TW201926457A - Flat panel display manufacturing device - Google Patents
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- TW201926457A TW201926457A TW106144594A TW106144594A TW201926457A TW 201926457 A TW201926457 A TW 201926457A TW 106144594 A TW106144594 A TW 106144594A TW 106144594 A TW106144594 A TW 106144594A TW 201926457 A TW201926457 A TW 201926457A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract
Description
本發明係關於在真空下對玻璃基板施予預定處理的平面面板顯示器製造裝置,以及具有消除玻璃基板上帶電電荷的靜電消除功能的裝置。 The present invention relates to a flat panel display manufacturing apparatus for applying a predetermined treatment to a glass substrate under vacuum, and an apparatus having an electrostatic elimination function for eliminating charged charges on a glass substrate.
液晶顯示器或電漿顯示器(plasma display)、有機EL顯示器等的平面面板顯示器的製造步驟係在真空下實施。 The manufacturing steps of a flat panel display such as a liquid crystal display, a plasma display, or an organic EL display are performed under vacuum.
就製造步驟的具體例而言,可舉出有導入雜質用的離子置入步驟、或電路圖案構圖用的曝光步驟、薄膜成膜用的成膜步驟等。 Specific examples of the production steps include an ion implantation step for introducing impurities, an exposure step for pattern patterning, a film formation step for film formation, and the like.
當實施各步驟時,要進行:使用搬運機器人等將玻璃基板搬入搬出處理艙室、或使用基板支持機構的玻璃基板的處理位置的定位。 When each step is performed, positioning of the processing position of the glass substrate using the transfer robot or the like by carrying the glass substrate into the carry-out processing chamber or using the substrate supporting mechanism is performed.
在要進行玻璃基板的搬運或定位時,因受在物體間的摩擦及/或剝離,而在玻璃基板上會有帶電電荷。若保持著帶電電荷的狀態,會產生玻璃基板的黏附或靜電放電。而且,由於被帶電玻璃基板吸著的粒子為主因,有造成基板處理不良的疑慮。 When the glass substrate is to be transported or positioned, there is a charged charge on the glass substrate due to friction and/or peeling between the objects. If the state of charged charge is maintained, adhesion or electrostatic discharge of the glass substrate occurs. Further, the particles adsorbed by the charged glass substrate are mainly caused by the problem of poor substrate processing.
因此,以往都利用電漿來進行玻璃基板的電荷的靜電消除。 Therefore, conventionally, plasma is used to perform electrostatic elimination of charges on a glass substrate.
具體而言,有專利文獻1或專利文獻2所述之採用離子化器(ionizer)的靜電消除方法。在該靜電消除方法中,係在真空排氣後的艙室內填充氮氣或氬氣等的惰性氣體。然後,對該氣體照射紫外線、或在惰性氣體環境內點亮電漿,藉此電離惰性氣體使之電漿化。最後,以使玻璃基板暴露在經產生的惰性氣體的電漿之方式,來對玻璃基板進行帶電之電荷的靜電消除。 Specifically, there is a method of static elimination using an ionizer described in Patent Document 1 or Patent Document 2. In the static elimination method, an inert gas such as nitrogen or argon is filled in a chamber after vacuum evacuation. Then, the gas is irradiated with ultraviolet rays or the plasma is lit in an inert gas atmosphere, thereby ionizing the inert gas to plasma. Finally, static elimination of the charged charge of the glass substrate is performed in such a manner that the glass substrate is exposed to a plasma of the generated inert gas.
專利文獻1:日本特開2004-241420 Patent Document 1: Japanese Special Open 2004-241420
專利文獻2:日本特開平9-324260 Patent Document 2: Japanese Patent Laid-Open No. 9-324260
在專利文獻1或專利文獻2所述的方法中,在靜電消除時必須預先在艙室內填充惰性氣體,所以較不適合在高真空下的使用。 In the method described in Patent Document 1 or Patent Document 2, it is necessary to previously fill the chamber with an inert gas at the time of static elimination, so that it is less suitable for use under high vacuum.
本發明中提供一種平面面板顯示器製造裝置,該裝置係具有適合在高真空下之玻璃基板的靜電消除的靜電消除裝置。 The present invention provides a flat panel display manufacturing apparatus which has a static electricity eliminating device suitable for static elimination of a glass substrate under high vacuum.
