TW201913828A - 在所有溫度下具有低翹曲之雙面扇出封裝 - Google Patents

在所有溫度下具有低翹曲之雙面扇出封裝 Download PDF

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Publication number
TW201913828A
TW201913828A TW107125986A TW107125986A TW201913828A TW 201913828 A TW201913828 A TW 201913828A TW 107125986 A TW107125986 A TW 107125986A TW 107125986 A TW107125986 A TW 107125986A TW 201913828 A TW201913828 A TW 201913828A
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conductive
molding material
redistribution structure
semiconductor die
contacts
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TW107125986A
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TWI685901B (zh
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辰 Ｈ 游
馬克 Ｅ 朵杜
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美商美光科技公司
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Abstract

本文中揭示包含一雙面重佈結構且在所有溫度下具有低翹曲之半導體裝置以及相關聯系統及方法。在一實施例中，一種半導體裝置包含：一第一半導體晶粒，其電耦合至一重佈結構之一第一側；及一第二半導體晶粒，其電耦合至與該第一側對置之該重佈結構之一第二側。該半導體裝置亦包含：一第一模製材料，其位於該第一側上；一第二模製材料，其位於該第二側上；及數個導電柱，其等電耦合至該第一側且延伸穿過該第一模製材料。該第一模製材料及該第二模製材料可具有用於抑制該半導體裝置翹曲之相同體積及/或熱膨脹係數。

Description

在所有溫度下具有低翹曲之雙面扇出封裝
本發明大體上係關於半導體裝置。特定而言，本發明係關於包含一雙面重佈結構且經組態以在大範圍裝置溫度下低翹曲之半導體裝置以及相關聯系統及方法。
微電子裝置大體上具有一半導體晶粒(即，一晶片)，其包含具有一高密度之極小組件之積體電路。通常，晶粒包含電耦合至積體電路之一極小接合墊陣列。接合墊係供應電壓、信號等等透過其傳輸至積體電路及自積體電路傳輸之外部電接點。在形成晶粒之後，「封裝」晶粒以將接合墊耦合至可更容易耦合至各種電力供應線、信號線及接地線之一較大電端子陣列。用於封裝晶粒之習知程序包含將晶粒上之接合墊電耦合至引線、球墊或其他類型之電端子之一陣列且囊封晶粒以保護其免受環境因數(例如水分、微粒、靜電及實體衝擊)影響。
不同類型之半導體晶粒可具有大不相同接合墊配置，但應與類似外部裝置相容。因此，既有封裝技術可包含將一重佈層(RDL)附著至一半導體晶粒。RDL包含將晶粒接合墊與RDL接合墊連接之線路及/或通路。RDL接合墊之引線、球墊或其他類型之電端子之一陣列經配置以與外部裝置之接合墊配合。在一典型「先晶片」封裝程序中，將一晶粒安裝於一載體上且囊封晶粒。接著，移除載體且隨後使用沈積及微影技術來使一RDL直接形成於其中定位晶粒接合墊之晶粒之一正面上。在另一典型「後晶片」封裝程序中，使一RDL與一晶粒分開形成且接著將晶粒安裝至RDL且囊封晶粒。然而，先晶片及後晶片兩種封裝程序之一缺點係所得封裝易經受翹曲。
下文將描述半導體裝置之若干實施例之特定細節。本發明之若干實施例之一態樣係：半導體晶粒位於一RDL之兩側處。預期此對稱性將相較於使用先晶片及後晶片程序所形成之裝置而減輕翹曲。更明確而言，使用先晶片及後晶片程序所形成之封裝在RDL之各側上具有不同層。此等封裝易隨溫度變化而翹曲，因為RDL、半導體晶粒及囊封物可具有不同熱膨脹係數。過度翹曲會引起封裝故障且降低良率。根據本發明之半導體裝置之若干實施例減輕翹曲。
在一些實施例中，一種半導體裝置包含：一第一半導體晶粒，其電耦合至一重佈結構之一第一側；一第二半導體晶粒，其電耦合至該重佈結構之一第二側；一第一模製材料，其位於該第一側上；及一第二模製材料，其位於該第二側上。在一些實施例中，該半導體裝置包含遠離該重佈結構之至少該第一側上之導電接點且穿過該模製材料延伸之數個導電柱。在特定實施例中，該第一半導體晶粒及該第二半導體晶粒關於該重佈結構對稱且該第一模製材料相同於該第二模製材料或具有類似於該第二模製材料之特性。在以下描述中，討論諸多特定細節以提供本發明之實施例之一透徹且可行描述。然而，熟悉相關技術者將認識到，可在無一或多個特定細節的情況下實踐本發明。在其他例項中，未展示或未詳細描述通常與半導體裝置相關聯之熟知結構或操作以免使本發明之其他態樣不清楚。一般而言，應瞭解，除本文中所揭示之特定實施例之外，各種其他裝置、系統及方法亦可在本發明之範疇內。
