WO2021102659A1 - 一种微器件转移装置及方法 - Google Patents

一种微器件转移装置及方法 Download PDF

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WO2021102659A1
WO2021102659A1 PCT/CN2019/120761 CN2019120761W WO2021102659A1 WO 2021102659 A1 WO2021102659 A1 WO 2021102659A1 CN 2019120761 W CN2019120761 W CN 2019120761W WO 2021102659 A1 WO2021102659 A1 WO 2021102659A1
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thermal expansion
positive
negative thermal
micro
viscous polymer
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PCT/CN2019/120761
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English (en)
French (fr)
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钟光韦
伍凯义
杨然翔
江仁杰
沈佳辉
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重庆康佳光电技术研究院有限公司
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Priority to CN201980002742.9A priority Critical patent/CN110998822B/zh
Priority to PCT/CN2019/120761 priority patent/WO2021102659A1/zh
Publication of WO2021102659A1 publication Critical patent/WO2021102659A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes

Definitions

  • the present invention relates to the field of LEDs, in particular to a micro device transfer device and method.
  • Micro-LED Micro Light Emitting Diode
  • OLED Organic Light Emitting Diode
  • Micro-LED technology the LED structure design is thinned, miniaturized, and arrayed, and its size is only about 1-10 ⁇ m.
  • the biggest advantage of Micro-LED comes from the micron-level pitch. Each pixel (pixel) can be addressed and controlled and driven by a single point to emit light. It has a long life and a wide range of applications. But the bottleneck restricting the development of Micro-LED display technology mainly includes massive transfer technology. Mass transfer technology, that is, how to transfer a large number of micro-scale Micro-LED dies to a large-size transfer board, is an important technology for the mass production of Micro-LED products.
  • the existing chip transfer method includes the following steps: after transferring the chips grown on the wafer through a temporary carrier A coated with a viscous polymer material A, the temporary carrier B coated with a viscous polymer material B is The temporary carrier A is pressed together, and since the viscosity of the viscous polymer material B is greater than the viscosity of the polymer material A, the chip body can be moved from the temporary carrier A to the temporary carrier B.
  • the defect of the chip transfer method is that the chip pitch after the transfer will be determined by the chip pitch on the temporary carrier A made by the chip process. Therefore, to change the chip pitch for massive transfer, the chip process needs to be changed. More time-consuming.
  • the purpose of the present invention is to provide a micro-device transfer device and method, which aims to solve the problem that the prior art cannot efficiently change the spacing of the micro-devices.
  • a micro device transfer device which includes a temperature control device, a positive and negative thermal expansion material layer provided on the temperature control device, and a side of the positive and negative thermal expansion material layer away from the temperature control device is provided with a uniform arrangement
  • the convex transfer head is coated with a first viscous polymer material on a side away from the positive and negative thermal expansion material layer, and the convex transfer head passes through the first viscous polymer material Bonding and grasping micro devices, the temperature control device changes the distance between the bump transfer heads by performing temperature control on the positive and negative thermal expansion material layers, and grasps micro devices with different pitches.
  • the protrusion transfer head is integrally formed with the positive and negative thermal expansion material layer, and the material of the protrusion transfer head is the same as the material of the positive and negative thermal expansion material layer.
  • the material of the positive and negative thermal expansion material layer is one of metal material or plastic material.
  • the metal material is one of aluminum, silver, lead, iron, copper, magnesium, manganese, gold or platinum.
  • the plastic material is one of nylon, PMMA, PVC, PP, PE, PBT or POM.
  • the linear thermal expansion coefficient of the first viscous polymer material is smaller than the linear thermal expansion coefficient of the positive and negative thermal expansion material layer material.
  • the first viscous polymer material is one of polydimethylsiloxane, organosilicone adhesive or epoxy resin.
  • the epoxy resin is bisphenol A epoxy resin, bisphenol F epoxy resin, alicyclic epoxy resin, aliphatic epoxy resin, cyanuric acid ring One of oxy resin or hydantoin epoxy resin.
  • the temperature change range of the temperature control device is 0-100°C.
  • the temperature control device includes a power source and a graphene layer connected to the power source, and the positive and negative thermal expansion material layer is disposed on the surface of the graphene layer.
  • the micro device is an LED chip.
  • a method for transferring a micro device based on the device for transferring a micro device which comprises the following steps:
  • the first viscous polymer material on the protruding transfer head viscously grabs micro devices with a preset pitch from the carrier.
  • the step of transferring the LED chips cut on the wafer to the carrier board includes:
  • the LED chips that have been diced on the wafer are transferred to the carrier through the second viscous polymer material.
  • the second viscous polymer material is one of polydimethylsiloxane, organosilicone adhesive or epoxy resin.
