TW201944512A - 轉移載板與晶粒載板 - Google Patents
轉移載板與晶粒載板 Download PDFInfo
- Publication number
- TW201944512A TW201944512A TW107113115A TW107113115A TW201944512A TW 201944512 A TW201944512 A TW 201944512A TW 107113115 A TW107113115 A TW 107113115A TW 107113115 A TW107113115 A TW 107113115A TW 201944512 A TW201944512 A TW 201944512A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- transfer
- thermal expansion
- micro
- expansion coefficient
- Prior art date
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 204
- 239000000758 substrate Substances 0.000 title claims abstract description 131
- 239000000853 adhesive Substances 0.000 claims description 27
- 230000001070 adhesive effect Effects 0.000 claims description 27
- 239000012790 adhesive layer Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- 239000010410 layer Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/7532—Material of the auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/77—Apparatus for connecting with strap connectors
- H01L2224/7798—Apparatus for connecting with strap connectors specially adapted for batch processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
- H01L2224/95136—Aligning the plurality of semiconductor or solid-state bodies involving guiding structures, e.g. shape matching, spacers or supporting members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
一種轉移載板,用以轉移一第一基板上的多個微型元件至一第二基板。此轉移載板包括一基板與多個轉移件。該些轉移件間隔設置於該基板的一上表面。每一轉移件具有相對的一第一表面與一第二表面。該些轉移件以第一表面接觸此基板。其中,該基板的熱膨脹係數與該些轉移件的熱膨脹係數不相同,該些轉移件的熱膨脹係數與該些微型元件的熱膨脹係數的差值小於該基板的熱膨脹係數與該些轉移件的熱膨脹係數的差值。
Description
本發明係關於一種轉移載板與晶粒載板,特別是一種具有表面微結構的轉移載板與晶粒載板。
發光二極體(light emitting diode, LED)作為高效率的發光元件,被廣泛的使用在各種領域。目前習用的發光元件製造方法是透過磊晶的方式,在磊晶基板上依序形成N型半導體層、發光層、P型半導體層與電極,藉此得到發光元件。
當發光元件尺寸縮小至微米(micrometer, μm)等級而形成微型發光元件,並被應用於顯示裝置時,眾多微型發光元件構成的微型發光元件陣列被排列在顯示面板上以作為顯示裝置的光源。而通常顯示裝置製造方法是先在磊晶基板上形成微型發光元件。然後藉由轉移載板將微型發光元件自磊晶基板上取下,再將取下的微型發光元件設置在顯示面板上。藉此達到巨量轉移微型發光元件、提高製程效率。更進一步來說,為配合微型發光元件所製作的微型電子元件也需要利用巨量轉移技術來提高製程效率。
