TW202018117A - 成膜裝置及成膜方法 - Google Patents

成膜裝置及成膜方法 Download PDF

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TW202018117A
TW202018117A TW108128240A TW108128240A TW202018117A TW 202018117 A TW202018117 A TW 202018117A TW 108128240 A TW108128240 A TW 108128240A TW 108128240 A TW108128240 A TW 108128240A TW 202018117 A TW202018117 A TW 202018117A
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Taiwan
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gas
film
mounting table
ring
forming
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TW108128240A
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English (en)
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桑田拓岳
慶本裕樹
布重裕
藤井康
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日商東京威力科創股份有限公司
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Publication of TW202018117A publication Critical patent/TW202018117A/zh

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    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

在將成膜氣體供給至載置部所載置之基板以進行成膜時，抑制成膜氣體繞入至載置部之下方，而附著於載置部之情事。 在從與載置部對向之成膜氣體供給部來將成膜氣體供給至處理容器內之載置部所載置的基板，以進行成膜的成膜裝置中，會透過間隙並以圍繞載置部之周圍的方式來設置第1環狀體，並在第1環狀體之內周緣設置會朝向下方延伸的第2環狀體。又，會從載置部周緣設置包含有會從第2環狀體之內周面橫跨下端面來延伸的流道形成面之第3環狀體。

Description

成膜裝置及成膜方法
本揭露係相關於成膜在基板的技術領域。
已知一種對為基板之半導體晶圓(以下稱為「晶圓」)進行成膜的成膜裝置，係設置：載置台，係將晶圓載置於為真空氛圍之處理容器內；以及處理氣體供給部，係與載置台對向。在此般成膜裝置中依序對晶圓供給原料氣體以及會與原料氣體反應之反應氣體，來在基板表面沉積反應生成物之分子層，以得到薄膜。
專利文獻1所記載之成膜裝置係朝向晶座所載置之基板來供給氣體以進行成膜的成膜裝置，會將晶座之邊緣及以圍繞晶座之方式所設置的環體之邊緣成為互補的階梯狀。藉此，便記載有可在環體與晶座之間確保彎曲為楔型的微小間隙，而可藉由在通過微小間隙期間所產生的亂流，來使微小間隙內的沉積物層之附著量變多，並補集會朝下部空間進入的原料氣體之成膜裝置。
又，專利文獻2記載之成膜裝置係對處理容器內之基板供給反應氣體以進行成膜處理的成膜裝置，具備有：載置台，係構成為在處理位置與基板之收授位置自由升降；以及圍繞構件，係圍繞處理位置之載置台周圍，而區隔出處理空間與載置台之下部側空間。又，設置有會在載置台上升至處理位置時，其內緣部會相接於載置台上之基板的周緣部，而藉由從圍繞構件上面被抬升來防止反應氣體朝基板內側繞入之夾環，夾環則設置能抑制反應氣體從夾環與圍繞構件之間隙進入的筒狀壁部。
[先前技術文獻] [專利文獻] 專利文獻1：日本特開2000-12470號公報 專利文獻2：日本特開2014-98202號公報
本揭露係在此般情事下所完成者，能提供一種在將成膜氣體供給至載置部所載置之基板以進行成膜時，會抑制成膜氣體繞入至載置部之下方，而附著於載置部之情事的技術。
本揭露之成膜裝置係具備： 真空容器，係形成真空氛圍之處理室； 載置部，係將基板載置於上側，藉由支撐部來讓下側之中心部被該處理室所支撐並使下側之周緣部從該真空容器之底部分離設置； 成膜氣體供給部，係對向該載置部而設置於該載置部上方，並將成膜氣體供給至該基板以進行成膜； 排氣口，係在該真空容器之側壁沿著該載置台之外周來加以開口； 第1環狀體，係從該真空容器之側壁的該排氣口之下方朝向該載置台突出，內周緣部會夾置著間隙來對向於該載置台之側周，而將該處理室上下區分； 第2環狀體，係以使下端部位在較該載置台之周緣部要靠下方的方式，來形成為從該第1環狀體之內周緣部來延伸至下方；以及 第3環狀體，係以具備從該第2環狀體中之內周面橫跨下端面來延伸之流道形成面的方式而形成為從該載置台之周緣部延伸，並在與該第2環狀體之間形成用以捕集該間隙所溢漏出之該成膜氣體而使其成膜在該流道形成面及該第2環狀體的彎曲流道。
