TW201935525A - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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TW201935525A
TW201935525A TW107147134A TW107147134A TW201935525A TW 201935525 A TW201935525 A TW 201935525A TW 107147134 A TW107147134 A TW 107147134A TW 107147134 A TW107147134 A TW 107147134A TW 201935525 A TW201935525 A TW 201935525A
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Taiwan
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contact
substrate
extension
semiconductor device
epitaxial
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TW107147134A
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English (en)
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TWI786246B (zh
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秋妮 高希
國洋 徐
清 王
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美商普林斯頓光電公司
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Abstract

本發明揭示諸如垂直腔面發射雷射之半導體裝置及其製造方法。該等半導體裝置包含接觸延伸部及導電黏合材料，諸如可熔金屬合金或導電複合物。在一些例項中，該等半導體裝置進一步包含結構化接觸件。此等組件實現具有最小變形之半導體裝置的製造。例如，可製造展現一點彎曲至不展現彎曲之垂直腔面發射雷射陣列。在一些例項中，具有最小變形之半導體裝置展現增強之效能。

Description

半導體裝置及其製造方法
半導體裝置可包含具有本質應力之組件。例如，磊晶生長層可展現與其上生長該等層之基板失配之一晶格參數。該失配導致(例如)在兩個組件之間的介面附近內發生之應變。此外，在一些例項中，半導體裝置內之各種組件之熱膨脹係數可彼此顯著不同，從而導致半導體裝置之製造或操作期間之熱應力。此等效應可引發半導體裝置中之一可量測變形(例如，彎曲)。該變形在半導體裝置之陣列或晶圓中可係顯著的。對於需要實質上平坦(無變形)之半導體裝置陣列之應用，變形可能係特別成問題的。
此項技術中已知應變補償層。然而，在一些例項中應變補償層(諸如介電應變補償層)可能難以實施。因此，需要替代解決方案。
本發明描述展現一點變形至未展現變形之半導體裝置(諸如離散半導體裝置或半導體裝置陣列)及其製造方法。在一項態樣中，例如，一種半導體裝置包含：一基板，其具有第一及第二相對側；及一磊晶層，其具有第一及第二相對側。該磊晶層之該第一側鄰接該基板之該第一側。
該半導體裝置進一步包含：一基板接觸件，其鄰接該基板之該第二側；一磊晶接觸件，其鄰接該磊晶層之該第二側；及一基台(submount)。該基台使用一導電材料安裝至一基台接觸件。在一些例項中，該基台接觸件系該磊晶接觸件。在一些例項中，該基台接觸件係該基板接觸件。
該半導體裝置進一步包含一正面基台接觸件。在一些例項中，該正面基台接觸件係不與該基台接觸件相關聯之該磊晶接觸件。在一些例項中，該正面基台接觸件係不與該基台接觸件相關聯之該基板接觸件。該半導體裝置進一步包含鄰接該正面基台接觸件之一接觸延伸部。
在一些實施方案中，該半導體裝置包含鄰接該基台接觸件之一結構化延伸部。
在一些實施方案中，該接觸延伸部係由與該正面基台接觸件相同之材料組成，且該接觸延伸部之特徵在於實質上類似於該正面基台接觸件之一微結構。
在一些實施方案中，該接觸延伸部係由與該正面基台接觸件相同之材料組成，且該接觸延伸部之特徵在於實質上不同於該正面基台接觸件之一微結構。
在另一態樣中，一種半導體裝置陣列包含：一基板，其具有第一及第二相對側；及一磊晶層，其具有第一及第二相對側。該磊晶層之該第一側鄰接該基板之該第一側。該基板之該第一側及該磊晶層之該第一側之特徵在於該基板之該第一側及該磊晶層之該第一側附近內之本質應力。
該半導體裝置陣列進一步包含：一基板接觸件，其鄰接該基板之該第二側；一磊晶接觸件，其鄰接該磊晶層之該第二側；及一基台。該基台使用一導電材料安裝至一基台接觸件。該基台接觸件係該磊晶接觸件或該基板接觸件。該導電黏合材料之特徵在於低於其該導電黏合材料係實質上固態之一熔化溫度。
