TWI673384B - Substrate neutralization mechanism and vacuum processing apparatus using the same - Google Patents

Abstract

Provided is a technology capable of performing high-efficiency static elimination with a simple configuration in a device that performs film formation and the like on a film-like substrate in a vacuum without affecting the processing area. The present invention is a substrate static elimination mechanism for a film-forming film material (10) that is transported in a vacuum to discharge electricity by magnetron discharge. In the present invention, a case (51) is provided, in which a discharge gas is introduced, and a linear discharge electrode (53) intersects in the case (51) with respect to a substrate conveying direction. And a specific voltage is applied; and a magnet (54A) is arranged near the discharge electrode (53) so as to correspond to the distribution of the charge amount at the film forming material (10). A magnet (54A) is arranged so that a discharge is generated.

Description

Substrate static elimination mechanism and vacuum processing device using the same

The present invention relates to a technique for removing electricity from a substrate in a vacuum, and more particularly to a technique for removing electricity from a film-like processed substrate.

From the prior art, it has been known that a long film-shaped substrate continuously fed from a feeding roller is wrapped around a cooling can-roller, and the slave is connected with the The evaporation substance from the can-shaped roller as an evaporation source disposed oppositely is vapor-deposited on the raw material film, and the raw material film material after the evaporation is wound by a winding type vacuum evaporation device ( For example, refer to Patent Document 1).

In such a roll-type vacuum evaporation device, wrinkles are generated at the film material during the winding of the film material due to the influence of the charge remaining on the film material, which occurs. Problems with proper winding.

Therefore, in order to solve this problem, it is proposed to provide a static elimination unit for performing static elimination by performing plasma treatment on the film material after film formation. A method of removing the charges charged on the film material by the static electricity removing unit before winding the film material (refer to Patent Document 2).

On the other hand, in this prior art, after a film is formed on a film material, it is transported to a winding roller through a plurality of rollers and wound, so it is formed by a film material. The surface will come into contact with the roller and raise the issue of the possibility of damage to the film.

Therefore, in the prior art, as a running mechanism of the film material, it is proposed to guide the guide roller having a circular cross-section in a circular cross-section with a larger circular cross-section than the roller body. Two rolls are provided at a specific interval so that the two edge portions of the film material are placed, and an auxiliary roller having a rotation axis parallel to the rotation axis of the guide tube is provided. At the roller body, two guide portions having a circular cross-section having a larger outer diameter than the roller body are provided, and the guide portions of the guide roller are provided at equal intervals, and Both ends of the film material are sandwiched and carried by the guide portion of the guide roller and the guide portion of the auxiliary roller, so as to prevent damage to the film formed on the film material. On the other hand, it is conveyed stably (refer to patent document 3).

However, when the film material is transported using such a walking mechanism, there is a change in the amount of charge due to static electricity at both ends of the film material which is sandwiched by the guide roller and the auxiliary roller. It is a bigger problem than the central part.

Therefore, if the above-mentioned static elimination unit is used when the film material is transported and formed using such a walking mechanism, the static elimination is performed by the plasma generated uniformly in the wide direction of the film material. , Therefore, it is impossible to fully remove the large charged part. On the other hand, if the plasma caused by the discharge is strengthened and fully charged, the part with large charged amount will be charged. The film formation area may cause an influence, and the consumption amount and power consumption of the discharge electrode may increase. Furthermore, if the static elimination unit is increased, there is a problem that the device configuration becomes complicated and large.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 3795518

[Patent Document 2] WO2006 / 088024

[Patent Document 3] Japanese Patent No. 5024972

The present invention has been made in order to solve the above-mentioned problems of the prior art, and an object thereof is to provide an apparatus capable of forming a film-like substrate or the like in a vacuum and processing the film in a vacuum. A technology that removes the influence of the processing area with a simple structure and achieves high-efficiency static elimination.

