JP2004099958A - Ion plating method and apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an ion plating method by which a film having excellent crystallinity and good quality can be obtained, and to provide an apparatus therefor. <P>SOLUTION: The ion plating apparatus is provided with a pressure gradient type plasma gun, and an anode member. The anode member has a hearth serving as the main anode for introducing a plasma beam downward. A pair of electromagnets 26a and 26b for generating magnetic fields are provided, and magnetic fields having magnetic lines of force parallel to a substrate W are generated around the substrate W. A pair of electrodes 28a and 28b are provided having the substrate W interposed between them, and an equal potential electric field having the potential of the electrodes is generated in the space along the magnetic lines of force of the magnetic fields. When a vapor deposition material is ionized by the plasma beam, collides against the substrate W and is deposited thereon, the kinetic energy on the collision of the ions of the vapor deposition material against the substrate is remarkably relaxed since the electric fields of the potential to be a reverse bias to the hearth are generated in the vicinity of the surface of the substrate W. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an ion plating method and an apparatus therefor.
[0002]
[Prior art]
As a method for forming a film under a vacuum, a sputtering method, a vacuum evaporation method, a CVD method, and the like are properly used depending on applications.
[0003]
In the sputtering method, when argon ions in the plasma collide with the target material, particles struck out of the target material enter the substrate with a kinetic energy of several eV and deposit on the surface of the substrate to form a film. Done.
[0004]
On the other hand, in the case of the vacuum evaporation method or the CVD method, the kinetic energy of the particles to be formed is 1 eV or less, which is smaller than that of the sputtering method.
[0005]
In the film formation process, since the crystallinity is improved as the migration of particles on the substrate surface is more actively performed, from the viewpoint of obtaining a high quality film, the sputtering method is preferably used among these methods. I have.
[0006]
Here, a high-quality film refers to, for example, a film having good crystallinity, low specific resistance, and low stress.
[0007]
[Problems to be solved by the invention]
However, in the case of the sputtering method, in addition to the particles of the film forming material having the kinetic energy of several eV, neutral argon particles collide with the target material and extremely reach several hundred eV according to the potential of the target material. There are a few recoil argon particles generated by applying a large kinetic energy. Then, the recoil argon particles collide with the substrate during film formation, thereby deteriorating the crystallinity of the film. This limits the quality of the film formed by the sputtering method. As a method for avoiding this problem, it is conceivable to lower the incident energy. However, in this case, it is difficult to completely eliminate the presence of the recoil argon particles, and a remarkable decrease in the film forming rate is caused.
[0008]
By the way, an ion plating method, which is a kind of film forming method, is a method of ionizing heated and evaporated particles by using, for example, arc plasma and accelerating by an electric field to give kinetic energy of about several tens eV to the particles. It is. This ion plating method is characterized in that a film is formed at a high film forming rate and a large area can be formed, and the obtained film has excellent adhesion. In the case of the ion plating method, there are no recoil particles having extremely large kinetic energy as in the case of the sputtering method.
[0009]
However, in the ion plating method, depending on the film forming conditions, a large number of particles having a kinetic energy larger than about several tens eV may be generated and incident on the substrate. The presence of particles having a large kinetic energy may be an obstacle to obtaining a film quality having good crystallinity.
[0010]
The present invention has been made in view of the above-described problems, and has as its main object to provide an ion plating method and an apparatus therefor that can obtain a film having excellent crystallinity and good quality.
[0011]
[Means for Solving the Problems]
The ion plating method according to the present invention is a method for supplying a high-density plasma beam by arc discharge toward a deposition material loaded on a hearth arranged as an anode in a film forming chamber to evaporate and ionize a deposition material, In an ion plating method of performing ion plating by attaching the deposition material to a surface of a substrate disposed to face the deposition material, in an area between the hearth and the substrate, or further, the substrate is A magnetic field including a magnetic field line extending in a direction substantially perpendicular to a straight line connecting the hearth and the substrate at the shortest distance or an extension of the straight line is generated in a region including the magnetic field.
