WO2016186046A1

WO2016186046A1 - Substrate destaticizing mechanism and vacuum treatment apparatus using same

Info

Publication number: WO2016186046A1
Application number: PCT/JP2016/064361
Authority: WO
Inventors: 貴啓廣野
Original assignee: 株式会社アルバック
Priority date: 2015-05-15
Filing date: 2016-05-13
Publication date: 2016-11-24
Also published as: JP6526186B2; TW201706437A; JPWO2016186046A1; KR20170137875A; CN107532291A; CN107532291B; KR102062442B1; TWI673384B

Abstract

Provided is a technique which is used for, for example, devices for forming a film on a film-like substrate in vacuum and allows efficient destaticization using a simple structure without affecting a treated region. The present invention also provides a substrate destaticizing mechanism which destaticizes, by magnetron discharge, a film formation film 10 being transported in vacuum. According to the present invention, the substrate destaticizing mechanism comprises: a housing 51 to which a discharge gas is introduced; linear discharge electrodes 53 which are disposed perpendicular to the direction of transportation of the substrate in the housing 51 and to which a predetermined voltage is applied; and magnets 54A disposed near the discharge electrodes 53. The magnets 54A are disposed so as to cause an electrical discharge according to the distribution of the charge amount in the film formation film 10.

Description

Substrate neutralization mechanism and vacuum processing apparatus using the same

The present invention relates to a technique for discharging a substrate in a vacuum, and more particularly, to a technique for discharging a film-like processing substrate.

Conventionally, while winding a long film-like substrate continuously fed from a feeding roller around a cooling can roller, an evaporation substance from an evaporation source disposed opposite to the can roller is vapor-deposited on the raw film, and vapor deposition is performed. 2. Description of the Related Art A winding-type vacuum vapor deposition apparatus that winds a subsequent raw material film with a winding roller is known (see, for example, Patent Document 1).

In such a winding type vacuum vapor deposition apparatus, there is a problem that wrinkles are generated on the film when the film is wound on the winding roller due to the influence of the electric charge remaining on the film, and the film cannot be properly wound.

Therefore, in order to solve this problem, a method has been proposed in which a static elimination unit that neutralizes the film after film formation by plasma treatment is installed, and the electric charge charged on the film is removed by this static elimination unit before winding the film. (See Patent Document 2).

On the other hand, in such a conventional technique, after a thin film is formed on the film, it is conveyed to a take-up roller through a plurality of rollers and wound up. There is a problem that there is a risk of damage.

For this reason, conventionally, as a film running mechanism, a guide section having a circular cross section having a larger outer diameter than the roller main body is provided on a roller main body of a guide roller having a circular cross section so that both edges of the film are placed. Two guide portions having a circular cross section having a larger outer diameter than the roller body are provided on the roller body of the auxiliary roller having a rotation axis parallel to the rotation axis of the guide roller. Provided at the same interval as the guide part, and transported with both ends of the film sandwiched between the guide part of the guide roller and the guide part of the auxiliary roller, and damage to the thin film formed on the film There has been proposed one that is stably conveyed without giving (see Patent Document 3).

However, when a film is transported using such a traveling mechanism, there is a problem that the charge amount due to static electricity is larger than the central portion at both ends of the film sandwiched between the guide roller and the auxiliary roller.

For this reason, when the above-described static elimination unit is used when transporting and forming a film using such a traveling mechanism, the static elimination is performed by plasma generated uniformly in the width direction of the film, so that the charge amount is large. If the charge cannot be sufficiently removed from the portion, and if it is attempted to remove electricity sufficiently from the portion with a large amount of charge by strengthening the plasma due to discharge, the film formation area on the film may be affected. There is a problem that the amount of power consumption and power consumption increases, and further, if the number of static elimination units is increased, the device configuration becomes complicated and large.