如本文中所使用，術語「垂直」、「橫向」、「上」及「下」可係指半導體晶粒總成中之構件鑑於圖中所展示之定向之相對方向或位置。例如，「上」或「最上」可涉及定位成比一構件更靠近於一頁之頂部之另一構件。然而，此等術語應被廣義解釋為包含具有其他定向(諸如其中頂部/底部、上方/下方、上面/下面、上/下及左/右可取決於定向而互換之相反或傾斜定向)之半導體裝置。
圖1A繪示根據本發明之一實施例所組態之一半導體裝置100 (「裝置100」)的一橫截面圖。裝置100包含：一重佈結構130，其具有一第一表面133a及與第一表面133a對置之一第二表面133b；一第一半導體晶粒110，其耦合至第一表面133a；及一第二半導體晶粒120，其耦合至第二表面133b。因此，半導體裝置100之重佈結構130介於第一半導體晶粒110與第二半導體晶粒120 (統稱為「半導體晶粒110、120」)之間，使得半導體晶粒110、120在不同溫度處至少大體上相同地作用於重佈結構130之兩側上。預期此將相較於使用先晶片及後晶片技術所製造之既有裝置而減少半導體裝置100之翹曲。
半導體晶粒110、120可各具有積體電路或組件、資料儲存元件、處理組件及/或製造於半導體基板上之其他構件。例如，半導體晶粒110、120可包含積體記憶體電路及/或邏輯電路，其可包含各種類型之半導體組件及功能構件，諸如動態隨機存取記憶體(DRAM)、靜態隨機存取記憶體(SRAM)、快閃記憶體、其他形式之積體電路記憶體、處理電路、成像組件及/或其他半導體構件。在一些實施例中，半導體晶粒110、120可為相同的(例如經製造以具有相同設計及規格之記憶體晶粒)，但在其他實施例中，半導體晶粒110、120可彼此不同(例如不同類型之記憶體晶粒或控制器、邏輯及/或記憶體晶粒之一組合)。
第一半導體晶粒110包含暴露於其之一正面113a處之接合墊112，且接合墊112藉由導電構件115來電耦合至重佈結構130之第一表面133a處之跡線及/或襯墊。第二半導體晶粒120包含暴露於其之一正面123a處之接合墊122，且接合墊122藉由導電構件125來電耦合至重佈結構130之第二表面133b處之跡線及/或襯墊。第一導電構件115及第二導電構件125 (統稱為「導電構件115、125」)可具有各種適合結構(諸如支柱、柱、短軸、凸塊等等)且其可由銅、鎳、焊料(例如基於SnAg之焊料)、填充有導體之環氧樹脂及/或其他導電材料製成。在特定實施例中，第一導電構件115及/或第二導電構件125係焊料接頭。在選定實施例中，導電構件115、125可為銅柱，而在其他實施例中，導電構件115、125可包含更複雜結構，諸如氮化物上凸塊結構。在一些實施例中，第一導電構件115具有高於重佈結構130之一高度，使得裝置100包含第一半導體晶粒110與重佈結構130之第一表面133a之間之一第一間隙118。同樣地，第二導電構件125可具有高於重佈結構130之一高度，使得裝置100包含第二半導體晶粒120與重佈結構130之第二表面133b之間之一第二間隙128。在一些實施例中，第一間隙118之體積及/或另一數量或尺寸(例如高度)實質上等於第二間隙128之體積及/或另一數量或尺寸(例如高度)。
在圖1A所繪示之實施例中，半導體晶粒110、120耦合至重佈結構130之對置表面，使得其等關於重佈結構130之對置側反射對稱。然而，在其他實施例中，半導體晶粒110、120可具有不同平面形狀及/或可相對於重佈結構130及彼此不同配置。再者，如圖1A中所展示，裝置100僅包含兩個半導體晶粒。然而，在其他實施例中，裝置100可包含任何數目個半導體晶粒。例如，裝置100可包含堆疊於第一半導體晶粒110及/或第二半導體晶粒120上之一或多個額外半導體晶粒，或裝置100可具有相鄰於第一半導體晶粒110及/或第二半導體晶粒120耦合至重佈結構130之其他半導體晶粒。
重佈結構130包含一絕緣材料131及藉由絕緣材料131來彼此電隔離之導電部分135。重佈結構130之絕緣材料131可包括(例如)一適合介電材料(例如一鈍化材料)之一或多個層。重佈結構130之導電部分135可包含位於絕緣材料131中及/或絕緣材料131上且暴露於第一表面133a處之第一接點132及第二接點134 (統稱為「接點132、134」)。如圖1A中所展示，第一接點132可定位於一晶粒附著區域中之第一表面133a處，使得其至少部分位於第一半導體晶粒110下方。第二接點134可沿周邊與第一接點132隔開(例如，自第一接點132橫向扇出或定位於第一接點132外)，使得其不定位於第一半導體晶粒110下方。重佈結構130亦包含位於絕緣材料131中及/或絕緣材料131上且暴露於第二表面133b處之導電第三接點136。第三接點136可定位於一晶粒附著區域中之第二表面133b處，使得其至少部分位於第二半導體晶粒120下方且自第二接點134橫向向內間隔。
在一些實施例中，可垂直對準第一接點132及第三接點136之至少一部分(例如，沿重佈結構130相同橫向間隔及/或關於重佈結構130反射對稱)。例如，第一接點132可直接疊置於第三接點136上方/下方，使得第三接點136具有相同於第一接點132之橫向範圍。可期望在半導體晶粒110、120相同或分別具有接合墊112、122之相同組態時匹配第一接點132及第三接點136之分佈、大小及/或其他特性。