  • the method for transferring a micro device wherein the viscosity of the first viscous polymer material is greater than the viscosity of the second viscous polymer material, when the first viscous polymer material and the second viscous polymer material are formed
  • the composition of the material is the same, by adjusting the concentration of each component in the first viscous polymer material and the second viscous polymer material, the viscosity of the first viscous polymer material is greater than that of the second viscous polymer material. Viscosity.
  • the method for transferring a micro device wherein the step of performing temperature control processing on the positive and negative thermal expansion material layer by a temperature control device so that the distance between the convex adapters on the positive and negative thermal expansion material layer reaches a preset distance include:
  • the temperature control device is used to cool the positive and negative thermal expansion material layer, so that the distance between the convex adapters on the positive and negative thermal expansion material layer is reduced, so as to achieve a preset distance.
  • the step of viscously grabbing micro-devices with a predetermined pitch from the carrier through the first viscous polymer material on the bump transfer head includes:
  • the convex transfer head is aligned with the micro devices on the carrier board and pressed together, so that the micro devices with the same distance between the carrier board and the convex adapter are transferred to the convex transfer head.
  • the present invention provides a micro device transfer device, which includes a temperature control device and a positive and negative thermal expansion material layer provided on the upper surface of the temperature control device.
  • the positive and negative thermal expansion material layer is processed by the temperature control device.
  • the temperature control can change the distance between the bump transfer heads on the positive and negative thermal expansion material layer, so that the micro devices with different pitches can be transferred to the micro device transfer device.
  • Figure 1 is a flow chart of a conventional chip transfer method.
  • Fig. 2 is a schematic structural diagram of a micro device transfer apparatus in an embodiment of the present invention.
  • Fig. 3 is a flow chart of a method for transferring a micro device according to the present invention.
  • FIG. 4 is a schematic diagram of the change in the distance between the protruding adapters on the positive and negative thermal expansion material layer after the heating treatment is performed on the positive and negative thermal expansion material layer according to the embodiment of the present invention.
  • FIG. 5 is a schematic diagram of the change in the pitch of the protruding adapters on the positive and negative thermal expansion material layer after the temperature reduction treatment is performed on the positive and negative thermal expansion material layer according to the embodiment of the present invention.
  • the present invention provides a micro-device transfer device and method.
  • the present invention will be described in further detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, but not used to limit the present invention.
  • the existing chip transfer method includes the following steps: after transferring the chips grown on the wafer through a temporary carrier A coated with a viscous polymer material A, the chip is coated with a viscous polymer material B The temporary carrier B and the temporary carrier A are pressed together. Since the viscosity of the viscous polymer material B is greater than the viscosity of the polymer material A, the chip body can be moved from the temporary carrier A to the temporary carrier B.
  • the defect of the chip transfer method shown in Figure 1 is that the chip pitch after the transfer will be determined by the chip pitch during the chip process design, and in order to increase the chip utilization rate, the chips are usually designed to be tighter in the chip process design. Therefore, if you want to change the chip pitch of the massive transfer, you need to make changes from the chip process, which is more time-consuming.
  • an embodiment of the present invention provides a micro device transfer device, as shown in FIG. 2, which includes a temperature control device 10, and a positive and negative thermal expansion material layer 20 disposed on the temperature control device 10 ,
  • the positive and negative thermal expansion material layer 20 is provided with a plurality of convex transfer heads 30 evenly arranged on one side away from the temperature control device 10, and the convex transfer heads 30 are far away from the positive and negative thermal expansion material layer 20.
  • One side is coated with a first viscous polymer material 40, the protruding transfer head 30 is bonded to grasp the micro device through the first viscous polymer material 40, and the temperature control device 10 is thermally expanded by the positive and negative
  • the material layer 20 is temperature-controlled so that the distance between the bump transfer heads 30 is changed, and micro devices with different distances are grasped.
  • the micro device is one of an LED chip, a Micro LED chip, an OLED chip, or a mini LED chip, but it is not limited thereto.
  • the temperature control device 10 is used to control the temperature of the positive and negative thermal expansion material layer 20, and the temperature on the positive and negative thermal expansion material layer 20 can be changed.
  • the distance between the bump transfer head 30 can realize the rapid and efficient transfer of LED chips with different pitches to the bump transfer head 30 of the micro device transfer device; this embodiment does not need to improve the initial LED chip process, so The LED chips on the wafer can be closely arranged to maintain the highest utilization of LED chips.
  • the temperature control of the positive and negative thermal expansion material layer 20 by the temperature control device 10 causes the pitch of the bump transfer head 30 to change. It is possible to grasp LED chips with different pitches.
  • the protrusion transfer head 30 and the positive and negative thermal expansion material layer 20 are integrally formed, and the material of the protrusion transfer head 30 is the same as the material of the positive and negative thermal expansion material layer 20 .