Japanese Patent No. 3795518 WO2006 / 088084 pamphlet Japanese Patent No. 5024972

The present invention has been made to solve the above-described problems of the prior art, and the object of the present invention is to affect the processing area in an apparatus for performing a film forming process on a film-like substrate in a vacuum. It is an object of the present invention to provide a technique capable of efficiently performing static elimination with a simple configuration without giving.

The present invention made in order to solve the above-mentioned problems is a substrate neutralization mechanism for performing neutralization by magnetron discharge on a processing substrate transported in a vacuum, a discharge container into which a discharge gas is introduced, and the discharge A linear discharge electrode to which a predetermined voltage is applied and a magnet disposed in the vicinity of the discharge electrode, the magnet being disposed in the vicinity of the discharge electrode. The magnet is disposed so as to generate a discharge according to the distribution of the charge amount.
The present invention is also effective when the magnet is arranged so as to partially generate a discharge in the longitudinal direction of the discharge electrode.
The present invention is also effective when the magnet is arranged so as to generate discharge at portions corresponding to both edges of the processing substrate of the discharge electrode.
The present invention is also effective when a plurality of magnets having different lengths in the longitudinal direction are arranged so as to generate a strong plasma portion due to discharge and a weak plasma portion due to discharge in the longitudinal direction of the discharge electrode. Is.
The present invention is also effective when the processing substrate is a film.
On the other hand, the present invention includes a vacuum chamber, a processing source disposed in the vacuum chamber, and a processing substrate that is transported through the predetermined transport path in the vacuum chamber and processed by the processing source. In the vacuum processing apparatus, any one of the above-described substrate static elimination mechanisms is disposed in the vicinity of the transfer path.
In the present invention, a guide travel mechanism that guides and travels in a state where the processing substrate is sandwiched is provided, and discharge is generated in a portion of the discharge electrode corresponding to a portion where the processing substrate is sandwiched by the guide travel mechanism. Thus, it is also effective when the magnet is arranged.
The present invention is also effective when the processing source is a film forming source.
The present invention is also effective when the magnet is disposed so as to generate a discharge in a portion corresponding to a non-film formation region of the processing substrate.

The substrate static elimination mechanism of the present invention has a linear discharge electrode that is arranged so as to intersect the substrate transport direction in the discharge container, and is charged on, for example, a film-shaped processing substrate. Since magnets are arranged so as to generate magnetron discharge according to the distribution of the amount, for example, the film is deposited on the processing substrate in a vacuum by strengthening the discharge to a portion with a large charge amount of the processing substrate. In the apparatus that performs the above process, it is possible to perform the charge removal efficiently without affecting the processing region.
In addition, according to the present invention, it is not necessary to increase the intensity of plasma due to discharge more than necessary, so that the power applied to the discharge electrode can be suppressed, thereby reducing the consumption amount and power consumption of the discharge electrode. Can do.
In the present invention, when the magnet is disposed so as to cause partial discharge in the longitudinal direction of the discharge electrode (for example, portions corresponding to both edges of the discharge electrode processing substrate), the charge amount of the processing substrate Since the discharge can be generated only for the large portion, it is possible to simplify and improve the efficiency of the static elimination mechanism.
In the present invention, when a plurality of magnets having different lengths in the longitudinal direction are arranged so as to generate a strong portion of plasma due to discharge and a weak portion of plasma due to discharge with respect to the longitudinal direction of the discharge electrode, As a result, it is possible to reliably remove electricity from a portion having a large charge amount, so that it is possible to optimize the electricity removal for the processing substrate.
In the present invention, a vacuum chamber, a processing source (for example, a film forming source) disposed in the vacuum chamber, and a film that is transported through the predetermined transport path in the vacuum chamber and processed by the processing source. According to the vacuum processing apparatus in which any one of the above-described substrate static elimination mechanisms is disposed in the vicinity of the transfer path, for example, it is efficient with a simple configuration without affecting the film formation region. It is possible to provide a film formation apparatus that can perform static elimination.
In particular, a magnet has a guide travel mechanism that guides and travels with the processing substrate sandwiched, and generates a discharge in a portion of the discharge electrode of the static elimination mechanism that corresponds to the portion of the processing substrate that is sandwiched by the guide travel mechanism. Is disposed, for example, in a film forming apparatus that can be stably transported without damaging the thin film formed on the film-like processing substrate, the charging of the processing substrate is effectively performed. Can be removed.

