CN111788671A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN111788671A
CN111788671A CN201880090259.6A CN201880090259A CN111788671A CN 111788671 A CN111788671 A CN 111788671A CN 201880090259 A CN201880090259 A CN 201880090259A CN 111788671 A CN111788671 A CN 111788671A
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contact
substrate
extension
epitaxial
submount
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C·高希
许国阳
王清
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Ams Osram International GmbH
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Princeton Optoelectronics
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Abstract

公开了诸如垂直腔表面发射激光器的半导体装置及其制造方法。半导体装置包括接触延伸部及导电粘合材料，诸如可熔金属合金或导电复合物。在一些情况下，半导体装置还包括结构化接触件。这些部件允许制造具有最小变形的半导体装置。例如，可制造展现少许弯曲至不弯曲的垂直腔表面发射激光器阵列。在一些情况下，具有最小变形的半导体装置展现了增强的效能。

Description

半导体装置及其制造方法
背景技术
半导体装置可包括具有本征应力的部件。例如，外延生长层可展现与外延生长层生长在其上的基板错位(mismatch)的晶格参数。该错位导致例如在两个部件之间的界面附近内发生的应变。此外，在一些情况下，半导体装置内的各种部件的热膨胀系数可彼此显着不同，从而导致在半导体装置的制造或操作期间的热应力。这些效应可引起半导体装置中的可测量变形(例如，弯曲)。该变形在半导体装置的阵列或晶圆中可以是显着的。对于需要大体上平坦(无变形)的半导体装置阵列的应用，变形可能特别成问题。
应变补偿层在本领域是已知的。然而，应变补偿层(诸如介电应变补偿层)在一些情况下可能难以实施。因此，需要替代解决方案。
发明内容
本公开描述展现少许变形至没有变形的半导体装置(诸如离散半导体装置或半导体装置阵列)及其制造方法。例如，在一个方面，一种半导体装置包括：基板，其具有相对的第一侧及第二侧；以及外延层，其具有相对的第一侧及第二侧。外延层的第一侧邻接基板的第一侧。
半导体装置还包括：基板接触件，其邻接基板的第二侧；外延接触件，其邻接外延层的第二侧；及子底座(submount)。子底座通过导电材料安装至子底座接触件。在一些情况下，子底座接触件是外延接触件。在一些情况下，子底座接触件是基板接触件。
半导体装置还包括正面(obverse)子底座接触件。在一些情况下，正面子底座接触件是不与子底座接触件相关联的外延接触件。在一些情况下，正面子底座接触件是不与子底座接触件相关联的基板接触件。半导体装置还包括邻接正面子底座接触件的接触延伸部。
在一些实施方式中，半导体装置包括邻接子底座接触件的结构化延伸部。
在一些实施方式中，接触延伸部是由与正面子底座接触件相同的材料组成，且接触延伸部的特征在于大体上类似于正面子底座接触件的微结构。
在一些实施方式中，接触延伸部是由与正面子底座接触件相同的材料组成，且接触延伸部的特征在于大体上不同于正面子底座接触件的微结构。
在另一方面中，一种半导体装置阵列包括：基板，其具有相对的第一侧及第二侧；以及外延层，其具有相对的第一侧及第二侧。外延层的第一侧邻接基板的第一侧。基板的第一侧及外延层的第一侧的特征在于基板的第一侧及外延层的第一侧附近内的本征应力。
半导体装置阵列还包括：基板接触件，其邻接基板的第二侧；外延接触件，其邻接外延层的第二侧；以及子底座。子底座通过导电材料安装至子底座接触件。子底座接触件是外延接触件或基板接触件。导电粘合材料的特征在于熔化温度，导电粘合材料在低于其时是大体上固态的。
半导体装置阵列还包括正面子底座接触件。在一些情况下，正面子底座接触件是不与子底座接触件相关联的外延接触件。在一些情况下，正面子底座接触件是不与子底座接触件相关联的基板接触件。半导体装置阵列还包括：接触延伸部，其邻接正面子底座接触件；以及多个隔离部件，其位于外延层内。隔离部划分半导体装置阵列内的各个半导体装置。