  • the positive and negative thermal expansion material layer 20 can be prepared by coating and film formation in advance, and then the pattern is defined by the yellow light process, and then the protrusion transfer is etched on the surface of the positive and negative thermal expansion material layer 20 by etching. Head 30.
  • the material of the positive and negative thermal expansion material layer is one of a metal material or a plastic material, but it is not limited thereto.
  • the positive and negative thermal expansion material layer and the bump transfer head can be prepared by electroforming; when the material of the positive and negative thermal expansion material layer is a plastic material, search The positive and negative thermal expansion material layer and the raised transfer head can be prepared by injection molding.
  • the metal material is one of aluminum, silver, lead, iron, copper, magnesium, manganese, gold or platinum, but not limited to this;
  • the plastic material is nylon, PMMA, PVC, PP, PE, One of PBT or POM, but not limited to this.
  • aluminum is also used as an example of the positive and negative thermal expansion material layer material.
  • the rectangular aluminum layer with a set area of 10mm*10mm is provided with equidistant LED chips, and the rectangular aluminum layer is separated from the rectangular aluminum layer by a temperature control device.
  • equidistant LED chips are arranged on a rectangular iron layer with a set area of 10mm*10mm, and the rectangular aluminum layer is replaced by a temperature control device.
  • Table 1 shows the linear thermal expansion coefficients of different metals
  • the linear thermal expansion coefficient of the first viscous polymer material should be less than the linear thermal expansion of the positive and negative thermal expansion material layer material. coefficient.
  • the first viscous polymer material is one of polydimethylsiloxane, silicone adhesive or epoxy resin, but it is not limited thereto.
  • the epoxy resin is bisphenol A epoxy resin, bisphenol F epoxy resin, cycloaliphatic epoxy resin, aliphatic epoxy resin, cyanuric epoxy resin or hydantoin epoxy resin. A kind of resin.
  • the temperature change range of the temperature control device is 0-100°C. Within this temperature range, it is possible to control the distance between the convex adapters on the positive and negative thermal expansion material layer, and also to adjust the distance between the protruding adapters on the positive and negative thermal expansion material layer. Avoid affecting the bonding performance of the first viscous polymer material.
  • the temperature control device includes a power source and a graphene layer connected to the power source, and the positive and negative thermal expansion material layer is disposed on the surface of the graphene layer.
  • the thermal conductivity of pure, defect-free single-layer graphene is as high as 5300W/mK, which is the carbon material with the highest thermal conductivity so far.
  • This embodiment uses a graphene layer as The thermal conductive layer can accurately and efficiently control the temperature of the positive and negative thermal expansion material layer.
  • a micro device transfer method based on the micro device transfer device is also provided, as shown in FIG. 3, which includes the steps:
  • S20 Perform temperature control processing on the positive and negative thermal expansion material layer by the temperature control device, so that the distance between the convex adapters on the positive and negative thermal expansion material layer reaches a preset distance;
  • the first viscous polymer material on the protruding transfer head viscously grasps micro devices with a predetermined pitch from the carrier board.
  • the temperature control of the positive and negative thermal expansion material layer is performed by the temperature control device, and the distance between the bump transfer heads on the positive and negative thermal expansion material layer can be changed. Therefore, the LED chips with different pitches can be quickly and efficiently transferred to the bump transfer head of the micro device transfer device; this embodiment does not need to improve the initial LED chip process, and the LED chips on the wafer can be The LED chips are closely arranged to maintain the highest utilization rate of LED chips, and the temperature control of the positive and negative thermal expansion material layer by the temperature control device causes the pitch of the bump transfer head to change, so that LED chips with different pitches can be grasped.
  • the step of transferring the LED chips that have been diced on the wafer to a carrier includes: coating a second viscous polymer material on the carrier, and the first viscous polymer material is The viscosity is greater than the viscosity of the second viscous polymer material; the LED chips cut on the wafer are transferred to the carrier through the second viscous polymer material.
  • the viscosity of the second viscous polymer material should be less than that of the first viscous polymer material ⁇ viscosity.
  • the second viscous polymer material is one of polydimethylsiloxane, silicone adhesive or epoxy resin, but it is not limited thereto.
  • the concentration of the first viscous polymer material and the second viscous polymer material when the first viscous polymer material is the same as the second viscous polymer material, by adjusting the concentration of the first viscous polymer material and the second viscous polymer material, the The viscosity of the first viscous polymer material is greater than the viscosity of the second viscous polymer material.
  • the positive and negative thermal expansion material layer is heated by a temperature control device to increase the distance between the protruding adapters on the positive and negative thermal expansion material layer, thereby achieving a preliminary The spacing is set so that the first viscous polymer material is used to viscously grasp the LED chips with the same spacing as the protruding adapter from the carrier board.