Schematic configuration diagram showing an example of a winding film forming apparatus according to an embodiment of the present invention (A) (b): Partial sectional view showing an example of a guide traveling mechanism in the present embodiment FIG. 3A shows an example of a conventional static elimination mechanism, FIG. 3A is a front view showing the internal configuration, and FIG. 3B is a side view showing the internal configuration. FIG. 4A shows an example of the static elimination mechanism of the present embodiment, FIG. 4A is a front view showing the internal configuration, and FIG. 4B is a side view showing the internal configuration. (A) (b): Schematic diagram showing the action of the static elimination mechanism of this example FIG. 6A shows another example of the static elimination mechanism of the present embodiment, FIG. 6A is a front view showing the internal configuration, and FIG. 6B is a side view showing the internal configuration. (A) (b): Schematic diagram showing the action of the static elimination mechanism of this example FIG. 8A shows a main part of another example of the static elimination mechanism of the present embodiment. FIG. 8A is a schematic configuration diagram showing the internal configuration of the film forming film and the electrode unit of the static elimination mechanism, and FIG. Is a schematic diagram showing the operation of the static elimination mechanism of this example

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic configuration diagram showing an example of a winding film forming apparatus according to an embodiment of the present invention.
Hereinafter, the vertical relationship between members will be described by taking the case shown in FIG. 1 as an example.

As shown in FIG. 1, a winding film forming apparatus (vacuum processing apparatus) 1 according to the present embodiment includes a vacuum chamber 2, and a feeding / winding chamber provided in the upper portion of the vacuum chamber 2. 2A and a film forming chamber 2B provided in the lower part of the vacuum chamber 2.
The feeding / winding chamber 2A and the film forming chamber 2B are each connected to a vacuum exhaust system (not shown).

For example, a film forming film roll 3 around which a film forming film (processing substrate) 10 is wound, and a winding for winding the film forming film 10 formed on the upper part of the feeding / winding chamber 2A. A roller 6 is provided.

Guide rollers

11 and 12 and a cooling roller 13 are provided on the downstream side in the film conveying direction of the film forming film roll 3 in the feeding / winding chamber 2A.
Here, the cooling roller 13 is provided so as to straddle the feeding / winding chamber 2A and the film forming chamber 2B, and the evaporation source disposed in the film forming chamber 2B in a state where the film 10 for film formation is stretched over. (Film forming source) 20 is arranged so as to face.

Further, a guide travel mechanism 4 described later is provided in the vicinity of the cooling roller 13 in the feeding / winding chamber 2A, and a static elimination mechanism (substrate neutralization mechanism) 5 is provided downstream of the guide travel mechanism 4 in the film transport direction. Is provided.
Further, a guide roller 14 is provided between the neutralization mechanism 5 and the winding roller 6 on the downstream side in the film conveyance direction.

In such a configuration, the film forming film 10 fed out from the film forming film roll 3 in the feeding / winding chamber 2A is passed over the cooling roller 13 via the

guide rollers

11 and 12 described above, and is formed. After deposition is performed by the evaporation source 20 in the film chamber 2B, the film is taken up by the take-up roller 6 through the guide travel mechanism 4, the charge removal mechanism 5, and the guide roller 14 in the feeding / winding chamber 2A. It has become.

FIGS. 2A and 2B are partial cross-sectional views showing examples of the guide travel mechanism in the present embodiment.
The guide travel mechanism 4 (4A) shown in FIG. 2A is composed of a guide roller 40A and a pressing roller 41.

