TW202015158A - Transfer system of mask and producing method of mask integrated frame - Google Patents

Transfer system of mask and producing method of mask integrated frame Download PDF

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TW202015158A
TW202015158A TW108127574A TW108127574A TW202015158A TW 202015158 A TW202015158 A TW 202015158A TW 108127574 A TW108127574 A TW 108127574A TW 108127574 A TW108127574 A TW 108127574A TW 202015158 A TW202015158 A TW 202015158A
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mask
frame
temperature
loading
unit
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李炳一
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南韓商Tgo科技股份有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736Loading to or unloading from a conveyor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

The present invention relates to a mask-transfer system and a method for manufacturing a mask having an integrated frame. The mask-transfer system, according to the present invention, is a system that transfers a mask for the formation of OLED pixels, by which, in a step for integrally forming a mask and a frame that supports the mask, the mask is loaded and transferred, the system being characterized by comprising: a mask loading part which can adsorb one surface of the mask, thereby loading same; and a transfer unit which moves and flips the mask loading part.

Description

遮罩移送系統及框架一體型遮罩的製造方法Mask transfer system and manufacturing method of frame-integrated mask

本發明是關於遮罩移送系統及框架一體型遮罩的製造方法。更加詳細而言,涉及能夠將遮罩與框架形成一體,並能夠改善遮罩與框架的黏著性,且使各個遮罩之間的對準(align)精確的遮罩移送系統及框架一體型遮罩的製造方法。The invention relates to a mask transfer system and a method for manufacturing a frame-integrated mask. In more detail, it relates to a mask transfer system capable of integrating a mask with a frame, improving the adhesion between the mask and the frame, and aligning each mask with precision, and a frame-integrated mask Hood manufacturing method.

最近,正在進行薄板製造中的有關電鑄(Electroforming)方法的研究。電鑄方法是在電解液中浸漬陽極和陰極,並施加電源,使金屬薄板在陰極的表面上電鍍,因而是能夠製造電極薄板並且有望大量生産的方法。Recently, research on electroforming methods in thin plate manufacturing is underway. The electroforming method is to impregnate the anode and cathode in the electrolyte, and apply power to make the metal thin plate electroplated on the surface of the cathode, so it is a method capable of manufacturing the electrode thin plate and expected to be mass-produced.

另一方面,作為OLED製造工藝中形成像素的技術,主要使用FMM(Fine Metal Mask)方法,該方法將薄膜形式的金屬遮罩(Shadow Mask,陰影遮罩)緊貼於基板並且在所需位置上沉積有機物。On the other hand, as the technology for forming pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method is mainly used, which closely fits the shadow mask in the form of a thin film to the substrate and is in a desired position Organic matter is deposited on it.

在現有的OLED製造工藝中,將遮罩製造成條狀、板狀等之後,將遮罩焊接固定到OLED像素沉積框架並使用。一個遮罩上可以具備與一個顯示器對應的多個單元。另外,為了製造大面積OLED,可將多個遮罩固定於OLED像素沉積框架,在固定於框架的過程中,拉伸各個遮罩,以使其變得平坦。調節拉伸力以使遮罩的整體部分變得平坦是非常困難的作業。特別是,為了使各個單元全部變得平坦,同時對準尺寸僅為數μm至數十μm的遮罩圖案,需要微調施加到遮罩各側的拉伸力並且實時確認對準狀態的高度作業要求。In the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. Multiple units corresponding to one display may be provided on one mask. In addition, in order to manufacture a large-area OLED, a plurality of masks can be fixed to the OLED pixel deposition frame. During the process of fixing to the frame, each mask is stretched to make it flat. It is very difficult to adjust the stretching force to flatten the entire part of the mask. In particular, in order to flatten all the cells and align the mask pattern with a size of only a few μm to several tens of μm, it is necessary to fine-tune the tensile force applied to each side of the mask and confirm the height of the alignment state in real time. .

儘管如此,在將多個遮罩固定於一個框架過程中,仍然存在遮罩之間以及遮罩單元之間對準不好的問題。另外,在將遮罩焊接固定於框架的過程中,遮罩膜的厚度過薄且面積大,因此存在遮罩因荷重而下垂或者扭曲的問題,以及焊接過程中因焊接部分發生的皺紋、毛邊(burr)等使遮罩單元的對準錯開的問題等。Nevertheless, in the process of fixing multiple masks to one frame, there is still a problem of poor alignment between the masks and between the mask units. In addition, in the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to load, and wrinkles and burrs that occur in the welded part during the welding process (Burr), etc. problems such as misalignment of the mask unit.

在超高清的OLED中,現有的QHD(Quarter High Definition)畫質為500-600PPI(pixel per inch),像素的尺寸達到約30-50μm,而4K UHD(Ultra High Definition)、8K UHD高清具有比之更高的~860PPI,~1600PPI等的解析度。如此,考慮到超高清的OLED的像素尺寸,需要將各單元之間的對準誤差縮減為數μm程度,超出這一誤差將導致産品的不良,所以產率可能極低。因此,需要開發能夠防止遮罩的下垂或者扭曲等變形並且使對準精確的技術,以及將遮罩固定於框架的技術等。In ultra-high-definition OLED, the existing QHD (Quarter High Definition) image quality is 500-600PPI (pixel per inch), the pixel size reaches about 30-50μm, and 4K UHD (Ultra High Definition), 8K UHD HD has a comparison The higher resolution is ~860PPI, ~1600PPI, etc. In this way, considering the pixel size of the ultra-high-definition OLED, the alignment error between the units needs to be reduced to a degree of several μm. Exceeding this error will result in defective products, so the yield may be extremely low. Therefore, it is necessary to develop a technique capable of preventing deformation such as sagging or twisting of the mask and accurately aligning it, and a technique of fixing the mask to the frame and the like.

發明欲解決之課題 因此,本發明是為瞭解決上述現有技術中的問題而提出的,其目的在於,提供一種將遮罩黏合到框架上時,不僅可以防止遮罩發生變形且能夠改善遮罩與框架的黏著性之遮罩移送系統。Problems to be solved by invention Therefore, the present invention is proposed to solve the above-mentioned problems in the prior art, and its object is to provide a method for not only preventing deformation of the mask but also improving the adhesion between the mask and the frame when the mask is adhered to the frame Mask transfer system.

又,本發明的目的在於提供一種使遮罩平坦地展開並能夠穩定地移送的遮罩移送系統Moreover, the objective of this invention is to provide the mask transfer system which spreads a mask flatly and can be stably transferred.

又,本發明的目的在於提供一種遮罩與框架可構成一體型構造之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask in which the mask and the frame can form an integrated structure.

又,本發明之目的在於提供一種防止遮罩下垂或扭曲等的變形,並且可準確地進行對準之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that can prevent deformation such as sagging or twisting of the mask and can be accurately aligned.

又,本發明之目的在於提供一種明顯縮短製造時間,並且使産率顯著提升之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that significantly reduces manufacturing time and significantly improves productivity.

解決課題之方法 本發明的上述目的藉由一種遮罩移送系統達成,該系統為在一體形成遮罩與用於支撐遮罩的框架的工藝中裝載並移動遮罩之OLED像素形成用遮罩的遮罩移送系統,該系統包括遮罩裝載部,其吸附遮罩的一面並可進行裝載;以及移送部,其移動遮罩裝載部並對其進行翻轉(flip)。Ways to solve the problem The above object of the present invention is achieved by a mask transfer system that is a mask transfer system that loads and moves a mask for forming an OLED pixel of a mask in a process of integrally forming a mask and a frame for supporting the mask The system includes a mask loading part that attracts one side of the mask and can be loaded; and a transfer part that moves and flips the mask loading part.

遮罩裝載部為平板形狀,且與遮罩對應的一面上可形成有多個真空孔(vacuum hole)。The mask loading portion has a flat plate shape, and a plurality of vacuum holes may be formed on a surface corresponding to the mask.

遮罩裝載部的角部形成有凹陷部,遮罩裝載部的面積大於遮罩的面積,若遮罩裝載於遮罩裝載部上,則至少遮罩的角部可向凹陷部的外側突出。A recessed portion is formed at a corner of the mask loading portion, and the area of the mask loading portion is larger than the area of the mask. If the mask is loaded on the mask loading portion, at least the corner of the mask may protrude outside the recessed portion.

遮罩裝載部可包括加熱部。The mask loading part may include a heating part.

遮罩裝載部與遮罩的焊接部對應的之部分上可形成有鐳射貫穿孔。A laser penetrating hole may be formed in a portion of the mask mounting portion corresponding to the welding portion of the mask.

移送部連接於與遮罩接觸的遮罩裝載部的一面相對的另一面,移送部使遮罩裝載部向X、Y、Z、θ軸移動,且翻轉遮罩裝載部使遮罩朝向下方。The transfer part is connected to the other side of the mask loading part that is in contact with the mask, and the transfer part moves the mask loading part toward the X, Y, Z, and θ axes, and reverses the mask loading part so that the mask faces downward.

另外,本發明的上述目的藉由一種框架一體型遮罩的製造方法達成,該方法為使至少一個遮罩與用於支撐遮罩的框架形成為一體的框架一體型遮罩的製造方法,該方法包括:(a)提供具備至少一個遮罩單元區域的框架;(b)使遮罩的一面吸附於遮罩裝載部上並進行裝載;(c)將遮罩裝載部裝載於框架上,且使遮罩與框架的遮罩單元區域對應;以及(d)向遮罩的焊接部照射鐳射,以使遮罩黏合到框架上。In addition, the above object of the present invention is achieved by a method of manufacturing a frame-integrated mask, which is a method of manufacturing a frame-integrated mask in which at least one mask is integrated with a frame for supporting the mask, the The method includes: (a) providing a frame with at least one mask unit area; (b) attaching one side of the mask to the mask loading portion and loading it; (c) loading the mask loading portion on the frame, and Make the mask correspond to the mask unit area of the frame; and (d) irradiate laser to the welding part of the mask to make the mask adhere to the frame.

遮罩裝載部為平板形狀,且與遮罩對應的一面上形成有多個真空孔(vacuum hole),步驟(b)中,在多個真空孔向遮罩的一面施加抽吸壓力,可以使遮罩吸附到遮罩裝載部上。The mask loading part has a flat plate shape, and a plurality of vacuum holes are formed on the side corresponding to the mask. In step (b), applying suction pressure to the side of the mask in the plurality of vacuum holes can make The mask is attracted to the mask loading part.

步驟(b)可包括以下步驟:(b1)真空移送部吸附遮罩的至少兩側;以及(b2)移動真空移送部,以使遮罩的一面吸附於遮罩裝載部上並進行裝載。Step (b) may include the following steps: (b1) the vacuum transfer part adsorbs at least two sides of the mask; and (b2) moves the vacuum transfer part so that one side of the mask is adsorbed on the mask loading part and loaded.

在步驟(b1)或者步驟(b2)中,真空移送部向外側拉拽吸附的遮罩,以使遮罩能夠平坦地展開。In step (b1) or step (b2), the vacuum transfer unit pulls the attracted mask outward so that the mask can be spread out flatly.

步驟(c)可包括以下步驟:(c1)翻轉遮罩裝載部,以使遮罩朝向下方;(c2)移送部控制遮罩裝載部的位置,以使遮罩在框架的單元區域上對準;以及(c3)將遮罩裝載部裝載於框架上,以使遮罩與框架的遮罩單元區域對應Step (c) may include the following steps: (c1) flip the mask loading part so that the mask faces downward; (c2) the transfer part controls the position of the mask loading part so that the mask is aligned on the unit area of the frame ; And (c3) Mount the mask loading part on the frame so that the mask corresponds to the mask unit area of the frame

將遮罩與遮罩單元區域對應之前或之後,將包含有框架的工藝區域的溫度提升至第一溫度,使遮罩黏合於框架上之後,可以將包含有框架的工藝區域的溫度可以降低至第二溫度。Before or after the mask corresponds to the mask unit area, the temperature of the process area containing the frame is raised to the first temperature, and after the mask is adhered to the frame, the temperature of the process area containing the frame can be reduced to The second temperature.

第一溫度等於或高於OLED像素沉積工藝的溫度,第二溫度為至少低於第一溫度的溫度,第一溫度是25℃至60℃中任意一個溫度,第二溫度是比第一溫度低且20℃至30℃中任意一個溫度,OLED像素沉積工藝的溫度可以是25℃至45℃中任意一個溫度。The first temperature is equal to or higher than the temperature of the OLED pixel deposition process, the second temperature is a temperature at least lower than the first temperature, the first temperature is any temperature from 25°C to 60°C, and the second temperature is lower than the first temperature In addition, the temperature of the OLED pixel deposition process may be any temperature from 25°C to 45°C at any temperature from 20°C to 30°C.

遮罩裝載部包括加熱部,在步驟(b)與步驟(c)之間,可以使遮罩保持比第一溫度高3℃至10℃的溫度。The mask loading section includes a heating section, and between step (b) and step (c), the mask can be maintained at a temperature 3°C to 10°C higher than the first temperature.

發明效果 根據如上構成的本發明,將遮罩黏合到框架上時,不僅可以防止遮罩發生變形且能夠改善遮罩與框架的黏著性。Invention effect According to the present invention configured as above, when the mask is adhered to the frame, not only can the deformation of the mask be prevented, but also the adhesion between the mask and the frame can be improved.

又,根據本發明,能夠使遮罩平坦地展開且穩定地移送。In addition, according to the present invention, the mask can be spread flatly and stably transferred.

又,根據本發明,遮罩與框架可構成一體型結構。Furthermore, according to the present invention, the cover and the frame can form an integrated structure.

又,根據本發明,可防止遮罩下垂或扭曲等的變形,並且可準確地進行對準。In addition, according to the present invention, deformation such as sagging or twisting of the mask can be prevented, and alignment can be accurately performed.

又,根據本發明,可使製造時間顯著地縮短,且使產率顯著上昇。In addition, according to the present invention, the manufacturing time can be significantly shortened, and the yield can be significantly increased.