該半導體裝置陣列進一步包含一正面基台接觸件。在一些例項中，該正面基台接觸件係不與該基台接觸件相關聯之該磊晶接觸件。在一些例項中，該正面基台接觸件係不與該基台接觸件相關聯之該基板接觸件。該半導體裝置陣列進一步包含：一接觸延伸部，其鄰接該正面基台接觸件；及複數個隔離組件，其等在該磊晶層內。該等隔離組件為該半導體裝置陣列內之各半導體裝置劃界。
在一些實施方案中，該接觸延伸部可操作以抵消該基板之該第一側及該磊晶層之該第一側附近內之該等本質應力，使得該半導體裝置陣列採用在高於該導電黏合材料之該熔化溫度的情況下係實質上平面之一形式。
在一些實施方案中，該導電黏合材料可操作以將該半導體裝置陣列固定成在低於該導電黏合材料之該熔化溫度的情況下係實質上平面之該形式。
在一些實施方案中，該半導體裝置陣列進一步包含鄰接該基台接觸件之一結構化延伸部。
在另一態樣中，本發明描述一種用於製造半導體裝置之方法。該方法可包含以下各者：
o 將一總成安裝至一總成固持件上，該總成包括具有第一及第二相對側之一基板；及具有第一及第二相對側之一磊晶層，該磊晶層之該第一側鄰接該基板之該第一側，且該基板之該第二側鄰接該總成固持件；
o 將一磊晶接觸件沈積至該磊晶層之該第二側上；
o 將一接觸延伸部沈積至該磊晶接觸件上；
o 將該總成、該磊晶接觸件及該接觸延伸部安裝至一吸盤上，使得該磊晶層、該磊晶接觸件及該接觸延伸部鄰近於該吸盤；
o 自該總成固持件卸除該總成、該磊晶接觸件、該接觸延伸部及該吸盤；
o 自該基板之該第二側移除該基板之部分；
o 將一基板接觸件沈積至該基板之該第二側上；
o 將該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部及該吸盤定位至一基台上，使得該基台鄰近於該基板之該第二側及該基板接觸件，該基台使用該基板接觸件及該基台之部分之間的一導電材料定位；
o 將該基台、該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部、該吸盤及該導電材料加熱至處於或高於該導電材料之該熔化溫度之一高溫；
o 將該基台、該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部、該吸盤及該導電材料冷卻至低於該高溫之一溫度；
o 自該吸盤卸除該基台、該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部及該導電材料；及
o 將該基台、該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部及該導電材料切割成複數個半導體裝置、一半導體裝置陣列或複數個半導體裝置陣列。
在一些實施方案中，用於製造半導體裝置之該方法進一步包含將一結構化延伸部沈積至該基板接觸件上。
在一些實施方案中，將該總成、該磊晶接觸件及該接觸延伸部安裝至一吸盤上包含將一有機化合物沈積於該吸盤與該磊晶層、該磊晶接觸件及該接觸延伸部之間。
在一些實施方案中，沈積該接觸延伸部包含藉由電沈積、物理氣相沈積或化學氣相沈積沈積該接觸延伸部。
在一些實施方案中，沈積該結構化延伸部包含藉由電沈積、物理氣相沈積或化學氣相沈積沈積該結構化延伸部。
在一些實施方案中，沈積該磊晶接觸件及/或該基板接觸件包含藉由電沈積、物理氣相沈積或化學氣相沈積沈積該等接觸件。
在另一態樣中，一種用於製造半導體裝置之方法可包含以下各者：
o 將一總成安裝至一總成固持件上，該總成包括具有第一及第二相對側之一基板；及具有第一及第二相對側之一磊晶層，該磊晶層之該第一側鄰接該基板之該第一側，且該磊晶層之該第二側鄰接該總成固持件；
o 將一基板接觸件沈積至該磊晶層之該第二側上；
o 將一接觸延伸部沈積至該基板接觸件上；
o 將該總成、該基板接觸件及該接觸延伸部安裝至一吸盤上，使得該基板、該基板接觸件及該接觸延伸部鄰近於該吸盤；
o 自該總成固持件卸除該總成、該基板接觸件、該接觸延伸部及該吸盤；
o 將一磊晶接觸件沈積至該磊晶層之該第二側上；
o 將該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部及該吸盤定位至一基台上，使得該基台鄰近於該磊晶層之該第二側及該磊晶接觸件，該基台使用該磊晶接觸件及該基台之部分之間的一導電材料定位；
o 將該基台、該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部、該吸盤及該導電材料加熱至處於或高於該導電材料之該熔化溫度之一高溫；
o 將該基台、該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部、該吸盤及該導電材料冷卻至低於該高溫之一溫度；
o 自該吸盤卸除該基台、該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部及該導電材料；及