本發明之平面面板顯示器製造裝置,係具 備:處理艙室,係對玻璃基板施予加工處理;以及搬運路徑,係成為用以將玻璃基板搬入搬出前述處理艙室的搬入搬出路徑;前述處理艙室、以及前述搬運路徑係處於真空環境下,於構成前述搬運路徑的真空容器的外壁面,連接有朝向前述真空容器的內側釋放前述玻璃基板之靜電消除用的電子的靜電消除裝置。 Flat panel display manufacturing device of the invention, the device The processing chamber is configured to process the glass substrate; and the transport path is a loading/unloading path for loading and unloading the glass substrate into and out of the processing chamber; and the processing chamber and the transport path are in a vacuum environment. The outer wall surface of the vacuum container constituting the conveyance path is connected to a static electricity eliminating device that discharges electrons for static elimination of the glass substrate toward the inner side of the vacuum container.
將帶負電的玻璃基板亦作為靜電消除對象時,最好是:前述靜電消除裝置係具備:藉由被導入氣體的電離,在艙室內產生電漿的電漿艙室;而從該艙室內釋放前述玻璃基板之靜電消除用的電漿者。 When the negatively charged glass substrate is also used as a static elimination target, it is preferable that the static electricity eliminating device includes a plasma chamber in which plasma is generated in the chamber by ionization of the introduced gas; and the foregoing is released from the chamber. A plasma for static elimination of a glass substrate.
為了改善被導入至電漿艙室內之氣體的利用效率,最好是:前述靜電消除裝置係具備:用以從前述電漿艙室輸送電漿至前述搬運路徑的電漿輸送路徑;在與電漿的輸送方向成垂直的裁斷剖面中,前述電漿輸送路徑的裁斷剖面係較前述電漿艙室的裁斷剖面還小。 In order to improve the utilization efficiency of the gas introduced into the plasma chamber, it is preferable that the static electricity eliminating device includes: a plasma transport path for transporting plasma from the plasma chamber to the transport path; In the cutting section in which the conveying direction is perpendicular, the cutting section of the plasma conveying path is smaller than the cutting section of the plasma chamber.
為了使在電漿艙室內所產生的電漿容易導入至搬運路徑側,最好是:在前述電漿輸送路徑係形成有沿著電漿之輸送方向的 磁場。 In order to facilitate the introduction of the plasma generated in the plasma chamber to the transport path side, it is preferable that the plasma transport path is formed along the transport direction of the plasma. magnetic field.
為了防止在電漿輸送路徑的內壁面之電漿的消失:亦可在前述電漿輸送路徑的外周設置有對輸送路徑內產生尖磁場(cusp magnetic field)的永久磁鐵。 In order to prevent the disappearance of the plasma on the inner wall surface of the plasma transport path: a permanent magnet that generates a cusp magnetic field in the transport path may be provided on the outer circumference of the plasma transport path.
為了平面面板顯示器製造裝置的靜電消除裝置,要保持搬運路徑側為真空的狀態下進行靜電消除裝置的維護,最好是:在前述電漿輸送路徑設置有輸送路徑開閉用的閥體。 In the static electricity eliminating device of the flat panel display manufacturing device, it is preferable to maintain the static electricity eliminating device while keeping the transport path side in a vacuum. Preferably, the valve body for opening and closing the transport path is provided in the plasma transport path.
為了要有效率地對玻璃基板的兩表面供應電漿,最好是:在前述搬運路徑中,進行以從前述玻璃基板之側方的方式通過前述電漿輸送路徑來供應要給前述玻璃基板的電漿。 In order to efficiently supply the plasma to both surfaces of the glass substrate, it is preferable to supply the glass substrate to be supplied to the glass substrate through the plasma transport path from the side of the glass substrate in the transport path. Plasma.
在構成搬運路徑的真空容器的外壁面連接有靜電消除裝置,並基於從靜電消除裝置所供應的電子來進行玻璃基板的靜電消除,所以不須在搬運路徑內填充氣體。由此,能夠形成將搬運路徑內保持為高真空。 A static electricity eliminating device is connected to the outer wall surface of the vacuum container constituting the conveying path, and static electricity is removed from the glass substrate based on the electrons supplied from the static electricity eliminating device. Therefore, it is not necessary to fill the gas in the conveying path. Thereby, it is possible to form a high vacuum in the conveyance path.
