JP5889746B2 - Substrate processing apparatus, solid electrolyte membrane forming apparatus, and solid electrolyte membrane forming method - Google Patents

Description

  The technology of the present disclosure relates to a substrate processing apparatus, a solid electrolyte film forming apparatus, and a solid electrolyte film forming method in which a substrate is processed by a substrate conveyed by a conveyance unit facing an electrode.

  As one of substrate processing apparatuses that process a substrate inside a vacuum chamber, a film forming apparatus that forms a thin film on the substrate is known. For example, in the film forming apparatus described in Patent Document 1, a thin film is formed by depositing a film forming material supplied from a film forming source on a substrate.

  In the above-described film formation apparatus, a plurality of correction plates are arranged in a gap between the film formation source and the substrate, and the plurality of correction plates cause a deviation in the distribution of the film formation material supplied from the film formation source to the substrate. Correct for this. Each of the plurality of correction plates improves the film thickness uniformity of the thin film formed on the substrate by suppressing the supply of the film forming material at the portion where the film forming material is biased.

JP 2004-68053 A

  By the way, a sputtering apparatus is used as an example of the above-described substrate processing apparatus in the manufacturing process of the thin film solar cell and the manufacturing process of the display device. In such a sputtering apparatus, a target is used as a film forming source, and the substrate passes through a position facing the target. At this time, in the substrate transported along the transport direction, first, the front end portion of the substrate in the transport direction is disposed at a position facing the target, and then the center portion of the substrate is disposed at the position facing the target. Be placed.

  Therefore, when the space facing the target is set as the facing area, the tip of the substrate enters the facing area from a state where the substrate is not included in the facing area. On the other hand, the central portion of the substrate enters the counter area from a state where a part of the substrate is already included in the counter area. As a result, the state of the facing region when the film forming process is performed on the front end portion of the substrate is different from the state of the facing region when the film forming process is performed on the central portion of the substrate. The results of the film forming process are different between the tip portion and the central portion of the substrate.

  Note that the problem relating to the difference in processing results within the surface of the substrate is not limited to the above-described sputtering apparatus. That is, the above-described problems are common in a substrate processing apparatus in which a substrate passes through a facing region facing an electrode and processing is performed on the substrate.

  The technology of the present disclosure has been made in view of the above-described circumstances, and is capable of improving the uniformity of processing on a substrate, a solid electrolyte membrane forming device, and a solid electrolyte membrane forming device. The purpose is to provide.

  One aspect of the substrate processing apparatus according to the technique of the present disclosure includes an electrode, a placement unit on which the substrate is placed, and the placement unit and the electrode facing the placement unit along the transport direction. And a conveying unit for matching. The placement unit has an end portion that protrudes in the transport direction of the substrate placed on the placement unit, and the length of the electrode in the transport direction is set as an electrode width WP, and the end The length of the part in the transport direction is set as the end width WE, and WE ≧ WP is satisfied.

  One aspect of the apparatus for forming a solid electrolyte membrane in the technology of the present disclosure includes an electrode on which a target including a constituent element of the solid electrolyte is mounted, a mounting portion on which a substrate is mounted, and a device described above along the transport direction. A transport unit that transports the unit and faces the mounting unit and the electrode. The placement unit has an end portion that protrudes in the transport direction of the substrate placed on the placement unit, and the length of the electrode in the transport direction is set as an electrode width WP, and the end The length of the part in the transport direction is set as the end width WE, and WE ≧ WP is satisfied.

  In one aspect of the method for forming a solid electrolyte membrane in the technology of the present disclosure, a transport unit transports a mounting unit on which a substrate is mounted along a transport direction, and a target including a constituent element of the solid electrolyte is mounted. Including a step of facing the electrode and the mounting portion. The placement unit has an end portion that protrudes in the transport direction of the substrate placed on the placement unit, and the length of the electrode in the transport direction is set as an electrode width WP, and the end The length of the part in the transport direction is set as the end width WE, and WE ≧ WP is satisfied.

  According to one aspect of the technology of the present disclosure, when the space facing the electrode is set as the facing region, when the substrate enters the facing region, first, the end portion in the transport direction of the placement unit is set in the facing region. enter in. Next, a front end portion that is an end portion of the substrate in the transport direction enters the facing area, and thereafter, a central portion of the substrate enters the facing area.

  At this time, since the end width WE is equal to or larger than the electrode width WP, when the transport of the substrate is started, the facing area is first occupied by the end of the placement section. Then, from this state, the end portion of the mounting portion is withdrawn from the facing area, while the front end portion of the substrate enters the facing area. Next, the opposing region is occupied by the tip of the substrate, and from this state, the leading end of the substrate exits from the opposing region, while the central portion of the substrate enters the opposing region. As a result, the state of the facing region when processing is started on the edge of the substrate in the transport direction and the state of the facing region when processing is started on the central portion of the substrate are close to each other. Therefore, the difference in processing results between the end portion of the substrate and the central portion of the substrate is suppressed.

