TW201941315A - Die mounting device and manufacturing method of semiconductor device for enhancing positioning precision - Google Patents

Die mounting device and manufacturing method of semiconductor device for enhancing positioning precision Download PDF

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TW201941315A
TW201941315A TW108105393A TW108105393A TW201941315A TW 201941315 A TW201941315 A TW 201941315A TW 108105393 A TW108105393 A TW 108105393A TW 108105393 A TW108105393 A TW 108105393A TW 201941315 A TW201941315 A TW 201941315A
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bonding head
target
substrate
die
crystal
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TW108105393A
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Chinese (zh)
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TWI702660B (en
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小橋英晴
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日商捷進科技有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67282Marking devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312Aligning
    • H01L2224/83121Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/83122Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors by detecting inherent features of, or outside, the semiconductor or solid-state body
    • H01L2224/83129Shape or position of the other item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832Applying energy for connecting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02TCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00Road transport of goods or passengers
    • Y02T10/10Internal combustion engine [ICE] based vehicles
    • Y02T10/12Improving ICE efficiencies

Abstract

The subject of the present invention is to provide a die mounting device for enhancing positioning precision. The solution of the present invention is to provide a die mounting device comprising: a bonding head for carrying the picked die on a substrate; a target indicator which is mounted on the upper portion of the bonding head for emitting light; and a camera device for photographing the position identification label of the substrate and the target indicator; wherein, the camera device photographs the target indicator while the focal point is deviated.

Description

黏晶裝置及半導體裝置的製造方法Sticky crystal device and manufacturing method of semiconductor device

本案是有關黏晶裝置,例如可適用於具備識別基板的攝影機的黏晶機。This case relates to a die attach device, for example, a die attach device that can be applied to a camera having an identification substrate.

在半導體裝置的製造工程的一部分,有將半導體晶片(以下簡稱晶粒)搭載於配線基板或引線架等(以下簡稱基板)而組合封裝的工程,在組合封裝的工程的一部分,有從半導體晶圓(以下簡稱晶圓)分割晶粒的工程(切割工程),及將分割的晶粒搭載於基板上的晶粒接合工程。被使用在晶粒接合工程的半導體製造裝置為黏晶機等的黏晶裝置。A part of the manufacturing process of a semiconductor device includes a process in which a semiconductor wafer (hereinafter referred to as a die) is mounted on a wiring board or a lead frame (hereinafter referred to as a substrate) in a combined package, and a part of the combined packaging process includes a semiconductor crystal A process (cutting process) of dividing a die by a circle (hereinafter referred to as a wafer) and a die bonding process of mounting the divided die on a substrate. A semiconductor manufacturing apparatus used in a die bonding process is a die bonding apparatus such as a die bonding machine.

黏晶機是以焊錫、鍍金、樹脂作為接合材料,將晶粒接合(搭載黏著)於基板或已被接合的晶粒上的裝置。在將晶粒例如接合於基板的表面的黏晶機中,利用被稱為夾頭的吸附噴嘴來從晶圓吸附晶粒而拾取(拾取工程),搬送至基板上,賦予推壓力,且藉由加熱接合材來進行接合(接合工程)的動作(作業)會重複被進行。The die bonder is a device that uses solder, gold plating, and resin as bonding materials to bond (mount and adhere) the crystal grains to the substrate or the bonded crystal grains. In a die-bonding machine for bonding crystal grains to the surface of a substrate, for example, a suction nozzle called a chuck is used to pick up the crystal grains from the wafer and pick them up (pick-up process), transfer them to the substrate, apply a pressing force, and borrow The operation (work) of joining (joining process) by heating the joining material is repeated.

在上述的拾取工程時及接合工程時,配合各個的工程,以攝像裝置來攝取晶粒或基板,根據攝取的畫像來藉由畫像處理進行定位及檢查。

[先前技術文獻]
[專利文獻]
At the time of the picking process and the joining process described above, in cooperation with each process, a crystal device or a substrate is captured by an imaging device, and positioning and inspection are performed by image processing based on the captured image.

[Prior technical literature]
[Patent Literature]

[專利文獻1] 日本特開2016-171107號公報
[專利文獻2] 日本特開2016-197629號公報
[專利文獻3] 日本特開2016-197630號公報
[Patent Document 1] Japanese Patent Laid-Open No. 2016-171107
[Patent Document 2] Japanese Patent Laid-Open No. 2016-197629
[Patent Document 3] Japanese Patent Application Publication No. 2016-197630

(發明所欲解決的課題)(Problems to be solved by the invention)

然而,近來封裝的小型・薄型化、晶粒的薄型化之chip on chip的層疊技術的發達,晶粒的接合須更嚴格一位數等級的μm的定位。為了提高定位精度,正確地掌握參與接合處理的接合頭、攝像系等的安裝單元的位置及以旋轉角所規定的姿勢為重要。
本案的課題是在於提供一種使定位精度更提升的黏晶裝置。
其他的課題及新穎的特徴可由本說明書的記述及附圖明確得知。

(用以解決課題的手段)
However, with the recent development of chip-on-chip lamination technology for package miniaturization, thinning of chips, and thinning of crystal grains, the bonding of the crystal grains must be more strictly positioned at a single-digit μm. In order to improve the positioning accuracy, it is important to accurately grasp the positions of the mounting units such as the bonding head, the camera system, and the like involved in the bonding process, and the posture specified by the rotation angle.
The object of the present case is to provide a die-bonding device that improves positioning accuracy.
Other problems and novel features can be clearly understood from the description of this specification and the drawings.

(Means for solving problems)

本案之中代表性的概要簡單說明如下述般。
亦即,黏晶裝置係具備:
接合頭,其係將拾取的晶粒載置於基板;
目標標示器,其係被設在前述接合頭的上部發光;及
攝像裝置,其係攝取前述基板的位置識別標記及前述目標標示器,
前述攝像裝置,係於焦點偏離的狀態,攝取前述目標標示器。

[發明的效果]
A brief summary of the representative in this case is as follows.
That is, the sticky crystal device has:
A bonding head, which is configured to load the picked die on a substrate;
A target marker that emits light on the upper part of the bonding head; and an imaging device that picks up the position identification mark of the substrate and the target marker,
The imaging device is in a state where the focus is deviated and captures the target indicator.

[Effect of the invention]

若根據上述黏晶裝置,則可更提升定位精度。According to the above-mentioned sticking crystal device, the positioning accuracy can be further improved.

以下,利用圖面來說明有關實施形態、變形例及實施例。但,在以下的說明中,有對同一構成要素附上同一符號省略重複說明的情形。另外,圖面為了使說明更為明確,相較於實際的形態,有模式性地表示各部的寬度、厚度、形狀等的情況,但究竟為一例,並非限定本發明的解釋者。Hereinafter, the embodiments, modifications, and examples will be described using drawings. However, in the following description, the same components are denoted by the same reference numerals, and redundant descriptions may be omitted. In addition, in order to make the description clearer, the width, thickness, and shape of each part may be schematically shown in comparison with the actual form. However, this is an example and does not limit the interpreter of the present invention.

首先,利用圖1~4來說明有關定位的課題。圖1是說明接合頭及攝影機的座標系的圖。圖2是說明結合接合頭及攝影機的座標系的方法的圖。圖3是說明在接合頭的X軸或Y軸的動作產生的擺動(pitching)給予Z軸的影響的圖。圖4是說明接合頭的變位的圖。First, the problems related to positioning will be described using FIGS. 1 to 4. FIG. 1 is a diagram illustrating the coordinate system of a joint head and a camera. FIG. 2 is a diagram illustrating a method of coupling a coordinate system of a joint head and a camera. FIG. 3 is a diagram illustrating the effect of pitching on the X-axis or Y-axis of the bonding head to the Z-axis. FIG. 4 is a diagram illustrating displacement of the bonding head.

如圖1所示般,攝取基板等的工件的攝影機CA是被搭載於XY平台DU1,接合頭HD是被搭載於其他的XY平台DU2。所欲藉由正確地掌握接合裝置的接合頭的位置來使接合精度安定化。但,難以機械性地使搭載於不同的XY平台的接合頭HD與攝影機CA(光學系)的座標系完全一致。As shown in FIG. 1, the camera CA that picks up a workpiece such as a substrate is mounted on the XY stage DU1, and the bonding head HD is mounted on another XY stage DU2. It is desirable to stabilize the joining accuracy by accurately grasping the position of the joining head of the joining device. However, it is difficult to mechanically make the joint heads HD mounted on different XY stages completely coincide with the coordinate system of the camera CA (optical system).

為了正確地掌握接合頭HD的位置,有以接合頭HD來設置複數的打痕於感壓紙PSP,作成接合頭與光學系的2個的平面座標系的變換行列的方法。此方法是若未以相當的多數設置打痕,則無法除去接合頭HD的XY平台DU2的擺動(pitching)、橫搖(yawing)的影響。因此,實質在此方法,擺動、橫搖的修正是不可能。並且,當架台等熱變形而接合頭HD的XY平台DU2與攝影機CA的XY平台DU1的位置關係變動時,無法除去其影響。而且,無法即時監視接合頭HD的位置。In order to accurately grasp the position of the bonding head HD, there is a method of setting a plurality of marks on the pressure-sensitive paper PSP with the bonding head HD, and forming a conversion matrix of the two plane coordinate systems of the bonding head and the optical system. In this method, if there are not a considerable number of marks, the effects of pitching and yawing of the XY stage DU2 of the bonding head HD cannot be removed. Therefore, in this method, the correction of swing and roll is impossible. In addition, when the positional relationship between the XY stage DU2 of the joint head HD and the XY stage DU1 of the camera CA changes due to thermal deformation of the gantry or the like, the influence cannot be removed. Moreover, the position of the bonding head HD cannot be monitored in real time.

