TW201931511A - 搬送裝置之教導方法 - Google Patents

搬送裝置之教導方法 Download PDF

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TW201931511A
TW201931511A TW107142627A TW107142627A TW201931511A TW 201931511 A TW201931511 A TW 201931511A TW 107142627 A TW107142627 A TW 107142627A TW 107142627 A TW107142627 A TW 107142627A TW 201931511 A TW201931511 A TW 201931511A
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wafer
substrate
substrate holding
pressure
holding portion
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小林俊之
北原竜
越石和也
佐藤淳哉
須藤駿
千葉俊光
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日商東京威力科創股份有限公司
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Abstract

本發明之課題在於提供一種能夠抑制鉛直方向之教導精度之偏差的搬送裝置之教導方法。
一實施形態之搬送裝置之教導方法，該搬送裝置具有：基板保持部，其具備抽吸基板並吸附保持之抽吸孔；驅動機構，其使上述基板保持部移動；及壓力檢測部，其檢測與上述抽吸孔連通之抽吸通路之壓力；且該搬送裝置之教導方法具有：第1移動步驟，其使上述基板保持部於上述基板之下方移動；第2移動步驟，其一面於已抽吸上述抽吸通路之狀態下檢測上述抽吸通路之壓力，一面使上述基板保持部自上述基板之下方向上方移動；判定步驟，其基於上述抽吸通路之壓力，判定上述基板保持部是否已與上述基板接觸；及記憶步驟，其記憶於判定上述基板保持部已與上述基板接觸時之上述基板保持部之位置作為基準位置。

Description

搬送裝置之教導方法
本發明係關於一種搬送裝置之教導方法。
於製造半導體裝置時，使用具備於複數個模組之間進行基板之搬送之搬送裝置的基板處理系統。於基板處理系統中，搬送裝置向各模組內搬入基板，向配置於各模組內之載置台傳送基板。
於此種基板處理系統中，為了向各模組內高精度地搬送基板，將各模組內之載置基板之位置等搬送所需之資訊教導給搬送裝置(例如，參照專利文獻1)。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2002-313872號公報
[發明所欲解決之問題]
然而，針對用於將基板載置於載置台之中心位置之水平方向之教導，多利用控制裝置自動進行教導。另一方面，關於鉛直方向之教導，作業人員利用目視進行位置檢測，利用人工作業將位置資訊輸入至搬送裝置中。因此，根據作業人員之熟練度而於鉛直方向之教導精度中產生偏差。
對此，於本發明之一態樣中，目的在於提供一種能夠抑制鉛直方向之教導精度之偏差的搬送裝置之教導方法。
[解決問題之技術手段]
為了達成上述目的，本發明之一態樣係一種搬送裝置之教導方法，該搬送裝置具有：基板保持部，其具備抽吸基板並吸附保持之抽吸孔；驅動機構，其使上述基板保持部移動；及壓力檢測部，其檢測與上述抽吸孔連通之抽吸通路之壓力；且該搬送裝置之教導方法具有：第1移動步驟，其使上述基板保持部於上述基板之下方移動；第2移動步驟，其一面於已抽吸上述抽吸通路之狀態下檢測上述抽吸通路之壓力，一面使上述基板保持部自上述基板之下方向上方移動；判定步驟，其基於上述抽吸通路之壓力，判定上述基板保持部是否已與上述基板接觸；及記憶步驟，其記憶於判定上述基板保持部已與上述基板接觸時之上述基板保持部之位置作為基準位置。