  In another aspect of the substrate processing apparatus according to the present disclosure, the electrode further includes a second electrode set as the first electrode and disposed in the transport direction of the first electrode. A gap is formed between the first electrode and the second electrode, and the length of the gap in the transport direction is set as an interelectrode width WB, which satisfies WE ≧ WP + WB.

  In the case where the first electrode and the second electrode are arranged in order along the transport direction, when the substrate passes through the space facing the gap between the first electrode and the second electrode, In many cases, the treatment with one electrode and the treatment with the second electrode overlap. In this regard, according to another aspect of the substrate processing apparatus of the present disclosure, when the transfer of the substrate is started, first, a space facing the electrode and a space facing the gap are at the end of one mounting portion. Occupied by the department. And from this state, while the edge part of a mounting part retreats from these spaces, the front-end | tip part of a board | substrate enters the same space. Next, the space facing the electrode and the space facing the gap are occupied by the tip of the substrate. And from this state, while the front-end | tip part of a board | substrate leaves | separates from these spaces, the center part of a board | substrate enters the same space.

  Therefore, the state of processing in the space facing the gap is close to the state in which processing is performed on the end portion of the substrate and the state in which processing is performed on the central portion of the substrate. As a result, a difference in processing results between the end portion of the substrate and the central portion of the substrate is suppressed.

  In another aspect of the substrate processing apparatus according to the present disclosure, the end portion is set as a tip portion, and the end portion width WE is set as a tip width WEF. Further, the mounting portion has a base end portion that protrudes in a direction opposite to the transport direction of the substrate placed on the placement portion, and the length of the base end portion in the transport direction is the base end. The width WEB is set, and WEB ≧ WP is satisfied. And the said conveyance part conveys the said mounting part along the said conveyance direction, and passes the position which faces the said electrode to the said mounting part.

  According to another aspect of the substrate processing apparatus of the present disclosure, when the substrate is withdrawn from the space facing the electrode, the front end of the substrate is withdrawn from the facing area, which is the space facing the electrode, ahead of the central portion of the substrate. To do. And when the front-end | tip of a board | substrate retreats from an opposing area | region, an opposing area | region is occupied by a part of board | substrate. On the other hand, since the base end width WEB is equal to or larger than the electrode width WP, when the base end of the substrate is withdrawn from the counter region, the counter region is occupied by the base end portion of the mounting portion. As a result, the state of the opposing region when processing is performed on each of both ends of the substrate in the transport direction and the state of the opposing region when processing is performed on the central portion of the substrate are close to each other, Differences in processing results between the both ends of the substrate and the central portion of the substrate can be suppressed.

  In another aspect of the substrate processing apparatus of the present disclosure, the transport unit passes a position facing the electrode through the placement unit along the transport direction, and a position facing the electrode is the transport direction. It passes along the opposite direction to the said mounting part.

  According to another aspect of the substrate processing apparatus of the present disclosure, when the mounting portion reciprocates along the transport direction with respect to the space facing the electrode, the processing between the both end portions of the substrate and the central portion of the substrate is performed. Differences in results are suppressed. Therefore, when the processing is repeated a plurality of times for one substrate, or when different substrates are processed in both the direction opposite to the transport direction and the transport direction, the above-described effect is remarkable. It will be something.

It is a block diagram which shows the whole structure of the formation apparatus of the solid electrolyte membrane in 1st Embodiment of this indication. It is a block diagram which shows the relationship between the width | variety of the conveyance direction in a cathode electrode, and the width | variety of the conveyance direction in a substrate stage in the solid electrolyte membrane formation apparatus in 1st Embodiment. The process figure which shows the process of the process of the formation method of the solid electrolyte membrane in 1st Embodiment. The process figure which shows the process of the process of the formation method of the solid electrolyte membrane in 1st Embodiment. It is a block diagram which shows the whole structure of the formation apparatus of the solid electrolyte membrane in 2nd Embodiment of this indication. It is a block diagram which shows the relationship between the width of the conveyance direction in a cathode electrode, and the width of the conveyance direction in a substrate stage in the solid electrolyte membrane formation apparatus in 2nd Embodiment. Process drawing which shows the process of the process of the formation method of the solid electrolyte membrane in 2nd Embodiment. It is a block diagram which shows the whole structure of the formation apparatus of the solid electrolyte membrane in 3rd Embodiment of this indication. The graph which shows the film thickness distribution of the solid electrolyte membrane formed with the formation apparatus of the solid electrolyte membrane in an Example.

(First embodiment)
A first embodiment in which a solid electrolyte film forming apparatus and a solid electrolyte film forming method, which are examples of a substrate processing apparatus in the present disclosure, are described below with reference to FIGS. 1 to 4. In the first embodiment, an example in which the number of electrodes mounted on the solid electrolyte membrane forming apparatus is one will be described.

  As shown in FIG. 1, the substrate stage 11 is connected to a transport unit 12 that transports the substrate stage 11. The transport unit 12 transports the substrate stage 11 as a placement unit at a constant speed along a transport direction Dtrs that is one direction. Note that, in the mounting surface 11S which is one side surface of the substrate stage 11, a direction orthogonal to the transport direction Dtrs is set as the width direction.