如圖3所示般,在接合頭HD的X軸或Y軸的動作產生的擺動會影響Z軸。亦即,因在搭載接合頭HD的XY平台DU2產生的擺動、橫搖等,也會產生接合頭HD的仰角的變位、仰角方向的變位、本身的θ方向的變位。因仰角變化,影響接合頭HD的著落位置(著落位置變動)。因此,為了實現正確的接合,搭載於XY平台的接合頭HD的Z軸的傾斜(仰角)也須掌握,如圖4所示般,需要檢測出接合頭HD的XY的變位(XY的位移座標)及進一步Z的變位(頭的高度)、仰角(頭的仰角(α))及仰角方向(頭的仰角的方向(β))、頭本身的方向的變位(頭的旋轉(θ))。As shown in FIG. 3, the swing caused by the X-axis or Y-axis movement of the bonding head HD affects the Z-axis. That is, the swing of the XY stage DU2 equipped with the joint head HD, the roll, and the like also cause a displacement in the elevation angle of the joint head HD, a displacement in the elevation direction, and a displacement in the θ direction. The change in elevation angle affects the landing position (landing position variation) of the joint head HD. Therefore, in order to achieve accurate joining, the inclination (elevation angle) of the Z axis of the joining head HD mounted on the XY stage must also be grasped. As shown in FIG. 4, it is necessary to detect the XY displacement (XY displacement) of the joining head HD Coordinates) and further Z displacement (head height), elevation angle (head elevation angle (α)) and elevation direction (head elevation angle direction (β)), head displacement (head rotation (θ )).

<實施形態>
其次,利用圖5~8來說明有關解決上述的課題之一例的實施形態。圖5是表示實施形態的攝影機與接合頭和基板的關係的圖。圖6是說明發光目標標示器與對位標記的關係的圖。圖7是表示圖6的發光目標標示器的攝像畫像的圖。圖8是表示發光目標標示器的構成例的圖。
<Embodiment>
Next, an embodiment related to an example of solving the above problems will be described with reference to FIGS. 5 to 8. FIG. 5 is a diagram showing a relationship between a camera, a bonding head, and a substrate according to the embodiment. FIG. 6 is a diagram illustrating a relationship between a light emitting target indicator and an alignment mark. FIG. 7 is a diagram showing a photographed image of the light-emitting target marker of FIG. 6. FIG. 8 is a diagram showing a configuration example of a light emitting target indicator.

如圖5所示般,以攝像裝置的攝影機CA來一併監視基板S上的目標位置(位置識別標記)TP與接合頭的座標。藉此,可在攝影機CA的畫像內的座標系集中式管理,可算出正確的位移量。並且,可即時監視接合頭HD的位置,熱變形等也可對應。As shown in FIG. 5, the camera CA of the imaging device monitors the coordinates of the target position (position identification mark) TP on the substrate S and the joint head together. Thereby, the coordinate system in the image of the camera CA can be centrally managed, and an accurate displacement amount can be calculated. In addition, the position of the bonding head HD can be monitored in real time, and thermal deformation and the like can be handled.

為了監視接合頭HD的座標,如圖6所示般,在接合頭HD安裝以LED光源所構成的發光目標標示器LTM,以攝影機CA來檢測出其位置。此時,由於對焦於基板S上的目標,因此發光目標標示器LTM是位於比攝影機CA的焦點距離(Lf)更短的距離(Lh),攝像畫像是藉由偏焦,如圖7所示般,光源(發光目標標示器LTM)會呈現圓形成圓形像CI。圓形像CI是線性地追隨接合頭HD的移動。因此,即使為此偏焦的圓形像CI,也可求取攝影機CA與接合頭HD的相對位置。並且,圓形像CI是比對焦時的光源像還呈現大。在呈現大的圓的定位精度是在畫像運算上的定位精度比呈現小的圓佳。通常,圓的情況是畫像境界面的圓周長度長,定位精度較佳。In order to monitor the coordinates of the bonding head HD, as shown in FIG. 6, a light emitting target indicator LTM constituted by an LED light source is mounted on the bonding head HD, and its position is detected by the camera CA. At this time, because the target on the substrate S is focused, the light-emitting target indicator LTM is located at a distance (Lh) shorter than the focal distance (Lf) of the camera CA, and the photographed image is defocused, as shown in FIG. 7 Generally, the light source (light emitting target indicator LTM) will appear round to form a circular image CI. The circular image CI follows the movement of the bonding head HD linearly. Therefore, even for this defocused circular image CI, the relative position of the camera CA and the joint head HD can be obtained. In addition, the circular image CI is larger than the light source image at the time of focusing. The positioning accuracy of a large circle is better than that of a small circle. Generally, in the case of a circle, the circumferential length of the image interface is long, and the positioning accuracy is better.

另外,若將LED直接搭載於接合頭HD,則因LED的發光時的自發熱的影響,發光目標標示器LTM的位置會移動,因此如圖8所示般,將亦為熱源的光源LS離開接合頭HD,藉由光纖OF來導光至接合頭HD的上部的發光目標標示器LTM的位置為理想。藉由利用光纖來分離發光光源的目標標示器部與熱源,可使發光目標標示器LTM的位置安定。In addition, if the LED is directly mounted on the bonding head HD, the position of the light emitting target indicator LTM will be moved due to the effect of self-heating during the light emission of the LED, so as shown in FIG. 8, the light source LS, which is also a heat source, will be separated. The bonding head HD preferably guides light to the position of the light emitting target indicator LTM on the upper portion of the bonding head HD through the optical fiber OF. By using an optical fiber to separate the target indicator portion of the light emitting light source from the heat source, the position of the light emitting target indicator LTM can be stabilized.

在此,與其他的例子作比較。圖9是說明實施形態的發光目標標示器與其他的目標標示器的比較的圖,圖9(A)是表示攝影機對焦於基板上的目標的情況的圖,圖9(B)是表示在接合頭搭載第一比較例的目標標示器的情況的圖,圖9(C)是表示在接合頭搭載第二比較例的目標標示器的情況的圖,圖9(D)是表示圖9(C)的接合頭傾斜的情況的圖,圖9(E)是表示在接合頭搭載實施形態的發光目標標示器的情況的圖。Here, compare with other examples. FIG. 9 is a diagram illustrating a comparison between a light-emitting target marker and other target markers according to the embodiment. FIG. 9 (A) is a view showing a state where a camera focuses on a target on a substrate, and FIG. 9 (B) is a view showing a state where FIG. 9 (C) is a view showing a case where the target marker of the first comparative example is mounted on the head, and FIG. 9 (D) is a view showing FIG. 9 (C) FIG. 9 (E) is a view showing a case where the bonding head is tilted, and FIG. 9 (E) is a view showing a case where the light emitting target indicator of the embodiment is mounted on the bonding head.

由下述的理由,使用發光光源作為搭載於接合頭HD的目標標示器的實施形態的手法可謂優越。For the following reasons, the method of using the light emitting light source as the target indicator mounted on the bonding head HD is superior.

在圖9(A)所示的攝影機CA的位置,對焦於基板S上的目標。At the position of the camera CA shown in FIG. 9 (A), the target on the substrate S is focused.

如圖9(B)所示般,若將玻璃蒸鍍型不發光的通常的目標標示器TM搭載於接合頭HD的上部,則與目標標示器TM是不對焦以偏焦攝像,周圍與畫像會重疊而難以識別目標標示器TM。並且,需要另外設置照明,造成周圍也照亮。因此,須以目標標示器TM能顯露的方式周邊設計。如圖9(E)所示般,搭載光點小的LED來予以識別(使用發光目標標示器LTM)的實施形態是可提高與周圍的對比差。As shown in FIG. 9 (B), if a normal target marker TM that does not emit light with a glass evaporation type is mounted on the upper part of the bonding head HD, the target marker TM is out of focus and the image is defocused. Overlapping makes it difficult to identify the target marker TM. In addition, it is necessary to provide additional lighting, so that the surrounding area is also illuminated. Therefore, the peripheral design must be designed in such a way that the target marker TM can be exposed. As shown in FIG. 9 (E), an embodiment in which an LED with a small light spot is mounted for identification (using a light emitting target indicator LTM) can improve the contrast with the surroundings.

如圖9(C)所示般,可思考安裝反射鏡MR或稜鏡等,將目標標記TM搭載於接合頭HD的側部,對焦,但若使用反射鏡MR或稜鏡等,則如圖9(D)所示般,在接合頭HD的仰角變化時不易掌握位置。As shown in FIG. 9 (C), it is possible to think of mounting a mirror MR or 稜鏡, etc., and to mount the target mark TM on the side of the joint head HD, and focus, but if using a mirror MR or 稜鏡, etc., as shown in FIG. As shown in 9 (D), it is difficult to grasp the position when the elevation angle of the joint head HD changes.