後述的對於本發明的詳細說明將參照附圖,該附圖將能夠實施本發明的特定實施例作為示例示出。充分詳細地說明這些實施例,以使所屬技術領域中具有通常知識者能夠實施本發明。應當理解,本發明的各種實施例雖然彼此不同,但是並非相互排斥。例如,在此記載的特定形狀、結構及特性與一實施例有關,在不脫離本發明的精神及範圍的情況下,能夠實現為其他實施例。另外,應當理解,各個公開的實施例中的個別構成要素的位置或配置,在不脫離本發明的精神及範圍的情況下,能夠進行變更。因此,後述的詳細說明不應被視為具有限制意義,只要適當地說明,則本發明的範圍僅由所附的申請專利範圍及與其等同的所有範圍限定。圖式中相似的符號從多方面表示相同或相似的功能,為了方便起見,長度、面積、厚度及其形狀可以誇大表示。The detailed description of the present invention described later will refer to the accompanying drawings, which show specific embodiments capable of implementing the present invention as examples. These embodiments are described in sufficient detail to enable those skilled in the art to implement the present invention. It should be understood that although the various embodiments of the present invention are different from each other, they are not mutually exclusive. For example, the specific shapes, structures, and characteristics described herein are related to one embodiment, and can be implemented as other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of individual constituent elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description should not be regarded as limiting, and as long as it is properly described, the scope of the present invention is limited only by the scope of the attached patent application and all ranges equivalent thereto. Similar symbols in the drawings represent the same or similar functions in many ways. For convenience, the length, area, thickness, and shape can be exaggerated.

以下,將參照圖式對本發明的優選實施例進行詳細說明,以便所屬技術領域中具有通常知識者能夠容易地實施本發明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings so that those skilled in the art can easily implement the present invention.

圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.

參照圖1,現有的遮罩10可以以條式(Stick-Type)或者板式(Plate-Type)製造。圖1的(a)中示出的遮罩10作為條式遮罩,可以將條的兩側焊接固定於OLED像素沉積框架並使用。圖1的(b)中示出的遮罩100作為板式(Plate-Type)遮罩,可以使用於大面積的像素形成工藝。Referring to FIG. 1, the existing mask 10 may be manufactured in stick-type or plate-type. The mask 10 shown in (a) of FIG. 1 serves as a strip mask, and both sides of the strip can be welded and fixed to the OLED pixel deposition frame and used. The mask 100 shown in (b) of FIG. 1 can be used as a plate-type (Plate-Type) mask in a large-area pixel formation process.

遮罩10的主體(Body,或者遮罩膜11)具備多個顯示單元C。一個單元C與智慧手機等的一個顯示器(display)對應。單元C中形成有像素圖案P,以便與顯示器的各個像素對應。放大單元C時,顯示與R、G、B對應的多個像素圖案P。作為一例,在單元C中形成有像素圖案P,以便具有70×140解析度。即,大量的像素圖案P形成集合,以構成一個單元C,並且多個單元C可以形成於遮罩10。The body (Body, or mask film 11) of the mask 10 is provided with a plurality of display units C. One unit C corresponds to one display such as a smartphone. A pixel pattern P is formed in the cell C so as to correspond to each pixel of the display. When the unit C is enlarged, a plurality of pixel patterns P corresponding to R, G, and B are displayed. As an example, a pixel pattern P is formed in the cell C so as to have a resolution of 70×140. That is, a large number of pixel patterns P form a set to constitute one unit C, and a plurality of units C may be formed on the mask 10.

圖2是示出現有的將遮罩10黏合於框架20的過程的概略圖。圖3是示出在現有的拉伸F1~F2遮罩10的過程中發生單元之間的對準誤差的概略圖。以圖1的(a)示出的具備6個單元C(C1~C6)的條式遮罩10為例進行說明。FIG. 2 is a schematic diagram showing a conventional process of bonding the mask 10 to the frame 20. FIG. 3 is a schematic diagram showing that an alignment error between cells occurs during the conventional stretching of the F1 to F2 mask 10. The strip mask 10 including six units C (C1 to C6) shown in (a) of FIG. 1 will be described as an example.

參照圖2的(a),首先,應將條式遮罩10平坦地展開。沿著條式遮罩10的長軸方向施加拉伸力F1~F2,隨著拉伸,展開條式遮罩10。在該狀態下,將條式遮罩10裝載於方框形狀的框架20上。條式遮罩10的單元C1~C6將位於框架20的框內部空白區域部分。框架20的尺寸可以足以使一個條式遮罩10的單元C1~C6位於框內部空白區域,也可以足以使多個條式遮罩10的單元C1~C6位於框內部空白區域。Referring to (a) of FIG. 2, first, the strip mask 10 should be spread out flat. Tensile forces F1 to F2 are applied along the long axis direction of the strip mask 10, and the strip mask 10 is unfolded as it is stretched. In this state, the strip mask 10 is mounted on the frame 20 in a frame shape. The units C1 to C6 of the strip mask 10 will be located in the blank area inside the frame of the frame 20. The size of the frame 20 may be enough to make the units C1 to C6 of one strip mask 10 located in the blank area inside the frame, or may be enough to make the units C1 to C6 of multiple strip masks 10 located in the blank area inside the frame.

參照圖2的(b),微調施加到條式遮罩10的各側的拉伸力F1~F2,同時對準後,隨著焊接W條式遮罩10側面的一部分,將條式遮罩10和框架20彼此連接。圖2的(c)示出彼此連接的條式遮罩10和框架的側截面。Referring to (b) of FIG. 2, finely adjust the tensile forces F1 to F2 applied to each side of the strip mask 10, and at the same time, after alignment, as the part of the side surface of the strip mask 10 is welded, the strip mask 10 and the frame 20 are connected to each other. (C) of FIG. 2 shows a side section of the strip cover 10 and the frame connected to each other.

參照圖3,儘管微調施加到條式遮罩10的各側的拉伸力F1~F2,但是顯示出遮罩單元C1~C3彼此之間對準不好的問題。例如,單元C1~C3的圖案P之間的距離D1~D1''、D2~D2''彼此不同,或者圖案P歪斜。由於條式遮罩10具有包括多個(作為一例,為6個)單元C1~C6的大面積,且具有數十μm的非常薄的厚度,因此容易因荷重而下垂或者扭曲。另外,調節拉伸力F1~F2,以使各個單元C1~C6全部變得平坦,同時通過顯微鏡實施確認各個單元C1~C6之間的對準狀態是非常困難的作業。Referring to FIG. 3, although fine adjustments of the stretching forces F1 to F2 applied to the sides of the strip mask 10, the problem is that the mask units C1 to C3 are not well aligned with each other. For example, the distances D1~D1", D2~D2" between the patterns P of the cells C1~C3 are different from each other, or the pattern P is skewed. Since the strip mask 10 has a large area including a plurality (6 cells as an example) of cells C1 to C6 and has a very thin thickness of several tens of μm, it is easy to sag or twist due to load. In addition, it is very difficult to adjust the tensile forces F1 to F2 so that all the cells C1 to C6 are flat, and confirming the alignment state between the cells C1 to C6 with a microscope.

因此,拉伸力F1~F2的微小誤差可能引起條式遮罩10各單元C1~C3的拉伸或者展開程度的誤差,由此,導致遮罩圖案P之間的距離D1~D1''、D2~D2''不同。雖然完美地對準以使誤差為0是非常困難的,但是為了避免尺寸為數μm至數十μm的遮罩圖案P對超高清OLED的像素工藝造成壞影響,對準誤差優選不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度(pixel position accuracy,PPA)。Therefore, a slight error in the stretching forces F1 to F2 may cause an error in the degree of stretching or unfolding of the cells C1 to C3 of the strip mask 10, thereby causing the distance D1 to D1'' between the mask patterns P, D2~D2'' are different. Although it is very difficult to perfectly align so that the error is 0, in order to avoid the mask pattern P having a size of several μm to several tens of μm from adversely affecting the pixel process of the ultra-high-definition OLED, the alignment error is preferably not more than 3 μm. The alignment error between such adjacent units is called pixel position accuracy (PPA).

另外,將大概6-20個條式遮罩10分別連接在一個框架20,同時使多個條式遮罩10之間,以及條式遮罩10的多個單元C-C6之間的對準狀態精確是非常困難的作業,並且只能增加基於對準的工藝時間,這成為降低生産性的重要理由。In addition, approximately 6-20 strip masks 10 are respectively connected to one frame 20, and the alignment between the plurality of strip masks 10 and the plurality of cells C-C6 of the strip mask 10 are simultaneously aligned Precise state is a very difficult task, and can only increase the process time based on alignment, which becomes an important reason for reducing productivity.

另一方面,將條式遮罩10連接固定到框架20後,施加到條式遮罩10的拉伸力F1~F2能夠反向地作用於框架20。即,由於拉伸力F1~F2而繃緊拉伸的條式遮罩10連接在框架20後,能夠將張力(tension)作用於框架20。通常,該張力不大,不會對框架20產生大的影響,但是在框架20的尺寸實現小型化且剛性變低的情況下,這種張力可能使框架20細微變形。如此,可能發生破壞多個單元C~C6間的對準狀態的問題。On the other hand, after the strip mask 10 is connected and fixed to the frame 20, the tensile forces F1 to F2 applied to the strip mask 10 can act on the frame 20 in the reverse direction. That is, after the strip mask 10 stretched and stretched due to the tensile forces F1 to F2 is connected to the frame 20, it is possible to apply tension to the frame 20. Generally, this tension is not large, and it does not have a great influence on the frame 20, but when the size of the frame 20 is miniaturized and the rigidity becomes low, such tension may slightly deform the frame 20. In this way, a problem may occur that the alignment state between the plurality of cells C to C6 is broken.

鑒於此,本發明提出能夠使遮罩100與框架200形成一體式結構的框架200以及框架一體型遮罩。與框架200形成一體的遮罩100不僅防止發生下垂或者扭曲等變形,並且能夠與框架200精確地對準。當遮罩100連接到框架200時,不對遮罩100施加任何拉伸力,因此遮罩100連接到框架200後,可以不對遮罩200施加引起變形的張力。並且,能夠顯著地縮短將遮罩100一體地連接到框架200上的製造時間,且顯著提升産率。In view of this, the present invention proposes a frame 200 and a frame-integrated mask capable of forming the mask 100 and the frame 200 into an integrated structure. The mask 100 integrated with the frame 200 not only prevents deformation such as sagging or twisting, but also can be accurately aligned with the frame 200. When the mask 100 is connected to the frame 200, no tensile force is applied to the mask 100, and therefore, after the mask 100 is connected to the frame 200, no tension may be applied to the mask 200 to cause deformation. Also, the manufacturing time for integrally connecting the mask 100 to the frame 200 can be significantly shortened, and the productivity can be significantly improved.

圖4是示出本發明的一實施例涉及的框架一體型遮罩的主視圖(圖4的(a))以及側截面圖(圖4的(b)),圖5是示出本發明的一實施例涉及的框架的主視圖(圖5的(a))以及側截面圖(圖5的b)。4 is a front view (FIG. 4(a)) and a side cross-sectional view (FIG. 4(b)) showing a frame-integrated mask according to an embodiment of the present invention, and FIG. 5 is a diagram showing the present invention. A front view ((a) of FIG. 5) and a side cross-sectional view (b of FIG. 5) of the frame according to an embodiment.

參照圖4以及圖5,框架一體型遮罩可以包括多個遮罩100與一個框架200。換句話說,將多個遮罩100分別黏合於框架200的形態。以下,為了便於說明,以四角形狀的遮罩100為例進行說明,但是遮罩100在黏合於框架200之前,可以是兩側具備用於夾持的突出部的條式遮罩形狀,遮罩100黏合於框架200之後,可以去除突出部。4 and 5, the frame-integrated mask may include a plurality of masks 100 and a frame 200. In other words, each mask 100 is bonded to the frame 200. In the following, for convenience of explanation, a quadrangular mask 100 is taken as an example for description, but before the mask 100 is adhered to the frame 200, it may be a strip mask shape with a protrusion for clamping on both sides, the mask After 100 is bonded to the frame 200, the protrusion can be removed.

各個遮罩100上形成有多個遮罩圖案P,一個遮罩100可以形成有一個單元C。一個遮罩單元C可以與智慧手機等的一個顯示器對應。遮罩100可以以電鑄(electroforming)方式形成,以便能夠以薄的厚度形成。遮罩100可以是熱膨脹係數約為1.0×10-6 /℃的恆範鋼(invar)或約為1.0×10-7 /℃的超恆範鋼(super invar)材料。由於這種材料的遮罩100的熱膨脹係數非常低,遮罩的圖案形狀因熱能變形的可能性小,在製造高解析度的OLED中,可以用作FMM(Fine Metal Mask)、陰影遮罩(Shadow Mask)。此外,考慮到最近開發在溫度變化值不大的範圍內實施像素沉積工藝的技術,遮罩100也可以是熱膨脹係數比之略大的鎳(Ni)、鎳-鈷(Ni-Co)等材料。遮罩的厚度可以為2μm至50μm。A plurality of mask patterns P are formed on each mask 100, and one unit C may be formed in one mask 100. One mask unit C may correspond to one display of a smartphone or the like. The mask 100 may be formed in an electroforming manner so as to be able to be formed in a thin thickness. The mask 100 may be an invar with a thermal expansion coefficient of about 1.0×10 −6 /°C or a super invar material with a thermal expansion of about 1.0×10 −7 /°C. Since the thermal expansion coefficient of the mask 100 of this material is very low, the pattern shape of the mask is less likely to be deformed by thermal energy, and it can be used as a FMM (Fine Metal Mask) or shadow mask in the manufacture of high-resolution OLEDs. Shadow Mask). In addition, considering the recently developed technology for implementing the pixel deposition process within a range where the temperature change value is not large, the mask 100 may also be a material such as nickel (Ni), nickel-cobalt (Ni-Co) with a slightly larger thermal expansion coefficient . The thickness of the mask may be 2 μm to 50 μm.

框架200以能夠黏合多個遮罩100的形式形成。包括最週邊邊緣在內,框架200可以包括沿著第一方向(例如,橫向)、第二方向(例如,竪向)形成的多個角部。這種多個角部可以在框架200上劃分用於黏合遮罩100的區域。The frame 200 is formed in a form capable of bonding a plurality of masks 100. Including the most peripheral edge, the frame 200 may include a plurality of corners formed along the first direction (eg, lateral direction) and the second direction (eg, vertical direction). Such multiple corners may define an area on the frame 200 for bonding the mask 100.

框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。即,邊緣框架部210可以包括中空區域R。框架200可以由恒範鋼、超恒範鋼、鋁、鈦等金屬材料形成,考慮到熱變形,優選由與遮罩具有相同熱膨脹係數的恆範鋼、超恆範鋼、鎳、鎳-鈷等材料形成,這些材料均可應用於所有作為框架200的構成要素的邊緣框架部210、遮罩單元片材部220。The frame 200 may include an edge frame portion 210 having a substantially rectangular shape or a square shape. The inside of the edge frame part 210 may have a hollow shape. That is, the edge frame part 210 may include the hollow region R. The frame 200 may be formed of metal materials such as constant steel, super constant steel, aluminum, titanium, etc. In consideration of thermal deformation, it is preferably made of constant steel, super constant steel, nickel, nickel-cobalt with the same thermal expansion coefficient as the mask These materials can be applied to all of the edge frame portion 210 and the mask unit sheet portion 220 that are constituent elements of the frame 200.

