JP4060507B2 - Substrate transfer apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate transfer device and a method, where foreign objects can be restrained from adhering to a mask in a preparatory chamber and a robot chamber. SOLUTION: A substrate transfer device 20 is composed of a robot chamber 6 as a closed vessel and a preparatory chamber as a closed vessel, and the robot chamber 6 and the preparatory chamber 4 are connected together with a gate valve 2. The robot chamber 6 is connected to an electron beam drawing device main body 30 with a gate valve 1. A movable vacuum robot 5 provided with a stage 12 on which a mask 7 transferred from the preparatory chamber 4 is placed is installed inside the robot chamber 6. A surface electrometer 9 which measures the surface potential of the mask 7 and a static eliminator which eliminates static electricity from the surface of the mask 7 are provided in the preparatory chamber 4, and the surface electrometer 9 and the static eliminator 10 are connected to a controller 11 which controls them.

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate transport apparatus and a substrate processing method for transporting a substrate whose surface is to be processed, and in particular, transports a substrate such as a mask on which a desired pattern is drawn into an electron beam lithography apparatus where drawing is performed. The present invention relates to a substrate transfer apparatus and a substrate processing method.
[0002]
[Prior art]
For example, in the manufacture of semiconductor devices, a lithography technique is used in which a mask pattern in which various patterns are formed on a quartz substrate is transferred onto the wafer with light. As a means for forming the mask pattern, an electron beam drawing apparatus is used.
[0003]
The electron beam lithography system forms a pattern on a mask by shaping and reducing an electron beam emitted from an electron gun placed in a vacuum into a desired shape, and repeatedly deflecting and irradiating according to arbitrary pattern data. Go.
[0004]
In recent years, with the progress of higher integration of semiconductor devices, various patterns constituting the semiconductor device have been further miniaturized and integrated, and the pattern data has become enormous with the miniaturization and integration. If this pattern size decreases, the pattern data amount increases. That is, it is expected that the pattern will be densified and the throughput of the electron beam lithography apparatus will be slow.
[0005]
However, since it is not easy to improve the performance of the electron beam lithography apparatus itself, it is conceivable to improve the yield of the mask. That is, the throughput of the entire mask production system is ensured by reducing pattern defects and increasing the number of non-defective masks.
[0006]
Before the pattern is drawn on the mask substrate with the electron beam lithography system, if there is dust or the like in the beam exposure part on the mask substrate coated with the photosensitive agent, the shadow part becomes the unexposed part. Pattern defects will occur.
[0007]
This pattern defect is patterned by development and etching after drawing, and the defect location and the number of defects are known by a defect inspection apparatus. Based on the information of the defect inspection device, if there are few pattern defect parts, it is possible to correct the pattern using a correction device. For this reason, a mask substrate having a pattern defect may be used as a defective mask, and the mask may be manufactured again.
[0008]
Therefore, in order to effectively improve the yield, dust such as dust does not adhere to the exposed portion after the photosensitive agent is applied on the substrate serving as a mask and before the pattern is drawn with the electron beam. It is necessary to.
[0009]
In addition to dust and dust floating in the air, what can be considered as dust includes organic matter such as skin that peels off when a human handles the mask, and metal powder generated from the sliding portion of the apparatus.
[0010]
Therefore, conventionally, the cleanliness of a clean room in which an apparatus for mask production is installed is changed from about class 100 (0.3 [μm] dust 100 / m ³ ) to class 10 (0.3 [μm] dust 10). It has been improved to the number of pieces / m ³ ) or less.
[0011]
In addition, after the mask coated with the photosensitizer is applied to a foreign substance inspection device and it is confirmed that there is no dust on the mask surface, before setting the mask on the drawing apparatus, light is applied to the mask drawing surface obliquely to remove foreign substances. An oblique light inspection was performed to confirm that there was no dust, and it was confirmed that there was no dust after the photosensitive agent was applied to the mask.
[0012]
[Problems to be solved by the invention]
In recent years, in a semiconductor device equivalent to 1GDRAM in which a pattern of 0.15 [μm] or less is required on a wafer, when the mask pattern is transferred to the wafer, the pattern is reduced to, for example, 1/4, The required mask pattern size is 0.6 [μm] or less.
[0013]
Therefore, class 10 (0.3 [μm] dust 10 / m ³ ) is insufficient, and class 1 (0.1 [μm] dust 10 / m ³ ) to class 0.1 (0. An environment of about 1 [μm] dust / m ³ ) is required.