  On the placement surface 11S of the substrate stage 11, a placement portion 11C that is a portion on which the substrate 13 is placed is defined. The substrate 13 is embodied, for example, in a rectangular plate shape that extends along the transport direction Dtrs and the width direction, and the mounting portion 11C is embodied, for example, in a rectangular frame shape along the outer edge of the substrate 13.

  On the placement surface 11S of the substrate stage 11, when the placement portion 11C is partitioned, a portion of the placement portion 11C that is located in the transport direction Dtrs is partitioned as a stage end portion 11E. The stage end portion 11E is a portion that continues from the placement portion 11C in the transport direction Dtrs, and is continuous across the entire width direction of the placement portion 11C. Note that the potential of the mounting portion 11 </ b> C and the potential of the stage end portion 11 </ b> E are set to a floating potential in the same manner as the substrate 13 mounted on the substrate stage 11.

  On the substrate stage 11 side with respect to the transport unit 12, a cathode electrode 17 composed of a backing plate 15 and a target 16 is disposed away from the transport unit 12. The backing plate 15 is larger than the placement portion 11C in the width direction and smaller than the placement portion 11C in the transport direction Dtrs. The backing plate 15 is disposed at a position facing the path through which the substrate stage 11 is transported. The substrate stage 11 that receives the driving force of the transport unit 12 is transported along the transport direction Dtrs to the space facing the backing plate 15.

A target 16 that covers the entire facing surface is bonded to a facing surface that faces one side of the backing plate 15 and faces the transport unit 12. The target 16 includes a constituent element of the solid electrolyte. For example, when the solid electrolyte includes lithium nitride phosphate (LiPON) as a main component, the target 16 includes lithium phosphate (Li ₃ PO ₄ ) as a main component.

  A magnetic circuit 18 is mounted on one side surface of the backing plate 15 opposite to the opposite surface. The magnetic circuit 18 forms a magnetron magnetic field for increasing the plasma density on the surface of the target 16. A plasma power source 19 is connected to the backing plate 15. The plasma power source 19 generates an electric field for generating plasma on the surface of the target 16. When the constituent material of the target 16 is an insulating material, the plasma power source 19 is preferably a high frequency power source. When the constituent material of the target 16 is a conductive material, the plasma power source 19 is a direct current power source. It is preferable that

A pressure adjustment unit 21 is connected to the gap between the transport unit 12 and the cathode electrode 17. The pressure adjustment unit 21 reduces the gap between the transport unit 12 and the cathode electrode 17 to a predetermined pressure suitable for forming the solid electrolyte membrane. A gas supply unit 22 is connected to the gap between the transport unit 12 and the cathode electrode 17. The gas supply unit 22 supplies the gas required for forming the solid electrolyte membrane to the gap between the transport unit 12 and the cathode electrode 17. For example, when the solid electrolyte is mainly composed of LiPON and the target 16 is composed mainly of Li ₃ PO ₄ , the gas supply unit 22 supplies nitrogen gas to the gap between the transport unit 12 and the cathode electrode 17.

Next, the relationship between the width in the transport direction Dtrs at the stage end portion 11E and the width in the transport direction Dtrs at the cathode electrode 17 will be described with reference to FIG.
As shown in FIG. 2, the width in the transport direction Dtrs at the stage end 11E is set as the end width WE. The width of the cathode electrode 17 in the transport direction Dtrs is set as the electrode width WP. The distance between the substrate 13 placed on the substrate stage 11 and the target 16 is set as a distance TS in the normal direction of the substrate 13.

  The end width WE is constant over the entire width direction at the stage end 11E. Further, the electrode width WP is constant in at least a portion of the cathode electrode 17 facing the path where the stage end portion 11E is conveyed, and is preferably constant over the entire width direction of the cathode electrode 17. The end width WE and the electrode width WP satisfy the relationship WE ≧ WP.

  That is, the stage end portion 11E continues from the placement portion 11C in the transport direction Dtrs of the placement portion 11C. The stage end portion 11 </ b> E has a size that occupies the entire portion overlapping the path of the substrate stage 11 in the facing region S that is a space facing the cathode electrode 17. When the substrate stage 11 is transported along the transport direction Dtrs, the facing region S is occupied by the stage end portion 11E prior to the entrance of the substrate 13. The electrode width WP is substantially equal to the distance TS, and the end width WE is not less than the electrode width WP and not less than the distance TS.

  Next, a method for forming a solid electrolyte membrane performed by the solid electrolyte membrane forming apparatus will be described with reference to FIGS. In the following, a mode in which a LiPON film that is an example of a solid electrolyte film is formed will be described.

As shown in FIG. 3, nitrogen gas is supplied from the gas supply unit 22 to the facing region S, and the pressure in the facing region S is adjusted to a predetermined value by the exhaust of the pressure adjusting unit 21. Next, power for generating plasma is supplied from the plasma power source 19 to the cathode electrode 17, and sputtering of the target 16 proceeds by the plasma generated in the vicinity of the cathode electrode 17. Then, Li ₃ PO ₄ released from the target 16 to the facing region S is nitrided by plasma, and LiPON is generated in the facing region S.

