TW202022934A - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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TW202022934A
TW202022934A TW108144169A TW108144169A TW202022934A TW 202022934 A TW202022934 A TW 202022934A TW 108144169 A TW108144169 A TW 108144169A TW 108144169 A TW108144169 A TW 108144169A TW 202022934 A TW202022934 A TW 202022934A
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wafer
polyester
based sheet
frame
sheet
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TWI813824B (zh
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原田成規
松澤稔
木內逸人
淀良彰
荒川太朗
上里昌充
河村慧美子
藤井祐介
宮井俊輝
大前卷子
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日商迪思科股份有限公司
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Abstract

[課題]在不使品質降低的情形下形成器件晶片。 [解決手段]一種晶圓的加工方法，讓已將複數個器件形成在藉由分割預定線所區劃出的正面的各區域中之晶圓分割成一個個的器件晶片，前述晶圓的加工方法具備以下步驟：聚酯系片材配設步驟，將晶圓定位在具有容置晶圓之開口的框架的該開口內，並將聚酯系片材配設在晶圓的背面與框架的外周；一體化步驟，將該聚酯系片材加熱並藉由熱壓接來將晶圓及該框架透過該聚酯系片材一體化；分割步驟，沿著該分割預定線照射對該晶圓具有吸收性之波長的雷射光束，而形成分割溝來將該晶圓分割成一個個的器件晶片；及拾取步驟，將該聚酯系片材加熱，並將器件晶片頂堆，而從該聚酯系片材拾取該器件晶片。

Description

晶圓的加工方法
發明領域 本發明是有關於一種讓已將複數個器件形成在藉由分割預定線所區劃出的正面的各區域中之晶圓分割成一個個的器件晶片之晶圓的加工方法。
發明背景 在使用於行動電話或者個人電腦等之電子機器的器件晶片的製造步驟中，首先是將複數條交叉的分割預定線(切割道)設定在由半導體等之材料所構成的晶圓的正面。並且，在以該分割預定線所區劃的各區域中形成IC(積體電路，Integrated Circuit)、LSI(大型積體電路，Large-Scale Integrated circuit)、LED(發光二極體，Light Emitting Diode)等器件。
之後，將對具有開口之環狀的框架黏貼成堵塞該開口之稱為切割膠帶的黏著膠帶貼附在該晶圓的背面，而形成晶圓、黏著膠帶及環狀的框架成為一體的框架單元。然後，當將包含於框架單元的晶圓沿著該分割預定線加工來分割後，即形成一個個的器件晶片。
在晶圓的分割上可使用例如雷射加工裝置(參照專利文獻1)。雷射加工裝置具備隔著黏著膠帶來保持晶圓的工作夾台、及將對晶圓具有吸收性之波長的雷射光束照射至該晶圓的雷射加工單元。