o 將該基台、該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部及該導電材料切割成複數個半導體裝置、一半導體裝置陣列或複數個半導體裝置陣列。
在一些實施方案中，該方法包含將一結構化延伸部沈積至該磊晶接觸件上。
在一些實施方案中，將該總成、該基板接觸件及該接觸延伸部安裝至一吸盤上包含將一有機化合物沈積於該吸盤與該基板、該基板接觸件及該接觸延伸部之間。
在一些實施方案中，沈積該接觸延伸部包含藉由電沈積、物理氣相沈積或化學氣相沈積沈積該接觸延伸部。
在一些實施方案中，沈積該結構化延伸部包含藉由電沈積、物理氣相沈積或化學氣相沈積沈積該結構化延伸部。
在一些實施方案中，沈積該磊晶接觸件及/或該基板接觸件包含藉由電沈積、物理氣相沈積或化學氣相沈積沈積該等接觸件。
將自以下詳細描述、隨附圖式及技術方案明白其他態樣、特徵及優點。
圖1A及圖1B分別描繪實例性半導體裝置陣列100A、100B。半導體裝置陣列100A係一頂部發射垂直腔面發射雷射，且半導體裝置陣列100B係一底部發射垂直腔面發射雷射。本文中所揭示之以下組件可應用於兩種類型之垂直腔面發射雷射，以及其他半導體裝置或半導體裝置陣列。
以下描述係指經設計以作為一單個裝置或模組操作之半導體裝置陣列(諸如半導體裝置之晶圓或較小複數個半導體裝置)，該描述可應用於自半導體裝置陣列分離(例如，切割)之個別或離散半導體裝置。
圖1A及圖1B包含等效組件且在以下描述中被同時提及。一些組件儘管相對於其他組件不同地定位，但仍使用一共同組件名稱描述。其等共同組件名稱指示其等相對於一共同組件(其之位置在兩個半導體裝置陣列100A、100B中不變)之位置。例如，一基台接觸件係圖1A中所描繪之實施例中之一基板接觸件，及圖1B中所描繪之實施例中之一磊晶接觸件。共同組件名稱(在此實例中基台接觸件)係在兩個實施例中用於指代該基板接觸件之位置；即，在第一實施例中鄰近於基台，且在第二實施例中未鄰近於基台；因此，在任何實施例中，基台接觸件位置係鄰近於基台。
半導體裝置陣列100A及100B各包含具有第一相對側104及第二相對側106之一基板102，及具有第一相對側110及第二相對側112之一磊晶層108。基板102及磊晶層108可各由(例如)結晶、多晶或非晶半導體或絕緣材料(諸如砷化鎵、砷化鋁鎵、銻化銦或矽)組成。
基板102及磊晶層108之組合物及厚度取決於半導體裝置之預期應用且因此可在不同實施方案中改變。例如，基板102可由10微米至200微米厚之砷化鎵組成，且磊晶層108可由1微米至20微米厚之砷化鋁鎵組成。
通常，磊晶層108係在基板102之第一側104上作為一結晶層磊晶生長至實質上小於基板102之一厚度。在此等例項中，基板102亦為結晶的且由具有與磊晶層108類似但不相同之一晶格參數之一材料組成。由於晶格參數並不相同，故應力可在基板102之第一側104及磊晶層108之第一側110附近內發生，從而引起基板102及磊晶層108兩者偏離平面性(例如，一彎曲變形)。
半導體裝置陣列100A、100B之各者進一步包含鄰接基板102之第二側106之一基板接觸件114，鄰接磊晶層108之第二側112之一磊晶接觸件116，及一基台118。通常，基板接觸件114及磊晶接觸件116可操作以引導電流至半導體裝置內之組件，諸如經組態以在磊晶層108內產生光126 (例如，包含量子阱)之作用區域。例如，該基台可為預期用於進一步處理之一印刷電路板、一引線框架或一金屬層。
基台118使用一導電材料120 (諸如一可熔金屬合金(例如，銦錫焊料)或一導電複合物(例如，銀環氧樹脂) )安裝至一基台接觸件。該基台接觸件係鄰近於基台118且取決於實施例可為基板接觸件114或磊晶接觸件116。例如，基台接觸件係如圖1A中所描繪之用於頂部發射垂直腔面發射雷射之基板接觸件114。在另一實例中，基台接觸件係如圖1B中所描繪之用於底部發射垂直腔面發射雷射之磊晶接觸件116。
半導體裝置陣列100A、100B之各者進一步包含一正面基台接觸件。如圖1A中所描繪，當磊晶接觸件116不與基台接觸件相關聯時，該正面基台接觸件係磊晶接觸件116。如圖1B中所描繪，當基板接觸件114不與基台接觸件相關聯時，該正面基台接觸件係基板接觸件114。
基台接觸件及正面基台接觸件兩者(且因此基板接觸件114及磊晶接觸件116)可由導電金屬組成。該導電金屬可包含選自由金、銅、銀、鋁、鉑、鈀、銠、銦、銥、鎵、鉍、銻及錫組成之群組之一元素。基台接觸件及正面基台接觸件兩者可藉由化學氣相沈積(例如，金屬有機氣相沈積)、物理氣相沈積(例如，電子束物理氣相沈積)及/或電沈積(例如，電子鑲嵌鍍覆(Damascene plating) )沈積。在一些例項中，正面基台接觸件及/或基台接觸件可包含金屬障壁膜(例如，鉭、氮化鉭)及/或介電質障壁(氮化矽)。
半導體裝置陣列100A、100B之各者進一步包含鄰接正面基台接觸件之一接觸延伸部122。圖1A描繪接觸延伸部122鄰接磊晶接觸件116，如在此實施方案及類似實施方案中，磊晶接觸件116係正面基台接觸件。圖1B描繪接觸延伸部122鄰接基板接觸件114，如在此實施方案及類似實施方案中，基板接觸件114係正面基台接觸件。