  Next, the substrate stage 11 is transported along the transport direction Dtrs. At this time, first, a stage end portion 11E that is an end portion of the substrate stage 11 in the transport direction Dtrs enters the facing region S. Next, the substrate front end portion 13F, which is the end portion of the substrate 13 in the transport direction Dtrs, enters, and then the substrate center portion 13C of the substrate 13 enters the facing region S.

  Here, since the end width WE is equal to or larger than the electrode width WP, the facing region S is first occupied by the stage end 11E, and a LiPON film is formed on the stage end 11E. Then, when the substrate front end portion 13F enters the facing region S from this state, the film formation is gradually ended on the stage end portion 11E, and the formation of the LiPON film on the substrate front end portion 13F is gradually started.

  As shown in FIG. 4, when the substrate stage 11 is further transported along the transport direction Dtrs, the facing region S is occupied by a part of the stage end portion 11E and the substrate front end portion 13F. Then, when the substrate center portion 13C enters the facing region S from this state, the film formation is gradually ended on the substrate front end portion 13F, and the formation of the LiPON film on the substrate center portion 13C is gradually started.

  As a result, plasma is generated in a region sandwiched between the stage end portion 11E and the cathode electrode 17 in the facing region S when film formation is started on the substrate front end portion 13F. Further, in the facing region S when film formation is started on the central portion 13C of the substrate, plasma is generated in a region sandwiched between the front end portion 13F of the substrate and the cathode electrode 17. In other words, in the facing region S when film formation is started on the substrate front end portion 13F, plasma is generated in a region sandwiched between the stage end portion 11E and the cathode electrode 17 covered with the LiPON film. . Further, in the facing region S when film formation is started with respect to the central portion 13C of the substrate, plasma is generated in a region sandwiched between the substrate tip portion 13F and the cathode electrode 17 that is also covered with the LiPON film. Is done. Therefore, both the facing region S when film formation is started on the substrate tip portion 13F and the facing region S when film formation is started on the substrate center portion 13C are both the cathode electrode 17 and the counter region S. Plasma is generated in a region sandwiched between the LiPON films.

  In addition, the step formed by the substrate front end portion 13F and the stage end portion 11E is sufficiently smaller than the distance TS between the substrate 13 and the cathode electrode 17. Therefore, the surface of the LiPON film that covers the stage end portion 11E and the surface of the LiPON film that covers the substrate front end portion 13F are handled as a substantially continuous surface for the transport of particles in the facing region S. As a result, the state of the opposing region S that contributes to the film formation, such as the state of the electric field, the state of the magnetic field, and the state of transport of the particles, On the other hand, they are close to each other when the film formation is started.

  Furthermore, since the potential of the stage end portion 11E and the potential of the substrate front end portion 13F are both floating potentials, the substrate front end portion 13F and the stage end portion 11E are substantially continuous with respect to the formation of the electric field by the cathode electrode 17. Handled. As a result, the properties of the LiPON film formed on the stage end portion 11E and the substrate front end portion 13F are close to each other, and due to a synergistic effect with the above-described configuration, between the substrate front end portion 13F and the substrate center portion 13C. The difference in film formation results is further suppressed.

As described above, according to the first embodiment, the effects listed below can be obtained.
(1) Since the end width WE is equal to or greater than the electrode width WP, the state of the facing region S when the film formation is started on the substrate front end portion 13F and the film formation is started on the substrate center portion 13C. The state of the opposing region S at the time of being close to each other. As a result, a difference in film formation result between the substrate front end portion 13F and the substrate center portion 13C can be suppressed.

  (2) Further, since the step formed by the substrate front end portion 13F and the stage end portion 11E of the substrate 13 is sufficiently smaller than the distance TS between the substrate 13 and the cathode electrode 17, it conforms to the above (1). The effect becomes more remarkable.

(3) Further, since the potential of the stage end 11E and the potential of the substrate 13 are both floating potentials, the effect according to the above (1) becomes more remarkable.
(Second Embodiment)
A second embodiment in which a solid electrolyte film forming apparatus and a solid electrolyte film forming method, which are examples of a substrate processing apparatus according to the present disclosure, will be described below with reference to FIGS. 5 to 7. The second embodiment is different from the first embodiment in the number of electrodes and the end width WE mounted on the solid electrolyte membrane forming apparatus, and the other main configurations are the same as those in the first embodiment. Therefore, in the second embodiment, the configuration different from the first embodiment will be mainly described, and the same configuration as the first embodiment will be denoted by the same reference numerals as the configuration of the first embodiment, and the description thereof will be given. Omitted.

  As shown in FIG. 5, the first cathode electrode 17 </ b> A and the second cathode electrode 17 </ b> B are arranged along the transport direction Dtrs on the substrate stage 11 side with respect to the transport unit 12. The first cathode electrode 17A is composed of a first backing plate 15A and a first target 16A, and the second cathode electrode 17B is composed of a second backing plate 15B and a second target 16B. A first magnetic circuit 18A is mounted on the first cathode electrode 17A, and a first plasma power source 19A is connected thereto. A second magnetic circuit 18B is mounted on the second cathode electrode 17B, and a second plasma power source 19B is connected thereto.