其次,利用圖10來說明有關接合頭的位置偏離的修正。圖10是說明接合頭的位置偏離的圖,圖10(A)、(D)是表示未位置偏離的情況的圖,圖10(B)是表示接合頭在Y軸正方向位置偏離的情況的圖,圖10(C)是表示接合頭在Y軸負方向位置偏離的情況的圖。Next, the correction of the positional deviation of the bonding head will be described using FIG. 10. Fig. 10 is a diagram illustrating the positional deviation of the joint head. Figs. 10 (A) and 10 (D) are diagrams showing a state where the positional deviation is not caused. FIG. 10 (C) is a diagram showing a state where the position of the bonding head is shifted in the negative direction of the Y axis.

如圖10(B)、(C)所示般,在接合頭HD的移動量有增減時,藉由以攝影機CA來識別設在接合頭HD的上部的發光目標標示器LTM,可檢測出移動量的增減(位置偏離量)。藉由修正該部分,可正確地控制接合位置。As shown in FIGS. 10 (B) and (C), when the amount of movement of the bonding head HD increases or decreases, the camera CA can be used to identify the light-emitting target indicator LTM provided on the top of the bonding head HD, and it can be detected. Increase or decrease in movement amount (position deviation amount). By correcting this part, the joining position can be accurately controlled.

若根據實施形態,則可取得以下所示的一個或複數的效果。
(1)藉由在一個的攝影機測定工件的基板與接合頭的位置,可在一個的攝影機畫像的座標系檢測出相對位置。可不進行攝影機間或單元間的座標對準之不需要的修正處理。
(2)可每次測定接合頭的座標。因此,可減少對於動工前產生的修正資料的依賴。
(3)藉由使用發光目標標示器,可在安定地取得在未對焦的狀態的攝像畫像。
(4)藉由正確地掌握接合頭的空間的位置,可提升接合的精度。
According to the embodiment, one or a plurality of effects shown below can be obtained.
(1) By measuring the positions of the substrate and the bonding head of the workpiece with one camera, the relative position can be detected in the coordinate system of the image of one camera. Unnecessary correction processing for coordinate alignment between cameras or units can be omitted.
(2) The coordinates of the joint head can be measured each time. Therefore, reliance on correction data generated before construction can be reduced.
(3) By using a light-emitting target marker, it is possible to stably acquire a captured image in an unfocused state.
(4) The accuracy of the joining can be improved by accurately grasping the position of the space of the joining head.

<變形例>
以下,舉幾個實施形態的代表性的變形例。在以下的變形例的說明中,對於具有與在上述的實施形態說明者同樣的構成及機能的部分可使用與上述的實施形態同樣的符號。而且,有關如此的部分的說明是可在技術上不矛盾的範圍內適當援用上述的實施形態的說明。並且,上述的實施形態的一部分及複數的變形例的全部或一部分可在技術上不矛盾的範圍內適當複合地適用。
< Modifications >
In the following, some representative modifications of the embodiments are given. In the following description of the modification example, the same reference numerals as those of the above-mentioned embodiment may be used for portions having the same configuration and function as those described in the above-mentioned embodiment. In addition, the description about such a part is a description which can appropriately refer to the said embodiment within the range which is not technically contradictory. In addition, a part of the above-described embodiment and all or a part of the plural modifications can be appropriately combined in a technically non-contradictory range.

實施形態是搭載於接合頭的發光目標標記為一個,但藉由搭載複數個發光目標標記,接合頭的旋轉或高度、仰角關聯的測定成為可能。In the embodiment, there is one light emitting target mark mounted on the bonding head. However, by mounting a plurality of light emitting target marks, it is possible to measure the rotation, height, and elevation angle of the bonding head.

(第一變形例)
第一變形例是測定接合頭的旋轉及高度的例子,利用圖11來說明。
(First Modification)
The first modification is an example of measuring the rotation and height of the bonding head, and it will be described using FIG. 11.

圖11是說明第一變形例的發光目標標示器的圖,圖11(A)是實施形態的發光目標標示器的正面圖,圖11(B)是第一變形例的發光目標標示器的正面圖,圖11(C)是接合頭旋轉時的發光目標標示器的正面圖,圖11(D)是接合頭變高時的發光目標標記的正面圖,圖11(E)是第一變形例的發光目標標示器的側面圖,圖11(F)是圖11(A)的攝像畫像,圖11(G)是圖11(B)的攝像畫像,圖11(H)是圖11(C)的攝像畫像,圖11(I)是圖11(D)的攝像畫像。FIG. 11 is a diagram illustrating a light-emitting target marker according to a first modification. FIG. 11 (A) is a front view of the light-emitting target marker according to the embodiment, and FIG. 11 (B) is a front view of the light-emitting target marker according to the first modification. FIG. 11 (C) is a front view of the light emitting target indicator when the bonding head is rotated, FIG. 11 (D) is a front view of the light emitting target mark when the bonding head is raised, and FIG. 11 (E) is a first modification FIG. 11 (F) is a photographed image of FIG. 11 (A), FIG. 11 (G) is a photographed image of FIG. 11 (B), and FIG. 11 (H) is FIG. 11 (C) Fig. 11 (I) is a photographic portrait of Fig. 11 (D).

如圖11(A)及圖11(B)所示般,第一變形例是將比實施形態的發光目標標示器LTM更小的發光目標標示器搭載於五個接合頭HD。將一個的發光目標標示器LTM1配置於中央,在其周邊將四個的發光目標標示器LTM2,LTM3,LTM4,LTM5等距離配置於四方,以三個的發光目標標示器LTM1,LTM2,LTM3會在第一方向位於一直線上的方式配置。以三個的發光目標標示器LTM1,LTM4,LTM5會在第二方向位於一直線上的方式配置。第一方向是與第二方向正交的方向。如圖11(A)(B)所示般,接合頭HD的高度為相同的情況,如圖11(E)(F)所示般,發光目標標示器是圓形像,第一變形例的發光目標標示器LTM1~LTM5的圓形像是比實施形態的發光目標標示器LTM的圓形像更小。As shown in FIG. 11 (A) and FIG. 11 (B), a first modification example is to mount a light emitting target marker smaller than the light emitting target marker LTM of the embodiment on five joint heads HD. One light-emitting target indicator LTM1 is arranged at the center, four light-emitting target indicators LTM2, LTM3, LTM4, and LTM5 are equidistantly arranged on the perimeter, and three light-emitting target indicators LTM1, LTM2, and LTM3 are arranged at the same distance. It is arranged in a straight line in the first direction. The three light-emitting target markers LTM1, LTM4, and LTM5 are arranged in a straight line in the second direction. The first direction is a direction orthogonal to the second direction. As shown in FIG. 11 (A) (B), the height of the bonding head HD is the same. As shown in FIG. 11 (E) (F), the light emitting target indicator is a circular image. The circular images of the light-emitting target markers LTM1 to LTM5 are smaller than the circular images of the light-emitting target marker LTM of the embodiment.

若接合頭HD旋轉,則如圖11(H)所示般,位於一直線上的複數的發光目標標示器的像的位置也旋轉,因此可測定θ。又,若接合頭HD的高度改變,則如圖11(I)所示般,發光目標標示器的像的大小及發光目標標示器的像間的距離也改變。藉由測定發光目標標示器的像間的距離的變化,可測定接合頭HD的Z(高度)的變位。When the bonding head HD is rotated, as shown in FIG. 11 (H), the positions of the images of the plurality of light-emitting target markers located on a line are also rotated, so that θ can be measured. When the height of the bonding head HD is changed, as shown in FIG. 11 (I), the size of the image of the light emitting target indicator and the distance between the images of the light emitting target indicator also change. By measuring the change in the distance between the images of the luminous target indicator, the Z (height) displacement of the bonding head HD can be measured.

又,藉由測定發光目標標示器的像的大小,也可測定接合頭HD的Z(高度)的變位。In addition, by measuring the size of the image of the light emitting target indicator, the Z (height) displacement of the bonding head HD can also be measured.

藉由將發光目標標示器複數化,可檢測出接合頭的高度及θ旋轉的變位。By multiplexing the light emitting target indicator, it is possible to detect the displacement of the height of the joint head and theta rotation.

(第二變形例)
第二變形例是檢測出接合頭的傾斜成分的例子,利用圖12~14來說明。
(Second Modification)
The second modification is an example in which the inclination component of the bonding head is detected, and is described with reference to FIGS. 12 to 14.

圖12是說明第二變形例的發光目標標示器的圖。圖13是說明接合頭的傾斜的測定的圖,圖13(A)是在接合頭無傾斜的情況的發光目標標示器的畫像,圖13(B)是在接合頭無傾斜,但在XY方向變位的情況的發光目標標示器的畫像,圖13(C)是在接合頭有傾斜的情況的發光目標標示器的畫像。圖14是說明接合頭的傾斜的測定的圖,圖14(A)及(D)是表示在接合頭無傾斜的狀態的圖,圖14(B)(C)是表示在接合頭有傾斜的狀態的圖。FIG. 12 is a diagram illustrating a light emitting target indicator according to a second modification. FIG. 13 is a diagram illustrating the measurement of the inclination of the bonding head. FIG. 13 (A) is an image of the light emitting target indicator when the bonding head is not inclined. FIG. FIG. 13 (C) is a portrait of the light-emitting target indicator when the joint is tilted, and FIG. 13 (C) is a portrait of the light-emitting target indicator when the bonding head is inclined. FIG. 14 is a diagram illustrating the measurement of the inclination of the bonding head. FIGS. 14 (A) and (D) are diagrams showing a state where the bonding head is not inclined, and FIG. 14 (B) (C) is a diagram showing the inclination of the bonding head. State diagram.