在一些实施方式中，接触延伸部可操作以抵消基板的第一侧及外延层的第一侧附近内的本征应力，使得半导体装置阵列采用在高于导电粘合材料的熔化温度的情况下是大体上平面的形式。
在一些实施方式中，导电粘合材料可操作以将半导体装置阵列固定成在低于导电粘合材料的熔化温度的情况下是大体上平面的形式。
在一些实施方式中，半导体装置阵列还包括邻接子底座接触件的结构化延伸部。
在另一方面中，本发明描述一种用于制造半导体装置的方法。该方法可包括：
○将组件安装至组件保持器上，组件包括具有相对的第一侧及第二侧的基板；以及具有相对的第一侧及第二侧的外延层，外延层的第一侧邻接基板的第一侧，且基板的第二侧邻接组件保持器；
○将外延接触件沉积至外延层的第二侧上；
○将接触延伸部沉积至外延接触件上；
○将组件、外延接触件及接触延伸部安装至吸盘上，使得外延层、外延接触件及接触延伸部邻近于吸盘；
○从组件保持器卸除组件、外延接触件、接触延伸部及吸盘；
○从基板的第二侧移除基板的部分；
○将基板接触件沉积至基板的第二侧上；
○将基板接触件、组件、外延接触件、接触延伸部及吸盘定位至子底座上，使得子底座邻近于基板的第二侧及基板接触件，子底座通过基板接触件及子底座的部分之间的导电材料定位；
○将子底座、基板接触件、组件、外延接触件、接触延伸部、吸盘及导电材料加热至处于或高于导电材料的熔化温度的升高的温度；
○将子底座、基板接触件、组件、外延接触件、接触延伸部、吸盘及导电材料冷却至低于升高的温度的温度；
○从吸盘卸除子底座、基板接触件、组件、外延接触件、接触延伸部及导电材料；以及
○将子底座、基板接触件、组件、外延接触件、接触延伸部及导电材料切割成多个半导体装置、半导体装置阵列或多个半导体装置阵列。
在一些实施方式中，用于制造半导体装置的方法还包括将结构化延伸部沉积至基板接触件上。
在一些实施方式中，将组件、外延接触件及接触延伸部安装至吸盘上包括将有机化合物沉积于吸盘与外延层、外延接触件及接触延伸部之间。
在一些实施方式中，沉积接触延伸部包括通过电沉积、物理气相沉积或化学气相沉积来沉积接触延伸部。
在一些实施方式中，沉积结构化延伸部包括通过电沉积、物理气相沉积或化学气相沉积来沉积结构化延伸部。
在一些实施方式中，沉积外延接触件和/或基板接触件包括通过电沉积、物理气相沉积或化学气相沉积来沉积接触件。
在另一方面中，一种用于制造半导体装置的方法可包括：
○将组件安装至组件保持器上，组件包括具有相对的第一侧及第二侧的基板；以及具有相对的第一侧及第二侧的外延层，外延层的第一侧邻接基板的第一侧，且外延层的第二侧邻接组件保持器；
○将基板接触件沉积至外延层的第二侧上；
○将接触延伸部沉积至基板接触件上；
○将组件、基板接触件及接触延伸部安装至吸盘上，使得基板、基板接触件及接触延伸部邻近于吸盘；
○从组件保持器卸除组件、基板接触件、接触延伸部及吸盘；
○将外延接触件沉积至外延层的第二侧上；
○将外延接触件、组件、基板接触件、接触延伸部及吸盘定位至子底座上，使得子底座邻近于外延层的第二侧及外延接触件，子底座通过外延接触件及子底座的部分之间的导电材料定位；
○将子底座、外延接触件、组件、基板接触件、接触延伸部、吸盘及导电材料加热至处于或高于导电材料的熔化温度的升高的温度；
○将子底座、外延接触件、组件、基板接触件、接触延伸部、吸盘及导电材料冷却至低于升高的温度的温度；
○从吸盘卸除子底座、外延接触件、组件、基板接触件、接触延伸部及导电材料；以及
○将子底座、外延接触件、组件、基板接触件、接触延伸部及导电材料切割成多个半导体装置、半导体装置阵列或多个半导体装置阵列。
在一些实施方式中，该方法包括将结构化延伸部沉积至外延接触件上。
在一些实施方式中，将组件、基板接触件及接触延伸部安装至吸盘上包括将有机化合物沉积于吸盘与基板、基板接触件及接触延伸部之间。
在一些实施方式中，沉积接触延伸部包括通过电沉积、物理气相沉积或化学气相沉积来沉积接触延伸部。
在一些实施方式中，沉积结构化延伸部包括通过电沉积、物理气相沉积或化学气相沉积来沉积结构化延伸部。
在一些实施方式中，沉积外延接触件和/或基板接触件包括通过电沉积、物理气相沉积或化学气相沉积来沉积接触件。
通过以下详细描述、附图及权利要求，其他方面、特征及优点将变得显而易见。
附图说明
图1A描绘了一个示例性半导体装置阵列，其中半导体装置被示出为顶部发射垂直腔表面发射激光器阵列。
图1B描绘了另一示例性半导体装置阵列，其中半导体装置被示出为底部发射垂直腔表面发射激光器阵列。
图1C描绘了图1A中所描绘的示例性半导体装置阵列内的放大区域。
图1D及图1E描绘了图1B中所描绘的示例性半导体装置阵列内的放大区域。
