TW202023995A - 灌封組成物，電絕緣電氣或電子部件及其電絕緣方法 - Google Patents

灌封組成物，電絕緣電氣或電子部件及其電絕緣方法 Download PDF

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TW202023995A
TW202023995A TW108132758A TW108132758A TW202023995A TW 202023995 A TW202023995 A TW 202023995A TW 108132758 A TW108132758 A TW 108132758A TW 108132758 A TW108132758 A TW 108132758A TW 202023995 A TW202023995 A TW 202023995A
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weight
potting composition
matrix
solid components
electrical
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史蒂芬 漢奈克
喬治 海哲特曼
史堤方 卡依斯納
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德商羅伯特博斯奇股份有限公司
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Abstract

本發明係關於包含固體組分及液體組分之灌封組成物。該等固體組分包含5至30重量%之基質形成劑。此等基質形成劑選自由以下組成之群：可水合的氧化鋁、粒徑至多為5.0 μm的氧化鎂粒子、多孔氧化鎂粒子聚結物、高鋁水泥及其混合物。以100重量%之該等固體組分計，此處可水合的氧化鋁在該等基質形成劑中之比例為至少1重量%。該等固體組分亦包含70至95重量%的陶瓷填料。在用於電氣或電子部件（20）之電絕緣方法中，該部件（20）用該灌封組成物灌封（13），接著在介於60至80℃範圍內之溫度下進行熱處理（14）。本發明進一步關於電絕緣電氣或電子部件（20）。此包含具有基質之電絕緣體，陶瓷填料已包括在該基質中。該基質包含至少1重量%之氧化鋁。本發明進一步關於該灌封組成物用作用於電子終端及連接技術中之熱接觸的黏合劑之用途。