在一些例項中，接觸延伸部122係由一導電金屬組成。該導電金屬可包含選自由金、銅、銀、鋁、鉑、鈀、銠、銦、銥、鎵、鉍、銻及錫組成之群組之一元素。因此，接觸延伸部122可操作以經由一電連接件128將電流引導至半導體裝置陣列100A、100B內之組件，諸如經組態以在磊晶層108內產生光126 (例如，包含量子阱)之作用區域，如圖1C中所描繪。然而，接觸延伸部122不需要可操作以將電流引導至組件。例如，基板接觸件114可包含用於電連接件128之一墊130，如圖1D中所描繪。因此，接觸延伸部122可與基板接觸件114電隔離或甚至在一些實施方案中絕緣。
在一些實施方案中，接觸延伸部122可由與正面基台接觸件相同之材料組成且可藉由化學氣相沈積、物理氣相沈積及/或電沈積沈積至正面基台接觸件上。因此，接觸延伸部122可由與正面基台接觸件相同之材料組成，且特徵可在於實質上類似於正面基台接觸件之一微結構。
然而，在一些實施方案中，接觸延伸部122係由與正面基台接觸件相同之材料組成且可藉由與正面基台接觸件不同之方法沈積。例如，在一些例項中，正面基台接觸件係由藉由物理氣相沈積(例如，電子束物理氣相沈積)沈積之金組成，且接觸延伸部係由藉由電沈積沈積之金組成。因此，接觸延伸部122之特徵可在於實質上不同於正面基台接觸件之一微結構。例如，接觸延伸部122可採用一實質上結晶或多晶微結構，且正面基台接觸件可採用一實質上非晶微結構。
此外，在一些實施方案中，接觸延伸部122係由不同於正面基台接觸件之一材料組成且可藉由不同於正面基台接觸件之方法沈積。例如，在一些例項中，正面基台接觸件係由藉由物理氣相沈積(例如，電子束物理氣相沈積)沈積之金組成，且接觸延伸部係由藉由電沈積沈積之銅組成。因此，接觸延伸部122之特徵可在於實質上不同於正面基台接觸件之一組合物及微結構。
接觸延伸部122可操作以抵消基板102之第一側104及磊晶層108之第一側110附近內之本質應力，使得半導體裝置陣列100A、100B採用在高於導電黏合材料120之熔化溫度的情況下係實質上平面之一形式。在一些實施方案中，接觸延伸部可由自1微米至30微米厚之金組成。然而，接觸延伸部122之可操作性取決於許多因素，諸如其組合物、面積、厚度、熱膨脹係數及基板102及磊晶層108附近內之應力，如上文所描述。此外，由各種處理參數引發之在接觸延伸部122內之本質應力可經定製以抵消上文所描述之本質應力。例如，可藉由在電沈積期間調整處理參數(例如，溶液pH、雜質、粒度)而引入接觸延伸部122之微結構內之應力。
儘管接觸延伸部122可操作以在高溫下(即，處於或高於導電黏合劑120之熔化溫度)抵消本質應力，但該效應必須鎖定於較冷溫度下。因此，導電黏合材料120可操作以將半導體裝置陣列100A、100B固定成在低於其熔化溫度的情況下之實質上平面形式。
在一些實施方案(諸如圖1A及圖1B中所描繪之實施方案)中，半導體裝置陣列100A、100B之各者進一步包含鄰接基台接觸件之一結構化延伸部124。結構化延伸部124經組態以改良導電黏合材料120與基台接觸件之黏合。在一些例項中，結構化延伸部124亦可經組態以經由與接觸延伸部122相同之方法抵消上文所描述之本質應力。
接觸延伸部122及結構化延伸部124兩者連同導電黏合材料120經組態使得半導體裝置陣列100A、100B採用在高於導電黏合材料120之熔化溫度的情況下係實質上平面之一形式。接著導電黏合材料120及結構化延伸部124可操作以將半導體裝置陣列100A、100B固定成在低於導電黏合材料120之熔化溫度的情況下係實質上平面之形式。在一些例項中，結構化延伸部124可包含經組態以增加結構化延伸部124與導電黏合材料120之間的接觸區域之鈍齒狀(crenelated)延伸部132，如圖1E中所描繪。
半導體裝置陣列100A、100B進一步包含在磊晶層108內之複數個隔離組件(未描繪)。該複數個隔離組件為半導體裝置陣列100A、100B內之各半導體裝置劃界。例如，磊晶層108內之隔離組件可包含一介電質材料(諸如氧化鋁)。在一些例項中，隔離組件可包含特徵在於由離子轟擊所引起之損壞之磊晶層之部分。在一些例項中，磊晶層內之隔離組件包含磊晶層之經移除部分。該等經移除部分界定台面結構，其中各台面結構為半導體裝置陣列內之半導體裝置之一者劃界。
圖2中繪示用於製造圖1A中所描繪之半導體裝置陣列之一實例性方法200。在202，將一總成安裝至一總成固持件(諸如一真空吸盤)上。該總成包含具有第一相對側104及第二相對側106之基板102，及具有第一相對側110及第二相對側112之磊晶層108。磊晶層108之第一側110鄰接基板102之第一側104，且基板102之第二側106鄰接該總成固持件。如上文所描述，磊晶層108可根據此項技術之一般技術者明白之方法磊晶生長於基板102上。
在204，將磊晶接觸件116沈積至磊晶層108之第二側112上。如上文所描述，磊晶接觸件116可經由化學氣相沈積、物理氣相沈積及/或電沈積沈積。在一些例項中，磊晶接觸件116可為1000埃至2000埃，但在其他例項中，磊晶接觸件116可為5微米厚或更多。
