JP5450202B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a film forming apparatus suitable for manufacturing a gas barrier film and the like, which performs film formation while a long substrate is wound around a drum and conveyed, and more specifically, suppresses abnormal discharge of the drum and forms an appropriate film. The present invention relates to a film forming apparatus capable of stably forming a film.

Various functional films such as gas barrier films, protective films, optical films such as optical filters and antireflection films, etc. in various devices such as optical elements, display devices such as liquid crystal displays and organic EL displays, semiconductor devices, thin film solar cells, etc. (Functional sheet) is used.
In addition, film formation (thin film formation) by a vacuum film formation method such as sputtering or plasma CVD is used for manufacturing these functional films.

In order to perform film formation efficiently and with high productivity by the vacuum film formation method, it is preferable to perform film formation continuously on a long substrate.
As an apparatus for carrying out such a film forming method, a supply roll formed by winding a long substrate (web-shaped substrate) in a roll shape, and a winding roll for winding a film-formed substrate in a roll shape, A so-called roll-to-roll film forming apparatus is known. This roll-to-roll film forming apparatus inserts a long substrate from a supply roll to a take-up roll through a predetermined path that passes through a film formation position where film formation is performed on the substrate. The film formation is continuously performed on the substrate to be transported at the film formation position while the feeding and the winding of the film-formed substrate by the winding roll are performed in synchronization.

In such a roll-to-roll film forming apparatus, the substrate is wound around the peripheral surface of the cylindrical drum and conveyed, and the substrate is formed by the film forming means provided facing the peripheral surface of the drum. An apparatus for forming a film is known.
For example, Patent Document 1 discloses that a raw material gas is turned into plasma by radiating a microwave from a relay antenna disposed facing the drum while the substrate is wound around the drum and conveyed, and a high-frequency power source Describes a CVD apparatus for forming a film on a substrate by plasma CVD using a combination of microwave plasma and RF plasma by converting a raw material gas into plasma by applying a bias potential to the drum.

Further, Patent Document 2 includes a plurality of CVD film forming means (CVD units) provided between a supply roll for feeding a substrate wound in a roll shape and a take-up roll for winding a film-formed substrate. There is described a CVD apparatus having a drum (film forming roll) and capable of individually controlling the operation of each film forming means.
Further, in Patent Document 2, a shower electrode (gas shower) for introducing a source gas and a drum constitute an electrode pair for performing film formation by plasma CVD (capacitive coupling type plasma CVD), and plasma excitation power The structure which connects the high frequency power supply which supplies to a drum and the structure which connects to a shower electrode is described.

In a film forming apparatus using such a drum and accompanied by a discharge for generating plasma, the plasma in the film forming region becomes unstable due to abnormal discharge from the drum outside the film forming region, and the film forming becomes unstable. The film quality may deteriorate and the substrate may be damaged.
In particular, as in the configurations described in Patent Document 1 and Patent Document 2, it has a configuration in which plasma excitation power is supplied to the drum, and a configuration in which a bias potential for improving film formation efficiency and film quality is applied to the drum. In the apparatus, instability of film formation (deterioration of film quality due to this) and substrate damage due to abnormal discharge from the drum easily occur, and the degree of film quality deterioration and substrate damage also increases.

Conventionally, such abnormal discharge is generally suppressed by taking an insulating structure according to the device configuration.
However, it is difficult to completely suppress the abnormal discharge from the drum due to the insulating structure. In particular, the vicinity of the position where the substrate starts to be wound around the drum or the substrate which is wound around the drum and conveyed. It is difficult to take an insulating structure in the vicinity of the position where the gaps are separated, and it is difficult to prevent discharge.

In order to solve such a problem, in the apparatus described in Patent Document 1, a pressure partition (partition plate) is provided so that the degree of vacuum in the film formation chamber and the substrate travel region (travel system chamber) is independent. In order to suppress abnormal discharge, the degree of vacuum of the traveling system chamber is set to a sufficiently high vacuum (low pressure) at which no discharge (plasma) is generated.
On the other hand, in the apparatus described in Patent Document 2, the substrate is sandwiched between the substrate transport area immediately before being wound around the drum, and the transport area immediately after the wound substrate is separated from the drum. A grounded conductor (an antistatic conductor) is provided, and discharge is prevented by an electrostatic shield, thereby suppressing abnormal discharge.

JP 2000-239849 A International Publication No. 2006-93168

However, as described in Patent Document 1, in the method of providing a pressure partition, a gap for transporting the substrate is required between the substrate and the partition, and perfect separation is impossible.
Therefore, the pressure difference between the upstream chamber and downstream chamber of the partition wall, that is, the film forming chamber and the traveling system chamber cannot be maintained, and an unnecessarily high pressure region is generated in the vicinity of the partition wall (that is, the gas outflow point). In this case, it is very difficult to suppress the discharge in the high pressure part.

On the other hand, the method described in Patent Document 2 can avoid inconvenience caused by providing the pressure partition.
However, in this method, there is a case where the substrate before / after film formation is rubbed against the ground plate due to the shaking (so-called fluttering) of the substrate being transferred. In particular, since static electricity due to peeling at a position where the drum and the substrate are separated from each other has a large influence in a vacuum, it is difficult to suppress abnormal discharge at this position.

  An object of the present invention is to solve the above-described problems of the prior art, and is a film forming apparatus that performs film formation by supplying electric power to a drum while the substrate is wound around and transported. The abnormal discharge from the drum can be suitably suppressed at the position where the substrate starts to be wound around the drum, and the position where the substrate supported by the drum is transported, and the drum. It is an object of the present invention to provide a film forming apparatus capable of significantly suppressing the deterioration of film quality and the damage of the substrate caused by the substrate, and suppressing the damage of the substrate due to the substrate flutter.

  In order to achieve the above object, according to the first aspect of the present invention, as a first aspect, a long substrate is wound around the circumferential surface of a cylindrical drum, and film formation is performed on the substrate while being conveyed in the longitudinal direction. In the film apparatus, the film forming means provided on the drum so as to face the peripheral surface, a power source for supplying electric power to the drum, and the drum and the substrate wound around the drum are separated from each other. An opening for inserting the substrate, which is disposed facing the peripheral surface of the drum, is formed, and is electrically conductive and grounded, and a plate-like ground plate and the substrate immediately after being separated from the drum A conveying roller for guiding, the conveying roller being electrically conductive and grounded, and at least a part of the conveying roller being disposed so as to enter the opening of the ground plate. A characteristic film forming apparatus is provided.