重佈結構130之導電部分135可進一步包含延伸於絕緣材料131內及/或絕緣材料131上以將第一接點132及第三接點136之個別者電耦合至第二接點134之對應者之導線138 (例如通路及/或跡線)。例如，一個別導電部分135可包含將一個別第一接點132電耦合至一對應第二接點134及/或將一個別第三接點136電耦合至一對應第二接點134之一或多個導線138。在一些實施例(圖1A中未繪示)中，一個別第二接點134可經由對應導線138電耦合至一個以上第一接點132及/或第三接點136。依此方式，裝置100可經組態使得半導體晶粒110、120之個別接針被個別隔離且可經由單獨第二接點134接取(例如信號接針)，及/或經組態使得多個接針可經由相同第二接點134共同接取(例如電力供應或接地接針)。在特定實施例中，第一接點132、第二接點134、第三接點136及導線138可由諸如銅、鎳、焊料(例如基於SnAg之焊料)、填充有導體之環氧樹脂及/或其他導電材料之一或多個導電材料形成。
重佈結構130不包含一預成形基板(即，與一載體晶圓分開形成且隨後附著至載體晶圓之一基板)。因此，重佈結構130可為極薄的。例如，在一些實施例中，重佈結構130之第一表面133a與第二表面133b之間之一距離D小於50 µm。在特定實施例中，距離D係約30 µm或小於30 µm。因此，可相較於(例如)包含形成於一預成形基板上方之一習知重佈層之裝置而減小半導體裝置100之總大小。然而，重佈結構130之厚度係不受限制的。在其他實施例中，重佈結構130可包含不同構件及/或構件可具有一不同配置。
裝置100亦包含電耦合至重佈結構130之第二接點134之導電柱140。導電柱140遠離重佈結構130之第一表面133a延伸且可由銅、鎳、焊料(例如基於SnAg之焊料)、填充有導體之環氧樹脂及/或其他導電材料製成。在所繪示之實施例中，導電柱140向上延伸超過第一半導體晶粒110之一背面113b之標高。即，導電柱140可具有高於重佈結構130之第一表面133a之一高度，其大於第一半導體晶粒110之一高度。在其他實施例中，導電柱140之高度可等於或小於第一半導體晶粒110之背面113b之高度。因此，導電柱140之高度可大於重佈結構130之第一表面133a上方之第一導電構件115之一高度。再者，各導電柱140可包含界定一導電第四接點142之一暴露終端141 (例如與重佈結構130之第二接點134對置之端)。第四接點142可高於一第一模製材料150之一上表面151，與上表面151共面，或相對於上表面151凹進。
第一模製材料150可形成於重佈結構130之第一表面133a之至少一部分上且可至少部分包圍第一半導體晶粒110及/或導電柱140。類似地，一第二模製材料160可形成於重佈結構130之第二表面133b之至少一部分上且可至少部分包圍第二半導體晶粒120。在一些實施例中，第一模製材料150及第二模製材料160 (統稱為「模製材料150、160」)分別囊封半導體晶粒110、120以藉此保護半導體晶粒110、120免受污染及實體損壞。在特定實施例中，第一模製材料150至少部分填充第一半導體晶粒110之正面113a與重佈結構130之第一表面133a之間之第一間隙118，且第二模製材料160至少部分填充第二半導體晶粒120之正面123a與重佈結構130之第二表面133b之間之第二間隙128。在此等實施例中，模製材料150、160可用於加強半導體晶粒110、120與重佈結構130之間之耦合。
在圖1A所繪示之實施例中，第一模製材料150之上表面151具有高於重佈結構130之一高度(例如，沿遠離第一表面133a之一方向)，其大於第一半導體晶粒110之背面113b之一高度。同樣地，第二模製材料160之一下表面161具有低於重佈結構130之一厚度(例如，沿遠離第二表面133b之一方向)，其大於第二半導體晶粒120之一背面123b之一高度。依此方式形成模製材料150、160保護半導體晶粒110、120之各自背面113b及123b免受會損壞晶粒之外部污染或力。在其他實施例中，上表面151及下表面161可相對於半導體晶粒110、120不同定位。例如，上表面151及下表面161可分別與半導體晶粒110、120之各自背面113b、123b共面。在此等實施例中，半導體晶粒110、120可在背面113b、123b處含有襯墊、接點或其他電連接構件，使得半導體晶粒110、120可在背面113b、123b處電接取。在一些實施例中，可依此方式僅電接取半導體晶粒110、120之一者。
由於重佈結構130不包含一預成形基板，所以模製材料150、160可經組態以對重佈結構130之各側提供所要結構強度。例如，模製材料150、160可經選擇以防止裝置100在將外力施加至裝置100時彎曲、翹曲等等。因此，在一些實施例中，重佈結構130可被製成極薄的(例如，小於50 µm或小於30 µm)，此係因為重佈結構130無需提供裝置100之主要強度。因此，可減小裝置100之總大小(例如高度)。