一般來說,在此轉移過程當中,轉移載板在某些程序中會被加熱,以使微型發光元件能夠暫時地固著於轉移載板,或是使轉移載板能夠與微型發光元件分離以讓微型發光元件被設置於顯示面板上。但是當轉移載板被加熱時,轉移載板的結構有可能因熱而膨脹,致使轉移載板上的結構無法與磊晶基板上的各微型發光元件精準對位,或是讓暫時固著於轉移載板的各微型發光元件無法與顯示面板上的驅動電路對位,造成製程上的困擾,甚至降低了整體良率。
本發明在於提供一種轉移載板與晶粒載板以改善轉移載板因熱膨脹現象而無法精準對位的問題。
本發明揭露了一種轉移載板。此轉移載板用以轉移一第一基板上的多個微型元件至一第二基板。此轉移載板包括一基板與多個轉移件。此基板具有一上表面。這些轉移件設置於所述的基板的上表面。每一轉移件具有相對的一第一表面與一第二表面。這些轉移件分別以這些第一表面接觸此基板。其中,所述的基板的熱膨脹係數與轉移件的熱膨脹係數不相同。轉移件的熱膨脹係數與這些微型元件的熱膨脹係數的差值小於此基板的熱膨脹係數與轉移件的熱膨脹係數的差值。
本發明揭露了一種晶粒載板。此晶粒載板包括一基板、多個轉移件、一黏著層與多個微型元件。此基板具有一上表面。這些轉移件設置於此基板的上表面。每一轉移件具有相對的一第一表面與一第二表面。這些轉移件分別以這些第一表面接觸此基板。所述的黏著層設置於這些轉移件的第二表面上。每一微型元件係藉由此黏著層固著於這些轉移件的其中之一的第二表面上。其中,此基板的熱膨脹係數與轉移件的熱膨脹係數不相同。轉移件的熱膨脹係數與這些微型元件其中任一的熱膨脹係數的差值小於一預設門檻值。
以上之關於本揭露內容之說明及以下之實施方式之說明係用以示範與解釋本發明之精神與原理,並且提供本發明之專利申請範圍更進一步之解釋。
以下在實施方式中詳細敘述本發明之詳細特徵以及優點,其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點,但非以任何觀點限制本發明之範疇。
根據本發明實施例所繪示之轉移載板可用以轉移一第一基板上的多個微型元件至一第二基板。其中,第一基板例如為磊晶基板,用以形成微型元件例如微型發光二極體(micro LED)的相關結構於其上,而第二基板例如為顯示面板。第一基板、第二基板與微型元件的相關細節請容後續詳述。
請參照圖1,係根據本發明一實施例所繪示之轉移載板1的結構示意圖,轉移載板1包括基板10與多個轉移件12。基板10具有上表面Su。各轉移件12間隔設置於基板10的上表面Su,較佳地,是以等距陣列設置,例如於x方向以距離d2的間隔排列。各轉移件12中的每一個具有相對的第一表面S1與第二表面S2。各轉移件12分別以各自的第一表面S1接觸基板10,在本實施例中,各轉移件12藉由第一表面S1固定於基板10的上表面Su上。
另一方面,每一轉移件12的熱膨脹係數與待轉移的微型元件的熱膨脹係數的差值小於基板10的熱膨脹係數與轉移件12的熱膨脹係數的差值。較佳地,在一實施例中,轉移件12的熱膨脹係數與基板10的熱膨脹係數的差值不大於基板10的熱膨脹係數的百分之五十、不小於基板10的熱膨脹係數的百分之十。更佳地,也就是說基板10與轉移件12係分別由不同的材料所形成時,而轉移件12與待轉移的微型元件則由相近的材料構成。一般來說轉移載板1在轉移過程中會因為製程形成的應力導致基板10產生翹曲,甚至轉移載板1使用中因為加熱或加壓可能使轉移件12與基板10間的應力加劇而導致基板翹曲程度增加、或轉移件的損壞、位移,進而降低轉移良率。由於微型元件的轉移過程中通常牽涉到加熱製程與加壓製程,當轉移載板1翹曲時會相當不利於轉移製程。
更進一步來說,轉移件12的熱導係數係大於基板10的熱導係數的兩倍。藉由選擇具有合適的熱導係數的材料,當對轉移載板1加熱時,熱能可以集中於轉移件12,以使轉移過程更加順暢便利。較佳地,轉移件12的熱導係數係基板10的熱導係數的兩倍至五倍之間,藉此以避免花費太多時間來對轉移載板1加熱。於一種實施態樣當中,各轉移件12的材料為無機材料,舉例來說,例如為氮化鎵(Gallium nitride, GaN)為主的磊晶結構,基板的材料為藍寶石(Sapphire),而待轉移的微型元件則是微型發光二極體結構。