如圖12所示般,複數的發光目標標示器LTM是分別設置高度不同(ΔH>0)。換言之,在接合頭HD的上部的高度不同的位置搭載發光目標標示器LTM。此時,即使發光目標標示器LTM的大小相同,焦點距離也會不同,因此如圖13(A)所示般,其偏焦的圓形像是大小不同。藉由測定此圓形像的中心間距離,可區別接合頭HD為傾斜或者是接合頭HD的移動距離不同。如圖13(B)所示般,若被照體間距離不同的2個的發光目標標示器LTM的像等距離(Lb=La)移動,則接合頭HD是XY方向移動,如圖13(C)所示般,若2個的發光目標標示器LTM的像的距離改變(Lc≠La)則可判斷成接合頭HD是傾斜。As shown in FIG. 12, the plurality of light emitting target indicators LTM are set at different heights (ΔH> 0). In other words, the light emitting target indicator LTM is mounted at a position where the height of the upper part of the bonding head HD is different. At this time, even if the size of the light emitting target indicator LTM is the same, the focal distance will be different. As shown in FIG. 13 (A), the defocused circular images have different sizes. By measuring the distance between the centers of the circular images, it can be distinguished whether the bonding head HD is inclined or the moving distance of the bonding head HD is different. As shown in FIG. 13 (B), if the images of two light-emitting target markers LTM with different distances between the subjects move at equal distances (Lb = La), the bonding head HD moves in the XY direction, as shown in FIG. 13 ( C) As shown in the figure, if the distance between the images of the two light-emitting target markers LTM is changed (Lc ≠ La), it can be determined that the bonding head HD is inclined.

因此,如圖14(B)(C)所示般,當接合頭HD傾斜時,藉由改變複數化的發光目標標示器的設置高度,可檢測出接合頭的仰角變位及仰角方向。Therefore, as shown in FIGS. 14 (B) and (C), when the bonding head HD is tilted, by changing the setting height of the plural luminous target indicator, it is possible to detect the elevation angle displacement and the elevation direction of the bonding head.

(第三變形例)
第三變形例是測定接合頭的旋轉、高度及傾斜的例子,利用圖15來說明。圖15是說明第三變形例的發光目標標示器的圖。
(Third Modification)
The third modification is an example of measuring the rotation, height, and inclination of the bonding head, and is described with reference to FIG. 15. FIG. 15 is a diagram illustrating a light emitting target indicator according to a third modification.

如圖15所示般,第三變形例是組合第一變形例與第二變形例的例子,在第三變形例中,以和第一變形例同樣的配置將五個的發光目標標示器搭載於接合頭HD的上部。將一個的發光目標標示器LTM1配置於中央,在其周邊將四個的發光目標標示器LTM2,LTM3,LTM4,LTM5等距離配置於四方,以三個的發光目標標示器LTM1,LTM2,LTM3會在第一方向位於一直線上的方式配置。以三個的發光目標標示器LTM1,LTM4,LTM5會在第二方向位於一直線上的方式配置。第一方向是與第二方向正交的方向。並且,改變一直線配置於第一方向的三個的發光目標標記的高度,改變一直線配置於第二方向的三個的發光目標標記的高度。藉此,可測定接合頭的旋轉、高度及傾斜。As shown in FIG. 15, the third modification is an example in which the first modification and the second modification are combined. In the third modification, five light-emitting target markers are mounted in the same configuration as the first modification. On the upper part of the joint head HD. One light-emitting target indicator LTM1 is arranged at the center, four light-emitting target indicators LTM2, LTM3, LTM4, and LTM5 are equidistantly arranged on the perimeter, and three light-emitting target indicators LTM1, LTM2, and LTM3 are arranged at the same distance. It is arranged in a straight line in the first direction. The three light-emitting target markers LTM1, LTM4, and LTM5 are arranged in a straight line in the second direction. The first direction is a direction orthogonal to the second direction. Then, the heights of the three light-emitting target marks arranged in a line in the first direction are changed, and the heights of the three light-emitting target marks arranged in a line in the second direction are changed. Thereby, the rotation, height, and inclination of the bonding head can be measured.

若增加發光目標標示器的數量或距離的種類來利用統計計算處理,則可進行更正確的測定。If the number of light emitting target markers or the type of the distance are increased to use statistical calculation processing, more accurate measurement can be performed.

(第四變形例)
圖16是表示第四變形例的發光目標標示器的構成例的圖。圖17是說明近接圓形像的重疊的圖。
(Fourth Modification)
FIG. 16 is a diagram showing a configuration example of a light emitting target indicator according to a fourth modification. FIG. 17 is a diagram explaining the superimposition of a close circular image.

第三變形例的發光目標標示器LTM1~LTM5是以依場所而厚度不同的石英玻璃QG的一體型所製作,例如在發光目標標示器LTM1,LTM2,LTM3的位置形成孔(光導通路)OC1,OC2,OC3,從光源LS1,LS2,LS3經由光纖OF1,OF2,OF3來使導光至孔OC1,OC2,OC3。藉此,可使相對位置安定化。並且,藉由以電源・控制部PC1,PC2,PC3來分別控制各光源LS1,LS2,LS3的發光,可各一方點燈,防止如圖17所示般的近接圓形像的重疊的影響。發光目標標示器LTM4,LTM5也同樣構成。The light-emitting target markers LTM1 to LTM5 of the third modification are made of an integrated type of quartz glass QG with different thickness depending on the location. For example, holes (light guide paths) OC1 are formed at the positions of the light-emitting target markers LTM1, LTM2, and LTM3. OC2, OC3, from the light sources LS1, LS2, LS3 through the optical fibers OF1, OF2, OF3 to guide light to the holes OC1, OC2, OC3. Thereby, the relative position can be stabilized. In addition, by controlling the light emission of each of the light sources LS1, LS2, and LS3 by the power source control units PC1, PC2, and PC3, each of them can be turned on to prevent the influence of the superimposed circular image as shown in FIG. 17. The light emitting target indicators LTM4 and LTM5 are also configured in the same manner.

以下說明有關將上述的實施形態適用於黏晶機的例子。

[實施例]
An example in which the above-described embodiment is applied to a die attach machine will be described below.

[Example]

圖18是表示有關實施例的黏晶機的概略的俯視圖。圖19是說明在圖18中從箭號A方向看時,拾取頭及接合頭的動作的圖。FIG. 18 is a schematic plan view showing a die bonder according to the embodiment. FIG. 19 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. 18.

黏晶機10是大致區分具有:供給部1、拾取部2、中間平台部3、接合部4、搬送部5、基板供給部6、基板搬出部7及監視控制各部的動作的控制部8,該供給部1是供給安裝於印刷了成為一個或複數的最終1封裝的製品區域(以下稱為封裝區域P)的基板S的晶粒D。Y軸方向為黏晶機10的前後方向,X軸方向為左右方向。晶粒供給部1被配置於黏晶機10的前面側,接合部4被配置於內部側。The die attacher 10 is roughly divided into a supply unit 1, a pick-up unit 2, an intermediate stage unit 3, a joint unit 4, a transport unit 5, a substrate supply unit 6, a substrate carry-out unit 7, and a control unit 8 that monitors and controls the operation of each unit. The supply unit 1 is a die D for supplying a substrate S mounted on a product area (hereinafter referred to as a package area P) printed with one or a plurality of final 1 packages printed. The Y-axis direction is the front-back direction of the die attach machine 10, and the X-axis direction is the left-right direction. The die supply section 1 is arranged on the front side of the die attacher 10, and the bonding section 4 is arranged on the inner side.

首先,晶粒供給部1是供給安裝於基板S的封裝區域P的晶粒D。晶粒供給部1是具有:保持晶圓11的晶圓保持台12,及從晶圓11頂起晶粒D的點線所示的頂起單元13。晶粒供給部1是藉由未圖示的驅動手段來移動於XY方向,使拾取的晶粒D移動至頂起單元13的位置。First, the die supply unit 1 is a die D that supplies a package region P mounted on a substrate S. The die supply unit 1 includes a wafer holding table 12 that holds the wafer 11, and a jacking unit 13 indicated by a dotted line that lifts the die D from the wafer 11. The die supply unit 1 is moved in the XY direction by a driving means (not shown), and the picked-up die D is moved to the position of the jack unit 13.

拾取部2是具有:拾取晶粒D的拾取頭21,及使拾取頭21移動於Y方向的拾取頭的Y驅動部23,以及使夾頭22昇降、旋轉及X方向移動的未圖示的各驅動部。拾取頭21是具有將被頂起的晶粒D吸附保持於前端的夾頭22(圖19也參照),從晶粒供給部1拾取晶粒D,載置於中間平台31。拾取頭21是具有使夾頭22昇降、旋轉及X方向移動的未圖示的各驅動部。The pick-up section 2 includes a pick-up head 21 that picks up the die D, a Y-driving section 23 that picks up the pick-up head 21 in the Y direction, and a not-shown diagram that moves the chuck 22 up, down, and moves the X-direction. Each driving section. The pick-up head 21 is a chuck 22 (see also FIG. 19) that sucks and holds the jacked-up crystal grains D at the front end, picks up the crystal grains D from the crystal grain supply unit 1, and places them on the intermediate stage 31. The pick-up head 21 includes drive units (not shown) for raising, lowering, rotating, and moving the chuck 22 in the X direction.