在分割晶圓時，是將框架單元載置於工作夾台之上，並且使晶圓隔著黏著膠帶而保持在工作夾台。然後，一邊使工作夾台及雷射加工單元沿著平行於工作夾台之上表面的方向相對移動，一邊從該雷射加工單元對晶圓照射該雷射光束。當照射雷射光束後，即可藉由燒蝕而沿著各分割預定線在晶圓形成分割溝，而將晶圓分割。
之後，將框架單元從雷射加工裝置搬出，且施行對黏著膠帶照射紫外線等的處理來使黏著膠帶的黏著力降低，並拾取器件晶片。作為器件晶片之生產效率較高的加工裝置，已知有可以將晶圓的分割、及對黏著膠帶之紫外線的照射以一個裝置來連續實施的加工裝置(參照專利文獻2)。已從黏著膠帶上被拾取的器件晶片是組裝在預定的配線基板等。 先前技術文獻 專利文獻
專利文獻1：日本特開平10-305420號公報 專利文獻2 ：日本專利特許第3076179號公報
發明概要 發明欲解決之課題 黏著膠帶包含以例如氯乙烯片材等所形成的基材層、及配設於該基材層上的糊層。在雷射加工裝置中，為了藉由燒蝕加工來確實地分割晶圓，而將雷射光束以可以確實地形成從晶圓的正面至到達背面的分割溝的條件來照射於晶圓。因此，在形成之分割溝的下方或其周圍，會因由雷射光束之照射所造成的熱的影響而讓黏著膠帶的糊層熔融，且糊層的一部分固著在由晶圓形成的器件晶片的背面側。
在此情況下，在從黏著膠帶拾取器件晶片時即使實施對黏著膠帶照射紫外線等的處理，也會導致在所拾取之器件晶片的背面側殘存有糊層的該一部分。因此，器件晶片的品質降低即成為問題。
本發明是有鑒於所述的問題點而作成的發明，其目在於提供一種晶圓的加工方法，前述晶圓的加工方法是不讓糊層附著在形成之器件晶片的背面側，以免在器件晶片產生源自糊層之附著的品質的降低。 用以解決課題之手段
根據本發明之一態樣，是提供一種晶圓的加工方法，前述晶圓的加工方法是讓已將複數個器件形成在藉由分割預定線所區劃出的正面的各區域中之晶圓分割成一個個的器件晶片，前述晶圓的加工方法的特徵在於具備以下步驟： 聚酯系片材配設步驟，將晶圓定位在具有容置晶圓之開口的框架的該開口內，並將聚酯系片材配設在該晶圓的背面及該框架的外周； 一體化步驟，將該聚酯系片材加熱並藉由熱壓接來將該晶圓及該框架透過該聚酯系片材一體化； 分割步驟，沿著該分割預定線對該晶圓照射對該晶圓具有吸收性之波長的雷射光束，而形成分割溝來將該晶圓分割成一個個的器件晶片；及 拾取步驟，在該聚酯系片材之對應於各器件晶片的一個個的區域中，將該聚酯系片材加熱，並從該聚酯系片材側將該器件晶片頂推，而從該聚酯系片材拾取該器件晶片。
較佳的是，在該一體化步驟中，藉由紅外線的照射而實施該熱壓接。
又，較佳的是，在該一體化步驟中，在實施一體化後，將從該框架之外周超出的聚酯系片材去除。
又，較佳的是，在該拾取步驟中，是將該聚酯系片材擴張，以將各器件晶片間的間隔擴大。
又，較佳的是，該聚酯系片材是聚對苯二甲酸乙二酯片材、聚萘二甲酸乙二酯片材之任一種。
此外，較佳的是，在該一體化步驟中，在該聚酯系片材為該聚對苯二甲酸乙二酯片材的情況下，加熱溫度為250℃~270℃，在該聚酯系片材為該聚萘二甲酸乙二酯片材的情況下，加熱溫度為160℃~180℃。
又，較佳的是，該晶圓是以矽(Si)、氮化鎵(GaN)、砷化鎵(GaAs)、玻璃之任一種所構成。 發明效果
在本發明之一態樣的晶圓的加工方法中，是在形成框架單元時，不使用具有糊層的黏著膠帶，而是使用未具備糊層的聚酯系片材來將框架及晶圓一體化。透過聚酯系片材來使框架及晶圓一體化的一體化步驟，是藉由熱壓接來實現。
