TW201946201A - Die bonding apparatus and manufacturing method of semiconductor device for attaching a die onto a non-marked temporary substrate with excellent positioning accuracy - Google Patents

Abstract

An object of the present invention is to provide a die bonding apparatus for attaching a semiconductor chip (die) onto a non-marked temporary substrate with excellent positioning accuracy. To achieve the object, the die bonding apparatus includes: a bonding head for mounting a picked die on an upper surface of a transparent substrate; a transparent bonding stage fixed to the substrate; a plate separated from the bonding stage and disposed below the bonding stage, and provided with a reference mark for recognizing the position of the die when the die is placed on the substrate; and a camera for photographing the die or the reference mark through the bonding stage.

Description

Sticky crystal device and manufacturing method of semiconductor device

This case is related to a die attach device, which can be applied to, for example, a die place for a fan-out panel-level package.

In the field of electronic component mounting, a sealing resin is used to collectively seal a dummy substrate and a plurality of semiconductor wafers arranged on an adhesive layer laminated on the dummy substrate, thereby forming a plurality of semiconductor wafers and covering a plurality of semiconductor wafers. After sealing the sealing resin of the semiconductor wafer with the sealing body, the hypothetical substrate including the adhesive layer is peeled from the sealing body, and then a process of forming a rewiring layer on the surface of the sealing body to which the adhesive layer is attached is performed. In this case, the accuracy of joining the redistribution layer to the semiconductor wafer depends on the positioning accuracy of the wafer on the assumed substrate. Therefore, it is necessary to improve the positioning accuracy when mounting the semiconductor wafer on the virtual substrate.
[Prior technical literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2014-45013
[Patent Document 2] Japanese Patent Laid-Open No. 2017-139365

(Problems to be solved by the invention)

By marking the hypothetical substrate, the positioning accuracy of the semiconductor wafer with respect to the hypothetical substrate when the hypothesis is fixed can be improved. However, the position on the hypothetical substrate is determined according to the structure of the semiconductor wafer or the arrangement relationship between the final semiconductor wafer and the sealing body. That is, it is necessary to prepare a hypothetical substrate having predetermined marks corresponding to the configuration or part configuration of the final product. Therefore, it is necessary to prepare a plurality of hypothetical substrates having predetermined marks for each product, and there is a problem that the cost increases.

The object of this case is to provide a die-bonding device that mounts a semiconductor wafer (die) on a hypothetical substrate on a hypothetical substrate without a mark and has a high positioning accuracy.

(Means for solving problems)

The representative outline in this case is briefly explained as follows.
That is, the sticky crystal device has:
A bonding head, which is configured to place the picked die on a transparent substrate;
A transparent bonding platform for fixing the aforementioned substrate;
A plate located away from the bonding platform and located below the bonding platform, having a reference mark for identifying the position of the crystal die when the crystal die is placed on the substrate; and a camera passing through the bonding platform Take in the aforementioned crystal grains or the aforementioned fiducial marks.

[Effect of the invention]

According to the above-mentioned crystal sticking device, the accuracy of crystal grain placement can be improved.

Hereinafter, a comparative example, an Example, and a modification are demonstrated using drawing. However, in the following description, the same components are denoted by the same reference numerals, and redundant descriptions may be omitted. In addition, in order to make the description clearer, the width, thickness, and shape of each part may be schematically shown in comparison with the actual form. However, this is an example and does not limit the interpreter of the present invention.

A fan-out wafer level package (FOWLP) is a package in which a redistribution layer is formed over a wide area exceeding a wafer area. Fan Out Panel Level Package (FOPLP) is an idea that further breaks through the manufacturing of FOWLP together. In FOWLP, a large number of silicon dies are placed on a wafer with a diameter of 300 mm to carry out package manufacturing together, thereby reducing the manufacturing cost per package. It is FOPLP that applies the idea of collective manufacturing to a larger panel (panel-shaped substrate) than a wafer. The panel is a printed circuit board or a glass substrate (for example, a substrate for manufacturing a liquid crystal panel).

There are many types of manufacturing processes in FOPLP. One of them is to preliminarily bond the crystal grains picked up from the wafer to the glass panel of the substrate via an adhesive main agent coated on the glass panel. The resin is sealed together, and the sealing body is peeled from the glass panel to perform rewiring or formation of a pad (PAD). In order to maintain good yield and quality, this method requires that crystal grains be mounted on a glass panel with high accuracy. In accordance with the miniaturization of the crystal grains and high-density wiring, high precision such as 3 μm is required.