請接著參照圖2A,圖2A係為根據本發明另一實施例所繪示之轉移載板的結構示意圖。在圖2A所示的實施例中,轉移載板2的結構大致上相仿於前述的轉移載板1,包含基板20與多個設置於基板20上的轉移件22,相關細節不予重複贅述。不同之處在於,轉移載板2更具有黏著層24。黏著層24具有多個黏著塊242。各黏著塊242彼此分隔設置。各黏著塊242係分別位於其中之一轉移件22的第二表面S2。在一實施例中,各黏著塊242例如係先塗佈整層黏著材料後以圖案化製程定義而成。在另一實施例中,各黏著塊242例如係前述的轉移載板1經沾取相關材料而成。又一實施例中,各黏著塊242例如係點膠的方式個別形成於轉移件的第二表面。各黏著塊242的材料例如為黑色光阻、不透光膠材、多層鉻膜或是樹脂。
延續前述,各黏著塊242係分別位於相對應的轉移件22的第二表面S2的周緣之內。所謂的第二表面S2的周緣係為第二表面S2的邊緣,或是指第二表面S2與轉移件22的側壁SW的交界處。從另一個角度來說,各黏著塊242係覆蓋各轉移件22的第二表面S2的部分,而各轉移件22的側壁SW係不被各黏著塊242所覆蓋。
除了圖2A所舉之例之外,在另一類似的實施例中,各黏著塊242的邊緣係切齊相對應的第二表面S2的周緣。藉此,以善用各轉移件22的第二表面S2,且增加轉移載板2可以用來黏著微型元件的表面積。
而在又另一類似的實施例中,如圖2B所示(圖2B係為根據本發明另一實施例所繪示之轉移載板的結構示意圖),黏著塊242除了覆蓋相對應的第二表面S2之外,黏著塊242更延伸覆蓋了相對應的轉移件22的側壁SW的至少部分。從另一個角度來說,黏著塊242係覆蓋完整的轉移件22的第二表面S2,且黏著塊242係超出第二表面S2的周緣而沿y軸方向往基板20延伸並接觸到轉移件22至少部分的側壁SW。藉此,除了可以善用轉移件22的第二表面S2而增加轉移載板2b可以用來黏著微型元件的表面積之外,還可以使各黏著塊242更穩固地附著於相應之轉移件22。
請接著參照圖3A至圖3C以說明轉移載板係如何被使用,以更明瞭相關元件的設計考量,圖3A與圖3B係為根據本發明一實施例所繪示之轉移載板與第一基板於微型元件轉移過程中之相應各階段的相對示意圖,圖3C係為根據本發明一實施例所繪示之轉移載板與第二基板於微型元件轉移過程中之第三階段的相對示意圖。在圖3A至圖3C中係以圖2A中的轉移載板2為例說明之。此外,於圖3A至圖3B中更繪示有第一基板50與其上的微型元件52a、52b、52c,而於圖3C中更繪示有第二基板60與其上的驅動電路62。
如圖3A所示,第一基板50上設置有多個微型元件52,在此係舉微型元件52a、52b、52c 為例進行說明,然微型元件52a、52b、52c的數量、排列並不以此為限。所述的各微型元件52a、52b、52c例如為微型發光二極體(micro light emitting diode, micro LED),包括了P型摻雜層、N型摻雜層、發光層與電極層。上述僅為舉例示範,微型發光二極體的實際實施態樣並不以此為限。在其他實施例中,微型元件也可以是需要大量轉移的電子元件,例如微型晶片、微型感測器等等。
各微型元件52a、52b、52c於圖面所示的x軸方向上在第一基板50上以第一距離d1間隔排列。相對於此,轉移載板2的轉移件22於x軸方向上在基板20上以第二距離d2間隔排列。第二距離d2不同於第一距離d1。在此實施例中,第二距離d2係大於第一距離d1與微型元件52的寬度W的和,來實現選擇性拾取(selective pick-up)以調整微型元件52被轉移至第二基板60上的間距。實務上,利用轉移載板2將同色的微型發光二極體(微型元件52)轉移至顯示面板的基板上,而同色的各微型發光二極體係分屬不同的畫素單元,因此一般來說,第二距離d2的大小係又關聯於、顯示面板上的畫素相對距離。
如圖3A與圖3B所示之階段,首先,轉移載板2上的各黏著塊242與第一基板50上相應的微型元件52a相接觸。接著,轉移載板2與第一基板50被加熱且其他必要的製程程序也被執行,使得微型元件52a經由各黏著塊242黏附以從第一基板50分離,且被黏附的微型元件52a暫時地固著於轉移載板2(如圖3B所示)而形成一晶粒載板2’。
然後,如圖3C所示,晶粒載板2’與一第二基板60對接以使微型元件52a與第二基板60上相應的驅動電路62接合。於實務的設備操作上,可以移動晶粒載板2’與第二基板60接合、也可以是第一基板50與第二基板60被移動使得第二基板60放置於與晶粒載板2’對接的位置。接著,基板20與第二基板60被加熱且其他必要的製程程序也被執行,以使微型元件52a與轉移載板2分離且藉由凸塊(bump)B固著於第二基板60的預定位置上,各微型元件52a更經由相應的各凸塊B電性至第二基板60的驅動電路62。在此實施例的圖式中,係以驅動電路62為個別線路的態樣繪示之,然於實務上,驅動電路62也可以是一經過整合的電路,並以不同的接點電性聯接各微型元件。