The present invention has been made in order to solve the above-mentioned problems, and is directed to a process in which a process is carried out in a vacuum by a magnetron discharge. The static elimination board static elimination mechanism is characterized by comprising: a discharge vessel to which a discharge gas is introduced; and a linear discharge electrode which intersects the substrate transfer direction in the discharge vessel. And a specific voltage is applied; and a magnet is arranged near the discharge electrode. As the magnet, the discharge is generated in accordance with the distribution of the charge amount at the processing substrate. The length of the long-side direction is arranged in such a way that the part of the plasma caused by the discharge is strong and the part of the plasma caused by the discharge is weak in relation to the long-side direction of the discharge electrode. Different plural magnets.

In the present invention, it is also effective when the magnet is arranged in such a manner that a discharge is partially generated in relation to the longitudinal direction of the discharge electrode.

In the present invention, it is also effective when the magnet is arranged in such a manner that a discharge is generated at a portion of the discharge electrode corresponding to both edge portions of the processing substrate.

In the present invention, when the long-side direction of the discharge electrode is connected to generate a portion where the plasma caused by the discharge is strong and a portion where the plasma caused by the discharge is weak, the long-side direction This is also effective in the case of the aforementioned plural magnets having different lengths.

In the present invention, it is also effective when the processing substrate is a film-like material.

On the other hand, the present invention is a vacuum processing apparatus, comprising: a vacuum tank; and a processing source arranged in the vacuum tank; and a processing substrate in the vacuum tank through a specific Transport route The substrate is statically moved and processed by the aforementioned processing source. The substrate elimination mechanism of any one of the inventions described above is arranged near the aforementioned transport path.

In the present invention, a guide travel mechanism is provided for guiding and walking while holding the processing substrate in a state of being held by the processing substrate, and using the guide at the discharge electrode corresponding to the processing substrate by the guide. It is also effective in a case where the magnet is arranged in such a manner that a part of the traveling mechanism is held and a discharge is generated so as to generate a discharge.

In the present invention, it is also effective when the processing source is a film-forming source.

In the present invention, it is also effective when the magnet is arranged in such a manner that a discharge is generated at a portion corresponding to the non-film-forming region of the processing substrate.

The substrate static elimination mechanism of the present invention is provided with a linear discharge electrode that is arranged in the discharge container so as to intersect with the substrate transport direction and is applied with a specific voltage; A magnet is arranged in such a manner that the distribution of the charge amount at the film-like processing substrate causes the magnetron discharge to be generated. Therefore, for example, the discharge is enhanced by a large portion of the charge amount of the processing substrate. In an apparatus that performs processing such as film formation on a processing substrate in a vacuum, it is possible to perform static elimination with good efficiency without affecting the processing area.

In particular, in the present invention, since it is connected to the long side of the discharge electrode The direction is used to generate a strong part of the plasma caused by the discharge and a weak part of the plasma caused by the discharge, so that the magnets having different lengths in the longitudinal direction are arranged. The process substrate is statically removed as a whole, and it is also possible to reliably perform static elimination on a portion having a large amount of charge. Therefore, it is possible to optimize the static elimination of the processing substrate.

In addition, according to the present invention, since it is not necessary to increase the strength of the plasma caused by the discharge by more than necessary, it is possible to suppress the electric power applied to the discharge electrode, thereby reducing the discharge. Consumption and power consumption of electrodes.

In the present invention, when the magnet is arranged in such a manner that a discharge is generated partially (for example, at a portion of the discharge electrode corresponding to both edges of the processing substrate) in relation to the longitudinal direction of the discharge electrode, Since the discharge can be generated only for a large portion of the charged amount of the processing substrate, the simplification and efficiency of the static elimination mechanism can be achieved.

On the other hand, the vacuum processing apparatus of the present invention includes: a vacuum tank; and a processing source (for example, a film-forming source) arranged in the vacuum tank; and a film-like processing substrate is mounted in a vacuum The inside of the tank is transported via a specific transport path and processed by the processing source, and the substrate static elimination mechanism of any of the above inventions is arranged near the transport path. Therefore, The present invention can provide, for example, a film forming apparatus capable of performing static elimination with a simple configuration and good efficiency without affecting the film forming area.

In particular, when the system is provided with a guide travel mechanism that guides and guides the processing substrate in a state of holding the processing substrate, and In the case where the magnet is arranged in such a manner that a discharge is generated at a portion of the discharge electrode corresponding to a portion of the processing substrate that is held by the guide travel mechanism, for example, it is not necessary for the magnet to be formed on the film The thin film on the processing substrate is damaged, and the charging of the processing substrate is effectively removed in a film forming apparatus that can be transported stably.