1‧‧‧處理艙室 1‧‧‧Processing cabin
2‧‧‧真空預備艙室 2‧‧‧vacuum preparation cabin
3‧‧‧中間艙室 3‧‧‧Intermediate compartment
4‧‧‧基板收納艙室 4‧‧‧Substrate storage compartment
5‧‧‧電位計 5‧‧‧potentiometer
6‧‧‧基板支持機構 6‧‧‧Substrate support organization
11‧‧‧絕緣板 11‧‧‧Insulation board
12‧‧‧電漿輸送路徑 12‧‧‧Pulp transport path
13‧‧‧電漿艙室 13‧‧‧Plastic chamber
14‧‧‧永久電磁鐵 14‧‧‧Permanent electromagnet
15‧‧‧線圈 15‧‧‧ coil
16‧‧‧絲極 16‧‧‧ 丝
B‧‧‧磁場 B‧‧‧ Magnetic field
G‧‧‧氣體噴出埠 G‧‧‧ gas squirting 埠
ID‧‧‧離子摻雜裝置(平面面板顯示器製造裝置) ID‧‧‧Ion doping device (flat panel display manufacturing device)
O‧‧‧靜電消除裝置 O‧‧‧Static elimination device
P‧‧‧電漿 P‧‧‧Plastic
S‧‧‧玻璃基板 S‧‧‧ glass substrate
R1‧‧‧真空環境機器人 R1‧‧‧vacuum environment robot
R2‧‧‧大氣環境機器人 R2‧‧‧Atmospheric environment robot
V‧‧‧閥體 V‧‧‧ valve body
Va‧‧‧電弧電弧 Va‧‧‧Arc Arc
Ve‧‧‧引出電源 Ve‧‧‧ leads the power supply
Vf‧‧‧絲極電源 Vf‧‧‧Wire power supply
X1‧‧‧搬運路徑 X1‧‧‧Transportation path
X2‧‧‧搬運路徑 X2‧‧‧Transportation path
第1圖係顯示平面面板顯示器製造裝置之一例的示意性俯視圖。 Fig. 1 is a schematic plan view showing an example of a flat panel display manufacturing apparatus.
第2圖係顯示靜電消除裝置之一例的示意性俯視圖。 Fig. 2 is a schematic plan view showing an example of a static elimination device.
第3圖係針對對於玻璃基板之電漿照射方向的說明圖。 Fig. 3 is an explanatory view for the direction of plasma irradiation of the glass substrate.
第1圖係離子摻雜裝置ID的示意性俯視圖。離子摻雜裝置ID係作為平面面板顯示器製造裝置,而使用於TFT元件的製造。第1圖省略與屬於本發明的特徵部分的靜電消除裝置O之配置無關的比處理艙室1更上游側(有關離子射束之輸送的部位)的圖示。 Figure 1 is a schematic top view of an ion doping device ID. The ion doping device ID is used as a flat panel display manufacturing device and is used for the manufacture of TFT elements. The first drawing omits the upstream side of the processing chamber 1 (the portion related to the transport of the ion beam) irrespective of the arrangement of the static electricity eliminating device O belonging to the characteristic portion of the present invention.
玻璃基板S係收納於大氣環境側的基板收納艙室4。進行基板處理時,玻璃基板S係沿著箭頭虛線X1所示的搬運路徑來搬運。 The glass substrate S is housed in the substrate storage compartment 4 on the atmospheric environment side. When the substrate processing is performed, the glass substrate S is transported along the transport path indicated by the broken line X1.
具體而言,玻璃基板S係利用大氣環境機器人R2從基板收納艙室4搬運至真空預備艙室2。之後,玻璃基板S係利用中間艙室3的真空環境機器人R1從真空預備艙室2搬運至處理艙室1的基板支持機構6。 Specifically, the glass substrate S is transported from the substrate storage compartment 4 to the vacuum preparation compartment 2 by the atmospheric environment robot R2. Thereafter, the glass substrate S is transported from the vacuum preparation compartment 2 to the substrate support mechanism 6 of the processing chamber 1 by the vacuum environment robot R1 of the intermediate compartment 3.
基板處理後,玻璃基板S係沿箭頭虛線X2所示的搬運路徑搬運至收納艙室4。 After the substrate processing, the glass substrate S is transported to the storage compartment 4 along the conveyance path indicated by the broken line X2.