在206，將接觸延伸部122沈積至磊晶接觸件116上。如上文所描述，接觸延伸部122可經由化學氣相沈積、物理氣相沈積及/或電沈積沈積。在一些例項中，接觸延伸部122可為1微米或高達20微米，或甚至30微米厚。在一些例項中，磊晶接觸件116作為用於接觸延伸部122之一晶種層。
在208，將總成、磊晶接觸件116及接觸延伸部122安裝至一吸盤(例如，一真空吸盤)上，使得磊晶層108、磊晶接觸件116及接觸延伸部122鄰近於該吸盤。在一些例項中，使用定位於吸盤與磊晶層108、磊晶接觸件116及接觸延伸部122之間的一有機化合物將總成、磊晶接觸件116及接觸延伸部122安裝至吸盤上。該有機化合物可為經設計以最小化對前述組件之損壞之一蠟、樹脂或其他可成型材料。
在210，自總成固持件卸除總成、磊晶接觸件116、接觸延伸部122及吸盤。
在212，自基板102之第二側106移除基板102之部分。基板102之部分可藉由標準方法(諸如研磨、研光或拋光)移除。例如，基板102可為700微米厚且可經受研磨、研光或拋光直至其為(例如) 100微米至200微米厚。
在214，將基板接觸件114沈積至基板102之第二側106上。如上文所描述，基板接觸件114可經由化學氣相沈積、物理氣相沈積及/或電沈積沈積。在一些例項中，基板接觸件114係1000埃至2000埃，但在其他例項中，基板接觸件114係5微米或更多。在一些例項中，將一結構化延伸部124沈積至基板接觸件上。結構化延伸部124可經由化學氣相沈積、物理氣相沈積及/或電沈積沈積。在一些例項中，結構化延伸部124係1微米或高達20微米，或甚至30微米厚。在一些例項中，基板接觸件114作為用於結構化延伸部124之一晶種層。在一些例項中，結構化延伸部124可呈鈍齒狀或以其他方式結構化以增加結構化延伸部表面區域。
在216，將基板接觸件114、總成、磊晶接觸件116、接觸延伸部122及吸盤定位至基台118上，使得基台118鄰近於基板102之第二側106及基板接觸件114。基台118係使用基板接觸件114及基台118之部分之間的導電材料120定位。
在218，將基台118、基板接觸件114、總成、磊晶接觸件116、接觸延伸部122、吸盤及導電材料120加熱至處於或高於導電材料120之熔化溫度之一高溫達取決於導電黏合材料120之一持續時間。例如，可將前述組件加熱至200o C、300o C或甚至350o C達15分鐘、一小時或甚至數小時。在一些例項中，可在一惰性氣氛(例如，N2 、Ar)或還原氣氛(例如，95:5 N2 :H)中加熱前述組件。
在220，將基台118、基板接觸件114、總成、磊晶接觸件116、接觸延伸部122、吸盤及導電材料120冷卻至低於高溫之一溫度。
在222，自吸盤卸除基台118、基板接觸件116、總成、磊晶接觸件116、接觸延伸部122及導電材料120。
在224，將基台118、基板接觸件114、總成、磊晶接觸件116、接觸延伸部122及導電材料120分離(例如，切割)成複數個離散半導體裝置、一半導體裝置陣列或複數個半導體裝置陣列。
圖3中繪示用於製造圖1B中所描繪之半導體裝置陣列之一實例性方法300。在302，將一總成安裝至一總成固持件上。該總成包含具有第一相對側104及第二相對側106之基板102，及具有第一相對側110及第二相對側112之磊晶層108。磊晶層108之第一側110鄰接基板102之第一側104，且磊晶層108之第二側112鄰接該總成固持件。如上文所描述，磊晶層108可磊晶生長於基板102上。
在304，將基板接觸件114沈積至磊晶層108之第二側110上。如上文所描述，基板接觸件114可經由化學氣相沈積、物理氣相沈積及/或電沈積沈積。在一些例項中，基板接觸件114係1000埃至2000埃，但在其他例項中，基板接觸件114係5微米厚或更多。
在306，將接觸延伸部122沈積至基板接觸件114上。如上文所描述，接觸延伸部122可經由化學氣相沈積、物理氣相沈積及/或電沈積沈積。在一些例項中，接觸延伸部122係1微米或高達20微米，或甚至30微米厚。在一些例項中，基板接觸件114作為用於接觸延伸部122之一晶種層。
在308，將總成、基板接觸件114及接觸延伸部122安裝至一吸盤(例如，真空吸盤)上，使得基板102、基板接觸件114及接觸延伸部122鄰近於該吸盤。在一些例項中，總成、基板接觸件114及接觸延伸部122係使用定位於吸盤與基板102、基板接觸件114及接觸延伸部122之間的一有機化合物安裝至吸盤上。該有機化合物可為經設計以最小化對前述組件之損壞之一蠟、樹脂或其他可成型材料。
在310，自總成固持件卸除總成、基板接觸件114、接觸延伸部122及吸盤。