[0014]
In order to realize this environment, there is a local cleaning technique. This is not the idea of improving the cleanliness of the entire conventional clean room, but the idea of keeping only the target minimum environment clean, which is very advantageous even when considering the running costs of power and consumables. is there.
[0015]
In addition, by using a highly sensitive and highly accurate foreign matter inspection apparatus and eliminating work such as oblique light inspection that involves humans, it is possible to minimize the possibility of foreign matter adhering to the mask.
[0016]
However, since the electron beam drawing apparatus needs to draw the mask in vacuum, it has a spare chamber that repeats vacuuming and atmosphericization, and is separated by a vibration isolator to eliminate external vibration. ing.
[0017]
Accordingly, since it is difficult to locally clean the space between the spare chamber and the external mask supply / collection device, a mask coated with a photosensitive agent is transferred while the mask is being transferred from the external mask supply / collection device to the spare chamber. There was a risk of foreign matter adhering to the drawing surface.
[0018]
In addition, foreign substances may be mixed in the spare chamber while the mask is being carried into and out of the spare chamber, and when the spare chamber is brought into a desired vacuum state, there is a risk that it will rise up and adhere to the drawing surface of the mask. .
[0019]
Therefore, a sample loading / unloading method and a sample loading / unloading support apparatus as described in JP-A-11-274035 have been proposed.
[0020]
However, during vacuum evacuation, friction occurs between the air flow and the mask surface, and after evacuation, the mask surface is charged. If the mask surface is charged and transported in a vacuum, there is a risk that minute particles adhering to the inner wall surface of the vacuum container and wear generated from a sliding portion in the vacuum may be adsorbed.
[0021]
Accordingly, the present invention has been made in view of the above-described conventional problems, and is a substrate that transports a mask to an electron beam drawing apparatus main body that draws a pattern on the mask without causing foreign matter to adhere to the surface on which the pattern is drawn. It is an object of the present invention to provide a transport apparatus and method.
[0022]
[Means for Solving the Problems]
In order to achieve the above object, the substrate transfer apparatus of the present invention is capable of carrying in and out a substrate whose surface is processed, a container capable of exhausting an internal space, and a container provided in the container, wherein at a reduced pressure by evacuating the interior space comprises a charge removing unit for charge elimination potential of the loaded surface of the substrate into the container.
[0023]
Next, the substrate transfer apparatus of the present invention is capable of carrying in and out a substrate whose surface is to be processed, and a first container capable of exhausting (aeration and vacuuming) the internal space; A first valve in contact with one container and a second valve in contact with a processing chamber in which the internal space is evacuated, and opening and closing the first valve from the first container to A substrate transfer apparatus comprising: a second container that carries in and carries out the loaded substrate into the processing chamber by opening and closing the second valve; and a second container in which an internal space is exhausted. And a charge removal unit that removes the potential of the substrate surface carried into the first container when the internal space is evacuated and decompressed .
[0024]
Next, the substrate processing method of the present invention, the substrate in which the surface is treated, a step of transporting the first container, the steps you vacuum evacuating the first vessel, in the step of the decompression And removing the charge from the substrate surface, and transporting the substrate to a second container connected to the first container after the charge removing process.
[0025]
DETAILED DESCRIPTION OF THE INVENTION
The configuration of the embodiment of the present invention will be described below with reference to the drawings.
[0026]
1 to 3 show a first embodiment of a substrate transfer apparatus of the present invention.
[0027]
FIG. 1 is a partially cutaway cross-sectional view of a first embodiment of the present invention. A substrate transfer device 20 functions as a robot chamber 6 (second container) that is a sealed container and a load lock chamber that is a sealed container. The robot chamber 6 and the spare chamber 4 are connected by a gate valve 2 (first valve). If the gate valve 2 is in the open state, the robot chamber 6 and the spare chamber 4 communicate with each other, and if the gate valve 2 is in the closed state, the containers are isolated by the gate valve 2. The robot chamber 6 is always in a vacuum state during operation, and the spare chamber 4 has an exhaust system (not shown), and can be selected between an atmospheric pressure and a vacuum state as required.