根據本揭露，便可在將成膜氣體供給至載置部所載置之基板以進行成膜時，抑制成膜氣體繞入至載置部之下方，而附著於載置部之情事。
參照圖1之縱剖側視圖就本揭露之成膜裝置一實施形態來加以說明。此成膜裝置係具備扁平的圓形處理容器11。該處理容器11會成為於內部形成有真空氛圍之處理室，並儲存有例如直徑為300mm的圓形基板之晶圓W。成膜裝置會對此晶圓W交互地反覆供給為原料氣體之TiCl4 (四氯化鈦)氣體與為反應氣體之NH3 (氨)氣來進行ALD，以成膜出TiN(氮化鈦)。在進行TiCl4 氣體之供給的時間帶與進行NH3 氣體之供給的時間帶之間係供給有為非活性氣體之N2 (氮)氣體來作為沖淨氣體，以將處理容器11內之氛圍從TiCl4 氣體氛圍或是NH3 氣體氛圍置換為N2 氣體氛圍。又，在ALD的成膜處理中，係將N2 氣體連續供給至處理容器11內來作為用以將TiCl4 氣體及NH3 氣體導入至處理容器11內的載體氣體。又，在將複數片晶圓W進行成膜處理後，便將清潔氣體(ClF3 氣體)供給至處理容器11內，來進行用以去除附著於處理容器11內各部之TiN膜的清潔。
上述處理容器11側壁係設置有晶圓W之搬出入口12以及開閉此搬出入口12之閘閥13。在較搬出入口12要靠上部側係設置有會成為處理容器11之一部分，且構成為將會縱剖面形狀為方型之導管彎曲為圓環狀之排氣導管14。此圓環排氣導管14係在內側下方之角部會被切凹，並藉由此切凹部來使該排氣導管14內外連通。關於排氣導管14係將此切凹部的上方縱壁作為14A，將切凹部外側之底壁作為14B來加以顯示。
排氣導管14之底壁14B內周端係連接有為第1環狀體，且形成為寬度較寬的水平鋁製圓環板31之外周端，該圓環板31會被排氣導管14所支撐。關於圓環板31之構成，係參照為成膜裝置一部分的橫剖平面圖之圖2、為下述圓筒構件34及引導構件35的立體分解圖之圖3、為圓環板31、圓筒構件34以及引導構件35的縱剖面圖之圖4來加以說明。此圓環板31外周緣部會朝垂直上方突出而形成扁平圓環突起部32。該圓環突起部32上端會透過間隙來與上述排氣導管14之垂直壁14A下端對向。該間隙係構成為用以將處理容器11內排氣之排氣口14C，並藉由下述排氣機構17將排氣導管14內排氣，來從排氣口14將處理容器11內排氣。又，圓環板31之內周緣部會朝垂直下方突出而形成為第2環狀體之圓環突起部33。
回到圖1，上述排氣導管14係透過排氣管16來連接於由壓力調整用閥及真空泵所構成的排氣機構17。基於從下述控制部10所輸出之控制訊號，來調整該壓力調整用閥之開啟程度，以使處理容器11內之壓力成為所欲真空壓力。
俯視觀察下，會以圍繞於上述圓環板31之方式來設置有圓形水平的載置台21。為載置部之該載置台21係埋設有加熱器22。此加熱器22會將晶圓W加熱至例如400℃~700℃。載置台21之下面側中央部係連接有會貫穿處理容器11底部，而延伸於上下方向的支撐構件23之上端，此支撐構件23之下端則會連接於升降機構24。載置台21會藉由此升降機構24來在圖1中以鏈線所示的下方位置與圖1中以實線所示的上方位置之間進行升降。下方位置係用以在與從搬出入口12進入至處理容器11內的晶圓W之搬送機構之間進行該晶圓W之收授的位置，在位於此下方位置時，載置台21上面便會位在較圓環突起部33下端要靠下方。上方位置係用以對晶圓W進行處理之位置，在位於此上方位置時，載置台21便會被圓環突起部33所圍繞。
圖1中之25係在支撐構件23中設置於處理容器11底部下方的凸緣部。圖1中之26係自由伸縮的波紋管，上端及下端會分別連接於處理容器11底部及凸緣部25，以確保處理容器11內之氣密性。圖1中之27係3根(圖中僅顯示2根)支撐銷，圖1中之28係讓支撐銷27升降的升降機構。在載置台21位在下方位置時，支撐銷27便會透過載置台21所設置之貫穿孔29來升降，以在載置台21上面出沒，來在載置台21與上述搬送機構之間進行晶圓W之收授。
處理容器11底部係開口出沖淨氣體供給口41以及清潔氣體供給口42。從此沖淨氣體供給口41所噴出之沖淨氣體(N2 氣體)係防止成膜氣體朝載置台21下部進入用的氣體。沖淨氣體供給口41及清潔氣體供給口42係分別透過氣體供給管43、44來連接有沖淨氣體供給源、清潔氣體(ClF3 氣體)供給源。另外，圖1中之符號43A、44A係流量調整部，V43、V44係閥。