在從真空環境機器人R1或大氣環境機器人R2所進行之玻璃基板S的搬運、玻璃基板S載置到基板支持機構6及/或從基板支持機構6移除玻璃基板S中,在玻璃基板S會有因受摩擦及/或剝離所產生的帶電電荷,而蓄積著帶電電荷。 In the glass substrate S transported from the vacuum environment robot R1 or the atmospheric environment robot R2, the glass substrate S is placed on the substrate support mechanism 6, and/or the glass substrate S is removed from the substrate support mechanism 6, the glass substrate S is There is a charged charge generated by friction and/or peeling, and a charged charge is accumulated.
在本發明中,係使用靜電消除裝置O,來將玻璃基板S所帶電的電荷予以靜電消除,該靜電消除裝置O係連接 於構成中間艙室3的真空容器的外壁面。 In the present invention, the static electricity removing device O is used to electrostatically cancel the electric charge charged by the glass substrate S, and the static eliminating device O is connected. The outer wall surface of the vacuum vessel constituting the intermediate compartment 3.
在習知技術中,在靜電消除前將惰性氣體前充置進行玻璃基板之靜電消除的艙室內之後,將充填至艙室內的惰性氣體予以電漿化,並使用該電漿來將玻璃基板予以靜電消除。 In the prior art, after the inert gas is charged in front of the static elimination of the glass substrate before the static elimination, the inert gas filled in the chamber is plasma-treated, and the plasma is used to apply the glass substrate. Static elimination.
相對於此,在本發明的靜電消除裝置O中,係根據從靜電消除裝置O所供給的電漿來進行玻璃基板S的靜電消除,所以不須在中間艙室3內預先填充惰性氣體。所以,本發明的靜電消除裝置O能夠在高真空下(例如,10-4Pa台)使用。 On the other hand, in the static electricity eliminating device O of the present invention, since the static elimination of the glass substrate S is performed based on the plasma supplied from the static electricity eliminating device O, it is not necessary to previously fill the intermediate chamber 3 with an inert gas. Therefore, the static electricity eliminating device O of the present invention can be used under high vacuum (for example, 10 -4 Pa table).
從靜電消除裝置O供給電漿的時序亦可為:以安裝於中間艙室3之天花板的電位計5量測玻璃基板的電位,而其量測結果超過基準值時進行。但是,如上述的量測並非必須,亦可構成為恆常地供應電漿。 The timing of supplying the plasma from the static electricity eliminating device O may be performed by measuring the potential of the glass substrate by the potentiometer 5 attached to the ceiling of the intermediate compartment 3, and when the measurement result exceeds the reference value. However, the above measurement is not essential, and it may be configured to supply the plasma constantly.
此外電位計5安裝的位置,亦可安裝於中間艙室3的地板、或真空環境機器人R1的機器手。再者,也可考慮安裝於中間艙室3以外的艙室、或安裝複數個電位計5等,各式各樣的構成。 Further, the position at which the potentiometer 5 is mounted may be attached to the floor of the intermediate compartment 3 or the robot of the vacuum environment robot R1. Further, it is also conceivable to install a plurality of chambers other than the intermediate compartment 3, or to mount a plurality of potentiometers 5, and the like.
雖然第1圖中繪製了將靜電消除裝置O連接於中間艙室3的構成,惟靜電消除裝置O的連接處不限定於中間艙室3。例如,靜電消除裝置O亦可連接於可切換大氣環境與真空環境之真空預備艙室2,只要在真空下進行搬運玻璃基板的場所(可利用為形成玻璃基板之搬入搬出的搬運路徑的場所),亦可為任何的場所。 Although the configuration in which the static electricity eliminating device O is connected to the intermediate compartment 3 is drawn in the first drawing, the connection of the static electricity eliminating device O is not limited to the intermediate compartment 3. For example, the static electricity eliminating device O may be connected to a vacuum pre-chamber 2 that can switch between an atmospheric environment and a vacuum environment, and a place where the glass substrate is transported under vacuum (a place where a transport path for loading and unloading the glass substrate can be used) Can also be any place.