Although it is possible to think of a method for improving the accuracy of a manufacturing apparatus and aligning a glass panel with a correction mark, it is difficult to reuse a glass panel (as a model) when the glass panel is processed to form a target mark. To form an alignment mark on a glass panel with an accuracy of less than 3 μm, it takes cost, the cost of the glass panel increases, and the packaging price also rises. For this reason, it is necessary to mount crystal grains on a non-marked, unpatterned glass panel with high accuracy, and the manufacturing equipment becomes expensive. In order to reduce the cost of FOPLP, a manufacturing apparatus capable of mounting with high accuracy and low cost is required.

Then, the technique of setting a target mark on the stage holding a fixed glass panel was examined (comparative example). This will be described using FIG. 10. 10 is a cross-sectional view showing a bonding stage and a glass panel of a comparative example.

A target mark TMR is engraved on the glass panel GP side of the bonding stage BSR. The glass panel GP recognizes the target mark TMR with the substrate recognition camera 44 and corrects the placement position of the die D. Thereby, a manufacturing device capable of mounting crystal grains on a non-patterned glass panel GP with high stability can be provided, which can improve the quality and yield of FOPLP while reducing the original manufacturing cost. The target mark TMR of the joint platform BSR is adjusted for each device in advance to achieve stable installation accuracy. In addition, by performing identification and correction operations on the target mark TMR at any time, it is possible to correct the accuracy deviation caused by the chronological change and temperature change of the device, which can help maintain accuracy.

However, in the method of the comparative example in which the target mark is marked on the joining platform, the joining platform must be replaced every time the product is changed.

Therefore, in the embodiment, a bonding platform of a glass panel to which a hypothetical substrate is fixed is formed of transparent materials such as glass, and a target mask plate (plate) having a target mark (reference mark) is provided under the bonding platform. .

Hereinafter, an example applicable to FOPLP will be described as an embodiment, but it can also be applied to FOWLP.

[Example]

FIG. 1 is a top view schematically illustrating a flip chip bonder according to the embodiment. FIG. 2 is a diagram illustrating the operation of picking up a reversing head, a transfer head, and a bonding head when viewed from the direction of arrow A in FIG. 1.

The flip-chip bonding machine 10 is roughly divided into a die supply section 1, a pick-up section 2, a transfer section 8, an intermediate stage section 3, a joint section 4, a transfer section 5, a substrate supply section 6K, a substrate carry-out section 6H, and monitoring and control sections Operation control device 7.

First, the crystal grain supply unit 1 is a crystal grain D that supplies a substrate P mounted on a glass substrate or the like. The die supply unit 1 includes a wafer holding table 12 that holds the divided wafer 11, an ejection unit 13 indicated by a dotted line from the wafer 11, and a wafer ring supply unit 18. . The die supply unit 1 is moved in the XY direction by a driving means (not shown), and the picked-up die D is moved to the position of the jack unit 13. The wafer ring supply unit 18 is a wafer cassette having a wafer ring therein, and sequentially supplies the wafer ring to the die supply unit 1 and replaces the wafer ring with a new wafer ring. The die supply unit 1 moves the wafer ring to a pick-up point so that a desired die can be picked up from the wafer ring. The wafer ring is a fixed wafer and can be mounted on a jig of the die supply unit 1.

The pick-up unit 2 includes a pick-up reversing head 21 that picks up and reverses a crystal grain D, and driving units (not shown) that raise, lower, rotate, reverse, and move the collet 22 in the X direction. With such a configuration, the pick-up reversing head 21 picks up the crystal grains, rotates the pick-up reversing head 21 by 180 degrees, reverses the bumps of the crystal grain D and faces downward, and forms the posture of handing the crystal grain D to the transfer head 81.

The transfer unit 8 receives the reversed die D from the pick-up reversing head 21 and is placed on the intermediate stage 31. The transfer unit 8 includes a transfer head 81 including a chuck 82 that holds and holds the crystal grain D on the front end similarly to the pick-up inversion head 21, and a Y drive unit 83 that moves the transfer head 81 in the Y direction.