1‧‧‧ roll-up film forming device (vacuum processing device)

2‧‧‧vacuum tank

3‧‧‧Film roll for film formation

4, 4A, 4B‧‧‧Guide walking mechanism

5, 5A, 5B‧‧‧ static elimination mechanism (substrate static elimination mechanism)

6‧‧‧ Winding roller

10‧‧‧Film for film formation (processing substrate)

30‧‧‧discharge gas

50A, 50B‧‧‧ electrode unit

51‧‧‧case (discharge container)

52‧‧‧Introduction electrode

53‧‧‧discharge electrode

54A, 54B‧‧‧Magnet

56‧‧‧DC Power

[Fig. 1] A schematic configuration diagram showing an example of a roll-type film-forming apparatus according to an embodiment of the present invention.

[Fig. 2] (a), (b): Partial cross-sectional views showing an example of the guide travel mechanism in this embodiment.

[Figure 3] is an example of the prior art static elimination mechanism. Figure 3 (a) is a front view showing its internal structure, and Figure 3 (b) is its internal structure. Side view for presentation.

[Fig. 4] It is an example of the static elimination mechanism of this embodiment. Fig. 4 (a) is a front view showing its internal structure. Fig. 4 (b) is its internal view. Make up side view for display.

[Figure 5] (a), (b): Schematic diagrams showing the function of the static elimination mechanism of this example.

[Figure 6] It is a display of other examples of the static elimination mechanism of this embodiment. Figure 6 (a) is a front view showing its internal structure, and Figure 6 (b) is a view of it. The internal structure is shown as a side view.

[Figure 7] (a), (b): For the function of the static elimination mechanism of this example Shown schematic.

[Fig. 8] Shows the important parts of other examples of the static elimination mechanism of this embodiment, and Fig. 8 (a) shows the outline of the internal structure of the film forming film and the electrode unit of the static elimination mechanism. The structure diagram, FIG. 8 (b), is a schematic diagram showing the function of the static elimination mechanism of this example.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic configuration diagram showing an example of a roll-type film-forming apparatus according to an embodiment of the present invention.

In the following, the situation shown in FIG. 1 is taken as an example to explain the relationship between components.

As shown in FIG. 1, generally, the roll-type film-forming apparatus (vacuum processing apparatus) 1 according to this embodiment is provided with a vacuum tank 2 and is provided with a feed and a roll provided at an upper portion of the vacuum tank 2. The winding chamber 2A and the film forming chamber 2B provided at the lower portion inside the vacuum chamber 2.

These feed-out, winding chambers 2A, and film-forming chambers 2B are each connected to a vacuum exhaust system (not shown).

At the upper part of the feed-out and winding chamber 2A, a film-forming film roll 3 to which a film-forming film (process substrate) 10 is wound and attached, and a film-forming film roll 3 are provided. The film-forming material 10 is used as a winding roll 6 for winding.

Film of film-forming film roll 3 in the feeding and winding chamber 2A On the downstream side in the material conveying direction, guide rollers 11 and 12 and a cooling roller 13 are provided.

Here, the cooling roller 13 is provided so as to straddle the feed-out, winding chamber 2A, and film-forming chamber 2B, and in a state where the film-forming film 10 is covered, the The evaporation source (film-forming source) 20 in the membrane chamber 2B is arranged so as to face each other.

In addition, a guide and travel mechanism 4 to be described later is provided near the cooling roller 13 in the feeding and winding room 2A, and a film conveying direction downstream of the guide and travel mechanism 4 is provided at the downstream side. Static elimination mechanism (substrate static elimination mechanism) 5.

Further, a guide roller 14 is provided between the winding roller 6 and the downstream side of the film conveyance direction of the static elimination mechanism 5.

In this configuration, the film-forming film material 10 fed from the film-forming film roll 3 in the feeding and winding chamber 2A is hung on the cooling roller 13 through the above-mentioned guide rollers 11 and 12. After being vapor-deposited in the film-forming chamber 2B by the evaporation source 20, it is borrowed in the feed-out and winding chamber 2A via the guide travel mechanism 4, the static elimination mechanism 5, and the guide roller 14. It is wound by the winding roller 6.