實施一體化步驟後，對晶圓照射對晶圓具有吸收性之波長的雷射光束，而藉由燒蝕形成沿著分割預定線之分割溝來分割該晶圓。之後，在聚酯系片材之對應於各器件晶片的一個個的區域中，將該聚酯系片材加熱，並從該聚酯系片材側將該器件晶片頂推，而從該聚酯系片材拾取器件晶片。所拾取的器件晶片是各自組裝到預定的組裝對象。再者，在拾取時，當將聚酯系片材加熱時，可以讓聚酯系片材的黏著力降低而減輕施加於器件晶片的負荷。
當對晶圓實施燒蝕加工後，藉由雷射光束的照射而產生之熱即在分割溝之下方或其附近傳導至聚酯系片材。然而，因為聚酯系片材不具備糊層，所以不會有該糊層熔融而固著於器件晶片的背面側之情形。
也就是說，根據本發明的一態樣，因為可以使用不具備糊層的聚酯系片材來形成框架單元，所以不需要具備有糊層的黏著膠帶，結果，不會產生起因於糊層之附著的器件晶片的品質降低。
從而，根據本發明之一態樣，可提供一種晶圓的加工方法，前述晶圓的加工方法是不讓糊層附著在形成之器件晶片的背面側，以免在器件晶片產生源自糊層之附著的品質的降低。
用以實施發明之形態 參照附加圖式，說明本發明的一個態樣之實施形態。首先，說明以本實施形態之晶圓的加工方法所加工之晶圓。圖1是示意地顯示晶圓1的立體圖。
晶圓1是例如由Si(矽)、SiC(碳化矽)、GaN(氮化鎵)、GaAs(砷化鎵)、或者是其他之半導體等的材料、又或是藍寶石、玻璃、石英等的材料所構成之大致圓板狀的基板等。該玻璃可為例如鹼玻璃、無鹼玻璃、鈉鈣玻璃、鉛玻璃、硼矽酸玻璃、石英玻璃等。
晶圓1的正面1a是以格子狀地配置排列之複數條分割預定線3所區劃。又，在晶圓1的正面1a之以分割預定線3所區劃出的各個區域中可形成IC或LSI、LED等的器件5。在本實施形態之晶圓1的加工方法中，是藉由燒蝕加工而在晶圓1上形成沿著分割預定線3的分割溝來分割晶圓1，而形成一個個的器件晶片。
在將晶圓1搬入實施燒蝕加工的雷射加工裝置12(參照圖8)前，將晶圓1、聚酯系片材及框架一體化而形成框架單元。晶圓1是以框架單元的狀態來搬入雷射加工裝置，並進行加工。所形成之一個個的器件晶片是被聚酯系片材所支撐。之後，藉由將聚酯系片材擴張，以使器件晶片間的間隔擴大，並藉由拾取裝置來拾取器件晶片。
環狀的框架7(參照圖2等)是以例如金屬等之材料所形成，並且具備直徑比晶圓1的直徑更大的開口7a。在形成框架單元時，是將晶圓1定位在框架7的開口7a內，而容置在開口7a。
聚酯系片材9(參照圖3等)是具有柔軟性的樹脂系片材，且正背面為平坦。並且，聚酯系片材9具有比框架7的外徑更大的直徑，且不具備糊層。聚酯系片材9是將二羧酸(具有2個羧基的化合物)及二元醇(具有2個羥基的化合物)作為單體所合成之聚合物的片材，可為例如聚對苯二甲酸乙二酯片材、或聚萘二甲酸乙二酯片材等之對可見光為透明或者半透明的片材。但是，聚酯系片材9並非限定於此，亦可為不透明。
因為聚酯系片材9不具備黏著性，所以在室溫下無法貼附在晶圓1及框架7。但是，因為聚酯系片材9具有熱可塑性，所以若一邊施加預定的壓力，一邊在已使其與晶圓1及框架7接合的狀態下加熱至熔點附近的溫度，會部分地熔融而可以接著於晶圓1及框架7。於是，在本實施形態之晶圓1的加工方法中，是藉由如以上的熱壓接，將晶圓1、框架7及聚酯系片材9一體化來形成框架單元。
接著，說明本實施形態之晶圓1的加工方法的各步驟。首先，是為了使晶圓1、聚酯系片材9及框架7一體化的準備，而實施聚酯系片材配設步驟。圖2是示意地顯示將晶圓1及框架7定位在工作夾台2的保持面2a上之情形的立體圖。如圖2所示，聚酯系片材配設步驟是在上部具備保持面2a的工作夾台2上實施。