藉由重複上述步驟,第一基板50上剩餘的微型元件52b、52c依序轉移到第二基板60,並電性連接於第二基板60上的驅動電路62。在本實施例中,微型元件52a、52b、52c是微型發光二極體,即可依據第二基板60的驅動電路62所提供的驅動訊號發光而製作出微型發光二極體顯示面板。
在轉移過程中,通常在拾取與接合時都必須加熱,而熱能通常會集中於轉移件22,而使得轉移件22因熱膨脹而產生的形變對轉移件22的相對位置產生的影響會較基板20因熱膨脹造成的影響來的大。在一實施例中,各微型元件的熱膨脹係數與轉移件22的熱膨脹係數的差值係小於一個預設門檻值,在本實施例中,基板20與第一基板50是相同材料(例如均為藍寶石基板sapphire)構成,而轉移件22與微型元件52是相同材料(GaN epitaxial layer)構成。在一實施例中,微型元件的熱膨脹係數與轉移件22的熱膨脹係數的差值係不大於微型元件的熱膨脹係數的百分之十。藉此,使得轉移件22因熱膨脹而改變在基板20上之相對位置的偏移量會相仿於微型元件52因熱膨脹而改變在第一基板50上之相對位置的偏移量。換句話說,藉由依據適當地選擇轉移件22的熱膨脹係數可以使各轉移件22在基板20上的相對位置對應於微型元件52在第一基板50上的相對位置,從而提高轉移微型元件52的良率。
參照圖4,圖4係為根據本發明更一實施例所繪示之轉移載板3的結構示意圖。在圖4所示的實施例中,轉移載板3的結構係相仿於前述的轉移載板1的結構,包含基板30與多個設置於基板30上的轉移件32,相關細節不予重複贅述。不同處在於,轉移載板3更具有黏著層34。黏著層34設置轉移件32與基板30的上表面Su。黏著層34可以是於半導體製層中藉由塗佈(或旋轉塗佈)的方式設置,或者也可以是由轉移載板3貼附或沾附相關材料而形成。在此實施例中黏著層34是藉由塗布的方式形成於基板30與轉移件32上,黏著層34於上表面Su上的厚度Tb大於黏著層34於轉移件32的第二表面S2上的厚度Ta。此外,厚度Ta係小於各轉移件32的厚度Tp。厚度Tp與厚度Ta的比值為1.5~15,轉移件32厚度Tp太小在拾取時容易沾黏相鄰的微型元件,若厚度Tp太大則在接合時加熱效果會不佳、降低製程效率。在一些實施例中厚度Tp與厚度Ta分別是4.5微米、2.5微米;或分別是10微米、2.5~5微米;或分別是30微米、2.5~5微米。
請再參照圖5,圖5係為根據本發明再一實施例所繪示之轉移載板4的結構示意圖。轉移載板4的結構係相仿於前述的轉移載板2的結構,包含基板40、多個設置於基板40上的轉移件42與多個彼此分隔設置黏著塊442,各黏著塊442分別位於各轉移件42的第二表面S2,相關細節不予重複贅述。不同處在於,轉移載板4的轉移件42的第二表面S2形成有凹槽g。黏著塊442係分別設置於凹槽g中。藉此,黏著塊442得以更穩固與相應的轉移件42相連接。
參照如圖3B與晶粒載板的相關敘述,所屬技術領域具有通常知識者經詳閱本說明書後當可理解圖4與圖5所述的實施方式也可應用於前述的晶粒載板,相關細節於此不再贅述。
綜合以上所述,本發明提供了一種轉移載板與晶粒載板。轉移載板與晶粒載板係具有相仿的結構。轉移載板用以將第一基板上的微型元件(特別是應用於微型發光二極體)轉移至第二基板。以轉移載板來說,轉移載板的基板的熱膨脹係數與轉移載板的多個轉移件的熱膨脹係數不相同,也就是說是以不同材料構成;而且,這些轉移件的熱膨脹係數與這些微型元件的熱膨脹係數的差值小於小於一基板的熱膨脹係數與轉移件的熱膨脹係數的差值。由於轉移載板通常是與第一基板同時被加熱,因此,當轉移載板受熱膨脹時,第一基板也同時受熱膨脹。而藉由本發明所提供的轉移載板,轉移載板上的微結構得以精準地與第一基板上的微型元件對位,從而使微型元件順利且精準地自第一基板被取下。另一方面,晶粒載板可以說是暫時固著有微型元件的轉移載板,藉由上述的結構,晶粒載板上的微型元件得以精準地與第二基板對位,從而使各微型元件精準地設置於第二基板上的接合點,提升了整體的製造良率。
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。
1、2、2b、3、4‧‧‧轉移載板