2 (a) and 2 (b) are partial cross-sectional views showing an example of the guide and travel mechanism in this embodiment.

The guide travel mechanism 4 (4A) shown in FIG. 2 (a) is composed of a guide roller 40A and a pressing roller 41.

Here, the guide roller 40A is provided with a roller body 42 having a circular shape in cross section. The roller body 42 is made of, for example, silicone rubber. In addition, the two guide portions 43 having a circular cross-section having a larger outer diameter than the roll body 42 are used so that the edges of the non-film-forming region other than the film-forming region of the film-forming film 10 are both edge portions. The way to be placed, and the space is set at a specific interval.

On the other hand, the pressing roller 41 is formed on a roller body 44 having a circular cross-section and having a rotation axis parallel to the rotation axis of the guide roller 40A. The two guide portions 45 are formed at equal intervals to the guide portions 43 of the guide roller 40A.

Thereafter, the film forming material 10 inserted between the guide roller 40A and the pressing roller 41 is configured to press the pressing roller 41 toward the guide roller 40A by a pressing means (not shown). Therefore, guided walking is performed in a state where both edge portions (that is, non-film-forming regions) of the film-forming film material 10 are sandwiched.

The guide travel mechanism 4 (4B) shown in FIG. 2 (b) is composed of a guide roller 40B and a plurality of pressing mechanisms 46.

Here, the guide roller 40B has a structure that is slightly the same as that of the guide roller 40A shown in FIG. 2 (a), and the outer diameter of the roller body 42 is larger than that of the roller body 42. The three guide portions 43 having a circular shape are vacated so that the central portion and the two edge portions of the non-film-forming region other than the film-forming region of the film-forming film 10 are placed. Set at specific intervals.

On the other hand, the pressing mechanism 46 is mounted on the body portion 49 so as to be capable of rotating parallel to the rotation axis of the guide roller 40B. In this example, the pressing roller 48 that rotates with the shaft 47 as the center is provided with three pressing mechanisms 46 provided at equal intervals to the guide portion 43 of the guide roller 40B.

After that, the film forming material 10 inserted between the guide roller 40B and the pressing mechanism 46 is configured to press the pressing roller 48 toward the guide roller 40B by pressing means (not shown). Thus, the two edge portions and the central portion (that is, the non-film-forming region) of the film-forming film material 10 are sandwiched and guided.

On the other hand, according to the guide walking mechanisms 4A and 4B having the above configuration, the film formation film 10 can be guided and guided stably while the film formation area is protected.

Figures 3 (a) and (b) are examples of the prior art static elimination mechanism. Figure 3 (a) is a front view of its internal structure. Figure 3 (b) is a A side view showing its internal structure.

This static elimination mechanism 105 is a pair type, and is provided with two electrode units 150 having the same configuration in a metal case 151 into which the discharge gas 130 is introduced.

Here, the two electrode units 150 are respectively provided; the linear rod-shaped lead-in electrodes 152 are provided on both sides of the film-forming film 110 and are transported with respect to the film. The paths are arranged so as to be parallel and orthogonal to each other with respect to the film conveyance direction; and the linear and cylindrical discharge electrodes 153 are arranged concentrically with the introduction electrodes 152.

The lead-in electrodes 152 of each electrode unit 150 are arranged in a state where they are electrically connected to the discharge electrodes 153 in the discharge electrodes 153 into which a refrigerant such as water is introduced, and in the surroundings. A plurality of cylindrical magnets 154 made of, for example, a permanent magnet are provided.

The plurality of magnets 154 are provided across the entire area of the film-forming film material 110 in the wide direction of the film, with the shielding plate 155 interposed therebetween, and are configured so that the polarities of the adjacent magnets 154 function as Reverse.

In addition, the lead-in electrode 152 of each electrode unit 150 is applied with a specific voltage between the lead-in electrode 152 side and the grounded case 151 by a DC power source 156. .

