TW201911512A - 金屬化層級及其製造方法 - Google Patents
金屬化層級及其製造方法 Download PDFInfo
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- TW201911512A TW201911512A TW107117236A TW107117236A TW201911512A TW 201911512 A TW201911512 A TW 201911512A TW 107117236 A TW107117236 A TW 107117236A TW 107117236 A TW107117236 A TW 107117236A TW 201911512 A TW201911512 A TW 201911512A
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- 238000001465 metallisation Methods 0.000 title claims abstract description 195
- 238000004519 manufacturing process Methods 0.000 title abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000003989 dielectric material Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 47
- 238000003672 processing method Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 silicon Chemical compound 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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Abstract
本發明揭示積體電路的金屬化層級的結構及其相關製造方法。具有形成一金屬線的一第一金屬化層級。一第二金屬化層級形成於該第一金屬化層級的上方,具有二金屬化線以及從該二金屬化線延伸至該第一金屬化層級的該金屬化線的二導電通孔。該第一金屬化線被分割為一第一區段以及與該第一部分斷開的一第二區段,使得該第一區段通過一導電通孔連接至該第二金屬化層級中的一金屬線,該第二區段通過另一導電通孔連接至該第二層級中的另一金屬化線。
Description
本發明係關於半導體裝置製造以及積體電路,更具體而言,係關於積體電路的金屬化層級(level)及製造金屬化層級的方法。
一積體電路的金屬化層級用於提供裝置以及該積體電路的元件之間的連接。任何一個金屬化層級通常包括多個導電金屬化線,且一個層級的金屬化線可通過導電通孔連接到一較高或較低層級的金屬化線。當積體電路裝置繼續縮小時,各種製造技術的限制可能會限制導電通孔的設置位置以及導電通孔如何緊密地設置在一起,並限制了特定金屬化層級以及整個積體電路的設計。
在本發明的一實施例中,一種方法包括形成一第一金屬化層級以及位於該第一金屬化層級上方的第二金屬化層級。該第一金屬化層級具有一金屬化線,該第二金屬化層級具有一介電層以及兩條金屬化線,該兩條金屬化線通過延伸通過該介電層的導電通孔而連接至該第一 金屬化層級中的該金屬化線。在形成該第二金屬化層級之後,該第一層級中的該金屬化線被分割為相互斷開的兩個區段,導致一個區段通過一個導電通孔連接到該第二層級中的一金屬化線,以及另一區段通過該另一導電通孔連接至該第二層級中的該另一金屬化線。
在本發明的一實施例中,一種結構具有一第一金屬化層級,該第一金屬化層級具有一金屬化線,該金屬化線被分割為相互斷開的兩個區段。該結構具有位於該第一金屬化層級上方的一第二金屬化層級,該第二層級具有一介電層、通過延伸通過該介電層的一個導電通孔連接至該第一層級中的一個區段的一個金屬線、以及通過延伸通過該介電層級的另一個導電通孔連接至該第一層級中的另一區段的另一金屬化線。第一金屬化層級中的該金屬化線的該一區段具有與該一個導電通孔的一側壁對齊並接觸的一末端,第一金屬化層級中的該金屬化線的該另一區段具有與該另一個導電通孔的一側壁對齊並接觸的一末端。
100‧‧‧結構
101‧‧‧層間介電層
110‧‧‧第一金屬化層級、金屬化層級