在312，將磊晶接觸件116沈積至磊晶層108之第二側112上。如上文所描述，磊晶接觸件116可經由化學氣相沈積、物理氣相沈積及/或電沈積沈積。在一些例項中，磊晶接觸件116係1000埃至2000埃，但在其他例項中，磊晶接觸件116係5微米或更多。在一些例項中，將一結構化延伸部124沈積至磊晶接觸件116上。結構化延伸部124可經由化學氣相沈積、物理氣相沈積及/或電沈積沈積。在一些例項中，結構化延伸部124係1微米或高達20微米，或甚至30微米厚。在一些例項中，磊晶接觸件116作為用於結構化延伸部124之一晶種層。在一些例項中，結構化延伸部124可為鈍齒狀或以其他方式結構化以增加結構化延伸部表面區域。
在314，將磊晶接觸件116、總成、基板接觸件114、接觸延伸部122及吸盤定位至基台118上，使得基台118鄰近於磊晶層108之第二側112及磊晶接觸件116。基台118係使用磊晶接觸件116及基台118之部分之間的導電材料120定位。
在316，將基台118、磊晶接觸件116、總成、基板接觸件114、接觸延伸部122、吸盤及導電材料120加熱至處於或高於導電材料120之熔化溫度之一高溫達取決於導電黏合材料120之一持續時間。例如，可將前述組件加熱至200o C、300o C或甚至350o C達15分鐘、一小時或甚至數小時。在一些例項中，可在一惰性氣氛(例如，N2 、Ar)或還原氣氛(例如，95:5 N2 :H)中加熱前述組件。
在318，將基台、磊晶接觸件116、總成、基板接觸件114、接觸延伸部122、吸盤及導電材料120冷卻至低於高溫之一溫度。
在320，自吸盤卸除基台118、磊晶接觸件116、總成、基板接觸件114、接觸延伸部122及導電材料120。
在322，將基台118、磊晶接觸件116、總成、基板接觸件114、接觸延伸部122及導電材料120分離(例如，切割)成複數個離散半導體裝置、一半導體裝置陣列或複數個半導體裝置陣列。
可對前文實施方案進行其他修改。例如，前文實例性程序可包含額外步驟，諸如施加、顯影及移除光阻劑；熱處理(例如，退火)；平坦化；及焊接。另外，上文所描述之半導體裝置可包含額外組件，諸如額外電連接件、電流及/或光界定孔徑等等。此外，上文在不同實施方案中描述之特徵可在相同實施方案中組合。因此，其他實施方案係在發明申請專利範圍之範疇內。
100A‧‧‧半導體裝置陣列
100B‧‧‧半導體裝置陣列
102‧‧‧基板
104‧‧‧第一相對側/第一側
106‧‧‧第二相對側/第二側
108‧‧‧磊晶層
110‧‧‧第一相對側/第一側
112‧‧‧第二相對側/第二側
114‧‧‧基板接觸件
116‧‧‧磊晶接觸件
118‧‧‧基台
120‧‧‧導電材料/導電黏合材料/導電黏合劑
122‧‧‧接觸延伸部
124‧‧‧結構化延伸部
126‧‧‧光
128‧‧‧電連接件
130‧‧‧墊
132‧‧‧鈍齒狀延伸部
200‧‧‧方法
202‧‧‧步驟
204‧‧‧步驟
206‧‧‧步驟
208‧‧‧步驟
210‧‧‧步驟
212‧‧‧步驟
214‧‧‧步驟
216‧‧‧步驟
218‧‧‧步驟
220‧‧‧步驟
222‧‧‧步驟
224‧‧‧步驟
300‧‧‧方法
302‧‧‧步驟
304‧‧‧步驟
306‧‧‧步驟
308‧‧‧步驟
310‧‧‧步驟
312‧‧‧步驟
314‧‧‧步驟
316‧‧‧步驟
318‧‧‧步驟
320‧‧‧步驟
322‧‧‧步驟
圖1A描繪一實例性半導體裝置陣列，其中將該等半導體裝置繪示為頂部發射垂直腔面發射雷射之一陣列。
圖1B描繪另一實例性半導體裝置陣列，其中將該等半導體裝置繪示為底部發射垂直腔面發射雷射之一陣列。
圖1C描繪圖1A中所描繪之該實例性半導體裝置陣列內之一放大區域。
圖1D及圖1E描繪圖1B中所描繪之實例性半導體裝置陣列內之放大區域。
圖2繪示用於製造一半導體裝置或半導體裝置陣列(諸如圖1A中所描繪之半導體裝置陣列)之一實例性方法。
圖3繪示用於製造一半導體裝置或半導體裝置陣列(諸如圖1B中所描繪之半導體裝置陣列)之一實例性方法。

Claims (46)

  1. 一種半導體裝置，其包括： 一基板，其具有第一及第二相對側； 一磊晶層，其具有第一及第二相對側，該磊晶層之該第一側鄰接該基板之該第一側； 一基板接觸件，其鄰接該基板之該第二側； 一磊晶接觸件，其鄰接該磊晶層之該第二側； 一基台，其使用一導電材料安裝至一基台接觸件，該基台接觸件為該磊晶接觸件或該基板接觸件； 一正面基台接觸件，該正面基台接觸件為不與該基台接觸件相關聯之該磊晶接觸件或該基板接觸件；及 一接觸延伸部，其鄰接該正面基台接觸件。
  2. 如請求項1之半導體裝置，其進一步包含鄰接該基台接觸件之一結構化延伸部。
  3. 如請求項1之半導體裝置，其中該接觸延伸部係由與該正面基台接觸件相同之材料組成，且該接觸延伸部之特徵在於實質上類似於該正面基台接觸件之一微結構。
  4. 如請求項1之半導體裝置，其中該接觸延伸部係由與該正面基台接觸件相同之材料組成，且該接觸延伸部之特徵在於實質上不同於該正面基台接觸件之一微結構。
  5. 如請求項4之半導體裝置，其中該接觸延伸部之特徵在於一實質上結晶或多晶微結構且該正面基台接觸件之特徵在於一實質上非晶微結構。
  6. 如請求項1之半導體裝置，其中該接觸延伸部係由一導電金屬組成。
  7. 如請求項6之半導體裝置，其中該導電金屬包含選自由金、銅、銀、鋁、鉑、鈀、銠、銦、銥、鎵、鉍、銻及錫組成之群組之一元素。
