JPH03122274A - Production of thin film and device thereof - Google Patents

Production of thin film and device thereof

Info

Publication number
JPH03122274A
JPH03122274A JP25867589A JP25867589A JPH03122274A JP H03122274 A JPH03122274 A JP H03122274A JP 25867589 A JP25867589 A JP 25867589A JP 25867589 A JP25867589 A JP 25867589A JP H03122274 A JPH03122274 A JP H03122274A
Authority
JP
Japan
Prior art keywords
distance
targets
high
interference
front
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25867589A
Inventor
Yoshitaka Katagiri
Kenro Miyamura
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP25867589A priority Critical patent/JPH03122274A/en
Publication of JPH03122274A publication Critical patent/JPH03122274A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To stably obtain a stable discharge characteristic, uniform film thickness distribution and uniform film characteristics over a long period by alternately arranging targets for film formation on both surfaces of substrates apart to the distance at which the interference between high frequencies does not arise from the faced positions.
CONSTITUTION: The front and rear targets 11, 13 and 12, 14 of the device for inline production of thin films are alternately arranged apart to such distance at which the high-frequency powers to be impressed thereto do not interfere with each other. The distance to be parted is determined by the sizes of the cathodes and targets 11 to 14, the conditions of the film forming chamber, sputtering conditions, etc. Further, the substrates 5 to 10 and substrate holders 2 to 4 are rotated or advanced in parallel. The different regions of the substrate holders 2 to 4 act as anode in such a manner and the mutal interference between the front and rear high-frequency electric powers is lessened. The stable film deposition is, therefore, executed.
COPYRIGHT: (C)1991,JPO&Japio
JP25867589A 1989-10-05 1989-10-05 Production of thin film and device thereof Pending JPH03122274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25867589A JPH03122274A (en) 1989-10-05 1989-10-05 Production of thin film and device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25867589A JPH03122274A (en) 1989-10-05 1989-10-05 Production of thin film and device thereof

Publications (1)

Publication Number Publication Date
JPH03122274A true JPH03122274A (en) 1991-05-24

Family

ID=17323542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25867589A Pending JPH03122274A (en) 1989-10-05 1989-10-05 Production of thin film and device thereof

Country Status (1)

Country Link
JP (1) JPH03122274A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002058121A1 (en) * 2001-01-22 2002-07-25 Ishikawajima-Harima Heavy Industries Co., Ltd Method and device for plasma cvd
JP2003502497A (en) * 1999-06-16 2003-01-21 シーメンス アクチエンゲゼルシヤフト Hot by sputtering - a substrate coating method and apparatus
US7198699B2 (en) 2002-05-06 2007-04-03 Guardian Industries Corp. Sputter coating apparatus including ion beam source(s), and corresponding method
KR100966262B1 (en) * 2008-03-27 2010-06-28 주식회사 피에스티 4 chamber plasma film forming apparatus enabling continuously deposition of front side and back side of wafer
JP2012111975A (en) * 2010-11-19 2012-06-14 Olympus Corp Film deposition method and film deposition apparatus
US9165748B2 (en) 2000-05-17 2015-10-20 Ihi Corporation Plasma CVD method
WO2016017510A1 (en) * 2014-07-31 2016-02-04 株式会社 アルバック Substrate processing device
US9738967B2 (en) 2006-07-12 2017-08-22 Cardinal Cg Company Sputtering apparatus including target mounting and control

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003502497A (en) * 1999-06-16 2003-01-21 シーメンス アクチエンゲゼルシヤフト Hot by sputtering - a substrate coating method and apparatus
JP4947864B2 (en) * 1999-06-16 2012-06-06 シーメンス アクチエンゲゼルシヤフトSiemens Aktiengesellschaft High temperature-substrate coating method and apparatus by sputtering
US9165748B2 (en) 2000-05-17 2015-10-20 Ihi Corporation Plasma CVD method
WO2002058121A1 (en) * 2001-01-22 2002-07-25 Ishikawajima-Harima Heavy Industries Co., Ltd Method and device for plasma cvd
US7047903B2 (en) 2001-01-22 2006-05-23 Ishikawajima-Harima Heavy Industries Co., Ltd. Method and device for plasma CVD
US7198699B2 (en) 2002-05-06 2007-04-03 Guardian Industries Corp. Sputter coating apparatus including ion beam source(s), and corresponding method
US9738967B2 (en) 2006-07-12 2017-08-22 Cardinal Cg Company Sputtering apparatus including target mounting and control
KR100966262B1 (en) * 2008-03-27 2010-06-28 주식회사 피에스티 4 chamber plasma film forming apparatus enabling continuously deposition of front side and back side of wafer
JP2012111975A (en) * 2010-11-19 2012-06-14 Olympus Corp Film deposition method and film deposition apparatus
CN106661722A (en) * 2014-07-31 2017-05-10 株式会社爱发科 Substrate processing device
JPWO2016017510A1 (en) * 2014-07-31 2017-06-29 株式会社アルバック Substrate processing equipment
WO2016017510A1 (en) * 2014-07-31 2016-02-04 株式会社 アルバック Substrate processing device
TWI643286B (en) * 2014-07-31 2018-12-01 日商愛發科股份有限公司 Substrate processing apparatus

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