  • the temperature control device is used to cool the positive and negative thermal expansion material layer, so that the distance between the convex adapters on the positive and negative thermal expansion material layer is reduced, so as to achieve a preliminary effect.
  • the spacing is set so that the first viscous polymer material is used to viscously grasp the LED chips with the same spacing as the protruding adapter from the carrier board.
  • the convex transfer head is aligned with the LED chip on the carrier and pressed together, because the viscosity of the first viscous polymer material on the convex transfer head is greater than that of the carrier.
  • the second viscous polymer material has the viscosity of the second viscous polymer material, so after the pressing process, the LED chips with the same distance between the carrier board and the bump adapter can be transferred to the bump transfer head.
  • the present invention provides a micro device transfer device, which includes a temperature control device and a positive and negative thermal expansion material layer provided on the upper surface of the temperature control device.
  • the positive and negative thermal expansion material is treated by the temperature control device.
  • the temperature of the layer is controlled, and the distance between the bump transfer heads on the positive and negative thermal expansion material layer can be changed, so that micro devices with different pitches can be transferred to the micro device transfer device.

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Abstract

一种微器件转移装置及方法，其中，所述装置包括温控装置（10），设置在所述温控装置（10）上的正负热膨胀材料层（20），所述正负热膨胀材料层（20）远离所述温控装置（10）的一侧设置有均匀排布的多个凸起转移头（30），所述凸起转移头（30）远离所述正负热膨胀材料层（20）的一侧涂覆有第一粘性高分子材料（40），所述凸起转移头（30）通过所述第一粘性高分子材料（40）粘合抓取微器件，所述温控装置（10）通过对所述正负热膨胀材料层（20）进行温控使得所述凸起转移头（30）间距发生变化，抓取不同间距的微器件。通过所述温控装置（10）对所述正负热膨胀材料层（20）进行温度控制，可改变位于所述正负热膨胀材料层（20）上的凸起转移头（30）间距，从而可实现将不同间距的微器件转移至所述微器件转移装置上。

Description

一种微器件转移装置及方法 技术领域
本发明涉及LED领域，尤其涉及一种微器件转移装置及方法。
背景技术