  The first cathode electrode 17A and the second cathode electrode 17B are different in position from each other, but the other configurations are the same as those of the cathode electrode 17 described above. The first magnetic circuit 18A and the second magnetic circuit 18B are different from each other in the formation target of the magnetron magnetic field, but the other configuration is the same as the magnetic circuit 18 described above. The first plasma power source 19A and the second plasma power source 19B are different from each other in the application target of power, but the other configuration is the same as the plasma power source 19 described above.

  Next, the relationship between the width in the transport direction Dtrs at the stage end portion 11E and the width in the transport direction Dtrs in the gap between the two cathode electrodes 17A and 17B will be described with reference to FIG.

  As shown in FIG. 6, the width in the transport direction Dtrs in the gap SE between the two cathode electrodes 17A and 17B is set as the interelectrode width WB. The interelectrode width WB is constant over the entire width direction of the two cathode electrodes 17A and 17B. The end width WE and the interelectrode width WB at the stage end 11E of the substrate stage 11 satisfy the relationship WE ≧ WP + WB. The electrode width WP is substantially equal to the distance TS, and the end width WE is not less than the electrode width WP and not less than the distance TS.

  Here, the space facing the first cathode electrode 17A is set as the first facing region S1, and the space facing the second cathode electrode 17B is set as the second facing region S2, and faces the gap SE between the cathode electrodes 17A and 17B. A space is set as the overlapping region S3. Then, a region obtained by combining the first facing region S1 and the overlapping region S3 is set as the unit facing region SA.

  The stage end portion 11E occupies the entire portion of the unit facing area SA that overlaps the path of the substrate stage 11. When the substrate stage 11 is transported along the transport direction Dtrs, the unit facing area SA is occupied by the stage end 11E prior to the substrate 13 entering.

  Next, a method for forming a solid electrolyte membrane performed by the solid electrolyte membrane forming apparatus will be described with reference to FIG. In the second embodiment, a mode in which a LiPON film which is an example of a solid electrolyte film is formed will be described.

  As shown in FIG. 7, LiPON is generated in each of the first opposing region S1 and the second opposing region S2. Next, when the substrate stage 11 is transported along the transport direction Dtrs, the stage end portion 11E first enters the unit facing area SA, and then the substrate front end portion 13F and the substrate center portion 13C sequentially enter. To do.

  Here, since the end width WE is equal to or larger than the added value of the electrode width WP and the interelectrode width WB, when the transport of the substrate 13 is started, the unit facing area SA is first occupied by the stage end 11E. . Then, when the substrate front end portion 13F enters the first facing region S1 from this state, the formation of the LiPON film on the stage end portion 11E is gradually ended, and the formation of the LiPON film on the substrate front end portion 13F is gradually started. Is done. Next, when the substrate stage 11 is further transported along the transport direction Dtrs, the unit facing area SA is occupied by a part of the stage end portion 11E and the substrate front end portion 13F. Then, when the substrate center portion 13C enters the first facing region S1 from this state, the formation of the LiPON film on the substrate front end portion 13F is gradually ended, and the formation of the LiPON film on the substrate center portion 13C is gradually started. .

  On the other hand, when the two cathode electrodes 17A and 17B are sequentially arranged along the transport direction Dtrs, in the overlapping region S3 facing the gap SE between the cathode electrodes 17A and 17B, the film formation by the first cathode electrode 17A and the second film formation are performed. In many cases, the film formation by the cathode electrode 17B overlaps. In this regard, if the end width WE is equal to or greater than the sum of the electrode width WP and the interelectrode width WB, the substrate front end 13F is unit-opposed from the state where the unit facing area SA is occupied by the stage end 11E. Enter the area SA. Further, from the state where the unit facing area SA is occupied by the substrate front end portion 13F, the substrate central portion 13C enters the unit facing area SA.

  As a result, the film formation by the first cathode electrode 17A and the film formation by the second cathode electrode 17B overlap in the overlapping region S3, while the influence exerted on the substrate tip portion 13F and the substrate center portion 13C is the first counter region. Similar to S1, correction is made in advance by the stage end 11E. Therefore, even when the two cathode electrodes 17A and 17B are arranged along the transport direction Dtrs, the difference in film formation result between the substrate front end portion 13F and the substrate center portion 13C can be suppressed.

As described above, according to the second embodiment, the effects listed below can be obtained.
(4) The state of film formation in the overlapping region S3 facing the gap SE is close to each other when film formation starts on the substrate tip portion 13F and when film formation starts on the substrate center portion 13C. Become. As a result, a difference in film formation result between the substrate front end portion 13F and the substrate center portion 13C can be suppressed.