  8. 如請求項1之半導體裝置，其中該導電黏合劑包含一可熔金屬合金或一導電複合物。
  9. 如請求項1之半導體裝置，其中該正面基台接觸件係由一導電金屬組成，其中該導電金屬包含選自由金、銅、銀、鋁、鉑、鈀、銠、銦、銥、鎵、鉍、銻及錫組成之群組之一元素。
  10. 如請求項3之半導體裝置，其中該結構化延伸部包含經組態以增加該結構化延伸部與該導電黏合材料之間的該接觸區域之鈍齒狀延伸部。
  11. 如請求項1之半導體裝置，其中該接觸延伸部具有1微米至30微米之一厚度。
  12. 如請求項1之半導體裝置，其中該基板係由砷化鎵組成且係10微米至200微米厚，該磊晶層係由砷化鋁鎵組成且係1微米至20微米厚，該磊晶接觸件係由金組成且係0.1微米至5微米厚，該基板接觸件係由金組成且係0.1微米至5微米厚，且該接觸延伸部係1微米至25微米厚。
  13. 如請求項12之半導體裝置，其中該基板係100微米厚，該磊晶層係10微米厚，該磊晶接觸件係0.1微米厚，該基板接觸件係0.1微米厚，且該接觸延伸部係20微米厚。
  14. 如請求項1之半導體裝置，其中該半導體裝置係一垂直腔面發射雷射。
  15. 如請求項14之半導體裝置，其中該磊晶層包含一分佈式布拉格反射器及一作用區域，且該基板、該磊晶層、該磊晶接觸件、該基板接觸件及該基台可操作以產生光。
  16. 如請求項14之半導體裝置，其中該垂直腔面發射雷射係一頂部發射垂直腔面發射雷射。
  17. 如請求項14之半導體裝置，其中該垂直腔面發射雷射係一底部發射垂直腔面發射雷射。
  18. 一種半導體裝置陣列，該陣列包括： 一基板，其具有第一及第二相對側； 一磊晶層，其具有第一及第二相對側，該磊晶層之該第一側鄰接該基板之該第一側，其中該基板之該第一側及該磊晶層之該第一側之特徵在於該基板之該第一側及該磊晶層之該第一側附近內之本質應力； 一基板接觸件，其鄰接該基板之該第二側； 一磊晶接觸件，其鄰接該磊晶層之該第二側； 一基台，其使用一導電材料安裝至一基台接觸件，該基台接觸件為該磊晶接觸件或該基板接觸件； 該導電黏合材料之特徵在於低於其該導電黏合材料係實質上固態之一熔化溫度； 一正面基台接觸件，該正面基台接觸件為不與該基台接觸件相關聯之該磊晶接觸件或該基板接觸件； 一接觸延伸部，其鄰接該正面基台接觸件；及 複數個隔離組件，其等在該磊晶層內，該複數個隔離組件為該半導體裝置陣列內之各半導體裝置劃界。
  19. 如請求項18之半導體裝置陣列，其中該接觸延伸部可操作以抵消該基板之該第一側及該磊晶層之該第一側附近內之該等本質應力，使得該半導體裝置陣列採用在高於該導電黏合材料之該熔化溫度的情況可下係實質上平面之一形式。
  20. 如請求項19之半導體裝置陣列，其中該導電黏合材料可操作以將該半導體裝置陣列固定成在低於該導電黏合材料之該熔化溫度的情況下係實質上平面之該形式。
  21. 如請求項18之半導體裝置陣列，其進一步包含鄰接該基台接觸件之一結構化延伸部。
  22. 如請求項21之半導體裝置陣列，其中該接觸延伸部可操作以抵消該基板之該第一側及該磊晶層之該第一側附近內之本質應力，使得該半導體裝置陣列採用在高於該導電黏合材料之該熔化溫度的情況下係實質上平面之一形式，且該導電黏合材料及該結構化延伸部可操作以將該半導體裝置陣列固定成在低於該導電黏合材料之該熔化溫度的情況下係實質上平面之該形式。
  23. 如請求項22之半導體裝置陣列，其中該結構化延伸部包含經組態以增加該結構化延伸部與該導電黏合材料之間的該接觸區域之鈍齒狀延伸部。
  24. 如請求項18之半導體裝置陣列，其中該接觸延伸部係由與該正面基台接觸件相同之材料組成，且該接觸延伸部之特徵在於實質上類似於該正面基台接觸件之一微結構。
  25. 如請求項18之半導體裝置陣列，其中該接觸延伸部係由與該正面基台接觸件相同之材料組成，且該接觸延伸部之特徵在於實質上不同於該正面基台接觸件之一微結構。
  26. 如請求項25之半導體裝置陣列，其中該接觸延伸部之特徵在於一實質上結晶或多晶微結構且該正面基台接觸件之特徵在於一實質上非晶微結構。
  27. 如請求項18之半導體裝置陣列，其中該磊晶層內之該隔離組件包含一介電質材料。
  28. 如請求項27之半導體裝置陣列，其中該介電質材料係氧化鋁。
  29. 如請求項18之半導體裝置陣列，其中該磊晶層內之該隔離組件包含特徵在於由離子轟擊所引起之損壞之該磊晶層之部分。
  30. 如請求項18之半導體裝置陣列，其中該磊晶層內之該複數個隔離組件包含該磊晶層之經移除部分，該等經移除部分形成台面結構，其中各台面結構為該半導體裝置陣列內之該等半導體裝置之一者劃界。
  31. 如請求項18之半導體裝置陣列，其中該基板之該第一側及該磊晶層之該第一側附近內之該等本質應力係歸因於該基板與該磊晶層之間的一晶格參數失配，及/或該基板與該磊晶層之間的一熱膨脹係數失配。
  32. 如請求項18之半導體裝置陣列，其中該半導體裝置係一垂直腔面發射雷射。
  33. 如請求項18之半導體裝置陣列，其中該垂直腔面發射雷射係一頂部發射垂直腔面發射雷射。