Micro-LED(微型发光二极管)是新一代显示技术，比现有的OLED(有机发光二极管)技术亮度更高、发光效率更好、但功耗更低。Micro-LED技术，将LED结构设计进行薄膜化、微小化、阵列化，其尺寸仅在1-10μm等级左右。Micro-LED最大的优势来自于微米等级的间距，每一点像素(pixel)都能定址控制及单点驱动发光、寿命长、应用范畴广。但限制Micro-LED显示技术发展的瓶颈主要包括巨量转移技术。巨量转移技术即如何将大量微小尺度的Micro-LED晶粒转移到大尺寸的转移板上，是Micro-LED产品量产化的重要技术。
现有芯片转移方法包括以下步骤：通过涂覆有粘性高分子材料A的暂时载板A将生长在晶圆上的芯片转移过来之后，将涂覆有粘性高分子材料B的暂时载板B与暂时载板A压合，由于粘性高分子材料B的粘度大于高分子材料A的粘度，因此可将芯片本体从暂时载板A移至暂时载板B。然而，所述芯片转移方法的缺陷在于，转移后的芯片间距会由芯片工艺制作的暂时载板A上的芯片间距决定，因此若要更改巨量转移的芯片间距，需要从芯片工艺做更改，较为费时。
因此，现有技术还有待于改进。
发明内容
鉴于上述现有技术的不足，本发明的目的在于提供一种微器件转移装置及方法，旨在解决现有技术无法高效更改微器件间距的问题。
本发明的技术方案如下：
一种微器件转移装置，其中，包括温控装置，设置在所述温控装置上的正负热膨胀 材料层，所述正负热膨胀材料层远离所述温控装置的一侧设置有均匀排布的多个凸起转移头，所述凸起转移头远离所述正负热膨胀材料层的一侧涂覆有第一粘性高分子材料，所述凸起转移头通过所述第一粘性高分子材料粘合抓取微器件，所述温控装置通过对所述正负热膨胀材料层进行温控使得所述凸起转移头间距发生变化，抓取不同间距的微器件。
所述的微器件转移装置，其中，所述凸起转移头与所述正负热膨胀材料层一体成型，所述凸起转移头材料与所述正负热膨胀材料层材料相同。
所述的微器件转移装置，其中，所述正负热膨胀材料层材料为金属材料或塑料材料中的一种。
所述的微器件转移装置，其中，所述金属材料为铝、银、铅、铁、铜、镁、锰、金或铂中的一种。
所述的微器件转移装置，其中，所述塑料材料为尼龙、PMMA、PVC、PP、PE、PBT或POM中的一种。
所述的微器件转移装置，其中，所述第一粘性高分子材料的线性热膨胀系数小于所述正负热膨胀材料层材料的线性热膨胀系数。
所述的微器件转移装置，其中，所述第一粘性高分子材料为聚二甲基硅氧烷、有机硅胶黏剂或环氧树脂中的一种。
所述的微器件转移装置，其中，所述环氧树脂为双酚A型环氧树脂、双酚F型环氧树脂、脂环族环氧树脂、脂肪族环氧树脂、三聚氰酸环氧树脂或海因环氧树脂中的一种。
所述的微器件转移装置，其中，所述温控装置的温度变化范围为0-100℃。
所述的微器件转移装置，其中，所述温控装置包括电源以及与所述电源连接的石墨烯层，所述正负热膨胀材料层设置在所述石墨烯层表面。
所述的微器件转移装置，其中，所述微器件为LED芯片。
一种基于所述微器件转移装置的微器件转移方法，其中，包括步骤：
将晶圆上切割完成的微器件转移至载板上；
通过温控装置对所述正负热膨胀材料层进行温控处理，使位于所述正负热膨胀材料 层上的凸起转接头间距达到预设间距；
通过凸起转移头上的第一粘性高分子材料从所述载板上粘性抓取预设间距的微器件。
所述的微器件转移方法，其中，所述将晶圆上切割完成的LED芯片转移至载板上的步骤包括：
在所述载板上涂覆第二粘性高分子材料；
通过所述第二粘性高分子材料将所述晶圆上切割完成的LED芯片转移至所述载板上。
所述的微器件转移方法，其中，所述第二粘性高分子材料为聚二甲基硅氧烷、有机硅胶黏剂或环氧树脂中的一种。
所述的微器件转移方法，其中，所述第一粘性高分子材料的粘度大于所述第二粘性高分子材料的粘度，当形成所述第一粘性高分子材料与所述第二粘性高分子材料的成分相同时，通过调整所述第一粘性高分子材料和第二粘性高分子材料中各成分的浓度，使所述第一粘性高分子材料的粘度大于所述第二粘性高分子材料的粘度。
所述微器件转移方法，其中，所述通过温控装置对所述正负热膨胀材料层进行温控处理，使位于所述正负热膨胀材料层上的凸起转接头间距达到预设间距的步骤包括：
通过温控装置对所述正负热膨胀材料层进行加热处理，使位于所述正负热膨胀材料层上的凸起转接头间距增大，从而达到预设间距；
或，通过温控装置对所述正负热膨胀材料层进行降温处理，使位于所述正负热膨胀材料层上的凸起转接头间距减小，从而达到预设间距。
所述微器件转移方法，其中，所述通过凸起转移头上的第一粘性高分子材料从所述载板上粘性抓取预设间距的微器件的步骤包括：
将所述凸起转移头对齐所述载板上的微器件并进行压合，使所述载板上与所述凸起转接头间距相同的微器件转移至所述凸起转移头上。
有益效果：本发明提供一种微器件转移装置，其包括温控装置以及设置在所述温控装置上表面的正负热膨胀材料层，通过所述温控装置对所述正负热膨胀材料层进行温 度控制，可改变位于所述正负热膨胀材料层上的凸起转移头间距，从而可实现将不同间距的微器件转移至所述微器件转移装置上。