图2示出了用于制造半导体装置或半导体装置阵列(诸如图1A中所描绘的半导体装置阵列)的一个示例性方法。
图3示出了用于制造半导体装置或半导体装置阵列(诸如图1B中所描绘的半导体装置阵列)的一个示例性方法。
具体实施方式
图1A及图1B分别描绘了示例性半导体装置阵列100A、示例性半导体装置阵列100B。半导体装置阵列100A是顶部发射垂直腔表面发射激光器，并且半导体装置阵列100B是底部发射垂直腔表面发射激光器。本文中公开的以下部件可应用于两种类型的垂直腔表面发射激光器，以及其他半导体装置或半导体装置阵列。
以下描述参考了被设计以为单个装置或模组操作的半导体装置阵列(诸如半导体装置的晶圆或较小的多个半导体装置)，该描述可应用于从半导体装置阵列分离(例如，切割)的单独或离散半导体装置。
图1A及图1B包括相同部件且在以下描述中被同时参考。尽管相对于其他部件不同地定位，但是一些部件使用共同的部件名称描述。它们共同的部件名称指示它们相对于共同部件(其位置在两个半导体装置阵列100A、100B中不变)的位置。例如，子底座(submount)接触件是图1A中所描绘的实施例中的基板接触件，以及图1B中所描绘的实施例中的外延接触件。共同的部件名称(在此示例中为子底座接触件)在两个实施例中用于指代基板接触件的位置；也就是说，在第一实施例中邻近于子底座，且在第二实施例中未邻近于子底座；因此，在任何实施例中，子底座接触件位置是邻近于子底座。
半导体装置阵列100A及100B各包括具有相对的第一侧104及第二侧106的基板102，以及具有相对的第一侧110及第二侧112的外延层108。基板102及外延层108可各自由例如结晶、多晶或非晶半导体或绝缘材料(诸如砷化镓、铝砷化镓、锑化铟或硅)组成。
基板102及外延层108的组成及厚度取决于半导体装置的预期应用，并且因此可在不同实施方式中变化。例如，基板102可由10微米至200微米厚的砷化镓组成，且外延层108可由1微米至20微米厚的铝砷化镓组成。
通常，外延层108在基板102的第一侧104上作为结晶层外延生长至大体上小于基板102的厚度。在这样的情况下，基板102也是结晶的且由具有与外延层108类似但不相同的晶格参数的材料组成。由于晶格参数并不相同，所以应力可在基板102的第一侧104及外延层108的第一侧110附近内发生，从而引起基板102及外延层108两者偏离平面(例如，弯曲变形)。
半导体装置阵列100A、100B中的每一个还包括邻接基板102的第二侧106的基板接触件114，邻接外延层108的第二侧112的外延接触件116，以及子底座118。通常，基板接触件114及外延接触件116可操作以引导电流至半导体装置内的部件，诸如被配置为在外延层108内产生光126的有源区域(例如，包括量子阱)。例如，子底座可以诗预期用于进一步处理的印刷电路板、引线框架或金属层。
子底座118使用导电材料120(诸如可熔金属合金(例如，铟锡焊料)或导电复合物(例如，银环氧树脂))安装至子底座接触件。子底座接触件邻近于子底座118且取决于实施例可为基板接触件114或外延接触件116。例如，子底座接触件是如图1A中所描绘的用于顶部发射垂直腔表面发射激光器的基板接触件114。在另一示例中，子底座接触件是如图1B中所描绘的用于底部发射垂直腔表面发射激光器的外延接触件116。
半导体装置阵列100A、100B中的每一个还包括正面子底座接触件。如图1A中所描绘，当外延接触件116不与子底座接触件相关联时，正面子底座接触件是外延接触件116。如图1B中所描绘，当基板接触件114不与子底座接触件相关联时，正面子底座接触件是基板接触件114。
子底座接触件及正面子底座接触件两者(且因此基板接触件114及外延接触件116)可由导电金属组成。导电金属可包括选自由以下组成的组中的一个元素：金、铜、银、铝、铂、钯、铑、铟、铱、镓、铋、锑及锡。子底座接触件及正面子底座接触件两者可通过化学气相沉积(例如，金属有机气相沉积)、物理气相沉积(例如，电子束物理气相沉积)和/或电沉积(例如，电子镶嵌镀覆(Damascene plating))沉积。在一些情况下，正面子底座接触件和/或子底座接触件可包括金属阻挡膜(barrier film)(例如，钽、氮化钽)和/或介电质阻挡(氮化硅)。
半导体装置阵列100A、100B中的每一个还包括邻接正面子底座接触件的接触延伸部122。图1A描绘了接触延伸部122邻接外延接触件116，如在该实施方式及类似实施方式中，外延接触件116是正面子底座接触件。图1B描绘了接触延伸部122邻接基板接触件114，如在该实施方式及类似实施方式中，基板接触件114是正面子底座接触件。