上述排氣導管14之上側係以從上側阻塞處理容器11的方式來設置有頂板部3。頂板部3係形成有：2個分別形成於垂直方向的氣體導入路徑51、52；將此氣體導入路徑51、52之下端連接於其上側的扁平空間53；以及，從扁平空間53的下部之彼此不同位置來朝向斜下方延伸的複數氣體流道54。頂板部3之下側中央部會成為突出至下方之突出部5，並在此突出部5形成有上述扁平空間53及氣體流道54。突出部5下面之中央區域係形成為會對向於載置台21表面的水平對向面。對向面之周緣部會進一步地突出至下方而成為圓環突起部5A，並在此圓環突起部5A以沿著其周緣並對向於載置台21之方式來設置有圓形噴淋板50。將噴淋板50、圓環突起部5A以及對向面所圍繞的空間作為擴散空間58。突出部5及噴淋板50係相當於成膜氣體供給部。
上述對向面係設置有分別形成為扁平圓形的複數氣體分散部55。氣體分散部55在例如俯視觀察時會沿著以載置台21中心為中心的同心圓來加以配置。上述氣體流道54下端會分別連接於此氣體分散部55上部所設置的未圖示之氣體導入口。氣體分散部55側周面係在周圍方向隔有間隔地來開口出複數氣體噴出孔56，從氣體流道54導入至氣體分散部55的氣體會從此氣體噴出孔56來噴出，而橫向擴散於擴散空間58。此般擴散後之氣體會從噴淋板50所設置之氣體噴出孔57來朝載置台21噴出。又，噴淋板50下面側係沿著周緣部來形成有圓環突起部50A。
又，如圖1~4所示，載置台21周圍係以圍繞載置台21之方式來設置有為第1構件的圓筒構件34。圓筒構件34係藉由例如氧化鋁而構成為較載置台21之厚度要長的圓筒狀，並具備有相當於內側環狀體之圓筒部34A。圓筒部34A係具備在讓載置台21位在上方位置時會從圓環板31之圓環突起部33內周面來橫跨下端面延伸的流道形成面，圓筒部34A下端會朝外周側彎曲而形成有會支撐下述引導構件35之支撐部34B。又，圓筒構件34上端係形成有會伸出至內周側的水平部34C，圓筒構件34會藉由水平部34C來被固定於載置台21的上面部周緣。此時，水平部34C上面會配置為與噴淋板50下面之圓環突起部50A對向，而在載置台21位在上方位置時，於圓環突起部50A與水平部34C上面之間會形成極小的間隙。
然後，在載置台21移動至上方位置時，便會形成以載置台21上面、噴淋板50下面、圓環突起部50A、水平部34C所圍繞之晶圓W的處理空間300。進一步地，如上述般在透過噴淋板50來將氣體供給至晶圓W時，所供給之氣體便會在處理空間300擴散，而透過圓環突起部50A、水平部34C之間來被排氣至圓環板31之上方，再透過排氣導管14來被排氣。圓筒構件34外周面係相當於第1周面。
又，會以圍繞圓筒構件34周圍之方式來設置有為第2構件之略圓筒形狀的引導構件35。引導構件35係以例如氧化鋁所構成，並具備相當於會在內周面具備第2周面並上下延伸的上側環狀體之筒狀部分35A，從筒狀部分35A下端朝向內側來伸出相當於下側環狀體之水平部分35B，水平部分35B會被配置固定在圓筒構件34之彎曲部34B上面。在載置台21升降時，圓筒構件34及引導構件35會與載置台21一體升降。圓筒構件34與引導構件35係相當於第3環狀體。
然後，如圖4所示，在載置台21上升至上方位置時，圓環板31內緣側之圓環突起部33會被插入至圓筒部34A外周面與引導構件35之筒狀部分35A內周面之間。此時，便如圖2、4所示，在圓筒部34A外周面與圓環突起部33內周面之間係形成有極窄之環狀間隙30A，且在圓環突起部33外周面與引導構件35之圓筒部分35A內周面之間亦會形成有極窄之環狀間隙30C。又，圓環突起部33下端面與引導構件35之水平部分35B上面亦會形成有極窄之環狀間隙30B。
該等間隙30A~30C之寬度係設定為在讓載置台21之溫度從室溫上升至700℃，而讓圓筒構件34、圓環板31及引導構件35產生熱膨脹/熱收縮時不會互相干擾的寬度。 根據此般構成，在載置台21位於上方位置，而將氣體供給至載置台21上面側時，便會如圖4所示，形成有使進入至間隙30A之氣體會在間隙30A朝向下方，在間隙30B朝向外周方向，在間隙30C朝向上方的順序來流通之彎曲流道30。從而，進入至間隙30A的氣體便會在彎曲流道30被引導，而流向引導構件35外側、圓環板31下方。又，如圖1所示，在載置台21下降至下方位置時，便會構成為會在圓筒構件34下端與引導構件35下面以及處理容器11底面之間形成有間隙。
如圖1所示，上述頂板部3所形成之氣體導入路徑51、52上游端係分別連接有配管71、81的下游端。配管71上游端會依序透過氣體儲存槽72A、流量調整部73A來連接於為處理氣體之TiCl4 氣體的供給源74A。流量調整部73A係藉由質流控制部所構成，並會就從氣體供給源74A所供給之TiCl4 氣體來調整被供給至下游側之流量。另外，關於下述其他各流量調整部73B~73F亦會構成為與此流量調整部73A相同，並會調整朝配管下游側所供給的氣體之流量。
為氣體儲存部之氣體儲存槽72A會將從氣體供給源74A所供給之TiCl4 氣體在供給至處理容器11內前暫時儲存。如此般，在儲存TiCl4 氣體而使氣體儲存槽72A內升壓至既定壓力後，便從氣體儲存槽72A來將TiCl4 氣體朝氣體導入路徑51供給。從此氣體儲存槽72A來將TiCl4 氣體朝氣體導入路徑51之供給會藉由上述閥V1來加以進行。如此般，藉由將TiCl4 氣體朝氣體儲存槽72A暫時儲存，便可以較高流量來將該TiCl4 氣體供給至處理容器11。另外，關於下述為氣體儲存部之各氣體儲存槽72B、72D、72E亦與氣體儲存槽72A同樣地會將從配管上游側之氣體供給源所供給的各氣體暫時儲存。然後，藉由各氣體儲存槽72B、72D、72E下游側所設置的閥V2、V4、V5的開閉來分別進行氣體從各氣體儲存槽72B、72D、72E朝氣體導入路徑51、52的供給。