Here, the guide roller 40A has a roller main body 42 having a circular cross section, and the guide body 43 made of, for example, silicone rubber and having a circular outer cross section having a larger outer diameter than the roller main body 42 is provided on the roller main body 42. The film forming film 10 is provided with a predetermined interval so that both edge portions, which are non-film forming regions other than the film forming region, are placed.

On the other hand, the pressing roller 41 has two circular guide sections 45 having a circular outer section and a larger outer diameter than the roller main body 44, and the guide roller 45 having a circular section and a rotation axis parallel to the rotation axis of the guide roller 40 A. It is provided with an interval equivalent to the guide portion 43 of 40A.

The film forming film 10 is pressed against the film forming film 10 inserted between the guide roller 40A and the pressing roller 41 by a pressing means (not shown) toward the guide roller 40A. The vehicle is configured to guide and run in a state where ten edge portions, that is, non-deposition regions are sandwiched.

The guide travel mechanism 4 (4B) shown in FIG. 2B is composed of a guide roller 40B and a plurality of pressing mechanisms 46.
Here, the guide roller 40B has substantially the same configuration as the guide roller 40A shown in FIG. 2A. The guide body 40B has three guide portions 43 having a circular cross section having a larger outer diameter than the roller body 42. Are provided at predetermined intervals so that the central portion and both edge portions which are non-deposition regions other than the deposition region of the film for film formation 10 are placed.

On the other hand, in the pressing mechanism 46, a pressing roller 48 that is rotatable about a rotation support shaft 47 parallel to the rotation axis of the guide roller 40B described above is attached to the main body 49, and in this example, the guide roller 40B. The three pressing mechanisms 46 are provided at the same interval as the guide portion 43.

The film forming film 10 is pressed against the film 10 for film formation inserted between the guide roller 40B and the pressing mechanism 46 by the pressing means (not shown) toward the guide roller 40B. It is configured so as to guide it across both the edge portions and the central portion, that is, the non-deposition region.
According to the

guide travel mechanisms

4A and 4B having the above configuration, the film forming film 10 can be stably guided and traveled in a state where the film formation region is protected.

3 (a) and 3 (b) show an example of a conventional static elimination mechanism. FIG. 3 (a) is a front view showing the internal configuration, and FIG. 3 (b) is a side view showing the internal configuration. It is.
This static elimination mechanism 105 is a pair type, and two identical electrode units 150 are provided in a metal housing 151 into which a discharge gas 130 is introduced.

Here, the two electrode units 150 are provided on both sides of the film for film formation 110, and are introduced in the form of straight bars arranged so as to be parallel to the film transport path and orthogonal to the film transport direction. The electrode 152 and the linear cylindrical discharge electrode 153 provided concentrically with the introduction electrode 152 are provided.

The introduction electrode 152 of each electrode unit 150 is disposed in a state where it is electrically connected to the discharge electrode 153 in the discharge electrode 153 into which a cooling medium such as water is introduced, and a plurality of, for example, permanent magnets are disposed around the introduction electrode 152 A cylindrical magnet 154 is provided.

The plurality of magnets 154 are provided across the entire region in the width direction of the film for film formation 110 so as to be separated from the shielding plate 155, and are configured such that the polarities of the adjacent magnets 154 are reversed.
A predetermined voltage is applied to the introduction electrode 152 of each electrode unit 150 with the grounded housing 151 from the DC power source 156 so that the introduction electrode 152 side becomes a negative electrode.

In such a configuration, when a predetermined voltage is applied between the housing 151 and the introduction electrode 152 in the static elimination mechanism 105 while the film for film formation 110 is conveyed to form a film, the film is formed around the electrode unit 150. Plasma by magnetron discharge is generated over the entire width direction of the film for film 110, and the plasma collides with the film for film formation 110, so that the film formation film 110 is neutralized.