工作夾台2於上部中央具備直徑比框架7的外徑更大的多孔質構件。該多孔質構件的上表面是成為工作夾台2的保持面2a。工作夾台2是如圖3所示地於內部具有一端通到該多孔質構件的排氣路，且於該排氣路的另一端側配設吸引源2b。於排氣路上配設有切換連通狀態及切斷狀態的切換部2c，當切換部2c為連通狀態時，藉由吸引源2b對放置於保持面2a的被保持物所產生的負壓即可作用，而將被保持物吸引保持在工作夾台2。
在聚酯系片材配設步驟中，首先，是如圖2所示，將晶圓1及框架7載置於工作夾台2的保持面2a上。此時，將晶圓1的正面1a側朝向下方，並且將晶圓1定位在框架7的開口7a內。接著，在晶圓1的背面1b及框架7的外周配設聚酯系片材9。圖3是示意地顯示聚酯系片材配設步驟的立體圖。如圖3所示，以覆蓋晶圓1及框架7的方式，來將聚酯系片材9配設在兩者之上。
再者，在聚酯系片材配設步驟中，是使用直徑比工作夾台2的保持面2a更大的聚酯系片材9。這是因為在之後所實施的一體化步驟中使由工作夾台2所形成的負壓作用在聚酯系片材9時，若未將保持面2a的整體以聚酯系片材9來覆蓋的話，會導致負壓從間隙漏出，而無法適當地對聚酯系片材9施加壓力的緣故。
在本實施形態之晶圓1的加工方法中，接著是實施一體化步驟，前述一體化步驟是將聚酯系片材9加熱，並藉由熱壓接來將晶圓1及該框架7透過聚酯系片材9而一體化。圖4是示意地顯示一體化步驟之一例的立體圖。在圖4中，是將可以通過對於可見光為透明或者半透明之聚酯系片材9來目視辨識的構成以虛線表示。
在一體化步驟中，首先，是使工作夾台2的切換部2c作動來設為連通狀態，而使由吸引源2b所形成的負壓作用於聚酯系片材9，其中前述連通狀態是將吸引源2b連接於工作夾台2之上部的多孔質構件的狀態。如此一來，即藉由大氣壓來使聚酯系片材9相對於晶圓1及框架7密合。
接著，一邊藉由吸引源2b吸引聚酯系片材9，一邊將聚酯系片材9加熱來實施熱壓接。聚酯系片材9的加熱是如例如圖4所示，藉由配設在工作夾台2之上方的熱風槍4來實施。
熱風槍4是在內部具備電熱線等的加熱組件及風扇等的送風機構，而可以將空氣加熱並噴射。當一邊使負壓作用在聚酯系片材9，一邊藉由熱風槍4從上面對聚酯系片材9供給熱風4a，而將聚酯系片材9加熱至預定的溫度時，可將聚酯系片材9熱壓接於晶圓1及框架7。
又，聚酯系片材9的加熱亦可藉由其他方法來實施，例如可藉由從上方以加熱至預定的溫度的構件來按壓晶圓1及框架7而實施。圖5是示意地顯示一體化步驟的另一例的立體圖。在圖5中，是將可以通過對於可見光為透明或者半透明之聚酯系片材9來目視辨識的構成以虛線表示。
在圖5所示之一體化步驟中，是使用例如在內部具備熱源的加熱滾輪6。在圖5所示之一體化步驟中，也是首先使藉由吸引源2b所形成的負壓作用在聚酯系片材9，並藉由大氣壓來使聚酯系片材9密合於晶圓1及框架7。
之後，將加熱滾輪6加熱至預定的溫度，並將該加熱滾輪6載置於工作夾台2的保持面2a的一端。然後，使加熱滾輪6旋轉，並讓加熱滾輪6在工作夾台2上從該一端滾動至另一端。如此一來，可將聚酯系片材9熱壓接於晶圓1及框架7。此時，當藉由加熱滾輪6朝將聚酯系片材9往下壓的方向施加力時，即可用比大氣壓更大的壓力來實施熱壓接。再者，較佳的是，將加熱滾輪6的表面以氟樹脂被覆。
又，亦可使用在內部具備熱源且具有平坦之底板的熨斗狀的按壓構件來取代加熱滾輪6，而實施聚酯系片材9的熱壓接。在此情況下，將該按壓構件加熱至預定的溫度來作為熱板，並從上方以該按壓構件按壓保持在工作夾台2的聚酯系片材9。
聚酯系片材9的加熱亦可進一步藉由其他的方法來實施。圖6是示意地顯示一體化步驟的又另一例的立體圖。在圖6中，是將可以通過對於可見光為透明或者半透明之聚酯系片材9來目視辨識的構成以虛線表示。在圖6所示之一體化步驟中，是使用配設在工作夾台2的上方的紅外線燈8來加熱聚酯系片材9。紅外線燈8可照射至少聚酯系片材9之材料具有吸收性之波長的紅外線8a。