In such a film forming apparatus of the present invention, it is preferable that a gap between the transport roller and the drum is smaller than a gap between the ground plate and the drum.
Moreover, it is preferable that the clearance between the transport roller and the drum is 5 mm or less.
The gap between the ground plate and the drum is preferably 7 mm or less.
Moreover, it is preferable that the clearance between the ground plate and the transport roller is 5 mm or less.
Further, it is preferable that the ground plate bends along the peripheral surface of the drum.

  In addition, a plate-like second earth is provided that is provided to face the peripheral surface of the drum at a position where the substrate is wound around the drum, and is formed with an opening for inserting the substrate, and is electrically conductive and grounded. A second conveyance roller for guiding the substrate immediately before being wound around the drum, the second conveyance roller being electrically conductive and grounded, and at least a part of the second conveyance roller However, it is preferable that the second ground plate is disposed so as to enter the opening.

  In order to achieve the above object, as a second aspect of the present invention, a long substrate is wound around the circumferential surface of a cylindrical drum, and a film is formed on the substrate while being conveyed in the longitudinal direction. A film forming apparatus for performing film forming on the drum so as to face the peripheral surface, a power source for supplying electric power to the drum, and a position where the substrate is wound around the drum. An opening for inserting the substrate, which is disposed facing each other, is formed with a plate-shaped second earth plate that is electrically conductive and grounded, and a second that guides the substrate just before being wound around the drum. An opening portion of the second ground plate through which the substrate is inserted, and at least a part of the second conveyance roller is inserted into the substrate. Film forming apparatus characterized by being arranged to enter To provide.

Here, it is preferable that a gap between the second transport roller and the drum is smaller than a gap between the second ground plate and the drum.
In addition, it is preferable that a gap between the second transport roller and the drum is 5 mm or less.
The gap between the second ground plate and the drum is preferably 7 mm or less.
The gap between the second ground plate and the second transport roller is preferably 5 mm or less.
Further, it is preferable that the second ground plate bends along the peripheral surface of the drum.

Moreover, it is preferable that the film forming pressure when forming the film on the substrate by the film forming means is 10 to 100 Pa.
Further, it is preferable to form a film on the substrate by plasma CVD.

According to the present invention having the above-described configuration, in a film forming apparatus that performs film formation while winding a long substrate around a drum and transporting it in the longitudinal direction, the drum and the substrate that are supplied with electric power and also act as electrodes There is a ground plate in which an opening for inserting the substrate is formed in the vicinity of the separation position and / or in the vicinity of the winding start position of the substrate on the drum, and a grounded transport roller for guiding the substrate. And this conveyance roller is arrange | positioned so that at least one part may enter inside the opening part of a ground plate. Therefore, the discharge from the drum at a position where the drum and the substrate are separated can be suppressed.
In addition, flapping of the substrate can be reduced at the position where the drum and the substrate are separated from each other and the position where the substrate starts to be wound around the drum, and even if there is a fluttering, the substrate can be in contact with the ground plate. This can prevent the substrate before and after film formation from being damaged.

  That is, according to the film forming apparatus of the present invention, abnormal discharge from the drum can be suitably suppressed in a region where the drum and the substrate start to contact and a region where the drum and the substrate are separated from each other. By using it in a film-forming apparatus by plasma CVD, the deterioration of the film quality due to the plasma destabilization caused by this abnormal discharge, the damage of the substrate due to the abnormal discharge, etc. are greatly suppressed. It is possible to stably produce a product having an appropriate quality by suppressing damage to the substrate due to the above.

It is a figure which shows notionally an example of the film-forming apparatus of this invention. It is the figure which expanded a part of film-forming apparatus shown in FIG. It is a figure which shows notionally another example of the film-forming apparatus of this invention. It is a conceptual diagram for demonstrating the effect of this invention.

  Hereinafter, the film forming apparatus of the present invention will be described in detail based on a preferred embodiment shown in the accompanying drawings.

FIG. 1 conceptually shows an example of a film forming apparatus of the present invention.
A film forming apparatus 10 shown in FIG. 1 is an apparatus that forms a film by plasma CVD while transporting a long substrate Z in the longitudinal direction, and is formed in the vacuum chamber 12 and the vacuum chamber 12. The unwinding chamber 14, the film forming chamber 16, and the drum 30 are configured.

In the present invention, the substrate Z is not particularly limited, and can be formed by a vapor deposition method (vacuum film formation method) such as plasma CVD, such as a resin film such as a PET (polyethylene terephthalate) film. All film-like materials (sheet-like materials) can be used.
In addition, a film-like product obtained by forming a layer (film) for expressing various functions such as a flattening layer, a protective layer, an adhesion layer, a reflective layer, and an antireflection layer, using a resin film as a base material The substrate Z may be used.

  In the film forming apparatus 10, the long substrate Z is supplied from the substrate roll 32 in the unwinding chamber 14 and is formed in the film forming chamber 16 while being wound around the drum 30 in the longitudinal direction. This is a film forming apparatus using the roll-to-roll described above, which is again returned to the unwinding chamber 14 and wound on the winding shaft 34 (wound in a roll shape).

The drum 30 is a cylindrical member that rotates counterclockwise in the drawing around the center line.
The drum 30 extends in the longitudinal direction while holding a substrate Z guided in a predetermined path by a guide roller 40a and a winding roller 20 of the unwinding chamber 14, which will be described later, around a predetermined region of the peripheral surface and holding the substrate Z in a predetermined position. Then, the film is transported along a predetermined path in the film forming chamber 16 and sent again to the peeling roller 22 in the unwinding chamber 14.

Here, the drum 30 also functions as a counter electrode of a shower electrode 50 in the film forming chamber 16 described later (that is, the drum 30 and the shower electrode 50 constitute an electrode pair). Further, a bias power source 60 is connected to the drum 30. This will be described in detail later.
The drum 30 may be connected not only to the bias power source 60 but also to a grounding (earth) means so that the connection to the bias power source 60 and the grounding can be switched.
Further, the drum 30 may also serve as a temperature adjusting unit for the substrate Z during film formation in the film formation chamber 16. Therefore, it is preferable that the drum 30 includes a temperature adjusting means. The temperature adjusting means of the drum 30 is not particularly limited, and various temperature adjusting means such as a temperature adjusting means for circulating a hot refrigerant and the like, a cooling means using a piezo element, etc. can be used.