附图说明
图1为现有芯片转移方法的流程图。
图2为本发明实施例中一种微器件转移装置的结构示意图。
图3为本发明一种微器件转移方法的流程图。
图4为本发明实施例对正负热膨胀材料层进行加热处理后，位于所述正负热膨胀材料层上的凸起转接头间距变化示意图。
图5为本发明实施例对正负热膨胀材料层进行降温处理后，位于所述正负热膨胀材料层上的凸起转接头间距变化示意图。
具体实施方式
本发明提供一种微器件转移装置及方法，为使本发明的目的、技术方案及效果更加清楚、明确，以下对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
如图1所示，现有芯片转移方法包括以下步骤：通过涂覆有粘性高分子材料A的暂时载板A将生长在晶圆上的芯片转移过来之后，将涂覆有粘性高分子材料B的暂时载板B与暂时载板A压合，由于粘性高分子材料B的粘度大于高分子材料A的粘度，因此可将芯片本体从暂时载板A移至暂时载板B。然而，如图1所示芯片转移方法的缺陷在于，转移后的芯片间距会由芯片工艺设计时的芯片间距决定，而为了增加芯片利用率通常会在芯片工艺的设计上将芯片设计为较紧密的排列，因此若要更改巨量转移的芯片间距，需要从芯片工艺做更改，较为费时。
基于现有技术所存在的问题，本发明实施例提供一种微器件转移装置，如图2所示，其包括温控装置10，设置在所述温控装置10上的正负热膨胀材料层20，所述正负热膨胀材料层20远离所述温控装置10的一侧设置有均匀排布的多个凸起转移头30，所述凸 起转移头30远离所述正负热膨胀材料层20的一侧涂覆有第一粘性高分子材料40，所述凸起转移头30通过所述第一粘性高分子材料40粘合抓取微器件，所述温控装置10通过对所述正负热膨胀材料层20进行温控使得所述凸起转移头30间距发生变化，抓取不同间距的微器件。
在一些实施方式中，所述微器件为LED芯片、Micro LED芯片、OLED芯片或mini LED芯片中的一种，但不限于此。
在本实施例中，以所述微器件为LED芯片为例，通过所述温控装置10对所述正负热膨胀材料层20进行温度控制，可改变位于所述正负热膨胀材料层20上的凸起转移头30间距，从而可实现将不同间距的LED芯片快速高效地转移至所述微器件转移装置的凸起转移头30上；本实施例不需要对最初的LED芯片工艺做改进，所述晶圆上的LED芯片可紧密排列以保持最高的LED芯片利用率，通过所述温控装置10对所述正负热膨胀材料层20进行温控使得所述凸起转移头30间距发生变化，便可实现抓取不同间距的LED芯片。
在一些实施方式中，如图2所示，所述凸起转移头30与所述正负热膨胀材料层20一体成型，所述凸起转移头30材料与所述正负热膨胀材料层20材料相同。本实施例中，可预先通过涂覆成膜制得正负热膨胀材料层20，然后通过黄光工艺定义图形，再通过蚀刻处理在所述正负热膨胀材料层20表面蚀刻出所述凸起转移头30。
在一些实施方式中，所述正负热膨胀材料层材料为金属材料或塑料材料中的一种，但不限于此。当所述正负热膨胀材料层材料为金属材料时，所述正负热膨胀材料层和凸起转移头可通过电铸方式制备而成；当所述正负热膨胀材料层材料为塑料材料时，搜书正负热膨胀材料层和凸起转移头可通过注塑成型的方式制备而成。
作为举例，所述金属材料为铝、银、铅、铁、铜、镁、锰、金或铂中的一种，但不限于此；所述塑料材料为尼龙、PMMA、PVC、PP、PE、PBT或POM中的一种，但不限于此。
在一些实施方式中，以铝作为正负热膨胀材料层材料为例，设定20℃条件下面积为10mm*10mm的矩形铝层上设置有等距的LED芯片，通过温控装置将所述矩形铝层由 20℃加热至70℃，将其温度变化量50乘以铝的线性热膨胀系数23.2，即50*23.2＝1160um＝1.16mm，因此所述10mm*10mm的矩形铝层在经过所述温控装置加热后变大为11.16mm*11.16mm的矩形铝层，此时位于所述矩形铝层表面的LED芯片间距也会发生相应的变化。
在一些实施方式中，同样以铝作为正负热膨胀材料层材料为例，设定面积为10mm*10mm的矩形铝层上设置有等距的LED芯片，通过温控装置将所述矩形铝层由30℃降温至10℃，将其温度变化量20乘以铝的线性热膨胀系数23.2，即20*23.2＝464um＝0.464mm，因此所述10mm*10mm的矩形铝层在经过所述温控装置降温后缩小为9.536mm*9.536mm的矩形铝层，此时位于所述矩形铝层表面的LED芯片间距也会发生相应的变化。