[0028]
An electron beam drawing apparatus main body 30 is in close contact with a gate valve 1 (second valve) provided on a surface of the robot chamber 6 opposite to a surface on which the gate valve 2 is provided. The gate valve 1 holds the inside of the electron beam drawing apparatus main body 30 in a vacuum state. Here, since the robot chamber 6 is always in a vacuum state during operation of the electron beam lithography apparatus main body 30, the robot chamber 6 is maintained in a substantially similar vacuum state, and the robot chamber 6 is provided as a buffer for the spare chamber 4. ing.
[0029]
In the robot chamber 6, there is provided a vacuum robot 5 having a stage 12 on which a mask 7 (substrate) transferred from the preliminary chamber 4 is placed. The vacuum robot 5 is movable in a predetermined direction, and conveys the mask 7 from the preliminary chamber 4 to a stage (not shown) on which the mask provided in the electron beam drawing apparatus main body 30 is placed.
[0030]
The vacuum robot 5 fixes and holds the mask 7 on the hand 12 in a vacuum. A motor 13 serving as a drive source for the vacuum robot 5 is provided outside the robot chamber 6 and is mechanically connected to the vacuum robot 5.
[0031]
A gate valve 3 is provided on the surface of the preliminary chamber 4 facing the gate valve 2, and the mask 7 is transferred from the gate valve 3. In the preliminary chamber 4, the mask 7 is placed on a stage (not shown).
[0032]
FIG. 2 is a side view of the vicinity of the mask 7 in the preliminary chamber 4, and a plurality of contact portions 8 that contact a part of the surface of the mask 7 are provided in the preliminary chamber 4. The contact portion 8 serves as a ground contact for grounding the mask. The contact portion 8 is urged and brought into contact with the mask 7 placed in the preliminary chamber 4 by a spring (not shown) or the like, and can be electrically connected to the mask 7. The tip of the contact portion 8 has a triangular cross-sectional shape so as to ensure conduction with the mask 7, and the surface in contact with the mask 7 is a hypotenuse (slope).
[0033]
The preliminary chamber 4 has a surface potential meter 9 (potential measuring unit) at a position where the potential of the surface of the mask 7 can be measured in contact and a position where the potential charged on the surface of the mask 7 can be removed. In addition, a static elimination device 10 (static elimination unit) for eliminating the potential from the surface of the charged mask 7 is provided. The surface potentiometer 9 and the static eliminator 10 are electrically connected to a controller 11 for controlling the operation of the devices 9 and 10, and the controller 11 is provided outside the preliminary chamber 4. Here, the surface potential meter 9 can be installed as necessary, and only the static eliminator 10 may be provided in the spare chamber 4.
[0034]
The preliminary chamber 4, the robot chamber 6, and the electron beam drawing apparatus main body 30 are provided with means for measuring the internal vacuum state (degree of vacuum) and a vacuuming device such as a pump for extracting the internal air.
[0035]
The operation of the first embodiment having such a configuration will be described with reference to the flowchart of FIG.
[0036]
When the mask 7 is transferred from the substrate transfer device 20 to the electron beam lithography apparatus main body 30 (from step (1) to step (13)), or when transferred from the main body 30 to the outside of the preliminary chamber 4 (from step (14)). Step (up to step (17)) will be described.
[0037]
(1) Confirm that the gate valve 2 is closed and the inside of the preliminary chamber 4 is at atmospheric pressure.
[0038]
(2) After the gate valve 2 is closed, if the inside of the preliminary chamber 4 is atmospheric pressure, the gate valve 3 is opened and the mask 7 is carried into the preliminary chamber 4 using a robot arm (not shown). (Transport process).
[0039]
If the gate valve 2 is in an open state, the gate valve 2 is closed. If the reserve chamber 4 is not at atmospheric pressure, the inside is leaked to bring air into the atmospheric pressure, and then the mask 7 is carried into the reserve chamber 4.
[0040]
(3) After the mask 7 is placed on the stage (not shown) in the preliminary chamber 4 by the robot arm, the gate valve 3 is closed.
[0041]
(4) The two contact portions 8 are brought into contact with the mask 7 to establish conduction. At this time, the resistance between the contact portions 8 is measured by a resistance measuring instrument (not shown) by using the two contact portions 8 provided for grounding, and it is confirmed that the resistance value is equal to or less than a predetermined resistance value. Specifically, the contact portion 8 contacts the chromium layer 14 formed between the substrate 17 of the mask 7 and the resist film 15.
[0042]
If the mask 7 is below the predetermined resistance value, the process proceeds to the next step (5). If the mask 7 is not below the predetermined resistance value, the mask 7 is grounded by the contact portion 8 and waits until the resistance value is below the desired resistance value.