在一些情况下，接触延伸部122由导电金属组成。导电金属可包括选自由以下组成的组中的一个元素：金、铜、银、铝、铂、钯、铑、铟、铱、镓、铋、锑及锡。因此，接触延伸部122可操作以经由电连接件128将电流引导至半导体装置阵列100A、100B内的部件，诸如被配置为在外延层108内产生光126的有源区域(例如，包括量子阱)，如图1C中所描绘的。然而，接触延伸部122不需要可操作以将电流引导至部件。例如，基板接触件114可包括用于电连接件128的板130，如图1D中所描绘的。因此，接触延伸部122可与基板接触件114电隔离或甚至在一些实施方式中绝缘。
在一些实施方式中，接触延伸部122可由与正面子底座接触件相同的材料组成且可通过化学气相沉积、物理气相沉积和/或电沉积来沉积至正面子底座接触件上。因此，接触延伸部122可由与正面子底座接触件相同的材料组成，且其特征可在于大体上类似于正面子底座接触件的微结构。
然而，在一些实施方式中，接触延伸部122由与正面子底座接触件相同的材料组成且可通过与正面子底座接触件不同的方法沉积。例如，在一些情况下，正面子底座接触件由通过物理气相沉积(例如，电子束物理气相沉积)沉积的金组成，且接触延伸部由通过电沉积而沉积的金组成。因此，接触延伸部122的特征可在于大体上不同于正面子底座接触件的微结构。例如，接触延伸部122可采用大体上结晶或多晶微结构，且正面子底座接触件可采用大体上非晶微结构。
此外，在一些实施方式中，接触延伸部122由不同于正面子底座接触件的材料组成且可通过不同于正面子底座接触件的手段沉积。例如，在一些情况下，正面子底座接触件由通过物理气相沉积(例如，电子束物理气相沉积)沉积的金组成，且接触延伸部由通过电沉积而沉积的铜组成。因此，接触延伸部122的特征可在于大体上不同于正面子底座接触件的组成分及微结构。
接触延伸部122可操作以抵消基板102的第一侧104及外延层108的第一侧110附近内的本征应力，使得半导体装置阵列100A、100B采用在高于导电粘合材料120的熔化温度的情况下是大体上平面的形式。在一些实施方式中，接触延伸部可由从1微米至30微米厚的金组成。然而，接触延伸部122的可操作性取决于许多因素，诸如其成分、面积、厚度、热膨胀系数及基板102和外延层108附近内的应力，如上所述。此外，由各种处理参数引起的在接触延伸部122内的本征应力可被定制以抵消上述的本征应力。例如，可通过在电沉积期间调节处理参数(例如，溶液pH、杂质、粒度)而引入接触延伸部122的微结构内的应力。
尽管接触延伸部122可操作以在升高的温度下(即，处于或高于导电粘合剂120的熔化温度)抵消本征应力，但该效应必须锁定于较冷温度下。因此，导电粘合材料120可操作以将半导体装置阵列100A、100B固定成在低于其熔化温度的情况下的大体上平面的形式。
在一些实施方式(诸如图1A及图1B中所描绘的实施方式)中，半导体装置阵列100A、100B中的每一个还包括邻接子底座接触件的结构化延伸部124。结构化延伸部124被配置为改善导电粘合材料120与子底座接触件的粘合。在一些情况下，结构化延伸部124也可被配置为经由与接触延伸部122相同的方法抵消上述的本征应力。
接触延伸部122及结构化延伸部124两者连同导电粘合材料120被配置为使得半导体装置阵列100A、100B采用在高于导电粘合材料120的熔化温度的情况下是大体上平面的形式。然后，导电粘合材料120及结构化延伸部124可操作以将半导体装置阵列100A、100B固定成在低于导电粘合材料120的熔化温度的情况下是大体上平面的形式。在一些情况下，结构化延伸部124可包括被配置为增加结构化延伸部124与导电粘合材料120之间的接触面积的钝齿状(crenelated)延伸部132，如图1E中所描绘的。
半导体装置阵列100A、100B还包括在外延层108内的多个隔离部件(未描绘)。多个隔离部件划分半导体装置阵列100A、100B内的各半导体装置。例如，外延层108内的隔离部件可包括介电质材料(诸如氧化铝)。在一些情况下，隔离部件可包括特征在于由离子轰击所引起的损坏的外延层的部分。在一些情况下，外延层内的隔离部件包括外延层的已移除部分。已移除部分限定台面结构，其中每个台面结构划分半导体装置阵列内的半导体装置中的一个。
图2中示出了用于制造图1A中所描绘的半导体装置阵列的示例性方法200。在202，将组件安装至组件保持器(诸如真空吸盘)上。该组件包括具有相对的第一侧104及第二侧106的基板102，以及具有相对的第一侧110及第二侧112的外延层108。外延层108的第一侧110邻接基板102的第一侧104，且基板102的第二侧106邻接组件保持器。如上所述，外延层108可根据本领域的一般技术人员显而易见的方法外延生长于基板102上。