The intermediate stage unit 3 includes an intermediate stage 31 and a stage recognition camera 34 on which the die D is temporarily placed. The intermediate platform 31 can be moved in the Y direction by a driving unit (not shown).

The bonding portion 4 picks up the die D from the intermediate stage 31 and is bonded to the substrate P that is transferred. The joint portion 4 includes a joint head 41 including a chuck 42 that adsorbs and holds the crystal grain D on the tip end in the same manner as the pickup flip head 21, a Y beam 43 that moves the joint head 41 in the Y direction, and an ingestion target mark (see FIG. 4) A substrate recognition camera 44 and an X-beam 45 that recognize the joining position. With this configuration, the bonding head 41 picks up the die D from the intermediate stage 31 and bonds the die D to the substrate P based on the imaging data of the substrate recognition camera 44.

The transfer unit 5 includes transfer rails 51 and 52 in which the substrate P moves in the X direction. The transport rails 51 and 52 are provided in parallel. With such a configuration, the substrate P is carried out from the substrate supply section 6K, and moved to the bonding position along the transfer rails 51, 52, and then moved to the substrate carry-out section 6H after the bonding, and the substrate P is delivered to the substrate carry-out section 6H. In the substrate P bonding die D, the substrate supply unit 6K carries a new substrate P and waits on the transfer rails 51 and 52.

FIG. 3 is a schematic cross-sectional view showing a main part of the crystal grain supply unit in FIG. 1. As shown in FIG. 3, the die supply unit 1 includes an expansion ring 15 holding a wafer ring 14 and a dicing tape 16 having a plurality of die D adhered to the wafer ring 14. A support ring 17 and a jacking unit 13 for jacking the die D to the upper side. In order to pick up a predetermined die D, the jacking unit 13 is moved in the vertical direction by a driving mechanism (not shown), and the die supply unit 1 is moved in the horizontal direction.

The details of the joint portion will be described with reference to FIGS. 1, 4, and 5. FIG. 4 is a schematic cross-sectional view showing a main portion of the joint portion 4. FIG. 5 is a plan view showing a target shield plate.

As shown in FIGS. 1 and 4, the joint portion 4 includes a joint platform BS and a target shield plate MP supported on a stand 53, an X beam 45 provided near the transport rails 51 and 52, and an X support. The Y beam 43 on the beam 45, the joint head 41 supported by the Y beam 43, and a driving unit (not shown) that drives the joint head 41 in the Y-axis direction and the Z-axis direction.

The bonding head 41 is a device having a chuck 42 for detachably holding the crystal grain D by vacuum suction, and is mounted on the Y beam 43 so as to reciprocate in the Y-axis direction.

The bonding head 41 has a function of transporting the die D picked up from the intermediate stage 31 and mounting the die D on a substrate P that is suction-fixed to the bonding stage BS.

As shown in FIG. 1, the Y-beam 43 extends in the Y-axis direction so as to straddle the joint platform BS, and both ends are supported in the X-axis direction by the X-beam 45 to move freely. In addition, when the joint head 41 is moved closer to the intermediate platform 31 side than the X beam 45, the joint head 41 rises, so that the chuck 42 can be higher than the X beam 45.

As shown in FIG. 4, the bonding platform BS is formed of a transparent material such as glass, and is supported by a supporting portion BSa so as to be movable up and down. The target shield plate MP is supported by a support portion MPa so as to be movable up and down. The target shielding plate MP is separated from the bonding platform BS, and is provided under the bonding platform BS so as to be replaceable. As shown in FIG. 5, the target shield plate MP is printed with a target mark TM indicating a substrate mounting position. The target mark TM may be formed on the target shield plate MP by marking. The target mark TM is, for example, a square having a size of 1 to 2 mm. The substrate P is a glass panel having a rectangular shape in a plane. As shown in FIG. 4, an adhesive main agent G is coated on the substrate P as shown in FIG. 4. In addition, the base agent G can also be applied without adhesion.

Since the substrate P and the bonding platform BS are transparent, the substrate recognition camera 44 can recognize the target mark TM provided on the target shield plate.

Next, a bonding method (a method for manufacturing a semiconductor device) performed in the flip-chip bonding machine according to the embodiment will be described with reference to FIG. 6. FIG. 6 is a flowchart showing a bonding method performed by the flip-chip bonding machine of the embodiment.