另外，在一些實施例中，第一模製材料150具有相同於或實質上等於第二模製材料160之數量(例如體積)、尺寸(例如高度)或材料特性(例如熱膨脹係數)。在特定實施例中，第一模製材料150係相同於第二模製材料160之化合物，及/或模製材料150、160實質上相對於重佈結構130對稱形成。因此，模製材料150、160可強烈影響裝置100之總體熱/機械性質以減輕大範圍之裝置溫度下之裝置100之翹曲。例如，模製材料150、160之體積可經選擇使得重佈結構130之各側上之構件(例如模製材料、半導體晶粒、導電柱、額外重佈結構或導電構件等等)之平均熱膨脹係數實質上相等(即使半導體晶粒110、120不相同或不反射對稱配置)以抑制裝置100之翹曲。
例如，第一半導體晶粒110之體積與第一模製材料150之體積之比率可等於或實質上等於第二半導體晶粒120之體積與第二模製材料160之體積之比率。類似地，模製材料150、160之體積可經調整以填補自重佈結構130之第二表面133b延伸之導電柱之缺失。因此，重佈結構130與第一表面133a上方之構件(例如第一模製材料150、導電柱140及第一半導體晶粒110)之間之CTE失配可等於或實質上等於重佈結構130與第二表面133b上方之構件(例如第二模製材料160及第二半導體晶粒120)之間之CTE失配。因此，由裝置100之各側上之CTE失配誘發之熱應力在裝置內被抵消(例如，消除)。此抑制重佈結構130及/或裝置100之其他構件之彎曲、翹曲等等。因此，可減小重佈結構130之總大小(例如高度)，此係因為裝置100經組態以不誘發因溫度變化所致之重佈結構130中之實質(例如未消除)應力。
相比而言，習知「單面」半導體封裝包含一重佈層(「RDL」)及僅附著至RDL之一單面之一晶粒以及該單面上方之一囊封物。此等半導體封裝內之層之間(例如RDL與囊封物之間)之CTE失配未被平衡，且由熱膨脹或收縮誘發之應力會引起半導體封裝顯著翹曲以使半導體封裝無法操作。例如，半導體封裝通常在其併入至外部電路時(例如，在一板安裝程序期間)暴露於高溫。因此，必須將板安裝程序修改為使用較低溫度(例如，增加了成本)或必須接受由一高溫程序所致之良率損失。預期本發明將相較於習知「單面」半導體封裝而降低涉及半導體裝置100之其他程序期間及正常操作期間之良率損失，此係因為半導體裝置100經組態以在大溫度範圍內超低翹曲。
裝置100可進一步包含安置於由導電柱140形成之第四接點142上之電連接器106。電連接器106可為焊球、導電凸塊、導電支柱、導電環氧樹脂及/或其他適合導電元件且可電耦合至外部電路(圖中未展示)。在一些實施例中，電連接器106可大體上排列成列及行以在第一模製材料150之上表面151處之第四接點142上形成一陣列(例如一球柵陣列)。更明確而言，圖1B係裝置100之一俯視圖，其示意性地展示第一模製材料150之上表面151上之電連接器106之配置之一實施例。在所繪示之實施例中，電連接器106配置成一周邊陣列(例如一周邊球柵陣列)，其中電連接器106全部沿周邊與第一半導體晶粒110隔開(例如，定位於第一半導體晶粒110外)。即，電連接器106不定位於第一半導體晶粒110之一覆蓋區111內。
在其他實施例中，電連接器106之一或多者可至少部分定位於第一半導體晶粒110之覆蓋區111內，及/或電連接器106可具有任何其他適合定位及排列(例如呈偏移列或行、呈一同心圖案、不均勻間隔等等)。例如，在一些實施例中，一第二重佈結構可形成於第一模製材料150之上表面151上且用於將電連接器106分佈成不同配置(例如具有大於圖1B中所繪示之周邊球柵陣列實施例之電連接器106之相鄰者之間之空間之一「扇入」或其他配置)。在其他實施例中，可省略電連接器106且可將第四接點142直接連接至外部裝置或電路。
圖2A至圖2M係繪示根據本發明之實施例之製造半導體裝置100之一方法中之各種階段的橫截面圖。一般而言，可將一半導體裝置100製造成(例如)一離散裝置或一較大晶圓或面板之部分。在晶圓級或面板級製造中，形成一較大半導體裝置，接著將其分割以形成複數個個別裝置。為便於解釋及理解，圖2A至圖2M繪示兩個半導體裝置100之製造。然而，熟悉技術者應易於瞭解，可將半導體裝置100之製造拓廣至晶圓及/或面板級(即，包含能夠分割為兩個以上半導體裝置100之更多組件)，同時包含類似於本文中所描述之構件之構件且使用類似於本文中所描述之程序之程序。
更明確而言，圖2A至圖2D展示製造半導體裝置100 (圖1A)之一重佈結構。參考圖2A，在具有一正面271a及一背面271b之一第一載體270上形成重佈結構130 (圖1A)，且在第一載體270之正面271a上形成一第一釋放層272。第一載體270對後續處理階段提供機械支撐且可為由(例如)矽、絕緣體上矽、化合物半導體(例如氮化鎵)、玻璃或其他適合材料形成之一臨時載體。在一些實施例中，可在隨後移除第一載體270之後重新使用第一載體270。第一載體270亦在後續處理階段期間保護第一釋放層272之一表面以確保稍後可自重佈結構130適當移除第一釋放層272。第一釋放層272防止重佈結構130與第一載體270直接接觸且因此保護重佈結構130免受第一載體270上之可能污染。第一釋放層272可為一次性膜(例如基於環氧樹脂之材料之一層疊膜)或其他適合材料。在一些實施例中，第一釋放層272係雷射敏感或光敏的以促進其在一後續階段中之移除。