在一些实施方式中，以铁作为正负热膨胀材料层材料为例，设定20℃条件下面积为10mm*10mm的矩形铁层上设置有等距的LED芯片，通过温控装置将所述矩形铝层由20℃加热至70℃，将其温度变化量50乘以铁线性热膨胀系数12.2，即50*12.2＝610um＝0.61mm，因此所述10mm*10mm的矩形铁层在经过所述温控装置加热后变大为10.61mm*10.61mm的矩形铁层，此时位于所述矩形铁层表面的LED芯片间距也会发生相应的变化。
在一些实施方式中，同样以铁作为正负热膨胀材料层材料为例，设定面积为10mm*10mm的矩形铁层上设置有等距的LED芯片，通过温控装置将所述矩形铝层由30℃降温至10℃，将其温度变化量50乘以铁的线性热膨胀系数12.2，即20*12.2＝244um＝0.244mm，因此所述10mm*10mm的矩形铁层在经过所述温控装置降温后缩小为9.756mm*9.756mm的矩形铁层，此时位于所述矩形铁层表面的LED芯片间距也会发生相应的变化。
表1为不同金属的线性热膨胀系数
金属名称 元素符号 线性热膨胀系数(1E-6/℃)
铝 Al 23.2
银 Ag 19.5
铅 Pb 29.3
铁 Fe 12.2
铜 Cu 17.5
镁 Mg 26.0
锰 Mn 23.0
金 Au 14.2
铂 Pt 9.0
不同的金属材料由于线性热膨胀系数不同，其在同样的温差范围内可发生不同的膨胀变化，从而可实现使位于所述正负热膨胀材料层表面的LED芯片间距发生相应的变化。
在一些实施方式中，为防止所述第一粘性高分子材料受温控装置的温控影响，所述第一粘性高分子材料的线性热膨胀系数应小于所述正负热膨胀材料层材料的线性热膨胀系数。
在一些实施方式中，所述第一粘性高分子材料为聚二甲基硅氧烷、有机硅胶黏剂或环氧树脂中的一种，但不限于此。作为举例，所述环氧树脂为双酚A型环氧树脂、双酚F型环氧树脂、脂环族环氧树脂、脂肪族环氧树脂、三聚氰酸环氧树脂或海因环氧树脂中的一种。
在一些实施方式中，所述温控装置的温度变化范围为0-100℃，在该温度范围内，既可实现对所述正负热膨胀材料层上的凸起转接头间距进行调控，又可避免影响所述第一粘性高分子材料的粘结性能。
在一些实施方式中，所述温控装置包括电源以及与所述电源连接的石墨烯层，所述正负热膨胀材料层设置在所述石墨烯层表面。本实施例中，由于石墨烯具有非常好的热传导性能，纯的无缺陷的单层石墨烯的导热系数高达5300W/mK，是目前为止导热系数最高的碳材料，本实施例采用石墨烯层作为导热层，能够精准高效地对所述正负热膨胀材料层进行温控。
在一些实施方式中，还提供一种基于所述微器件转移装置的微器件转移方法，如图3所示，其包括步骤：
S10、将晶圆上切割完成的微器件转移至载板上；
S20、通过温控装置对正负热膨胀材料层进行温控处理，使位于所述正负热膨胀材料层上的凸起转接头间距达到预设间距；
S30、通过凸起转移头上的第一粘性高分子材料从所述载板上粘性抓取预设间距的微器件。
本实施例以所述微器件为LED芯片为例，通过所述温控装置对所述正负热膨胀材料层进行温度控制，可改变位于所述正负热膨胀材料层上的凸起转移头间距，从而可实现将不同间距的LED芯片快速高效地转移至所述微器件转移装置的凸起转移头上；本实施例不需要对最初的LED芯片工艺做改进，所述晶圆上的LED芯片可紧密排列以保持最高的LED芯片利用率，通过所述温控装置对所述正负热膨胀材料层进行温控使得所述凸起转移头间距发生变化，便可实现抓取不同间距的LED芯片。
在一些实施方式中，所述将晶圆上切割完成的LED芯片转移至载板上的步骤包括：在所述载板上涂覆第二粘性高分子材料，所述第一粘性高分子材料的粘度大于所述第二粘性高分子材料的粘度；通过所述第二粘性高分子材料将所述晶元上切割完成的LED芯片转移至所述载板上。本实施例中，为便于后续将所述载板上的LED芯片转移至微器件转移装置的凸起转移头上，所述第二粘性高分子材料的粘度应小于所述第一粘性高分子材料的粘度。
在一些实施方式中，所述第二粘性高分子材料为聚二甲基硅氧烷、有机硅胶黏剂或环氧树脂中的一种，但不限于此。
在一些实施方式中，当所述第一粘性高分子材料与所述第二粘性高分子材料相同时，通过调整所述第一粘性高分子材料和第二粘性高分子材料的浓度，使所述第一粘性高分子材料的粘度大于所述第二粘性高分子材料的粘度。
在一些实施方式中，如图4所示，通过温控装置对所述正负热膨胀材料层进行加热处理，使位于所述正负热膨胀材料层上的凸起转接头间距增大，从而达到预设间距，便 于通过所述第一粘性高分子材料从所述载板上粘性抓取与所述凸起转接头间距相同的LED芯片。
在一些实施方式中，如图5所示，通过温控装置对所述正负热膨胀材料层进行降温处理，使位于所述正负热膨胀材料层上的凸起转接头间距减小，从而达到预设间距，便于通过所述第一粘性高分子材料从所述载板上粘性抓取与所述凸起转接头间距相同的LED芯片。
在一些实施方式中，将所述凸起转移头对齐所述载板上的LED芯片并进行压合，由于所述凸起转移头上的第一粘性高分子材料的粘度大于所述载板上的第二粘性高分子材料的粘度，因此在经过压合处理后可使所述载板上与所述凸起转接头间距相同的LED芯片转移至所述凸起转移头上。