[0043]
(5) The preliminary chamber 4 is evacuated and decompressed (step of decompressing).
[0044]
(6) While being evacuated and evacuated, the surface potential meter 9 measures the potential of the surface of the mask 7 at least once (step of measuring potential). The potential measurement may be performed a plurality of times at an arbitrary timing.
[0045]
(7) The measured potential is sent to the control unit 11. The control unit 11 compares the measured potential with a preset reference potential. If the measured potential is higher than the reference potential, the controller 11 instructs the static eliminator 10 to neutralize the mask 7 so as to be equal to or lower than the reference potential while the preliminary chamber 4 is exhausted ( Step of neutralizing).
[0046]
The static eliminator 10 is composed of a pair of electrodes, and discharge occurs when a predetermined voltage is applied between the electrodes. When the plasma, ions, etc. generated by this discharge collide with the mask 7, the mask 7 is neutralized.
[0047]
Here, the preset reference potential refers to a potential at which the mask 7 cannot substantially adhere impurities such as dust existing in the spare chamber 4 under atmospheric pressure, and the surface potential of the mask 7 is substantially “ In the case of “+”, the reference voltage has a value of “+”, and when the surface potential of the mask 7 is “−”, the value of “−” is taken. Here, making the surface potential of the mask substrate 7 equal to or lower than the reference voltage means that the absolute value of the surface potential of the mask substrate 7 is taken and the absolute value is equal to or smaller than (within) the absolute value of the reference potential. Further, the reference potential differs depending on the type of resist applied to the mask 7, and a plurality of reference potentials are stored in the control unit 11.
[0048]
The static eliminator 10 continues to operate until the reference potential differs depending on the type of resist stored in advance, and while the static eliminator 10 is in operation, the surface potential meter 9 continues to measure the potential of the mask 7 to be below a predetermined value. If it becomes, it stops automatically. Even if the measured potential is equal to or lower than the reference potential, if the user determines that static elimination is necessary, the electrometer 9 can be operated to operate the static elimination device 10 for a predetermined time. It is also possible not to operate the static eliminator 10 for a mask in which the type of resist is not recorded.
[0049]
(8) After completion of static elimination, it is confirmed that the gate valve 1 is closed, and if it is closed, the gate valve 2 is opened. If the gate valve 1 is open, the gate valve 1 is closed and the gate valve 2 is opened.
[0050]
(9) After the gate valve 2 is opened, the mask 7 is carried into the robot chamber 6 from the preliminary chamber 4 by the hand 12 (step of transporting the substrate). The robot 5 provided with the hand 12 is given a driving force by a motor 13.
[0051]
(10) After the mask 7 is grasped by the hand 12 and moved to a predetermined position in the robot chamber 6, the gate valve 2 is closed. Vacuuming is performed until the degree of vacuum in the robot chamber 6 is substantially the same as the degree of vacuum of the electron beam drawing apparatus main body 30.
[0052]
(11) After the robot chamber 6 reaches substantially the same degree of vacuum as the electron beam drawing apparatus main body 30, the gate valve 1 is opened, and the robot 5 is driven from the robot chamber 6 to draw the electron beam. The mask 7 is carried out into the apparatus main body 30.
[0053]
(12) After unloading from the robot chamber 6, the gate valve 1 is closed, and a desired pattern is drawn on the mask 7 by the electron beam drawing apparatus main body 30.
[0054]
(13) After the drawing is completed, the gate valve 1 is opened, the processed mask 7 is gripped by the hand 12 and carried into the robot chamber 6.
[0055]
(14) After carrying the mask 7 into the robot chamber 6, the gate valve 1 is closed, the gate valve 2 is opened, and the mask 7 is carried out to the spare chamber 4.
[0056]
(15) The mask 7 carried into the preliminary chamber 4 is taken out by the robot arm (not shown) to the outside of the preliminary chamber 4 after the gate valve 2 is closed and the gate valve 3 is opened.
[0057]
(16) After the processed mask 7 is taken out from the preliminary chamber 4 and placed in a storage case (not shown) for storing the mask 7, a new unprocessed mask is moved to a predetermined position in the preliminary chamber 4. Carry in. Return to step (1).
[0058]
In the first embodiment as described above, the static electricity removing device 10 removes the potential from the surface of the mask 7 by the static eliminator 10 to prevent adhesion of foreign matters (particles) due to static electricity generated during evacuation to the drawing surface of the mask 7 surface (resist film 15). Therefore, the reliability of the mask can be improved and the productivity can be improved.