The unwinding chamber 14 includes an inner wall surface 12a of the vacuum chamber 12, a peripheral surface of the drum 30, and partition walls 36a and 36b extending from the inner wall surface 12a to the vicinity of the peripheral surface of the drum 30.
Here, the tips of the partition walls 36a and 36b (opposite end to the inner wall surface of the vacuum chamber 12) are close to the peripheral surface of the drum 30 to a position where they can not come into contact with the substrate Z to be transported, and the unwind chamber 14 is formed. The membrane chamber 16 is separated in a substantially airtight manner.

  Such an unwinding chamber 14 includes the winding shaft 34, the winding roller 20, the peeling roller 22, the guide rollers 40a and 40b, the rotating shaft 42, the inlet ground plate 44, and the vacuum exhaust means 46. And an outlet ground plate 48.

In the illustrated example, a substrate roll 32 formed by winding a long substrate Z into a roll is mounted on a rotating shaft 42. When the substrate roll 32 is mounted on the rotating shaft 42, the substrate Z reaches the winding shaft 34 through the guide roller 40a, the winding roller 20, the drum 30, the peeling roller 22, and the guide roller 40b. , A predetermined route is passed (inserted).
In the film forming apparatus 10, the feeding of the substrate Z from the substrate roll 32 and the winding of the film-formed substrate Z on the winding shaft 34 are performed in synchronization, and the long substrate Z is transferred along a predetermined transport path. While being transported in the longitudinal direction, film formation is performed on the surface of the substrate Z wound around the drum 30 in the film formation chamber 16.

  The guide rollers 40a and 40b are normal guide rollers that guide the substrate Z along a predetermined transport path. The take-up shaft 34 is a well-known long take-up shaft for taking up the film-formed substrate Z.

The inlet ground plate 44 and the outlet ground plate 48 are grounded plate members for suppressing abnormal discharge of the drum 30.
The entrance ground plate 44 and the exit ground plate 48 basically have the same configuration and operation except for the disposition position. Therefore, the entrance ground plate 44 only gives the necessary explanation. The explanation will be made with the outlet ground plate 48 as a representative example.

FIG. 2 conceptually shows the vicinity of the position of the outlet ground plate 48.
The outlet ground plate 48 is conductive, is grounded (grounded) by a known means (not shown), and is a plate-like object that is curved along the peripheral surface of the drum 30, and is wound around the drum 30. A region in the vicinity of the position where the substrate Z is separated from the drum 30 (hereinafter, this position is simply referred to as “separated position”) covers the entire width direction of the substrate Z (longitudinal direction = direction perpendicular to the transport direction). The drum 30 is disposed so as to face the drum 30. The outlet ground plate 48 is formed with an opening 48a through which the substrate Z transported through a predetermined path is inserted.
In addition, the entrance ground plate 44 is a plate-like object similar to the exit ground plate 48 and is in the vicinity of a position where the substrate Z starts to be wound around the drum 30 (hereinafter, this position is simply referred to as “winding position”). The area is provided in the same manner as the outlet ground plate 48.

The opening 48a of the outlet ground plate 48 forms a transport path for the substrate Z through which the substrate Z is inserted, and is also a region where a part of the peeling roller 22 is inserted / arranged as will be described later.
The direction of the opening 48a perpendicular to the transport direction of the substrate Z is formed larger than the width of the peeling roller 22 (the direction perpendicular to the transport direction of the substrate Z). The opening 48a is formed in such a size that a part of the peeling roller 22 can be inserted in the transport direction of the substrate Z.

  As described above, since the drum 30 acts as a counter electrode of the shower electrode 50 in CCP-CVD, the separated position can also be regarded as an outlet from the electrode. That is, in the present invention, the outlet ground plate 48 is It can also be said that the substrate Z is discharged from the electrode region, that is, disposed at the electrode outlet. Similarly, the winding position can be regarded as an entrance to the electrode, and it can be said that the entrance ground plate 44 is disposed at the entrance of the electrode, that is, the substrate Z enters the electrode region.

  In the illustrated example, the outlet ground plate 48 is curved and arranged in parallel along the peripheral surface of the drum 30, but the present invention is not limited to this, and is flat and has a drum periphery. You may arrange | position facing a surface. In addition, it is preferable that the outlet ground plate 48 is arranged in parallel so as to be curved along the peripheral surface of the drum 30 in that the abnormal discharge of the drum 30 can be more preferably suppressed.

  Further, the gap a between the outlet ground plate 48 and the drum 30 is preferably 7 mm or less, and more preferably 5 mm or less in terms of more preferably suppressing abnormal discharge from the drum 30. Further, the lower limit of the gap a between the outlet ground plate 48 and the drum 30 may be a distance that can transport the substrate Z and does not short-circuit the outlet ground plate 48 and the drum 30 and is preferably 1 mm or more.

The winding roller 20 and the peeling roller 22 are guide rollers that guide the substrate Z before and after being wound around the drum 30.
Since the winding roller 20 and the peeling roller 22 basically have the same configuration and operation except for the arrangement position, the winding roller 20 performs only the necessary description and the following. The description will be made with the peeling roller 22 as a representative example.

The peeling roller 22 has conductivity and is a guide roller that is grounded (grounded) by a known means (not shown), and guides the substrate Z immediately after being separated from the drum 30.
The peeling roller 22 is arranged in the vicinity of the peeling position between the substrate Z and the drum 30, and a part of the peeling roller 22 is arranged inside the opening 48 a of the outlet ground plate 48. In the illustrated example, the separation roller 22 is disposed so that the gap b between the drum 30 and the gap 30 between the outlet ground plate 48 and the drum 30 is smaller.
The winding roller 20 is a guide roller similar to the peeling roller 22 and is disposed in the vicinity of the position where the substrate Z starts to be wound around the drum 30, and a part of the winding roller 20 is provided in the opening 44 a of the entrance ground plate 44. It is arranged to enter inside.

As described above, in the film forming apparatus 10 of the present invention, film formation is performed while a bias potential is applied from the bias power source 60 to the drum 30 on which the substrate Z is wound and conveyed.
In an apparatus for forming a film on the substrate Z by generating a plasma or the like while winding the substrate Z around the drum 30 and transporting it in the longitudinal direction and supplying power to the drum 30, supply it to the drum 30. Due to the high output power, discharge from the drum (abnormal discharge) occurs also in areas other than the film formation area that is desired to be discharged for plasma generation, etc., which causes film quality degradation, substrate Z and film formation. Film damage, equipment damage, and the like occur.