在上述配管71中，閥V1下游側係連接有配管75下游端。配管75上游端會依序透過閥V2、氣體儲存槽72B、流量調整部73B來連接於N2 氣體供給配管74B。進一步地，在配管75中，閥V2下游側係連接有配管76下游端。配管76上游端會依序透過閥V3、流量調整部73C來連接於N2 氣體供給配管74C。 又，在配管76中，閥V3下游側係連接有配管77下游端。配管77上游端會依序透過閥V7、流量調整部73G來分歧為2支，並在各端部分別連接有清潔氣體(ClF3 )供給源74G及N2 氣體供給源74I。另外，清潔氣體供給源74G及N2 氣體供給源74I係可分別獨立並構成為可開啟、關閉氣體之供給，且會構成為可僅供給清潔氣體，僅供給N2 氣體，或是供給清潔氣體及N2 氣體的三種類型。
接著，便就配管81來加以說明。配管81上游端係依序透過閥V4、氣體儲存槽72D、流量調整部73D，來連接於NH3 氣體供給源74D。配管81之閥V4下游側係連接有配管82下游端。配管82上游端係依序透過閥V5、氣體儲存槽72E、流量調整部73E，來連接於N2 氣體供給源74E。進一步地，配管82之閥V5下游側係連接有配管83下游端。配管83上游端係依序透過閥V6、流量調整部73F，來連接於N2 氣體供給源74F。 又，配管83之閥V6下游側係連接有配管84下游端。配管84上游端係依序透過閥V8、流量調整部73H而分歧為2支，且各端部會分別連接有清潔氣體供給源74H、N2 氣體供給源74J。另外，清潔氣體供給源74H及N2 氣體供給源74J係分別獨立並構成為可開啟、關閉氣體之供給，且會構成為可僅供給清潔氣體，僅供給N2 氣體，或是供給清潔氣體及N2 氣體的三種類型。
另外，從上述N2 氣體供給源74B、74E所供給之N2 氣體係為了進行上述沖淨而被供給至處理容器11內。分別從N2 氣體供給源74C、74F所供給之N2 氣體係相對於TiCl4 氣體、NH3 氣體的載體氣體，由於此載體氣體係如上述般，會在晶圓W處理中連續被供給至處理容器11內，故在進行沖淨時亦會被供給至處理容器11內。從而，在將該載體氣體供給至處理容器11內的時間帶會重疊於為了進行沖淨而將來自氣體供給源74B、74E的N2 氣體供給至處理容器11內的時間帶，載體氣體亦會被用於沖淨。本說明書中為了簡化說明，便將從N2 氣體供給源74B、74E所供給的氣體作為沖淨氣體來加以記載，將從N2 氣體供給源74C、74F所供給的氣體作為載體氣體來加以記載。
成膜裝置係具備控制部10。此控制部10係由電腦所構成，並具備程式、記憶體、CPU。程式係以可實施成膜裝置之下述一連串動作的方式來設置有步驟群，控制部10會藉由該程式來將控制訊號輸出至成膜裝置之各部，以控制該各部之動作。具體而言，各閥V1~V8、V43、V44的開閉、流量調整部73A~73H、43A、44A的氣體流量之調整、壓力調整機構18之處理容器11內的壓力調整、加熱器22之晶圓W溫度的調整等之各動作會藉由控制訊號來加以控制。上述程式會被儲存在例如光碟、硬碟、DVD等的記憶媒體，而被安裝於控制部10。
接著，關於成膜裝置中之成膜處理係參照就各閥之開閉狀態及各配管之氣體流通狀態來顯示之圖5~圖7加以說明。圖5~圖7以及說明下述清潔處理之圖9、圖10係藉由對關閉之閥V附加斜線，來與開啟之閥V區別而加以顯示。又，關於配管71、75~77、81~84，係將氣體會流通於下游側之部位顯示為會較未流通之部位要粗。
首先，在關閉閥V1~V8的狀態下，藉由搬送機構來將晶圓W搬送至處理容器11內，而載置於位在收授位置的載置台21。在搬送機構從處理容器11內退離後，便關閉閘閥13。藉由載置台21之加熱器21來將晶圓W加熱至上述溫度(例如450℃)並使載置台21朝上方位置上升，來形成有處理空間300。又，開啟處理容器11底部側的氣體供給管43所設置之閥V43，來從沖淨氣體供給口41以3.0L/分鐘~20L/分鐘的流量(例如4.0L/分鐘)來將沖淨氣體供給至處理容器11內，並藉由介設於排氣管16的排氣機構17，來將處理容器11內調整為既定真空壓力。
然後，開啟閥V3、V6，而從N2 氣體供給源74C、74F來分別將載體氣體(N2 氣體)供給至氣體導入路徑51、52。另一方面，會從氣體供給源74A、74D來將TiCl4 氣體、NH3 氣體供給至配管71、81。藉由關閉閥V1、V4，來將該等TiCl4 氣體、NH3 氣體分別儲存於氣體儲存槽72A、72D，而使該氣體儲存槽72A、72D內升壓。然後，如圖5所示般，開啟閥V1，而使被儲存於氣體儲存槽72A的TiCl4 氣體透過噴淋板50來被供給至處理容間300，而被供給至晶圓W。