另外,框架200具備多個遮罩單元區域CR,並且可以包括連接到邊緣框架部210的遮罩單元片材部220。遮罩單元片材部220與遮罩100相同,可通過電鑄形成,或者通過使用其他的成膜工藝形成。另外,遮罩單元片材部220可以通過鐳射劃綫、蝕刻等在平面狀片材(sheet)上形成多個遮罩單元區域CR後,連接到邊緣框架部210。或者,遮罩單元片材部220可以將平面狀的片材連接到邊緣框架部210後,通過鐳射劃線、蝕刻等形成多個遮罩單元區域CR。本說明書中主要對首先在遮罩單元片材部220形成多個遮罩單元區域CR後,連接到邊緣框架部210的情況進行說明。In addition, the frame 200 is provided with a plurality of mask unit regions CR, and may include the mask unit sheet portion 220 connected to the edge frame portion 210. The mask unit sheet portion 220 is the same as the mask 100, and can be formed by electroforming or by using another film forming process. In addition, the mask unit sheet portion 220 can be connected to the edge frame portion 210 after forming a plurality of mask unit regions CR on a planar sheet by laser scribing, etching, or the like. Alternatively, the mask unit sheet portion 220 may form a plurality of mask unit regions CR by laser scribing, etching, or the like after connecting a planar sheet to the edge frame portion 210. In this specification, the case where the plurality of mask unit regions CR are first formed in the mask unit sheet portion 220 and then connected to the edge frame portion 210 will be described.

遮罩單元片材部220可以包括邊緣片材部221、第一柵格片材部223、第二柵格片材部225中的至少一種。邊緣片材部221、第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分,它們彼此之間形成為一體。The mask unit sheet portion 220 may include at least one of an edge sheet portion 221, a first grid sheet portion 223, and a second grid sheet portion 225. The edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 refer to portions divided on the same sheet, and they are formed integrally with each other.

邊緣片材部221可以實質上連接到邊緣框架部210上。因此,邊緣片材部221可以具有與邊緣框架部210對應的大致的四角形狀、方框形狀。The edge sheet portion 221 may be substantially connected to the edge frame portion 210. Therefore, the edge sheet portion 221 may have a substantially square shape or a square shape corresponding to the edge frame portion 210.

另外,第一柵格片材部223可以沿著第一方向(橫向)延伸形成。第一柵格片材部223以直綫形態形成,其兩端可以連接到邊緣片材部221。當遮罩單元片材部220包括多個第一柵格片材部223時,各個第一柵格片材部223優選具有相同的間距。In addition, the first grid sheet portion 223 may be formed to extend along the first direction (lateral direction). The first grid sheet portion 223 is formed in a straight line shape, and both ends thereof may be connected to the edge sheet portion 221. When the mask unit sheet portion 220 includes a plurality of first grid sheet portions 223, each first grid sheet portion 223 preferably has the same pitch.

另外,進一步地,第二柵格片材部225可以沿著第二方向(竪向)延伸形成,第二柵格片材部225以直綫形態形成,其兩端可以連接到邊緣片材部221。第一柵格片材部223和第二柵格片材部225可以彼此垂直交叉。當遮罩單元片材部220包括多個第二柵格片材部225時,各個第二柵格片材部225之間優選具有相同的間距。In addition, further, the second grid sheet portion 225 may be formed to extend along the second direction (vertical direction), the second grid sheet portion 225 is formed in a linear form, and both ends thereof may be connected to the edge sheet portion 221 . The first grid sheet portion 223 and the second grid sheet portion 225 may cross each other perpendicularly. When the mask unit sheet portion 220 includes a plurality of second grid sheet portions 225, each second grid sheet portion 225 preferably has the same pitch.

另一方面,根據遮罩單元C的尺寸,第一柵格片材部223之間的間距和第二柵格片材部225之間的間距可以相同或不同。On the other hand, according to the size of the mask unit C, the pitch between the first grid sheet portions 223 and the pitch between the second grid sheet portions 225 may be the same or different.

第一柵格片材部223及第二柵格片材部225雖然具有薄膜形態的薄的厚度,但是垂直於長度方向的截面的形狀可以是諸如矩形、平行四邊形的四角形形狀、三角形形狀等,邊、角的一部分可以形成圓形。截面形狀可以在鐳射劃綫、蝕刻等過程中進行調節。Although the first grid sheet portion 223 and the second grid sheet portion 225 have a thin thickness in the form of a thin film, the shape of the cross section perpendicular to the longitudinal direction may be such as a rectangular shape, a quadrangular shape of a parallelogram, a triangular shape, etc. Part of the sides and corners can be rounded. The cross-sectional shape can be adjusted during laser scribing, etching, etc.

邊緣框架部210的厚度可以大於遮罩單元片材部220的厚度。由於邊緣框架部210負責框架200的整體剛性,可以以數mm至數十cm的厚度形成。The thickness of the edge frame part 210 may be greater than the thickness of the mask unit sheet part 220. Since the edge frame part 210 is responsible for the overall rigidity of the frame 200, it may be formed with a thickness of several mm to several tens of cm.

就遮罩單元片材部220而言,實質上製造厚片材的工藝比較困難,若過厚,則有可能在OLED像素沉積工藝中有機物源600(參照圖14)堵塞通過遮罩100的路徑。相反,若過薄,則有可能難以確保足以支撐遮罩100的剛性。由此,遮罩單元片材部220優選比邊緣框架部210的厚度薄,但是比遮罩100更厚。遮罩單元片材部220的厚度可以約為0.1mm至1mm。並且,第一柵格片材部223、第二柵格片材部225的寬度可以約為1~5mm。For the mask unit sheet portion 220, the process of manufacturing a thick sheet is substantially difficult. If it is too thick, the organic matter source 600 (see FIG. 14) may block the path through the mask 100 in the OLED pixel deposition process . On the contrary, if it is too thin, it may be difficult to ensure sufficient rigidity to support the mask 100. Thus, the mask unit sheet portion 220 is preferably thinner than the thickness of the edge frame portion 210, but thicker than the mask 100. The thickness of the mask unit sheet portion 220 may be about 0.1 mm to 1 mm. In addition, the width of the first grid sheet portion 223 and the second grid sheet portion 225 may be approximately 1 to 5 mm.

在平面狀片材中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外,可以提供多個遮罩單元區域CR(CR11~CR56)。從另一個角度來說,遮罩單元區域CR可以是指在邊緣框架部210的中空區域R中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外的空白區域。In the planar sheet, in addition to the area occupied by the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225, a plurality of mask unit regions CR (CR11 to CR56) may be provided . From another perspective, the mask unit region CR may refer to the hollow region R of the edge frame portion 210 except for the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 A blank area outside the occupied area.

隨著遮罩100的單元C與該遮罩單元區域CR對應,實質上可以用作通過遮罩圖案P沉積OLED的像素的通道。如前所述,一個遮罩單元C與智慧手機等的一個顯示器對應。一個遮罩100中可以形成有用於構成一個單元C的遮罩圖案P。或者,一個遮罩100具備多個單元C且各個單元C可以與框架200的各個單元區域CR對應,但是為了精確地對準遮罩100,需要避免大面積遮罩100,較佳為具備一個單元C的小面積遮罩100。或者,也可以是具有多個單元C的一個遮罩100與遮罩200的一個單元區域CR對應。此時,為了精確地對準,可以考慮具有2-3個少數單元C的遮罩100與遮罩200的一個單元區域CR對應。As the cell C of the mask 100 corresponds to the mask cell region CR, it can be substantially used as a channel for depositing pixels of the OLED through the mask pattern P. As described above, one mask unit C corresponds to one display such as a smartphone. A mask pattern P for constituting one cell C may be formed in one mask 100. Alternatively, one mask 100 includes a plurality of cells C and each cell C can correspond to each cell region CR of the frame 200, but in order to accurately align the mask 100, it is necessary to avoid a large-area mask 100, preferably one unit C's small area mask 100. Alternatively, one mask 100 having a plurality of cells C may correspond to one cell region CR of the mask 200. At this time, for accurate alignment, it may be considered that the mask 100 having 2-3 minority cells C corresponds to one cell region CR of the mask 200.

遮罩200具備多個遮罩單元區域CR,可以將各個遮罩100以各個遮罩單元C與各個遮罩單元區域CR分別對應的方式黏合。各個遮罩100可以包括形成有多個遮罩圖案P的遮罩單元C以及遮罩單元C周邊的虛擬部(相當於除了單元C以外的遮罩膜110部分)。虛擬部可以只包括遮罩膜110,或者可以包括形成有與遮罩圖案P類似形態的規定的虛擬圖案的遮罩膜110。遮罩單元C與框架200的遮罩單元區域CR對應,虛擬部的一部分或者全部可以黏合於框架200(遮罩單元片材部220)。由此,遮罩100和框架200可以形成一體式結構。The mask 200 includes a plurality of mask unit regions CR, and each mask 100 can be bonded in such a manner that each mask unit C corresponds to each mask unit region CR. Each mask 100 may include a mask unit C in which a plurality of mask patterns P are formed, and a virtual portion around the mask unit C (equivalent to a portion of the mask film 110 other than the unit C). The dummy part may include only the mask film 110, or may include the mask film 110 formed with a prescribed dummy pattern in a form similar to the mask pattern P. The mask unit C corresponds to the mask unit region CR of the frame 200, and part or all of the virtual part may be adhered to the frame 200 (mask unit sheet part 220). Thus, the cover 100 and the frame 200 can form an integrated structure.

另一方面,根據另一實施例,框架不是以將遮罩單元片材部220黏合於邊緣框架部210的方式製造,而是可以使用在邊緣框架部210的中空區域R部分直接形成與邊緣框架部210成為一體的柵格框架(相當於柵格片材部223、225)的框架。這種形態的框架也包括至少一個遮罩單元區域CR,可以使遮罩100與遮罩單元區域CR對應,以製造框架一體型遮罩。On the other hand, according to another embodiment, the frame is not manufactured by adhering the mask unit sheet portion 220 to the edge frame portion 210, but may be formed directly in the hollow region R portion of the edge frame portion 210 with the edge frame The part 210 becomes a frame of an integrated grid frame (corresponding to the grid sheet parts 223, 225). The frame of this form also includes at least one mask unit region CR, and the mask 100 can be made to correspond to the mask unit region CR to manufacture a frame-integrated mask.

以下,對框架一體型遮罩的製造過程進行說明。Hereinafter, the manufacturing process of the frame-integrated mask will be described.

首先,可以提供圖4以及圖5中所述的框架200。圖6是示出本發明的一實施例涉及的框架200的製造過程的概略圖。First, the frame 200 described in FIGS. 4 and 5 may be provided. FIG. 6 is a schematic diagram showing the manufacturing process of the frame 200 according to an embodiment of the present invention.

參照圖6的(a),提供邊緣框架部210。邊緣框架部210可以是包括中空區域R的方框形狀。Referring to (a) of FIG. 6, an edge frame portion 210 is provided. The edge frame part 210 may have a box shape including a hollow region R.

其次,參照圖6的(b),製造遮罩單元片材部220。遮罩單元片材部220使用電鑄或者其他的成膜工藝製造平面狀的片材後,通過鐳射劃綫、蝕刻等,去除遮罩單元區域CR部分,從而可以製造。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。可以存在5個第一柵格片材部223及4個第二柵格片材部225。Next, referring to (b) of FIG. 6, the mask unit sheet portion 220 is manufactured. The mask unit sheet portion 220 is manufactured by using electroforming or other film-forming processes to manufacture a planar sheet, and then removing the mask unit region CR by laser scribing, etching, or the like. In this specification, the description will be made by forming a 6×5 mask cell region CR (CR11 to CR56) as an example. There may be five first grid sheet portions 223 and four second grid sheet portions 225.

其次,可以將遮罩單元片材部220對應於邊緣框架部210。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220的所有側部以使遮罩單元片材部220平坦伸展的狀態下,使邊緣片材部221與邊緣框架部210對應。在一側部也能以多個點(作為圖6的(b)的例,1~3點)夾持遮罩單元片材部220並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220。Second, the mask unit sheet portion 220 may correspond to the edge frame portion 210. In the corresponding process, the edge sheet portion 221 and the edge frame portion 210 may be made in a state where all the side portions of the mask unit sheet portion 220 of F1 to F4 are stretched so that the mask unit sheet portion 220 extends flatly correspond. The mask unit sheet portion 220 may be sandwiched and stretched at a plurality of points (1 to 3 points in the example of (b) in FIG. 6) on one side. On the other hand, the unit sheet portion 220 may be stretched by stretching F1 and F2 along a part of the side direction instead of all the sides.

然後,使遮罩單元片材部220與邊緣框架部210對應時,可以焊接W方式黏合遮罩單元片材部220的邊緣片材部221。優選地,焊接W所有側部,以便遮罩單元片材部220牢固地黏合於邊緣框架部210。應當最大限度地接近框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220之間的翹起空間,並提升黏著性。焊接W部分可以以線(line)或者點(spot)形狀生成,具有與遮罩單元片材部220相同的材料,並可以成為將邊緣框架部210和遮罩單元片材部220連接成一體的媒介。Then, when the mask unit sheet portion 220 corresponds to the edge frame portion 210, the edge sheet portion 221 of the mask unit sheet portion 220 may be bonded by welding. Preferably, all sides are welded so that the mask unit sheet portion 220 is firmly adhered to the edge frame portion 210. Welding W should be made as close as possible to the corner side of the frame portion 210 to minimize the warping space between the edge frame portion 210 and the mask unit sheet portion 220 and improve the adhesion. The welded W part may be formed in a line or spot shape, have the same material as the mask unit sheet portion 220, and may become an integral unit that connects the edge frame portion 210 and the mask unit sheet portion 220 medium.

圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。圖6的實施例首先製造具備遮罩單元區域CR的遮罩單元片材部220後,黏合於邊緣框架部210上,而圖7的實施例將平面狀的片材黏合於邊緣框架部210後,形成遮罩單元區域CR部分。7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. The embodiment of FIG. 6 first manufactures the mask unit sheet portion 220 having the mask unit area CR, and then adheres to the edge frame portion 210, while the embodiment of FIG. 7 adheres the planar sheet to the edge frame portion 210 To form the CR area of the mask unit area.

首先,與圖6的(a)相同地提供包括中空區域R的邊緣框架部210。First, the edge frame portion 210 including the hollow region R is provided in the same manner as in (a) of FIG. 6.