Here, the abnormal discharge can be suppressed by arranging a grounded conductive plate, that is, a grounding plate, facing and adjacent to the drum 30.
However, as conceptually shown in FIGS. 2 and 4, since it is necessary to secure the transport path of the substrate Z in the vicinity of the winding position and the separation position, even if a ground plate is installed facing the drum, It is necessary to form an opening through which the substrate Z is inserted, resulting in a region where the ground plate cannot be installed facing the drum.

  For example, as in the film forming apparatus 100 shown in FIG. 4, the peeling roller 106 that guides the substrate Z immediately after being separated from the drum 102 is more than the outlet ground plate 104 arranged facing the peripheral surface of the drum 102. In the case where the opening 104a of the outlet ground plate 104 is arranged at a position far from the drum 102, if the substrate Z can be inserted and the opening is as small as possible, abnormal discharge can be suppressed. it can.

  However, as described above, the substrate Z being transferred is fluctuated, so that the substrate Z may come into contact with the outlet ground plate 104 and be damaged. In particular, when film formation is performed by supplying electric power to the drum 102, the position where the substrate Z is separated from the drum 102 is not stable because the substrate Z is charged and attached to the drum 102 by electrostatic force. As indicated by a broken line in FIG. 4, the flutter amount t of the substrate Z becomes large.

Therefore, in the film forming apparatus 100 in which the peeling roller 106 is disposed at a position farther from the drum 102 than the exit ground plate 104, it is necessary to enlarge the opening 104 a so that the substrate Z does not contact the exit ground plate 104. In other words, the abnormal discharge from the drum 102 cannot be sufficiently suppressed.
Further, particularly at the separated position, the influence of static electricity generated when the drum 102 and the substrate Z are separated, that is, peeled off, that is, so-called peeling discharge is large, and abnormal discharge is likely to occur.

  In contrast, in the film forming apparatus 10 of the present invention, at least a part of the grounded peeling roller 22 (the winding roller 20), which is a guide roller closest to the drum 30, is peeled off from the drum 30 and the substrate Z. Since it is disposed so as to enter the opening 48a (opening 44a) of the outlet ground plate 48 (entrance ground plate 44) disposed in the vicinity of the position (winding position), the drum in the region facing the opening 48a The abnormal discharge from 30 can also be suppressed.

  In addition, since at least a part of the peeling roller 22 (the winding roller 20) is disposed so as to enter the opening 48a (opening 44a), even if the substrate Z flutters, the substrate Z remains at the outlet ground. The contact with the plate 48 (entrance ground plate 44) can be prevented. Further, since the gap between the peeling roller 22 (the winding roller 20) and the drum 30 can be reduced, the amount of fluttering of the substrate Z can also be reduced, and the substrate Z is peeled off from the drum 30. The generated peeling discharge can also be suppressed.

  Here, the gap b between the peeling roller 22 and the drum 30 is preferably 5 mm or less from the viewpoint that the abnormal discharge from the drum can be more preferably suppressed and the fluttering of the substrate Z can be more preferably suppressed. 4 mm or less is more preferable. Further, the lower limit of the gap b between the peeling roller 22 and the drum 30 may be a distance that can transport the substrate Z and does not short-circuit the peeling roller 22 and the drum 30, and is more preferably 1 mm or more.

  Further, the gap c between the peeling roller 22 and the outlet ground plate 48 is preferably 5 mm or less, and more preferably 2 mm or less in terms of more preferably suppressing abnormal discharge from the drum 30. Further, the lower limit of the gap c between the peeling roller 22 and the outlet ground plate 48 is only required to be able to transport the substrate Z, and more preferably 1 mm or more.

  In the illustrated film forming apparatus 10, the separation roller 22 is disposed at a position where the gap b between the separation roller 22 and the drum 30 is smaller than the gap a between the outlet ground plate 48 and the drum 30. The present invention is not limited to this, and a position where the gap b between the peeling roller 22 and the drum 30 is not less than the gap a between the outlet ground plate 48 and the drum 30 as in the film forming apparatus 80 shown in FIG. Alternatively, the peeling roller 22 may be disposed. Note that it is preferable that the gap b is smaller than the gap a in terms of more preferably suppressing abnormal discharge and more preferably suppressing the fluttering of the substrate Z.

  The vacuum exhaust means 46 reduces the pressure in the unwinding chamber 14 to a pressure corresponding to the pressure in the film forming chamber 16 (film forming pressure), so that the pressure in the unwinding chamber 14 for feeding and winding the substrate Z is reduced. This is to prevent the film formation in the film formation chamber 16 and the second film formation chamber 24 from being adversely affected.

In the present invention, the vacuum exhaust means 46 is not particularly limited, and vacuum pumps such as turbo pumps, mechanical booster pumps, rotary pumps, and dry pumps, further auxiliary means such as cryocoils, the degree of ultimate vacuum and the amount of exhaust. Various known (vacuum) evacuation means used in a vacuum film forming apparatus using an adjustment means or the like can be used.
In this regard, the same applies to the vacuum exhaust means 56 described later.

The pressure in the unwind chamber 14 is not particularly limited, and a pressure that does not adversely affect the pressure may be set as appropriate according to the pressure in the film forming chamber 16.
Here, in the drum 30, an abnormal discharge is suppressed between a region where the substrate is not wound, that is, a position where the substrate Z starts to be wound around the drum 30 and a position where the wound substrate Z is separated from the drum 30. In order to achieve this, the pressure in the unwind chamber 14 is preferably lower than that in the film forming chamber 16, and in particular, a sufficiently low pressure (high vacuum) that does not cause abnormal discharge is appropriately set. Is preferred.
Considering this point, the pressure in the unwinding chamber 14 is preferably 1/10 or less of the film forming chamber 16 or 10 Pa or less.

In the illustrated film forming apparatus 10, a film forming chamber 16 is disposed below the unwinding chamber 14.
In the illustrated example, the film forming chamber 16 includes an inner wall surface 12a of the vacuum chamber 12, a peripheral surface of the drum 30, and partition walls 36a and 36b.

In the illustrated example, the unwinding chamber 14 and the film forming chamber 16 are substantially airtightly separated only by the partition walls 36a and 36b using the drum 30, but the present invention is not limited to this. .
For example, between the unwinding chamber 14 and the film forming chamber 16 (between the winding roller 20 and the drum 30 and between the drum 30 and the peeling roller 22), the unwinding chamber is provided only by the transport path of the substrate Z. 14 and the film forming chamber 16 are provided in a chamber that is substantially airtightly separated from both chambers, and a pressure adjusting means is provided here to separate the unwinding chamber 14 and the film forming chamber 16 from each other. And it is good also as a differential pressure | voltage chamber for preventing mixing of the gas between both chambers.