在圖6所示之一體化步驟中，也是首先使藉由吸引源2b所形成的負壓作用在聚酯系片材9，而使聚酯系片材9密合於晶圓1及框架7。接著，使紅外線燈8作動，以對聚酯系片材9照射紅外線8a來加熱聚酯系片材9。如此一來，可將聚酯系片材9熱壓接於晶圓1及框架7。
當藉由任一種方法來將聚酯系片材9加熱至其熔點附近的溫度時，即可將聚酯系片材9熱壓接於晶圓1及框架7。將聚酯系片材9熱壓接之後，使切換部2c作動而解除工作夾台2的多孔質構件與吸引源2b的連通狀態，並解除由工作夾台2所進行的吸附。
接著，將從框架7之外周超出的聚酯系片材9切斷並去除。圖7(A)是示意地顯示將聚酯系片材9切斷之情形的立體圖。切斷是如圖7(A)所示，使用圓環狀的刀具(cutter)10。該刀具10具備貫通孔，且可繞著貫穿於該貫通孔的旋轉軸旋轉。
首先，將圓環狀的刀具10定位在框架7的上方。此時，將刀具10的旋轉軸對齊於工作夾台2的徑方向。接著，使刀具10下降，並以框架7及刀具10將聚酯系片材9夾入，而將聚酯系片材9切斷。如此一來，可在聚酯系片材9形成切斷痕跡9a。
此外，使刀具10沿著框架7於框架7的開口7a的周圍繞行一圈，而藉由切斷痕跡9a包圍聚酯系片材9之預定的區域。然後，以留下聚酯系片材9之該區域的方式，將切斷痕跡9a之外周側的區域的聚酯系片材9去除。如此一來，可以將聚酯系片材9之包含從框架7之外周超出之區域在內的不要的部分去除。
再者，在聚酯系片材的切斷上，亦可使用超音波刀具，並將以超音波頻帶之頻率來使上述之圓環狀的刀具10振動的振動源連接於該刀具10。又，在切斷聚酯系片材9時，亦可為了容易地切斷，而將該聚酯系片材9冷卻來使其硬化。藉由以上，可形成將晶圓1及框架7透過聚酯系片材9一體化的框架單元11。圖7(B)是示意地顯示所形成的框架單元11的立體圖。
再者，在實施熱壓接時，宜將聚酯系片材9加熱至其熔點以下的溫度。這是因為若加熱溫度超過熔點時，會有下述情形的緣故：聚酯系片材9熔化而變得無法維持片材的形狀。又，較佳的是，將聚酯系片材9加熱至其軟化點以上的溫度。這是因為若加熱溫度未達到軟化點的話，會無法適當地實施熱壓接。也就是，較佳的是，將聚酯系片材9加熱至其軟化點以上且其熔點以下的溫度。
此外，也有下述情況：一部分的聚酯系片材9不具有明確的軟化點。於是，在實施熱壓接時，宜將聚酯系片材9加熱至比其熔點低20℃的溫度以上且其熔點以下的溫度。
又，在聚酯系片材9為聚對苯二甲酸乙二酯片材的情況下，宜將加熱溫度設為250℃~270℃。又，在該聚酯系片材9為聚萘二甲酸乙二酯片材的情況下，宜將加熱溫度設為160℃~180℃。
在此，加熱溫度是指在實施一體化步驟時之聚酯系片材9的溫度。雖然在例如熱風槍4、加熱滾輪6及紅外線燈8等的熱源中，已將可以設定輸出溫度的機種提供於實用，但即便使用該熱源來加熱聚酯系片材9，也會有下述情況：聚酯系片材9的溫度並未到達所設定之該輸出溫度。於是，為了將聚酯系片材9加熱至預定的溫度，亦可將熱源的輸出溫度設定得比聚酯系片材9的熔點更高。
接著，在本實施形態之晶圓的加工方法中，實施分割步驟，前述分割步驟是對已成為框架單元11之狀態的晶圓1進行燒蝕加工，而形成沿著分割預定線3的分割溝來分割該晶圓1。分割步驟是例如以圖8所示之雷射加工裝置來實施。圖8是示意地顯示分割步驟的立體圖。
雷射加工裝置12具備對晶圓1進行燒蝕加工的雷射加工單元14、及保持晶圓1的工作夾台(未圖示)。雷射加工單元14具備可以振盪產生雷射的雷射振盪器(未圖示)，而可以出射對晶圓1具有吸收性之波長的(晶圓1可以吸收之波長的)雷射光束16。該工作夾台可以沿著平行於上表面的方向移動(加工進給)。