在204，将外延接触件116沉积至外延层108的第二侧112上。如上所述，外延接触件116可经由化学气相沉积、物理气相沉积和/或电沉积来沉积。在一些情况下，外延接触件116可为1000埃至2000埃，但在其他情况下，外延接触件116可为5微米厚或更多。
在206，将接触延伸部122沉积至外延接触件116上。如上所述，接触延伸部122可经由化学气相沉积、物理气相沉积和/或电沉积来沉积。在一些情况下，接触延伸部122可为1微米或高达20微米，或甚至30微米厚。在一些情况下，外延接触件116作为用于接触延伸部122的晶种层。
在208，组件、外延接触件116及接触延伸部122安装至吸盘(例如，真空吸盘)上，以使得外延层108、外延接触件116及接触延伸部122邻近于该吸盘。在一些情况下，使用定位于吸盘与外延层108、外延接触件116及接触延伸部122之间的有机化合物将组件、外延接触件116及接触延伸部122安装至吸盘上。该有机化合物可为被设计为以最小化对前述部件的损坏的蜡、树脂或其他可成型材料。
在210，从组件保持器卸除组件、外延接触件116、接触延伸部122及吸盘。
在212，从基板102的第二侧106移除基板102的部分。基板102的部分可通过标准手段(诸如研磨、研光或抛光)移除。例如，基板102可为700微米厚且可经受研磨、研光或抛光直至其为例如100微米至200微米厚。
在214，将基板接触件114沉积至基板102的第二侧106上。如上所述，基板接触件114可经由化学气相沉积、物理气相沉积和/或电沉积来沉积。在一些情况下，基板接触件114是1000埃至2000埃，但在其他情况下，基板接触件114是5微米或更多。在一些情况下，将结构化延伸部124沉积至基板接触件上。结构化延伸部124可经由化学气相沉积、物理气相沉积和/或电沉积来沉积。在一些情况下，结构化延伸部124是1微米或高达20微米，或甚至30微米厚。在一些情况下，基板接触件114作为用于结构化延伸部124的晶种层。在一些情况下，结构化延伸部124可呈钝齿状或以其他方式结构化以增加结构化延伸部表面面积。
在216，将基板接触件114、组件、外延接触件116、接触延伸部122及吸盘定位至子底座118上，以使得子底座118邻近于基板102的第二侧106及基板接触件114。子底座118通过在基板接触件114与子底座118的部分之间的导电材料120定位。
在218，将子底座118、基板接触件114、组件、外延接触件116、接触延伸部122、吸盘及导电材料120以取决于导电粘合材料120的持续时间加热至处于或高于导电材料120的熔化温度的升高的温度。例如，可将前述部件加热至200℃、300℃或甚至350℃达15分钟、一小时或甚至数小时。在一些情况下，可在惰性气氛(例如，N2、Ar)或还原气氛(例如，95:5 N2:H)中加热前述部件。
在220，将子底座118、基板接触件114、组件、外延接触件116、接触延伸部122、吸盘及导电材料120冷却至低于该升高的温度的温度。
在222，从吸盘卸除子底座118、基板接触件116、组件、外延接触件116、接触延伸部122及导电材料120。
在224，将子底座118、基板接触件114、组件、外延接触件116、接触延伸部122及导电材料120分离(例如，切割)成多个离散半导体装置、半导体装置阵列或多个半导体装置阵列。
图3中示出了用于制造图1B中所描绘的半导体装置阵列的示例性方法300。在302，将组件安装至组件保持器上。该组件包括具有相对的第一侧104及第二侧106的基板102，以及具有相对的第一侧110及第二侧112的外延层108。外延层108的第一侧110邻接基板102的第一侧104，且外延层108的第二侧112邻接组件保持器。如上所述，外延层108可外延生长于基板102上。
在304，将基板接触件114沉积至外延层108的第二侧110上。如上所述，基板接触件114可经由化学气相沉积、物理气相沉积和/或电沉积来沉积。在一些情况下，基板接触件114是1000埃至2000埃，但在其他情况下，基板接触件114是5微米厚或更多。
在306，将接触延伸部122沉积至基板接触件114上。如上所述，接触延伸部122可经由化学气相沉积、物理气相沉积和/或电沉积来沉积。在一些情况下，接触延伸部122是1微米或高达20微米，或甚至30微米厚。在一些情况下，基板接触件114作为用于接触延伸部122的晶种层。
在308，将组件、基板接触件114及接触延伸部122安装至吸盘(例如，真空吸盘)上，以使得基板102、基板接触件114及接触延伸部122邻近于该吸盘。在一些情况下，组件、基板接触件114及接触延伸部122使用定位于吸盘与基板102、基板接触件114及接触延伸部122之间的有机化合物安装至吸盘上。该有机化合物可被设计为以最小化对前述部件的损坏的蜡、树脂或其他可成型材料。