然後,參照圖7的(a),可以使平面狀的片材(平面狀的遮罩單元片材部220’)與邊緣框架部210對應。遮罩單元片材部220’是還未形成遮罩單元區域CR的平面狀態。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220’的所有側部以使遮罩單元片材部220’平坦伸展狀態下,使其與邊緣框架部210對應。在一側部也能以多個點(作為圖7的(a)的例,1~3點)夾持單元片材部220’並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220’。Then, referring to (a) of FIG. 7, a planar sheet (planar mask unit sheet portion 220 ′) may correspond to the edge frame portion 210. The mask unit sheet portion 220' is a planar state where the mask unit region CR has not yet been formed. In the corresponding process, all the side portions of the mask unit sheet portion 220' of F1 to F4 may be stretched to correspond to the edge frame section 210 in a state where the mask unit sheet portion 220' is extended flatly. On one side, the unit sheet portion 220' can be sandwiched and stretched at a plurality of points (1 to 3 points as an example in (a) of FIG. 7). On the other hand, the unit sheet portion 220' may be stretched by extending F1 and F2 along a part of the side direction instead of all sides.

然後,使遮罩單元片材部220’與邊緣框架部210對應時,可以使遮罩單元片材部220’的邊緣部分以焊接W方式進行黏合。優選地,焊接W所有側部,以便遮罩單元片材部220’牢固地黏合於邊緣框架部220。應當最大限度地接近邊緣框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220’之間的翹起空間,並提升黏著性。焊接W部分可以以線(line)或者點(spot)形狀生成,與遮罩單元片材部220’具有相同材料,並可以成為將邊緣框架部210和遮罩單元片材部220’連接成一體的媒介。Then, when the mask unit sheet portion 220' corresponds to the edge frame portion 210, the edge portion of the mask unit sheet portion 220' may be bonded by welding W. Preferably, all sides are welded so that the mask unit sheet portion 220' is firmly adhered to the edge frame portion 220. Welding W should be performed as close as possible to the corner side of the edge frame portion 210 to minimize the warping space between the edge frame portion 210 and the mask unit sheet portion 220', and to improve adhesion. The welded W part may be formed in a line or spot shape, and has the same material as the mask unit sheet portion 220', and may be formed by connecting the edge frame portion 210 and the mask unit sheet portion 220' together Medium.

然後,參照圖7的(b),在平面狀的片材(平面狀的遮罩單元片材部220’)上形成遮罩單元區域CR。通過鐳射劃線、蝕刻等,去除遮罩單元區域CR部分的片材,藉以可以形成遮罩單元區域CR。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。當形成遮罩單元區域CR時,可以構成遮罩單元片材部220,其中,與邊緣框架部210焊接W的部分成為邊緣片材部221,並且具備5個第一柵格片材部223以及4個第二柵格片材部225。Then, referring to (b) of FIG. 7, a mask unit region CR is formed on a planar sheet (planar mask unit sheet portion 220'). The mask unit region CR can be formed by removing a sheet of the mask unit region CR by laser scribing, etching, or the like. In this specification, the description will be made by forming a 6×5 mask cell region CR (CR11 to CR56) as an example. When the mask unit region CR is formed, the mask unit sheet portion 220 may be constituted, in which the portion W welded to the edge frame portion 210 becomes the edge sheet portion 221 and includes five first grid sheet portions 223 and Four second grid sheet sections 225.

圖8是示出本發明之一實施例涉及的遮罩100的移送系統的組成要素的概略圖。圖8的(a)是遮罩100的俯視圖及側截面圖,圖8的(b)是遮罩裝載部90的俯視圖及側截面圖。作為遮罩100的移送系統之遮罩裝載部90可以指使遮罩100對應並黏合於框架200之前,將遮罩100移送到框架200上的系統。FIG. 8 is a schematic diagram showing the components of the transfer system of the mask 100 according to an embodiment of the present invention. 8( a) is a plan view and a side cross-sectional view of the mask 100, and FIG. 8( b) is a plan view and a side cross-sectional view of the mask mounting portion 90. The mask loading part 90 as the transfer system of the mask 100 may refer to a system that transfers the mask 100 to the frame 200 before the mask 100 corresponds to and adheres to the frame 200.

參照圖8的(a),可以提供形成有多個遮罩圖案P的遮罩100。遮罩100可包括形成有多個遮罩圖案P的遮罩單元C及遮罩單元C周邊之虛擬部DM。虛擬部DM與除單元C以外的遮罩膜110部分對應,可以只包括遮罩膜110,或可以包括形成有與遮罩圖案P形態類似的規定的虛擬部圖案之遮罩膜110。與遮罩100之邊緣對應地,虛擬部DM的一部分或者全部可黏合於框架200[遮罩單元片材部220]。可以電鑄方式製造恆範鋼、超恆範鋼材料之遮罩100。Referring to (a) of FIG. 8, a mask 100 formed with a plurality of mask patterns P may be provided. The mask 100 may include a mask unit C formed with a plurality of mask patterns P and a dummy part DM around the mask unit C. The dummy part DM partially corresponds to the mask film 110 except the cell C, and may include only the mask film 110 or may include the mask film 110 formed with a predetermined dummy part pattern similar to the shape of the mask pattern P. Corresponding to the edge of the mask 100, part or all of the virtual part DM may be adhered to the frame 200 [mask unit sheet part 220]. The mask 100 of Hengfan Steel and Ultra Hengfan Steel materials can be manufactured by electroforming.

電鑄中,用作陰極(cathode)的母板(mother plate)使用導電性材料。作為導電性材料,金屬可以在表面上生成金屬氧化物,可以在製造金屬過程中流入有雜質,多晶矽基材可以存在夾雜物或者晶界(Grain Boundary),導電性高分子基材含有雜質的可能性高,並且強度、耐酸性等可能脆弱。將諸如金屬氧化物、雜質、夾雜物、晶界等的妨礙在母板(或者陰極)表面均勻形成電場的要素稱為“缺陷”(Defect)。由於缺陷(Defect),無法對上述材料的陰極施加均勻的電場,有可能導致不均勻地形成一部分鍍膜(遮罩100)。In electroforming, a conductive material is used for the mother plate used as a cathode. As a conductive material, metal can generate metal oxides on the surface, impurities can flow into the metal manufacturing process, polysilicon substrates can contain inclusions or grain boundaries (Grain Boundary), conductive polymer substrates may contain impurities High performance, and may be weak in strength and acid resistance. Elements such as metal oxides, impurities, inclusions, and grain boundaries that hinder the uniform formation of an electric field on the surface of the motherboard (or cathode) are called "defects." Due to defects, a uniform electric field cannot be applied to the cathode of the above-mentioned material, which may result in uneven formation of a part of the plating film (mask 100).

在實現UHD級別以上的超高畫質像素中,鍍膜及鍍膜圖案(遮罩圖案P)的不均勻,有可能對形成像素產生不好的影響。例如,目前QHD畫質的情況為500~600 PPI(pixel per inch),像素尺寸達到約30~50㎛,4K UHD、8K UHD高畫質的情況具有比前者高的~860 PPI、~1600 PPI等的解析度。直接適用於VR機器上的微顯示器或者插入到VR機器而使用的微顯示器以約2000 PPI以上級別的超高畫質為目標,像素的尺寸約為5~10㎛。FMM、陰影遮罩的圖案寬度可以形成為數μm至數十μm尺寸,優選小於30μm的尺寸,因此數μm尺寸的缺陷也是在遮罩的圖案尺寸中佔據很大比重程度的尺寸。另外,為了去除上述材料的陰極的缺陷,可以進行用於去除金屬氧化物、雜質等的附加工藝,該過程中有可能又引發陰極材料被蝕刻等的其他缺陷。In ultra-high-quality pixels that achieve UHD level or higher, the unevenness of the coating and the coating pattern (mask pattern P) may adversely affect the formation of pixels. For example, the current QHD image quality is 500~600 PPI (pixel per inch), the pixel size reaches about 30~50㎛, 4K UHD, 8K UHD high image quality has higher than the former ~860 PPI, ~1600 PPI Resolution. Directly applicable to micro-displays on VR machines or micro-displays used when plugged into VR machines, the ultra-high image quality of about 2000 PPI or higher is targeted, and the pixel size is about 5~10㎛. The pattern width of the FMM and the shadow mask can be formed to a size of several μm to several tens of μm, preferably a size smaller than 30 μm. Therefore, defects with a size of several μm also occupy a large proportion of the pattern size of the mask. In addition, in order to remove the defects of the cathode of the above-mentioned material, an additional process for removing metal oxides, impurities, etc. may be performed, and in this process, other defects such as etching of the cathode material may be caused.

因此,本發明可以使用單晶材料的母板(或者陰極)。特別是,優選為單晶矽材料。可以對單晶矽材料的母板進行1019 /cm3 以上的高濃度摻雜,以便具有導電性。摻雜可以對整個母板進行,也可以僅對母板的表面部分進行。Therefore, the present invention can use a mother substrate (or cathode) of single crystal material. In particular, it is preferably a single crystal silicon material. The mother board of single crystal silicon material can be doped with a high concentration of 10 19 /cm 3 or more in order to have conductivity. The doping may be performed on the entire mother board or only on the surface part of the mother board.

另外,單晶材料可使用Ti、Cu、Ag等金屬;GaN、SiC、GaAs、GaP、AlN、InN、InP、Ge等半導體;石墨(graphite)、石墨烯(graphene)等碳材料;包含CH3 NH3 PbCl3 、CH3 NH3 PbBr3 、CH3 NH3 PbI3 、SrTiO3 等之鈣鈦礦(perovskite)結構等超導電體用單晶陶瓷;飛行器零部件用單晶超耐熱合金等。金屬、碳材料基本上是導電性材料。半導體材料的情況,為了具有導電性,可執行1019 以上的高濃度摻雜。其他材料可藉由執行摻雜或形成氧空位(oxygen vacancy)等,藉以形成導電性。摻雜可對母板的整體上進行,亦可僅對母板的表面部分進行。In addition, single crystal materials can use metals such as Ti, Cu, Ag; GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge and other semiconductors; graphite (graphite), graphene (graphene) and other carbon materials; including CH 3 superconductor NH 3 PbCl 3, CH 3 NH 3 PbBr 3, CH 3 NH 3 PbI 3, SrTiO 3 , etc. perovskite (Transition of perovskite) single crystal ceramic structure; aircraft parts and the like with the single crystal superalloy. Metal and carbon materials are basically conductive materials. In the case of semiconductor materials, in order to have conductivity, a high concentration doping of 10 19 or more can be performed. Other materials can form conductivity by performing doping or forming oxygen vacancy. The doping may be performed on the entire motherboard or only on the surface portion of the motherboard.

單晶材料由於沒有缺陷,電鑄時在表面全部形成均勻的電場,因此生成均勻的鍍膜(遮罩100)。通過均勻鍍膜而製造的框架一體型遮罩100、200可以進一步改善OLED像素的畫質水準。並且,由於無需進行去除、消除缺陷的附加工藝,能夠降低工藝費用,並提高生産性。Since the single crystal material has no defects, a uniform electric field is formed on the entire surface during electroforming, so a uniform plating film (mask 100) is generated. The frame-integrated masks 100 and 200 manufactured by uniform coating can further improve the image quality of OLED pixels. Moreover, since there is no need to perform additional processes for removing and eliminating defects, it is possible to reduce process costs and improve productivity.

另外,若是藉由矽材料或藉由氧化(Oxidation)、氮化(Nitridation)可在表面形成絕緣薄膜之單晶材料,則具有根據需要只藉由母板的表面氧化、氮化過程就可以形成絕緣部的優點。絕緣部也可以使用光刻膠形成。在形成有絕緣部的部分中,防止鍍膜(遮罩100)的電沉積,並且在鍍膜上形成圖案(遮罩圖案P)。In addition, if it is a single crystal material that can form an insulating film on the surface by silicon material or by oxidation (Oxidation), nitridation (Nitridation), it can be formed only by the surface oxidation and nitridation process of the motherboard as needed Advantages of insulation. The insulating portion may be formed using photoresist. In the portion where the insulating portion is formed, electrodeposition of the plating film (mask 100) is prevented, and a pattern (mask pattern P) is formed on the plating film.

另外,本發明母板的材料只要在降低陰極的缺陷之範圍內,並不一定要局限於上述之單晶材料,特以明示。In addition, as long as the material of the mother board of the present invention is within the range of reducing the defects of the cathode, it is not necessarily limited to the above single crystal material, and it is specifically stated.

遮罩圖案P的寬度可以小於40μm,遮罩100的厚度可以約為2~50μm。由於框架200具備多個遮罩單元區域CR(CR11~CR56),因此也可以形成多個具有與各個遮罩單元區域CR(CR11~CR56)分別對應的遮罩單元C(C11~56)的遮罩100。The width of the mask pattern P may be less than 40 μm, and the thickness of the mask 100 may be about 2-50 μm. Since the frame 200 includes a plurality of mask unit regions CR (CR11 to CR56), a plurality of masks having mask units C (C11 to 56) corresponding to the respective mask unit regions CR (CR11 to CR56) may be formed. Hood 100.

參照圖8的(b),本發明可提供遮罩裝載部90。遮罩裝載部90可提供用於裝載遮罩100的空間,以使製得的遮罩100平坦地展開且向框架200移動之前,裝載到該空間內。遮罩裝載部90優選為平板形狀,以使遮罩100平坦地裝載到其內部。遮罩裝載部90可為尺寸大於遮罩100的大平板形狀,以使遮罩100整體上平坦地裝載。Referring to (b) of FIG. 8, the present invention can provide a mask loading portion 90. The mask loading part 90 may provide a space for loading the mask 100 so that the manufactured mask 100 is unfolded flat and loaded into the space before moving toward the frame 200. The mask loading part 90 is preferably in the shape of a flat plate, so that the mask 100 is flatly loaded inside. The mask loading part 90 may have a large flat plate shape with a size larger than that of the mask 100 so that the mask 100 as a whole is loaded flat.

為了在裝載遮罩100時或裝載遮罩100之後遮罩100上不生成皺紋而保持平坦的狀態,遮罩裝載部90可吸附遮罩100的一面。與遮罩100對應的遮罩裝載部90的一面上可形成有多個真空孔VH(vacuum hole),以使遮罩裝載部90吸附遮罩100的一面。遮罩裝載部90與外部的抽取手段(未圖示)連接,藉以可抽取遮罩裝載部90內部的空氣並向真空孔VH傳遞抽吸壓力。基於多個真空孔VH的抽吸壓力,遮罩100可全部被遮罩裝載部90吸附。In order to maintain the flat state without wrinkles on the mask 100 when the mask 100 is mounted or after the mask 100 is mounted, the mask mounting portion 90 may attract one side of the mask 100. A plurality of vacuum holes VH (vacuum holes) may be formed on one surface of the mask mounting portion 90 corresponding to the mask 100 so that the mask mounting portion 90 attracts the side of the mask 100. The mask loading part 90 is connected to an external extraction means (not shown), whereby the air inside the mask loading part 90 can be extracted and the suction pressure can be transmitted to the vacuum hole VH. Based on the suction pressure of the plurality of vacuum holes VH, the mask 100 can be completely attracted to the mask loading portion 90.