  34. 如請求項18之半導體裝置陣列，其中該垂直腔面發射雷射係一底部發射垂直腔面發射雷射。
  35. 一種製造半導體裝置之方法，該方法包括： 將一總成安裝至一總成固持件上，該總成包括具有第一及第二相對側之一基板；及具有第一及第二相對側之一磊晶層，該磊晶層之該第一側鄰接該基板之該第一側，且該基板之該第二側鄰接該總成固持件； 將一磊晶接觸件沈積至該磊晶層之該第二側上； 將一接觸延伸部沈積至該磊晶接觸件上； 將該總成、該磊晶接觸件及該接觸延伸部安裝至一吸盤上，使得該磊晶層、該磊晶接觸件及該接觸延伸部鄰近於該吸盤； 自該總成固持件卸除該總成、該磊晶接觸件、該接觸延伸部及該吸盤； 自該基板之該第二側移除該基板之部分； 將一基板接觸件沈積至該基板之該第二側上； 將該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部及該吸盤定位至一基台上，使得該基台鄰近於該基板之該第二側及該基板接觸件，該基台使用該基板接觸件及該基台之部分之間的一導電材料定位； 將該基台、該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部、該吸盤及該導電材料加熱至處於或高於該導電材料之熔化溫度之一高溫； 將該基台、該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部、該吸盤及該導電材料冷卻至低於該高溫之一溫度； 自該吸盤卸除該基台、該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部及該導電材料；及 將該基台、該基板接觸件、該總成、該磊晶接觸件、該接觸延伸部及該導電材料切割成複數個半導體裝置、一半導體裝置陣列或複數個半導體裝置陣列。
  36. 如請求項35之方法，其進一步包含將一結構化延伸部沈積至該基板接觸件上。
  37. 如請求項35之方法，其中將該總成、該磊晶接觸件及該接觸延伸部安裝至一吸盤上包含：將一有機化合物沈積於該吸盤與該磊晶層、該磊晶接觸件及該接觸延伸部之間。
  38. 如請求項35之方法，其中沈積該接觸延伸部包含：藉由電沈積、物理氣相沈積或化學氣相沈積沈積該接觸延伸部。
  39. 如請求項36之方法，其中沈積該結構化延伸部包含：藉由電沈積、物理氣相沈積或化學氣相沈積沈積該結構化延伸部。
  40. 如請求項35之方法，其中沈積該磊晶接觸件及/或該基板接觸件包含：藉由電沈積、物理氣相沈積或化學氣相沈積沈積該等接觸件。
  41. 一種製造半導體裝置之方法，該方法包括： 將一總成安裝至一總成固持件上，該總成包括具有第一及第二相對側之一基板；及具有第一及第二相對側之一磊晶層，該磊晶層之該第一側鄰接該基板之該第一側，且該磊晶層之該第二側鄰接該總成固持件； 將一基板接觸件沈積至該磊晶層之該第二側上； 將一接觸延伸部沈積至該基板接觸件上； 將該總成、該基板接觸件及該接觸延伸部安裝至一吸盤上，使得該基板、該基板接觸件及該接觸延伸部鄰近於該吸盤； 自該總成固持件卸除該總成、該基板接觸件、該接觸延伸部及該吸盤； 將一磊晶接觸件沈積至該磊晶層之該第二側上； 將該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部及該吸盤定位至一基台上，使得該基台鄰近於該磊晶層之該第二側及該磊晶接觸件，該基台使用該磊晶接觸件及該基台之部分之間的一導電材料定位； 將該基台、該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部、該吸盤及該導電材料加熱至處於或高於該導電材料之熔化溫度之一高溫； 將該基台、該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部、該吸盤及該導電材料冷卻至低於該高溫之一溫度； 自該吸盤卸除該基台、該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部及該導電材料；及 將該基台、該磊晶接觸件、該總成、該基板接觸件、該接觸延伸部及該導電材料切割成複數個半導體裝置、一半導體裝置陣列或複數個半導體裝置陣列。
  42. 如請求項41之方法，其進一步包含：將一結構化延伸部沈積至該磊晶接觸件上。
  43. 如請求項41之方法，其中將該總成、該基板接觸件及該接觸延伸部安裝至一吸盤上包含：將一有機化合物沈積於該吸盤與該基板、該基板接觸件及該接觸延伸部之間。
  44. 如請求項41之方法，其中沈積該接觸延伸部包含：藉由電沈積、物理氣相沈積或化學氣相沈積沈積該接觸延伸部。
  45. 如請求項42之方法，其中沈積該結構化延伸部包含：藉由電沈積、物理氣相沈積或化學氣相沈積沈積該結構化延伸部。
  46. 如請求項41之方法，其中沈積該磊晶接觸件及/或該基板接觸件包含：藉由電沈積、物理氣相沈積或化學氣相沈積沈積該等接觸件。
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