在進行TiCl4 氣體朝此處理容器11內之晶圓W的供給的同時，一併從氣體供給源74B、74E來分別將沖淨氣體(N2 氣體)供給至配管75、82。藉由關閉閥V2、V5，來將沖淨氣體儲存於氣體儲存槽72B、72E，而使該氣體儲存槽72B、72E內升壓。
之後，如圖6所示，關閉閥V1並開啟閥V2、V5。藉此，來停止TiCl4 氣體朝處理容器11內之供給，並將分別儲存於氣體儲存槽72B、72E的沖淨氣體供給至氣體導入路徑51、52，而與TiCl4 氣體同樣地擴散在擴散空間58，並從噴淋板50噴出至處理空間300，在處理容空間300橫向擴散，以朝排氣導管14進行沖淨。其結果，便可從處理容器11內來去除殘留在處理空間300的TiCl4 氣體。
接著，如圖7所示，關閉閥V2、V5並開啟閥V4。藉此，來停止沖淨氣體朝氣體導入路徑51、52的供給，並將儲存於氣體儲存槽72D的NH3 氣體朝氣體導入路徑52供給，而從噴淋板50來噴出至處理空間300。關於此NH3 氣體亦與沖淨氣體同樣地從噴淋板50來被供給至處理空間300，以將NH3 氣體高均勻性地供給至晶圓W面內各部。結果，便可在晶圓W面內進行被高均勻性地吸附之TiCl4 氣體的氮化反應，而形成有作為反應生成物之TiN薄層。另一方面，藉由關閉閥V2、V5，來將從氣體供給源74B、74E來分別供給至配管75、82的沖淨氣體儲存於氣體儲存槽72B、72E，而使該氣體儲存槽72B、72E內升壓。
然後，關閉閥V4並開啟閥V2、V5，來停止NH3 氣體朝處理容器11內的供給，並將分別儲存於氣體儲存槽72B、72E的沖淨氣體朝氣體導入路徑51、52供給，而與圖6同樣地從噴淋板50來噴出至處理空間300。其結果，便可藉由從晶圓W面內各部上方同時或略同時地去除殘留在處理空間300的未反應NH3 氣體以停止氮化反應，來使晶圓W面內各部中之TiN薄層的厚度成為一致。NH3 氣體會朝排氣導管14被沖淨，而從處理容器11內被去除。如此般來進行沖淨後，藉由關閉閥V4，來將從氣體供給源74D供給至配管81之NH3 氣體儲存於氣體儲存槽72D，而使該氣體儲存槽72D內升壓。
如此般，在將對晶圓W依序供給TiCl4 氣體、沖淨氣體、NH3 氣體、沖淨氣體的循環作為1個循環時，會反覆進行此循環，來在晶圓W沉積出TiN薄層，而成膜出TiN膜。然後，在實行既定次數之循環時，便會以與朝處理容器11內搬入時相反的順序來將晶圓W從處理容器11搬出。
如上述，雖是對晶圓W供給氣體來進行成膜處理，但在以往的成膜裝置中，會有例如TiCl4 氣體等的成膜氣體進入到圓環板31之圓環突起部33與載置台21之間的間隙，而流進至載置台21下方側，使反應生成物附著在載置台21下面之情事。然後，便會使載置台21中，附著有反應生成物之處的熱輻射率改變，而在加熱晶圓W後，讓晶圓W之加熱溫度的面內均勻性變差，而有使晶圓W膜厚的面內均勻性變差之情事。於是，藉由從成膜裝置中之載置台21下方側的沖淨氣體供給口41供給沖淨氣體，便會抑制成膜氣體繞入至載置台21下方側。
然而，近年來使用有一種將儲存在氣體儲存槽72A、B、D、E的氣體一口氣供給至狹窄的處理空間300來提高生產性之方法。在此般方法的情況下，便會使載置台21上方側的氣體壓力容易升高，而讓欲從處理容器300流進排氣導管14的成膜氣體容易進入至載置台21與圓環板31之間。 此時雖藉由提高載置台21下方側的沖淨氣體流量，便可抑制成膜氣體朝載置台21下方側的流入，但在處理空間300側之氣體流量較少時，沖淨氣體便會容易流入至處理空間300側。然後，在讓沖淨氣體流入至處理空間300側時，便會因沖淨氣體而使成膜氣體之氣流紊亂，或將沖淨氣體吹送至晶圓W，而有讓膜厚之均勻性惡化或膜質惡化之虞。
本實施形態中，係在載置台21周圍所設置的圓筒構件34外周側設置引導構件35。藉此，來形成彎曲流道30，該彎曲流道30係在載置台21位在上方位置時，會連接圓筒構件34外周面與圓環板31之圓環突起部33內周面之間的間隙30A、引導構件35之水平部35B上面與圓環突起部33下端面之間的間隙30C以及引導構件35之垂直部內周面與圓環突起部33外周面之間的間隙30B。因此，便如圖8所示，進入至載置台21與圓環板31之間的氣體便會以流通於該彎曲流道30之方式來被引導，而被放出至圓環板31下方側。
如此般，藉由在載置台21與圓環板31之間隙構成彎曲流道30，以使流道長度加長，便可如下述實施例所示般，加大穿出載置台21下方側的氣體之匹列數(Peclet number)，而可使成膜氣體難以從載置台21上方流入至下方側空間。
如此般，在從處理空間300所排氣出之氣體進入至彎曲流道30時，會在流通於彎曲流道30的期間，使在氣體中容易生成反應生成物301的成膜氣體(例如TiCl4 )會附著於圓環突起部33、圓筒構件34及引導構件35而被去除。在從處理空間300側流通於彎曲流道30，而被放出至圓環板31下方側的氣體中，係可藉由構成彎曲流道30而加長流道長度，來使成膜氣體難以流進至圓環板31下方側，並將氣體中之成膜氣體捕集以使含量減少。從而，便可抑制成膜氣體朝載置台21下面的附著。