重佈結構130 (圖1A)包含可由一添加堆積程序形成之導電及介電材料。即，將重佈結構130添加地直接堆積於第一載體270及第一釋放層272而非另一層疊或有機基板上。明確而言，藉由諸如濺鍍、物理氣相沈積(PVD)、電鍍、微影等等之半導體晶圓製程來製造重佈結構130。例如，參考圖2B，可在第一釋放層272上直接形成第三接點136及導線138之一部分，且可在第一釋放層272上形成一層絕緣材料131以電隔離個別第三接點136及對應導線138。介電材料131可由(例如)聚對二甲苯、聚醯亞胺、低溫化學氣相沈積(CVD)材料(諸如四乙氧基矽烷(TEOS)、氮化矽(Si3 Ni4 )、氧化矽(SiO2 ))及/或其他適合介電、非導電材料形成。參考圖2C，可形成一或多個額外導電材料層以將導電部分135堆疊於絕緣材料131上及/或絕緣材料131內，且可形成一或多個絕緣材料層以堆積絕緣材料131。
圖2D展示完全形成於第一載體270上方之重佈結構130。如上文所描述，形成經由導線138之一或多者電耦合至對應第二接點134之第一接點132及第三接點136。重佈結構130之導電部分135 (即，第一接點132、第二接點134、第三接點136及導線138)可由銅、鎳、焊料(例如基於SnAg之焊料)、填充有導體之環氧樹脂及/或其他導電材料形成。在一些實施例中，導電部分135全部由相同導電材料製成。在其他實施例中，第一接點132、第二接點134、第三接點136及/或導線138可包括一個以上導電材料。
參考圖2E，藉由在重佈結構130之第一接點132上形成第一導電構件115且在重佈結構130之第二接點134上形成導電柱140來繼續半導體裝置100之製造。在所繪示之實施例中，導電柱140具有大於第一導電構件115之一高度之一高度。在一些實施例中，第一導電構件115及導電柱140可形成為系統程序之部分。例如，在特定實施例中，可藉由此項技術中熟知之一適合電鍍程序來製造第一導電構件115及導電柱140。在其他實施例中，可使用其他沈積技術(例如濺鍍沈積)來替代電鍍。在其他實施例中，第一導電構件115及/或導電柱140可由不同程序及/或在不同時間形成。例如，第一導電構件115可包括安置於第一接點132上之焊球或焊料凸塊，而導電柱140使用電鍍或無電電鍍技術來鍍覆於第二接點134上。再者，第一導電構件115及導電柱140可具有一圓形、矩形、六邊形、多邊形或其他橫截面形狀且其可為單層或多層結構。
圖2F展示將第一半導體晶粒110電耦合至第一導電構件115之後之半導體裝置100。更明確而言，可將第一半導體晶粒110覆晶接合至重佈結構130，使得第一半導體晶粒110之接合墊112經由第一導電構件115電耦合至重佈結構130之第一接點132之對應者。在一些實施例中，使用焊料或焊料膏來將接合墊112耦合至第一導電構件115。在其他實施例中，可使用諸如熱壓接合(例如銅-銅(Cu-Cu)接合)之另一程序來形成接合墊112與第一導電構件115之間之導電Cu-Cu接頭。如圖2F中所展示，可形成延伸超過第一半導體晶粒110之一背面113b之一標高之導電柱140。在其他實施例中，可形成具有等於第一半導體晶粒110之一高度之一高度之導電柱140 (例如，導電柱140之上端部分可大體上與第一半導體晶粒110之背面113b共面)。
參考圖2G，半導體裝置100之製造接著使第一模製材料150安置於重佈結構130之第一表面133a上方且至少部分圍繞第一半導體晶粒110及導電柱140安置。第一模製材料150可由樹脂、環氧樹脂、基於聚矽氧之材料、聚醯亞胺及/或此項技術中使用或已知之其他適合樹脂形成。一旦被沈積，第一模製材料150可藉由UV光、化學硬化劑、熱或此項技術中已知之其他適合固化方法來固化。可將第一模製材料150至少部分安置於各第一半導體晶粒110與重佈結構130之第一表面133a之間之第一間隙118中。因此，第一模製材料150可無需一單獨底膠材料且可加強第一半導體晶粒110與重佈結構130之間之耦合。在一替代實施例中，可代以由一底膠材料填充間隙118，且接著可將第一模製材料150安置於重佈結構130之第一表面133a上方。根據本發明之一態樣，各導電柱140之至少終端141可暴露於第一模製材料150之上表面151處，使得終端141共同界定第四接點142。在一些實施例中，在一步驟中形成第一模製材料150，使得第四接點142暴露於第一模製材料150之上表面151處。在其他實施例中，形成第一模製材料150且接著磨削第一模製材料150以平坦化上表面151且藉此暴露導電柱140之第四接點142。如圖2G中所進一步展示，在一些實施例中，第一模製材料150囊封第一半導體晶粒110，使得第一半導體晶粒110密封於第一模製材料150內。
圖2H繪示使重佈結構130與第一載體270 (圖2G)分離且將半導體裝置結構附著至一第二載體280之後之半導體裝置100。更明確而言，將第一模製材料150之上表面151附著至第二載體280之一第二釋放層282。第二載體280可為由(例如)矽、絕緣體上矽、化合物半導體(例如氮化鎵)、玻璃或其他適合材料形成之一臨時載體，且在某種程度上，第二載體280可對重佈結構130之第二表面133b上之後續處理階段提供機械支撐。第二釋放層282可為將第二載體280固定至模製材料150及/或繪示半導體裝置結構之其他構件(例如導電柱140之第四接點142)之一次性膜(例如基於環氧樹脂之材料之一層疊膜)或其他適合材料。