综上所述，本发明提供一种微器件转移装置，其包括温控装置以及设置在所述温控装置上表面的正负热膨胀材料层，通过所述温控装置对所述正负热膨胀材料层进行温度控制，可改变位于所述正负热膨胀材料层上的凸起转移头间距，从而可实现将不同间距的微器件转移至所述微器件转移装置上。
应当理解的是，本发明的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本发明所附权利要求的保护范围。

Claims (17)

  1. 一种微器件转移装置，其特征在于，包括温控装置，设置在所述温控装置上的正负热膨胀材料层，所述正负热膨胀材料层远离所述温控装置的一侧设置有均匀排布的多个凸起转移头，所述凸起转移头远离所述正负热膨胀材料层的一侧涂覆有第一粘性高分子材料，所述凸起转移头通过所述第一粘性高分子材料粘合抓取微器件，所述温控装置通过对所述正负热膨胀材料层进行温控使得所述凸起转移头间距发生变化，抓取不同间距的微器件。
  2. 根据权利要求1所述的微器件转移装置，其特征在于，所述凸起转移头与所述正负热膨胀材料层一体成型，所述凸起转移头材料与所述正负热膨胀材料层材料相同。
  3. 根据权利要求1所述的微器件转移装置，其特征在于，所述正负热膨胀材料层材料为金属材料或塑料材料中的一种。
  4. 根据权利要求3所述的微器件转移装置，其特征在于，所述金属材料为铝、银、铅、铁、铜、镁、锰、金或铂中的一种。
  5. 根据权利要求3所述的微器件转移装置，其特征在于，所述塑料材料为尼龙、PMMA、PVC、PP、PE、PBT或POM中的一种。
  6. 根据权利要求1所述的微器件转移装置，其特征在于，所述第一粘性高分子材料的线性热膨胀系数小于所述正负热膨胀材料层材料的线性热膨胀系数。
  7. 根据权利要求6所述的微器件转移装置，其特征在于，所述第一粘性高分子材料为聚二甲基硅氧烷、有机硅胶黏剂或环氧树脂中的一种。
  8. 根据权利要求7所述的微器件转移装置，其特征在于，所述环氧树脂为双酚A型环氧树脂、双酚F型环氧树脂、脂环族环氧树脂、脂肪族环氧树脂、三聚氰酸环氧树脂或海因环氧树脂中的一种。
  9. 根据权利要求1所述的微器件转移装置，其特征在于，所述温控装置的温度变化范围为0-100℃。
  10. 根据权利要求1所述的微器件转移装置，其特征在于，所述温控装置包括电源以及与所述电源连接的石墨烯层，所述正负热膨胀材料层设置在所述石墨烯层表面。
  11. 根据权利要求1所述的微器件转移装置，其特征在于，所述微器件为LED芯 片。
  12. 一种基于权利要求1-11任一所述微器件转移装置的微器件转移方法，其特征在于，包括步骤：
    将晶圆上切割完成的微器件转移至载板上；
    通过温控装置对所述正负热膨胀材料层进行温控处理，使位于所述正负热膨胀材料层上的凸起转接头间距达到预设间距；
    通过凸起转移头上的第一粘性高分子材料从所述载板上粘性抓取预设间距的微器件。
  13. 根据权利要求12所述的微器件转移方法，其特征在于，所述将晶圆上切割完成的微器件转移至载板上的步骤包括：
    在所述载板上涂覆第二粘性高分子材料；
    通过所述第二粘性高分子材料将所述晶圆上切割完成的微器件转移至所述载板上。
  14. 根据权利要求13所述的微器件转移方法，其特征在于，所述第二粘性高分子材料为聚二甲基硅氧烷、有机硅胶黏剂或环氧树脂中的一种。
  15. 根据权利要求14所述的微器件转移方法，其特征在于，所述第一粘性高分子材料的粘度大于所述第二粘性高分子材料的粘度，当形成所述第一粘性高分子材料与所述第二粘性高分子材料的成分相同时，通过调整所述第一粘性高分子材料和第二粘性高分子材料中各成分的浓度，使所述第一粘性高分子材料的粘度大于所述第二粘性高分子材料的粘度。
  16. 据权利要求12所述微器件转移方法，其特征在于，所述通过温控装置对所述正负热膨胀材料层进行温控处理，使位于所述正负热膨胀材料层上的凸起转接头间距达到预设间距的步骤包括：
    通过温控装置对所述正负热膨胀材料层进行加热处理，使位于所述正负热膨胀材料层上的凸起转接头间距增大，从而达到预设间距；
    或，通过温控装置对所述正负热膨胀材料层进行降温处理，使位于所述正负热膨胀材料层上的凸起转接头间距减小，从而达到预设间距。
  17. 根据权利要求12所述微器件转移方法，其特征在于，所述通过凸起转移头上的第一粘性高分子材料从所述载板上粘性抓取预设间距的微器件的步骤包括：
    将所述凸起转移头对齐所述载板上的微器件并进行压合，使所述载板上与所述凸起转接头间距相同的微器件转移至所述凸起转移头上。
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