In the film forming apparatus 10 of the illustrated example, the film forming chamber 16 forms a film on the surface of the substrate Z by CCP (Capacitively Coupled Plasma) -CVD as an example. Source gas supply means 52, high frequency power supply 54, vacuum exhaust means 56, and third ground plates 58a and 58b are arranged.
Further, as described above, the bias power source 60 is connected to the drum 30.

The shower electrode 50 is a known shower electrode used for CCP-CVD.
In the illustrated example, the shower electrode 50 has a hollow, substantially rectangular parallelepiped shape as an example, and is disposed with one maximum surface facing the peripheral surface of the drum 30. In addition, a large number of through holes are formed on the entire surface of the shower electrode 50 facing the drum 30.
In addition, in the example of illustration, as a preferable aspect, although the opposing surface with the drum 30 of the shower electrode 50 is curving so that the surrounding surface of the drum 30 may be followed, flat plate shape may be sufficient.
Further, the distance between the shower electrode 50 and the drum 30 is preferably 10 to 100 mm.

In the illustrated example, one shower electrode (a film forming means by CCP-CVD) is disposed in the film forming chamber 16, but the present invention is not limited to this, and the substrate Z can be transferred. A plurality of shower electrodes may be arranged in the direction. In this regard, the same applies when using plasma CVD other than CCP-CVD. For example, when forming a film by ICP-CVD, a coil is used to form an induced electric field (inductive magnetic field), and the substrate Z A plurality of them may be arranged in the transport direction.
In addition, the present invention is not limited to using the shower electrode 50, and an ordinary plate electrode and a nozzle for supplying a source gas may be used.

The source gas supply means 52 is a known gas supply means used in a vacuum film forming apparatus such as a plasma CVD apparatus, and supplies a source gas into the shower electrode 50.
As described above, many through holes are supplied to the surface of the shower electrode 50 facing the drum 30. Accordingly, the source gas supplied to the shower electrode 50 is introduced between the shower electrode 50 and the drum 30 from this through hole.

The high frequency power source 54 is a power source that supplies plasma excitation power to the shower electrode 50. As the high-frequency power source 54, all known high-frequency power sources used in various plasma CVD apparatuses can be used.
Further, the vacuum evacuation means 56 exhausts the inside of the film forming chamber 16 and keeps it at a predetermined film forming pressure for film formation by plasma CVD.
The pressure in the film forming chamber 16 (film forming pressure) is preferably 10 to 200 Pa in the case of CCP-CVD. When the film forming pressure is less than 10 Pa, it is difficult to increase the film forming rate. Further, when the film forming pressure exceeds 200 Pa, the reaction of the raw material gas proceeds in the air, and fine powder is generated. Therefore, the film quality of the film formed on the substrate Z is deteriorated.

In the present invention, the film forming method in the CVD film forming chamber is not limited to the CCP-CVD in the illustrated example. For example, Cat-CVD (Journal of the Society of Materials Science, Japan Vol. 55 No. 2 p142, (Feb, 2006).
In the film forming apparatus of the present invention, the film formed in the CVD film forming chamber is not particularly limited, and any film that can be formed by CVD can be used. Preferred examples include inorganic films such as silicon nitride, aluminum oxide, and silicon nitride, DLC (diamond-like carbon film), and transparent conductive films.

As described above, the bias power source 60 is connected to the drum 30.
In the illustrated film forming apparatus 10, the drum 30 functions as a counter electrode of the shower electrode 50 (plasma excitation electrode) in film formation by CCP-CVD. In the film forming apparatus 10, a bias power source 60 is connected to the drum 30 and a bias potential is applied to the drum 30 as a counter electrode, thereby improving the film quality of the film to be formed and improving the productivity (film forming efficiency). Etc.

  In the illustrated example, the bias power source 60 (the power source that supplies power to the drum 30) is a high-frequency power source as an example, but the present invention is not limited to this, and in CCP-CVD, such as an AC or DC pulse power source. All power supplies used to apply a bias potential to the counter electrode are available.

In the present invention, the input power for applying a bias potential to the drum 30 is not particularly limited. Here, the higher the bias potential, the better the film quality and the productivity. On the other hand, the higher the bias potential, the easier the abnormal discharge of the drum 30 described later occurs. However, as described above, according to the present invention, abnormal discharge at the peeling portion of the substrate Z from the drum 30 can be suppressed even when a high bias potential is applied.
Considering the above points, in the present invention, a bias potential is applied in that the film quality improving effect and the productivity improving effect can be sufficiently obtained and the effect of the present invention of suppressing abnormal discharge can be sufficiently exhibited. The input power for this is preferably 50 W or more.

In the film forming apparatus 10 of the illustrated example, as a preferable aspect, the film forming chamber 16 has a third ground plate 58a facing the peripheral surface of the drum 30 other than the film forming region (other than the region facing the shower electrode 50). And 58b (hereinafter collectively referred to as a third ground plate 58).
The third ground plate 58 is a conductive plate material that is grounded (grounded) by a known means and is curved with the same curvature as the peripheral surface of the drum 30.

As described above, in the film forming apparatus 10 of the present invention, the bias power source 60 is connected to the drum 30 and a film is formed on the substrate by CCP-CVD while a bias potential is applied to the drum 30.
When film formation is performed while applying a high bias potential to the drum 30, productivity and film quality can be improved. On the other hand, when a high bias potential is applied to the drum 30 (high power is supplied), abnormal discharge that discharges from the drum 30 outside the film formation region facing the shower electrode 50 occurs. When such abnormal discharge from the drum 30 is generated, the discharge in the film formation region is affected, and as a result, the plasma generated in the film formation region becomes unstable, resulting in film formation. The film quality of the film to be deteriorated. In addition, when abnormal discharge from the drum 30 occurs, the substrate Z or the film formed may be damaged, and the apparatus may be further damaged.

  On the other hand, in the film forming apparatus 10 of the illustrated example, as a preferred embodiment, in the film forming chamber 16, a third ground which is electrically conductive and faces the peripheral surface of the drum 30 other than the film forming region. A plate 58 is disposed. Thereby, abnormal discharge from the drum 30 other than the film formation region is suppressed, and it is possible to stably perform appropriate film formation without film quality deterioration or substrate damage caused by the abnormal discharge.