此外,從靜電消除裝置O供應電漿的場所、與利用電位計5量測玻璃基板S之電位的場所不須一致。只要根據利用電位計5的量測結果來進行電漿的供應,則在玻璃基板S搬運的路線上,只要將藉由電位計5之進行電位量測的場所設為與從靜電消除裝置O供應電漿之場所為相同的場所、或放置於較電漿供應之場所還前段,就可因應量測結果來適當地供應電漿。 Further, the place where the plasma is supplied from the static electricity eliminating device O and the place where the potential of the glass substrate S is measured by the potentiometer 5 do not have to coincide. When the supply of the plasma is performed based on the measurement result of the potentiometer 5, the place where the potential measurement by the potentiometer 5 is performed is set to be supplied from the static elimination device O on the route of the glass substrate S. When the place of the plasma is the same place or placed in the front part of the place where the plasma is supplied, the plasma can be appropriately supplied according to the measurement result.
在第2圖中繪製有靜電消除裝置O的構成例。 A configuration example of the static electricity eliminating device O is shown in Fig. 2 .
靜電消除裝置O係經由絕緣板11來安裝於構成中間艙室3的真空容器的外壁面。該靜電消除裝置O的主要部分係以電漿艙室13、及電漿輸送路徑12所構成,該電漿艙室13係要產生由電子及離子所構成的電漿P,該電漿輸送路徑12係朝中間艙室3釋放以電漿艙室13產生的電漿P。 The static electricity eliminating device O is attached to the outer wall surface of the vacuum vessel constituting the intermediate cabin 3 via the insulating plate 11. The main part of the static elimination device O is composed of a plasma chamber 13 and a plasma transport path 12, which is to generate a plasma P composed of electrons and ions, and the plasma transport path 12 is The plasma P generated by the plasma chamber 13 is released toward the intermediate compartment 3.
在電漿艙室13中,利用從絲極(filament)16釋放的熱電子將通過氣體噴出埠(gas port)G並導入至艙室內的氙(xenon)或氬(argon)等惰性氣體予以電離,藉此產生電漿P。 In the plasma chamber 13, the hot electrons released from the filament 16 are ionized by an inert gas such as xenon or argon which is introduced into the chamber by a gas ejecting gas port G. Thereby, the plasma P is produced.
為了使在電漿艙室內的電漿產生容易、或使從靜電消除裝置的電漿P的釋放容易,靜電消除裝置O係具備有未圖示的絲極電源Vf、電弧(arc)電源Va(施加電壓為數十伏特)、及引出電源Ve(施加電壓為數十伏特)。 In order to facilitate the generation of plasma in the plasma chamber or to facilitate the release of the plasma P from the static electricity eliminating device, the static electricity eliminating device O includes a filament power source Vf and an arc power source Va (not shown). The applied voltage is several tens of volts, and the power supply Ve is applied (the applied voltage is several tens of volts).
在電漿艙室13的周圍配置有尖磁場(cusp magnetic field)產生用的永久電磁鐵14,該永久電磁鐵14係用以防止在電漿艙室13的內壁面的電子或離子消失。 A pointed magnetic field (cusp) is disposed around the plasma chamber 13 The magnetic field 14 is used to generate a permanent electromagnet 14 for preventing the disappearance of electrons or ions on the inner wall surface of the plasma chamber 13.
電漿輸送路徑12的外周係捲繞有一對線圈15,該一對線圈15係用以產生沿著輸送路徑的磁場B。電漿輸送路徑12的電漿P係被磁場B捕獲以避免因與輸送路徑壁面的碰撞所導致的消失,而朝中間艙室3內釋放。 The outer circumference of the plasma transport path 12 is wound with a pair of coils 15 for generating a magnetic field B along the transport path. The plasma P of the plasma transport path 12 is captured by the magnetic field B to avoid disappearance due to collision with the wall surface of the transport path, and is released into the intermediate chamber 3.
線圈15的構成不限定為一對,例如,電漿輸送路徑12較短時,線圈15的數量亦可為一個,線圈15亦可省略。此外,當電漿輸送路徑12較長時,線圈的數量亦可增加達三個以上。進一步地,亦可在一對線圈15間以不設置間隙之方式來形成連貫長度的線圈。另一方面,亦可在電漿輸送路徑12的外周配置取代線圈15的永久磁鐵,該永久磁鐵係用以為了避免在電漿輸送路徑12的壁面的電漿消失,而在電漿輸送路徑15的內壁面附近產生尖磁場者。 The configuration of the coil 15 is not limited to a pair. For example, when the plasma transport path 12 is short, the number of the coils 15 may be one, and the coil 15 may be omitted. Further, when the plasma transport path 12 is long, the number of coils can be increased by more than three. Further, a coil of a continuous length may be formed between the pair of coils 15 without providing a gap. On the other hand, a permanent magnet instead of the coil 15 may be disposed on the outer circumference of the plasma transport path 12 for preventing the plasma on the wall surface of the plasma transport path 12 from disappearing, and in the plasma transport path 15 A person who produces a sharp magnetic field near the inner wall surface.