[發明之效果]
根據發明之搬送裝置之教導方法，能夠抑制鉛直方向之教導精度之偏差。
以下，針對實施方式參照圖式進行說明。再者，於本說明書及圖式中，對於實質上相同之構成標註同一元件符號，藉此省略重複之說明。
〔基板處理系統〕
作為一實施形態之教導方法適用之基板處理系統之一例，針對能夠以單片對半導體晶圓(以下稱作「晶圓W」)實施成膜處理等各種處理之基板處理系統進行說明。
圖1係表示一實施形態之基板處理系統之概略構成之圖。圖2係表示負載埠之剖面之一例之圖。圖3係表示對準器之剖面之一例之圖。圖4係表示加載互鎖真空室模組之剖面之一例之圖。圖5係表示控制裝置之硬體構成之一例之圖。
如圖1所示，基板處理系統1具備轉移模組10、4個處理模組20、裝載模組30、2個加載互鎖真空室模組40、及控制裝置100。
轉移模組10於俯視下具有大致六角形。轉移模組10包括真空室，具有配置於內部之搬送裝置11。搬送裝置11由在能夠接近處理模組20及加載互鎖真空室模組40之位置可屈伸、升降及回轉之多關節臂形成。搬送裝置11具有能夠互相朝相反方向獨立屈伸之2個拾取器12，能夠一次搬送2塊晶圓W。再者，搬送裝置11只要能夠於處理模組20與加載互鎖真空室模組40之間搬送晶圓W即可，並不限定於圖1所示之構成。
處理模組20呈放射狀地配置於轉移模組10之周圍並與轉移模組10連接。處理模組20包括處理室，於內部具有載置晶圓W之圓柱狀之平台21。於處理模組20中，對載置於平台21之晶圓W實施成膜處理等特定之處理。轉移模組10與處理模組20由可開閉之閘閥22分隔。
裝載模組30與轉移模組10對向配置。裝載模組30為長方體狀，且係保持為大氣壓氛圍之大氣搬送室。於裝載模組30內，配置有搬送裝置31。搬送裝置31可滑動移動地支持於以使裝載模組30內之中心部沿著長度方向延伸之方式設置之導軌32上。導軌32中例如內置有具有編碼器之線性馬達，藉由驅動線性馬達，搬送裝置31沿著導軌32移動。
搬送裝置31具有上下配置為2段之2個多關節臂33。於各多關節臂33之前端安裝有形成為2股狀之作為基板保持部之拾取器34。於各拾取器34上，保持有晶圓W。各多關節臂33可自中心朝半徑方向屈伸及升降。又，各多關節臂33之屈伸動作能夠個別地控制。多關節臂33之各旋轉軸分別相對於基台35同軸狀地、可旋轉地連接，例如能夠朝相對於基台35之回轉方向一體旋轉。導軌32及多關節臂33作為使拾取器34移動之驅動機構發揮功能。搬送裝置31於後述之加載互鎖真空室模組40、搬送容器51、及對準器60之間搬送晶圓W。再者，搬送裝置31只要能夠於加載互鎖真空室模組40、搬送容器51、及對準器60之間搬送晶圓W即可，並不限定於圖1所示之構成。
於沿著裝載模組30之長度方向之一側面，連接有2個加載互鎖真空室模組40。另一方面，於沿著裝載模組30之長度方向之另一側面，設有1個或複數個用於導入晶圓W之搬入口36。於圖示之例中，設有3個搬入口36。於各搬入口36中，設有可開閉之開閉門37。又，對應各搬入口36而分別設有負載埠50。於負載埠50中，載置有收納且搬送晶圓W之搬送容器51。搬送容器51可為具有特定之間隔地多段載置並收納複數個(例如25塊)晶圓W之FOUP(Front-Opening Unified Pod，前開式晶圓盒)。圖2中示出3個負載埠50中之1個，於各負載埠50中為了開閉搬送容器51之開閉蓋52而設有可升降及可進退之開閉門37之驅動機構38。