在一些實施例中，第一釋放層272 (圖2G)允許第一載體270易於經由真空、桿銷、雷射或其他光源或其他適合方法自重佈結構130移除，使得第一載體270可被再次重新使用。在其他實施例中，亦可使用研磨技術(例如背面研磨)或其他適合技術(例如乾式蝕刻程序、化學蝕刻程序、化學機械拋光(CMP)等等)來移除第一載體270及第一釋放層272。移除第一載體270及第一釋放層272暴露包含第三接點136之重佈結構130之第二表面133b。在一些實施例中，在使第一載體270與重佈結構130分離之前附著第二載體280。在其他實施例中，可在附著第二載體280之前移除第一載體270。在其他實施例中，第一模製材料150可提供足以使後續處理步驟可在無第二載體280的情況下實施之結構強度，且可省略第二載體280。再者，在所繪示之實施例中，半導體裝置結構之定向未改變(例如，重佈結構130之第二表面133b保持面向下)。然而，在一些實施例中，可在附著第二載體280之前或附著第二載體280之後重新定向半導體裝置結構。例如，可在附著第二載體280之後翻轉(例如旋轉180°)半導體裝置結構(例如，使得重佈結構130之第二表面133b面向上)以促進第二表面133b上之後續處理階段。
參考圖2I，半導體裝置100之製造接著在重佈結構130之第三接點136上形成第二導電構件125且將第二半導體晶粒120電耦合至第二導電構件125。可如上文參考第一導電構件115所描述般形成第二導電構件125。同樣地，第二半導體晶粒120可依大體上類比於第一半導體晶粒110之一方式電耦合至第二導電構件125，如上文參考圖2F所描述。例如，第二導電構件125可包括銅柱、焊球等等，且第二半導體晶粒120可覆晶接合至重佈結構130，使得第二半導體晶粒120之接合墊122經由第二導電構件125電耦合至重佈結構130之第三接點136之對應者。在一些實施例中，形成關於重佈結構130對稱之半導體晶粒110、120。例如，第一半導體晶粒110及第二半導體晶粒120可彼此上下疊置。在其他實施例中，第二半導體晶粒120可電耦合至重佈結構以自第一半導體晶粒110橫向偏移，及/或可形成具有不同於第一導電構件115之一高度之第二導電構件125。
圖2J繪示使第二模製材料160安置於重佈結構130之第二表面133b上方且至少部分圍繞第二半導體晶粒120安置之後之半導體裝置100。第二模製材料160可大體上類似於第一模製材料150 (例如，可由樹脂、環氧樹脂、基於聚矽氧之材料、聚醯亞胺及/或此項技術中使用或已知之其他適合樹脂形成)且可依大體上類比於第一模製材料150之一方式沈積及固化於第二表面133b上，如上文參考圖2G所描述。第二模製材料160可至少部分安置於各第二半導體晶粒120與重佈結構130之第二表面133b之間之第二間隙128中以無需一單獨底膠材料且加強第二半導體晶粒120與重佈結構130之間之耦合。在一替代實施例中，可首先使用一底膠材料來填充間隙128且接著可將第二模製材料160安置於第二半導體晶粒120上方。
如圖2J中所進一步展示，在一些實施例中，第二模製材料160囊封第二半導體晶粒120，使得第二半導體晶粒120密封於第二模製材料160內。在一些實施例中，第二模製材料160經形成使得下表面161比第二半導體晶粒120之背面123b更大程度地深入至重佈結構130下方(例如，沿遠離第二表面133b之一方向)。在其他實施例中，第二模製材料160可經形成或磨削使得下表面161與(例如)第二半導體晶粒120之背面123共面。
參考圖2K，半導體裝置100之製造接著使第二載體280 (圖2J)與第一模製材料150之上表面151分離。可依大體上類似於第一載體270及第一釋放層272之一方式分離第二載體280及第二釋放層282，如上文參考圖2H所描述。例如，第二釋放層282可第二載體280允許易於經由真空、桿銷或其他適合方法自第一模製材料150移除。在其他實施例中，可使用諸如(例如)背面研磨、乾式蝕刻程序、化學蝕刻程序、化學機械拋光(CMP)等等之其他適合程序來移除第二載體280及第二釋放層282。移除第二載體280及第二釋放層282暴露第一模製材料150之上表面151及第四接點142。
圖2L展示將電連接器106耦合至導電柱140之第四接點142之後之半導體裝置100。電連接器106經組態以將第四接點142電耦合至外部電路(圖中未展示)。在一些實施例中，電連接器106包括焊球或焊料凸塊。例如，一模板印刷機可將焊料膏之離散區塊沈積至第四接點142上。接著，回焊焊料膏以在第四接點上形成焊球或焊料凸塊。在其他實施例中，可在附著第二載體280之前形成電連接器106。例如，在一些實施例中，可在重佈結構130之第一表面133a上形成第一模製材料150 (圖2G)之後但在附著第二載體280 (圖2H)之前形成電連接器106。在此等實施例中，第二釋放層282可經組態以將第二載體280附著至第一模製材料150之上表面151及/或電連接器106。在此較早階段中形成電連接器106之一優點係第一載體270仍被附著且可對電連接器106之形成提供機械支撐。然而，在圖2K所繪示之實施例中，半導體裝置結構(且明確而言，模製材料150、160)可在無載體的情況下對電連接器106之形成提供足夠結構支撐。再者，由於在此較後階段中形成電連接器106，所以第二載體280可附著至第一模製材料150之平坦上表面151 (圖2H至圖2J)且無需附著至電連接器106。