若以與電漿的輸送方向成垂直的平面,來比對裁斷電漿輸送路徑12、與裁斷電漿艙室13時的裁斷剖面,電漿輸送路徑12的裁斷剖面會比電漿艙室13的裁斷剖面還小。因此關係,緩和了被導入至電漿艙室13的惰性氣體往電漿輸送路徑12側的穿越。藉此,提升了在電漿艙室13內的與電漿產生有關的氣體的利用效率。另外,在此所述的裁斷剖面不僅是指電漿艙室13或電漿輸送路徑12的壁面,亦指包含各艙室的內部空間的面。 If the cutting profile is cut in the plane perpendicular to the direction in which the plasma is conveyed, the cutting section of the plasma conveying path 12 is compared to the plasma compartment 13 in comparison with the cutting section when the plasma conveying path 12 is cut and the plasma compartment 13 is cut. The cutting profile is still small. Therefore, the relationship of the inert gas introduced into the plasma chamber 13 to the side of the plasma transport path 12 is alleviated. Thereby, the utilization efficiency of the gas related to plasma generation in the plasma chamber 13 is improved. In addition, the cutting section described herein means not only the wall surface of the plasma chamber 13 or the plasma conveying path 12, but also the surface including the internal space of each compartment.
就在上述的裁斷剖面而言,電漿輸送路徑 12與電漿艙室13的裁斷剖面中的電漿的輸送方向會有屬於恆定的情形,但亦會有非恆定的情形。例如,電漿輸送路徑12係以直徑沿著電漿的輸送方向變化的圓筒狀的真空容器所構成時,上述的裁斷剖面就未成為恆定。關於電漿艙室13亦會有相同的情形。 In the above cutting section, the plasma conveying path The direction of transport of the plasma in the cutting section of the plasma chamber 13 may be constant, but there may be a non-constant condition. For example, when the plasma transport path 12 is constituted by a cylindrical vacuum vessel whose diameter changes along the transport direction of the plasma, the above-described cutting cross section is not constant. The same is true for the plasma compartment 13.
在電漿的輸送方向中,當一方或兩構件的直徑變化時,上述的裁斷剖面的比較係在各構件裁斷剖面最小的部位進行。 In the direction in which the plasma is conveyed, when the diameter of one or both members is changed, the comparison of the above-described cutting sections is performed at the portion where the cutting section of each member is the smallest.
在電漿輸送路徑12係設置有進行輸送路徑的開閉用的閥體V。藉由該閥體V之設置,可將中間艙室3側保持在真空狀態,而將電漿艙室3側設成大氣開放,就能進行靜電消除裝置O之維護。 The valve body V for opening and closing the conveyance path is provided in the plasma conveyance path 12. By the provision of the valve body V, the intermediate chamber 3 side can be maintained in a vacuum state, and the plasma chamber 3 side can be set to open to the atmosphere, whereby the maintenance of the static electricity eliminating device O can be performed.
電漿輸送路徑12的電漿P被釋放側的端部,如圖示之方式亦可位於中間艙室3的真空容器壁面,惟只要在接近玻璃基板S的位置釋放電漿P來提升靜電消除效率,亦可朝中間艙室3內突出。 The end of the plasma P of the plasma transport path 12 on the release side, as shown, may also be located on the wall surface of the vacuum chamber of the intermediate chamber 3, but the plasma P is released at a position close to the glass substrate S to improve the static elimination efficiency. It can also protrude into the middle compartment 3.
另外,上述電漿輸送路徑12的設置並非必須者,亦可省略之,而將電漿艙室13直接連接於中間艙室3。 Further, the arrangement of the plasma transport path 12 is not essential, and the plasma chamber 13 may be directly connected to the intermediate chamber 3 instead of being omitted.