[0012]
Further, in order to realize the above-described ion plating method, the ion plating apparatus according to the present invention includes a high-density plasma generated by arc discharge toward a deposition material loaded in a hearth arranged as an anode in a film forming chamber. An ion plating apparatus for supplying a beam to evaporate and ionizing a deposition material, ion-plating the deposition material on a surface of a substrate disposed opposite to the deposition material, and performing ion plating. In a region between the substrate and the region further including the substrate, a magnetic field line extending in a direction substantially perpendicular to a straight line or an extension of the straight line when the hearth and the substrate are connected at the shortest distance is included. It has a magnetic field generating means for generating a magnetic field.
[0013]
According to the above configuration of the present invention, electrons accompanying the ionized deposition material are captured by the magnetic field to generate an electric field of a reverse bias potential with respect to the hearth, so that the collision energy of the deposition material with respect to the substrate is reduced, A film having good crystallinity and low specific resistance and small stress can be obtained. Further, since the electrons are captured by the magnetic field and do not reach the substrate, heat input to the substrate due to the electrons reaching the substrate is reduced, and a rise in the temperature of the substrate can be reduced. Therefore, the present invention is more effective when the substrate is formed of a resin having a low heat-resistant temperature.
[0014]
In this case, when the substrate material is conductive, it is conceivable that a voltage is applied to the substrate itself to generate a reverse bias positive potential electric field with respect to the hearth without employing the above-described configuration of the present invention. However, at this time, the temperature of the substrate becomes high, which is not practical.
[0015]
Further, in the ion plating method according to the present invention, further, an electric field of a reverse bias potential with respect to the hearth is generated in the substrate or in the vicinity of the substrate, and in the ion plating apparatus according to the present invention, When an electric field generating means for generating an electric field of a reverse bias potential with respect to the hearth is provided on the substrate or in the vicinity of the substrate, the collision energy of the deposition material with the substrate can be more effectively reduced. At this time, even when a reverse bias potential is applied to the substrate itself, by taking into account the balance with the magnetic field, electrons in the plasma do not collide with the substrate and can be applied to the wall of the deposition chamber via the magnetic field. Since they are collided and disappear, the temperature rise of the substrate is suppressed.
[0016]
Further, in the ion plating method according to the present invention, the magnetic field changes its direction periodically in a plane parallel to the substrate, and in the ion plating apparatus according to the present invention, the magnetic field generating unit includes: If it is configured to periodically change the magnetic field direction in a plane parallel to the, even if the course of the deposition material may be bent by J × B drift due to the potential gradient of the electric field, Since the direction of the magnetic field constantly changes, the path of the deposition material is not bent.
[0017]
At this time, the magnetic field may be an alternating magnetic field, and more preferably a rotating magnetic field.
[0018]
Further, in the ion plating apparatus according to the present invention, the electric field generating means is provided in the film forming chamber, an electrode for generating an electric field of an equipotential, and disposed between the electrode and the hearth, When a shielding portion for preventing the deposition material from colliding with the electrode is included, the deposition of the deposition material on the electrode can be prevented. Also, overheating of the electrode can be prevented.
[0019]
Further, in the ion plating method according to the present invention, the substrate is conveyed in a direction orthogonal to a direction in which the deposition material evaporates, and the magnetic field generating unit uniformly forms the deposition material attached to the substrate. It is characterized by being provided integrally with a film thickness correction plate provided for obtaining a film distribution.
[0020]
When the magnetic field generating means is specially provided, it is necessary to take into consideration that the film formation on the substrate may be hindered depending on the arrangement position, shape, etc. of the magnetic field generating means. Since the correction plate is provided integrally with the magnetic field generation means, there is no danger.
[0021]
BEST MODE FOR CARRYING OUT THE INVENTION
A preferred embodiment (hereinafter, referred to as an embodiment) of an ion plating method and apparatus according to the present invention will be described below with reference to the drawings.
[0022]
First, an ion plating apparatus according to the present embodiment will be described with reference to FIGS.