In this configuration, if the film-forming film material 110 is transported and formed, and a specific voltage is applied between the static elimination mechanism 105 between the case 151 and the lead-in electrode 152, the electrode unit 150 is covered around the electrode unit 150. The plasma-forming film material 110 has a wide area in a wide area to generate a plasma caused by a magnetron discharge. By causing the plasma to collide with the film-forming film material 110, the film-forming film material 110 The static elimination system is performed.

Figures 4 (a) and (b) are examples of the static elimination mechanism of this embodiment, and Figure 4 (a) is a front view of its internal structure. Figure 4 (b), It is a side view showing the internal structure.

This static elimination mechanism (substrate static elimination mechanism) 5A is a pair of the same type as the above-mentioned prior art example, and is housed in a metal casing (discharge container) 51 into which a discharge gas 30 such as argon is introduced. Set of 2 The electrode unit 50A having the same structure.

Here, the two electrode units 50A are respectively provided; the linear rod-shaped lead-in electrodes 52 are provided on both sides of the film-forming film material 10 and are transported with respect to the film material. The paths are arranged so as to be parallel and orthogonal to each other with respect to the film conveyance direction. The discharge electrodes 53 and the linear and cylindrical discharge electrodes 53 are provided concentrically with the introduction electrodes 52.

The lead-in electrodes 52 of each of the electrode units 50A are arranged in a state where they are electrically connected to the discharge electrodes 53 in the discharge electrodes 53 to which refrigerants such as water are respectively introduced, and are arranged around them. Two cylindrical magnets 54A made of, for example, a permanent magnet are provided.

In this example, a plurality of (in this embodiment, two) magnets 54A are arranged so that a discharge is partially generated in relation to the longitudinal direction of the discharge electrode 53.

Here, as the magnet 54A, an integrated type may be used, or a plurality of small pieces may be used. The two magnets 54A may be those in which the same magnetic circuit is formed, or those in which different magnetic circuits are formed.

These two magnets 54A are vacated with the same interval as the guide 43 of the guide travel mechanism 4A shown in FIG. 2 (a), that is, vacated with the film material 10 for film formation. The widths are set at equal intervals, and the polarities of the adjacent magnets 54A are reversed.

The lead-in electrode 52 of each electrode unit 50A is The current source 56 is applied with a specific voltage to the grounded case 51 so that the lead-in electrode 52 side becomes a negative electrode.

Figures 5 (a) and (b) are schematic diagrams showing the function of the static elimination mechanism of this example.

As shown in FIG. 5 (a), in this example, the two magnets 54A are vacated with the same interval as the guide 43 of the guide travel mechanism 4A, that is, vacated with the film formation. The film material 10 is set at equal intervals.

Therefore, in this example, when a voltage is applied to the lead-in electrode 52 of the electrode unit 50A, as shown in FIG. 5 (b), the plasma 15 is generated only near the two magnets 54A. As a result, only non-film-forming regions on both edges of the film-forming film material 10 are exposed to the plasma 15 and static-eliminated.

Figures 6 (a) and (b) are illustrations showing other examples of the static elimination mechanism of this embodiment, and Figure 6 (a) is a front view showing the internal structure thereof, and Figure 6 (b) Is a side view showing its internal structure. In the following, parts corresponding to the above examples are denoted by the same reference numerals, and detailed descriptions are omitted.

The static elimination mechanism (substrate static elimination mechanism) 5B of this example is one in which two electrode units 50B of the same configuration are provided in the case 51.

The basic structure of the static elimination mechanism 5B is the same as that of the static elimination mechanism 5A described above, and is different from the static elimination mechanism 5A described above only in the number and arrangement position of the magnets 54B.

That is, the static elimination mechanism 5B of this example is attached to the shell described above. The body 51 is provided with two electrode units 50B of the same configuration, and each electrode unit 50B is provided with the lead-in electrode 52 in the above-mentioned discharge electrode 53 and, in the periphery thereof, 3 with A cylindrical magnet 54B made of a permanent magnet.

Here, as the magnet 54B, an integrated type may be used, or a plurality of small pieces may be used. In addition, the three magnets 54B may be those in which the same magnetic circuit is formed, or those in which different magnetic circuits are formed.