通常,玻璃基板S係屬於容易帶正電的性質,惟亦會有帶負電的情形。此外,亦可能發生玻璃基板S的表面背面兩面係相異電位帶電的情形。何種電位的帶電,係取決於在平面面板顯示器製造裝置所實施之玻璃基板S的處理內容。 Generally, the glass substrate S is a property that is easily positively charged, but there is also a case where it is negatively charged. Further, there may be a case where the front and back surfaces of the glass substrate S are electrically charged at different potentials. The charging of which potential depends on the processing content of the glass substrate S implemented in the flat panel display manufacturing apparatus.
例如,要對玻璃基板S施予成模處理時,若模的性質 為容易帶負電者,則由電位計5所測得的玻璃基板S的電位係量測為負電位。 For example, when the glass substrate S is subjected to a molding process, if the properties of the mold In order to easily carry a negative charge, the potential of the glass substrate S measured by the potentiometer 5 is measured to be a negative potential.
第3圖係繪製有從各個方向對玻璃基板S照射電漿P之例。 Fig. 3 is a diagram showing an example in which the glass substrate S is irradiated with the plasma P from various directions.
在第3圖(A)中,係從玻璃基板S的側方照射電漿P。根據這樣的構成,電漿P會包圍玻璃基板S而進入上表面與下表面的兩表面,所以可以一次就對兩表面靜電消除。 In the third diagram (A), the plasma P is irradiated from the side of the glass substrate S. According to this configuration, the plasma P surrounds the glass substrate S and enters both surfaces of the upper surface and the lower surface, so that the two surfaces can be statically removed at one time.
玻璃基板S的尺寸較大時,在第3圖(A)的構成中,係僅從玻璃基板S的一方側照射電漿P的構成,所以會有在電漿P照射側的相反側的靜電消除未充分進行的疑慮。 When the size of the glass substrate S is large, in the configuration of Fig. 3(A), the plasma P is irradiated only from one side of the glass substrate S, so that there is static electricity on the opposite side to the side where the plasma P is irradiated. Eliminate under-reported concerns.
此點,如第3圖(B),亦可從玻璃基板S的兩側照射電漿P。 At this point, as shown in FIG. 3(B), the plasma P can also be irradiated from both sides of the glass substrate S.
而且,如第3圖(C)所示,亦可對玻璃基板S的上下表面照射電漿P。此時,相較於第3圖(A)或第3圖(B)的構成較無法期待被照射在玻璃基板S的上表面的電漿P的往下表面側的進入,所以也要從玻璃基板S的下表面側照射電漿P才好。 Further, as shown in FIG. 3(C), the upper and lower surfaces of the glass substrate S may be irradiated with the plasma P. In this case, compared with the configuration of FIG. 3(A) or FIG. 3(B), it is less desirable to enter the lower surface side of the plasma P irradiated on the upper surface of the glass substrate S. It is preferable that the lower surface side of the substrate S is irradiated with the plasma P.
但是,若完成靜電消除對象的表面僅為玻璃基板S的任何一面即可,則從與作為靜電消除對象之表面的相對向位置照射電漿P即可。 However, if the surface on which the static elimination target is completed is only one side of the glass substrate S, the plasma P may be irradiated from a position facing the surface of the static elimination target.
另一方面,要確實解決靜電放電等的問題時,對玻璃基板S的兩表面進行靜電消除者較佳。 On the other hand, in order to reliably solve the problem of electrostatic discharge or the like, it is preferable to perform static elimination on both surfaces of the glass substrate S.
玻璃基板S經靜電消除後,仍有由於電漿 中之具有正電荷之離子或具有負電荷之離子而使玻璃基板S發生帶電的疑慮。 After the glass substrate S is removed by static electricity, it is still due to the plasma There is a concern that a positively charged ion or a negatively charged ion causes charging of the glass substrate S.
但是,於第2圖的構成所示的引出電壓Ve的電位係數十伏特,所以即便玻璃基板S有帶電之電漿中的離子或電子,玻璃基板S的電位充其量為數十伏特。這樣的帶電電壓與因受剝離帶電所造成玻璃基板S的電位達電位數千伏特相比為微乎其微,該等原因而引起靜電放電問題等的可能性低,並不會對玻璃基板處理的良率有影響。 However, since the potential value of the extraction voltage Ve shown in the configuration of Fig. 2 is ten volts, even if the glass substrate S has ions or electrons in the charged plasma, the potential of the glass substrate S is at most tens of volts. Such a charged voltage is less likely to be caused by a potential of several thousand volts due to the potential of the glass substrate S due to peeling electrification, and the possibility of causing an electrostatic discharge problem or the like is low, and the yield of the glass substrate is not treated. influential.