If the third earth plate 58 is basically disposed so as to face the drum 30 at a part other than the film formation region, the effect of suppressing abnormal discharge can be obtained. It is preferable to cover the peripheral surface of the drum 30 other than the maximum possible range in terms of the configuration of the apparatus.
Further, the distance between the third earth plate 58 and the peripheral surface of the drum 30 is not particularly limited, but the closer one has a greater effect of suppressing abnormal discharge, and is possible in terms of the device configuration considering contact with the substrate Z and the like. Although it is preferable to be as close as possible, according to the study by the present inventors, the distance between the third ground plate 58 and the peripheral surface of the drum 30 is 5 mm or less, particularly 3 mm or less. The abnormal discharge of the drum inside can be suitably suppressed.

  In the film forming chamber 16, the substrate Z transported while being wound around the drum 30 and formed into a film by the CCP-CVD method between the shower electrode 50 and the drum 30 reaches the unwind chamber 14 again. Guided by the peeling roller 22, separated from the drum 30, guided by the guide roller 40 b, conveyed along a predetermined path to reach the winding shaft 34, and again wound into a roll shape.

Hereinafter, the operation of the film forming apparatus 10 will be described.
As described above, when the substrate roll 32 is loaded on the rotating shaft 42, the substrate Z is pulled out from the substrate roll 32, and passes through the guide roller 40a, the winding roller 20, the drum 30, the peeling roller 22, and the guide roller 40b. Then, it is inserted through a predetermined conveyance path that reaches the winding shaft 34.

When the substrate Z is inserted, the vacuum chamber 12 is closed, the evacuation means 46 and 56 are driven, and the evacuation of the unwind chamber 14 and the film formation chamber 16 is started.
When the unwinding chamber 14 and the film forming chamber 16 are evacuated to a predetermined vacuum level or less, the source gas supply unit 52 is then driven to supply the source gas to the film forming chamber 16. The driving is adjusted according to the predetermined pressure in the unwinding chamber 16.

  When the pressures in the unwinding chamber 14 and the film forming chamber 16 are stabilized at a predetermined pressure, the drum 30 and the like are started to rotate to start transporting the substrate Z, and the high frequency power source 54 and the bias power source 60 are driven to drive the substrate. While transporting Z in the longitudinal direction, deposition on the substrate Z in the deposition chamber 16 is started.

Here, as described above, in the present invention, the entrance ground plate 44 is at the winding position (inlet to the electrode) where the winding of the substrate Z around the drum 30 is started, and the substrate Z is separated from the drum 30. The exit ground plate 48 is disposed at a position (exit from the electrode), and the winding roller 20 is disposed so that a part of the winding roller 20 enters the opening 44a of the entrance ground plate 44. Since the peeling roller 22 is disposed so that a part of the peeling roller 22 enters the opening 48a of the outlet ground plate 48, abnormal discharge from the drum 30 in the vicinity of the winding position and in the vicinity of the peeling position is preferably performed. It is possible to suppress the deterioration of the film quality due to the abnormal discharge, the damage of the substrate / film surface and the device, and the like.
Further, since the fluttering of the substrate Z in the vicinity of the winding position and the peeling position can be suppressed, it is possible to suppress the substrate Z from coming into contact with the entrance ground plate 44 and the exit ground plate 48 and being damaged.
In the illustrated example, since the third ground plate 58 is provided in the film forming chamber 16 in addition to the film forming region, abnormal discharge in the film forming chamber 16 can be suitably suppressed, and the above-described abnormal discharge is caused. Inconvenience can be more suitably suppressed.

  The film forming apparatus 10 shown in FIG. 1 is configured to supply plasma excitation power to the shower electrode 50 facing the peripheral surface of the drum 30 and to apply a bias potential to the drum 30, but the present invention is not limited to this. Alternatively, the drum 30 may be configured to supply plasma excitation power.

Further, the film formation method in the film formation chamber is not limited to plasma CVD, and sputtering or the like can also be suitably used.
That is, the present invention is an apparatus for forming a film on a substrate wound on a drum while carrying a long substrate on a drum while conveying the film while supplying power to the drum. If it is a thing, it can utilize for various film-forming methods and film-forming apparatuses. Among these, plasma CVD, in which abnormal discharge from the drum is likely to occur due to the film forming pressure, and particularly CCP-CVD can be suitably used.

Further, in the film forming apparatus 10 of the illustrated example, as a preferred embodiment, the entrance ground plate 44 and the exit ground plate 48 are respectively disposed at the winding position and the peeling position, and the openings (44a, 48a) are wound around the openings (44a, 48a). Although the winding roller 20 and the peeling roller 22 are arranged so that a part of the roller 20 and the peeling roller 22 enter, the present invention is not limited to this.
That is, the winding roller 20 may be arranged so that a part of the winding roller 20 enters the opening 44a of the entrance ground plate 44, or the peeling roller 22 has a part of the opening of the exit ground plate 48. It may be arranged only to enter the portion 48a.

Here, when abnormal discharge occurs at the winding position, the surface (film formation surface) of the substrate Z is damaged, and as a result, the surface property of the film formation surface may be deteriorated. On the other hand, as described above, abnormal discharge from the drum is more likely to occur at the peeling position due to peeling discharge or the like.
Therefore, the surface properties of the film formation surface of the substrate Z are good depending on the product to be manufactured, the film formed in the film formation chamber 16, and the type of the substrate Z (formation material of the film formation surface, etc.). Is important, it is preferable that the winding roller 20 is disposed so that a part of the winding roller 20 enters the inside of the opening 44a of the entrance ground plate 44, and when it is desired to more reliably suppress abnormal discharge from the drum. In this case, the peeling roller 22 is preferably arranged so that a part of the peeling roller 22 enters the inside of the opening 48 a of the outlet ground plate 48.
For example, when the surface properties of the film formation surface are very important, such as in the production of a gas barrier film for forming a silicon nitride film or a silicon oxide film, at least the winding roller 20 and a part of the entrance ground plate It is preferable to arrange so as to enter the inside of the opening 44a of the 44.

In addition, when it is important to suppress film quality deterioration due to plasma fluctuation due to abnormal discharge, or to prevent damage to the apparatus due to abnormal discharge, at least a part of the peeling roller 22 is an exit ground plate 48. It is preferably arranged so as to enter the inside of the opening 48a.
In consideration of these points, it is most preferable that the winding roller 20 and the peeling roller 22 are respectively arranged so that a part thereof is inside the opening (44a, 48a).

