TW201926764A - 用以於一真空腔室中成像之設備、用於一基板之真空處理的系統、及用以在一真空腔室中使至少一物體成像之方法 - Google Patents

用以於一真空腔室中成像之設備、用於一基板之真空處理的系統、及用以在一真空腔室中使至少一物體成像之方法 Download PDF

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Publication number
TW201926764A
TW201926764A TW107133121A TW107133121A TW201926764A TW 201926764 A TW201926764 A TW 201926764A TW 107133121 A TW107133121 A TW 107133121A TW 107133121 A TW107133121 A TW 107133121A TW 201926764 A TW201926764 A TW 201926764A
Authority
TW
Taiwan
Prior art keywords
vacuum chamber
substrate
imaging
light
mask
Prior art date
Application number
TW107133121A
Other languages
English (en)
Chinese (zh)
Inventor
派翠西亞安 舒爾茨
保羅 沃斯
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201926764A publication Critical patent/TW201926764A/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Studio Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
TW107133121A 2017-09-21 2018-09-20 用以於一真空腔室中成像之設備、用於一基板之真空處理的系統、及用以在一真空腔室中使至少一物體成像之方法 TW201926764A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??PCT/US2017/052645 2017-09-21
PCT/US2017/052645 WO2019059909A1 (en) 2017-09-21 2017-09-21 VACUUM CHAMBER IMAGING APPARATUS, SUBSTRATE VACUUM PROCESSING SYSTEM, AND IMAGING METHOD OF AT LEAST ONE OBJECT IN VACUUM CHAMBER

Publications (1)

Publication Number Publication Date
TW201926764A true TW201926764A (zh) 2019-07-01

Family

ID=65810562

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107133121A TW201926764A (zh) 2017-09-21 2018-09-20 用以於一真空腔室中成像之設備、用於一基板之真空處理的系統、及用以在一真空腔室中使至少一物體成像之方法

Country Status (5)

Country Link
JP (1) JP2020505794A (ja)
KR (1) KR102140688B1 (ja)
CN (1) CN109891618B (ja)
TW (1) TW201926764A (ja)
WO (1) WO2019059909A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110093584B (zh) * 2019-06-06 2021-03-02 京东方科技集团股份有限公司 一种掩膜版、掩膜系统及蒸镀掩膜方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298939A (en) * 1991-11-04 1994-03-29 Swanson Paul A Method and apparatus for transfer of a reticle pattern onto a substrate by scanning
JP4510609B2 (ja) * 2004-12-21 2010-07-28 株式会社アルバック 基板とマスクのアライメント方法および有機薄膜蒸着方法ならびにアライメント装置
JP2008293798A (ja) * 2007-05-24 2008-12-04 Toyota Industries Corp 有機el素子の製造方法
NL2004365A (en) * 2009-04-10 2010-10-12 Asml Holding Nv Method and system for increasing alignment target contrast.
JP6053110B2 (ja) * 2011-07-07 2016-12-27 株式会社アルバック 真空蒸着装置
KR101851384B1 (ko) * 2011-07-18 2018-04-24 삼성디스플레이 주식회사 유기 발광 디스플레이 패널용 제조 장치와, 이를 이용한 유기 발광 디스플레이 패널의 제조 방법
US10679883B2 (en) * 2012-04-19 2020-06-09 Intevac, Inc. Wafer plate and mask arrangement for substrate fabrication
KR102206593B1 (ko) * 2013-12-02 2021-02-02 주식회사 선익시스템 기판의 얼라인 장치 및 방법
JP6093091B2 (ja) * 2014-09-26 2017-03-08 株式会社アルバック Xyステージ、アライメント装置、蒸着装置

Also Published As

Publication number Publication date
KR20190034493A (ko) 2019-04-02
CN109891618A (zh) 2019-06-14
CN109891618B (zh) 2021-02-26
WO2019059909A1 (en) 2019-03-28
KR102140688B1 (ko) 2020-08-03
JP2020505794A (ja) 2020-02-20

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