Step S1: The control device 7 moves the wafer holding table 12 so that the picked-up die D can be located directly above the jacking unit 13, and positions the peeling target die on the jacking unit 13 and the chuck 22. The jacking unit 13 is moved so that the upper surface of the jacking unit 13 will contact the back surface of the dicing tape 16. At this time, the control device 7 sucks the dicing tape 16 on the upper surface of the jacking unit 13. The control device 7 lowers the chuck 22 while evacuating the chuck 22 to cause the chuck 22 to land on the crystal grain D to be peeled, and adsorbs the crystal grain D. The control device 7 raises the chuck 22 and peels the die D from the dicing tape 16. Thereby, the crystal grain D is picked up by the pick-up flip head 21.

Step S2: The control device 7 moves the pickup reversing head 21.

Step S3: The control device 7 rotates the pick-up reversing head 21 by 180 degrees, reverses the bump surface (surface) of the crystal grain D and faces downward, and forms the posture of handing the crystal grain D to the transfer head 81.

Step S4: The control device 7 picks up the die D from the chuck 22 of the pick-up reversing head 21 through the chuck 82 of the transfer head 81, and transfers the die D.

Step S5: The control device 7 reverses the pickup reversing head 21, and the suction side of the chuck 22 faces downward.

Step S6: Before or in parallel with step S5, the control device 7 moves the transfer head 81 to the intermediate platform 31.

Step S7: The control device 7 places the die D held on the transfer head 81 on the intermediate stage 31.

Step S8: The control device 7 moves the transfer head 81 to the transfer position of the die D.

Step S9: After step S8 or in parallel, the control device 7 moves the intermediate platform 31 to a transfer position with the joint head 41.

Step SA: The control device 7 picks up the crystal grain D from the intermediate platform 31 through the chuck of the joint head 41, and transfers the crystal grain D.

Step SB: The control device 7 moves the intermediate platform 31 to a transfer position with the transfer head 81.

Step SC: The control device 7 moves the die D held by the chuck 42 of the bonding head 41 onto the substrate P.

Step SD: The control device 7 mounts the die D picked up from the intermediate stage 31 with the chuck 42 of the bonding head 41 on the substrate P coated with the adhesive main agent G. More specifically, the control device 7 uses the substrate recognition camera 44 to identify the target mark (position identification mark) TM of the target shield plate MP by the substrate P and the bonding platform BS. The control device 7 recognizes the edge of the die D by the substrate recognition camera 44. Just before the placement, the edge of the crystal grain D is identified. In this case, it is best to recognize the visual field simultaneously. The control device 7 is a calculation recognition result. The identification target mark TM calculates the placement position, and the identification crystal grain D calculates the crystal grain position. The control device 7 corrects the position of the crystal grain D by moving the bonding head 41 based on the calculation result. The control device 7 places (places) the die D on the substrate P.

Step SE: The control device 7 moves the joint head 41 to a transfer position with the intermediate platform 31.

After step S8, the control device 7 takes out the substrate P to which the die D is bonded from the transfer rails 51 and 52 in the substrate carrying-out portion 6H. The substrate P is carried out from the flip-chip bonding machine 10. Then, a plurality of crystal grains (semiconductor wafers) arranged on the adhesive layer G of the substrate P are sealed together with a sealing resin, thereby forming a sealing body including the plurality of semiconductor wafers and the sealing resin covering the plurality of semiconductor wafers. The substrate P is peeled from the sealing body, and then a redistribution layer is formed on the surface of the sealing body to which the substrate P is attached, thereby manufacturing FOPLP.

In the embodiment, a glass panel platform on which a substrate on which a semiconductor wafer is placed is formed using glass or a transparent material, and a semiconductor wafer mounted on the glass panel is formed underneath which is replaceable and engraved or printed to identify the semiconductor wafer placed on the glass panel. Using the reference mark as the reference, the target shield plate of the reference mark is used as a reference, and the semiconductor wafer is placed on the unpatterned glass panel. The target shield is in a non-contact configuration with the bonding platform. The target mark is provided on the upper side of the target shielding plate when the image is recognized by the substrate recognition camera from above. The position of the target mark is captured by the upper substrate recognition camera, and the position is checked and corrected.

Thereby, a semiconductor wafer can be mounted on a non-marked, unpatterned glass panel with high accuracy.