雷射加工單元14是將從該雷射振盪器出射之雷射光束16照射至已保持於該工作夾台的晶圓1。雷射加工單元14所具備之加工頭14a具有將雷射光束16聚光於晶圓1之預定的高度位置的機構。
在對晶圓1進行燒蝕加工時，是將框架單元11載置於工作夾台之上，並且使晶圓1隔著聚酯系片材9而保持在工作夾台。然後，使工作夾台旋轉，並將晶圓1的分割預定線3對齊於雷射加工裝置12的加工進給方向。又，將工作夾台及雷射加工單元14的相對位置調整成將加工頭14a配設在分割預定線3之延長線的上方。
接著，一邊從雷射加工單元14對晶圓1照射雷射光束16一邊使工作夾台、及雷射加工單元14沿著平行於工作夾台之上表面的加工進給方向相對地移動。如此一來，即可將雷射光束16沿著分割預定線3照射於晶圓1，而可藉由燒蝕加工在晶圓1形成沿著分割預定線3的分割溝3a。
分割步驟中的雷射光束16的照射條件是設定為例如以下之形式。然而，雷射光束16的照射條件並非限定於此。 波長          ：355nm 重複頻率   ：50kHz 平均輸出   ：5W 進給速度   ：200mm/秒
在沿著一條分割預定線3實施燒蝕加工後，使工作夾台及雷射加工單元14相對地朝與加工進給方向為垂直之分度進給方向移動，並沿著其他分割預定線3同樣地實施晶圓1的燒蝕加工。於沿著一個方向之全部的分割預定線3上沿著來形成分割溝3a後，使工作夾台繞著垂直於保持面的軸旋轉，並同樣地於沿著其他方向之分割預定線3上沿著來對晶圓1進行燒蝕加工。
當沿著晶圓1之全部的分割預定線3將晶圓1燒蝕加工後，分割步驟即完成。當完成分割步驟，而沿著全部的分割預定線3在晶圓1上形成從正面1a至到達背面1b的分割溝3a後，即可將晶圓1分割而形成一個個的器件晶片。
當藉由雷射加工單元14來對晶圓1實施燒蝕加工後，會從雷射光束16的被照射處產生源自晶圓1的加工屑，且該加工屑飛散至該被照射處周圍並附著於晶圓1的正面1a。在對晶圓1實施燒蝕加工後，即使藉由後述之洗淨單元洗淨晶圓1的正面1a，欲完全去除所附著的加工屑仍然不容易。若從晶圓1形成之器件晶片殘存有該加工屑，器件晶片的品質即降低。
於是，亦可在欲以雷射加工裝置12進行燒蝕加工之晶圓1的正面1a預先塗布有水溶性的液狀樹脂，前述水溶性的液狀樹脂是作為保護晶圓1之正面1a的保護膜而發揮功能。因為若在晶圓1之正面1a塗布該液狀樹脂後，實施燒蝕加工時飛散之加工屑即附著於該液狀樹脂的上表面，所以加工屑未直接附著於晶圓1之正面1a。並且，可藉由接著說明的洗淨單元，將該加工屑連同該液狀樹脂一起去除。
雷射加工裝置12亦可具備洗淨單元(未圖示)。在此情況下，可將已藉由雷射加工單元14進行燒蝕加工的晶圓1搬送至該洗淨單元，而藉由該洗淨單元來洗淨。例如洗淨單元具備保持框架單元11的洗淨工作台、以及可以在框架單元11的上方往返移動的洗淨水供給噴嘴。
當一邊使洗淨工作台繞著垂直於保持面的軸旋轉，並從洗淨水供給噴嘴將純水等的洗淨液供給到晶圓1，一邊使洗淨水供給噴嘴在通過該保持面之中央的上方的路徑上於水平方向上往返移動時，可以將晶圓1的正面1a側洗淨。
在本實施形態之晶圓1的加工方法中，接著，是實施從聚酯系片材9拾取一個個的該器件晶片的拾取步驟。在拾取步驟中，是使用圖9下部所示的拾取裝置18。圖9是示意地顯示框架單元11往拾取裝置18之搬入的立體圖。
