JP2011236475A - Processing object holding device and film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing object holding device that suppresses thermal stress to a substrate by a conveying type double-sided sputtering apparatus and is used for the conveying type double-sided sputtering apparatus that does not degrade substrate quality, namely the so-called substrate holder.SOLUTION: The processing object holding device used for the conveying type double-sided sputtering apparatus includes a first shielding plate and second shielding plate that have a plurality of openings and are arranged facedly, and a holding member that faces the first shielding plate and second shielding plate, is sandwiched and arranged between the first shielding plate and second shielding plate, and has a holding section that holds the processing object and has an opening for opening a processing surface. The holding member includes a first processing position where the first shielding plate and second shielding plate are held relatively movably and the holding section of the holding member and the opening of the first shielding plate overlap each other in the plane view and a second processing position where the holding member moves relatively to the first and second shielding plates and the holding section of the holding member and the opening of the second shielding plate overlap each other in the plane view.

Description

  The present invention relates to an object holding apparatus and a film forming method used in a transport type double-side sputtering apparatus.

  As a method for forming a metal thin film on a substrate, film formation by sputtering is widely used. In recent years, substrates that form thin films on both front and back surfaces have increased, and double-sided sputtering devices, in particular, transport-type double-sided sputtering devices, are widely used as the forming devices. For example, “Double-sided sputtering devices (SYSTEM series: manufactured by Shibaura Mechatronics Co., Ltd.) Are commercially available. As shown in the conceptual diagram of FIG. 1, a conventional transport type double-side sputtering apparatus 10 is installed in a processing region 1 a of a vacuum chamber 1 with a substrate holder 6 holding a substrate 7. The substrate holder 6 is movably installed in the processing area 1a. After the substrate 7 is stored in the processing region 1a, the air in the processing region 1a is exhausted from the vacuum exhaust port 1b, and an inert gas is introduced from the gas introduction pipe 1c to make an inert gas atmosphere.

  Next, a high voltage is applied to the sputtering target 5 as a film forming material by the high frequency power source 2, the matching circuit 3, and the sputtering cathode electrode 4, and the material of the sputtering target 5 ionized by an inert gas is applied to the substrate 7. Deposit on the surface and form a film. The transport type double-sided sputtering apparatus 10 is provided with two sets of sputtering target 5, high-frequency power source 2, matching circuit 3, and sputtering cathode electrode 4 so that the film can be formed simultaneously on both the front and back surfaces of the substrate 7. Further, there is disclosed a technique in which a substrate holder 6 is moved in a processing region 1a to sequentially feed a plurality of substrates 7 and improve productivity of double-sided film formation (Patent Document 1).

Japanese Patent Laid-Open No. 3-122274

  However, in the above-described Patent Document 1, thermal stress generated on the sputtering target from both sides is applied to the substrate. In particular, when the film is formed on the quartz substrate due to the thermal stress, there is a problem that a portion called a twin crystal where the crystal direction is changed is generated, and a predetermined performance cannot be obtained.

  Therefore, even if sputtering film formation is performed on both sides of the substrate using a transfer type double-sided sputtering device, the material to be used in the transfer type double-sided sputtering device that maintains high productivity and suppresses thermal stress and does not degrade the substrate quality. Provided are a holding device, a so-called substrate holder, and a film forming method using the substrate holder.

  The present invention can be realized as the following forms or application examples so as to solve at least one of the above-described problems.

[Application Example 1] A workpiece holding device according to this application example is a workpiece holding device housed in a processing region of a transport type double-side sputtering apparatus that forms both surfaces of a workpiece in one step. The first shielding plate and the second shielding plate having a plurality of openings, facing each other, the first shielding plate and the second shielding plate, the first shielding plate and the second shielding plate, And a holding member having a holding portion having an opening for holding the object to be processed and opening the processing surface. The holding member is relatively relative to the first shielding plate and the second shielding plate. Is held movably
A first processing position where the holding portion of the holding member and the opening of the first shielding plate overlap in plan view, and the holding member moves relative to the first and second shielding plates; And a second processing position where the holding portion of the holding member and the opening of the second shielding plate overlap in plan view.