10、20、30、40‧‧‧基板
50‧‧‧第一基板
60‧‧‧第二基板
12、22、32、42‧‧‧轉移件
242、442‧‧‧黏著塊
52、52a、52b、52c‧‧‧微型元件
62‧‧‧驅動電路
24、34‧‧‧黏著層
2’‧‧‧晶粒載板
B‧‧‧凸塊
d1‧‧‧第一距離
d2‧‧‧第二距離
g‧‧‧凹槽
S1‧‧‧第一表面
S2‧‧‧第二表面
Su‧‧‧上表面
SW‧‧‧側壁
Ta、Tb、Tp‧‧‧厚度
W‧‧‧寬度
圖1係為根據本發明一實施例所繪示之轉移載板的結構示意圖。 圖2A係為根據本發明另一實施例所繪示之轉移載板的結構示意圖。 圖2B係為根據本發明另一實施例所繪示之轉移載板的結構示意圖。 圖3A係為根據本發明一實施例所繪示之轉移載板與第一基板於微型元件轉移過程示意圖。 圖3B係為根據本發明一實施例所繪示之轉移載板與第一基板於微型元件轉移過程示意圖。 圖3C係為根據本發明一實施例所繪示之轉移載板與第二基板於微型元件轉移過程示意圖。 圖4係為根據本發明更一實施例所繪示之轉移載板的結構示意圖。 圖5係為根據本發明再一實施例所繪示之轉移載板的結構示意圖。
Claims (17)
- 一種轉移載板,用以轉移一第一基板上的多個微型元件至一第二基板,該轉移載板包括:一基板,具有一上表面;以及多個轉移件,設置於該基板的上表面,每一該轉移件具有相對的一第一表面與一第二表面,該些轉移件分別以該些第一表面接觸該基板; 其中,該基板的熱膨脹係數與該些轉移件的熱膨脹係數不相同,該些轉移件的熱膨脹係數與該些微型元件的熱膨脹係數的差值小於該基板的熱膨脹係數與每一該轉移件的熱膨脹係數的差值。
- 如請求項1所述之轉移載板,其中每一該轉移件的熱導係數大於該基板的熱導係數的兩倍、小於該基板的熱導係數的五倍。
- 如請求項1所述之轉移載板,其中該基板為藍寶石基板,該轉移件的材料包含氮化鎵。
- 如請求項1所述之轉移載板,其中每一該轉移件的熱膨脹係數與該基板的熱膨脹係數的差值不大於該基板的熱膨脹係數的百分之五十且不大於該基板的熱膨脹係數的百分之十。
- 如請求項1所述之轉移載板,更包括多個分隔設置的黏著塊,每一該黏著塊分別位於該些轉移件的其中之一的該第二表面。
- 如請求項5所述之轉移載板,其中每一該黏著塊位於對應的該第二表面的周緣之內。
- 如請求項6所述之轉移載板,其中每一該轉移件的該第二表面形成一凹槽,該些黏著塊係分別位於該些轉移件的該些凹槽中。
- 如請求項1所述之轉移載板,更包括一黏著層,該黏著層覆蓋該些轉移件與該基板的該上表面。
- 如請求項8所述之轉移載板,其中該黏著層於該第一表面上的厚度大於該黏著層於每一該轉移件的第二表面上的厚度。
- 一種晶粒載板,包括:一基板,具有一上表面;多個轉移件,設置於該基板的該上表面,每一該轉移件具有相對的一第一表面與一第二表面,該些轉移件分別以該些第一表面接觸該基板; 一黏著層,設置於該些轉移件的該些第二表面上;以及多個微型元件,位於該黏著層上,每一該微型元件係藉由該黏著層固著於對應的該些轉移件其中之一;其中,該基板的熱膨脹係數與該些轉移件的熱膨脹係數不相同,該些轉移件的熱膨脹係數與該些微型元件的熱膨脹係數的差值小於一預設門檻值。
- 如請求項10所述之晶粒載板,其中該些轉移件的熱導係數大於該基板的熱導係數的兩倍,小於該基板的熱導係數的五倍。
- 如請求項10所述之晶粒載板,其中該基板為藍寶石基板,該些轉移件的材料包括氮化鎵,該些微型元件為微型發光二極體且該些微型元件的材料包括氮化鎵。
- 如請求項10所述之晶粒載板,其中該些轉移件的熱膨脹係數與該基板的熱膨脹係數的差值不大於該基板的熱膨脹係數的百分之五十且不大於該基板的熱膨脹係數的百分之十。
- 如請求項10所述之晶粒載板,其中該黏著層具有多個分隔設置的黏著塊,每一該黏著塊位於該些轉移件的其中之一的該第二表面。
- 如請求項14所述之晶粒載板,其中每一該轉移件的該第二表面形成一凹槽,每一該黏著塊係位於該些轉移件的其中之一的該凹槽中。
- 如請求項10所述之晶粒載板,其中該黏著層覆蓋該基板的該上表面與該些轉移件。
- 如請求項16所述之晶粒載板,其中該黏著層於該第一表面上的厚度大於該黏著層於每一該轉移件的第二表面上的厚度。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107113115A TWI659486B (zh) | 2018-04-18 | 2018-04-18 | 轉移載板與晶粒載板 |