[0059]
Next, the configuration of the second embodiment of the present invention will be described with reference to FIG.
[0060]
Note that in the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.
[0061]
A feature of the second embodiment is that instead of the mask 7, a jig 19 formed of a material charged to a potential of “+” from the surface of the mask 7 is conveyed, and the spare chamber 4, the robot chamber 6, and the electron beam are conveyed. This is to remove foreign substances adhering to the inner wall of the drawing apparatus main body 30.
[0062]
FIG. 4 is a partially cutaway cross-sectional view of the second embodiment. Is jig 19 or at least a part of jig 19 charged to a potential of “+” with respect to the surface of mask 7 coated with resist? A substance that is charged to substantially the same potential is used and formed.
[0063]
Specifically, the jig 19 is made of quartz glass, a polyamide-based synthetic polymer such as nylon (trade name), or aluminum, and the size thereof is approximately the same as that of the mask 7.
[0064]
The operation of the second embodiment having such a configuration will be described.
[0065]
The jig 19 is transported to the spare chamber 4, the robot chamber 6, and the main body 30 at least once every predetermined number of times (number of sheets) of the mask 7, or even when operated by the user. You can also. The jig 19 is preferably conveyed at least once when the operation of the electron beam drawing apparatus main body 30 is started.
[0066]
(1) Confirm that the gate valve 2 is closed and the inside of the preliminary chamber 4 is at atmospheric pressure.
[0067]
(2) After the gate valve 2 is closed, if the inside of the spare chamber 4 is at atmospheric pressure, the gate valve 3 is opened and the jig 19 is moved into the spare chamber 4 using a robot arm (not shown). Carry in.
[0068]
If the gate valve 2 is in an open state, the gate valve 2 is closed. If the reserve chamber 4 is not at atmospheric pressure, the inside is leaked and air is drawn into the atmospheric pressure, and then the jig 19 is carried into the reserve chamber 4.
[0069]
(3) After the jig 19 is placed on the stage (not shown) in the preliminary chamber 4 by the robot arm, the gate valve 3 is closed.
[0070]
(4) The preliminary chamber 4 is evacuated until the degree of vacuum is substantially the same as that of the robot chamber 6.
[0071]
(5) Confirm that the gate valve 1 is closed, and if it is closed, open the gate valve 2. If the gate valve 1 is open, the gate valve 1 is closed and the gate valve 2 is opened.
[0072]
(6) After the gate valve 2 is opened, the jig 19 is carried from the spare chamber 4 to the robot chamber 6 by the hand 12. The robot 5 provided with the hand 12 is given a driving force by a motor 13.
[0073]
(7) After the jig 19 is gripped by the hand 12 and moved to a predetermined position in the robot chamber 6, the gate valve 2 is closed. Vacuuming is performed until the degree of vacuum in the robot chamber 6 is substantially the same as the degree of vacuum of the electron beam drawing apparatus main body 30.
[0074]
(8) After the robot chamber 6 reaches substantially the same degree of vacuum as the electron beam drawing apparatus main body 30, the gate valve 1 is opened, and the robot 5 is driven from the robot chamber 6 to draw the electron beam. The jig 19 is carried out into the apparatus main body 30.
[0075]
(9) After unloading from the robot chamber 6, the gate valve 1 is closed, and the jig 19 is placed on standby in the electron beam drawing apparatus main body 30 for a predetermined time.
[0076]
(10) After completion of the standby, the gate valve 1 is opened, the processed jig 19 is gripped by the hand 12 and carried into the robot chamber 6.
[0077]
(11) After carrying the jig 19 into the robot chamber 6, the gate valve 1 is closed, the gate valve 2 is opened, and the jig 19 is carried out to the spare chamber 4.
[0078]
(12) The jig 19 carried into the spare chamber 4 is taken out by the robot arm (not shown) outside the spare chamber 4 with the gate valve 2 closed and the gate valve 3 opened.
[0079]
(13) After the jig 19 is taken out from the preliminary chamber 4 and placed in a jig storage case (not shown) for storing the jig 19, a new unprocessed mask is placed in a predetermined position in the preliminary chamber 4. Carry in. After carrying in, it returns to the process (1) of 1st Embodiment.