於沿著裝載模組30之短邊方向之一側面，連接有對準器60。對準器60進行晶圓W之位置對準。如圖3所示，對準器60具有由驅動馬達61旋轉之旋轉平台62，且於旋轉平台62之上載置有晶圓W之狀態下旋轉。旋轉平台62具有較晶圓W之直徑小之直徑。於旋轉平台62之外周，設有用於檢測晶圓W之周緣部之光學感測器63。對準器60利用光學感測器63，檢測晶圓W之中心位置及凹口相對於晶圓W之中心之方向，於加載互鎖真空室模組40內，以晶圓W之中心位置及凹口之方向成為特定位置及特定方向之方式調整晶圓W之搬送位置。
加載互鎖真空室模組40配置於轉移模組10與裝載模組30之間。加載互鎖真空室模組40包括可將內部切換為真空、大氣壓之內壓可變室，於內部具有載置晶圓W之圓柱狀之平台41。平台41具有較晶圓W之直徑小之直徑。加載互鎖真空室模組40於將晶圓W自裝載模組30搬入轉移模組10時，將內部維持為大氣壓並自裝載模組30接收晶圓W之後，使內部減壓而將晶圓W搬入轉移模組10。又，於將晶圓W自轉移模組10搬出至裝載模組30時，將內部維持為真空並自轉移模組10接收晶圓W之後，使內部升壓至大氣壓而將晶圓W搬入至裝載模組30。加載互鎖真空室模組40與轉移模組10由可開閉之閘閥42分隔。又，加載互鎖真空室模組40與裝載模組30由可開閉之閘閥43分隔。
控制裝置100控制基板處理系統1之各構成要素之動作。如圖5所示，控制裝置100係具有分別以匯流排B相互連接之驅動裝置101、輔助記憶裝置102、記憶體裝置103、CPU(Central Processing Unit，中央處理單元)104、及介面裝置105等之電腦。實現以控制裝置100之處理之程式由CD-ROM(Compact Disc-Read Only Memory，唯讀光碟記憶體)等記錄媒體106提供。若記憶有程式之記錄媒體106設置於驅動裝置101，則程式自記錄媒體106經由驅動裝置101安裝於輔助記憶裝置102。但是，程式之安裝不一定需要由記錄媒體106進行，亦可以經由網路自其他電腦下載之方式進行。輔助記憶裝置102儲存所安裝之程式、製程配方等所需之資料。記憶體裝置103於有程式之啟動指示之情形時，自輔助記憶裝置102讀出程式並儲存。CPU104按照儲存於記憶體裝置103之程式實行基板處理系統1之功能。介面裝置105作為用於連接網路之介面使用。
〔拾取器〕
接著，針對搬送裝置31之拾取器34進行說明。圖6係表示拾取器34之概略構成之一例之圖。
拾取器34具有基部34a、2個前端部34b、4個爪部34c、及排氣通路34d。基部34a安裝於多關節臂33。各前端部34b朝著拾取器34之前進方向自基部34a呈大致圓弧狀延伸而形成。各爪部34c朝著由基部34a及前端部34b包圍之區域(以下稱作「晶圓保持區域」)之中心部突出而形成。4個爪部34c沿著晶圓保持區域之圓周方向互相具有間隔地配置。於各爪部34c之上部形成有抽吸孔34e，晶圓W之下表面之周緣部以蓋住抽吸孔34e之方式吸附保持於爪部34c上。排氣通路34d形成於基部34a及前端部34b，構成抽吸通路。排氣通路34d之一端連接於各爪部34c之抽吸孔34e，另一端連通於構成與拾取器34連接之抽吸通路之排氣管34f內。
於排氣管34f介設有作為壓力檢測部之壓力感測器34g及閥34h。壓力感測器34g檢測排氣管34f內之壓力(以下亦稱作「吸附壓力」)，將對應於所檢測到之壓力之信號輸出至控制裝置100。於排氣管34f之閥34h之下游側，連接有排氣裝置34i。排氣裝置34i包括調節器、真空泵等，一面調整壓力一面抽吸排氣通路34d及排氣管34f內。閥34h係以如下方式受到開閉控制，即，於實行後述之搬送裝置31之教導時、或自搬送裝置31即將自一模組接收晶圓W之前至剛將晶圓W載置於另一模組之後的期間打開，於除此以外之期間閉合。由此，搬送裝置31之教導時、及自搬送裝置31即將保持晶圓W之前至剛放開晶圓W之後，自抽吸孔34e進行抽吸。
〔教導方法〕
針對一實施形態之搬送裝置31之教導方法進行說明。圖7係表示一實施形態之搬送裝置31之教導方法之流程圖。