[0023]
The ion plating apparatus 10 includes a vacuum chamber 12 as a film forming chamber, a plasma gun (plasma beam generator) 14 as a plasma source for supplying a plasma beam PB into the vacuum chamber 12, and a An anode member 16 is provided to receive the plasma beam PB, and a transport mechanism 18 for appropriately moving a substrate holding member WH holding a substrate W on which a film is to be formed above the anode member 16. In addition, a film thickness correction plate 19 is provided so as to protrude from the side wall of the vacuum vessel 12 at a position where it enters between the hearth 16a and the substrate W disposed above and facing the hearth 16a. The film thickness correction plate 19 will be described in another embodiment.
[0024]
The plasma gun 14 is of a pressure gradient type, and its main body is provided on the side wall of the vacuum vessel 12. By adjusting the power supply to the cathode 14a, the intermediate electrodes 14b and 14c, the electromagnet coil 14d, and the steering coil 14e of the plasma gun 14, the intensity and distribution of the plasma beam PB supplied into the vacuum vessel 12 are controlled. Reference numeral 20a indicates an introduction path of a carrier gas composed of an inert gas such as Ar, which is a source of the plasma beam PB.
[0025]
The anode member 16 includes a hearth 16a, which is a main anode for guiding the plasma beam PB downward, and an annular auxiliary anode 16b disposed therearound.
[0026]
The hearth 16a is controlled to an appropriate positive potential, and sucks the plasma beam PB emitted from the plasma gun 14 downward. In the hearth 16a, a through hole TH is formed in a central portion where the plasma beam PB is incident, and the evaporation material 22 is loaded in the through hole TH. The deposition material 22 is a columnar or rod-shaped tablet, and is heated and sublimated by an electric current from the plasma beam PB to generate a deposition material. The hearth 16a has a structure in which the evaporation material 22 is gradually raised, and the upper end of the evaporation material 22 always projects from the through hole TH of the hearth 16a by a fixed amount.
[0027]
The auxiliary anode 16b is constituted by an annular container concentrically arranged around the hearth 16a, and contains a permanent magnet 24a and a coil 24b in the container. The permanent magnet 24a and the coil 24b are magnetic field control members, and form a cusp-shaped magnetic field immediately above the hearth 16a, whereby the direction of the plasma beam PB incident on the hearth 16a is controlled.
[0028]
The transport mechanism 18 includes a number of rollers 18b that are arranged at equal intervals in the horizontal direction in the transport path 18a and support the substrate holding member WH, and rotate the rollers 18b to move the substrate holding member WH horizontally at a predetermined speed. And a driving device (not shown) for moving. The substrate W is held by the substrate holding member WH. In this case, the substrate W may be fixedly disposed above the inside of the vacuum container 12 as shown in FIG. 2 without providing the transport mechanism 18 for transporting the substrate W.
[0029]
Reference numerals 20b and 20c indicate supply paths for supplying an atmosphere gas such as oxygen, and reference numeral 20d indicates a supply path for supplying an inert gas such as Ar to the hearth 16a. Reference numeral 20e indicates an exhaust system.
[0030]
The ion plating apparatus 10 is further provided with a magnetic field generating unit, an electric field generating unit, and a shielding unit of the present invention in a portion (indicated by an arrow A or B) surrounded by a broken line in FIG. 1 or FIG.
[0031]
The specific configuration of the magnetic field generation unit, the electric field generation unit, and the shielding unit of the present invention indicated by the arrow B in FIG. 2 will be further described with reference to FIG. The magnetic field generating means, the electric field generating means, and the shielding section of the present invention described below can be applied to the transfer-type substrate W shown in FIG. Further, if necessary, the electric field generating means or the shielding unit can be omitted.
[0032]
The ion plating apparatus 10 of FIG. 3 shows a state where the ion plating apparatus of FIG. 2 is viewed from the right side in FIG. That is, the plasma gun 14 is located above the front side of the paper surface of FIG.