在310，从组件保持器卸除组件、基板接触件114、接触延伸部122及吸盘。
在312，将外延接触件116沉积至外延层108的第二侧112上。如上所述，外延接触件116可经由化学气相沉积、物理气相沉积和/或电沉积来沉积。在一些情况下，外延接触件116是1000埃至2000埃，但在其他情况下，外延接触件116是5微米或更多。在一些情况下，结构化延伸部124沉积至外延接触件116上。结构化延伸部124可经由化学气相沉积、物理气相沉积和/或电沉积来沉积。在一些情况下，结构化延伸部124是1微米或高达20微米，或甚至30微米厚。在一些情况下，外延接触件116作为用于结构化延伸部124的晶种层。在一些情况下，结构化延伸部124可为钝齿状或以其他方式结构化以增加结构化延伸部表面面积。
在314，将外延接触件116、组件、基板接触件114、接触延伸部122及吸盘定位至子底座118上，以使得子底座118邻近于外延层108的第二侧112及外延接触件116。子底座118通过外延接触件116及子底座118的部分之间的导电材料120定位。
在316，将子底座118、外延接触件116、组件、基板接触件114、接触延伸部122、吸盘及导电材料120在取决于导电粘合材料120的持续时间内加热至处于或高于导电材料120的熔化温度的升高的温度。例如，可将前述部件加热至200℃、300℃或甚至350℃达15分钟、一小时或甚至数小时。在一些情况下，可在惰性气氛(例如，N2、Ar)或还原气氛(例如，95:5 N2:H)中加热前述部件。
在318，将子底座、外延接触件116、组件、基板接触件114、接触延伸部122、吸盘及导电材料120冷却至低于该升高的温度的温度。
在320，从吸盘卸除子底座118、外延接触件116、组件、基板接触件114、接触延伸部122及导电材料120。
在322，将子底座118、外延接触件116、组件、基板接触件114、接触延伸部122及导电材料120分离(例如，切割)成多个离散半导体装置、半导体装置阵列或多个半导体装置阵列。
可对前文实施方式进行其他修改。例如，前文示例性程序可包括额外的步骤，诸如施加、显影及移除光刻胶；热处理(例如，退火)；平面化；以及焊接。另外，上述的半导体装置可包括额外的部件，诸如额外的电连接件、电流和/或光限定孔径等。此外，上文在不同实施方式中描述的特征可在相同实施方式中组合。因此，其他实施方式也落入权利要求书的范围内。

Claims (46)

1.一种半导体装置，包括：
基板，其具有相对的第一侧及第二侧；
外延层，其具有相对的第一侧及第二侧，所述外延层的所述第一侧邻接所述基板的所述第一侧；
基板接触件，其邻接所述基板的所述第二侧；
外延接触件，其邻接所述外延层的所述第二侧；
子底座，其通过导电材料安装至子底座接触件，所述子底座接触件为所述外延接触件或所述基板接触件；
正面子底座接触件，所述正面子底座接触件为不与所述子底座接触件相关联的所述外延接触件或所述基板接触件；以及
接触延伸部，其邻接所述正面子底座接触件。
2.根据权利要求1所述的半导体装置，还包括邻接所述子底座接触件的结构化延伸部。
3.根据权利要求1所述的半导体装置，其中，所述接触延伸部由与所述正面子底座接触件相同的材料组成，且所述接触延伸部的特征在于大体上类似于所述正面子底座接触件的微结构。
4.根据权利要求1所述的半导体装置，其中，所述接触延伸部由与所述正面子底座接触件相同的材料组成，且所述接触延伸部的特征在于大体上不同于所述正面子底座接触件的微结构。
5.根据权利要求4所述的半导体装置，其中，所述接触延伸部的特征在于大体上结晶或多晶微结构，且所述正面子底座接触件的特征在于大体上非晶微结构。
6.根据权利要求1所述的半导体装置，其中，所述接触延伸部由导电金属组成。
7.根据权利要求6所述的半导体装置，其中，所述导电金属包括选自由以下组成的组中的一个元素：金、铜、银、铝、铂、钯、铑、铟、铱、镓、铋、锑及锡。
8.根据权利要求1所述的半导体装置，其中，所述导电粘合剂包括可熔金属合金或导电复合物。
9.根据权利要求1所述的半导体装置，其中，所述正面子底座接触件由导电金属组成，其中，所述导电金属包括选自以下组成的组中的一个元素：金、铜、银、铝、铂、钯、铑、铟、铱、镓、铋、锑及锡。
10.根据权利要求3所述的半导体装置，其中，所述结构化延伸部包括被配置为增加所述结构化延伸部与所述导电粘合材料之间的接触面积的钝齿状延伸部。
11.根据权利要求1所述的半导体装置，其中，所述接触延伸部具有1微米至30微米的厚度。
12.根据权利要求1所述的半导体装置，其中，所述基板由砷化镓组成且是10微米至200微米厚，所述外延层由铝砷化镓组成且是1微米至20微米厚，所述外延接触件由金组成且是0.1微米至5微米厚，所述基板接触件由金组成且是0.1微米至5微米厚，且所述接触延伸部是1微米至25微米厚。
