JP2020026551A - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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- JP2020026551A JP2020026551A JP2018151892A JP2018151892A JP2020026551A JP 2020026551 A JP2020026551 A JP 2020026551A JP 2018151892 A JP2018151892 A JP 2018151892A JP 2018151892 A JP2018151892 A JP 2018151892A JP 2020026551 A JP2020026551 A JP 2020026551A
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- gas
- annular body
- mounting table
- film forming
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
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Abstract
Description
上側に基板が載置され、下側の中心部が支持部により前記処理室に支持されると共に下側の周縁部が前記真空容器の底部から離間して設けられる載置部と、
前記載置部の上方に当該載置部に対向して設けられ、前記基板に成膜ガスを供給して成膜する成膜ガス供給部と、
前記真空容器の側壁に、前記載置台の外周に沿って開口した排気口と、
前記真空容器の側壁の前記排気口の下方から前記載置台へ向けて突出し、内周縁部が隙間を挟んで当該載置台の側周に対向して、前記処理室を上下に区画する第1の環状体と、
下端部が前記載置台の周縁部よりも下方に位置するように、前記第1の環状体の内周縁部から下方に延伸されて形成される第2の環状体と、
前記第2の環状体における内周面から下端面に亘って沿う流路形成面を備えるように前記載置台の周縁部から延伸されて形成され、前記隙間に漏れた前記成膜ガスをトラップして前記流路形成面及び前記第2の環状体に成膜させるための屈曲流路を当該第2の環状体との間に形成する第3の環状体と、
を備えている。
このような構成によれば載置台21を上方位置に位置させ、載置台21の上面側にガスを供給したときに図4に示すように隙間30Aに進入したガスが隙間30Aを下方に、隙間30Bを外周方向に、隙間30Cを上方に向かって、この順に流れる屈曲流路30が形成される。従って隙間30Aに進入したガスは、屈曲流路30にガイドされて、ガイド部材35の外側、円環板31の下方に流れだす。また図1に示すように載置台21が下方位置に下降したときには、円筒部材34の下端及びガイド部材35の下面と、処理容器11の底面との間に隙間が形成されるように構成されている。
また配管76においてバルブV3の下流側には、配管77の下流端が接続されている。配管77の上流端は、バルブV7、流量調整部73Gをこの順に介して、2本に分岐し、各端部に夫々クリーニングガス(ClF3)供給源74G及びN2ガス供給源74Iが接続されている。なおクリーニングガス供給源74G及びN2ガス供給源74Iは、各々独立してガスの供給をオンオフできるように構成されており、配管77にクリーニングガスのみ、N2ガスのみ、クリーニングガス及びN2ガスの3通りの供給ができるように構成されている。
また配管83においてバルブV6の下流側には、配管84の下流端が接続されている。配管84の上流端は、バルブV8、流量調整部73Hをこの順に介して、2本に分岐し、各端部に夫々クリーニングガス供給源74H及びN2ガス供給源74Jが接続されている。なおクリーニングガス供給源74H及びN2ガス供給源74Jは、各々独立してガスの供給をオンオフできるように構成されており、配管84にクリーニングガスのみ、N2ガスのみ、クリーニングガス及びパージガスの3通りの供給ができるように構成されている。
この時載置台21の下方側のパージガスの流量を多くすることで、載置台21の下方側への成膜ガスの流入を抑えることができるが、処理空間300側のガスの流量が少ないときにパージガスが処理空間300側に流入しやすくなる。そして処理空間300側にパージガスが流入してしまうと、パージガスにより成膜ガスの気流が乱されたり、パージガスがウエハWに吹き付けられることにより、膜厚の均一性の悪化や、膜質の悪化が懸念される。
処理空間300側から屈曲流路30を流れ、円環板31の下方側に放出されるガスにおいては、屈曲流路30を構成し流路長を長くすることにより載置台21の下方側に成膜ガスが流れ込みにくくなると共に、ガス中の成膜ガスがトラップされて含量が少なくなる。従って載置台21の下面への成膜ガスの付着が抑制される。
クリーニング処理について説明する。例えば処理済みのウエハWを処理容器11から払い出した後、ウエハWを載置していない状態の載置台21を上方位置に位置させる。さらにバルブV1〜V6を閉じた状態とし、処理容器11内を真空排気し、処理容器11内の圧力を調整する。
次いでクリーニングガスの供給を停止して、載置台21を下方位置に下降させる。これにより載置台21の下方側の空間に満たされたクリーニングガスが、載置台21と円環板31との間の隙間から載置台21の上方に回り込み排気ダクト14を介して排気される。
また隙間30A〜Cは、載置台21を室温(25℃)から700℃の範囲で温度変化させたときに円環突起33と、円筒部材34及びガイド部材35と、が互いに接触しないように設定することが好ましい。
また図13に示すように円環板31の下面から下方に突出し、ガイド部材35の外周面に沿って伸びる環状壁部303を設けてもよい。このような構成とすることで屈曲流路30の流路長をさらに長くすることができ、屈曲流路30を流れるときの成膜ガスと、円環板31、ガイド部材35及び円筒部材34との接触面積をさらに大きくすることができる。さらに流路長が長くなることにより、屈曲流路30を抜けるガスのペクレ数がさらに大きくなると想定されることから載置台21の下方側への成膜ガスの拡散をより抑制できる効果がある。
このような構成においても屈曲部34Dの上面と円環突起33の下端面との間の距離を長くすることにより屈曲流路30の長さを長くすることができるため同様の効果を得ることができる。
