- 如請求項18之方法,其中該燒製係在溫度約800℃至約910℃下進行。
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