中間平台部3是具有:暫時性地載置晶粒D的中間平台31,及用以識別中間平台31上的晶粒D的平台識別攝影機32。The intermediate stage unit 3 includes an intermediate stage 31 on which the die D is temporarily placed, and a stage identification camera 32 for identifying the die D on the intermediate stage 31.

接合部4是從中間平台31拾取晶粒D,接合於搬送而來的基板S的封裝區域P上,或以層疊於已被接合於基板S的封裝區域P上的晶粒上的形式來接合。接合部4是具有:具備與拾取頭21同樣地將晶粒D吸附保持於前端的夾頭42(圖19也參照)的接合頭41,及使接合頭41移動於Y方向的Y驅動部43,以及攝取基板S的封裝區域P的位置識別標記(未圖示),識別接合位置的基板識別攝影機44。在此,接合頭41是對應於實施形態的接合頭HD,在其上部具備實施形態及第一變形例~第三變形例的任一個的發光目標標示器LTM。
藉由如此的構成,接合頭41是根據平台識別攝影機32的攝像資料來修正拾取位置・姿勢,從中間平台31拾取晶粒D,根據基板識別攝影機44的攝像資料來將晶粒D接合於基板。
The bonding portion 4 picks up the die D from the intermediate stage 31 and is bonded to the package area P of the substrate S that has been transported, or is bonded in a form of being stacked on the die that has been bonded to the package area P of the substrate S. . The bonding section 4 includes a bonding head 41 including a chuck 42 (also referred to in FIG. 19) for holding and holding the crystal grain D on the tip end in the same manner as the pickup head 21, and a Y driving section 43 for moving the bonding head 41 in the Y direction. And a substrate identification camera 44 that picks up a position identification mark (not shown) of the package area P of the substrate S, and identifies the bonding position. Here, the bonding head 41 corresponds to the bonding head HD of the embodiment, and includes a light-emitting target indicator LTM of the embodiment and any one of the first modification to the third modification in the upper portion thereof.
With this configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the platform recognition camera 32, picks up the die D from the intermediate platform 31, and bonds the die D to the substrate based on the imaging data of the substrate recognition camera 44. .

搬送部5是具有:抓住基板S搬送的基板搬送爪51,及基板S移動的搬送軌道52。基板S是藉由以沿著搬送軌道52而設的未圖示的滾珠螺桿來驅動被設在搬送軌道52的基板搬送爪51的未圖示的螺帽而移動。
藉由如此的構成,基板S是從基板供給部6沿著搬送軌道52來移動至接合位置,接合後,移動至基板搬出部7,將基板S交給基板搬出部7。
The transfer unit 5 includes a substrate transfer claw 51 that grips and transfers the substrate S, and a transfer rail 52 that moves the substrate S. The substrate S is moved by driving a nut (not shown) of the substrate transfer claw 51 provided on the transfer rail 52 with a ball screw (not shown) provided along the transfer rail 52.
With such a configuration, the substrate S is moved from the substrate supply section 6 to the bonding position along the transfer rail 52, and after the bonding, the substrate S is moved to the substrate carrying-out section 7 and the substrate S is delivered to the substrate carrying-out section 7.

控制部8是具備:儲存監視控制黏晶機10的各部的動作的程式(軟體)的記憶體,及實行被儲存於記憶體的程式的中央處理裝置(CPU)。The control unit 8 includes a memory that stores a program (software) that monitors and controls the operation of each unit of the die attacher 10, and a central processing unit (CPU) that executes the program stored in the memory.

其次,利用圖20及圖21來說明有關晶粒供給部1的構成。圖20是表示晶粒供給部的外觀立體圖的圖。圖21是表示晶粒供給部的主要部的概略剖面圖。Next, the structure of the crystal grain supply part 1 is demonstrated using FIG. 20 and FIG. 21. FIG. FIG. 20 is a diagram showing an external perspective view of a die supply unit. FIG. 21 is a schematic cross-sectional view showing a main part of a crystal grain supply unit.

晶粒供給部1是具備:移動於水平方向(XY方向)的晶圓保持台12,及移動於上下方向的頂起單元13。晶圓保持台12是具有:保持晶圓環14的擴張環15,及將被保持於晶圓環14且黏著有複數的晶粒D的切割膠帶16定位於水平的支撐環17。頂起單元13是被配置於支撐環17的內側。The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction), and a jacking unit 13 that moves in the vertical direction. The wafer holding table 12 includes an expansion ring 15 that holds the wafer ring 14, and a horizontal support ring 17 that positions the dicing tape 16 that is held on the wafer ring 14 and has a plurality of dies D adhered thereto. The jacking unit 13 is arranged inside the support ring 17.

晶粒供給部1是在晶粒D的頂起時,使保持晶圓環14的擴張環15下降。其結果,被保持於晶圓環14的切割膠帶16會被拉升,晶粒D的間隔會擴大,藉由頂起單元13來從晶粒D下方頂起晶粒D,使晶粒D的拾取性提升。另外,隨著薄型化,將晶粒黏著於基板的黏著劑是由液狀成為薄膜狀,在晶圓11與切割膠帶16之間貼附被稱為晶粒附上薄膜(DAF)18的薄膜狀的黏著材料。就具有晶粒附上薄膜18的晶圓11而言,切割是對於晶圓11與晶粒附上薄膜18進行。因此,在剝離工程中,從切割膠帶16剝離晶圓11與晶粒附上薄膜18。The die supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held by the wafer ring 14 will be pulled up, and the interval between the crystal grains D will be increased. Picking up. In addition, as the thickness is reduced, the adhesive that adheres the crystal grains to the substrate changes from a liquid state to a thin film state. A film called a die attach film (DAF) 18 is attached between the wafer 11 and the dicing tape 16. Like adhesive material. For the wafer 11 having the die-attached film 18, the dicing is performed on the wafer 11 and the die-attached film 18. Therefore, in the peeling process, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16.

黏晶機10是具有:識別晶圓11上的晶粒D的姿勢之晶圓識別攝影機24,及識別被載置於中間平台31的晶粒D的姿勢之平台識別攝影機32,以及識別接合平台BS上的安裝位置之基板識別攝影機44。必須修正識別攝影機間的姿勢偏離的是參與接合頭41的拾取之平台識別攝影機32及參與接合頭41往安裝位置的接合之基板識別攝影機44。The die attacher 10 includes a wafer recognition camera 24 that recognizes the posture of the die D on the wafer 11, a platform recognition camera 32 that recognizes the posture of the die D placed on the intermediate platform 31, and a bonding platform. The substrate identification camera 44 at the mounting position on the BS. It is necessary to correct the posture deviation between the recognition cameras. The platform recognition camera 32 participating in the pickup of the bonding head 41 and the substrate recognition camera 44 participating in the bonding of the bonding head 41 to the mounting position.

利用圖22來說明有關控制部8。圖22是表示控制系的概略構成的方塊圖。控制系80是具備控制部8、驅動部86、訊號部87及光學系88。控制部8是大致區分主要具有以CPU(Central Processor Unit)所構成的控制・運算裝置81、記憶裝置82、輸出入裝置83、匯流線84及電源部85。記憶裝置82是具有:以記憶處理程式等的RAM所構成的主記憶裝置82a,及以記憶控制所必要的控制資料或畫像資料等的HDD或SSD等所構成的輔助記憶裝置82b。輸出入裝置83是具有:顯示裝置狀態或資訊等的監視器83a,輸入操作員的指示的觸控面板83b,及操作監視器的滑鼠83c,以及取入來自光學系88的畫像資料的畫像取入裝置83d。
又,輸出入裝置83具有:
馬達控制裝置83e,其係控制晶粒供給部1的XY平台(未圖示)或接合頭平台的ZY驅動軸等的驅動部86;及
I/O訊號控制裝置83f,其係從各種的感測器訊號或照明裝置等的開關等的訊號部87取入或控制訊號。
在光學系88是含有晶圓識別攝影機24、平台識別攝影機32、基板識別攝影機44。控制・運算裝置81是經由匯流線84來取入必要的資料,進行運算,將資訊傳送至拾取頭21等的控制或監視器83a等。
The control unit 8 will be described using FIG. 22. 22 is a block diagram showing a schematic configuration of a control system. The control system 80 includes a control unit 8, a driving unit 86, a signal unit 87, and an optical system 88. The control unit 8 is roughly divided into a control / computing device 81 mainly composed of a CPU (Central Processor Unit), a memory device 82, an input / output device 83, a bus line 84, and a power supply unit 85. The memory device 82 includes a main memory device 82a constituted by a RAM such as a memory processing program, and an auxiliary memory device 82b constituted by HDD, SSD, or the like, such as control data or image data necessary for memory control. The input / output device 83 is a monitor 83a for displaying device status or information, a touch panel 83b for inputting an operator's instruction, a mouse 83c for operating the monitor, and an image for acquiring image data from the optical system 88. Take-in device 83d.
The input / output device 83 includes:
A motor control device 83e, which is a drive unit 86 that controls an XY stage (not shown) of the die supply unit 1 or a ZY drive shaft of the joint head stage; and
The I / O signal control device 83f takes in or controls signals from a signal unit 87, such as various sensor signals or switches such as lighting devices.
The optical system 88 includes a wafer identification camera 24, a platform identification camera 32, and a substrate identification camera 44. The control / calculation device 81 fetches necessary data via the bus line 84, performs calculations, and transmits the information to the control of the pickup head 21 or the like or the monitor 83a or the like.