  According to the application example described above, it is possible to form a film on each side in one processing step (from storage to removal of the processing object), and to greatly reduce the thermal stress on the processing object (substrate). . Accordingly, since the output of the sputtering apparatus during single-sided film formation can be increased, high productivity by simultaneous double-sided sputtering can be maintained.

  Application Example 2 In the application example described above, the first shielding plate and the second shielding plate are fixed to a movable table provided in the processing region of the transport type double-side sputtering apparatus. And

  According to the application example described above, one surface of the substrate can be sequentially formed by sputtering by moving the movable table.

  Application Example 3 In the application example described above, the first shielding plate and the second shielding plate are integrally formed.

  According to the application example described above, it is possible to prevent the composition ions of the sputtering target from wrapping around from a portion other than the opening, and thus it is possible to suppress the unnecessary composition from adhering to the film.

  [Application Example 4] A film forming method in this application example is a film forming method in which both surfaces of an object to be processed are formed in one process by a transport type double-side sputtering apparatus, and the object to be processed in the above application example is held. The apparatus holds an object to be processed on the holding member, is installed in a processing region of the transport type double-sided sputtering apparatus, fixes the holding member to the first processing position, and A first processing step of forming a film on a surface corresponding to the opening of the first shielding plate and the second shielding plate; and the first shielding plate of the object to be processed by moving the holding portion to the second processing position. And a second processing step of forming a film on a surface corresponding to the opening of the second shielding plate.

  According to the application example described above, it is possible to form a film on each side in one processing step (from storage to removal of the processing object), and to greatly reduce the thermal stress on the processing object (substrate). . Accordingly, since the output of the sputtering apparatus during single-sided film formation can be increased, high productivity by simultaneous double-sided sputtering can be maintained.

  Application Example 5 In the application example described above, the film formed by the first processing step and the film formed by the second processing step are the same or different.

  According to the application example described above, since the processing conditions corresponding to the material of the sputtering target can be loaded on each sputtering target, various film formations are possible during one reciprocation of the movable table.

The conceptual diagram of a conveyance type double-sided sputtering apparatus. FIG. 2 is a schematic plan sectional view according to the first embodiment. FIG. 3 is a schematic cross-sectional view showing a cross section A-A ′ of FIG. 2. The board | substrate holding | maintenance part which concerns on 1st Embodiment (a) sectional drawing, and (b) top view. The arrow line view from the arrow P direction of FIG. The flowchart which concerns on 2nd implementation mobile phone. The flowchart which shows the detail of the 1st and 2nd process process which concerns on 2nd Embodiment. FIG. 6 is a schematic cross-sectional view in the plane direction for explaining a manufacturing process according to the second embodiment. FIG. 6 is a schematic cross-sectional view in the plane direction for explaining a manufacturing process according to the second embodiment.

  Embodiments according to the present invention will be described below with reference to the drawings.

(First embodiment)
FIG. 2 is a plan view conceptually showing the configuration inside the processing region of the transport type double-side sputtering apparatus that houses the workpiece holding device according to the present embodiment. The transport type double-sided sputtering apparatus 100 includes a processing chamber 10 and a movable table 20 that is movably installed inside the processing chamber 10. Further, the processing chamber 10 includes an exhaust part 10a for exhausting the internal air, and a gas introduction part 10b for introducing an inert gas such as argon or nitrogen into the processing chamber 10 from which the air has been exhausted. .

  On the movable table 20, a workpiece holding device 40 (hereinafter referred to as a substrate holder 40) having a holding unit (not shown) that fixes and holds a substrate 30 as a workpiece is movably installed. Examples of the substrate 30 include a quartz substrate, a silicon substrate, and a glass substrate. Further, a first shielding plate 50a and a second shielding plate 50b are provided opposite to each other on both sides of the substrate holder 40, and the movable table 20 is provided on the movable base 20 as shown in FIG. 3 showing a section of the AA ′ portion shown in FIG. On the other hand, the shielding member 50 is fixed by a screw or the like (not shown).