111‧‧‧阻障襯墊
112、127‧‧‧導電帽
115、117、125、125a、125b、205‧‧‧金屬化線
115a、115b‧‧‧區段
115c、115d‧‧‧端面
116‧‧‧介電材料
120‧‧‧第二金屬化層級、金屬化層級
121、121a、201‧‧‧介電層
122‧‧‧介質帽
126‧‧‧阻障襯墊
129‧‧‧氣隙
130a、130b‧‧‧導電通孔
140‧‧‧帽體
150‧‧‧圖案化微影堆疊
151‧‧‧有機平坦化層
152‧‧‧抗反射塗層
153‧‧‧光阻層
154‧‧‧開口
155‧‧‧溝槽
160‧‧‧導電阻障材料
165‧‧‧間隙填充介電材料
170‧‧‧共形介質帽層
200‧‧‧第三金屬化層級
202‧‧‧阻障層
206‧‧‧導電帽層
納入並構成本說明書的一部分的附圖說明了本發明的各種實施例,連同上述給出的本發明的一般描述以及下面給出的實施例的詳細描述,用於解釋本發明的實施例。
第1A圖以及第2圖至第9圖為根據本發明的實施例所述的一處理方法的連續製造階段中的橫截面 圖。
第1B圖為第1A圖所示結構的一等距視圖。
參考第1A圖和第1B圖,根據本發明的實施例,描述在形成一第一金屬化層級110以及位於第一金屬化層級110上方的一第二金屬化層級120之後的一結構100。在第1B圖中,為了清晰和易於理解,結構100的一部分,包括介電層121以及金屬化線125的一部分,已被移除。第一金屬化層級110具有一金屬化線115,且可具有額外的金屬化線117和設置在金屬化線115,117之間的介電材料116,如第1B圖中的結構100的等距視圖所示。第一金屬化層級110可設置在一層間介電層101的上方,其可將該金屬化層級與下層電路結構元件或其他金屬化層級電性隔離(未在第1A圖至第9圖中示出)。結構100還具有一第二金屬化層級120,其包括一介電層121、一金屬化線125a、以及另一金屬化線125b,並且可以包括額外的金屬化線125。第二金屬化層級120還具有從金屬化線125a延伸通過介電層121至金屬化線115的一導電通孔130a,以及從金屬化線125b延伸通過介電層121至金屬化線115的另一導電通孔130b。結構100還可以包括設置在第一金屬化層級110上方以及介電層121下方的一介質帽(dielectric cap)122。介質帽122可以是與介電層121的該介電材料不同的一介電材料,並可以具有與介電層121不 同的蝕刻選擇性。例如,介電層121可以是一氧化物介電材料,且介質帽122可以是一氮化物介電材料。在本文中,術語“第一”以及“第二”用於不同的金屬化層級,以表示結構100內的金屬化層級的相對位置以便於參考,而非用於限制。“第一金屬化層級”,如第1A圖至第1B圖中的金屬化層級110,可以對應於一積體電路結構中的第一金屬化層級或最低的金屬化層級,或者可以對應於所述結構中的更高的金屬化層級;同樣的,“第二金屬化層級”,例如金屬化層級120,可以對應於形成於該第一金屬化層級上方的第二金屬化層級,或可以對應於該積體電路結構中的更高的金屬化層級。
積體電路結構中的金屬化層級,無論是第一金屬化層級110或第二金屬化層級120或另一金屬化層級,可大致通過任何適合的製程形成,例如,通過微影蝕刻製程,其中,根據一圖案化硬遮罩,在一介電層(例如介電層121)中蝕刻出溝槽。這樣的製程可以是單曝光圖案化製程、自對準雙圖案化(SADP)製程等。通孔也可以使用類似的蝕刻製程蝕刻通過介電層121,從而形成與金屬化溝槽自對準的通孔。然後,溝槽以及通孔可以填充導電材料以形成金屬化線125,125a,125b及導電通孔130a,130b。在示例性實施例中,如第1A圖及第1B圖所示,導電通孔130a及130b可以是相鄰的導電通孔,兩者的中心分離一跨度D,如第1A圖所示,基本上等於為該積體電路結構所定義的一最小臨界尺寸,例如一層級中的金屬化線之間 的最小間距。由於電路和電路特徵的繼續縮小,金屬化層級的設計規則經常需要將導電通孔隔離為一金屬化層級所定義的最小間距的至少兩倍,這是由於在較低的金屬化層級的製造製程的限制下,例如在一金屬化層級內形成以及切割金屬化線的製程,不能將導電通孔連接到一較低的金屬化層級中的單獨的金屬線上。本文公開和描述的製程可允許兩個導電通孔彼此相鄰地形成,使得其中心以該最小臨界尺寸或最小間距分開,並使得各導電通孔將一上層金屬化層級(例如第二金屬化層級120)的一條金屬化線連接至一較低金屬化層級(例如第一金屬化層級110)的一獨立金屬化線上。