4 (a) and 4 (b) show examples of the static elimination mechanism of the present embodiment, FIG. 4 (a) is a front view showing the internal configuration, and FIG. 4 (b) is the internal configuration. FIG.
This static elimination mechanism (substrate static elimination mechanism) 5A is a pair type similar to the above-described conventional example, and for example, two identical ones in a metal housing (discharge vessel) 51 into which a discharge gas 30 such as argon is introduced. An electrode unit 50A having a configuration is provided.

Here, the two electrode units 50A are provided on both sides of the film 10 for film formation, and are introduced in the form of straight bars arranged so as to be parallel to the film transport path and orthogonal to the film transport direction. The electrode 52 and the linear cylindrical discharge electrode 53 provided concentrically with the introduction electrode 52 are provided.

The introduction electrode 52 of each electrode unit 50A is arranged in a state where it is electrically connected to the discharge electrode 53 in the discharge electrode 53 into which a cooling medium such as water is introduced. A cylindrical magnet 54A is provided.
In this example, a plurality (two in this embodiment) of magnets 54 A are arranged so as to cause partial discharge in the longitudinal direction of the discharge electrode 53.

Here, as the magnet 54A, either an integral type or a plurality of small pieces can be used. Further, as the two magnets 54A, either one in which the same magnetic circuit is formed or one in which different magnetic circuits are formed can be used.

These two magnets 54A are provided at an interval equivalent to the guide portion 43 of the guide travel mechanism 4A shown in FIG. 2A, that is, at an interval equivalent to the width of the film 10 for film formation. The polarity is reversed.
A predetermined voltage is applied to the introduction electrode 52 of each electrode unit 50 A by the DC power source 56 so that the introduction electrode 52 side becomes a negative electrode with the grounded housing 51.

FIGS. 5A and 5B are schematic views showing the operation of the static elimination mechanism of this example.
As shown in FIG. 5A, in this example, the two magnets 54A are provided at an interval equivalent to the guide portion 43 of the guide travel mechanism 4A, that is, an interval equivalent to the width of the film 10 for film formation. ing.

Therefore, in this example, when a voltage is applied to the introduction electrode 52 of the electrode unit 50A, the plasma 15 is generated only in the vicinity of the two magnets 54A as shown in FIG. Only the non-deposition regions at both edges of the film for film 10 are exposed to the plasma 15 and the charge removal is performed.

6 (a) and 6 (b) show other examples of the static elimination mechanism of the present embodiment. FIG. 6 (a) is a front view showing its internal configuration, and FIG. 6 (b) is its internal view. It is a side view which shows a structure. Hereinafter, the same reference numerals are given to portions corresponding to the above example, and detailed description thereof will be omitted.

The static elimination mechanism (substrate static elimination mechanism) 5 B of this example is provided with two electrode units 50 B having the same configuration in a housing 51.
The static elimination mechanism 5B has the same basic configuration as the static elimination mechanism 5A described above, and is different from the static elimination mechanism 5A in the number and arrangement position of the magnets 54B.

That is, in the static elimination mechanism 5B of this example, two electrode units 50B having the same configuration are provided in the housing 51 described above, and each electrode unit 50B has the introduction electrode 52 disposed in the discharge electrode 53 described above, Are provided with three cylindrical magnets 54B made of, for example, permanent magnets.

Here, as the magnet 54B, either an integral type or a plurality of small pieces can be used. Further, as the three magnets 54B, either one in which the same magnetic circuit is formed or one in which different magnetic circuits are formed can be used.

These three magnets 54B are provided at portions corresponding to the central portion and both edge portions of the film 10 for film formation at intervals equivalent to the adjacent guide portions 43 of the guide travel mechanism 4B shown in FIG. The polarity of the adjacent magnet 54B is reversed.

Then, a predetermined voltage is applied to the introduction electrode 52 of each electrode unit 50B from the DC power source 56 so that the introduction electrode 52 side becomes a negative electrode with respect to the grounded housing 51.