  The movable table 20 described above is placed on the movable portion 10 c provided inside the processing chamber 10, and the substrate holder 40 is placed on the movable portion 20 a provided on the movable table 20. Thereby, the movable base 20 and the substrate holder 40 can move in the left-right direction in the illustration of FIG. 2 relative to the processing chamber 10. Further, the shielding member 50 is preferably formed so as to cover the substrate holder 40 so as to prevent unnecessary sputtering of the sputtering target material. Moreover, although the 1st shielding board 50a and the 2nd shielding board 50b were formed integrally and it was set as the shielding member 50, it is good also as a different body.

  The processing chamber 10 is provided with a sputtering cathode electrode 60 holding a sputtering target 70 which is a coating material so as to sandwich the shielding member 50 on which the substrate holder 40 is disposed. Devices such as a power supply device and a control device (not shown) are connected to the sputtering cathode electrode 60. The sputtering target 70 held by the plasma generated by the sputtering cathode electrode 60 is ionized, the inert gas molecules introduced into the processing chamber 10 collide therewith, and the ions of the sputtering target 70 are ejected. Then, it reaches the surface of the substrate 30 held by the substrate holder 40 and deposits to form a film.

  For example, a holding member 40a configured as shown in FIG. 4 is detachably fixed to the substrate holder 40 with screws or the like, and a holding portion 40b that holds the substrate 30 between the substrate holder 40 and the holding member 40a is fixed to the substrate holder 40. It is provided corresponding to the number of substrates.

  The first shielding plate 50a and the second shielding plate 50b of the shielding member 50 are provided with a plurality of openings 50c, 50d, 50e, and 50fg. The openings 50c, 50d, 50e, 50f, and 50g are provided so as to open one surface of the substrate 30 as shown in FIG. 5, and the substrate 30a held from one end side of the substrate holder 40 is provided. , 30b, 30c, 30d are opened alternately.

  In the present embodiment, the openings 50c and 50d of the first shielding plate 50a open one surface of the substrates 30b and 30d, and the openings 50e and 50f of the second shielding plate 50b open one surface of the substrates 30a and 30c. . In other words, the opposite surfaces of the substrates 30a and 30c and the substrates 30b and 30d are open. When the substrate holder 40 is moved so that the substrate 30a is positioned at the opening 50c, the substrate 30b is positioned at the opening 50f, the substrate 30c is positioned at the opening 50d, and the substrate 30d is positioned at the opening 50g. As described above, the position of the shielded substrate 30 in FIG. 5 is set as a surface to be opened.

  As a general method for setting the position in this manner, as shown in FIG. 5, the distances m1, m2, and m3 of the substrates 30a, 30b, 30c, and 30d and the shielding plates 50a and 50b as viewed in the direction of the arrow P are shown. This can be easily realized by matching the distances n1, n2, n3, and n4 with adjacent openings in a plan view.

  Further, the opening end sides 51 and 52 in the arrangement direction of the openings are disposed so as to be between the arrangement directions of the substrate holding portions 40b. For example, when the substrate 30b is sputtered from the opening 50c to be opened, Unnecessary sputtering material is prevented from adhering to the shielded substrate surface of the substrate 30c. Therefore, the opening end sides 51 and 52 are adjacent to each other because it is necessary to set the openings 30 and 52 apart from the substrate 30 while keeping a wide opening with respect to the substrate 30 to be opened. It is preferable to set so that the positions of the opening end sides 51 and 52 come to the center position of the substrate 30.

(Second Embodiment)
As the second embodiment, a method of forming a film by the transport type double-sided sputtering apparatus 100 using the substrate holder (processing object holding apparatus) 40 of the first embodiment described above will be described. FIG. 6 is a flowchart showing steps of the present embodiment, and FIG. 7 is a flowchart showing detailed steps of the first processing step (S101) or the second processing step (S102) in FIG.