控制部8是經由畫像取入裝置83d來將以晶圓識別攝影機24、平台識別攝影機32及基板識別攝影機44所攝取的畫像資料保存於記憶裝置82。藉由根據保存的畫像資料而程式後的軟體,利用控制・運算裝置81來進行晶粒D及基板S的封裝區域P的定位、以及晶粒D及基板S的表面檢查。根據控制・運算裝置81所算出的晶粒D及基板S的封裝區域P的位置來藉由軟體,經由馬達控制裝置83e作動驅動部86。依據此製程來進行晶圓上的晶粒的定位,以拾取部2及接合部4的驅動部來使動作,將晶粒D接合於基板S的封裝區域P上。使用的晶圓識別攝影機24、平台識別攝影機32及基板識別攝影機44為灰階、彩色等,將光強度數值化。The control unit 8 stores the image data captured by the wafer identification camera 24, the platform identification camera 32, and the substrate identification camera 44 in the memory device 82 via the image taking device 83d. By using software programmed based on the stored image data, the control unit 81 is used to perform positioning of the die D and the package region P of the substrate S, and surface inspection of the die D and the substrate S. Based on the positions of the die D and the package area P of the substrate S calculated by the control unit 81, the drive unit 86 is actuated by the software via the motor control device 83e. According to this process, the die is positioned on the wafer, and the driving sections of the pickup section 2 and the bonding section 4 are operated to bond the die D to the package region P of the substrate S. The wafer identification camera 24, the platform identification camera 32, and the substrate identification camera 44 to be used are gray scale, color, and the like, and the light intensity is quantified.

圖23是說明圖18的黏晶機的晶粒接合工程的流程圖。
在實施例的晶粒接合工程中,首先,控制部8是將保持晶圓11的晶圓環14從晶圓盒取出而載置於晶圓保持台12,將晶圓保持台12搬送至進行晶粒D的拾取的基準位置(晶圓裝載(工程P1))。其次,控制部8是從藉由晶圓識別攝影機24所取得的畫像來進行微調整,使晶圓11的配置位置會與其基準位置正確地一致。
FIG. 23 is a flowchart illustrating a die bonding process of the die bonder of FIG. 18.
In the die bonding process of the embodiment, first, the control unit 8 removes the wafer ring 14 holding the wafer 11 from the wafer cassette, places the wafer ring 14 on the wafer holding table 12, and transfers the wafer holding table 12 to the process. A reference position for picking up the die D (wafer loading (process P1)). Next, the control unit 8 performs fine adjustment from the image acquired by the wafer recognition camera 24 so that the arrangement position of the wafer 11 exactly matches the reference position thereof.

其次,控制部8是使載置晶圓11的晶圓保持台12以預定間距來間距移動,保持於水平,藉此將最初被拾取的晶粒D配置於拾取位置(晶粒搬送(工程P2))。晶圓11是預先藉由探針等的檢查裝置來按每個晶粒檢查,按每個晶粒產生表示良、不良的地圖資料,被記憶於控制部8的記憶裝置82。成為拾取對象的晶粒D為良品或不良品的判定是依據地圖資料來進行。控制部8是當晶粒D為不良品時,使搭載晶圓11的晶圓保持台12以預定間距來間距移動,將其次被拾取的晶粒D配置於拾取位置,跳過不良品的晶粒D。Next, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch and maintains it horizontally, thereby arranging the first picked-up die D at the pick-up position (die transfer (process P2) )). The wafer 11 is inspected for each die by an inspection device such as a probe in advance, and map data indicating good or bad is generated for each die, and is stored in the memory device 82 of the control unit 8. The determination of whether the crystal grain D to be picked is a good product or a defective product is performed based on the map data. When the die D is defective, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is mounted at a predetermined pitch, arranges the next picked die D at the pickup position, and skips the defective die. Grain D.

控制部8是藉由晶圓識別攝影機24來攝取拾取對象的晶粒D的主面(上面),從取得的畫像算出拾取對象的晶粒D離上述拾取位置的位置偏離量。控制部8是根據此位置偏離量來使載置晶圓11的晶圓保持台12移動,將拾取對象的晶粒D正確地配置於拾取位置(晶粒定位(工程P3))。The control unit 8 picks up the principal surface (upper surface) of the pick-up die D by the wafer recognition camera 24, and calculates the position deviation amount of the pick-up die D from the pick-up position from the acquired image. The control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed in accordance with the position deviation amount, and correctly arranges the pick-up die D at the pick-up position (die positioning (process P3)).

其次,控制部8是從藉由晶圓識別攝影機24所取得的畫像來進行晶粒D的表面檢查(工程P4)。在此,控制部8是以表面檢查判定是否有問題,判定成在晶粒D的表面無問題時前進至次工程(後述的工程P9),但判定成有問題時,以目視確認表面畫像,或進一步進行高感度的檢查或改變了照明條件等的檢查,有問題時是跳過處理,無問題時是進行次工程的處理。跳過處理是跳過晶粒D的工程P9以後,使載置晶圓11的晶圓保持台12以預定間距來間距移動,將其次被拾取的晶粒D配置於拾取位置。Next, the control unit 8 performs a surface inspection of the die D from the image acquired by the wafer recognition camera 24 (process P4). Here, the control unit 8 determines whether there is a problem by surface inspection, and determines that there is no problem with the surface of the crystal grain D, and proceeds to the next process (process P9 described later). Or carry out further high-sensitivity inspections or inspections where lighting conditions are changed. If there is a problem, skip the process. If there is no problem, perform a sub-process. The skip process is performed after the process P9 of skipping the die D, and the wafer holding table 12 on which the wafer 11 is placed is moved at a predetermined pitch, and the next picked-up die D is arranged at the picking position.

控制部8是以基板供給部6來將基板S載置於搬送軌道52(基板裝載(工程P5))。控制部8是使抓住基板S搬送的基板搬送爪51移動至接合位置(基板搬送(工程P6))。The control unit 8 uses the substrate supply unit 6 to place the substrate S on the transfer rail 52 (substrate loading (process P5)). The control unit 8 moves the substrate transfer claw 51 that grips the substrate S to the bonding position (substrate transfer (process P6)).

以基板識別攝影機44來攝取基板S的封裝區域P的位置識別標記(未圖示),識別接合位置來進行定位(基板定位(工程P7))。The substrate identification camera 44 captures a position identification mark (not shown) of the package area P of the substrate S, and recognizes the bonding position for positioning (substrate positioning (process P7)).

其次,控制部8是從藉由基板識別攝影機44所取得的畫像來進行基板S的封裝區域P的表面檢查(工程P8)。在此,控制部8是以表面檢查判定是否有問題,判定成在基板S的封裝區域P的表面無問題時前進至次工程(後述的工程P9),但判定成有問題時,以目視確認表面畫像,或進一步進行高感度的檢查或改變了照明條件等的檢查,有問題時是跳過處理,無問題時是進行次工程的處理。跳過處理是跳過基板S的封裝區域P的該當捲帶式自動接合的工程P10以後,對基板動工資訊進行不良登記。Next, the control unit 8 performs a surface inspection of the package region P of the substrate S from the image acquired by the substrate recognition camera 44 (process P8). Here, the control unit 8 determines whether there is a problem by surface inspection. When it is determined that there is no problem on the surface of the package area P of the substrate S, the process proceeds to the next process (process P9 described later). However, when it is determined that there is a problem, it is confirmed visually. For surface portraits, or further high-sensitivity inspections or inspections where lighting conditions have been changed, skip processing if there is a problem, or sub-process processing if there is no problem. The skip processing is to skip the process of the tape-and-reel automatic joining process P10 of the package area P of the substrate S, and then perform defective registration of the substrate operation information.

控制部8是藉由晶粒供給部1來將拾取對象的晶粒D正確地配置於拾取位置之後,藉由包含夾頭22的拾取頭21來將晶粒D從切割膠帶16拾取(晶粒操縱(工程P9)),載置於中間平台31((工程P10)。控制部8是以平台識別攝影機32來攝取晶粒D而進行載置於中間平台31的晶粒的姿勢偏離(旋轉偏離)的檢測(工程P11)。控制部8是有姿勢偏離時藉由被設在中間平台31的迴旋驅動裝置(未圖示)在與具有安裝位置的安裝面平行的面使中間平台31迴旋而修正姿勢偏離。The control unit 8 picks up the die D to be picked up at the picking position by the die supply unit 1 and picks up the die D from the dicing tape 16 by the picker 21 including the chuck 22 (die) Manipulate (process P9)) and place it on the intermediate platform 31 ((process P10). The control unit 8 picks up the die D with the platform recognition camera 32 and deviates the orientation (rotational deviation) of the die placed on the intermediate platform 31. ) Detection (process P11). When there is a posture deviation, the control unit 8 rotates the intermediate platform 31 on a plane parallel to a mounting surface having a mounting position by a swivel driving device (not shown) provided on the intermediate platform 31. Correct posture deviation.