[0080]
In the second embodiment as described above, the foreign matter adhering to the inner walls of each chamber is adsorbed to the jig 19 by the electrostatic force generated during evacuation in the spare chamber 4, the robot chamber 6, and the electron beam drawing apparatus main body 30. By doing so, the cleanliness of each room can be improved. Therefore, it is possible to suppress the adhesion of foreign substances that may adhere to the mask 7 transported in each room, and to improve the reliability of the mask 7.
[0081]
Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, the surface potential meter may be measured after the mask is grounded by the contact portion and the preliminary chamber is evacuated to a predetermined degree of vacuum if the potential of the mask surface can be measured. Further, the static eliminator may be operated before or before evacuating the spare chamber as long as the static eliminator can be eliminated from the mask. The substrate transfer device is connected to the main body of the electron beam lithography apparatus. However, as long as it is necessary to suppress the adhesion of foreign matters to the substrate surface when processing the substrate surface, a vapor phase growth apparatus, a vapor deposition apparatus, etc. It can also be implemented by connecting to.
[0082]
【The invention's effect】
As described above, according to the present invention, adhesion of particles and the like to the substrate surface can be suppressed, and the reliability of the substrate can be improved.
[Brief description of the drawings]
FIG. 1 is a partially cutaway cross-sectional view of a first embodiment of a substrate transfer apparatus of the present invention.
FIG. 2 is a side view of the vicinity of the mask of the first embodiment of the substrate transfer apparatus of the present invention.
FIG. 3 is a flowchart of a substrate transfer method according to the present invention.
FIG. 4 is a partially cutaway cross-sectional view of a second embodiment of a substrate transfer apparatus of the present invention.
[Explanation of symbols]
1, 2, 3 Gate valve 4 Preliminary chamber 5 Vacuum robot 6 Robot chamber 7 Mask 8 Ground contact 9 Surface potential meter 10 Static elimination device 11 Control unit 12 Stage 13 Motor 14 Chrome layer 15 Resist film 19 Jig 20 Substrate transport device 30 Main body of electron beam lithography system

Claims (9)

A container capable of carrying in and out the substrate whose surface is to be treated, and capable of atmosphericizing and evacuating the internal space;
A substrate transport apparatus, comprising: a neutralization unit that is provided in the container and neutralizes a potential of the substrate surface carried into the container while exhausting and depressurizing the internal space. A first container capable of carrying in and out a substrate whose surface is to be treated and capable of exhausting the internal space;
A first valve in contact with the first container; and a second valve in contact with a processing chamber in which an internal space is evacuated; opening and closing the first valve from the first container; A second container in which an internal space is exhausted, and the substrate is loaded into the processing chamber, and the second valve is unloaded by opening and closing the second valve.
In a substrate transfer apparatus comprising :
A neutralization unit provided in the first container and configured to neutralize a potential of the substrate surface carried into the first container while exhausting and reducing the pressure of the internal space. A substrate transfer device.   A contact portion provided on the container and contacting the substrate to remove charges of the substrate before evacuating the internal space; and at least once the surface of the substrate is evacuated when the internal space is evacuated. The substrate transport apparatus according to claim 1, further comprising a potential measuring unit that measures a potential.   A contact portion that is provided in the first container and contacts the substrate to remove charges from the substrate before the internal space is evacuated; and at least once when the internal space is evacuated. The substrate transport apparatus according to claim 2, further comprising: a potential measuring unit that measures a potential of the surface of the substrate. 3. The substrate transfer apparatus according to claim 1, wherein the charge removal unit includes a pair of electrodes, and discharges between the electrodes to discharge the potential of the substrate surface to a reference potential or less. 4. . Transporting the substrate whose surface is to be treated to the first container;
A step vacuum evacuating the first vessel,
Removing the charge from the substrate surface during the evacuating and depressurizing step;
And a step of transporting the substrate to a second container connected to the first container after the step of discharging. At least once, a substrate processing method according to claim 6, characterized in that have a step of measuring the potential of the substrate surface during the down push that process.   6. The substrate according to claim 2, further comprising a plurality of contact portions that can be brought into contact with the substrate in order to ground the substrate, and means for measuring a resistance between these contact portions. Conveying device.   After the step of transporting to the first container and before the step of exhausting and depressurizing, a plurality of contact portions are brought into contact with the substrate to establish conduction, and at this time, the resistance between the plurality of contact portions And a step of confirming that the resistance is equal to or less than a predetermined resistance value. 8. The substrate processing method according to 6 or 7.

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