(5) Each of the first cathode electrode 17A and the second cathode electrode 17B has a common electrode width WP as the width in the transport direction Dtrs. Therefore, the effects according to the above (1) to (4) obtained for the first cathode electrode 17A are also obtained for the second cathode electrode 17B. As a result, the difference in film formation results between the substrate front end portion 13F and the substrate center portion 13C can be further suppressed.
(Third embodiment)
A third embodiment in which an apparatus for forming a solid electrolyte film and a method for forming a solid electrolyte film, which are examples of a substrate processing apparatus according to the present disclosure, are described below with reference to the drawings. The third embodiment is different from the second embodiment in the conveyance direction of the substrate stage 11 and the configuration of both ends of the substrate stage 11 in the conveyance direction, and the other main configurations are the same as those of the first embodiment. Therefore, in the third embodiment, the configuration different from the second embodiment will be mainly described, and the same configuration as the second embodiment will be denoted by the same reference numerals as the configuration of the second embodiment, and the description thereof will be given. Omit.

  As shown in FIG. 8, the substrate stage 11 is connected to a transport unit 32 that transports the substrate stage 11. The substrate stage 11 receives the driving force of the transport unit 32, and at a constant speed along a first transport direction DtrsF that is one direction and a second transport direction DtrsB that is opposite to the first transport direction DtrsF. Be transported. The transport unit 32 passes the substrate stage 11 at a position facing the cathode electrode 17 along the first transport direction DtrsF and the second transport direction DtrsB.

  On the placement surface 11S of the substrate stage 11, the above-described placement portion 11C is partitioned, so that the portion of the placement portion 11C that is positioned in the first transport direction DtrsF is partitioned as the stage tip portion 11EF. Further, a portion of the placement portion 11C located in the second transport direction DtrsB is partitioned as a stage base end portion 11EB.

  The stage distal end portion 11EF and the stage base end portion 11EB are portions that continue from the placement portion 11C, and are continuous throughout the entire width direction of the placement portion 11C. Note that the potential of the stage front end portion 11EF and the potential of the stage base end portion 11EB are set to floating potentials as in the case of the substrate 13 placed on the substrate stage 11.

  The width in the first transport direction DtrsF at the stage front end portion 11EF is set as the front end width WEF, and the width in the second transport direction DtrsB at the stage base end portion 11EB is set as the base end width WEB. The front end width WEF is constant over the entire width direction of the stage front end portion 11EF, and the base end width WEB is constant over the entire width direction of the stage base end portion 11EB. The distal end width WEF and the proximal end width WEB satisfy the relationship of WEF ≧ WP + WB and WEB ≧ WP + WB.

  That is, in the first transport direction DtrsF of the placement portion 11C, the stage front end portion 11EF is continuous from the placement portion 11C, and the stage front end portion 11EF is a portion of the unit facing area SA that overlaps the path of the substrate stage 11. It is the size which occupies the whole. Further, in the second transport direction DtrsB of the placement portion 11C, the stage base end portion 11EB continues from the placement portion 11C, and the stage base end portion 11EB overlaps the path of the substrate stage 11 in the unit facing area SA. It is the size which occupies the whole part.

  Then, when the substrate stage 11 is transported along the first transport direction DtrsF, the unit facing area SA is occupied by the stage tip portion 11EF prior to the entry of the substrate 13. Further, when the substrate stage 11 that has passed through the unit facing area SA is transported along the second transport direction DtrsB, the unit facing area SA is occupied by the stage base end portion 11EB before the substrate 13 enters again. It is done.

  Next, a method for forming a solid electrolyte membrane performed by the solid electrolyte membrane forming apparatus will be described. In the third embodiment, a mode in which a LiPON film that is an example of a solid electrolyte film is formed will be described.

  First, as in the second embodiment, LiPON is generated in a region facing each of the cathode electrodes 17A and 17B. Next, the substrate stage 11 is transported along the first transport direction DtrsF with respect to the unit facing area SA. At this time, the stage front end portion 11EF of the substrate stage 11 first enters the unit facing area SA, and then the substrate front end section 13F, the substrate center section 13C, and the substrate base end section 13B sequentially enter the facing area S. Finally, the stage base end portion 11EB of the substrate stage 11 enters.

  Next, when the substrate stage 11 passes through the unit facing area SA, the substrate stage 11 is transported along the second transport direction DtrsB with respect to the unit facing area SA. At this time, the stage base end portion 11EB of the substrate stage 11 first enters the unit facing region SA, and then the substrate base end portion 13B, the substrate center portion 13C, and the substrate front end portion 13F are sequentially arranged in the unit facing region. The SA enters the SA, and finally the stage tip 11EF of the substrate stage 11 enters.

  Here, the tip width WEF is not less than the sum of the electrode width WP and the interelectrode width WB. Therefore, when the substrate stage 11 is transported along the first transport direction DtrsF, the unit facing area SA is first occupied by the stage front end portion 11EF. When the substrate front end portion 13F enters the unit facing area SA from this state, film formation is gradually ended on the stage front end portion 11EF, and film formation is gradually started on the substrate front end portion 13F. Subsequently, when the substrate stage 11 is further transported along the first transport direction DtrsF, the unit facing area SA is occupied by a part of the stage front end portion 11EF and the substrate front end portion 13F. Then, from this state, when the substrate center portion 13C enters the unit facing area SA, film formation is gradually ended on the substrate front end portion 13F, and film formation is gradually started on the substrate center portion 13C.