如第1A圖所示的結構100的實施例所描述,第一金屬化層級110可包括設置在金屬化線115下方的一阻障襯墊111。阻障襯墊111也可以設置在金屬化線115的側壁上。第二金屬化層級120可具有設置在金屬化線125,125a,125b,以及導電通孔130a,130b的下方及/或其側壁上的一阻障襯墊126。例如阻障襯墊111和/或阻障襯墊126的一阻障襯墊可以是鈦、氮化鈦、鉭、氮化鉭,或其他阻障襯墊材料,並通過例如化學氣相沉積(CVD)或原子層沉積(ALD)予以形成。可包括一阻障襯墊以防止金屬化線的金屬材料與底層介電層(例如層間介電層101)的材料相互作用或結合。金屬化線115還可以包括金屬化線115上方的一導電帽112。金屬化線125,125a,125b以及導電通孔130a,130b也可以包括一導電帽127。導電帽112,127可 例如為鈷或釕或其他導電材料,並且可以通過例如化學氣相沉積或原子層沉積予以形成。
請參考第2圖,其中相同的元件符號指代第1A圖及第1B圖中的相似特徵。於處理方法的一後續製造階段,一帽體140選擇性地生長在金屬化線125,125a,125b上以及導電通孔130a,130b的上表面上,一圖案化微影堆疊150形成在第二金屬化層級120的上方。如本文所進一步詳述的,在第一金屬化層級110中的金屬化線115的一部分被移除期間,帽體140用於保護金屬化線125a及125b,以及導電通孔130a及130b的上表面。如本文所進一步詳述的,帽體140包括一材料,其抵抗蝕刻介電材料(例如介電層121或介質帽122)的蝕刻製程,抵抗蝕刻製程以移除或“切割”金屬化線115的一部分,並可在不影響結構100的其他部分的情況下隨後被選擇性的移除。帽體140可例如為鎢、鎳、鉬、或鋁的導電體,或例如為矽的半導體,或它們的組合。或者,帽體140可以是絕緣體,例如氧化鉿、氧化鋁、或其組合。帽體140可以是導電體與絕緣體的組合,或者半導體與絕緣體的組合,或者導電體、半導體與絕緣體材料的組合。圖案化微影堆疊150可以包括,例如,一有機平坦化層(OPL)151,一抗反射塗層152,以及一光阻層153。光阻層153經圖案化而具有對準於待蝕刻的介電層121的一部分上方的開口154,如後進一步詳述。
請參考第3圖,其中,相同的元件符號指 代第2圖中的相似特徵,在處理方法的一後續製造階段,圖案化微影堆疊150被選擇性的蝕刻以形成通過圖案化微影堆疊150的一開口154,例如,通過有機平坦化層151,以暴露導電通孔130a與導電通孔130b之間的介電層121a。圖案化微影堆疊150的一個或多個層,例如光阻層153以及抗反射塗層152可在選擇性蝕刻圖案化微影堆疊150之後被移除。
請參考第4圖,其中,相同的元件符號指代第3圖中的相似特徵,在處理方法的一後續製造階段,一溝槽155形成在導電通孔130a以及130b之間的介電層121中,移除由開口154曝光的介電層121a的部分,以暴露金屬化線115的一部分。溝槽155可通過對介電層121具有選擇性的任何蝕刻製程進行蝕刻。導電通孔130a以及130b的作用在於使溝槽155的蝕刻自對準,使得金屬化線115的暴露部分與導電通孔130a以及導電通孔130b的側壁對準。在結構100包括一介質帽122的實施例中,位於導電通孔130a以及130b之間的介質帽122可在蝕刻出介電層121中的溝槽155之後被移除以暴露金屬化線115的部分。圖案化微影堆疊150可以保留在第二金屬化層級120的上方以保護介電層121的其他部分以及介質帽122不受蝕刻製程或蝕刻處理的影響。
請參考第5圖,其中,相同的元件符號指代第4圖中的相似特徵,在處理方法的一後續製造階段,金屬化線115的一部分被移除或“切割”,將金屬化線115 分割為相互分離的兩個區段115a,115b。金屬化線115的部分的移除可通過例如使用蝕刻劑的一蝕刻製程來完成,該蝕刻劑選擇性移除金屬化線115的暴露部分,以及阻障襯墊111與導電帽112的部分,而不影響介電層121、層間介電層101或帽體140。如上所述,帽體140包括抵抗用於蝕刻介電材料的蝕刻製程的一個或多個材料,並抵抗用於移除金屬化線115的一部分的蝕刻製程,使得金屬化線125及125a,125b以及導電通孔130a,130b的上表面在蝕刻處理期間保持完整。在移除金屬化線115之後,金屬化線115的區段115a及115b可具有暴露的端面115c以及115d,根據所選擇的蝕刻劑以及該蝕刻劑的曝光時間長度而定,導電通孔130a以及130b的側壁可以部分被暴露以及回蝕刻,如第5圖所示。