The glass panel that is a model of FOPLP can be processed without a target mark to carry a high-precision semiconductor wafer. The reuse of the glass panel is easy, and the cost can be reduced. There is no influence on the deviation caused by the processing of the glass panel, and the semiconductor wafer of the reference shield can be placed frequently.

The target shield panel is easy to replace when the type is changed, which can shorten the operation time and improve the processing capacity. In addition, verification of offline accuracy can be performed frequently. Furthermore, contact with the engagement platform during replacement does not occur.

The target shield plate has no contact with the bonding platform and does not deteriorate. Therefore, it can be used permanently as long as there is no replacement due to a change in type.

＜ Modifications ＞
In the following, several representative modifications are given. In the following description of the modified example, the same reference numerals as those of the above-described embodiment may be used for portions having the same configuration and function as those described in the above-mentioned embodiment. In addition, the description of such a part can appropriately refer to the description of the embodiment described above within a technically inconsistent range. In addition, a part of the above-mentioned embodiments and all or a part of the plural modifications can be appropriately combined and applied within a range that is not technically contradictory.

(First Modification)
FIG. 7 is a schematic side view showing a main part of a joint portion according to a first modification.
The target shielding plate MPA of the first modified example is provided below the bonding platform BS and separated from the bonding platform BS as in the embodiment. The target shield plate MPA is made of a transparent material (for example, glass), and a target mark TM is provided on the lower side of the target shield plate MPA. From the lower side of the target shield plate MPA, an under vision camera 46 or the like is used to verify and correct the positions of the target mark TM and the die D.

(Second Modification)
FIG. 8 is a schematic side view showing a main part of a joint portion according to a second modification.
The target shielding plate MPB of the second modification is provided below the bonding platform and separated from the bonding platform BS as in the embodiment. The target shield plate MPB has an opening OP at the position of the target mark. From the lower side of the target shield plate MPB, a self-luminous target mark TMB is constituted by a light source LS such as an LED. The substrate recognition camera 44 captures and recognizes this light. The illumination of the camera is not used to identify the self-illuminating target mark TMB.

By using the self-luminous target mark TMB, even if the state of the substrate P and the bonding stage BS is poor, it is difficult to recognize the target mark TM by the lighting of the camera. For example, when the imaging is affected by the reflection of the surface of the substrate P, the influence can be eliminated and corrected with high accuracy.

(Third Modification)
FIG. 9 is a schematic side view showing a main part of a joint portion according to a third modification.
The target shielding plate MPC of the third modified example is provided below the bonding platform and separated from the bonding platform BS as in the embodiment. The target shield plate MPC is composed of a display panel DP such as liquid crystal, organic EL, or plasma light emission. The display panel DP displays the position of a semiconductor wafer (target mark TMC) placed on the substrate P based on image data. The display panel DP displays a wavelength (color) easily recognized by the glass panel P as a dot size or a line width of a recognizable position of the substrate recognition camera 44.

By constructing the target shield plate MPC with a display panel, only the image data of the display panel can be changed to correspond to the configuration change of the target mark when the type is changed, etc. The replacement of the target shield plate can be eliminated, and further processing capacity can be improved.

The inventions developed by the present inventors have been specifically described based on the embodiments, examples, and modifications, but the present invention is not limited to the above-mentioned embodiments, examples, and modifications, and various modifications can be implemented.

For example, in the embodiment, a description is given of a flip chip bonding machine, but it is also applicable to a die bonding machine that does not reverse the crystals picked up from the crystal supply unit and joins them.

1‧‧‧Crystal Supply Department

2‧‧‧Pick up department

21‧‧‧Pick up flip head

22‧‧‧ chuck

3‧‧‧Middle Platform Department

4‧‧‧ Junction

41‧‧‧Joint head

42‧‧‧Chuck

43‧‧‧Y Beam

44‧‧‧ substrate identification camera

45‧‧‧X beam

7‧‧‧control device

10‧‧‧Flip Chip Adhesive Machine

11‧‧‧ wafer

13‧‧‧ jacking unit

D‧‧‧ Grain

P‧‧‧ substrate

MP‧‧‧Target shielding board

G‧‧‧ Adhesive layer

TM‧‧‧ Target Mark

BS‧‧‧Joint Platform

FIG. 1 is a top plan view showing an outline of a flip chip bonding machine according to an embodiment.