  On the other hand, when the substrate stage 11 is transported along the second transport direction DtrsB, the unit facing area SA is first occupied by the stage base end portion 11EB. Then, when the substrate base end portion 13B enters the unit facing area SA from this state, the film formation on the stage base end portion 11EB is gradually ended, and the film formation on the substrate base end portion 13B starts gradually. . Subsequently, when the substrate stage 11 is further transported along the second transport direction DtrsB, the unit facing area SA is occupied by the substrate base end portion 13B. Then, from this state, when the substrate center portion 13C enters the unit facing area SA, film formation is gradually ended on the substrate base end portion 13B, and film formation is gradually started on the substrate center portion 13C.

  As a result, in the unit facing area SA when film formation starts from the substrate front end portion 13F, plasma is generated in a region sandwiched between the stage front end portion 11EF and the cathode electrode 17. Further, in the unit facing region SA when film formation starts from the substrate base end portion 13B, plasma is generated in a region sandwiched between the stage base end portion 11EB and the cathode electrode 17. In the unit facing region SA when film formation starts on the substrate center portion 13C, the region is sandwiched between the substrate distal end portion 13F and the cathode electrode 17 or between the substrate base end portion 13B and the cathode electrode 17. Plasma is generated in the region. Therefore, the state of the opposing region S that contributes to film formation, such as the state of the electric field, the state of the magnetic field, and the state of transport of particles, is determined when the film formation starts from the substrate front end portion 13F and from the substrate base end portion 13B. It is close to each other when it starts and when film formation starts on the central portion 13C of the substrate.

As described above, according to the third embodiment, the effects listed below can be obtained.
(6) Since the state of the unit facing area SA when the film formation starts from the end of the substrate 13 and the state of the unit facing area SA when the film formation starts with respect to the central part 13C of the substrate 13 are close. The difference in the film formation result between the edge portion of the substrate and the central portion 13C of the substrate is suppressed.

  (7) In the case where the conveyance along the first conveyance direction DtrsF and the conveyance along the second conveyance direction DtrsB are repeated a plurality of times for one substrate 13, the above (1) to (6) are applied. The effect is remarkable.

(8) When transport along the first transport direction DtrsF and transport along the second transport direction DtrsB are performed on different substrates 13, the substrate 13 transported along any direction Also, the effects according to the above (1) to (5) are obtained.
(Example)
The film thickness uniformity of the LiPON film obtained by the method for forming a solid electrolyte film described in the fourth embodiment will be described below with reference to FIG.

Four glass substrates having a length in the transport direction of 380 mm, a length in the width direction of 380 mm, and a thickness of 0.7 mm are arranged in a matrix on the mounting surface 11S, and the following film formation conditions are used. A LiPON film was obtained. Further, a LiPON film of a comparative example was obtained by setting the end width WE to 0 mm and setting the other film forming conditions to the same conditions as in the example.
・ Target: Li ₃ PO ₄
-Electrode width WP: 110 mm
-Interelectrode width WB: 30 mm
・ Supply power: 3.0kW (13.56MHz)
・ Process gas: Nitrogen gas ・ Process gas flow rate: 50 sccm
・ Process pressure: 0.25 Pa
・ Distance TS: 120mm
-Tip width WEF: 250 mm (> 110 mm + 30 mm)
・ Base end width WEB: 250 mm (> 110 mm + 30 mm)
As shown in FIG. 9, the film thickness of the LiPON film of the example is 3850 nm or more and 3950 nm or less in the transport direction, and the center portion in the transport direction and the end portion in the transport direction. No deviation in the film thickness distribution was observed. On the other hand, the film thickness of the LiPON film of the comparative example is 3800 nm or more and 4030 nm or less in the transport direction, and has a large variation compared to the examples, and the film thickness is at the center of the film formation target in the transport direction. The distribution was biased such that the film thickness was thin and the film thickness was thick at the end of the film formation target in the transport direction. As a result, it was recognized that the unevenness of the film thickness distribution in the transport direction can be reduced by providing the stage end described in the film forming conditions.

In addition, each said embodiment can also be changed and implemented as follows.
-In the substrate processing apparatus of each embodiment, the number of the electrodes arranged along a conveyance direction may be three or more.

-The electrode mounted in a substrate processing apparatus may be a counter electrode which mutually opposes across the path | route in which a mounting part is conveyed.
In the first embodiment and the second embodiment, the transport unit may transport the placement unit in both directions opposite to the transport direction Dtrs and the transport direction Dtrs.

  In the second embodiment, when the interelectrode width WB is larger than the electrode width WP, the end width WE may be smaller than the added value of the electrode width WP and the interelectrode width WB. That is, in the case where the processing range of each of the electrodes arranged along the transport direction is separately determined on the transport path of the substrate 13, a configuration in which WP + WB> WE ≧ WP may be satisfied. . With such a configuration, it is possible to suppress the stage end portion 11E from becoming unnecessarily large.