拾取裝置18具備圓筒狀的圓筒20及框架保持單元22，前述圓筒20具有比晶圓1的直徑更大的直徑，前述框架保持單元22包含框架支撐台26。框架保持單元22的框架支撐台26具備直徑比該圓筒20的直徑更大的開口，且是配設在與該圓筒20的上端部同樣的高度，而從外周側包圍該圓筒20的上端部。
在框架支撐台26的外周側配設有夾具24。當將框架單元11載置於框架支撐台26之上，且藉由夾具24把持框架單元11的框架7後，即可將框架單元11固定在框架支撐台26。
框架支撐台26是被沿著鉛直方向伸長的複數支桿件28所支撐，在各桿件28的下端部配設有使該桿件28升降的汽缸30。複數個汽缸30是支撐在圓板狀的基座32。當使各汽缸30作動時，可將框架支撐台26相對於圓筒20下拉。
在圓筒20的內部配設有頂推機構34，前述頂推機構34是從下方將支撐在聚酯系片材9的器件晶片頂推。頂推機構34於上端具備加熱部34a，且前述加熱部34a內含帕耳帖(Peltier)元件、電熱線等之熱源。又，在圓筒20的上方配設有可以吸引保持器件晶片的夾頭36(參照圖10(B))。頂推機構34及夾頭36可在沿著框架支撐台26之上表面的水平方向上移動。又，夾頭36是透過切換部36b(參照圖10(B))而連接於吸引源36a(參照圖10(B))。
在拾取步驟中，首先是使汽缸30作動來調節框架支撐台26的高度，以使拾取裝置18的圓筒20之上端的高度，與框架支撐台26之上表面的高度一致。接著，將從雷射加工裝置12所搬出的框架單元11載置於拾取裝置18的圓筒20及框架支撐台26之上。
之後，藉由夾具24將框架單元11的框架7固定在框架支撐台26之上。圖10(A)是示意地顯示已固定於框架支撐台26之上的框架單元11的截面圖。於晶圓1上是藉由分割步驟形成分割溝3a而進行分割。
接著，使汽缸30作動，以將框架保持單元22的框架支撐台26相對於圓筒20下拉。如此一來，如圖10(B)所示，可將聚酯系片材9朝外周方向擴張。圖10(B)是示意地顯示拾取步驟的截面圖。
當將聚酯系片材9朝外周方向擴張後，即可將支撐在聚酯系片材9之各器件晶片1c的間隔擴大。如此一來，器件晶片1c彼此變得難以接觸，並使一個個的器件晶片1c的拾取變得較容易。然後，決定成為拾取之對象的器件晶片1c，並且使頂推機構34移動至該器件晶片1c的下方，且使夾頭36移動至該器件晶片1c的上方。
之後，使加熱部34a作動以使溫度上升，使加熱部34a接觸於聚酯系片材9之對應於該器件晶片1c的區域來加熱該區域。此外，藉由使頂推機構34作動，而從聚酯系片材9側將該器件晶片1c頂推。然後，使切換部36b作動而使夾頭36連通於吸引源36a。如此一來，可藉由夾頭36吸引保持該器件晶片1c，而從聚酯系片材9拾取器件晶片1c。所拾取的一個個的器件晶片1c是在之後組裝到預定的配線基板等來使用。
再者，於藉由加熱部34a加熱聚酯系片材9的該區域時，是例如將該區域加熱至聚酯系片材9的熔點附近的溫度。因為聚酯系片材9在熔點附近的溫度之期間會降低黏著力，所以可將從聚酯系片材9的剝離時施加於器件晶片的負荷減輕。
在例如使用黏著膠帶來形成框架單元11的情況下，在分割步驟中藉由雷射光束16的照射而產生的熱傳導到該黏著膠帶，使得黏著膠帶的糊層熔融並固著於器件晶片的背面側。然後，由糊層之附著所造成的器件晶片的品質的降低即成為問題。
相對於此，根據本實施形態之晶圓的加工方法，因為藉由熱壓接而讓使用了不具備糊層之聚酯系片材的框架單元的形成變得可能，所以不需要具備有糊層的黏著膠帶。結果，不會產生因糊層對背面側的附著所造成的器件晶片的品質降低。