以下，列舉將載置於對準器60內之旋轉平台62之晶圓W之下表面與搬送裝置31之拾取器34之上表面接觸之位置教導(教示)給搬送裝置之方法為例進行說明。但是，關於載置於加載互鎖真空室模組40內之平台41之晶圓W之下表面或搬送容器51內收納之晶圓W之下表面、與搬送裝置31之拾取器34之上表面接觸之位置，亦同樣能夠進行教導。再者，於以下之說明中，基板處理系統1之各構成要素之動作由控制裝置100控制。
於步驟S1中，於旋轉平台62上載置用於教導之晶圓W(載置步驟)。作為用於教導之晶圓W，例如可使用製品用晶圓、試驗品用晶圓、監控用晶圓、搬送檢查晶圓、虛設晶圓等各種晶圓。
於步驟S2中，使搬送裝置31之拾取器34移動至作為教導開始位置之晶圓W之下方(第1移動步驟)。由此，搬送裝置31之多關節臂33成為伸展之狀態。
於步驟S3中，藉由打開介設於排氣管34f之閥34h，開始排氣通路34d及排氣管34f內之抽吸。但是，開始排氣通路34d及排氣管34f內之抽吸之時機並不限定於此，例如，可為使拾取器34移動至教導開始位置之前，亦可為使拾取器34移動至教導開始位置之中途。
於步驟S4中，於已抽吸排氣通路34d及排氣管34f內之狀態下，使拾取器34向上方移動特定距離(例如，0.1 mm)後停止(第2移動步驟)。由此，拾取器34之上表面與晶圓W之下表面之距離變短。
於步驟S5中，控制裝置100判定於拾取器34上是否吸附有晶圓W(判定步驟)。例如，控制裝置100基於由壓力感測器34g所檢測到之吸附壓力是否於特定時間內達到特定之閾值以下，而判定於拾取器34上是否吸附有晶圓W。具體而言，於該吸附壓力於特定時間內達到特定之閾值以下之情形時，控制裝置100判定於拾取器34上吸附有晶圓W。另一方面，於該吸附壓力未於特定時間內達到特定之閾值以下之情形時，控制裝置100判定於拾取器34上未吸附晶圓W。特定時間例如可設為直至由壓力感測器34g所檢測到之吸附壓力大致固定所需之時間。又，例如控制裝置100亦可基於使拾取器34向上方移動特定距離後之吸附壓力相對於拾取器34位於教導開始位置時之吸附壓力之變化量是否為特定之閾值以上，而判定於拾取器34上是否吸附有晶圓W。具體而言，於該吸附壓力之變化量為特定之閾值以上之情形時，控制裝置100判定於拾取器34上吸附有晶圓W。另一方面，於該吸附壓力之變化量未達特定之閾值之情形時，控制裝置100判定於拾取器34上未吸附晶圓W。又，例如於搬送裝置31具有可基於吸附壓力判定於拾取器34上是否吸附有晶圓W之控制器之情形時，控制裝置100可基於該控制器之判定結果，判定於拾取器34上是否吸附有晶圓W。具體而言，於該控制器判定於拾取器34上吸附有晶圓W之情形時，控制裝置100接收該控制器之判定結果而判定於拾取器34上吸附有晶圓W。另一方面，於該控制器判定於拾取器34上未吸附晶圓W之情形時，控制裝置100接收該控制器之判定結果而判定於拾取器34上未吸附晶圓W。
步驟S5中於判定於拾取器34上未吸附晶圓W之情形時，控制裝置100判定晶圓W之下表面未與拾取器34之上表面接觸，將處理返回至步驟S4。即，控制裝置100間歇地使拾取器34向上方移動直至於拾取器34上吸附有晶圓W。另一方面，於步驟S5中判定於拾取器34上吸附有晶圓W之情形時，控制裝置100判定晶圓W之下表面與拾取器34之上表面接觸，使處理進入步驟S6。
於步驟S6中，將於步驟S5中判定晶圓W之下表面與拾取器34之上表面接觸時之拾取器34之位置(以下亦稱作「當前位置」)作為拾取器34之基準位置記憶於輔助記憶裝置102等中(記憶步驟)，結束處理。
利用以上之步驟S1～S6，能夠教導拾取器34與晶圓W接觸之位置。
如以上所說明般，於一實施形態之搬送裝置31之教導方法中，基於使抽吸晶圓W並吸附保持之拾取器34自晶圓W之下方朝向上方移動時之吸附壓力教導拾取器34與晶圓W接觸之位置。由此，由於作業人員無需利用目視進行位置檢測，故而能夠抑制由作業人員之熟練度所引起之搬送裝置31之鉛直方向之教導精度之偏差。又，能夠減少搬送裝置31之教導所需之步驟數。又，由於不需要教導專用之治具，對作業人員之技術教育較為容易，故而能夠減少教導所需之費用。