Description

灌封組成物，電絕緣電氣或電子部件及其電絕緣方法
本發明係關於一種灌封組成物，其進一步關於一種用於電氣或電子部件之電絕緣之方法。最後，本發明係關於一種尤其可以藉助於該方法來製造之電絕緣電氣或電子部件。
當前，最重要的是提高電力電子模塊及穩固感測器系統之可靠性及效率，並降低其成本。當用作封裝材料時，環氧樹脂及聚矽氧之溫度範圍限制在低於200℃。因此，已經提出了由高鋁水泥基質及陶瓷填料組成之無機封裝組成物，以提供高達350℃的溫度範圍。自DE 10 2015 223 422 A1、DE 10 2015 223 443 A1、DE 10 2015 223 449 A1、DE 10 2015 223 466 Al及DE 10 2015 223 467 A1已知此種類型的封裝組成物。然而，此等液體組成物在硬化之前的pH足夠高，以致於在灌封之後侵蝕並在某些情況下完全破壞半導體之晶片金屬化。
本發明源自以下發現：在半導體之晶片金屬化方面，當與習知無機灌封組成物進行比較時，pH尤其低於10之灌封組成物的相容性改良。所提出的灌封組成物包含固體組分及液體組分。該等固體成分包含基質形成劑及陶瓷填料。此等包含以100重量%之該等固體成分計5至30重量%、較佳10至30重量%的基質形成劑以及70至95重量%、較佳70至90重量%的陶瓷填料。
該等基質形成劑選自由以下組成之群：可水合的氧化鋁、粒徑至多為5.0 μm的氧化鎂粒子、多孔氧化鎂粒子聚結物、高鋁水泥及其混合物。以100重量%之該等固體組分計，此處可水合的氧化鋁在基質形成劑中之比例為至少1重量%，較佳至少5重量%，尤其較佳至少10重量%。
可水合的氧化鋁，亦稱為反應性氧化鋁或p型氧化鋁，由已知的過渡氧化鋁組成，可保留少量水。因此，當添加更多的水時，其會經歷水硬性固化及硬化。此以類似於水泥水合之方式進行。
粒徑至多為5.0 μm之氧化鎂粒子同樣對水具有反應性，並形成熱穩定的水合氫氧化鎂相。其粒徑可以藉助於掃描電子顯微鏡（SEM）測定。氧化鎂粒子聚結物可以藉由煅燒產生。其係多孔的，由小的初始粒子構成，而聚結物本身之尺寸可高達75.0 μm。然而，其與例如藉由熔融方法產生之無孔氧化鎂粒子的不同之處在於其對水的反應性與粒徑至多為5.0 μm的氧化鎂粒子對水的反應性相同。氧化鎂粒子聚結物之尺寸可以使用雷射粒徑儀藉由晶粒尺寸量測來測定。
高鋁水泥主要由鋁酸單鈣（CaAl2 O4 ）組成。其係由石灰石及鋁土礦在燒結過程中製成的。視燒結條件而定，其中存在的其他成分係CaAl4 O7 及Ca12 Al14 O33 。所有鋁酸鈣在此處均可以視作氧化鋁及氧化鈣之加合物。高鋁水泥尤其包含以其100重量%計至少67.8重量%的氧化鋁及至多31.0重量%的氧化鈣。至多0.8重量%的氧化矽及至多0.4重量%的氧化鐵(III)可以尤其作為其他成分存在。高鋁水泥之成分、要求及合格準則受DIN EN 14647標準的管制。
灌封組成物在半導體表面上顯示出高相容性及黏附性。此外，其表現出較低離子遷移概率。
為了在硬化的灌封組成物中形成鋁及鎂之混合氧化物，較佳地，以100重量%之該等固體組分計，此包含至少1重量%的粒徑至多為5.0 μm的氧化鎂粒子及/或多孔氧化鎂粒子聚結物作為基質形成劑中之內含物。
此外，以100重量%之該等固體組分計，灌封組成物可以尤其包含至少1重量%的高鋁水泥作為基質形成劑中之內含物。以100重量%之該等固體組分計，高鋁水泥之最大比例較佳為20重量%，尤其較佳為10重量%。可以在不顯著提高灌封組成物之pH的情況下達成高鋁水泥之此種摻合。
適合用作陶瓷填料粒子之材料尤其係氧化鋁、鋁矽酸鹽、氧化矽、碳化矽及氮化硼。僅當氧化鋁不可水合時才將其用作填料粒子。具體而言，可以使用剛玉。
因為氧化鋁具有高的熱容量，所以較佳地，以100重量%之該等固體組分計，灌封組成物包含至少45重量%的不可水合的氧化鋁作為陶瓷填料。儘管原則上可以將γ-氧化鋁用作陶瓷填料，但是較佳使用具有尤其有利的導熱性的α-氧化鋁。
此外，以100重量%之該等固體組分計，灌封組成物較佳包含1至50重量%的氧化矽作為陶瓷填料。此引起灌封組成物之pH進一步降低。此外，其允許調節其熱膨脹係數。粒徑至多為10 μm的氧化矽在此尤其較佳。
為了固化該灌封組成物，較佳地，以100重量%之該灌封組成物計，將5至20重量%的水作為液體組分添加至固體組分中。然而，灌封組成物之個別固體組分原則上亦可以水性分散體的形式添加。在此種情況下，以100重量%之該灌封組成物計，整個灌封組成物之水含量同樣較佳為5至20重量%。
視基質形成劑、陶瓷填料及水之間的比率而定，灌封組成物之稠度可能非常膨脹並且非常黏稠，從而導致流動性受損。因此，較佳地，以100重量%之灌封組成物計，灌封組成物亦包含0.5至5.0重量%的塑化劑作為液體組分或作為固體組分。合適的塑化劑尤其係聚羧酸酯醚（PCE）、聚縮合物、基於聚合物之消泡劑及潤濕劑，在此較佳係聚羧酸酯醚。
在電氣或電子部件之電絕緣方法中，部件用灌封組成物灌封，接著進行熱處理，以加速灌封組成物之固化。熱處理在介於60至80℃範圍內之溫度下進行。熱處理之持續時間較佳為至少1小時。固化時，基質形成劑與水一起形成基質，陶瓷填料已包括在該基質中。
若意欲對基質進行完全脫水，則較佳在熱處理步驟之後，在介於105至250℃範圍內之溫度下進行脫水步驟。
尤其可以藉助於該方法製造之電絕緣電氣或電子部件包含具有基質之電絕緣體，陶瓷填料已包括在該基質中。該基質包含以其100重量%計至少1重量%、較佳至少5重量%、尤其較佳至少10重量%的氧化鋁。
較佳地，以100重量%之電絕緣體計，電絕緣體僅由5至40重量%的基質組成。因此，電絕緣之其餘部分可供用於陶瓷填料，因此目的係為該基質提供良好的導熱性。
基質尤其以至少95重量%的程度包含選自由鋁、鈣、鎂、矽及氧組成之群的元素。此處的鋁可源自可水合的氧化鋁及高鋁水泥，鈣可源自高鋁水泥，鎂可源自氧化鎂粒子或氧化鎂粒子聚結物，而矽同樣可源自高鋁水泥。氧作為所有基質形成劑的成分以及經由添加的水進入基質。
灌封組成物亦可以用作用於電子終端及連接技術中的熱接觸的黏合劑。
本發明實施例
如圖1所示，本發明方法之一個具體實例自初始步驟10開始。隨後係將所需灌封組成物之固體組分混合11。在此處將可水合的氧化鋁、氧化鎂及高鋁水泥與作為陶瓷填料之α-氧化鋁及氧化矽混合。此後將固體組分與水及作為塑化劑的PCE混合12。所得灌封組成物用於電子部件20的灌封13。接著將其在乾燥烘箱中在70℃之溫度下乾燥14持續2小時。方法15結束於自乾燥烘箱中移除現在電絕緣的電子部件20。
表1中顯示步驟11及12中製造之灌封組成物之組成：
表1
      製造商 產品    重量%
                 
Al2 O3    Almatis Alphabond 300    12.5
MgO    Baikowski M30CR    2.5
高鋁水泥    Kerneos SECAR 71    5.0
                 
Al2 O3    Imerys F360    30.0
Al2 O3    Imerys F800    20.0
Al2 O3    Imerys F2000    20.0
Al2 O3    Almatis CT3000    7.5
SiO2    Heraeus Zandosil 30    2.5
                 