These three magnets 54B are provided at the same interval as the adjacent guide portions 43 of the guide travel mechanism 4B shown in FIG. 2 (b), and are provided on the film forming material 10 The central portion and portions corresponding to the two edge portions are configured to invert the polarities of the adjacent magnets 54B.

In addition, the lead-in electrode 52 of each electrode unit 50B is applied with a specific voltage between the lead-through electrode 52 side and the grounded case 51 by a DC power source 56. .

Figures 7 (a) and (b) are schematic diagrams showing the function of the static elimination mechanism of this example.

As shown in FIG. 7 (a), in the case of this example, since the three magnets 54B are vacated with the same intervals as the guide 43 of the guide travel mechanism 4B, Therefore, when a voltage is applied to the lead-in electrode 52 of the electrode unit 50B, as shown in FIG. 7 (b), only three magnets 54B are generated. As a result, the plasma 15 is formed so that only the non-film-forming regions at the central portion and the two edge portions of the film-forming film material 10 are exposed to the plasma 15 and are statically removed.

As described above, in the static elimination mechanisms 5A and 5B of this embodiment, since only the non-film forming region of the film forming film 10 can be removed, the system does not affect the film forming region. In addition, it is possible to perform static elimination with good efficiency, and it is possible to provide a static elimination mechanism 5A, 5B that is simpler in configuration than the prior art shown in FIGS. 3 (a) and (b), for example.

In addition, according to this embodiment, it is not necessary to increase the strength of the plasma caused by the discharge by more than necessary. Therefore, the power applied to the introduction electrode 52 can be suppressed. The consumption amount and power consumption of the introduction electrode 52 and the discharge electrode 53 can be reduced.

Figures 8 (a) and (b) show the important parts of other examples of the static elimination mechanism of this embodiment, and Figure 8 (a) shows the structure of the film material and the electrode unit of the static elimination mechanism The internal structure is shown as a schematic structure diagram, and FIG. 8 (b) is a schematic diagram showing the function of the static elimination mechanism of this example. In the following, parts corresponding to the above examples are denoted by the same reference numerals, and detailed descriptions are omitted.

In the roll-type film-forming apparatus to which the present invention is applied, there is a case where a film is formed on the film-forming film 10 through a mask 10a (see FIG. 8 (a)).

In this case, one of the adjacent masks 10a on the film-forming film 10 The interval region is a film-forming region, and the region on the mask 10a is a non-film-forming region.

When such a mask 10a is used to form a conductive material by vapor deposition, the charge amount of the portion of the mask 10a which is a non-film-formed area becomes higher than that of the film-formed area. Bigger case.

In this case, although the above-mentioned static elimination mechanisms 5A and 5B can also be used to neutralize only the non-film-forming area, in this example, it is configured to perform static elimination using the following general electrode unit 50C.

As shown in FIG. 8 (a), the electrode unit 50C of this example is provided with a plurality of magnets 54C and 54c covering the entire area in the wide direction of the film-forming film 10 and a shielding plate 55 therebetween. .

Here, a plurality of magnets 54C and 54c having different lengths are arranged in relation to the longitudinal direction of the introduction electrode 52 (the discharge electrode 53).

Specifically, at the portion of the introduction electrode 52 corresponding to the mask 10a of the film-forming film material 10, a magnet 54C having a long length is arranged, and at the portion of the introduction electrode 52 corresponding to the film-forming film material 10 A portion of the film formation region is provided with a magnet 54c having a length shorter than that of the magnet 54C. In addition, the adjacent magnets 54C and 54c are configured so that their polarities are reversed from each other.

Here, as the magnets 54C and 54c, an integrated type may be used, or a plurality of small pieces may be used.

If the voltage is applied to the lead-in electrode 52 in this example, as shown in FIG. 8 (b), the strength of the plasma 16 caused by the discharge of the portion where the long magnet 54C is arranged is shown. , Department becomes It is stronger than the strength of the plasma 17 caused by the discharge of the portion where the short magnets 54c are arranged.

Moreover, according to this example having such a structure, since the film forming film 10 can be removed statically as a whole, and the non-film forming region having a large charge amount can be surely removed, Therefore, it is possible to optimize the static elimination of the film-forming film material 10.