又，於一實施形態中，於多關節臂33伸展之狀態下，檢測拾取器34之上表面與晶圓W之下表面接觸之鉛直方向之位置。由此，能夠抑制因於多關節臂33伸展時由於拾取器34之自重而可能產生之拾取器34之撓曲而令教導精度降低。
接著，針對使用前述之搬送裝置31之教導方法時之拾取器34之高度與吸附壓力之關係進行說明。圖8係表示拾取器34之高度與吸附壓力之關係之圖，縱軸表示由壓力感測器34g所檢測到之吸附壓力，橫軸表示拾取器34之高度方向之位置(以下亦稱作「Z軸高度」)。圖9係表示拾取器34與晶圓W之位置關係之圖，圖9(a)～(c)分別表示圖8中之Z軸高度為Z1～Z3時之拾取器34與晶圓W之位置關係。
於拾取器34自晶圓W離開之位置(參照圖9(a))上，由於拾取器34之抽吸孔34e開放，故而如圖8所示般吸附壓力增高。
於拾取器34接近於晶圓W之位置(參照圖9(b))上，如圖8所示般，隨著拾取器34之上表面靠近晶圓W之下表面，吸附壓力降低。
於拾取器34之上表面與晶圓W之下表面接觸之位置(參照圖9(c))上，由於拾取器34之抽吸孔34e閉鎖，故而如圖8所示般吸附壓力降低。
以此方式，於拾取器34之上表面與晶圓W之下表面接觸之前後，由壓力感測器34g所檢測到之吸附壓力發生變化。
於一實施形態中，如圖8所示，將比拾取器34之上表面與晶圓W之下表面接觸之位置上之吸附壓力大，且比拾取器34自晶圓W離開之位置上之吸附壓力小之壓力設定為閾值。並且，於由壓力感測器34g所檢測到之吸附壓力為閾值以下之情形時，控制裝置100判定拾取器34之上表面與晶圓W之下表面接觸，將當前位置作為基準位置記憶於輔助記憶裝置102等中。
〔晶圓之搬送方法〕
針對晶圓W之搬送方法，列舉利用使用前述之教導方法教導之搬送裝置31，將晶圓W搬入對準器60內，進行晶圓W之搬送位置之調整，將晶圓W自對準器60內搬出之情形為例進行說明。圖10係說明拾取器34與旋轉平台62之間之晶圓W之傳送之動作的圖。圖10(a)表示將拾取器34所保持之晶圓W載置於旋轉平台62時之動作。圖10(b)表示拾取器34保持載置於旋轉平台62之晶圓W時之動作。
首先，將收納晶圓W之搬送容器51載置於負載埠50。繼而，使搬送裝置31之拾取器34進入搬送容器51內而提昇晶圓W並保持後，自搬送容器51內退出。
繼而，如圖10(a)之箭頭A1所示，使保持晶圓W之拾取器34自與利用前述之教導方法所記憶之基準位置相比位於上方之特定距離Za(例如2～3 mm)之第1之高度進入對準器60內之旋轉平台62之上方。
繼而，如圖10(a)之箭頭A2所示，使拾取器34下降至與基準位置相比位於下方之特定距離Zb(例如2～3 mm)之第2高度。此時，於基準位置上晶圓W之下表面與旋轉平台62之上表面接觸，藉由使拾取器34下降至第2高度，將晶圓W載置於旋轉平台62。
繼而，如圖10(a)之箭頭A3所示，使拾取器34自對準器60內退出。又，於使拾取器34自對準器60內退出後，利用對準器60進行晶圓W相對於加載互鎖真空室模組40之搬送位置之調整。
繼而，如圖10(b)之箭頭B1所示，使未保持晶圓W之拾取器34自與基準位置相比位於下方之特定距離Zb(例如2～3 mm)之第2高度進入對準器60內之旋轉平台62之下方。
繼而，如圖10(b)之箭頭B2所示，使拾取器34上升至與基準位置相比位於上方之特定距離Za之第1高度。此時，於基準位置上晶圓W之下表面與拾取器34之上表面接觸，藉由使拾取器34上升至第1高度，將晶圓W保持於拾取器34。
繼而，如圖10(b)之箭頭B3所示，使保持晶圓W之拾取器34自對準器60內退出。
藉由以上，能夠利用搬送裝置31將晶圓W搬入對準器60內，進行晶圓W之搬送位置之調整，將晶圓W自對準器60內搬出。