図15、16に示すように比較例ではウエハWの処理枚数が増えるに従いウエハWに成膜される膜の平均膜厚が大きく減少している、実施例では、比較例に比べてウエハWの処理枚数が増えたときにも、ウエハWに成膜される膜の平均膜厚の減少が小さいことが分かる。従ってウエハWの面間における膜厚の誤差が小さいといえる。これは、載置台21の下方に付着する成膜ガスの反応生成物が徐々に蓄積されることによりウエハWの平均膜厚が徐々に薄くなるが、実施例では、載置台21の下方側への成膜ガスの流出が抑制されているため、載置台21の下方側における成膜ガスの反応生成物の付着を抑制できるためと推測される。
14 排気ダクト
21 載置台
50 シャワープレート
31 円環板
34 円筒部材
35 ガイド部材
W ウエハ
Claims (8)
- 真空雰囲気の処理室を形成する真空容器と、
上側に基板が載置され、下側の中心部が支持部により前記処理室に支持されると共に下側の周縁部が前記真空容器の底部から離間して設けられる載置部と、
前記載置部の上方に当該載置部に対向して設けられ、前記基板に成膜ガスを供給して成膜する成膜ガス供給部と、
前記真空容器の側壁に、前記載置台の外周に沿って開口した排気口と、
前記真空容器の側壁の前記排気口の下方から前記載置台へ向けて突出し、内周縁部が隙間を挟んで当該載置台の側周に対向して、前記処理室を上下に区画する第1の環状体と、
下端部が前記載置台の周縁部よりも下方に位置するように、前記第1の環状体の内周縁部から下方に延伸されて形成される第2の環状体と、
前記第2の環状体における内周面から下端面に亘って沿う流路形成面を備えるように前記載置台の周縁部から延伸されて形成され、前記隙間に漏れた前記成膜ガスをトラップして前記流路形成面及び前記第2の環状体に成膜させるための屈曲流路を当該第2の環状体との間に形成する第3の環状体と、
を備えた成膜装置。 - 前記流路形成面は、前記第2の環状体の内周面から下端面を介して外周面に亘って沿い、
前記屈曲流路は上下方向に折り返される流路である請求項1記載の成膜装置。 - 前記第3の環状体は、
前記流路形成面の一部を形成すると共に前記第2の環状体の内周面に沿う第1の周面を備え、前記載置部に支持される第1の部品と、
前記流路形成面の一部を形成すると共に前記第2の環状体の外周面に沿う第2の周面を備え、前記第1の部品に支持される第2の部品と、により構成され、
前記第1の部品と前記第2の部品とは別個に成形されている請求項2記載の成膜装置。 - 前記第2の部品は、
前記第2の環状体の外周面を囲み、その内周面が前記第2の周面を形成する上側環状体と、
前記内周面から上側環状体の中心側に向けて延伸され、その上面が前記第2の環状体の下端面に対向する下側環状体と、を備え、
前記第1の部品は、
その外周面が前記第1の周面を形成する内側環状体と、
前記外周面から当該内側環状体の外側へ向けて延伸され、前記下側環状体を下方から支持する支持部と、を備える請求項3記載の成膜装置。 - 前記第1の部品、前記第2の部品は各々セラミックスにより構成される請求項2ないし4のいずれか一つに記載の成膜装置。
- 前記屈曲流路は、縦断面で見た幅が1.0mm〜5.0mmである部位を備えるように形成される請求項1ないし4のいずれか一つに記載の成膜装置。
- 前記成膜ガス供給部は、
成膜ガスである原料ガスと、当該前記原料ガスと反応して反応生成物を生成する反応ガスと、を交互に繰り返し供給し、且つ原料ガスが供給される期間と反応ガスが供給される期間との間の期間にパージガスを供給し、
前記真空容器の底部には、前記成膜ガスが前記載置部の下面に付着することを抑制するパージガスを供給するためのパージガス供給口が設けられ、
前記成膜ガス供給部から原料ガス、反応ガス、パージガスが各々吐出される間、当該パージガス供給口からは3.0L/分〜20L/分でパージガスが供給される請求項1ないし6記載の成膜装置。 - 基板に成膜ガスを供給する成膜装置を用いた成膜方法において、
真空容器の処理室に真空雰囲気を形成する工程と、
下側の中心部が支持部により前記処理室に支持されると共に下側の周縁部が前記真空容器の底部から離間して設けられる載置部の上側に基板を載置する工程と、
前記載置部の上方に当該載置部に対向して設けられる成膜ガス供給部から、前記基板に成膜ガスを供給して成膜する工程と、
前記真空容器の側壁に、前記載置台の外周に沿って開口した排気口から排気する工程と、を備え、
前記成膜装置は、前記真空容器の側壁の前記排気口の下方から前記載置台へ向けて突出し、内周縁部が隙間を挟んで当該載置台の側周に対向して、前記処理室を上下に区画する第1の環状体と、
下端部が前記載置台の周縁部よりも下方に位置するように、前記第1の環状体の内周縁部から下方に延伸されて形成される第2の環状体と、
前記第2の環状体における内周面から下端面に亘って沿う流路形成面を備えるように前記載置台の周縁部から延伸されて形成された第3の環状体と、を備え、
前記隙間に漏れた前記成膜ガスを前記第2の環状体と前記第3の環状体との間に形成される屈曲流路にトラップして前記流路形成面及び当該第2の環状体に成膜させる工程と、
を備えた成膜方法。
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WO2014103168A1 (ja) * | 2012-12-26 | 2014-07-03 | キヤノンアネルバ株式会社 | 基板処理装置 |
WO2014178160A1 (ja) * | 2013-04-30 | 2014-11-06 | 東京エレクトロン株式会社 | 成膜装置 |
JP2016025238A (ja) * | 2014-07-22 | 2016-02-08 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
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KR20200018269A (ko) | 2020-02-19 |
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KR102350494B1 (ko) | 2022-01-14 |
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