As described above, according to this embodiment, it is possible to provide a roll-type film-forming apparatus capable of performing static elimination with good efficiency by a simple configuration.

In addition, the present invention is not limited to the above-mentioned embodiment, and various changes can be made.

For example, in the above-mentioned embodiment, although a pair of substrate static elimination mechanisms have been described as an example, the present invention is not limited to this, but can also be applied to a single substrate static elimination mechanism or It is a two-pair type substrate static elimination mechanism.

Regarding magnets used in magnetron discharge, in addition to permanent magnets, electromagnets can also be used.

Furthermore, the present invention is applicable not only to an apparatus for forming a film by vapor deposition, but also to various vacuum processing apparatuses such as a sputtering apparatus and an etching apparatus.

Furthermore, in the above embodiment, although a series of long film materials have been described as examples of the processing substrate, the present invention is not limited to this, as long as it can be carried in a vacuum For the substrate, for example, it can also be used to cut the film material or flat plate. Applicable to those made of glass.

On the other hand, in the example shown in Figs. 8 (a) and (b), although the strength of the plasma caused by the discharge is different, magnets having different lengths are used. It is also possible to use magnets made of neodymium, which has a strong magnetic force, to vary the strength of the plasma caused by the discharge.

Claims (8)

A substrate static elimination mechanism is a substrate static elimination mechanism that performs static elimination by using a magnetron to discharge a processing substrate transferred in a vacuum. The substrate static elimination mechanism is provided with: a discharge container, which is introduced with a discharge gas; The linear discharge electrodes are arranged in the discharge container so as to intersect with the substrate conveying direction, and a specific voltage is applied. The magnets are arranged near the discharge electrodes. As the magnet, the discharge is generated in accordance with the distribution of the charge amount at the processing substrate, and the plasma-induced strong portion due to the discharge is generated in a direction related to the long side of the discharge electrode and The plurality of magnets having different lengths in the long-side direction are arranged in such a manner that the plasma is a weak part caused by the discharge. According to the substrate static elimination mechanism described in item 1 of the scope of the patent application, the magnet is disposed so that a discharge is partially generated in relation to the longitudinal direction of the discharge electrode. The substrate static elimination mechanism as described in item 1 or 2 of the scope of the patent application, wherein the magnet is arranged in such a manner that a discharge is generated at a portion of the discharge electrode corresponding to the two edge portions of the processing substrate. . The substrate static elimination mechanism according to item 1 or item 2 of the patent application scope, wherein the aforementioned processing substrate is a film material. A vacuum processing device, characterized in that: A vacuum tank; and a processing source, which are arranged in the vacuum chamber; and a processing substrate, which is transported in the vacuum tank via a specific transfer path, and is processed by the processing source; and the substrate is de-energized The mechanism is disposed near the conveying path, and the substrate static electricity removing mechanism is a substrate static electricity removing mechanism for discharging the process substrate in a vacuum by magnetron discharge, and is provided with a discharge container. A discharge gas is introduced; and a linear discharge electrode is arranged in the discharge container so as to intersect with the substrate conveying direction, and a specific voltage is applied; and a magnet is The magnet is arranged near the discharge electrode, and the magnet is caused by the discharge in a manner that the discharge is generated in accordance with the distribution of the charge amount on the processing substrate, and the discharge electrode is caused by the long side direction of the discharge electrode. In a manner that the plasma is a strong part and the plasma is a weak part caused by the discharge, the lengths of the long sides are arranged to have different magnets with different lengths. . The vacuum processing device described in item 5 of the scope of application for a patent, wherein the vacuum processing device is provided with a guide travel mechanism that guides the processing substrate while holding the processing substrate in a state to support the corresponding processing of the discharge electrode. The magnet is arranged in such a manner that a discharge is generated at a portion of the processing substrate where the portion is held by the guide travel mechanism. The vacuum processing device as described in item 5 or item 6 of the patent application scope, wherein the aforementioned processing source is a film-forming source. The vacuum processing apparatus according to item 7 of the scope of the patent application, wherein the magnet is disposed so that a discharge is generated at a portion corresponding to the non-film-forming region of the processing substrate.