進一步地，在反覆晶圓W之成膜處理時，便會使起因於成膜氣體之反應生成物累積在處理容器11內壁或圓筒構件34、引導構件35及圓環板31表面而成為顆粒的來源。在此，便依既定時間或依處理後之晶圓W的既定片數來實行處理容器11內之清潔。 就清潔處理來加以說明。在例如從處理容器11來將處理完成之晶圓W搬出後，讓未載置晶圓W之狀態的載置台21位在上方位置。進一步地，使閥V1~V6成為關閉狀態，而將處理容器11內真空排氣，以調整處理容器11內之壓力。
接著，如圖9所示，便調整處理容器11內之壓力並藉由加熱器22來將載置台調整至清潔處理時之溫度(例如160~250℃)。進一步地開啟閥V7，而將清潔氣體供給至氣體導入路徑51。此時，在氣體導入路徑52側便會開啟閥V8，而將沖淨氣體供給至氣體導入路徑52。藉此，來從噴淋板50將氮氣與清潔氣體供給至處理空間300。又，同樣地在載置台21位在上方位置的狀態下，將氮氣供給至氣體導入路徑51，並將清潔氣體供給至氣體導入路徑52(圖示省略)。如此般，藉由依序將清潔氣體分別供給至氣體導入路徑51、52，便可去除附著於氣體導入路徑51、52內的反應生成物301。此時，清潔氣體便會從處理空間300通過圓環板31上方，而被排氣到排氣導管14。
進一步地，在載置台21位在上方位置的狀態下，關閉閥43，並開啟閥44。藉此，來從處理容器11底面側的氣體供給口44，將清潔氣體供給至載置台21下方側之空間(圖示省略)。藉此，來使清潔氣體充滿載置台21下方側之空間，而去除附著於載置台21下方側的反應生成物301。 接著，便停止清潔氣體之供給，而讓載置台21下降至下方位置。藉此，來讓充滿於載置台21下方側之空間的清潔氣體從載置台21與圓環板31之間的間隙來繞入至載置台21上方，而透過排氣導管14被排氣。
進一步地，在載置台21位在下方位置的狀態下，分別從氣體導入路徑52及處理容器11底面側之氣體供給口44來依序供給清潔氣體。圖10係顯示從處理容器11底面側之氣體供給口44來供給清潔氣體之範例。如此般，在各載置台21位在上方位置的狀態及位在下方位置的狀態下，會依序從氣體導入路徑51、氣體導入路徑52及處理容器11底面側之氣體供給口44來供給清潔氣體。藉此，來去除附著於處理容器11內部的反應生成物301，而透過排氣導管14來被排氣。又，如圖8所說明般，在圓環突起部33、圓筒構件34及引導構件35中會因為在晶圓W成膜處理時從處理空間300側流通於彎曲流道30之成膜氣體，而使反應生成物附著。此時，便會如圖10所示，在讓載置台21下降至下方位置的狀態下，藉由將氣體供給至處理容器11內，來讓被供給至處理容器11內之清潔氣體通過圓環板31之圓環突起部33的內外周面、引導構件35之內周面以及圓筒構件34之外周面。藉此，便會如圖11所示，來去除附著於圓環板31、引導構件35以及圓筒構件34的反應生成物301。
根據上述實施形態，便會在從與載置台21對向之噴淋板50來將成膜氣體供給至處理容器11內之載置台21所載置的晶圓W以進行成膜的成膜裝置中，透過間隙並以圍繞載置台21周圍之方式來設置圓環板31，並在圓環板31內周緣設置會朝下方延伸之圓環突起部33。又，會從載置台21之周緣設置包含有具備會從圓環突起部33之內周面橫跨下端面來延伸的流道形成面之圓筒部34A的圓筒構件34。進一步地設置會從圓筒構件34下端水平延伸，而沿著圓環突起部33外周面朝上方延伸的引導構件35，且在圓筒構件34與引導構件35以及圓環突起部33之間形成彎曲流道30。如此般，藉由將從載置台21上方側穿過下方側的流道作為彎曲流道30，而加長流道長度，便可減少穿過彎曲流道30而流出於圓環板31及載置台21下方的氣體之擴散。
又，即便成膜氣體進入至載置台21與圓環突起部33之間的間隙，仍可在流道形成面、引導構件35內周面及圓環突起部捕集成膜氣體。從而，便可減少穿過彎曲流道30而流出於圓環板31及載置台21下方之氣體中的成膜氣體。其結果，由於可抑制載置台21下方之氣體的擴散並減少成膜氣體之含量，故可降低在載置台21下面之成膜氣體的附著。
進一步地，在將圓筒構件34與引導構件35構成為一體的情況，會有在載置台21溫度變高時，因熱膨脹等而使引導構件35部分相關的應力變大而產生破損之虞。因此，藉由將圓筒構件34與引導構件35互相個別成形，便可抑制破損。又，相較於將圓筒構件34與引導構件35構成為一體的情況，可抑制製作成本。此時，從抑制在圓筒構件34與引導構件35之接合部分相關的應力之觀點看來，圓筒構件34與引導構件35較佳地係以彼此相同之材質(例如陶瓷)來加以構成。
又，在圓筒構件34之下端部分中，於較載置台21要突出於下方之部分變長時，載置台21下方便會藉由圓筒構件34下端部分來被加以區劃，而有使從底面側之沖淨氣體供給口41、清潔氣體供給口42所供給之沖淨氣體及清潔氣體會難以通過處理容器11中之情事。進一步地，會有使載置台21下方側之氣流被阻礙等的問題。根據上述實施形態，使圓筒構件34及引導構件35彎曲，而將藉由引導構件35及圓環板31所構成的流道作為會上下彎曲的彎曲流道30。從而，便可抑制較圓筒構件34之載置台21要突出於下方的部分變長，並使流道長度加長。又，在較圓筒構件34之載置台21要突出於下方的部分變長時，為了不阻礙載置台21下方側的氣流，便需要使載置台21下方側之空間加寬。然後，在載置台21下方側的空間變寬時，為了維持真空壓力，便需要大排氣量，或是加大沖淨氣體及清潔氣體的供給量。由於如本實施形態，藉由圓筒構件34、引導構件35以及圓環板31來構成彎曲流道，便可將圓筒構件34下端部分控制為較短，故即便不將載置台21下方側空間加寬，仍可不阻礙載置台21下方側之氣流。