以上針對實施方式進行了說明，但上述內容不限定發明之內容，於本發明之範圍內可進行各種變化及改良。
於上述實施形態中，列舉基板為半導體晶圓之情形為例進行了說明，但本發明並不限定於此。例如，基板亦可為玻璃基板、LCD(Liquid Crystal Display，液晶顯示裝置)基板等。
1‧‧‧基板處理系統
10‧‧‧轉移模組
11‧‧‧搬送裝置
12‧‧‧拾取器
20‧‧‧處理模組
21‧‧‧平台
22‧‧‧閘閥
30‧‧‧裝載模組
31‧‧‧搬送裝置
32‧‧‧導軌
33‧‧‧多關節臂
34‧‧‧拾取器
34a‧‧‧基部
34b‧‧‧前端部
34c‧‧‧爪部
34d‧‧‧排氣通路
34e‧‧‧抽吸孔
34f‧‧‧排氣管
34g‧‧‧壓力感測器
34h‧‧‧閥
34i‧‧‧排氣裝置
35‧‧‧基台
36‧‧‧搬入口
37‧‧‧開閉門
38‧‧‧驅動機構
40‧‧‧加載互鎖真空室模組
41‧‧‧平台
42‧‧‧閘閥
43‧‧‧閘閥
50‧‧‧負載埠
51‧‧‧搬送容器
52‧‧‧開閉蓋
60‧‧‧對準器
61‧‧‧驅動馬達
62‧‧‧旋轉平台
63‧‧‧光學感測器
100‧‧‧控制裝置
101‧‧‧驅動裝置
102‧‧‧輔助記憶裝置
103‧‧‧記憶體裝置
104‧‧‧CPU
105‧‧‧介面裝置
106‧‧‧記錄媒體
A1‧‧‧箭頭
A2‧‧‧箭頭
A3‧‧‧箭頭
B‧‧‧匯流排
B1‧‧‧箭頭
B2‧‧‧箭頭
B3‧‧‧箭頭
W‧‧‧晶圓
Za‧‧‧特定距離
Zb‧‧‧特定距離
圖1係表示一實施形態之基板處理系統之概略構成之圖。
圖2係表示負載埠之剖面之一例之圖。
圖3係表示對準器之剖面之一例之圖。
圖4係表示加載互鎖真空室模組之剖面之一例之圖。
圖5係表示控制裝置之硬體構成之一例之圖。
圖6係表示拾取器之概略構成之一例之圖。
圖7係表示一實施形態之搬送裝置之教導方法之流程圖。
圖8係表示拾取器之高度與吸附壓力之關係之圖。
圖9(a)～(c)係表示拾取器與晶圓之位置關係之圖。
圖10(a)、(b)係說明拾取器與旋轉平台之間之晶圓之傳送之動作的圖。

Claims (8)

  1. 一種搬送裝置之教導方法，該搬送裝置具有： 基板保持部，其具備抽吸基板並吸附保持之抽吸孔；驅動機構，其使上述基板保持部移動；及壓力檢測部，其檢測與上述抽吸孔連通之抽吸通路之壓力； 且該搬送裝置之教導方法具有： 第1移動步驟，其使上述基板保持部於上述基板之下方移動； 第2移動步驟，其一面於已抽吸上述抽吸通路之狀態下檢測上述抽吸通路之壓力，一面使上述基板保持部自上述基板之下方向上方移動； 判定步驟，其基於上述抽吸通路之壓力，判定上述基板保持部是否已與上述基板接觸；及 記憶步驟，其記憶於判定上述基板保持部已與上述基板接觸時之上述基板保持部之位置作為基準位置。
  2. 如請求項1之搬送裝置之教導方法，其中 上述第2移動步驟使上述基板保持部以每特定距離間歇地移動。
  3. 如請求項2之搬送裝置之教導方法，其中 上述判定步驟基於上述基板保持部停止時之上述抽吸通路之壓力，判定上述基板保持部是否已與上述基板接觸。
  4. 如請求項1至3中任一項之搬送裝置之教導方法，其中 上述判定步驟於上述抽吸通路之壓力為閾值以下之情形時，判定上述基板保持部已與上述基板接觸。
  5. 如請求項1至3中任一項之搬送裝置之教導方法，其中 上述驅動機構包括多關節臂。
  6. 如請求項4之搬送裝置之教導方法，其中 上述驅動機構包括多關節臂。
  7. 如請求項5之搬送裝置之教導方法，其中 上述第2移動步驟係於上述多關節臂伸展之狀態下執行。
  8. 如請求項6之搬送裝置之教導方法，其中 上述第2移動步驟係於上述多關節臂伸展之狀態下執行。
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