US16/387,395 US11705349B2 (en) | 2018-04-18 | 2019-04-17 | Transfer substrate for component transferring and micro LEDs carrying substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107113115A TWI659486B (zh) | 2018-04-18 | 2018-04-18 | 轉移載板與晶粒載板 |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI659486B TWI659486B (zh) | 2019-05-11 |
TW201944512A true TW201944512A (zh) | 2019-11-16 |
Family
ID=67348133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107113115A TWI659486B (zh) | 2018-04-18 | 2018-04-18 | 轉移載板與晶粒載板 |
Country Status (2)
Country | Link |
---|---|
US (1) | US11705349B2 (zh) |
TW (1) | TWI659486B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110190014B (zh) * | 2019-06-10 | 2021-10-08 | 京东方科技集团股份有限公司 | 一种Micro-LED的转移方法 |
CN110739260B (zh) * | 2019-10-25 | 2023-08-11 | 京东方科技集团股份有限公司 | 一种转移基板和转移方法 |
CN113228243A (zh) * | 2019-12-03 | 2021-08-06 | 重庆康佳光电技术研究院有限公司 | 一种半导体装置巨量转移方法和系统 |
CN113690158A (zh) * | 2020-05-19 | 2021-11-23 | 成都辰显光电有限公司 | 转移基板和选择性拾取、彩色屏体制备及屏体修复方法 |
CN111599912B (zh) * | 2020-06-01 | 2020-11-24 | 广东工业大学 | 一种柔性可拉伸的Micro-LED巨量转移装置和方法 |
CN112967989A (zh) * | 2020-11-19 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 转移设备、其制作方法以及微元件的转移方法 |
CN113224218B (zh) * | 2020-12-30 | 2023-01-20 | 湖北长江新型显示产业创新中心有限公司 | 一种显示面板及制作方法、显示装置 |
CN116721955B (zh) * | 2023-08-07 | 2023-10-24 | 山东汉芯科技有限公司 | 一种芯片加工用封胶输送装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8518204B2 (en) * | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
DE102012206289B4 (de) * | 2012-04-17 | 2016-02-25 | Forschungsverbund Berlin E.V. | Halbleiterbauelement-Verbundstruktur mit Wärmeableitstruktur und dazugehöriges Herstellungsverfahren |
US9153548B2 (en) * | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
US9550353B2 (en) * | 2014-07-20 | 2017-01-24 | X-Celeprint Limited | Apparatus and methods for micro-transfer-printing |
TWI557831B (zh) * | 2015-05-15 | 2016-11-11 | 友達光電股份有限公司 | 微組件的傳送方法 |