又，由於即便增加成膜氣體之流量以提升生產性，仍可降低成膜氣體朝載置台21下方側之擴散，故無需加大供給至載置台21下方側之沖淨氣體的流量，而可為例如3.0L/分鐘~20L/分鐘左右的流量。如此般，由於可將供給至載置台21下方側之沖淨氣體的流量抑制為較小，故可抑制沖淨氣體朝處理空間300側的流入以發揮穩定成膜性。
又，在載置台21上升至上方位置時，較佳地係更確實地避開圓環突起部33以及圓筒構件34與引導構件35的干擾。因此，在將載置台21加熱至晶圓W之成膜溫度(例如450℃)的狀態下，從縱剖面圖來觀察較佳地係使圓筒構件34外周面與圓環突起部33之內周面的間隙30A之寬度d1、圓環突起部33外周面與引導構件35內周面的間隙30C之寬度d2為1.0mm到5.0mm，更佳地係相同寬度。另外，關於引導構件35之水平部分35B上面與圓環突起部33下端面的間隙30B亦可為與間隙30A、30C相同寬度。 又，間隙30A~C較佳地係設定為在室溫(25℃)到700℃的範圍來讓載置台21溫度改變時，不會使圓環突起部33以及圓筒構件34與引導構件35互相接觸。
彎曲流道30並不限於上述實施形態所示的構成。例如圖12所示，亦可以從引導構件35之圓筒部分35A上端朝外周方向並沿著圓環板31下面延伸之方式來設置水平部分35C。 又，亦可如圖13所示，設置有從圓環板31下面突出至下方，並沿著引導構件35外周面來延伸之環狀壁部303。藉由此般構成，便可使彎曲流道30之流道長度進一步地加長，而可進一步地加大在流通於彎曲流道30時的成膜氣體與圓環板31、引導構件35、圓筒構件34的接觸面積。進一步地，藉由使流道長度變長，由於可推測出穿過彎曲流道30之氣體的匹列數會變得更大，故具有能夠更加抑制成膜氣體朝載置台21下方側的擴散之效果。
進一步地，如圖14所示，亦可將圓環板31之圓環突起部33構成為更厚，並構成為從圓筒構件34下端來將彎曲部34沿著圓環突起部33下端部之端面水平延伸，以確保彎曲流道30之長度。 在此般構成中，由於可藉由加長彎曲部34D上面與圓環突起部33下端面之間的距離，來加長彎曲流道30之長度，故可得到相同效果。
如上述探討般，本次所揭露之實施形態在所有點上都應只為例示而非為限制。上述實施形態係可不超出添附之申請專利範圍及其主旨來以各種形態進行省略、置換、變更。
[實施例] 為了驗證本揭露相關之成膜裝置的效果，便進行下述試驗。作為成膜裝置之實施例係使用圖1所示之成膜裝置。又，作為比較例係使用除了不設置引導構件35、不在圓筒構件34形成支撐部34B、不將間隙的流道作為彎曲流道，而是作為較彎曲流道30要短的直線狀流道之部分之外，都構成為與實施例相同之成膜裝置。關於各實施例及比較例係對1000片晶圓依序進行依照實施形態所示之方法的成膜處理，而測量成膜在處理後之各晶圓W的膜之膜厚分布，再依各晶圓W來測量所成膜出之膜的膜厚之最薄部位與最厚部位的差距(變幅)與平均膜厚。
圖15、圖16係使用各實施例及比較例相關之成膜裝置，而針對從第1片晶圓W進行成膜處理到第1000片晶圓W為止時之晶圓W的處理片數，來顯示成膜在該第N片的晶圓W之膜的平均膜厚(Å)以及成膜在晶圓W的膜厚之最大值與最小值之間的變幅(Å)之特性圖。 如圖15、16所示，得知在比較例中，隨著晶圓W之處理片數增加會讓成膜在晶圓W之膜的平均膜厚大幅地減少，而在實施例中相較於比較例，在晶圓W處理片數增加時，成膜在晶圓W之膜的平均厚度之減少則會較小。從而，便可說是在晶圓W面間之膜厚的誤差會較小。這推測是雖會因為附著於載置台21下方之成膜氣體的反應生成物會逐漸累積而使晶圓W之平均膜厚逐漸變薄，但因為在實施例中，成膜氣體朝載置台21下方側之流出會被抑制，故可抑制載置台21下方側中之成膜氣體的反應生成物之附著。
又，在計算出各實施例及比較例的成膜裝置中，從載置台21與圓環板31之間隙流進至載置台21下方側的氣體(在流道下端測量)的匹列數，而計算出為了防止從匹列數所計算出之氣體的逆擴散防止所需的從載置台21下方側來供給之沖淨氣體的流量時，相對於比較例中為6.6L，實施例中為4L左右。根據此結果，實施例可是說相較於比較例會讓氣體較難以擴散至載置台21下方側，而可減少從載置台21下方側所供給之沖淨氣體的流量。這推測是因為會藉由結合圓筒構件34與引導構件35來構成彎曲流道30會使流道長度變長之故。
11:處理容器 14:排氣導管 21:載置台 50:噴淋板 31:圓環板 34:圓筒構件 35:引導構件 W:晶圓