遮罩裝載部90的角部可形成有凹陷部91。若考慮四角形狀的遮罩裝載部90,4個角部可分別形成有凹陷部91。若遮罩100裝載到遮罩裝載部90上,則遮罩100的一部分會向凹陷部91的外側突出並露出。藉此,可以利用突出且露出的部分使遮罩100平坦地展開或者藉由夾持手段(未圖示)進行夾持。The corner portion of the mask loading portion 90 may be formed with a concave portion 91. Considering the quadrangular mask mounting portion 90, the four corners may be formed with recessed portions 91, respectively. When the mask 100 is mounted on the mask mounting portion 90, a part of the mask 100 protrudes and is exposed to the outside of the recessed portion 91. Thereby, the protruding and exposed portion can be used to spread the mask 100 flat or clamped by clamping means (not shown).

另外,遮罩裝載部90可以對鐳射L光不透明。藉此,本發明的遮罩裝載部90的特徵在於,其上形成有鐳射貫穿孔93,藉以能夠使從遮罩裝載部90的上部照射的鐳射L到達遮罩100的焊接部。In addition, the mask mount 90 may be opaque to laser L light. Accordingly, the mask mounting portion 90 of the present invention is characterized in that the laser through hole 93 is formed thereon, so that the laser light irradiated from the upper portion of the mask mounting portion 90 can reach the welding portion of the mask 100.

再次參照圖8的(b),鐳射貫穿孔93可與焊接部的位置及個數對應地形成於遮罩裝載部90。焊接部可以規定的間隔在遮罩100的邊緣或虛擬部DM的部分上佈置多個,因此鐳射貫穿孔93亦可以與其對應且相隔規定間隔地形成多個。作為一例,焊接部在遮罩100的兩側(左側/右側)虛擬部DM的部分以規定間隔佈置多個,因此鐳射貫穿孔93亦可以在遮罩裝載部90的兩側(左側/右側)以規定間隔形成多個。Referring again to FIG. 8( b ), the laser through hole 93 may be formed in the mask mounting portion 90 according to the position and the number of welded portions. A plurality of welded portions may be arranged on the edge of the mask 100 or a portion of the dummy portion DM at a predetermined interval. Therefore, a plurality of laser through holes 93 may be formed at a predetermined interval corresponding thereto. As an example, the welding part is arranged at predetermined intervals on the virtual parts DM on both sides (left/right) of the mask 100, so the laser through holes 93 may be on both sides (left/right) of the mask mounting part 90 A plurality is formed at predetermined intervals.

鐳射貫穿孔93並非一定與焊接部的位置及個數對應。例如,亦可以僅對鐳射貫穿孔93中的一部分照射鐳射L以進行焊接。而且,不與焊接部對應的鐳射貫穿孔93中的一部分亦可代替作為對與遮罩裝載部90的一面接觸的遮罩100施加真空抽吸壓力的通道之真空孔(vacuum hole)使用。而且,不與焊接部對應的鐳射貫穿孔93中的一部分在對準遮罩100與遮罩裝載部90時亦可代替對準標記(ALIGN MARK)而使用。若遮罩裝載部90的材料對鐳射L光透明,則亦可以不形成鐳射貫穿孔93。The laser through holes 93 do not necessarily correspond to the position and number of welded parts. For example, only a part of the laser penetration hole 93 may be irradiated with laser L to perform welding. In addition, a part of the laser through holes 93 that do not correspond to the welded portion may be used instead of a vacuum hole as a passage through which vacuum suction pressure is applied to the mask 100 in contact with one side of the mask mounting portion 90. In addition, a part of the laser through hole 93 that does not correspond to the welded portion may be used instead of the alignment mark (ALIGN MARK) when the mask 100 and the mask mounting portion 90 are aligned. If the material of the mask mount 90 is transparent to laser L light, the laser through hole 93 may not be formed.

遮罩裝載部90可以與移送部92連接。移送部92可以連接於與遮罩100接觸的遮罩裝載部90的一面相對的另一面。圖8的(b),為了穩定地支撑遮罩裝載部90,移送部92優選連接於遮罩裝載部90的下面。The mask loading unit 90 may be connected to the transfer unit 92. The transfer portion 92 may be connected to the other surface of the mask loading portion 90 that is in contact with the mask 100 and is opposite to the other surface. In FIG. 8( b ), in order to stably support the mask loading part 90, the transfer part 92 is preferably connected to the lower surface of the mask loading part 90.

移送部92上可以連接有導軌、傳送帶等移動手段(未圖示),藉以向X、Y、Z、θ軸移動。而且,移送部92上亦連接有用於翻轉(flip)遮罩裝載部90的旋轉軸等。或者,遮罩裝載部90的外殼與移送部92連通,且移送部92與外部的抽吸手段(未圖示)連接,將抽吸壓力施加到遮罩裝載部90內部,且將其傳遞到真空孔VH。The transfer unit 92 may be connected to a moving means (not shown) such as a guide rail and a conveyor belt to move to the X, Y, Z, and θ axes. In addition, a rotation shaft for flipping the mask mount 90 is also connected to the transfer unit 92. Alternatively, the housing of the mask loading part 90 communicates with the transfer part 92, and the transfer part 92 is connected to an external suction means (not shown) to apply suction pressure to the inside of the mask loading part 90 and transfer it to Vacuum hole VH.

下面說明在遮罩移送系統內對遮罩100進行處理的一系列過程。The following describes a series of processes for processing the mask 100 in the mask transfer system.

圖9是示出本發明之一實施例涉及的真空移送部60吸附遮罩100的狀態的概略圖。9 is a schematic diagram showing a state in which the vacuum transfer unit 60 according to an embodiment of the present invention sucks the mask 100.

參照圖9,真空移送部60可吸附遮罩100側。真空移送部60吸附遮罩100之後,向外拉遮罩100,藉以能夠使遮罩100平坦地展開。Referring to FIG. 9, the vacuum transfer unit 60 can attract the mask 100 side. After the vacuum transfer unit 60 sucks the mask 100, the mask 100 is pulled outward, so that the mask 100 can be spread out flatly.

制得的遮罩100可以平坦展開的狀態裝載於框架200上並進行黏合的工藝。此時,移動遮罩100的過程中,由於遮罩100是厚度為約2㎛~50㎛的薄膜,只要施加微小的力量就會産生皺紋,因此保管時要特別注意。另外,由於遮罩100上形成有細微的多個遮罩圖案P,因此為了不使遮罩圖案P的對準打亂,遮罩100應平坦地展開且不產生皺紋。為了使遮罩100以展開的狀態移動,若利用夾具夾住遮罩100的兩側面,則會使遮罩100受損傷,且因夾持遮罩100的兩側面而難以裝載到框架200上。此外,用夾具夾持遮罩100以使遮罩圖案P對準不發生錯誤且使遮罩100平坦地移動並裝載於框架200上亦非常困難。The manufactured mask 100 can be mounted on the frame 200 in a flat and unfolded state and bonded. At this time, during the movement of the mask 100, since the mask 100 is a thin film with a thickness of about 2㎛~50㎛, wrinkles may be generated when a slight force is applied, so special care should be taken during storage. In addition, since a plurality of fine mask patterns P are formed on the mask 100, in order not to disturb the alignment of the mask patterns P, the mask 100 should be spread out flat without wrinkles. In order to move the mask 100 in an unfolded state, if the two sides of the mask 100 are clamped with a jig, the mask 100 is damaged, and it is difficult to load the frame 200 by clamping the two sides of the mask 100. In addition, it is also very difficult to hold the mask 100 with a jig to align the mask pattern P without error, and to move the mask 100 flat and load it on the frame 200.

藉此,真空移送部60可對遮罩100側進行基於真空V的吸附。此時,基於真空V的吸附不是指將遮罩100周邊環境變為真空並進行吸附,而應理解為空氣沿著真空移送部60的內部氣流通道63向外抽排以産生吸附力,藉以使遮罩100吸附到真空移送部60上。With this, the vacuum transfer unit 60 can perform suction by the vacuum V on the side of the mask 100. At this time, the suction based on the vacuum V does not mean that the surrounding environment of the mask 100 is turned into a vacuum and is suctioned, but it should be understood that the air is drawn outward along the internal air flow channel 63 of the vacuum transfer part 60 to generate a suction force, so that The mask 100 is attracted to the vacuum transfer unit 60.

真空移送部60包括外殼61,外殼61的內部可提供有氣流通道63。外殼61的一端與遮罩100側接觸,另一端可與外部的抽取手段(未圖示)連接。泵等抽取手段(未圖示)從外殼61內部的氣流通道63抽取空氣,藉以使外殼61內部變為真空氣氛。藉此,與外殼61的一端接觸的遮罩100能夠被真空移送部60吸附。The vacuum transfer part 60 includes a housing 61, and an air flow path 63 may be provided inside the housing 61. One end of the housing 61 is in contact with the side of the cover 100, and the other end can be connected to an external extraction means (not shown). An extraction means (not shown) such as a pump extracts air from the airflow passage 63 inside the casing 61, thereby turning the inside of the casing 61 into a vacuum atmosphere. With this, the mask 100 in contact with one end of the housing 61 can be attracted by the vacuum transfer unit 60.

外殼61的一端可佈置有多孔部65。多孔部65可以由包括極小的孔隙(porous)的多孔性材質構成。若真空移送部60藉由孔(hole)或縫(slit)吸附遮罩100,則由於孔、縫的尺寸大且孔、縫的形成面積上的吸附力不均勻,會給遮罩100的一部分帶來壓力。因此,若對多孔部65的孔隙之間施加真空,則多孔部65表面將産生均勻的吸附力,藉以能夠穩定地吸附遮罩100並使其移動。A porous portion 65 may be arranged at one end of the housing 61. The porous portion 65 may be composed of a porous material including extremely small pores. If the vacuum transfer part 60 absorbs the mask 100 through a hole or a slit, the size of the hole and the slit is large and the adsorption force on the formation area of the hole and the slit is not uniform, which may give a part of the mask 100 Bring pressure. Therefore, if a vacuum is applied between the pores of the porous portion 65, a uniform adsorption force is generated on the surface of the porous portion 65, whereby the mask 100 can be stably adsorbed and moved.

真空移送部60可以吸附遮罩100的至少兩側。例如,可吸附遮罩100的左側與右側共兩側,亦可以吸附遮罩100的上下左右共4側。作為一例,圖9的(a)示出兩個真空移送部60吸附遮罩100的左側與右側以向左側與右側方向拉遮罩100的例子。作為另一例,圖9的(b)示出4個真空移送部60'吸附遮罩100的4個角部以向左側、右側、上側、下側方向拉遮罩100的例子。惟,並不限於此,真空移送部60的個數可基於遮罩100的拉拽方向、移動等而決定。真空移送部60上可以連接有使其向X、Y、Z、θ軸移動之導軌、傳送帶等移動手段(未圖示),藉以拉遮罩100或吸附遮罩100並使其移動。下面假定為圖8的(b)的形態以進行說明。The vacuum transfer part 60 can attract at least two sides of the mask 100. For example, the left side and the right side of the mask 100 can be attracted, and the top, bottom, left, and right sides of the mask 100 can also be attracted. As an example, FIG. 9( a) shows an example in which the two vacuum transfer sections 60 attract the left and right sides of the mask 100 to pull the mask 100 in the left and right directions. As another example, FIG. 9( b) shows an example in which the four vacuum transfer parts 60 ′ suck the four corners of the mask 100 to pull the mask 100 in the left, right, upper, and lower directions. However, it is not limited to this, and the number of vacuum transfer parts 60 may be determined based on the pulling direction, movement, and the like of the mask 100. The vacuum transfer unit 60 may be connected to a moving means (not shown) such as a guide rail or a conveyor belt that moves the X, Y, Z, and θ axes to pull the mask 100 or attract the mask 100 and move it. The following description assumes the form of (b) of FIG. 8.

圖10是示出本發明之一實施例涉及的遮罩移送系統的操作過程的概略圖。FIG. 10 is a schematic diagram showing an operation procedure of a mask transfer system according to an embodiment of the present invention.

參照圖10的(a),真空移送部60可吸附遮罩100並將其移動至遮罩裝載部90。遮罩100的4個角部被真空移送部60吸附且以平坦展開的狀態裝載到遮罩裝載部90上。或者,也可以在遮罩100裝載於遮罩裝載部90的狀態下,真空移送部60使遮罩100平坦地展開。Referring to (a) of FIG. 10, the vacuum transfer unit 60 can attract the mask 100 and move it to the mask loading unit 90. The four corners of the mask 100 are sucked by the vacuum transfer section 60 and loaded on the mask loading section 90 in a flatly spread state. Alternatively, the vacuum transfer unit 60 may flatten the mask 100 while the mask 100 is mounted on the mask mounting unit 90.

接著,在遮罩裝載部90上的真空孔VH向遮罩100施加抽吸壓力,以使遮罩100吸附到遮罩裝載部90上。或者,也可以在使遮罩100移動到遮罩裝載部90的過程中,真空移送部60在真空孔VH對遮罩100施加抽吸壓力。Next, the vacuum hole VH in the mask mount 90 applies suction pressure to the mask 100 to attract the mask 100 to the mask mount 90. Alternatively, the vacuum transfer unit 60 may apply suction pressure to the mask 100 through the vacuum hole VH while the mask 100 is moved to the mask mounting unit 90.

另外,在不使用真空移送部60情況下,例如也可以用夾具(未圖示)夾持遮罩100的角部並將其移動至遮罩裝載部90,之後使遮罩100展開的同時,在遮罩裝載部90的真空孔VH上施加抽吸壓力,藉以吸附遮罩100。遮罩裝載部90的角部由於形成有凹陷部91,因此即使夾具夾持遮罩100的角部兩側也不會幹擾遮罩裝載部90。In addition, when the vacuum transfer unit 60 is not used, for example, the corner of the mask 100 may be clamped with a jig (not shown) and moved to the mask mounting unit 90, and then the mask 100 may be unfolded at the same time. The suction pressure is applied to the vacuum hole VH of the mask mounting part 90, thereby attracting the mask 100. Since the corner portion of the mask mounting portion 90 is formed with a recessed portion 91, even if the jig clamps both sides of the corner portion of the mask 100, the mask mounting portion 90 will not be disturbed.

可以在遮罩100的焊接部與遮罩裝載部90的鐳射貫穿孔93對應的狀態下裝載於遮罩裝載部90上。若遮罩100裝載到遮罩裝載部90上,則至少遮罩100的角部會向凹陷部91的外側突出並露出。The mask mounting portion 90 may be mounted in a state where the welding portion of the mask 100 corresponds to the laser through hole 93 of the mask mounting portion 90. When the mask 100 is mounted on the mask mounting portion 90, at least the corners of the mask 100 will protrude out of the recessed portion 91 and be exposed.