再者，本發明並不限定於上述實施形態之記載，可作各種變更而實施。例如在上述實施形態中，雖然說明了聚酯系片材9可為例如聚對苯二甲酸乙二酯片材、或聚萘二甲酸乙二酯片材的情況，但本發明之一態樣並不限定於此。例如，聚酯系片材亦可使用其他的材料，而亦可為聚對苯二甲酸丙二酯片材、或聚對苯二甲酸丁二酯片材、聚萘二甲酸丁二酯(polybutylene naphthalate)片材等。
另外，上述實施形態之構造、方法等，只要在不脫離本發明的目的之範圍內，均可適當變更而實施。
1:晶圓 1a:正面 1b:背面 1c:器件晶片 2:工作夾台 2a:保持面 2b、36a:吸引源 2c、36b:切換部 3:分割預定線 3a:分割溝 4:熱風槍 4a:熱風 5:器件 6:加熱滾輪 7:框架 7a:開口 8:紅外線燈 8a:紅外線 9:聚酯系片材 9a:切斷痕跡 10:刀具 11:框架單元 12:雷射加工裝置 14:雷射加工單元 14a:加工頭 16:雷射光束 18:拾取裝置 20:圓筒 22:框架保持單元 24:夾具 26:框架支撐台 28:桿件 30:汽缸 32:基座 34:頂推機構 34a:加熱部 36:夾頭
圖1是示意地顯示晶圓的立體圖。 圖2是示意地顯示將晶圓及框架定位在工作夾台的保持面上之情形的立體圖。 圖3是示意地顯示聚酯系片材配設步驟的立體圖。 圖4是示意地顯示一體化步驟之一例的立體圖。 圖5是示意地顯示一體化步驟之一例的立體圖。 圖6是示意地顯示一體化步驟之一例的立體圖。 圖7(A)是示意地顯示將聚酯系片材切斷之情形的立體圖，圖7(B)是示意地顯示所形成的框架單元的立體圖。 圖8是示意地顯示分割步驟的立體圖。 圖9是示意地顯示框架單元往拾取裝置之搬入的立體圖。 圖10(A)是示意地顯示已固定在框架支撐台之上的框架單元的截面圖，圖10(B)是示意地顯示拾取步驟的截面圖。
1:晶圓
1b:背面
2:工作夾台
2a:保持面
2b:吸引源
2c:切換部
4:熱風槍
4a:熱風
7:框架
7a:開口
9:聚酯系片材

Claims (7)

  1. 一種晶圓的加工方法，讓已將複數個器件形成在藉由分割預定線所區劃出的正面的各區域中之晶圓分割成一個個的器件晶片，前述晶圓的加工方法的特徵在於具備以下步驟： 聚酯系片材配設步驟，將晶圓定位在具有容置晶圓之開口的框架的該開口內，並將聚酯系片材配設在該晶圓的背面及該框架的外周； 一體化步驟，將該聚酯系片材加熱並藉由熱壓接來將該晶圓及該框架透過該聚酯系片材一體化； 分割步驟，沿著該分割預定線對該晶圓照射對該晶圓具有吸收性之波長的雷射光束，而形成分割溝來將該晶圓分割成一個個的器件晶片；及 拾取步驟，在該聚酯系片材之對應於各器件晶片的一個個的區域中，將該聚酯系片材加熱，並從該聚酯系片材側將該器件晶片頂推，而從該聚酯系片材拾取該器件晶片。
  2. 如請求項1之晶圓的加工方法，其中在該一體化步驟中，藉由紅外線的照射而實施該熱壓接。
  3. 如請求項1之晶圓的加工方法，其中在該一體化步驟中，在實施一體化後，將從該框架之外周超出的聚酯系片材去除。
  4. 如請求項1之晶圓的加工方法，其中在該拾取步驟中，是將該聚酯系片材擴張，以將各器件晶片間的間隔擴大。
  5. 如請求項1之晶圓的加工方法，其中該聚酯系片材是聚對苯二甲酸乙二酯片材、聚萘二甲酸乙二酯片材之任一種。
  6. 如請求項5之晶圓的加工方法，其中在該一體化步驟中，在該聚酯系片材為該聚對苯二甲酸乙二酯片材的情況下，加熱溫度為250℃~270℃，在該聚酯系片材為該聚萘二甲酸乙二酯片材的情況下，加熱溫度為160℃~180℃。
  7. 如請求項1之晶圓的加工方法，其中該晶圓是以矽、氮化鎵、砷化鎵、玻璃之任一種所構成。
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