[0033]
In the ion plating apparatus 10, a pair of electromagnets 26 a and 26 b for generating a magnetic field are provided as magnetic field generating means, facing each other, outside the portion of the vacuum vessel 12 where the substrate W is horizontally arranged. A voltage is applied to the electromagnets 26 a and 26 b by a power source (not shown) so that different magnetic poles are generated in opposite directions, and a magnetic field having magnetic lines of force parallel to the substrate W is generated around the substrate W.
[0034]
Inside the vacuum vessel 12, a pair of electrodes 28a and 28b are provided as electric field generating means at positions facing each other across the substrate W. The electrodes 28a, 28b are simultaneously located between the electromagnets 26a, 26b. A voltage is applied to the electrodes 28a and 28b by the bias adjustment power supply 30, and an equipotential electric field having the potential of the electrodes is generated in a space along the magnetic field lines of the magnetic field.
[0035]
A pair of shielding plates 32a, 32b is provided as a shielding part below the electrodes 28a, 28b in FIG. 3 and between the electrodes 28a, 28b and the hearth 16a.
[0036]
An ion plating method using the ion plating apparatus 10 configured as described above will be further described with reference to FIG.
[0037]
First, the vapor deposition material 22 is attached to the through hole TH of the hearth 16a arranged at the lower part of the vacuum vessel 12. Here, the deposition material 22 is, for example, SiO ₂ .
[0038]
On the other hand, the substrate W is arranged at a position above and opposite the hearth 16a. Here, the substrate W may be a conductive metal substrate or the like, or may be an insulating plastic substrate or an inorganic substrate. In the case of using the latter insulating substrate, it is preferable that the substrate is grounded to prevent electrification which may be caused by deposition of ions of a deposition material on the substrate, from the viewpoint of preventing foreign substances from adhering to the substrate.
[0039]
Next, an appropriate process gas is introduced into the vacuum chamber 12 according to the film forming conditions.
[0040]
A DC voltage is applied between the cathode 14a and the hearth 16a so that the cathode 14a of the plasma gun 14 has a potential of, for example, about -40V, and the hearth 16a has a potential of, for example, about + 20V. At this time, the wall 12a of the vacuum vessel 12 is grounded (see FIG. 3).
[0041]
In addition, a voltage is applied to the electromagnets 26a and 26b to generate a magnetic field such that the lines of magnetic force parallel to the substrate W have a magnetic flux density of, for example, about 5 to 10 mT, as schematically shown in FIG. The magnetic field is generated around the substrate W and especially near the surface of the substrate W on the side facing the hearth 16a. On the other hand, a voltage is applied to the electrodes 28a and 28b so as to have a potential of, for example, about + 10V. As a result, an electric field having an equipotential of about +10 V is generated near the surface of the substrate W on the side facing the hearth 16a along the lines of magnetic force. When the deposition material 22 is ITO, the potential of the electrode 28a is preferably set to, for example, about +15 V or less. When the deposition material 22 is ZnO, the potential of the electrode 28a is set to, for example, about +30 V. .
[0042]
Then, a discharge is generated between the cathode 14a of the plasma gun 14 and the hearth 16a, thereby generating a plasma beam PB. The plasma beam PB reaches the hearth 16a by being guided by a magnetic field determined by the steering coil 14 and the permanent magnet 24a in the auxiliary anode 16b. At this time, since the argon gas is supplied around the vapor deposition material 22, the plasma beam PB is easily drawn to the hearth 16a.
[0043]
The deposition material 22 exposed to the plasma is gradually heated. When the evaporation material 22 is sufficiently heated, the evaporation material 22 sublimates, and the evaporation material evaporates (exits). The deposition material is ionized by the plasma beam PB and adheres (incidents) to the substrate W.
[0044]
At this time, the small-mass electrons accompanying the ions of the deposition material in the plasma are captured by the magnetic field before reaching the substrate W. On the other hand, ions of the deposition material having a large mass reach the substrate W through the magnetic field. As a result, an electric field having a reverse bias potential with respect to the hearth 16a, for example, about several volts, is generated in the space where the magnetic field is generated only by the above-described behavior of the electrons. The kinetic energy at the time of collision is reduced (reduced) as compared with the case without a magnetic field.