在第1圖中,就平面面板顯示器製造裝置而言,茲舉離子摻雜裝置為例。但是,本發明的對象並不限定為平面面板顯示器製造裝置。 In Fig. 1, in the case of a flat panel display manufacturing apparatus, an ion doping apparatus is taken as an example. However, the object of the present invention is not limited to a flat panel display manufacturing apparatus.
例如,亦可如成膜裝置等之多工艙方式的裝置。此外,亦可將各個裝置以串聯接續之方式結合的生產線方式的裝置。 For example, it is also possible to use a multi-chamber type device such as a film forming apparatus. In addition, it is also possible to combine the devices in a line-connected manner in a line-type manner.
在本發明的構成中,只要是靜電消除裝置O連接於成為真空下之玻璃基板S的搬運路徑之真空容器的外壁面的構成,則可應用在任何的平面面板顯示器製造裝置。 In the configuration of the present invention, any configuration of the flat panel display manufacturing device can be applied as long as the static electricity eliminating device O is connected to the outer wall surface of the vacuum container that serves as the conveyance path of the glass substrate S under vacuum.
在上述實施形態中,係就從靜電消除裝置O釋放電漿P的構成加以說明,但是亦可將電漿P取代成僅釋放電子的構成。例如,以第2圖的構成停止通過氣體噴出埠G的惰性氣體的供應,藉此不產生電漿,僅將電子從靜電消除裝置O釋放於中間艙室3也可。 In the above embodiment, the configuration in which the plasma P is discharged from the static electricity eliminating device O will be described. However, the plasma P may be replaced with a structure in which only electrons are released. For example, the supply of the inert gas passing through the gas discharge port G is stopped in the configuration of Fig. 2, whereby no plasma is generated, and only electrons may be released from the static elimination device O to the intermediate compartment 3.
當僅供應電子的情形,不須於電漿艙室13設置氣體噴出埠G。 When only the electrons are supplied, it is not necessary to provide the gas ejection 埠G in the plasma chamber 13.
僅供應電子、或供應電漿P,亦可例如依據電位計5的量測結果來適當選擇。 It is only necessary to supply electrons or supply plasma P, and may be appropriately selected, for example, according to the measurement result of the potentiometer 5.
在上述實施形態中,就電漿產生的手段係採用電子撞擊的手段,惟亦可藉由高頻放電來產生電漿。 In the above embodiment, the means for generating plasma is by means of electron impact, but it is also possible to generate plasma by high-frequency discharge.
此外,就釋放熱電子的構成而言,亦可採用代換絲極的組合板狀陰極與絲極的間接加熱型陰極或空心型陰極。 Further, in terms of the structure for releasing the hot electrons, it is also possible to use an indirect heating type cathode or a hollow type cathode in which a combined plate cathode and a filament of the filament are substituted.
在第3圖(B)、第3圖(C)中,將複數個靜電消除裝置配置在玻璃基板S的上下左右不同的部位的構成,惟亦可將複數個靜電消除裝置O配置在玻璃基板S的上下左右的相同側。 In FIGS. 3(B) and 3(C), a plurality of static electricity eliminating devices are disposed on the upper and lower sides of the glass substrate S, but a plurality of static electricity eliminating devices O may be disposed on the glass substrate. The same side of the top, bottom, left, and right of S.
例如,在第3圖(A)的構成中,靜電消除裝置O亦可排列在紙面上下方向或紙面正前方方向。此外,亦可將複數個靜電消除裝置作為一個單元來使用。 For example, in the configuration of Fig. 3(A), the static electricity eliminating device O may be arranged in the direction in which the paper is in the up-down direction or in the direction directly in front of the paper. Further, a plurality of static electricity eliminating devices may be used as one unit.
另外,除上述以外,在未脫離本發明的主旨之範圍內可有各種改良及/或變形乃不言可喻。 Further, various modifications and/or changes may be made without departing from the spirit and scope of the invention.
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