然後,參照圖10的(b),可以使遮罩100翻轉(flip)。移送部92將遮罩裝載部90移動至框架200上且使遮罩裝載部90翻轉。因此,吸附到遮罩裝載部90上的遮罩100也會被翻轉。或者,移送部92可以在使遮罩裝載部90翻轉的狀態下,將遮罩裝載部90移動至框架200上。可以保持在遮罩裝載部90的真空孔VH施加到遮罩100上的抽吸壓力,藉以即使遮罩100被翻轉,遮罩裝載部90上的對準狀態仍不被打亂且能夠密接。Then, referring to (b) of FIG. 10, the mask 100 can be flipped. The transfer section 92 moves the mask loading section 90 onto the frame 200 and reverses the mask loading section 90. Therefore, the mask 100 attracted to the mask mount 90 is also reversed. Alternatively, the transfer unit 92 may move the mask loading unit 90 onto the frame 200 with the mask loading unit 90 turned over. The suction pressure applied to the mask 100 by the vacuum hole VH of the mask mount 90 can be maintained, so that even if the mask 100 is turned over, the alignment state on the mask mount 90 is not disturbed and can be in close contact.

接著,遮罩100可以吸附並支撐於遮罩裝載部90的狀態移送至框架200區域。Then, the mask 100 can be transferred to the frame 200 area while being sucked and supported by the mask loading portion 90.

以下,對使遮罩100與框架200對應並對準後進行黏合的一系列過程進行說明。Hereinafter, a series of processes in which the mask 100 corresponds to the frame 200 and is aligned and bonded will be described.

圖11是示出本發明之一實施例涉及的將遮罩裝載部90裝載於框架上使遮罩100與框架200的單元區域CR對應的狀態的概略圖。FIG. 11 is a schematic diagram showing a state in which the mask loading unit 90 is mounted on the frame so that the mask 100 corresponds to the unit region CR of the frame 200 according to an embodiment of the present invention.

然後,參照圖11的(a)及(b),可以將遮罩100對應於框架200的一個遮罩單元區域CR。可藉由將吸附並支撐有遮罩100的遮罩裝載部90裝載於框架200[或者遮罩單元片材部220]上,使遮罩100與遮罩單元區域CR對應。將遮罩裝載部90裝載於框架200之前,利用移送部92控制遮罩裝載部90與遮罩100的位置,藉以在遮罩單元區域CR對準遮罩100。由於遮罩裝載部90翻轉成使遮罩100朝向下方,因此若遮罩裝載部90被裝載於框架200[或者遮罩單元片材部220]上,則遮罩100將佈置到遮罩裝載部90與框架200[或者遮罩單元片材部220]之間,同時用遮罩裝載部90擠壓。Then, referring to (a) and (b) of FIG. 11, the mask 100 may correspond to one mask unit region CR of the frame 200. The mask mounting portion 90 that adsorbs and supports the mask 100 can be mounted on the frame 200 [or the mask unit sheet portion 220 ], so that the mask 100 corresponds to the mask unit area CR. Before the mask loading unit 90 is mounted on the frame 200, the position of the mask loading unit 90 and the mask 100 is controlled by the transfer unit 92, thereby aligning the mask 100 in the mask unit region CR. Since the mask loading part 90 is turned so that the mask 100 faces downward, if the mask loading part 90 is loaded on the frame 200 [or the mask unit sheet part 220], the mask 100 will be arranged to the mask loading part Between the frame 90 and the frame 200 [or the mask unit sheet part 220], the mask loading part 90 is pressed at the same time.

另一方面,亦可以在框架200下部佈置下部支撑體70。下部支撑體70具有可進入框架邊緣部210的中空區域R內部的尺寸且具有平坦的形狀。而且,下部支撑體70的上面亦可形成有與遮罩單元片材部220的形狀對應的規定支撐槽(未圖示)。此時,邊緣片材部221、第一柵格片材部223及第二柵格片材部225插入支撐槽內,藉以使遮罩單元片材部220更好地固定。On the other hand, the lower support 70 may also be arranged below the frame 200. The lower support 70 has a size that can enter the inside of the hollow region R of the frame edge portion 210 and has a flat shape. Furthermore, a predetermined support groove (not shown) corresponding to the shape of the mask unit sheet portion 220 may be formed on the upper surface of the lower support 70. At this time, the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 are inserted into the support grooves, so that the mask unit sheet portion 220 is better fixed.

下部支撑體70可擠壓與遮罩100接觸的遮罩單元區域CR的相反面。即,下部支撑體70沿上部方向支撑遮罩單元片材部220,藉以防止遮罩100的黏合過程中遮罩單元片材部220向下部下垂。同時,下部支撑體70與遮罩裝載部90以相互相反的方向擠壓遮罩100的邊緣部分及框架200[或者遮罩單元片材部220],故不會破壞遮罩100的對準狀態並使其保持對準。The lower support 70 may press the opposite surface of the mask unit region CR that is in contact with the mask 100. That is, the lower support 70 supports the mask unit sheet portion 220 in the upper direction, thereby preventing the mask unit sheet portion 220 from sagging downward when the mask 100 is bonded. At the same time, the lower support 70 and the mask mounting portion 90 press the edge portion of the mask 100 and the frame 200 [or the mask unit sheet portion 220] in opposite directions, so the alignment state of the mask 100 is not destroyed And keep it aligned.

如此,僅藉由遮罩裝載部90上附著遮罩100且將遮罩裝載部90裝載於框架200上就可以完成使遮罩100與框架200的遮罩單元區域CR對應的過程,此過程對遮罩100不施加任何拉伸力。In this way, only by attaching the mask 100 to the mask loading part 90 and loading the mask loading part 90 on the frame 200 can the process of matching the mask 100 and the mask unit region CR of the frame 200 be completed. The mask 100 does not apply any stretching force.

接著,向遮罩100照射鐳射L,以使遮罩100藉由鐳射焊接黏合於框架200。鐳射L可透過遮罩裝載部90的鐳射貫穿孔93照射到遮罩100的焊接部。遮罩100的焊接部可以是指照射鐳射L以形成焊接焊珠WB的目標區域。焊接部可相當於遮罩100的邊緣或者虛擬部DM部分中的至少一部分區域。被鐳射焊接的遮罩的焊接部部分生成焊接焊珠WB,焊接焊珠WB可具有與遮罩100/框架200相同的材料且與遮罩100/框架200連接成一體。Next, the mask 100 is irradiated with laser light L, so that the mask 100 is bonded to the frame 200 by laser welding. The laser L can be irradiated to the welding portion of the mask 100 through the laser through hole 93 of the mask mounting portion 90. The welding portion of the mask 100 may refer to a target area where the laser L is irradiated to form a welding bead WB. The welded portion may correspond to an edge of the mask 100 or at least a part of the DM portion of the dummy portion. The welding portion of the mask welded by the laser generates a welding bead WB. The welding bead WB may have the same material as the mask 100/frame 200 and be integrated with the mask 100/frame 200.

再次參照圖11,由於框架200的遮罩單元片材部220具有薄的厚度,在對遮罩100施加拉伸力的狀態下,黏合於遮罩單元片材部220時,遮罩100中殘存的拉伸力作用於遮罩單元片材部220以及遮罩單元區域CR,也有可能使它們變形。因此,應該在對遮罩100不施加拉伸力的狀態下,將遮罩100黏合於遮罩單元片材部220。由此,可以防止因施加到遮罩100的拉伸力作為張力(tension)反向作用於框架200而導致框架200(或者遮罩單元片材部220)變形。Referring again to FIG. 11, since the mask unit sheet portion 220 of the frame 200 has a thin thickness, when the mask unit 100 is adhered to the mask unit sheet portion 220 with a tensile force applied thereto, the mask 100 remains in the mask 100 Of tensile force acts on the mask unit sheet portion 220 and the mask unit region CR, and they may be deformed. Therefore, the mask 100 should be adhered to the mask unit sheet portion 220 in a state where no stretching force is applied to the mask 100. Thereby, it is possible to prevent the frame 200 (or the mask unit sheet portion 220) from being deformed due to the tensile force applied to the mask 100 acting on the frame 200 as a tension in reverse.

只是,在對遮罩100不施加拉伸力的狀態下,將其黏合於框架200(或者遮罩單元片材部220),以製造框架一體型遮罩,並將這個框架一體型遮罩應用於像素沉積工藝時,有可能發生一個問題。在約25~45℃的溫度下進行的像素沉積工藝中,遮罩100以預定長度熱膨脹。即使是恆範鋼材料的遮罩100,隨著提升用於形成像素沉積工藝環境的溫度10℃左右,會發生約1~3ppm的長度變化。例如,當遮罩100的總長度為500mm時,長度會增加約5~15μm。如此,遮罩100因自重而下垂或者在固定於框架200的狀態下拉長而引起扭曲等變形,同時圖案P的對準誤差變大。However, the mask 100 is adhered to the frame 200 (or the mask unit sheet portion 220) in a state where no tensile force is applied to manufacture a frame-integrated mask, and the frame-integrated mask is applied During the pixel deposition process, a problem may occur. In the pixel deposition process performed at a temperature of about 25 to 45° C., the mask 100 thermally expands by a predetermined length. Even for the mask 100 of Hengfan steel material, as the temperature for forming the pixel deposition process environment is increased by about 10°C, a length change of about 1 to 3 ppm will occur. For example, when the total length of the mask 100 is 500 mm, the length will increase by about 5-15 μm. In this way, the mask 100 sags due to its own weight or is pulled down while being fixed to the frame 200 to cause distortion such as twisting, and at the same time, the alignment error of the pattern P becomes large.

因此,本發明的特徵在於,在不是常溫,而是比常溫更高的溫度下,對遮罩100不施加拉伸力的狀態下,使其與框架200的遮罩單元區域CR對應並黏合。本說明書中表達為將工藝區域的溫度提升至第一溫度ET之後,使遮罩100與框架200對應。Therefore, the present invention is characterized in that, at a temperature higher than normal temperature rather than normal temperature, the mask 100 corresponds to and adheres to the mask unit region CR of the frame 200 in a state where no tensile force is applied to the mask 100. In this specification, it is expressed that after raising the temperature of the process area to the first temperature ET, the mask 100 corresponds to the frame 200.

“工藝區域”是指佈置有遮罩100、框架200等構成要素並且進行遮罩100的黏合工藝等的空間。工藝區域可以是密閉的腔室內的空間,也可以是開放的空間。還可以僅指執行將遮罩100黏合於框架200上的工藝的作業臺部(未圖示)的周邊空間。另外,“第一溫度”可以是指將框架一體型遮罩使用於OLED像素沉積工藝時,高於或者等於像素沉積工藝的溫度。考慮到像素沉積工藝溫度約為25~45℃,第一溫度可以是約25℃至60℃。工藝區域的溫度上升可以通過在腔室內設置加熱裝置,或者工藝區域周圍設置加熱裝置的方法等進行。The “process area” refers to a space in which components such as the mask 100 and the frame 200 are arranged and the bonding process of the mask 100 is performed. The process area can be a space in a closed chamber or an open space. It may also refer to only the peripheral space of the workbench portion (not shown) that performs the process of bonding the mask 100 to the frame 200. In addition, the “first temperature” may refer to a temperature higher than or equal to the temperature of the pixel deposition process when the frame-integrated mask is used in the OLED pixel deposition process. Considering that the temperature of the pixel deposition process is about 25~45°C, the first temperature may be about 25°C to 60°C. The temperature of the process area can be increased by installing a heating device in the chamber or a heating device around the process area.

再次參照圖11,將包含有框架200的工藝區域的溫度提升至第一溫度ET之後,可以使遮罩100與遮罩單元區域CR對應。或者,使遮罩100與遮罩單元區域CR對應之後,將包含有框架200的工藝區域的溫度提升至第一溫度ET。或者,雖然圖式中僅僅示出了將一個遮罩100與一個遮罩單元區域CR對應,但也可以使各遮罩100分別對應各個遮罩單元區域CR之後,將工藝區域的溫度提升至第一溫度ET。Referring again to FIG. 11, after raising the temperature of the process area including the frame 200 to the first temperature ET, the mask 100 may correspond to the mask unit area CR. Alternatively, after the mask 100 corresponds to the mask unit area CR, the temperature of the process area including the frame 200 is raised to the first temperature ET. Alternatively, although only one mask 100 and one mask unit region CR are shown in the drawing, it is also possible to make each mask 100 correspond to each mask unit region CR, and then raise the temperature of the process area to the first One temperature ET.

現有的圖1的遮罩10包括6個單元C1~C6,因此具有較長的長度,而本發明的遮罩100包括一個單元C,因此具有較短的長度,因此PPA(pixel position accuracy)扭曲的程度會變小。假設包括多個單元C1~C6、…的遮罩10的長度為1m,並且在1m的總長度中發生10μm的PPA誤差,則本發明的遮罩100可以隨著相對長度減小(相當於單元C數量減少)而使上述誤差範圍1/n。例如,本發明的遮罩100長度為100mm,則具有從現有的遮罩10的1m減小為1/10的長度,因此在100mm的總長度中發生1μm的PPA誤差,使對準誤差顯著下降。The existing mask 10 of FIG. 1 includes six cells C1 to C6, and thus has a long length, and the mask 100 of the present invention includes one cell C, and thus has a short length, so PPA (pixel position accuracy) is distorted The degree will become smaller. Assuming that the length of the mask 10 including a plurality of cells C1 to C6, is 1 m, and a PPA error of 10 μm occurs in the total length of 1 m, the mask 100 of the present invention can be reduced with the relative length (equivalent to a cell The number of C decreases) and the above error range is 1/n. For example, the length of the mask 100 of the present invention is 100 mm, it has a length reduced from 1 m of the existing mask 10 to 1/10, so a PPA error of 1 μm occurs in the total length of 100 mm, which significantly reduces the alignment error .

另一方面,遮罩100具備多個單元C,若即使各個單元C與框架200的各個單元區域CR對應, 對準誤差仍處於最小化範圍內,則遮罩100也可以與框架200的多個遮罩單元區域CR對應。或者,具有多個單元C的遮罩100也可以與一個遮罩單元區域CR對應。在這種情況下,考慮到基於對準的工藝時間和生産性,遮罩100優選具備盡可能少量的單元C。On the other hand, the mask 100 includes a plurality of cells C, and even if each cell C corresponds to each cell region CR of the frame 200, the alignment error is still within a minimum range, the mask 100 may also be The mask unit area CR corresponds. Alternatively, the mask 100 having a plurality of cells C may correspond to one mask cell region CR. In this case, considering the process time and productivity based on the alignment, the mask 100 is preferably provided with as few cells C as possible.