WO2017008254A1 (en) * | 2015-07-14 | 2017-01-19 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
US20170215280A1 (en) * | 2016-01-21 | 2017-07-27 | Vuereal Inc. | Selective transfer of micro devices |
WO2018038153A1 (ja) * | 2016-08-24 | 2018-03-01 | 東レエンジニアリング株式会社 | 実装方法および実装装置 |
US10854779B2 (en) * | 2016-11-07 | 2020-12-01 | Goertek. Inc | Micro-LED transfer method and manufacturing method |
-
2018
- 2018-04-18 TW TW107113115A patent/TWI659486B/zh active
-
2019
- 2019-04-17 US US16/387,395 patent/US11705349B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20190326143A1 (en) | 2019-10-24 |
TWI659486B (zh) | 2019-05-11 |
US11705349B2 (en) | 2023-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI659486B (zh) | 轉移載板與晶粒載板 | |
US10290622B2 (en) | Method for expanding spacings in light-emitting element array | |
TWI660448B (zh) | 微型元件結構 | |
TWI689105B (zh) | 光電半導體戳記及其製造方法、與光電半導體裝置 | |
CN110391165B (zh) | 转移载板与晶粒载板 | |
TWI666759B (zh) | 複合微組裝方法、裝置及設備 | |
WO2018032621A1 (zh) | 微元件的转移方法、装置及电子设备 | |
US10283684B2 (en) | Light emitting device and manufacturing method thereof | |
WO2019013120A1 (ja) | 表示装置の製造方法、チップ部品の転写方法、および転写部材 | |
CN109962082A (zh) | 电子封装单元与其制造方法及电子装置 | |
US20190074206A1 (en) | Target substrate with micro semiconductor structures | |
JP2020043209A (ja) | マイクロledアレイの製造方法、及びマイクロledディスプレイの製造方法、並びにマイクロledアレイ、及びマイクロledディスプレイ | |
KR20180127045A (ko) | 전사 부재를 이용한 전자 소자의 적층 구조 및 상기 전자 소자의 제조 방법 | |
TW201901846A (zh) | 半導體模組及其製造方法 | |
TWI591783B (zh) | 晶片封裝體及其製造方法 | |
JP2008047920A5 (zh) | ||
TWI677975B (zh) | 載板結構及微型元件結構 | |
TWI662594B (zh) | 軟性基板及線路結構及其製造方法 | |
US20130020607A1 (en) | Led module and method for manufacturing the same | |
TWI755470B (zh) | 導電薄膜、光電半導體裝置及其製造方法 | |
TW202125745A (zh) | 電子裝置及其製造方法 | |
CN111192869A (zh) | 基板和显示设备 | |
JP2019204842A5 (zh) | ||
TW202404150A (zh) | 製造半導體裝置的方法 | |
TWI777435B (zh) | 微型發光二極體載板 |