控制部8是從藉由平台識別攝影機32所取得的畫像來進行晶粒D的表面檢查(工程P12)。在此,控制部8是以表面檢查判定是否有問題,判定成在晶粒D的表面無問題時前進至次工程(後述的工程P13),但判定成有問題時,以目視確認表面畫像,或進一步進行高感度的檢查或改變了照明條件等的檢查,有問題時,將該晶粒載置於未圖示的不良品托盤等而跳過處理,無問題時進行次工程的處理。跳過處理是跳過晶粒D的工程P13以後,使載置晶圓11的晶圓保持台12以預定間距來間距移動,將其次被拾取的晶粒D配置於拾取位置。The control unit 8 performs a surface inspection of the crystal grain D from the image acquired by the platform recognition camera 32 (process P12). Here, the control unit 8 determines whether there is a problem by surface inspection, and determines that the process proceeds to the next process (the process P13 described later) when there is no problem on the surface of the crystal grain D. However, when it is determined that there is a problem, the surface image is visually confirmed. Further, a high-sensitivity inspection or an inspection with changed lighting conditions may be performed. If there is a problem, the die is placed on a defective tray (not shown) and the processing is skipped. If there is no problem, a secondary process is performed. The skip process is performed after the process P13 of skipping the die D, and the wafer holding table 12 on which the wafer 11 is placed is moved at a predetermined pitch, and the next picked-up die D is arranged at the pickup position.

控制部8是藉由包含夾頭42的接合頭41來從中間平台31拾取晶粒D,將晶粒接合於基板S的封裝區域P或已被接合於基板S的封裝區域P的晶粒(黏晶(Die attach)(工程P13))。控制部8是以基板識別攝影機44來攝取被搭載於接合頭41的上部的發光目標標示器,識別接合頭41的位置及姿勢,在位置或姿勢有偏離時進行修正。The control unit 8 picks up the die D from the intermediate stage 31 by the bonding head 41 including the chuck 42 and bonds the die to the package area P of the substrate S or the die (the package area P that has been bonded to the substrate S) ( Die attach (Project P13)). The control unit 8 uses the substrate recognition camera 44 to pick up the light emitting target indicator mounted on the upper part of the bonding head 41, recognizes the position and posture of the bonding head 41, and corrects when the position or posture deviates.

控制部8是接合晶粒D之後,以基板識別攝影機44來攝取晶粒D、基板S,檢查其接合位置是否正確(晶粒與基板的相對位置檢查(工程P14))。此時,與晶粒的對位同樣地求取晶粒的中心與捲帶式自動接合的中心,檢查相對位置是否正確。After joining the die D, the control unit 8 picks up the die D and the substrate S with the substrate recognition camera 44 and checks whether the joining position is correct (the relative position of the die and the substrate is checked (process P14)). At this time, the center of the crystal grains and the center of the tape-and-roll automatic joining are obtained in the same manner as the alignment of the crystal grains, and it is checked whether the relative position is correct.

其次,控制部8是從藉由基板識別攝影機44所取得的畫像進行晶粒D及基板S的表面檢查(工程P15)。在此,控制部8是以表面檢查判定是否有問題,判定成在被接合的晶粒D的表面無問題時,前進至次工程(後述的工程P9),但判定成有問題時,以目視確認表面畫像,或更進行高感度的檢查或改變照明條件等的檢查,有問題時是跳過處理,無問題時是進行次工程的處理。跳過處理是對基板動工資訊進行不良登記。Next, the control unit 8 performs surface inspection of the crystal grain D and the substrate S from the image acquired by the substrate recognition camera 44 (process P15). Here, the control unit 8 determines whether there is a problem by surface inspection. When it is determined that there is no problem on the surface of the bonded crystal grains D, it proceeds to the next process (process P9 described later). Check the surface image, or perform a high-sensitivity inspection or inspection to change the lighting conditions. If there is a problem, skip the process. If there is no problem, perform a sub-process. Skip processing is a bad registration of substrate start information.

以後,按照同樣的程序,晶粒D各1個接合於基板S的封裝區域P。一旦1個的基板的接合完了,則以基板搬送爪51來將基板S移動至基板搬出部7(基板搬送(工程P16)),將基板S交給基板搬出部7(基板卸載(工程P17))。Thereafter, in accordance with the same procedure, each of the die D is bonded to the package region P of the substrate S. Once the joining of one substrate is completed, the substrate S is moved to the substrate carrying-out portion 7 by the substrate carrying claw 51 (substrate carrying (process P16)), and the substrate S is delivered to the substrate carrying-out portion 7 (substrate unloading (process P17)) ).

以後,按照同樣的程序,晶粒D各1個從切割膠帶16剝下(工程P9)。一旦除了不良品以外全部的晶粒D的拾取完了,則將以晶圓11的外形來保持該等晶粒D的切割膠帶16及晶圓環14等卸載至晶圓盒(工程P18)。Thereafter, in accordance with the same procedure, each of the crystal grains D is peeled from the dicing tape 16 (process P9). Once all the dies D except for defective products have been picked up, the dicing tape 16 and the wafer ring 14 holding the dies D in the shape of the wafer 11 are unloaded to the wafer cassette (process P18).

以上,根據實施形態、變形例及實施例來具體地說明本發明者所研發的發明,但本發明是不限於上述實施形態、變形例及實施例,當然可實施各種變更。The inventions developed by the present inventors have been specifically described based on the embodiments, modifications, and examples, but the present invention is not limited to the above-mentioned embodiments, modifications, and examples, and various modifications can be implemented.

例如,實施例是在晶粒位置識別之後進行晶粒外觀檢查識別,但亦可在晶粒外觀檢查識別之後進行晶粒位置識別。
又,實施例是在晶圓的背面貼附有DAF,但亦可無DAF。
又,實施例是分別具備1個拾取頭及接合頭,但亦可分別為2個以上。又,實施例是具備中間平台,但亦可無中間平台。此情況,拾取頭與接合頭是亦可兼用。
又,實施例是將晶粒的表面朝上接合,但亦可拾取晶粒後使晶粒的表背反轉,將晶粒的背面朝上接合。此情況,中間平台是亦可不設。此裝置是稱為覆晶黏著機。
For example, in the embodiment, the grain appearance inspection and recognition are performed after the grain position recognition, but the grain location recognition may be performed after the grain appearance inspection and recognition.
In the embodiment, the DAF is attached to the back of the wafer, but the DAF may be omitted.
In the embodiment, one pickup head and one bonding head are provided, but two or more of them may be provided. In the embodiment, the intermediate platform is provided, but the intermediate platform may not be provided. In this case, the pickup head and the bonding head may be used in combination.
In the embodiment, the surfaces of the crystal grains are bonded upward, but the surface of the crystal grains may be reversed after picking up the crystal grains, and the back surface of the crystal grains may be bonded upward. In this case, the intermediate platform is optional. This device is called a flip chip adhesive.

10‧‧‧黏晶機10‧‧‧ Sticky Crystal Machine

1‧‧‧晶粒供給部 1‧‧‧Crystal Supply Department

13‧‧‧頂起單元 13‧‧‧ jacking unit

2‧‧‧拾取部 2‧‧‧Pick up department

24‧‧‧晶圓識別攝影機 24‧‧‧ Wafer Identification Camera

3‧‧‧中間平台部 3‧‧‧Middle Platform Department

31‧‧‧中間平台 31‧‧‧ intermediate platform

32‧‧‧平台識別攝影機 32‧‧‧Platform identification camera

4‧‧‧接合部 4‧‧‧ Junction

41‧‧‧接合頭 41‧‧‧Joint head

42‧‧‧夾頭 42‧‧‧Chuck

44‧‧‧基板識別攝影機 44‧‧‧ substrate identification camera

5‧‧‧搬送部 5‧‧‧Transportation Department

51‧‧‧基板搬送爪 51‧‧‧ substrate transfer claw

8‧‧‧控制部 8‧‧‧Control Department

S‧‧‧基板 S‧‧‧ substrate

BS‧‧‧接合平台 BS‧‧‧Joint Platform

D‧‧‧晶粒 D‧‧‧ Grain

P‧‧‧封裝區域 P‧‧‧Packing area

CA‧‧‧攝影機 CA‧‧‧Camera

HD‧‧‧接合頭 HD‧‧‧ Joint Head

LTM‧‧‧發光目標標示器 LTM‧‧‧ Illuminated Target Marker

圖1是說明接合頭及攝影機的座標系的圖。FIG. 1 is a diagram illustrating the coordinate system of a joint head and a camera.

圖2是說明結合接合頭及攝影機的座標系的方法的圖。 FIG. 2 is a diagram illustrating a method of coupling a coordinate system of a joint head and a camera.

圖3是說明在接合頭的X軸或Y軸的動作產生的擺動給予Z軸的影響的圖。 FIG. 3 is a diagram illustrating the influence of the swing on the X-axis or Y-axis of the bonding head to the Z-axis.

圖4是說明接合頭的變位的圖。 FIG. 4 is a diagram illustrating displacement of the bonding head.

圖5是表示實施形態的攝影機與接合頭和基板的關係的圖。 FIG. 5 is a diagram showing a relationship between a camera, a bonding head, and a substrate according to the embodiment.

圖6是說明發光目標標示器與對位標記的關係的圖。 FIG. 6 is a diagram illustrating a relationship between a light emitting target indicator and an alignment mark.

圖7是表示圖6的發光目標標示器的攝像畫像的圖。 FIG. 7 is a diagram showing a photographed image of the light-emitting target marker of FIG. 6.

圖8是表示發光目標標示器的構成例的圖。 FIG. 8 is a diagram showing a configuration example of a light emitting target indicator.