[0045]
In the vicinity of the substrate W, particularly in the vicinity of the surface of the substrate W on the side facing the hearth 16a, an electric field having a potential which is a reverse bias with respect to the hearth 16a is further generated. Kinetic energy at the time of collision is greatly reduced (reduced).
[0046]
When a magnetic field is provided only in a certain direction as shown in FIG. 4, the path of the deposition material may be bent by J × B drift caused by a potential gradient of the electric field. Let it.
[0047]
Thereby, the ions of the vapor deposition material having an excessive kinetic energy do not collide with the substrate W during the film formation process, and the ions of the vapor deposition material controlled to have a suitable kinetic energy adhere to the substrate and the film formation proceeds. Therefore, a film of good quality with few crystal defects, low specific resistance, and low stress can be formed.
[0048]
At this time, the ascending deposition material is suppressed from adhering to the electrodes 28a, 28b by the shielding plates 32a, 32b provided below the electrodes 28a, 28b.
[0049]
Further, according to the ion plating method and apparatus according to the above-described embodiment, the ionized deposition material is accelerated by the large electric field of about +20 V from the hearth 16a in the same manner as in the normal case. Similarly, film formation can be performed at a high film formation rate.
[0050]
By controlling the magnetic field above the hearth 16a by the permanent magnet 24a and the coil 24b, it is possible to control the flight direction of the deposition material, so that the plasma activity distribution above the hearth 16a and the reactivity of the substrate W The film-forming rate distribution on the substrate W can be adjusted according to the distribution, and a thin film with uniform film quality can be obtained over a wide area.
[0051]
Next, modified examples of the magnetic field generation unit, the electric field generation unit, and the shielding unit of the present invention will be described. Note that, in each modified example described below, the same components as those of the above-described embodiment are denoted by the same reference numerals as those of the embodiment, and overlapping descriptions will be omitted.
[0052]
In the first modified example shown in FIG. 5, a U-shaped iron core 34 is arranged so as to surround the substrate W from above so as to expose only the lower surface of the substrate W. A coil 36 is wound around the linear portion 34a of the iron core 34.
[0053]
When a voltage is applied to the iron core 34, an equipotential electric field is generated around the substrate W. That is, the iron core 34 has a role of an electrode as an electric field generating means as well as a role of an iron core of the electromagnet.
[0054]
When a voltage is applied from a power supply (not shown) to the coil 36, a magnetic field is generated between the two end portions 34 b and 34 c of the iron core 34, in other words, below the substrate W. That is, the electromagnet constituted by the coil 36 and the iron core 34 functions as a magnetic field generating unit.
[0055]
In the first modification, the same operation and effect as those of the present embodiment can be obtained.
[0056]
In the second modified example shown in FIG. 6, a pair of electrodes 28a and 28b are provided at positions facing each other across the substrate W in the plane direction of the substrate as in the present embodiment. When a voltage is applied to the electrodes 28a and 28b, an electric field having an equal potential is generated around the substrate W.
[0057]
Above the vacuum container 12, a pair of electromagnets 38a and 38b are arranged. When a voltage is applied from a power supply (not shown), magnetic fields are generated around the substrate W with the surfaces of the electromagnets 38a and 38b facing the substrate W as mutually different magnetic poles.
[0058]
Also in the second modification, the same operation and effect as those of the present embodiment can be obtained.
[0059]
In the third modification shown in FIG. 7, the above-described film thickness correction plate 19 also serves as a magnetic field generation unit. That is, the magnetic field generation means is provided integrally with the film thickness correction plate 19.
[0060]
The film thickness correction plate adheres to the substrate W conveyed by the substrate holding member WH by interfering with the movement of the vapor deposition material in order to obtain a uniform film formation distribution of the vapor deposition material adhered to the substrate W being conveyed. The primary role is to control the amount of deposited material to be deposited.