  Further, if possible in the configuration of the apparatus, at least a part of the entrance ground plate 44 and the exit ground plate 48 may be integrally configured.

  Although the film forming apparatus of the present invention has been described in detail above, the present invention is not limited to the above-described examples, and various improvements and modifications may be made without departing from the gist of the present invention. Of course.

Hereinafter, the present invention will be described in more detail by showing specific examples of the present invention.
[Example 1]
A silicon oxide film was formed on the substrate Z using the film forming apparatus 10 shown in FIG.

As the substrate Z, a polyester resin film (polyethylene terephthalate film manufactured by Fuji Film) was used.
The drum 30 was made of stainless steel and had a diameter of 1000 mm.
The source gas for film formation by CCP-CVD was HMDSO (hexamethyldisiloxane), oxygen gas, and nitrogen gas, and the film formation pressure was 50 Pa.
The high frequency power source 54 was a high frequency power source having a frequency of 13.56 MHz, and the plasma excitation power supplied to the shower electrode 50 was 2000 W.
The bias power source 60 was a high frequency power source with a frequency of 400 kHz, and the bias power supplied to the drum 30 was 200 W.

The entrance ground plate 44 and the exit ground plate 48 are both made of aluminum and have a thickness of 6 mm, and are arranged in parallel with the drum at a position where the gap a with the drum 30 is 4 mm.
Both the winding roller 20 and the peeling roller 22 are made of aluminum whose surface is chrome-plated, the gap b with the drum 30 is 2 mm, and the gap with the entrance ground plate 44 (outlet ground plate 48). c was 1 mm.

Under such film forming conditions, a silicon oxide film was formed on a 1-m substrate Z in the film forming apparatus 10. The substrate transfer speed was 2 m / min.
During film formation, the occurrence of discharge at the peeling position of the unwind chamber 14 was visually observed to evaluate the state of abnormal discharge.
Evaluation is based on the case where abnormal discharge was not observed from the start to the end of film formation.
A case where a slight discharge is observed in the vicinity of either the winding position or the peeling position between the start and end of film formation;
A case where abnormal discharge is observed in any place between the start and end of film formation;
The case where strong abnormal discharge was observed in any place during the period from the start to the end of film formation was indicated as x;
As a result, the evaluation was “◎”.

Further, the surface property of the substrate Z was evaluated by observing the sample after film formation with an AFM (atomic force microscope).
Evaluation was made when no damage was found on the substrate surface.
A slight damage is observed on the substrate surface, but there is no practical problem.
When the damage which is a problem practically was recognized on the substrate surface, it was set as x;
As a result, it was “◯”.

[Example 2]
Except that the distance (gap b) between the winding roller 20 and the peeling roller 22 and the drum 30 is changed to 5 mm, that is, the gap b> gap a. A film was formed.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, the evaluation was “◎”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, evaluation was "(circle)".

[Example 3]
The distance between the winding roller 20 and the peeling roller 22 and the drum 30 (gap b) is changed to 8 mm, and the distance between the winding roller 20 and the peeling roller 22 and the ground plate (gap c) is changed to 4 mm. In the same manner as in Example 1, a silicon oxide film was formed on the substrate Z.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, some abnormal discharge was observed, and the evaluation was “◯”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, evaluation was "(circle)".

[Example 4]
A silicon oxide film was formed on the substrate Z in exactly the same manner as in Example 1, except that the distance (gap c) between the winding roller 20 and the peeling roller 22 and the ground plate was changed to 5 mm.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, some abnormal discharge was observed, and the evaluation was “◯”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, evaluation was "(circle)".

[Example 5]
The distance (gap b) between the winding roller 20 and the peeling roller 22 and the drum 30 is changed to 9.5 mm, and the distance (gap c) between the winding roller 20 and the peeling roller 22 and the ground plate is changed to 3 mm. Except for the above, a silicon oxide film was formed on the substrate Z in exactly the same manner as in Example 1.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, slight discharge was observed between the winding roller 20 and the peeling roller 22 and the drum 30, and the evaluation was “◯”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, evaluation was "(triangle | delta)".

[Example 6]
The distance between the winding roller 20 and the peeling roller 22 and the drum 30 (gap b) is changed to 5 mm, and the distance between the winding roller 20 and the peeling roller 22 and the ground plate (gap c) is changed to 5 mm. A silicon oxide film was formed on the substrate Z in exactly the same manner as in Example 1 except that the thickness of the ground plate was changed to 4 mm.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, some abnormal discharge was observed, and the evaluation was “◯”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, evaluation was "(circle)".

[Example 7]
A silicon oxide film was formed on the substrate Z in exactly the same manner as in Example 2, except that the distance (gap a) between the inlet ground plate 44 and outlet ground plate 48 and the drum 30 was changed to 7 mm.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, the evaluation was “◎”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, evaluation was "(circle)".

[Example 8]
The distance (gap b) between the peeling roller and the drum is 15 mm, the peeling roller is disposed at a position farther from the drum than the exit ground plate, and the exit ground plate A silicon oxide film was formed on the substrate Z in exactly the same manner as in Example 1 except that the distance (gap c) from the peeling roller was 10 mm.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, abnormal discharge was observed between the peeling roller and the drum 30, and the evaluation was “Δ”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, evaluation was "(triangle | delta)".

[Example 9]
The distance (gap b) between the winding roller and the drum is set to 15 mm, the winding roller is arranged at a position farther from the drum than the entrance ground plate, and the grounding at the entrance is considered in consideration of rubbing with the ground plate due to the flutter of the substrate Z. A silicon oxide film was formed on the substrate Z in exactly the same manner as in Example 1 except that the distance (gap c) between the plate and the winding roller was 10 mm.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, slight abnormal discharge was observed between the winding roller and the drum 30, and the evaluation was “◯”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, evaluation was "(triangle | delta)".

[Comparative Example 1]
As shown in FIG. 4, the distance (gap b) between the winding roller and the peeling roller and the drum is 45 mm, and the winding roller and the peeling roller are located farther from the drum than the entrance ground plate and the exit ground plate, respectively. In the same manner as in Example 1 except that the distance (gap c) between the ground plate, the winding roller and the peeling roller was set to 35 mm in consideration of the friction with the ground plate due to the fluttering of the substrate Z, A silicon oxide film was formed on the substrate Z.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, a strong local abnormal discharge was confirmed between the winding roller and the peeling roller and the drum, and the evaluation was “x”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, the rough surface of the board | substrate which became a problem practically was confirmed, and evaluation was "x".