此外，在一些實施例中，可在電耦合電連接器106之前使一第二重佈結構形成於第一模製材料150之上表面151及導電柱140之第四接點142上方(例如，不論電連接器106形成於附著第二載體280之前或移除第二載體280之後)。可藉由大體上類似於重佈結構130之一程序來形成此一第二重佈結構(例如，第二重佈結構可包含由一添加堆積程序形成之導電及介電材料)。第二重佈結構可提供不同於第四接點142之一接點配置，且電連接器106可形成於第二重佈結構上以提供用於與外部電路連接之一不同配置(例如一扇入或更寬間隔陣列)。
如圖2L中所進一步展示，可在相鄰半導體裝置100之間提供分割道290以促進半導體裝置100之分割。圖2M展示彼此分割之後之半導體裝置100。明確而言，可在分割道290 (如圖2L中所繪示)處一起切割第一模製材料150、重佈結構130及第二模製材料160以使半導體裝置100彼此分離。一旦被分割，個別半導體裝置100可經由電連接器106附著至外部電路且因此併入至各種系統及/或裝置中。
上文參考圖1至圖2M所描述之半導體裝置之任何者可併入至各種更大及/或更複雜系統之任何者中，圖3中所示意性展示之系統390係該等系統之一代表性實例。系統390可包含一半導體晶粒總成300、一電源392、一驅動器394、一處理器396及/或其他子系統或組件398。半導體晶粒總成300可包含具有大體上類似於上述半導體裝置之構件之構件之半導體裝置。所得系統390可執行各種功能之任何者，諸如記憶體儲存、資料處理及/或其他適合功能。因此，代表性系統390可包含(但不限於)手持裝置(例如行動電話、平板電腦、數位讀取器及數位音訊播放器)、電腦及電器。系統390之組件可收容於一單一單元中或分佈於多個互連單元上(例如，透過一通信網路)。系統390之組件亦可包含遠端裝置及各種電腦可讀媒體之任何者。
可自上文瞭解，本文已為了說明而描述本發明之特定實施例，但可在不背離本發明的情況下作出各種修改。因此，本發明僅受限於隨附申請專利範圍。此外，亦可在其他實施例中組合或消除特定實施例之內文中所描述之新技術之特定態樣。再者，儘管已在該等實施例之內文中描述與新技術之特定實施例相關聯之優點，但其他實施例亦可展現此等優點，且未必需要落入本發明之範疇內之全部實施例展現此等優點。因此，本發明及相關聯技術可涵蓋本文中未明確展示或描述之其他實施例。
100‧‧‧半導體裝置
106‧‧‧電連接器
110‧‧‧第一半導體晶粒
111‧‧‧覆蓋區
112‧‧‧接合墊
113a‧‧‧正面
113b‧‧‧背面
115‧‧‧第一導電構件
118‧‧‧第一間隙
120‧‧‧第二半導體晶粒
122‧‧‧接合墊
123a‧‧‧正面
123b‧‧‧背面
125‧‧‧第二導電構件
128‧‧‧第二間隙
130‧‧‧重佈結構
131‧‧‧絕緣材料
132‧‧‧第一接點
133a‧‧‧第一表面
133b‧‧‧第二表面
134‧‧‧第二接點
135‧‧‧導電部分
136‧‧‧第三接點
138‧‧‧導線
140‧‧‧導電柱
141‧‧‧終端
142‧‧‧第四接點
150‧‧‧第一模製材料
151‧‧‧上表面
160‧‧‧第二模製材料
161‧‧‧下表面
270‧‧‧第一載體
271a‧‧‧正面
271b‧‧‧背面
272‧‧‧第一釋放層
280‧‧‧第二載體
282‧‧‧第二釋放層
290‧‧‧分割道
300‧‧‧半導體晶粒總成
390‧‧‧系統
392‧‧‧電源
394‧‧‧驅動器
396‧‧‧處理器
398‧‧‧其他子系統/組件
D‧‧‧距離
圖1A及圖1B分別係繪示根據本發明之實施例之一半導體裝置的一橫截面圖及一俯視圖。
圖2A至圖2M係繪示根據本發明之實施例之各種製造階段中之一半導體裝置的橫截面圖。
圖3係包含根據本發明之實施例所組態之一半導體裝置之一系統之一示意圖。

Claims (25)

  1. 一種半導體裝置，其包括： 一重佈結構，其具有一第一表面及與該第一表面對置之一第二表面，其中該第一表面包含數個第一導電接點及數個第二導電接點，其中該第二表面包含數個第三導電接點，且其中該等第一導電接點及該等第三導電接點藉由穿過一絕緣材料及/或在一絕緣材料上延伸之導線來電耦合至該等第二導電接點之對應者； 一第一半導體晶粒，其位於該重佈結構之該第一表面處且電耦合至該等第一導電接點； 一第二半導體晶粒，其位於該重佈結構之該第二表面處且電耦合至該等第三導電接點； 一第一模製材料，其位於該第一表面上，該第一模製材料至少部分囊封該第一半導體晶粒； 一第二模製材料，其位於該第二表面上，該第二模製材料至少部分囊封該第二半導體晶粒；及 數個導電柱，其等延伸穿過該第一模製材料且電耦合至該等第二導電接點之對應者。
  2. 如請求項1之半導體裝置，其中該第一半導體晶粒及該第二半導體晶粒關於該重佈結構反射對稱。
  3. 如請求項1之半導體裝置，其中該第一模製材料相同於該第二模製材料。
  4. 如請求項1之半導體裝置，其中該第一模製材料之一熱膨脹係數實質上等於該第二模製材料之一熱膨脹係數。
  5. 如請求項1之半導體裝置，其中該第一模製材料之一體積實質上等於該第二模製材料之一體積。
  6. 如請求項1之半導體裝置，其中該第一模製材料完全囊封該第一半導體晶粒，且其中該第二模製材料完全囊封該第二半導體晶粒。
  7. 如請求項1之半導體裝置，其中該等導電柱具有至少與該第一半導體晶粒之一最上表面與該重佈結構之該第一表面之間之距離一樣大之一高度。
  8. 如請求項1之半導體裝置，其中該等導電柱各具有自該第一模製材料暴露之一端部分且該等端部分共同界定第四導電接點。
  9. 如請求項8之半導體裝置，其進一步包括安置於該等第四導電接點上之數個導電構件。