13.根据权利要求12所述的半导体装置，其中，所述基板是100微米厚，所述外延层是10微米厚，所述外延接触件是0.1微米厚，所述基板接触件是0.1微米厚，且所述接触延伸部是20微米厚。
14.根据权利要求1所述的半导体装置，其中，所述半导体装置是垂直腔表面发射激光器。
15.根据权利要求14所述的半导体装置，其中，所述外延层包括分布式布拉格反射器及有源区域，且所述基板、所述外延层、所述外延接触件、所述基板接触件及所述子底座可操作以产生光。
16.根据权利要求14所述的半导体装置，其中，所述垂直腔表面发射激光器是顶部发射垂直腔表面发射激光器。
17.根据权利要求14所述的半导体装置，其中，所述垂直腔表面发射激光器是底部发射垂直腔表面发射激光器。
18.一种半导体装置阵列，所述阵列包括：
基板，其具有相对的第一侧及第二侧；
外延层，其具有相对的第一侧及第二侧，所述外延层的所述第一侧邻接所述基板的所述第一侧，其中，所述基板的所述第一侧及所述外延层的所述第一侧的特征在于所述基板的所述第一侧及所述外延层的所述第一侧附近内的本征应力；
基板接触件，其邻接所述基板的所述第二侧；
外延接触件，其邻接所述外延层的所述第二侧；
子底座，其通过导电材料安装至子底座接触件，所述子底座接触件为所述外延接触件或所述基板接触件；
所述导电粘合材料的特征在于熔化温度，所述导电粘合材料在低于所述熔化温度时是大体上固态的；
正面子底座接触件，所述正面子底座接触件为不与所述子底座接触件相关联的所述外延接触件或所述基板接触件；
接触延伸部，其邻接所述正面子底座接触件；以及
多个隔离部件，其位于所述外延层内，所述多个隔离部件划分所述半导体装置阵列内的各个半导体装置。
19.根据权利要求18所述的半导体装置阵列，其中，所述接触延伸部可操作以抵消所述基板的所述第一侧及所述外延层的所述第一侧附近内的所述本征应力，使得所述半导体装置阵列采用在高于所述导电粘合材料的所述熔化温度的情况下是大体上平面的形式。
20.根据权利要求19所述的半导体装置阵列，其中，所述导电粘合材料可操作以将所述半导体装置阵列固定成在低于所述导电粘合材料的所述熔化温度的情况下是大体上平面的形式。
21.根据权利要求18所述的半导体装置阵列，还包括邻接所述子底座接触件的结构化延伸部。
22.根据权利要求21所述的半导体装置阵列，其中，所述接触延伸部可操作以抵消所述基板的所述第一侧及所述外延层的所述第一侧附近内的本征应力，使得所述半导体装置阵列采用在高于所述导电粘合材料的所述熔化温度的情况下是大体上平面的形式，且所述导电粘合材料及所述结构化延伸部可操作以将所述半导体装置阵列固定成在低于所述导电粘合材料的所述熔化温度的情况下是大体上平面的形式。
23.根据权利要求22所述的半导体装置阵列，其中，所述结构化延伸部包括被配置为增加所述结构化延伸部与所述导电粘合材料之间的接触面积的钝齿状延伸部。
24.根据权利要求18所述的半导体装置阵列，其中，所述接触延伸部由与所述正面子底座接触件相同的材料组成，且所述接触延伸部的特征在于大体上类似于所述正面子底座接触件的微结构。
25.根据权利要求18所述的半导体装置阵列，其中，所述接触延伸部由与所述正面子底座接触件相同的材料组成，且所述接触延伸部的特征在于大体上不同于所述正面子底座接触件的微结构。
26.根据权利要求25所述的半导体装置阵列，其中，所述接触延伸部的特征在于大体上结晶或多晶微结构且所述正面子底座接触件的特征在于大体上非晶微结构。
27.根据权利要求18所述的半导体装置阵列，其中，所述外延层内的所述隔离部件包括介电质材料。
28.根据权利要求27所述的半导体装置阵列，其中，所述介电质材料是氧化铝。
29.根据权利要求18所述的半导体装置阵列，其中，所述外延层内的所述隔离部件包括特征在于由离子轰击所引起的损坏的所述外延层的部分。
30.根据权利要求18所述的半导体装置阵列，其中，所述外延层内的所述多个隔离部件包括所述外延层的已移除部分，所述已移除部分形成台面结构，其中，每个台面结构划分所述半导体装置阵列内的所述半导体装置中的一个。
31.根据权利要求18所述的半导体装置阵列，其中，所述基板的所述第一侧及所述外延层的所述第一侧附近内的所述本征应力是由于所述基板与所述外延层之间的晶格参数错位和/或所述基板与所述外延层之间的热膨胀系数错位。
32.根据权利要求18所述的半导体装置阵列，其中，所述半导体装置是垂直腔表面发射激光器。
33.根据权利要求18所述的半导体装置阵列，其中，所述垂直腔表面发射激光器是顶部发射垂直腔表面发射激光器。
34.根据权利要求18所述的半导体装置阵列，其中，所述垂直腔表面发射激光器是底部发射垂直腔表面发射激光器。
35.一种制造半导体装置的方法，所述方法包括：