圖9是說明實施形態的發光目標標示器與其他的目標標示器的比較的圖。 FIG. 9 is a diagram explaining a comparison between a light-emitting target marker according to the embodiment and another target marker.

圖10是說明接合頭的位置偏離的圖。 FIG. 10 is a diagram illustrating a positional deviation of the bonding head.

圖11是說明第一變形例的發光目標標示器的圖。 FIG. 11 is a diagram illustrating a light emitting target indicator according to a first modification.

圖12是說明第二變形例的發光目標標示器的圖。 FIG. 12 is a diagram illustrating a light emitting target indicator according to a second modification.

圖13是說明接合頭的傾斜的測定的圖。 FIG. 13 is a diagram illustrating the measurement of the inclination of the bonding head.

圖14是說明接合頭的傾斜的測定的圖。 FIG. 14 is a diagram illustrating the measurement of the inclination of the bonding head.

圖15是說明第三變形例的發光目標標示器的圖。 FIG. 15 is a diagram illustrating a light emitting target indicator according to a third modification.

圖16是表示第四變形例的發光目標標示器的構成例的圖。 FIG. 16 is a diagram showing a configuration example of a light emitting target indicator according to a fourth modification.

圖17是說明近接圓形像的重疊的圖。 FIG. 17 is a diagram explaining the superimposition of a close circular image.

圖18是表示實施例的黏晶機的構成例的概略俯視圖。 FIG. 18 is a schematic plan view showing a configuration example of a die bonder of the embodiment.

圖19是說明在圖18中從箭號A方向看時的概略構成的圖。 FIG. 19 is a diagram illustrating a schematic configuration when viewed from an arrow A direction in FIG. 18.

圖20是表示圖18的晶粒供給部的構成的外觀立體圖。 FIG. 20 is an external perspective view showing a configuration of a crystal grain supply unit in FIG. 18.

圖21是表示圖18的晶粒供給部的主要部的概略剖面圖。 FIG. 21 is a schematic cross-sectional view showing a main part of the crystal grain supply unit of FIG. 18.

圖22是表示圖18的黏晶機的控制系的概略構成的方塊圖。 22 is a block diagram showing a schematic configuration of a control system of the die bonder of FIG. 18.

圖23是說明圖18的黏晶機的晶粒接合工程的流程圖。 FIG. 23 is a flowchart illustrating a die bonding process of the die bonder of FIG. 18.

Claims (15)

一種黏晶裝置,其特徵係具備: 接合頭,其係將拾取的晶粒載置於基板; 目標標示器,其係被設在前述接合頭的上部發光;及 攝像裝置,其係攝取前述基板的位置識別標記及前述目標標示器, 前述攝像裝置,係於焦點偏離的狀態,攝取前述目標標示器。A crystal sticking device is characterized by: A bonding head, which is configured to load the picked die on a substrate; A target indicator, which is provided on the upper part of the joint head to emit light; and An imaging device that picks up the position identification mark of the substrate and the target indicator, The imaging device is in a state where the focus is deviated and captures the target indicator. 如申請專利範圍第1項之黏晶裝置,其中,更具備:控制前述接合頭及前述攝像裝置的控制裝置, 前述攝像裝置係於將焦點對準於前述位置識別標記的狀態,攝取前述目標標示器。For example, the sticky crystal device of the first patent application scope further includes a control device for controlling the joint head and the camera device, The imaging device is in a state of focusing on the position identification mark, and captures the target marker. 如申請專利範圍第2項之黏晶裝置,其中,前述控制裝置,係根據前述目標標示器的圓形像來測定前述接合頭的位置。For example, the sticky crystal device according to item 2 of the patent application range, wherein the control device measures the position of the bonding head based on a circular image of the target indicator. 如申請專利範圍第2項之黏晶裝置,其中,前述接合頭係於直線上具備複數個前述目標標示器, 前述控制裝置,係根據前述目標標示器的圓形像,測定前述接合頭的旋轉或高度。For example, the crystal sticking device according to item 2 of the patent application, wherein the aforementioned bonding head is provided with a plurality of the aforementioned target markers on a straight line, The control device measures the rotation or height of the bonding head based on a circular image of the target indicator. 如申請專利範圍第3項之黏晶裝置,其中,前述接合頭係於直線上具備複數個前述目標標示器, 前述控制裝置,係根據前述目標標示器的圓形像,測定前述接合頭的旋轉或高度。For example, the crystal sticking device of the third scope of the patent application, wherein the aforementioned bonding head is provided with a plurality of the aforementioned target markers on a straight line, The control device measures the rotation or height of the bonding head based on a circular image of the target indicator. 如申請專利範圍第2項之黏晶裝置,其中,複數的前述目標標示器的高度不同, 前述控制裝置,係根據前述目標標示器的圓形像,測定前述接合頭的傾斜或傾斜的方向。For example, the device for sticking a crystal of item 2 of the patent scope, wherein the heights of the plurality of the aforementioned target markers are different, The control device measures a tilt or a tilt direction of the bonding head based on a circular image of the target indicator. 如申請專利範圍第3項之黏晶裝置,其中,複數的前述目標標示器的高度不同, 前述控制裝置,係根據前述目標標示器的圓形像,測定前述接合頭的傾斜或傾斜的方向。For example, for the sticky crystal device of the third scope of the application for patent, wherein the heights of the plurality of the aforementioned target indicators are different, The control device measures a tilt or a tilt direction of the bonding head based on a circular image of the target indicator. 如申請專利範圍第4項之黏晶裝置,其中,複數的前述目標標示器的高度不同, 前述控制裝置,係根據前述目標標示器的圓形像,測定前述接合頭的傾斜或傾斜的方向。For example, the device for sticking a crystal of item 4 of the patent application, wherein the heights of the plurality of the aforementioned target markers are different, The control device measures a tilt or a tilt direction of the bonding head based on a circular image of the target indicator. 如申請專利範圍第1至8項中的任一項所記載之黏晶裝置,其中,前述目標標示器的光源係離開前述接合頭而位置,前述目標標示器與前述光源係以光纖來連接。According to the crystal sticking device described in any one of claims 1 to 8, the light source of the target marker is located away from the bonding head, and the target marker and the light source are connected by optical fibers. 如申請專利範圍第1至8項中的任一項所記載之黏晶裝置,其中,更具備: 拾取前述晶粒的拾取頭;及 載置被拾取的前述晶粒的中間平台, 前述接合頭係拾取被載置於前述中間平台上的前述晶粒。As described in any one of claims 1 to 8 of the scope of patent application, the crystal sticking device further includes: A pick-up head for picking up the aforementioned die; and An intermediate stage on which the aforementioned die is placed, The bonding head picks up the crystal grains placed on the intermediate platform. 一種半導體裝置的製造方法,其特徵係具備: (a)準備具備接合頭及攝像裝置的黏晶裝置之工程,該接合頭係在其上部搭載發光的目標標示器,該攝像裝置係攝取基板的位置識別標記及前述目標標示器; (b)將保持貼附有晶粒的切割膠帶的晶圓環夾具搬入之工程; (c)搬入基板之工程; (d)拾取前述晶粒之工程;及 (e)將拾取的前述晶粒接合於前述基板或已被接合於前述基板的晶粒上之工程, 在前述(e)工程中,前述攝像裝置,係於焦點偏離的狀態,攝取前述目標標示器。A method for manufacturing a semiconductor device, comprising: (a) The project of preparing a sticky crystal device with a bonding head and an imaging device equipped with a light-emitting target marker on the upper part thereof, and the camera device taking the position identification mark of the substrate and the aforementioned target marker; (b) the process of moving the wafer ring fixture holding the dicing tape with the die attached; (c) the project of moving into the substrate; (d) the work of picking up the aforementioned grains; and (e) a process of bonding the picked up crystal grains to the substrate or crystal grains that have been bonded to the substrate, In the step (e), the imaging device is in a state where the focus is out of focus and captures the target indicator. 如申請專利範圍第11項之半導體裝置的製造方法,其中,在前述(e)工程中,前述攝像裝置係於將焦點對準於前述位置識別標記的狀態,攝取前述目標標示器。For example, in the method for manufacturing a semiconductor device according to item 11 of the scope of patent application, in the step (e), the imaging device is in a state of focusing on the position identification mark, and captures the target marker. 如申請專利範圍第12項之半導體裝置的製造方法,其中,前述(e)工程,係根據前述目標標示器的圓形像,測定前述接合頭的位置。For example, in the method for manufacturing a semiconductor device according to claim 12, wherein the (e) process is to measure the position of the bonding head based on a circular image of the target indicator. 如申請專利範圍第13項之半導體裝置的製造方法,其中,前述接合頭係於直線上具備複數個前述目標標示器, 前述(e)工程,係根據前述目標標示器的圓形像,測定前述接合頭的旋轉或高度。For example, the method for manufacturing a semiconductor device according to item 13 of the application, wherein the bonding head is provided with a plurality of the foregoing target markers on a straight line, In the step (e), the rotation or height of the joint head is measured based on a circular image of the target indicator. 如申請專利範圍第14項之半導體裝置的製造方法,其中,複數的前述目標標示器的高度不同, 前述(e)工程,係根據前述目標標示器的圓形像,測定前述接合頭的傾斜。For example, in the method for manufacturing a semiconductor device according to item 14 of the application, wherein the heights of the plurality of target indicators are different, In the step (e), the inclination of the bonding head is measured based on a circular image of the target indicator.
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