FIGS. 7A and 7B are schematic views showing the operation of the static elimination mechanism of this example.
As shown in FIG. 7A, in the case of this example, the three magnets 54B are provided at the same interval as the adjacent guide portions 43 of the guide travel mechanism 4B. When a voltage is applied to the electrode 52, as shown in FIG. 7B, the plasma 15 is generated only in the vicinity of the three magnets 54B. As a result, the central portion and both edge portions of the film for film 10 are formed. Only the non-film-forming region is exposed to the plasma 15 and the charge removal is performed.

As described above, in the

static elimination mechanisms

5A and 5B of the present embodiment, it is possible to eliminate static electricity only in the non-deposition region of the film 10 for film formation, so that the neutralization can be performed efficiently without affecting the deposition region. In addition, for example, it is possible to provide the

static elimination mechanisms

5A and 5B having a simple configuration as compared with the prior art shown in FIGS. 3 (a) and 3 (b).

Further, according to the present embodiment, since it is not necessary to increase the intensity of plasma due to the discharge more than necessary, it is possible to suppress the power applied to the introduction electrode 52, and thereby the consumption of the introduction electrode 52 and the discharge electrode 53. The amount and power consumption can be reduced.

FIGS. 8A and 8B show the main part of another example of the static elimination mechanism of the present embodiment. FIG. 8A shows the internal configuration of the film forming film and the electrode unit of the static elimination mechanism. FIG. 8B is a schematic diagram illustrating the operation of the static elimination mechanism of the present example. Hereinafter, the same reference numerals are given to portions corresponding to the above example, and detailed description thereof will be omitted.

In a roll-up film forming apparatus to which the present invention is applied, film formation may be performed on the film for film formation 10 through a mask 10a (see FIG. 8A).
In this case, a region between adjacent masks 10a on the film 10 for film formation becomes a film formation region, and a region on the mask 10a becomes a non-film formation region.

When a conductive material is deposited by vapor deposition using such a mask 10a, the charge amount of the portion of the mask 10a that is a non-deposition region may be larger than the charge amount of the deposition region.
In such a case, it is possible to carry out static elimination only in the non-film-forming region using the above-described

static elimination mechanisms

5A and 5B. However, in this example, static elimination is performed using the following electrode unit 50C. Yes.

As shown in FIG. 8A, the electrode unit 50 C of this example is provided with a plurality of magnets 54 C and 54 c across the entire area in the width direction of the film for film 10 with a shielding plate 55 interposed therebetween.
Here, a plurality of

magnets

54C and 54c having different lengths with respect to the longitudinal direction of the introduction electrode 52 (discharge electrode 53) are arranged.

Specifically, a magnet 54C having a long length is disposed in a portion corresponding to the mask 10a of the film 10 for film formation of the introduction electrode 52, and a portion corresponding to the film formation region of the film 10 for film formation of the introduction electrode 52. In addition, a magnet 54c having a shorter length than the magnet 54C is disposed. The

adjacent magnets

54C and 54c are configured so that the polarities are reversed.
Here, as the

magnets

54C and 54c, either an integral type or a plurality of small pieces can be used.

In this example, when a voltage is applied to the introduction electrode 52, as shown in FIG. 8B, the strength of the plasma 16 caused by the discharge in the portion where the long magnet 54C is disposed is short. It becomes stronger than the strength of the plasma 17 due to the discharge of the portion where the magnet 54c is disposed.

Further, according to this example having such a configuration, it is possible to reliably perform static elimination on a non-deposition region having a large charge amount while neutralizing the film forming film 10 as a whole. It is possible to optimize the charge removal for the film 10 for a film.

As described above, according to the present embodiment, it is possible to provide a take-up film forming apparatus that can efficiently perform static elimination with a simple configuration.

The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, in the above-described embodiment, the pair-type substrate neutralization mechanism has been described as an example. However, the present invention is not limited to this, and may be applied to a single-type substrate neutralization mechanism or a two-pair type substrate neutralization mechanism. it can.