将组件安装至组件保持器上，所述组件包括具有相对的第一侧及第二侧的基板；以及具有相对的第一侧及第二侧的外延层，所述外延层的所述第一侧邻接所述基板的所述第一侧，且所述基板的所述第二侧邻接所述组件保持器；
将外延接触件沉积至所述外延层的所述第二侧上；
将接触延伸部沉积至所述外延接触件上；
将所述组件、所述外延接触件及所述接触延伸部安装至吸盘上，使得所述外延层、所述外延接触件及所述接触延伸部邻近于所述吸盘；
从所述组件保持器卸除所述组件、所述外延接触件、所述接触延伸部及所述吸盘；
从所述基板的所述第二侧移除所述基板的部分；
将基板接触件沉积至所述基板的所述第二侧上；
将所述基板接触件、所述组件、所述外延接触件、所述接触延伸部及所述吸盘定位至子底座上，使得所述子底座邻近于所述基板的所述第二侧及所述基板接触件，所述子底座通过所述基板接触件及所述子底座的部分之间的导电材料定位；
将所述子底座、所述基板接触件、所述组件、所述外延接触件、所述接触延伸部、所述吸盘及所述导电材料加热至处于或高于所述导电材料的熔化温度的升高的温度；
将所述子底座、所述基板接触件、所述组件、所述外延接触件、所述接触延伸部、所述吸盘及所述导电材料冷却至低于所述升高的温度的温度；
从所述吸盘卸除所述子底座、所述基板接触件、所述组件、所述外延接触件、所述接触延伸部及所述导电材料；以及
将所述子底座、所述基板接触件、所述组件、所述外延接触件、所述接触延伸部及所述导电材料切割成多个半导体装置、半导体装置阵列或多个半导体装置阵列。
36.根据权利要求35所述的方法，还包括将结构化延伸部沉积至所述基板接触件上。
37.根据权利要求35所述的方法，其中，将所述组件、所述外延接触件及所述接触延伸部安装至吸盘上包括：将有机化合物沉积于所述吸盘与所述外延层、所述外延接触件及所述接触延伸部之间。
38.根据权利要求35所述的方法，其中，沉积所述接触延伸部包括：通过电沉积、物理气相沉积或化学气相沉积来沉积所述接触延伸部。
39.根据权利要求36所述的方法，其中，沉积所述结构化延伸部包括：通过电沉积、物理气相沉积或化学气相沉积来沉积所述结构化延伸部。
40.根据权利要求35所述的方法，其中，沉积所述外延接触件和/或所述基板接触件包括：通过电沉积、物理气相沉积或化学气相沉积来沉积所述接触件。
41.一种制造半导体装置的方法，所述方法包括：
将组件安装至组件保持器上，所述组件包括具有相对的第一侧及第二侧的基板；以及具有相对的第一侧及第二侧的外延层，所述外延层的所述第一侧邻接所述基板的所述第一侧，且所述外延层的所述第二侧邻接所述组件保持器；
将基板接触件沉积至所述外延层的所述第二侧上；
将接触延伸部沉积至所述基板接触件上；
将所述组件、所述基板接触件及所述接触延伸部安装至吸盘上，使得所述基板、所述基板接触件及所述接触延伸部邻近于所述吸盘；
从所述组件保持器卸除所述组件、所述基板接触件、所述接触延伸部及所述吸盘；
将外延接触件沉积至所述外延层的所述第二侧上；
将所述外延接触件、所述组件、所述基板接触件、所述接触延伸部及所述吸盘定位至子底座上，使得所述子底座邻近于所述外延层的所述第二侧及所述外延接触件，所述子底座通过所述外延接触件及所述子底座的部分之间的导电材料定位；
将所述子底座、所述外延接触件、所述组件、所述基板接触件、所述接触延伸部、所述吸盘及所述导电材料加热至处于或高于所述导电材料的熔化温度的升高的温度；
将所述子底座、所述外延接触件、所述组件、所述基板接触件、所述接触延伸部、所述吸盘及所述导电材料冷却至低于所述升高的温度的温度；
从所述吸盘卸除所述子底座、所述外延接触件、所述组件、所述基板接触件、所述接触延伸部及所述导电材料；以及
将所述子底座、所述外延接触件、所述组件、所述基板接触件、所述接触延伸部及所述导电材料切割成多个半导体装置、半导体装置阵列或多个半导体装置阵列。
42.根据权利要求41所述的方法，还包括：将结构化延伸部沉积至所述外延接触件上。
43.根据权利要求41所述的方法，其中，将所述组件、所述基板接触件及所述接触延伸部安装至吸盘上包括：将有机化合物沉积于所述吸盘与所述基板、所述基板接触件及所述接触延伸部之间。
44.根据权利要求41所述的方法，其中，沉积所述接触延伸部包括：通过电沉积、物理气相沉积或化学气相沉积来沉积所述接触延伸部。
45.根据权利要求42所述的方法，其中，沉积所述结构化延伸部包括：通过电沉积、物理气相沉积或化学气相沉积来沉积所述结构化延伸部。
46.根据权利要求41所述的方法，其中，沉积所述外延接触件和/或所述基板接触件包括：通过电沉积、物理气相沉积或化学气相沉积来沉积所述接触件。
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