水             17.0
PCE    Sika Viscocrete 2810    0.8
此處使用之產品分別來自Almatis B.V.、Baikowski SAS、Heraeus GmbH & Co. KG、Imerys S.A.、Kerneos Aluminate Technologies及Sika GmbH。Alphabond 300係可水合的氧化鋁。M30CR係晶粒尺寸範圍為0至5 μm且平均粒徑為1.35 μm之氧化鎂。氧化鋁F360、F800、F2000及CT3000係不同晶粒尺寸之α-氧化鋁，其在一起可使陶瓷填料在硬化的灌封組成物中達到理想的填集密度。Zandosil 30係晶粒尺寸範圍為0至10 μm且平均粒徑為0.1 μm之氧化矽（煙霧狀二氧化矽）。
如圖2所示，灌封組成物與形成電絕緣體30反應，該電絕緣體包圍電子部件20。該絕緣體由基質31組成，該基質中已包括陶瓷填料32。基質31以10.6重量%的程度包含氧化鋁。電絕緣體30的32.1重量%由基質31組成。除了不可避免的雜質外，其僅包含元素鋁、鈣、鎂、矽及氧。
在該方法之另一未示出的具體實例中，熱處理14之後係在210℃之溫度下對電絕緣體30進行脫水。因此，將反應中未消耗的水自基質中除去；此舉稍微降低該基質在電絕緣體30中之重量比例。
在另一未示出之本發明具體實例中，灌封組成物用作用於電子終端及連接技術中之熱接觸的黏合劑。
本發明實施例描繪於附圖中，並且在以下描述中更詳細地加以解釋。 圖1係本發明方法之一個具體實例之流程圖。 圖2係根據本發明之一個具體實例之電絕緣電子部件的截面圖。
10:初始步驟
11:混合步驟
12:混合步驟
13:灌封步驟
14:乾燥步驟
15:方法
20:電子部件

Claims (14)

  1. 一種灌封組成物，其包含固體組分及液體組分，其中該等固體組分包含 以100重量%之該等固體組分計，5至30重量%之基質形成劑，該等基質形成劑選自由以下組成之群：可水合的氧化鋁、粒徑至多為5.0 μm的氧化鎂粒子、多孔氧化鎂粒子聚結物、高鋁水泥及其混合物，其中以100重量%之該等固體組分計，可水合的氧化鋁在基質形成劑中之比例為至少1重量%，以及 以100重量%之該等固體組分計，70至95重量%之陶瓷填料（32）。
  2. 如請求項1所述之灌封組成物，其特徵在於，以100重量%之該等固體組分計，粒徑至多為5.0 μm的氧化鎂粒子及/或氧化鎂粒子聚結物在該等基質形成劑中之比例為至少1重量%。
  3. 如請求項1或2所述之灌封組成物，其特徵在於，以100重量%之該等固體組分計，高鋁水泥在該等基質形成劑中之比例為至少1重量%。
  4. 如請求項1至3中任一項所述之灌封組成物，其特徵在於，以100重量%之該等固體組分計，其包含至少45重量%之不可水合的氧化鋁作為陶瓷填料（32）。
  5. 如請求項1至4中任一項所述之灌封組成物，其特徵在於，以100重量%之該等固體組分計，其包含1至50重量%之氧化矽作為陶瓷填料（32）。
  6. 如請求項1至5中任一項所述之灌封組成物，其特徵在於，以100重量%之該灌封組成物計，其包含5至20重量%之水作為液體組分。
  7. 如請求項1至6中任一項所述之灌封組成物，其特徵在於，以100重量%之該灌封組成物計，其包含0.5至5.0重量%之塑化劑作為液體組分或作為固體組分。
  8. 如請求項1至7中任一項所述之灌封組成物，其特徵在於，其pH低於10。
  9. 一種用於電氣或電子部件（20）之電絕緣之方法，其中該部件（20）用如請求項1至8中任一項所述之灌封組成物灌封（13），接著在介於60至80℃範圍內之溫度下進行熱處理（14）。
  10. 一種電絕緣電氣或電子部件（20），其具有具備基質（31）之電絕緣體（30），陶瓷填料（32）已包括在該基質中，其特徵在於，以100重量%之該基質（31）計，該基質（31）包含至少1重量%之氧化鋁。
  11. 如請求項10所述之電絕緣電氣或電子部件（20），其特徵在於，以100重量%之該電絕緣體（30）計，該電絕緣體（30）以5至40重量%的程度包含該基質（31）。
  12. 如請求項10或11所述之電絕緣電氣或電子部件（20），其特徵在於，該基質（31）以至少95重量%的程度包含選自由鋁、鈣、鎂、矽及氧組成之群的元素。
  13. 如請求項10至12中任一項所述之電絕緣電氣或電子部件（20），其特徵在於，其可以利用如請求項9所述之方法製造。
  14. 一種如請求項1至8中任一項所述之灌封組成物的用途，其用作用於電子終端及連接技術中之熱接觸的黏合劑。
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