圖1係一實施形態相關的成膜裝置之縱剖側視圖。 圖2係成膜裝置的部分橫剖平面圖。 圖3係成膜裝置所設置之圓環板、圓筒構件及引導構件的立體分解圖。 圖4係顯示彎曲流道之縱剖面圖。 圖5係顯示成膜裝置之作用的說明圖。 圖6係顯示成膜裝置之作用的說明圖。 圖7係顯示成膜裝置之作用的說明圖。 圖8係說明彎曲流道中之成膜氣體的捕集部之說明圖。 圖9係顯示成膜裝置之清潔部的說明圖。 圖10係顯示成膜裝置之清潔部的說明圖。 圖11係說明去除附著於彎曲流道之反應生成物的說明圖。 圖12係說明彎曲流道之另一範例的說明圖。 圖13係說明彎曲流道之又一範例的說明圖。 圖14係說明彎曲流道之再一範例的說明圖。 圖15係顯示實施例之膜厚相對於晶圓處理片數的特性圖。 圖16係顯示比較例之膜厚相對於晶圓處理片數的特性圖。
無
14C:排氣口
21:載置台
30:彎曲流道
30A、30B:間隙
31:圓環板
32:圓環突起部
33:圓環突起部
34:圓筒構件
34A:圓筒部
34B:支撐部
34C:水平部
35:引導構件
35A:筒狀部分
35B:水平部分
50:噴淋板
d1:寬度
d2:寬度
W:晶圓

Claims (8)

  1. 一種成膜裝置，係具備： 真空容器，係形成真空氛圍之處理室； 載置部，係將基板載置於上側，藉由支撐部來讓下側之中心部被該處理室所支撐並使下側之周緣部從該真空容器之底部分離設置； 成膜氣體供給部，係對向該載置部而設置於該載置部上方，並將成膜氣體供給至該基板以進行成膜； 排氣口，係在該真空容器之側壁沿著該載置台之外周來加以開口； 第1環狀體，係從該真空容器之側壁的該排氣口之下方朝向該載置台突出，內周緣部會夾置著間隙來對向於該載置台之側周，而將該處理室上下區分； 第2環狀體，係以使下端部位在較該載置台之周緣部要靠下方的方式，來形成為從該第1環狀體之內周緣部來延伸至下方；以及 第3環狀體，係以具備從該第2環狀體中之內周面橫跨下端面來延伸之流道形成面的方式而形成為從該載置台之周緣部延伸，並在與該第2環狀體之間形成用以捕集該間隙所溢漏出之該成膜氣體而使其成膜在該流道形成面及該第2環狀體的彎曲流道。
  2. 如申請專利範圍第1項之成膜裝置，其中該流道形成面係從該第2環狀體之內周面透過下端面來橫跨外周面而延伸； 該彎曲流道係折返於上下方向的流道。
  3. 如申請專利範圍第2項之成膜裝置，其中該第3環狀體係藉由第1構件與第2構件所構成； 該第1構件係具備會形成該流道形成面之一部分並沿著該第2環狀體之內周面的第1周面，而被該載置部所支撐； 該第2構件係具備會形成該流道形成面之一部分並沿著該第2環狀體之外周面的第2周面，而被該第1構件所支撐； 該第1構件與該第2構件會個別成形。
  4. 如申請專利範圍第3項之成膜裝置，其中該第2構件係具備： 上側環狀體，係圍繞該第2環狀體之外周面，其內周面會形成該第2周面；以及 下側環狀體，係從該內周面朝向該上側環狀體之中心側延伸，其上面會對向於該第2環狀體之下端面； 該第1構件係具備： 內側環狀體，係其外周面會形成該第1周面；以及 支撐部，係從該外周面來朝向該內側環狀體之外側延伸，而從下方來支撐該下側環狀體。
  5. 如申請專利範圍第2至4項中任一項之成膜裝置，其中該第1構件、該第2構件係分別藉由陶瓷所構成。
  6. 如申請專利範圍第1至4項中任一項之成膜裝置，其中該彎曲流道係形成為具備在縱剖面觀察下之寬度為1.0mm~5.0mm的部位。
  7. 如申請專利範圍第1至6項中任一項之成膜裝置，其中該成膜氣體供給部係交互反覆供給為成膜氣體之原料氣體與會與該原料氣體反應而生成反應生成物的反應氣體，並會在供給原料氣體之期間與供給反應氣體之期間之間的期間供給沖淨氣體； 該真空容器之底部係設置有用以供給會抑制該成膜氣體附著於該載置部之下面的沖淨氣體之沖淨氣體供給口； 在從該成膜氣體供給部分別噴出原料氣體、反應氣體、沖淨氣體的期間，會以3.0L/分鐘~20L/分鐘來從該沖淨氣體供給口供給沖淨氣體。
  8. 一種成膜方法，係使用會將成膜氣體供給至基板之成膜裝置的成膜方法，具備： 在真空容器之處理室形成真空氛圍的工序； 將基板載置於載置部之上側的工序，該載置部係下側之中心部會藉由支撐部來被該處理室所支撐並使下側之周緣部從該真空容器之底部分離設置； 從對向於該載置部而設置在該載置部之上方的成膜氣體供給部，將成膜氣體供給至該基板以進行成膜的工序；以及 從在該真空容器之側壁而沿著該載置台之外周來開口的排氣口來進行排氣之工序； 該成膜裝置係具備： 第1環狀體，係從該真空容器之側壁的該排氣口之下方朝向該載置台突出，內周緣部會夾置著間隙來對向於該載置台之側周，而將該處理室上下區分； 第2環狀體，係以使下端部位在較該載置台之周緣部要靠下方的方式，來形成為從該第1環狀體之內周緣部來延伸至下方；以及 第3環狀體，係以具備從該第2環狀體中之內周面橫跨下端面來延伸之流道形成面的方式而形成為從該載置台之周緣部延伸； 進一步地具備：將該間隙所溢漏出之該成膜氣體捕集於形成在該第2環狀體與該第3環狀體之間的彎曲流道，以使其成膜在該流道形成面及該第2環狀體之工序。
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