[0061]
However, the film thickness correction plate 19 of the third modified example is provided with magnet parts 21, 23, 25 divided into three in the direction of travel of the substrate, and each of the magnet parts 21, 23, 25 has a plurality of permanent magnets 21a. To 21n, 23a to 23n, and 25a to 25n are arranged. In this case, the film thickness correcting plate 19 may have a structure in which the magnet portions 21, 23, and 25 are connected by a connecting member, and the magnet portions 21, 23, and 25 are separated on a commonly used film thickness correcting plate. The formed structure may be used. In FIG. 7, reference numeral 27 denotes an opening formed in the film thickness correction plate portion between the magnet portions 21, 23, and 25 for adjusting the area of the film thickness correction plate 19 and passing the lines of magnetic force.
[0062]
In the third modification, the same operation and effect as those of the present embodiment can be obtained. When the magnetic field generating means is specially provided, it is necessary to consider that the film formation of the substrate W may be hindered depending on the arrangement position, shape, and the like of the magnetic field generating means. Since the film thickness compensating plate 19 also serves as the magnetic field generating means and does not require an occupied area for providing the magnetic field generating means particularly, such consideration is not necessary.
[0063]
In the third modification, the outer shape of the film thickness correction plate 19 is formed to have a size that covers the entire surface of the substrate W while considering a desired shape in consideration of the film formation distribution state of the substrate W. It is preferable to dispose each magnet unit over the entirety because a magnetic field that covers the entire surface of the substrate W can be formed.
[0064]
In the embodiment and the first to third modifications described above, the magnetic field generating means may generate a magnetic field in one direction, or may generate an alternating magnetic field. Although it is good, it is more preferable to generate a rotating magnetic field. In addition, it does not exclude that the electromagnet and the permanent magnet are used interchangeably as the magnetic field generating means.
[0065]
【The invention's effect】
According to the ion plating method of the present invention, a high-density plasma beam is supplied by an arc discharge toward a deposition material loaded on a hearth arranged as an anode in a film forming chamber to vaporize a deposition material to ionize the material. Then, in an ion plating method of performing ion plating by attaching a deposition substance to a surface of a substrate disposed opposite to a deposition material, in a region between the hearth and the substrate, or further including a substrate In the region, a magnetic field including a magnetic field line extending in a direction substantially perpendicular to a straight line or an extension of the straight line when the hearth and the substrate are connected at the shortest distance is generated, and in the ion plating apparatus according to the present invention, A high-density plasma beam by arc discharge is supplied to the deposition material loaded on the hearth placed as an anode in the film chamber to evaporate the deposition material. On, in an ion plating apparatus that performs ion plating by attaching a vapor deposition substance to the surface of a substrate placed opposite to the vapor deposition material, in an area between the hearth and the substrate, or further including a substrate The magnetic field generating means for generating a magnetic field including a magnetic field line extending in a direction substantially perpendicular to a straight line or an extension of the straight line when the hearth and the substrate are connected at the shortest distance. Is reduced, and a film having good crystallinity and low specific resistance and small stress can be obtained.
[0066]
According to the ion plating method of the present invention, further, an electric field of a reverse bias potential with respect to the hearth is generated in the substrate or in the vicinity of the substrate, and according to the ion plating apparatus of the present invention, Further, since an electric field generating means for generating an electric field of a reverse bias potential with respect to the hearth is provided on the substrate or in the vicinity of the substrate, the collision energy of the deposition material with the substrate can be more effectively reduced.
[0067]
According to the ion plating method of the present invention, the direction of the magnetic field is periodically changed in a plane parallel to the substrate, and according to the ion plating apparatus of the present invention, the magnetic field generating means Since the direction of the magnetic field is periodically changed in a plane parallel to the substrate, the path of the deposition material is not bent.
[0068]
Further, according to the ion plating apparatus of the present invention, the electric field generating means is provided in the film forming chamber, and is disposed between the electrode and the hearth, the electrode generating an electric field having the same potential, and the Since a shielding portion for preventing collision with the electrode is included, deposition of a deposition substance on the electrode can be prevented.