在本發明中,由於只需匹配遮罩100的一個單元C並確認對準狀態即可,因此與同時匹配多個單元C(C1~C6)並需要確認全部對準狀態的現有方法相比,可以顯著縮短製造時間。In the present invention, since it is only necessary to match one unit C of the mask 100 and confirm the alignment state, compared with the existing method of simultaneously matching a plurality of units C (C1 to C6) and needing to confirm all alignment states, Can significantly reduce manufacturing time.

即,本發明的框架一體型遮罩的製造方法與現有方法相比,能夠明顯縮短時間,該現有方法通過使包含於6個遮罩100的各個單元C11~C16分別與一個單元區域CR11~CR16對應並確認各個對準狀態的6次過程,同時匹配6個單元C1~C6,並且需要同時確認6個單元C1~C6的對準狀態。That is, the manufacturing method of the frame-integrated mask of the present invention can significantly shorten the time compared with the conventional method. In the conventional method, the cells C11 to C16 included in the six masks 100 are respectively connected to one cell region CR11 to CR16 6 processes corresponding to and confirming each alignment state, matching 6 cells C1~C6 at the same time, and it is necessary to confirm the alignment state of 6 cells C1~C6 at the same time.

另外,在本發明的框架一體型遮罩的製造方法中,使30個遮罩100分別與30個單元區域CR(CR11~CR56)對應並對準的30次的過程中的產品產率,會明顯高於使分別包括6個單元C1~C6的5個遮罩10(參照圖2的(a))與框架20對應並對準的5次過程中的現有產品的產率。由於在每次對應於6個單元C的區域中對準6個單元C1~C6的現有方法是明顯繁瑣 、困難的作業,因此産品産率低。In addition, in the manufacturing method of the frame-integrated mask of the present invention, the product yield in the process of making 30 masks 100 corresponding to and aligning 30 unit regions CR (CR11 to CR56) with 30 times respectively, will It is significantly higher than the yield of the existing product in the process of five times of aligning and aligning the five masks 10 (refer to (a) of FIG. 2) including the six cells C1 to C6 with the frame 20 respectively. Since the existing method of aligning 6 cells C1 to C6 in the area corresponding to 6 cells C at a time is obviously cumbersome and difficult work, the product yield is low.

另一方面,使遮罩100與框架200對應後,也可以在框架200上用規定的黏合劑臨時固定遮罩100。然後,可以進行遮罩100的黏合步驟。On the other hand, after matching the mask 100 to the frame 200, the mask 100 may be temporarily fixed to the frame 200 with a predetermined adhesive. Then, the bonding step of the mask 100 may be performed.

而且,根據一實施例,使遮罩100與框架200對應之前,可以對遮罩100進行預熱以使其溫度達到高於第一溫度。再次參照圖8的(b),遮罩裝載部90還可以包括加熱部95。圖10的(a)步驟中,將遮罩100裝載於遮罩裝載部90上時,遮罩裝載部90的加熱部95將遮罩100預熱到高於第一溫度的溫度,例如能夠將遮罩100預熱到比第一溫度高約3℃至10℃的溫度。Moreover, according to an embodiment, before the mask 100 corresponds to the frame 200, the mask 100 may be preheated to make its temperature higher than the first temperature. Referring again to FIG. 8( b ), the mask loading part 90 may further include a heating part 95. In step (a) of FIG. 10, when the mask 100 is mounted on the mask mounting part 90, the heating part 95 of the mask mounting part 90 preheats the mask 100 to a temperature higher than the first temperature, for example, The mask 100 is preheated to a temperature about 3°C to 10°C higher than the first temperature.

將遮罩100馬上提升至第一溫度的同時,將其與框架200對應時,平坦狀態的遮罩100被拉伸且其表面産生nm或㎛級別的細微的皺紋、彎曲等,因此將遮罩100黏合於框架200上之前很難進行對準,即使進行對準後再將遮罩100黏合到框架200上,遮罩圖案P、單元C間亦存在產生對準誤差的可能性。Immediately raising the mask 100 to the first temperature and corresponding it to the frame 200, the flat mask 100 is stretched and its surface has minute wrinkles, bends, etc. of nm or ㎛ level, so the mask It is difficult to perform alignment before the 100 is adhered to the frame 200. Even if the mask 100 is adhered to the frame 200 after the alignment, there may be an alignment error between the mask pattern P and the unit C.

藉此,若在遮罩裝載部90預熱遮罩100之後,在遮罩100接觸框架200之前停止加熱部95的工作,則遮罩100以被吸附支撐於遮罩裝載部90的狀態接觸於框架200時,或在進入第一溫度的工藝區域時,遮罩100下降約3℃至10℃變為第一溫度的同時,遮罩100因預定收縮而會受到收縮的張力(tension)。With this, if the operation of the heating unit 95 is stopped before the mask mounting unit 90 warms up the mask 100 and before the mask 100 contacts the frame 200, the mask 100 is contacted with the mask mounting unit 90 while being adsorbed and supported When the frame 200, or when entering the process area of the first temperature, the mask 100 is lowered by about 3°C to 10°C to become the first temperature, and the mask 100 is subjected to contraction tension due to a predetermined contraction.

由於此,遮罩100上不産生皺紋、彎曲等而保持平坦展開的狀態。由於溫度小幅下降約3℃至10℃左右,因此遮罩100的變形程度不會影響到遮罩圖案P、單元C的對準,而只發生僅使遮罩100平坦地展開之收縮。Due to this, the mask 100 is kept flat and unfolded without wrinkles, bends, or the like. Since the temperature drops slightly by about 3°C to about 10°C, the degree of deformation of the mask 100 does not affect the alignment of the mask pattern P and the cell C, and only contraction that only spreads the mask 100 flatly occurs.

然後,可以使平坦展開的遮罩100與框架200完整地對準。接著,可以使遮罩100的邊緣的至少一部分黏合到框架200上。黏合優選可藉由鐳射焊接進行。應當最大限度地接近框架200的角部側進行鐳射焊接,才能最大限度地減少框架200和遮罩100之間的翹起空間,並提升黏著性。已被鐳射焊接的遮罩的焊接部部分生成焊接焊珠WB,且焊接焊珠WB具有與遮罩100/框架200相同的材料,並可與遮罩100/框架200連接成一體。Then, the flat spread mask 100 and the frame 200 can be completely aligned. Next, at least a part of the edge of the mask 100 may be adhered to the frame 200. The bonding can preferably be performed by laser welding. Laser welding should be performed as close as possible to the corner side of the frame 200 in order to minimize the warping space between the frame 200 and the cover 100 and improve the adhesion. The welding part of the mask that has been laser-welded generates welding beads WB, and the welding beads WB have the same material as the mask 100/frame 200 and can be integrally connected with the mask 100/frame 200.

本發明可以在不對遮罩100施加拉伸力的狀態下,將其焊接到遮罩單元片材部220上,因此不對遮罩單元片材部220[或者邊緣片材部221、第一柵格片材部223、第二柵格片材部225]施加張力。The present invention can weld the mask unit sheet portion 220 without applying tensile force to the mask 100, so the mask unit sheet portion 220 [or the edge sheet portion 221, the first grid The sheet portion 223 and the second grid sheet portion 225] apply tension.

圖12是示出本發明之一實施例涉及的將遮罩100依序黏合於單元區域CR上的過程的概略圖。FIG. 12 is a schematic diagram showing a process of sequentially bonding the mask 100 to the cell region CR according to an embodiment of the present invention.

將一個遮罩100黏合於框架200之後,可以重複使剩餘遮罩100依序與剩餘遮罩單元C對應並且黏合於框架200的過程。在使剩餘的遮罩100依序與剩餘遮罩單元C對應並進行黏合的過程中,可以將工藝區域的溫度控制在第一溫度、第二溫度。由於已經黏合到框架200的遮罩100可以提供基準位置,因此能夠顯著縮短使剩餘遮罩100依序與單元區域CR對應並且確認對準狀態的過程中的時間。並且,黏合於一個遮罩單元區域的遮罩100和黏合於相鄰的遮罩單元區域的遮罩100之間的PPA(pixel position accuracy)不超過3μm,故能夠提供對準精確的超高清OLED像素形成用遮罩。After one mask 100 is adhered to the frame 200, the process of making the remaining mask 100 correspond to the remaining mask units C in sequence and adhere to the frame 200 may be repeated. In the process of making the remaining masks 100 correspond to the remaining mask units C in sequence and bonding, the temperature of the process area can be controlled at the first temperature and the second temperature. Since the mask 100 that has been bonded to the frame 200 can provide a reference position, it is possible to significantly shorten the time in the process of sequentially associating the remaining masks 100 with the cell regions CR and confirming the alignment state. Moreover, the PPA (pixel position accuracy) between the mask 100 adhered to one mask unit area and the mask 100 adhered to the adjacent mask unit area does not exceed 3 μm, so it can provide ultra-high-definition OLEDs with accurate alignment A mask for pixel formation.

圖13是示出本發明一實施例涉及之將遮罩100黏合於框架200的單元區域CR後降低工藝區域的溫度LT的過程的概略圖。FIG. 13 is a schematic diagram showing a process of lowering the temperature LT of the process area after bonding the mask 100 to the unit area CR of the frame 200 according to an embodiment of the present invention.

然後參照圖13,可以將工藝區域的溫度降低至第二溫度LT。“第二溫度”是指比第一溫度更低的溫度。考慮到第一溫度為約25℃至60℃,以低於第一溫度為前提,第二溫度可以為約20℃至30℃,優選地,第二溫度可以為常溫。工藝區域的溫度降低可以藉由在腔室中設置冷卻裝置、在工藝區域周邊設置冷卻裝置方法、常溫自然冷卻的方法等進行。Then referring to FIG. 13, the temperature of the process area may be reduced to the second temperature LT. "Second temperature" refers to a temperature lower than the first temperature. Considering that the first temperature is about 25°C to 60°C, and on the premise of being lower than the first temperature, the second temperature may be about 20°C to 30°C, preferably, the second temperature may be normal temperature. The temperature of the process area can be reduced by installing a cooling device in the chamber, a cooling device around the process area, or a natural cooling method at room temperature.

當將工藝區域的溫度降低至第二溫度LT時,遮罩100可以以規定長度進行熱收縮。遮罩100可以沿著所有側面方向等方性(Isotrope)熱收縮。但是,由於遮罩100以焊接方式固定連接到框架200[或者遮罩單元片材部220],因此遮罩100的熱收縮自發地對周圍的遮罩單元片材部220施加張力TS。由於遮罩100自發地施加張力,遮罩100可以更加緊密地黏合於框架200上。When the temperature of the process area is reduced to the second temperature LT, the mask 100 may be thermally contracted by a prescribed length. The mask 100 can be thermally contracted isotropically along all lateral directions. However, since the mask 100 is fixedly connected to the frame 200 [or the mask unit sheet portion 220] by welding, the thermal shrinkage of the mask 100 spontaneously applies tension TS to the surrounding mask unit sheet portion 220. Since the mask 100 spontaneously applies tension, the mask 100 can be more closely adhered to the frame 200.

另外,各個遮罩100全部黏合於對應的遮罩單元區域CR後,工藝區域的溫度降低至第二溫度LT,因此同時引起所有遮罩100的熱收縮,從而可以防止框架200發生變形或者圖案P的對準誤差變大的問題。更具體而言,即使張力TS施加於遮罩單元片材部220,多個遮罩100沿著相反方向施加張力TS,因此抵消該力量,在遮罩單元片材部220不發生變形。例如,在附著於CR11單元區域的遮罩100與附著於CR12單元區域的遮罩100之間的第一柵格片材部223中,向附著於CR11單元區域的遮罩100的右側方向作用的張力TS與向附著於CR12單元區域的遮罩100的左側方向作用的張力TS相互抵消。由此,最大限度地降低基於張力TS的框架200[或者遮罩單元片材部220]的變形,從而能夠最大限度地降低遮罩100[或者遮罩圖案P]的對準誤差。In addition, after all the masks 100 are all bonded to the corresponding mask unit area CR, the temperature of the process area is reduced to the second temperature LT, so that all the masks 100 are thermally contracted at the same time, thereby preventing the frame 200 from being deformed or the pattern P The alignment error becomes larger. More specifically, even if the tension TS is applied to the mask unit sheet portion 220, the plurality of masks 100 apply the tension TS in the opposite direction, so that the force is offset, and the mask unit sheet portion 220 is not deformed. For example, in the first grid sheet portion 223 between the mask 100 attached to the CR11 unit area and the mask 100 attached to the CR12 unit area, the first grid sheet portion 223 acts on the right side of the mask 100 attached to the CR11 unit area The tension TS and the tension TS acting in the left direction of the mask 100 attached to the CR12 cell area cancel each other. Thereby, the deformation of the frame 200 [or the mask unit sheet portion 220] based on the tension TS is minimized, and the alignment error of the mask 100 [or mask pattern P] can be minimized.

圖14是示出本發明之一實施例涉及之利用框架一體型遮罩100、200的OLED像素沉積裝置1000的概略圖。FIG. 14 is a schematic diagram showing an OLED pixel deposition apparatus 1000 using frame-integrated masks 100 and 200 according to an embodiment of the present invention.

參照圖14,OLED像素沉積裝置1000包括:磁板300,其容納有磁體310,並且排布有冷却水管350;沉積源供給部500,其從磁板300的下部供給有機物源600。Referring to FIG. 14, the OLED pixel deposition apparatus 1000 includes: a magnetic plate 300 which houses a magnet 310 and cooling water pipes 350 are arranged; and a deposition source supply part 500 which supplies an organic matter source 600 from the lower part of the magnetic plate 300.

磁板300與沉積源供給部500之間可以插入有用於沉積有機物源600的玻璃等目標基板900。目標基板900上可以以緊貼或非常接近的方式配置有使有機物源600按不同像素沉積的框架一體型遮罩100、200[或者FMM]。磁體310可以産生磁場,並藉由磁場緊貼到目標基板900上。A target substrate 900 such as glass for depositing the organic matter source 600 may be interposed between the magnetic plate 300 and the deposition source supply part 500. The target substrate 900 may be provided with frame-integrated masks 100, 200 [or FMM] for depositing the organic matter source 600 in different pixels in a close or very close manner. The magnet 310 can generate a magnetic field and adhere to the target substrate 900 by the magnetic field.

