CN113228243A - 一种半导体装置巨量转移方法和系统 - Google Patents

一种半导体装置巨量转移方法和系统 Download PDF

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Publication number
CN113228243A
CN113228243A CN201980004188.8A CN201980004188A CN113228243A CN 113228243 A CN113228243 A CN 113228243A CN 201980004188 A CN201980004188 A CN 201980004188A CN 113228243 A CN113228243 A CN 113228243A
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China
Prior art keywords
semiconductor device
transfer
substrate
adhesive layer
bulk
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Pending
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CN201980004188.8A
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汪楷伦
许时渊
洪温振
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Publication of CN113228243A publication Critical patent/CN113228243A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

一种半导体装置的巨量转移方法和系统，其中方法包括：提供形成于原生基板(100)的半导体装置(200)；提供涂布有黏着层(30)的中转基板(10)，黏着层(30)的粘性与温度大小成正比；将半导体装置(200)远离原生基板(100)的一侧与黏着层(30)粘贴以将半导体装置(200)粘贴于黏着层(30)；从半导体装置(200)剥离原生基板(100)，且在剥离过程中黏着层(30)温度增加；利用转移装置(20)抓取半导体装置(200)以使半导体装置(200)从中转基板(10)剥离；利用转移装置(20)将半导体装置(200)转移至目标基板(300)，以将半导体装置(200)安装于目标基板(300)。

Description

PCT国内申请，说明书已公开。

Claims (8)

  1. PCT国内申请，权利要求书已公开。
CN201980004188.8A 2019-12-03 2019-12-03 一种半导体装置巨量转移方法和系统 Pending CN113228243A (zh)

Applications Claiming Priority (1)

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PCT/CN2019/122819 WO2021109010A1 (zh) 2019-12-03 2019-12-03 一种半导体装置巨量转移方法和系统

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CN113228243A true CN113228243A (zh) 2021-08-06

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WO (1) WO2021109010A1 (zh)

Citations (7)

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US20180053751A1 (en) * 2015-10-20 2018-02-22 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-led
CN109817767A (zh) * 2018-12-21 2019-05-28 南京中电熊猫平板显示科技有限公司 一种微型器件及其制作方法
CN109860157A (zh) * 2017-11-29 2019-06-07 财团法人工业技术研究院 半导体结构、发光装置及其制造方法
CN110034059A (zh) * 2017-12-19 2019-07-19 錼创显示科技股份有限公司 载板结构及微型元件结构
CN110148655A (zh) * 2019-05-21 2019-08-20 北京易美新创科技有限公司 微型led芯片巨量转移方法
US20190326143A1 (en) * 2018-04-18 2019-10-24 PlayNitride Inc. Transfer substrate for component transferring and micro leds carrying substrate
CN110518098A (zh) * 2019-09-26 2019-11-29 京东方科技集团股份有限公司 一种微型发光二极管芯片的巨量转移方法及系统

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Publication number Priority date Publication date Assignee Title
TWI778528B (zh) * 2016-06-10 2022-09-21 美商應用材料股份有限公司 微型裝置的無遮罩並行取放轉印
KR102123348B1 (ko) * 2017-09-28 2020-06-16 시바우라 메카트로닉스 가부시끼가이샤 소자 실장 장치, 소자 실장 방법 및 소자 실장 기판 제조 방법
CN110391165B (zh) * 2018-04-18 2021-09-14 英属开曼群岛商镎创科技股份有限公司 转移载板与晶粒载板
CN109887867B (zh) * 2019-03-08 2021-03-09 京东方科技集团股份有限公司 一种微型器件转移装置和微型器件转移方法
CN110034224A (zh) * 2019-04-26 2019-07-19 中国科学院长春光学精密机械与物理研究所 一种基于条形Micro-LED的转印方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180053751A1 (en) * 2015-10-20 2018-02-22 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-led
CN109860157A (zh) * 2017-11-29 2019-06-07 财团法人工业技术研究院 半导体结构、发光装置及其制造方法
CN110034059A (zh) * 2017-12-19 2019-07-19 錼创显示科技股份有限公司 载板结构及微型元件结构
US20190326143A1 (en) * 2018-04-18 2019-10-24 PlayNitride Inc. Transfer substrate for component transferring and micro leds carrying substrate
CN109817767A (zh) * 2018-12-21 2019-05-28 南京中电熊猫平板显示科技有限公司 一种微型器件及其制作方法
CN110148655A (zh) * 2019-05-21 2019-08-20 北京易美新创科技有限公司 微型led芯片巨量转移方法
CN110518098A (zh) * 2019-09-26 2019-11-29 京东方科技集团股份有限公司 一种微型发光二极管芯片的巨量转移方法及系统

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