[0069]
Further, according to the ion plating method of the present invention, the substrate is transported in a direction orthogonal to the evaporation direction of the deposition material, and the magnetic field generation unit controls the uniform film formation distribution of the deposition material attached to the substrate. It is not necessary to consider the effect of providing the magnetic field generating means on the film formation on the substrate, since the film also serves as a film thickness correction plate provided for obtaining the thickness.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining a schematic configuration of an ion plating apparatus according to an embodiment.
FIG. 2 is a partial view of an ion plating apparatus according to an embodiment of the present invention, which is different from that of FIG.
FIG. 3 is a partial view of the ion plating apparatus according to the embodiment shown in FIG. 2, showing the configuration of a magnetic field generating unit, an electric field generating unit, and a shielding unit.
FIG. 4 is a schematic diagram for explaining the operation of the device of FIG.
FIG. 5 is a partial view of an apparatus showing a configuration of a magnetic field generation unit, an electric field generation unit, and a shielding unit according to a first modified example.
FIG. 6 is a partial view of an apparatus showing a configuration of a magnetic field generation unit, an electric field generation unit, and a shielding unit according to a second modified example.
FIG. 7 is a partial view of an apparatus showing a configuration of a magnetic field generation unit according to a third modification.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Ion plating apparatus 12 Vacuum container 14 Plasma gun 14a Cathode 14b, 14c Intermediate electrode 14d Electromagnetic coil 14e Steering coil 16 Anode member 16a Hearth 16b Auxiliary anode 18 Transport mechanism 19 Film thickness correction plates 21, 23, 25 Magnet part 22 Evaporation material 21a to 21n, 24a, 23a to 23n, 25a to 25n Permanent magnets 24b, 36 Coils 26a, 26b, 38a, 38b Electromagnets 28a, 28b Electrode 30 Bias adjustment power supplies 32a, 32b Shield plate 34 Iron core

Claims (8)

A high-density plasma beam by arc discharge was supplied to a deposition material loaded in a hearth arranged as an anode in a film forming chamber to evaporate and ionize a deposition material, and was disposed to face the deposition material. In an ion plating method of performing ion plating by attaching the deposition material to the surface of a substrate,
In a region between the hearth and the substrate, or further in a region including the substrate, in a direction substantially perpendicular to a straight line or an extension of the straight line when the hearth and the substrate are connected at the shortest distance. An ion plating method characterized by generating a magnetic field including a line of extending magnetic force. 2. The ion plating method according to claim 1, further comprising: generating an electric field having a reverse bias potential with respect to the hearth at or near the substrate. 3. The ion plating method according to claim 2, wherein the direction of the magnetic field is periodically changed in a plane parallel to the substrate. A high-density plasma beam by arc discharge was supplied to a deposition material loaded in a hearth arranged as an anode in a film forming chamber to evaporate and ionize a deposition material, and was disposed to face the deposition material. In an ion plating apparatus for performing ion plating by attaching the deposition material to the surface of the substrate,
In a region between the hearth and the substrate, or in a region further including the substrate, in a direction substantially perpendicular to a straight line or an extension of the straight line when the hearth and the substrate are connected at the shortest distance. An ion plating apparatus comprising a magnetic field generating means for generating a magnetic field including a magnetic field line extending. 5. The ion plating apparatus according to claim 4, further comprising an electric field generating means for generating an electric field having a reverse bias potential with respect to said hearth at or near said substrate. The electric field generating means is provided in the film forming chamber, and is provided between the electrode and the hearth for generating an electric field of an equipotential, and a shielding unit for preventing the deposition material from colliding with the electrode. The ion plating apparatus according to claim 5, comprising: 7. The ion plating apparatus according to claim 6, wherein the magnetic field generating means is configured to periodically change the magnetic field direction in a plane parallel to the substrate. The substrate is transported in a direction orthogonal to the evaporation direction of the deposition material,
8. The magnetic field generating means according to claim 4, wherein said magnetic field generating means is provided integrally with a film thickness correcting plate provided for obtaining a uniform film forming distribution of the vapor deposition material attached to said substrate. The ion plating apparatus according to claim 1.

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