沉積源供給部500可以往返左右路徑並供給有機物源600,由沉積源供給部500供給的有機物源600可以通過形成於框架一體型遮罩100、200的圖案P並沉積於目標基板900的一側。通過框架一體型遮罩100、200的圖案P後之被沉積的有機物源600,可以用作OLED的像素700。The deposition source supply part 500 can travel back and forth and supply the organic matter source 600, and the organic source 600 supplied by the deposition source supply part 500 can be deposited on one side of the target substrate 900 through the pattern P formed on the frame-integrated masks 100, 200 . The organic matter source 600 deposited after the pattern P of the frame-integrated masks 100 and 200 can be used as the pixel 700 of the OLED.

為了防止由於陰影效應(Shadow Effect)發生的像素700的不均勻沉積,框架一體型遮罩100、200的圖案可以傾斜地形成S[或者以錐形S形成]。沿著傾斜表面,在對角綫方向上通過圖案的有機物源600,也可以有助於像素700的形成,因此,能夠整體上厚度均勻地沉積像素700。In order to prevent uneven deposition of the pixel 700 due to the shadow effect, the pattern of the frame-integrated masks 100, 200 may be formed obliquely [or formed in a tapered S]. The organic matter source 600 passing the pattern in the diagonal direction along the inclined surface can also contribute to the formation of the pixel 700, and therefore, the pixel 700 can be deposited with a uniform thickness as a whole.

在高於像素沉積工藝溫度的第一溫度下,遮罩100黏合固定於框架200,因此即使提升至用於沉積像素工藝的溫度,也對遮罩圖案P的位置幾乎不構成影響,遮罩100和相鄰的遮罩100之間的PPA能夠保持為不超過3μm。At a first temperature that is higher than the temperature of the pixel deposition process, the mask 100 is adhered and fixed to the frame 200, so even if it is raised to the temperature used for the pixel deposition process, it hardly affects the position of the mask pattern P. The mask 100 The PPA with the adjacent mask 100 can be maintained to not exceed 3 μm.

如上所述,本發明列舉了優選實施例進行圖示和說明,但是不限於上述實施例,在不脫離本發明的精神的範圍內,該技術領域中具有通常知識者能夠進行各種變形和變更。這種變形及變更均落在本發明和所附的申請專利範圍的範圍內。As described above, the present invention lists preferred embodiments for illustration and description, but it is not limited to the above-mentioned embodiments, and various modifications and changes can be made by those having ordinary knowledge in the technical field without departing from the spirit of the present invention. Such modifications and changes fall within the scope of the present invention and the attached patent application.

10:遮罩 11:遮罩膜 20:框架 60、60’:真空移送部 61:外殼 63:氣流通道 65:多孔部 70:下部支撐體 90:遮罩裝載部 91:凹陷部 92:移送部 93:鐳射貫穿孔 95:加熱部 100:遮罩 110:遮罩膜 200:框架 210:邊緣框架部 220、220’:遮罩單元片材部 221:邊緣片材部 223:第一柵格片材部 225:第二柵格片材部 300:磁板 310:磁體 350:冷卻水管 500:沉積源供給部 600:有機物源 700:像素 900:目標基板 1000:OLED像素沉積裝置 C、C1~C6、C11~56:單元、遮罩單元 CR、CR11~CR56:遮罩單元區域 D1~D1''、D2~D2'':距離 DM:虛設部、遮罩虛設部 ET:將工藝區域的溫度提升至第一溫度 F1~F2:拉伸 L:鐳射 LT:將工藝區域的溫度降低至第二溫度 R:邊緣框架部的中空區域 P:遮罩圖案 TS:張力 V:真空 VH:真空孔 W:焊接 WB:焊接焊珠10: Mask 11: Mask film 20: Frame 60, 60’: Vacuum transfer section 61: Shell 63: Airflow channel 65: porous part 70: lower support 90: mask loading section 91: Depression 92: Transfer Department 93: Laser through hole 95: Heating Department 100: mask 110: mask film 200: frame 210: Edge frame part 220, 220’: Sheet unit of mask unit 221: Edge sheet section 223: First grid sheet section 225: Second grid sheet section 300: magnetic board 310: magnet 350: cooling water pipe 500: deposition source supply department 600: Organic source 700: pixels 900: target substrate 1000: OLED pixel deposition device C, C1~C6, C11~56: unit, mask unit CR, CR11~CR56: mask unit area D1~D1'', D2~D2'': distance DM: Dummy Department, Mask Dummy Department ET: Raise the temperature of the process area to the first temperature F1~F2: Stretch L: Laser LT: Reduce the temperature of the process area to the second temperature R: Hollow area of the edge frame P: Mask pattern TS: Tension V: Vacuum VH: vacuum hole W: welding WB: Welding welding beads

圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.

圖2是示出將現有的遮罩黏合於框架的過程的概略圖。FIG. 2 is a schematic diagram showing a process of bonding a conventional mask to a frame.

圖3是示出在現有的拉伸遮罩的過程中,發生單元之間的對準誤差的概略圖。FIG. 3 is a schematic diagram showing that an alignment error between cells occurs during a conventional stretching mask.

圖4是示出本發明之一實施例涉及之框架一體型遮罩的主視圖及側截面圖。4 is a front view and a side sectional view showing a frame-integrated mask according to an embodiment of the present invention.

圖5是示出本發明之一實施例涉及之框架的主視圖以及側截面圖。5 is a front view and a side sectional view showing a frame according to an embodiment of the present invention.

圖6是示出本發明之一實施例涉及之框架製造過程的概略圖。6 is a schematic diagram showing a frame manufacturing process according to an embodiment of the present invention.

圖7是示出本發明之其他實施例涉及之框架製造過程的概略圖。7 is a schematic diagram showing a frame manufacturing process according to another embodiment of the present invention.

圖8是示出本發明之一實施例涉及的遮罩移送系統的組成要素的概略圖。FIG. 8 is a schematic diagram showing components of a mask transfer system according to an embodiment of the present invention.

圖9是示出本發明之一實施例涉及的真空移送部吸附遮罩的狀態的概略圖。9 is a schematic diagram showing a state in which a vacuum transfer part according to an embodiment of the present invention sucks a mask.

圖10是示出本發明之一實施例涉及的遮罩移送系統的操作過程的概略圖。FIG. 10 is a schematic diagram showing an operation procedure of a mask transfer system according to an embodiment of the present invention.

圖11是示出本發明之一實施例涉及的將遮罩裝載部裝載於框架上且使遮罩與框架的單元區域對應的狀態的概略圖。FIG. 11 is a schematic diagram showing a state in which the mask mounting portion is mounted on the frame and the mask corresponds to the unit area of the frame according to an embodiment of the present invention.

圖12是示出本發明之一實施例涉及的使遮罩依序黏合於單元區域的過程的概略圖。12 is a schematic diagram showing a process of sequentially bonding a mask to a cell area according to an embodiment of the present invention.

圖13是示出本發明之一實施例涉及的將遮罩黏合於框架的單元區域之後降低工藝區域的溫度的過程的概略圖。13 is a schematic diagram showing a process of reducing the temperature of a process area after bonding a mask to a unit area of a frame according to an embodiment of the present invention.

圖14是示出本發明之一實施例涉及的利用框架一體型遮罩之OLED像素沉積裝置的概略圖。14 is a schematic diagram showing an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention.

60:真空移送部 60: Vacuum transfer section

90:遮罩裝載部 90: mask loading section

91:凹陷部 91: Depression

92:移送部 92: Transfer Department

93:鐳射貫穿孔 93: Laser through hole

95:加熱部 95: Heating Department

100:遮罩 100: mask

C:單元、遮罩單元 C: Unit, mask unit

DM:虛設部、遮罩虛設部 DM: Dummy Department, Mask Dummy Department

V:真空 V: Vacuum

VH:真空孔 VH: vacuum hole

Claims (14)

一種遮罩移送系統,其為在一體形成遮罩與用於支撐遮罩的框架的工藝中裝載並移動遮罩之OLED像素形成用遮罩的遮罩移送系統,其中該遮罩移送系統包括: 遮罩裝載部,其吸附遮罩的一面並可進行裝載;以及 移送部,其移動遮罩裝載部並對其進行翻轉(flip)。A mask transfer system is a mask transfer system for loading and moving a mask for forming an OLED pixel of a mask in a process of integrally forming a mask and a frame for supporting the mask, wherein the mask transfer system includes: The mask loading part, which absorbs one side of the mask and can be loaded; and The transfer section moves the mask loading section and flips it. 如請求項1所述的遮罩移送系統,其中遮罩裝載部為平板形狀,且與遮罩對應的一面形成有多個真空孔(vacuum hole)。The mask transfer system according to claim 1, wherein the mask loading portion has a flat plate shape, and a plurality of vacuum holes are formed on a surface corresponding to the mask. 如請求項1所述的遮罩移送系統,其中遮罩裝載部的角部形成有凹陷部,遮罩裝載部的面積大於遮罩的面積,若遮罩裝載於遮罩裝載部上,則至少遮罩的角部向凹陷部的外側突出。The mask transfer system according to claim 1, wherein the corner of the mask loading portion is formed with a recessed portion, the area of the mask loading portion is larger than the area of the mask, and if the mask is loaded on the mask loading portion, at least The corner of the mask protrudes to the outside of the recess. 如請求項1所述的遮罩移送系統,其中遮罩裝載部包括加熱部。The mask transfer system according to claim 1, wherein the mask loading part includes a heating part. 如請求項1所述的遮罩移送系統,其中遮罩裝載部與遮罩的焊接部對應之部分上形成有鐳射貫穿孔。The mask transfer system according to claim 1, wherein a laser through hole is formed in a portion of the mask loading portion corresponding to the welding portion of the mask. 如請求項1所述的遮罩移送系統,其中移送部連接於與遮罩接觸的遮罩裝載部的一面相對的另一面,移送部使遮罩裝載部向X、Y、Z、θ軸移動,且翻轉遮罩裝載部使遮罩朝向下方。The mask transfer system according to claim 1, wherein the transfer section is connected to the other side of the mask loading section that is in contact with the mask, and the transfer section moves the mask loading section toward the X, Y, Z, and θ axes , And flip the mask loading part so that the mask faces downward. 一種框架一體型遮罩的製造方法,使至少一個遮罩與用於支撐遮罩的框架形成為一體,其中該方法包括以下步驟: (a)提供具備至少一個遮罩單元區域的框架; (b)使遮罩的一面吸附於遮罩裝載部上並進行裝載; (c)將遮罩裝載部裝載於框架上,使遮罩與框架的遮罩單元區域對應;以及 (d)向遮罩的焊接部照射鐳射,以使遮罩黏合到框架上。A method for manufacturing a frame-integrated mask, in which at least one mask is integrated with a frame for supporting the mask, wherein the method includes the following steps: (A) Provide a frame with at least one mask unit area; (B) Attach one side of the mask to the mask loading part and load it; (C) Mount the mask loading part on the frame so that the mask corresponds to the mask unit area of the frame; and (D) Irradiate laser to the welding part of the mask to make the mask stick to the frame. 如請求項7所述的框架一體型遮罩的製造方法,其中遮罩裝載部為平板形狀,且與遮罩對應的一面形成有多個真空孔(vacuum hole),步驟(b)中,多個真空孔向遮罩的一面施加抽吸壓力,以使遮罩吸附到遮罩裝載部上。The method for manufacturing a frame-integrated mask according to claim 7, wherein the mask mounting portion has a flat plate shape, and a plurality of vacuum holes (vacuum holes) are formed on a surface corresponding to the mask. In step (b), many A vacuum hole applies suction pressure to one side of the mask to attract the mask to the mask mounting portion. 如請求項8所述的框架一體型遮罩的製造方法,其中步驟(b)包括以下步驟: (b1)真空移送部吸附遮罩的至少兩側;以及 (b2)移動真空移送部,以使遮罩的一面吸附於遮罩裝載部上並進行裝載。The method for manufacturing a frame-integrated mask according to claim 8, wherein step (b) includes the following steps: (B1) At least two sides of the vacuum suction part suction mask; and (B2) The vacuum transfer unit is moved so that one side of the mask is attracted to the mask loading unit and mounted. 如請求項9所述的框架一體型遮罩的製造方法,其中在步驟(b1)或者步驟(b2)中,真空移送部向外側拉拽吸附的遮罩,以使遮罩平坦地展開。The method for manufacturing a frame-integrated mask according to claim 9, wherein in step (b1) or step (b2), the vacuum transfer unit pulls the attracted mask outward to spread the mask flatly. 如請求項7所述的框架一體型遮罩的製造方法,其中步驟(c)包括以下步驟: (c1)翻轉遮罩裝載部,以使遮罩朝向下方; (c2)移送部控制遮罩裝載部的位置,以使遮罩在框架的單元區域上對準;以及 (c3)將遮罩裝載部裝載於框架上,以使遮罩與框架的遮罩單元區域對應。The method for manufacturing a frame-integrated mask according to claim 7, wherein step (c) includes the following steps: (C1) Turn over the mask loading part so that the mask faces downward; (C2) The transfer section controls the position of the mask loading section so that the mask is aligned on the unit area of the frame; and (C3) Mount the mask mounting portion on the frame so that the mask corresponds to the mask unit area of the frame. 如請求項7所述的框架一體型遮罩的製造方法,其中使遮罩與遮罩單元區域對應之前或之後,將包含有框架的工藝區域的溫度提升至第一溫度, 將遮罩黏合於框架之後,將包含有框架的工藝區域的溫度降低至第二溫度。The method for manufacturing a frame-integrated mask according to claim 7, wherein the temperature of the process area including the frame is raised to the first temperature before or after making the mask correspond to the mask unit area, After the mask is adhered to the frame, the temperature of the process area containing the frame is reduced to the second temperature. 如請求項12所述的框架一體型遮罩的製造方法,其中第一溫度等於或高於OLED像素沉積工藝的溫度,第二溫度為至少低於第一溫度的溫度,第一溫度是25℃至60℃中任意一個溫度,第二溫度是比第一溫度低且20℃至30℃中任意一個溫度,OLED像素沉積工藝的溫度是25℃至45℃中任意一個溫度。The method for manufacturing a frame-integrated mask according to claim 12, wherein the first temperature is equal to or higher than the temperature of the OLED pixel deposition process, the second temperature is at least a temperature lower than the first temperature, and the first temperature is 25°C Any temperature between 60°C and 60°C, the second temperature is lower than the first temperature and between 20°C and 30°C, and the temperature of the OLED pixel deposition process is between 25°C and 45°C. 如請求項12所述的框架一體型遮罩的製造方法,其中遮罩裝載部包括加熱部,在步驟(b)與步驟(c)之間,使遮罩保持比第一溫度高3℃至10℃的溫度。The method for manufacturing a frame-integrated mask according to claim 12, wherein the mask loading section includes a heating section, and between step (b) and step (c), the mask is kept 3°C higher than the first temperature to 10 ℃ temperature.
TW108127574A 2018-08-08 2019-08-02 Transfer system of mask and producing method of mask integrated frame TW202015158A (en)

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