[Comparative Example 2]
The substrate Z is oxidized in the same manner as in Example 1 except that the entrance ground plate 44 and the exit ground plate 48 are not disposed, and the distance (gap b) between the winding roller and the peeling roller and the drum is 45 mm. A silicon film was formed.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, abnormal discharge was observed in the entire opening, and the evaluation was “Δ”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, the rough surface of the board | substrate which became a problem practically was confirmed, and evaluation was "x".

[Comparative Example 3]
The distance (gap b) between the winding roller and the peeling roller and the drum is set to 15 mm, and the winding roller and the peeling roller are arranged farther from the drum than the entrance ground plate and the exit ground plate, respectively. A silicon oxide film is formed on the substrate Z in exactly the same manner as in Example 1 except that the distance (gap c) between the ground plate, the winding roller and the peeling roller is set to 10 mm in consideration of friction with the ground plate due to fluttering. A film was formed.
When the state of abnormal discharge was evaluated in the same manner as in Example 1, local abnormal discharge was confirmed between the winding roller and the peeling roller and the drum, and the evaluation was “x”.
Moreover, when the surface property of the board | substrate Z was evaluated similarly to Example 1, the rough surface of the board | substrate which became a problem practically was confirmed, and evaluation was "x".
The above results are summarized in Table 1 below.

As shown in Table 1, at least a part of the peeling roller (winding roller) is placed inside the opening of the outlet ground plate (inlet ground plate) disposed in the vicinity of the peeling position (winding position). In each of Examples 1 to 9 of the present invention, it was possible to reduce the occurrence of abnormal discharge, and it was possible to reduce film quality deterioration and substrate Z damage caused by discharge.
Further, the gap a between the ground plate and the drum, the gap b between the peeling roller (winding roller) and the drum, and the gap c between the peeling roller (winding roller) and the ground plate are made narrower. It was possible to suppress abnormal discharge.
Further, by disposing both the peeling roller and the winding roller so as to be inside the openings of the outlet ground plate and the inlet ground plate, respectively, abnormal discharge can be suppressed more suitably.

On the other hand, in Comparative Examples 1 and 3 in which the peeling roller and the winding roller are disposed farther than the ground plate and in Comparative Example 2 in which the ground plate is not disposed, a strong abnormal discharge occurs, which is a practical problem. Damage was observed.
From the above results, the effect of the present invention is clear.

  According to the present invention, a functional film free from film quality deterioration caused by discharge can be stably produced, and thus can be suitably used for producing a gas barrier film.

10, 80, 100 Film forming apparatus 12 Vacuum chamber 14 Unwinding chamber 16 Film forming chamber 20 Rolling roller 22 Peeling roller 30, 102 Drum 32 Substrate roll 34 Winding shaft 36 Bulkhead 40, 106 Guide roller 42 Rotating shaft 44 Inlet ground Plate 44a, 48a, 104a Opening 46, 56 Vacuum exhaust means 48 Exit ground plate 50 Shower electrode 52 Source gas supply means 54 High frequency power supply 58 Third ground plate 60 Bias power supply 104 Ground plate

Claims (15)

A film forming apparatus for forming a film by sputtering or plasma CVD on a long substrate wound around a circumferential surface of a cylindrical drum and conveyed in the longitudinal direction,
A film forming means provided on the drum so as to face the peripheral surface;
A power source for supplying power to the drum;
An opening for passing through the substrate is formed at a position where the drum and the substrate wound around the drum are separated from each other so as to face the peripheral surface of the drum. A plate-like earth plate,
A conveyance roller for guiding the substrate immediately after being separated from the drum,
The film forming apparatus, wherein the transport roller is conductive and grounded, and at least a part of the transport roller is disposed so as to enter the opening of the ground plate.   The film forming apparatus according to claim 1, wherein a gap between the transport roller and the drum is smaller than a gap between the ground plate and the drum.   The film forming apparatus according to claim 1, wherein a gap between the transport roller and the drum is 5 mm or less. Gap between the drum and the ground plate, the film formation apparatus according to any one of claims 1 to 3 is 7mm or less. Film forming apparatus according to claim 1, the gap between the ground plate and the conveying roller is 5mm or less. Film forming apparatus according to any one of claims 1 to 5, the entire surface of the ground plate is curved along the peripheral surface of the drum. A plate-like second earth plate provided to face the peripheral surface of the drum at a position where the substrate wraps around the drum, having an opening for inserting the substrate, and being electrically conductive and grounded; ,
A second conveying roller for guiding the substrate immediately before being wound around the drum,
The second transport roller is electrically conductive and grounded, and at least a part of the second transport roller is disposed so as to enter the opening of the second ground plate. The film forming apparatus according to any one of the above. A film forming apparatus for forming a film by sputtering or plasma CVD on a long substrate wound around a circumferential surface of a cylindrical drum and conveyed in the longitudinal direction,
A film forming means provided on the drum so as to face the peripheral surface;
A power source for supplying power to the drum;
A plate-shaped second ground plate, which is disposed facing the peripheral surface of the drum at a position where the substrate is wound around the drum, is formed with an opening for inserting the substrate, and is electrically conductive and grounded. When,
A second conveying roller for guiding the substrate immediately before being wound around the drum,
The second transport roller is conductive and grounded, and at least a part of the second transport roller is disposed so as to enter an opening of the second ground plate for inserting the substrate. A film forming apparatus characterized by comprising:   The film forming apparatus according to claim 7, wherein a gap between the second conveyance roller and the drum is smaller than a gap between the second ground plate and the drum. Gap between the drum and the second conveying roller, the film forming apparatus according to any one of claims 7-9 is 5mm or less. Gap between the drum and the second grounding plate, the film formation apparatus according to any one of claims 7 to 10 is 7mm or less. Film forming apparatus according to any one of claims 7 to 11 gap between the second conveying roller and the second ground plate is 5mm or less. Film forming apparatus according to any one of claims 7 to 12 the entire surface of the second ground plate is curved along the peripheral surface of the drum. Film forming apparatus according to any one of claims 1 to 13 deposition pressure during the film formation on the substrate by the film forming means is 10-100 Pa. By plasma CVD, the film forming apparatus according to any one of claims 1 to 14 to form a film on the substrate.

Images