  -In 3rd Embodiment, the front-end | tip width WEF should just be more than the electrode width WP, and the base end width | variety WEB should just be more than the electrode width WP. That is, any configuration that satisfies WE ≧ WP may be used, and any configuration that satisfies WEB ≧ WP may be used.

-In 3rd Embodiment, either one of the stage front-end | tip part 11EF and the stage base end part 11EB may be omitted.
The stage end portion 11E is not limited to the configuration formed in the entire width direction of the placement portion 11C, and may be configured to be formed only in a part of the placement portion 11C in the width direction. Even with such a configuration, it is possible to obtain the effects according to the above (1) to (4) in the vicinity of the stage end portion 11E of the substrate 13. Similarly, the stage distal end portion 11EF and the stage base end portion 11EB may be formed only on a part of the mounting portion 11C in the width direction.

The potential of the stage end portion 11E is not limited to the floating potential, and may be a ground potential or a potential different from that of the substrate 13, for example.
The substrate processing apparatus is not limited to a solid electrolyte film forming apparatus, and may be a metal film forming apparatus that forms a metal film using a metal target, for example. The substrate processing apparatus may be a CVD apparatus or an etching apparatus that forms a film by advancing a chemical reaction in a gas phase. In short, the substrate mounted on the mounting portion is transported to a position facing the electrode. Any device can be used as long as the substrate is processed.

  S ... opposing region, S1 ... first opposing region, S2 ... second opposing region, S3 ... overlapping region, SA ... unit opposing region, SE ... gap, TS ... distance, WB ... interelectrode width, WE ... end width, WP ... electrode width, WEB ... base end width, WEF ... tip width, Dtrs ... transport direction, DtrsB ... second transport direction, DtrsF ... first transport direction, 11 ... substrate stage, 11C ... mounting portion, 11E ... stage end 11EF ... Stage tip, 11S ... Placement surface, 11EB ... Stage base end, 12, 32 ... Transport section, 13 ... Substrate, 13B ... Substrate base, 13C ... Substrate center, 13F ... Substrate tip 15 ... backing plate, 15A ... first backing plate, 15B ... second backing plate, 16 ... target, 16A ... first target, 16B ... second target, 17 ... cathode electrode, 17A ... first DESCRIPTION OF SYMBOLS 1 cathode electrode, 17B ... 2nd cathode electrode, 18 ... Magnetic circuit, 18A ... 1st magnetic circuit, 18B ... 2nd magnetic circuit, 19 ... Plasma power supply, 19A ... 1st plasma power supply, 19B ... 2nd plasma power supply, 21 ... pressure adjusting part, 22 ... gas supply part.

Claims (6)

Electrodes,
A placement section on which the substrate is placed;
A transport unit that transports the mounting unit along the transport direction and faces the mounting unit and the electrode;
The placement unit has an end protruding in the transport direction of the substrate placed on the placement unit,
The length of the electrode in the transport direction is set as the electrode width WP,
The length in the transport direction at the end is set as the end width WE,
A substrate processing apparatus that satisfies WE ≧ WP. The electrode is set as the first electrode;
A second electrode disposed in the transport direction of the first electrode;
A gap is formed between the first electrode and the second electrode,
The length in the transport direction in the gap is set as the interelectrode width WB,
The substrate processing apparatus according to claim 1, wherein WE ≧ WP + WB is satisfied. The end is set as the tip,
The end width WE is set as a tip width WEF,
The mounting portion has a base end portion that protrudes in a direction opposite to the transport direction of the substrate placed on the placement portion,
The length in the transport direction at the base end portion is set as a base end width WEB,
WEB ≧ WP is satisfied,
The substrate processing apparatus according to claim 1, wherein the transport unit transports the placement unit along the transport direction to pass a position facing the electrode through the placement unit. The transport unit is
Passing the position facing the electrode along the transport direction to the placement unit, and
The substrate processing apparatus according to claim 3, wherein a position facing the electrode is passed through the placement unit along a direction opposite to the transport direction. An electrode on which a target containing a constituent element of a solid electrolyte is mounted;
A placement section on which the substrate is placed;
A transport unit that transports the mounting unit along the transport direction and faces the mounting unit and the electrode;
The placement unit has an end protruding in the transport direction of the substrate placed on the placement unit,
The length of the electrode in the transport direction is set as the electrode width WP,
The length in the transport direction at the end is set as the end width WE,
A device for forming a solid electrolyte membrane satisfying WE ≧ WP. The transport unit transports the mounting unit on which the substrate is mounted along the transport direction, and includes a step in which the electrode on which the target including the constituent element of the solid electrolyte is mounted and the mounting unit face each other,
The placement unit has an end protruding in the transport direction of the substrate placed on the placement unit,
The length of the electrode in the transport direction is set as the electrode width WP,
The length in the transport direction at the end is set as the end width WE,
A method of forming a solid electrolyte membrane satisfying WE ≧ WP.

Images