FIG. 2 is a diagram illustrating the operation of picking up the reversing head, the conveying head, and the joining head when viewed from the direction of arrow A in FIG. 1.

FIG. 3 is a schematic cross-sectional view showing a main part of the crystal grain supply unit in FIG. 1.

FIG. 4 is a schematic side view showing a main part of the joint portion of FIG. 1.

FIG. 5 is a plan view showing the target shielding plate of FIG. 4.

FIG. 6 is a flowchart showing a bonding method performed by the flip-chip bonding machine of the embodiment.

FIG. 7 is a schematic side view showing a main part of a joint portion according to a first modification.

FIG. 8 is a schematic side view showing a main part of a joint portion according to a second modification.

FIG. 9 is a schematic side view showing a main part of a joint portion according to a third modification.

FIG. 10 is a schematic side view showing a main part of a joint portion of a comparative example.

Claims (13)

A crystal sticking device is characterized by: A bonding head, which is configured to place the picked die on a transparent substrate; A transparent bonding platform for fixing the aforementioned substrate; A plate located away from the bonding platform and located below the bonding platform, and having a reference mark for identifying a position of the die when the die is placed on the substrate; and The camera captures the crystal grain or the fiducial mark through the bonding platform. For example, the crystal sticking device according to the first patent application range, wherein the substrate is provided with a glass substrate and an adhesive provided on the upper surface of the glass substrate. The camera is located above the substrate, picks up the crystal grains, and picks up the reference mark through the substrate and the bonding platform. For example, the crystal sticking device according to item 2 of the patent application, wherein the board has the aforementioned reference mark engraved or printed on the upper side thereof. For example, the crystal sticking device according to item 2 of the patent application, wherein there is a light source below the board, The board has an opening, The reference mark is configured by the light source and the opening. For example, the crystal sticking device according to item 2 of the patent application, wherein the aforementioned board has a display panel, The reference mark is configured by a display on the display panel. For example, the crystal sticking device according to the first patent application range, wherein the substrate is provided with a glass substrate and an adhesive provided on the upper surface of the glass substrate. The board has the aforementioned reference mark engraved or printed on the lower side, The camera is located below the board, picks up the fiducial mark, and picks up the crystal grains through the bonding platform and the substrate. The crystal sticking device described in any one of claims 1 to 6 of the scope of patent application, further including: Die supply department; and A pick-up head for picking up a crystal grain from the crystal grain supply part and turning it upside down, The bonding head picks up the die from the pick-up head, the circuit forming surface of the die is face down, and the die is placed on the upper surface of the substrate. For example, the crystal sticking device according to item 7 of the patent application scope further includes: an intermediate platform on which the crystal grains picked up by the picking head are placed, The bonding head picks up the die from the intermediate platform, places a circuit forming surface of the die upward, and places the die on an upper surface of the substrate. A method for manufacturing a semiconductor device, comprising: (a) Preparation: A project of a die bonding device having a transparent bonding platform and a board, the transparent bonding platform is fixed to a transparent substrate with an adhesive layer thereon, and the board is under the aforementioned bonding platform and leaves the aforementioned bonding Designed on a platform with benchmark marks; (b) Preparation: the process of holding wafer rings with dicing tape with dies; (c) the process of picking up the aforementioned die from the aforementioned wafer ring; and (d) the process of placing the picked-up dies on the aforementioned substrate, In the step (d), the picked-up crystal grains and the reference mark are taken while the picked-up crystal grains are placed on the substrate. For example, in the method for manufacturing a semiconductor device according to item 9 of the scope of patent application, in the step (d), the crystal grain and the reference mark are taken from above the substrate. For example, the method for manufacturing a semiconductor device according to item 10 of the application, wherein the (c) process further includes a process of reversing the picked up crystal grains up and down, The aforementioned (d) process is to pick up the inverted crystal grains, and place the circuit formation surface of the crystal grains on the substrate. For example, the method for manufacturing a semiconductor device according to item 10 of the application, wherein the above-mentioned (c) process further includes a process of placing the picked-up die on the intermediate platform, The (d) process is to pick up the die from the intermediate platform, and place the circuit formation surface of the die on the substrate. For example, the method for manufacturing a semiconductor device according to the 11th or 12th of the scope of patent application, wherein the (d) process is to correct the position of the picked-up die according to the imaging result of the die and the reference mark, and place The aforementioned substrate.