  10. 如請求項9之半導體裝置，其中該等導電構件係焊球及焊料凸塊之至少一者。
  11. 如請求項1之半導體裝置，其中該第一表面包含該第一半導體晶粒下方之一第一晶粒附著區域，其中該第二表面包含該第二半導體晶粒下方之一第二晶粒附著區域，其中該等第一導電接點位於該第一晶粒附著區域中且該等第三導電接點位於該第二晶粒附著區域中，且其中該等第二導電接點位於該第一晶粒附著區域外。
  12. 如請求項1之半導體裝置，其中該等第二接點之至少一第一者比與該等第二接點之該第一者電耦合之該對應第一接點更與該第一半導體晶粒橫向間隔，且其中該等第二接點之至少一第二者比與該等第二接點之該第二者電耦合之該對應第三接點更與該第二半導體晶粒橫向間隔。
  13. 如請求項1之半導體裝置，其中該第一表面與該第二表面之間之該重佈結構之一厚度小於約50 µm。
  14. 如請求項1之半導體裝置，其中該重佈結構係一第一重佈結構，且該半導體裝置進一步包括該第一模製材料之至少一部分上之一第二重佈結構。
  15. 如請求項1之半導體裝置，其中該重佈結構不包含一預成形基板。
  16. 一種製造一半導體裝置之方法，該方法包括： 在一第一載體上形成一重佈結構； 在該重佈結構之一第一表面上形成數個導電柱，其中該第一表面包含數個第一導電接點及數個第二導電接點，且其中該等導電柱電耦合至該等第二導電接點之對應者； 將一第一半導體晶粒電耦合至該等第一導電接點； 在該重佈結構之該第一表面上形成一第一模製材料； 將一第二載體附著至該第一模製材料之至少一部分； 移除該第一載體以暴露該重佈結構之一第二表面； 將一第二半導體晶粒電耦合至該重佈結構之該第二表面之第三導電接點； 在該重佈結構之該第二表面上形成一第二模製材料；及 移除該第二載體。
  17. 如請求項16之方法，其中該第一模製材料至少部分包圍該第一半導體晶粒及該等導電柱，且其中附著該第二載體包含將該載體附著至該第一模製材料之一上表面。
  18. 如請求項16之方法，其進一步包括： 形成電耦合至該等第一導電接點之對應者之數個第一導電構件； 形成電耦合至該等第三導電接點之對應者之數個第二導電構件；及 其中將該第一半導體晶粒電耦合至該等第一導電接點包括將該第一半導體晶粒電耦合至該等第一導電構件，且其中將該第二半導體晶粒電耦合至該等第三導電接點包括將該第二半導體晶粒電耦合至該等第二導電構件。
  19. 如請求項16之方法，其中該等導電柱各具有自該第一模製材料暴露之一端部分且該等端部分共同界定數個導電封裝接點，且其中該方法進一步包括： 在附著該第二載體之前，在該等封裝接點上形成數個導電構件。
  20. 如請求項16之方法，其中該等導電柱各具有自該第一模製材料暴露之一端部分且該等端部分共同界定數個導電封裝接點，且其中該方法進一步包括： 在移除該第二載體之後，在該等封裝接點上形成數個導電構件。
  21. 一種半導體裝置封裝，其包括： 一重佈結構，其具有一第一側、一第二側及穿過一絕緣材料及/或在一絕緣材料上延伸之數個導電路徑，其中該絕緣材料使該等導電路徑電隔離； 數個導電柱，其等遠離該重佈結構之該第一側延伸且電耦合至該等導電路徑之對應者； 一第一半導體晶粒，其附著至該重佈結構之該第一側且經由該等導電路徑之一第一部分電耦合至該等導電柱之一第一部分； 一第二半導體晶粒，其附著至該重佈結構之該第二側且經由該等導電路徑之一第二部分電耦合至該等導電柱之一第二部分；及 一模製材料，其位於該重佈結構之該第一側及該第二側上，其中該模製材料至少部分包圍該第一半導體晶粒、該第二半導體晶粒及該等導電柱，且其中各導電柱之一部分自該第一模製材料暴露以共同界定數個導電封裝接點。
  22. 如請求項21之半導體裝置封裝，其中該第一側上之該模製材料具有一第一尺寸，其中該第二側上之該模製材料具有一第二尺寸，且其中該模製材料經組態使得該第一尺寸及該第二尺寸回應於該半導體裝置封裝之一溫度變化而依一相等或實質上相等速率變化。
  23. 如請求項21之半導體裝置封裝，其中該等封裝接點之至少一者電耦合至該第一半導體晶粒及該第二半導體晶粒兩者。
  24. 如請求項21之半導體裝置封裝，其中該第一半導體晶粒具有面向該重佈結構之該第一側之數個第一接合墊，其中該第二半導體晶粒具有面向該重佈結構之該第二側之數個第二接合墊，且該半導體裝置封裝進一步包括： 數個第一導電構件，其等安置於該重佈結構之第一接點上且電耦合至該等第一接合墊之對應者；及 數個第二導電構件，其等安置於該重佈結構之第三接點上且電耦合至該等第二接合墊之對應者。
  25. 如請求項24之半導體裝置封裝，其中該等第一導電構件及該等第二導電構件係銅柱或一焊接材料之至少一者。
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US11784166B2 (en) 2023-10-10
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US11239206B2 (en) 2022-02-01
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US10304805B2 (en) 2019-05-28
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