Moreover, about the magnet used for magnetron discharge, an electromagnet can also be used other than a permanent magnet.
Furthermore, the present invention can be applied not only to an apparatus for forming a film by vapor deposition but also to various vacuum processing apparatuses such as a sputtering apparatus and an etching apparatus.

Furthermore, in the above-described embodiment, a series of long films have been described as examples of the processing substrate. However, the present invention is not limited to this, and a cut film, for example, may be used as long as the substrate can be transported in a vacuum. It can also be applied to those made of flat glass.

On the other hand, in the examples shown in FIGS. 8 (a) and 8 (b), magnets having different lengths are used in order to vary the plasma strength caused by the discharge. For example, a magnet made of neodymium or the like having a strong magnetic force is used. It is also possible to vary the intensity of the plasma.

1 ... Take-up type film forming equipment (vacuum processing equipment)
2 ... Vacuum chamber 3 ... Film roll for

film formation

4, 4A, 4B ...

Guide travel mechanism

5, 5A, 5B ... Static elimination mechanism (substrate static elimination mechanism)
6 ... Winding roller 10 ... Film for film formation (processing substrate)
30 ……

Discharge gas

50A, 50B …… Electrode unit 51 …… Housing (discharge vessel)
52 ... Introduction electrode 53 ...

Discharge electrodes

54A, 54B ... Magnet 56 ... DC power supply

Claims

A substrate static elimination mechanism that eliminates static electricity by magnetron discharge on a processing substrate conveyed in vacuum,
A discharge vessel into which discharge gas is introduced;
A linear discharge electrode that is arranged so as to intersect the substrate transport direction in the discharge container and to which a predetermined voltage is applied;
A magnet disposed in the vicinity of the discharge electrode;
A substrate static elimination mechanism in which the magnet is disposed so as to generate a discharge according to a distribution of charge amount on the processing substrate.
The substrate static elimination mechanism according to claim 1, wherein the magnet is arranged so as to cause partial discharge in the longitudinal direction of the discharge electrode.
The substrate static elimination mechanism according to claim 2, wherein the magnet is disposed so as to generate discharge at portions corresponding to both edges of the processing substrate of the discharge electrode.
2. The substrate neutralization mechanism according to claim 1, wherein a plurality of magnets having different lengths in the longitudinal direction are arranged so as to generate a strong plasma portion caused by discharge and a weak plasma portion caused by discharge in the longitudinal direction of the discharge electrode. .
The substrate static elimination mechanism according to any one of claims 1 to 4, wherein the processing substrate is a film.
A vacuum chamber;
A processing source disposed in the vacuum chamber;
A processing substrate which is transported via a predetermined transport path in the vacuum chamber and processed by the processing source;
A substrate static elimination mechanism disposed in the vicinity of the transport path,
The substrate neutralization mechanism is a substrate neutralization mechanism for performing neutralization by magnetron discharge on a processing substrate conveyed in a vacuum, and a discharge container into which a discharge gas is introduced, and a substrate conveyance direction in the discharge container A linear discharge electrode to which a predetermined voltage is applied and a magnet disposed in the vicinity of the discharge electrode, and depending on the distribution of charge amount on the processing substrate A vacuum processing apparatus in which the magnet is arranged to generate electric discharge.
The magnet has a guide traveling mechanism that guides and travels in a state of sandwiching the processing substrate, and generates a discharge in a portion of the discharge electrode that corresponds to a portion of the processing substrate sandwiched by the guide traveling mechanism. The vacuum processing apparatus according to claim 6, wherein
The vacuum processing apparatus according to claim 6 or 7, wherein the processing source is a film forming source.
The vacuum processing apparatus according to claim 8, wherein the magnet is disposed so as to generate a discharge in a portion corresponding to a non-deposition region of the processing substrate.