[First treatment process]
Prior to the first processing step (S101), as a preparation, the substrate 30 to be processed is washed and dried and mounted on the holding portion 40b of the substrate holder 40. The substrate holder 40 on which the substrate 30 is mounted is placed on the movable table 20 provided in the processing region inside the processing chamber 10. At this time, the shielding member 50 may be fixed to the movable table 20 in advance, or may be fixed to the movable table 20 when the substrate holder 40 is installed.

  In the first processing step (S101), as shown in FIG. 8A, the position of the movable base 20 is adjusted and set to the processing start position. The processing start position is a state in which the movable base 20 is located in the processing region of the processing chamber 10 in the movable direction of the movable base 20 indicated by an arrow Q in FIG. The state where there is. At this time, the shielding member 50 is installed on the movable base 20 so that the opening 50e of the first shielding plate 50a of the shielding member 50 is located at a position facing the sputtering cathode electrode 60 provided with the sputtering target 70.

  The substrate holder 40 is placed at a position where the substrate 30a corresponds to the opening 50e of the first shielding plate 50a, and the first processing position is set. At this time, the 2nd shielding board 50b becomes a position which shields the board | substrate 30a. When the substrate holder 40 is at the first processing position and the movable stage 20 is at the processing start position, the air inside the processing chamber 10 is exhausted from the exhaust part 10a, and after exhausting, Ar, which is an inert gas, from the gas introduction part 10b. Is introduced into the processing chamber, and the first processing step (S101) is started.

  The first processing step (S101) includes the steps shown in FIG. First, at the processing start position described above, the sputtering cathode electrode 60 is powered on the sputtering target 70 via a power supply device, a control device, etc. (not shown), and sputtering is performed on the substrate 30a at the processing start position. (S201). At this time, as shown in FIG. 8 (a), the substrate 30a is sputtered on the surface side opened by the opening 50e of the second shielding plate 50b, but the substrate surface on the first shielding plate 50a side is shielded and sputtered. First, the substrate 30a is formed on only one side.

  When the above-described substrate sputtering (S201) is completed, it is determined whether or not there is an unprocessed substrate on which a film is continuously formed (S202). Next, it is determined that there is a substrate 30b to be deposited, and the process proceeds to sputtering. Therefore, as shown in FIG. 8B, the movable base 20 is positioned at a position where the next substrate 30b faces the cathode electrode 60 for sputtering. The movable base 20 moves from the position B in FIG. 8A to the position C in FIG. 8B until it comes (S203). The amount of movement from the B position to the C position corresponds to the opening interval n1 of the shielding plates 50a and 50b shown in FIG. 5, and after the movement of the movable base 20 to the C position is completed, the above-described substrate sputtering (S201) is executed. To do.

  The above-described substrate sputtering (S201), determination of presence / absence of an unprocessed substrate (S202), and movement of the movable base 20 (S203) are repeated up to the substrate 30d. In the determination of presence / absence of an unprocessed substrate (S202), it is determined that there is no unprocessed substrate. At this time, it is determined whether this repeated processing step is the first processing step (S101) (S204). When it is determined in S204 that the process is the first processing step (S101), the process proceeds to the next operation.

  The movable table 20 is moved until it reaches the state shown in FIG. 8C, which is the position where the next second processing step (S102) starts. That is, the movable base 20 is moved to the D position which is the left end of the figure display in the processing region in the processing chamber 10. At this time, the opening 50g provided at the right end of the shielding plate 50b in the figure is a position facing the sputtering cathode electrode 60.

  Next, as shown in FIG. 9D, the substrate holder 40 is moved from the E position to the F position so that the substrate 30d comes to a position corresponding to the opening 50g of the second shielding plate 50b. This state becomes the start position of the second processing step (S102), and plasma processing is started. Similarly to the first processing step (S101), the second processing step (S102) is configured by the steps shown in FIG. 7, and the movable base 20 is moved in the direction of arrow R in FIG. Next, as shown in FIG. 9 (e), sequentially from sputtering to the substrate 30c, as shown in FIG. 9 (f), only one surface corresponding to the openings of the shielding plates 50a and 50b is formed by sputtering up to the substrate 30a.

  When it is determined in S204 that the first processing step (S101) is not the first processing step (S101), that is, the second processing step (S102), the film forming step is completed, and the processing chamber is finished. The inside of 10 is brought to atmospheric pressure, and the substrate holder 40 holding the substrate 30 is taken out and completed.

  As described above, in the film forming method of the present embodiment, first, in the first processing step (S101), the substrates 30a and 30c are the surfaces on the second shielding plate 50b side, and the substrates 30b and 30d are the surfaces on the first shielding plate 50a side. In the second processing step (S102), the opposite surface is formed and the substrate 30 on which both surfaces are formed can be obtained.

  As described above, even if the film is formed on each side, the thermal stress applied to the substrate is greatly reduced by forming the substrate on which both surfaces are formed in one batch processing. For example, when quartz is used for the substrate And the like do not generate twins, and stable vibration characteristics and high reliability can be realized even when used as a vibrating piece.

  For example, when Au is deposited on both sides of a quartz substrate by the conventional double-sided sputtering apparatus 10 as shown in FIG. 1, DC 100 W is applied to the sputtering target and the substrate transport speed is set to 30 mm / min. It was set and the film was formed on both sides simultaneously. Twins were generated at electric power exceeding this condition or at high transport speeds. However, when the transfer type double-sided sputtering apparatus 100 according to the embodiment of the present invention shown in FIG. 2 is used, even if the power of DC 1000 W is applied and the film is formed at a substrate transfer speed of 350 mm / min, twins are not generated. High productivity was achieved.

  DESCRIPTION OF SYMBOLS 10 ... Processing chamber, 20 ... Movable stand, 30 ... Substrate, 40 ... To-be-processed object holding device (substrate holder), 50 ... Shielding member, 60 ... Sputtering cathode electrode, 70 ... Sputtering target, 100 ... Conveyance type double-sided sputtering apparatus.

Claims (5)

A processing object holding device accommodated in a processing region of a transport type double-sided sputtering apparatus for forming both surfaces of a processing object in one step,
A first shielding plate and a second shielding plate, each having a plurality of openings and arranged opposite to each other;
Opposite to the first shielding plate and the second shielding plate, disposed between the first shielding plate and the second shielding plate, and having an opening for holding the object to be processed and opening the processing surface. A holding member provided with a holding portion, and the holding member is held movably relative to the first shielding plate and the second shielding plate,
A first processing position where the holding portion of the holding member and the opening of the first shielding plate overlap in plan view;
A second processing position in which the holding member moves relative to the first and second shielding plates, and the holding portion of the holding member and the opening of the second shielding plate overlap in plan view; Comprising
A processing object holding device. The first shielding plate and the second shielding plate are fixed to a movable table provided in the processing region of the transport type double-sided sputtering apparatus,
The processing object holding device according to claim 1, wherein   The workpiece holding apparatus according to claim 1, wherein the first shielding plate and the second shielding plate are integrally formed. A film forming method for forming both surfaces of an object to be processed in one process by a transport type double-side sputtering apparatus,
The object to be processed holding device according to any one of claims 1 to 3, wherein the object to be processed is held by the holding member, and is installed in a processing region of the transport type double-sided sputtering apparatus,
A first treatment step of fixing the holding member at the first treatment position and forming a film on a surface corresponding to the opening of the first shielding plate and the second shielding plate of the workpiece;
A second processing step of moving the holding unit to the second processing position to form a film on a surface corresponding to the opening of the first shielding plate and the second shielding plate of the workpiece. ,
A film forming method characterized by the above. The film formed by the first treatment step and the film formed by the second treatment step are the same or different film formations.
The film forming method according to claim 4.

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