請參考第6圖,其中,相同的元件符號指代第5圖中的相似特徵,在處理方法的一後續製造階段,一導電阻障材料160選擇性地生長在金屬化線115的區段115a的暴露的端面115c以及區段115b的暴露的端面115d的上方,一間隙填充介電材料165沉積在金屬化線115的區段115a,115b之間以及導電通孔130a,130b之間。導電阻障材料160也可以選擇性地生長於導電通孔130a以及導電通孔130b的暴露側壁上方。導電阻障材料160可以通過CVD或ALD製程或其他替代製程生長,且可以是例如鈷、釕或其他導電阻障材料。導電阻障材料不會生長在帽體140的材料上方或粘附在帽體140的材料上。生長導電阻 障材料160可以促進部分地“重建”導電通孔130a及130b的部分,這些部分可能在移除金屬化線115的部分期間被移除,如上所述。如本文所述,導電阻障材料160還可以防止區段115a及115b的金屬材料以及導電通孔130a及130b的金屬材料與間隙填充介電材料165相互作用或結合。
間隙填充介電材料165可以是一介電材料,被選擇用於減小或最小化區段115a及115b之間或導電通孔130a及130b之間的電容。如上所述,導電通孔130a及130b可具有以一跨度隔離的中心,此跨度基本上等於為結構100所定義的一最小臨界尺寸,且導電通孔的之間的電容與導電通孔之間的間隔成反比,導電通孔130a及130b之間的電容可能相對較高。因此,可以使用具有相對較高的的介電常數k的間隙填充介電材料165來降低此電容。例如,間隙填充介電材料165可以是氮摻雜碳化矽。在另一實施例中,間隙填充介電材料165可以是一高k氧化物材料。在一實施例中,間隙填充介電材料165可以是高度共形的,使得間隙填充介電材料165是實心的而沒有空隙或氣隙,因此不會發生夾斷(pinch-off)。在另一替換性實施例中,間隙填充可以是部分的,其可通過在一深度處的夾斷而引入一間隙或氣隙129,使得當間隙填充介電材料165在一後續製造階段中被凹陷時,氣隙129不會被打開。
請參考第7圖,其中,相同的元件符號指代第6圖中的相似特徵,在處理方法的一後續製造階段, 間隙填充介電材料165被凹陷,且帽體140從金屬化線125,125a,125b以及導電通孔130a,130b的上方被移除。雖然在可替換實施例中允許在不移除帽體140的情況下繼續製造,但是例如,如果帽體140為一導電材料,例如鎢,則通常移除帽體140是有利的,使得帽體140不干擾後續的製造製程。類似的,雖然在替換性實施例中,間隙填充介電材料165可能不被凹陷,但是通常,凹陷間隙填充介電材料165是有利的,使得第二金屬化層級120上方不會有高介電常數材料干擾後續製造製程。
請參考第8圖,其中,相同的元件符號指代第7圖中的相似特徵,在處理方法的一後續製造階段,一共形介質帽層170沉積在第二金屬化層級120的上方。共形介質帽層170可以是與介質帽122類似的材料,例如一氮化物基介電材料。
請參考第9圖,其中,相同的元件符號指代第8圖中的相似特徵,在處理方法的一後續製造階段,一第三金屬化層級200形成在共形介質帽層170以及第二金屬化層級120的上方。與第一金屬化層級110或第二金屬化層級120類似,第三金屬化層級200可以包括形成在一介電層201中的一條或多條金屬化線205,且金屬化線205可以包括一阻障層202以及導電帽層206。第三金屬化層級200的製造可以包括本文所述的製程或其他通常用於製造積體電路結構的金屬化層級的製程。
上述方法用於製造積體電路晶片。所得到 的積體電路晶片可以由製造商以原始晶圓形式(例如,作為具有多個未封裝晶片的單一晶圓),一裸晶粒,或一封裝形式予以分佈。在後一種情況下,晶片安裝在單一晶片封裝中(例如,一塑膠載體,具有附接到一主機板或其他更高級別的載體的引線)或一多晶片封裝中(例如,具有表面互連或埋置互連中的一個或兩個的一陶瓷載體)。在任何情況下,晶片可以與其他晶片、分立電路元件和/或其他信號處理裝置集成為一中間產品或一最終產品的一部分。
本文引用的術語,如“垂直”、“水平”等是通過示例而不是通過限制來建立參考框架的。本文使用的術語“水平”被定義為與一半導體基板的一傳統平面平行的一平面,而不管其實際三維空間取向。術語“垂直”和“正常”指的是垂直於水平的方向,正如剛才所定義的。“橫向”一詞是指水平面內的一個方向。諸如“上方”和“下方”這樣的術語用於表示元件或結構相對於彼此的定位,而不是相對高度。
“連接”或“耦合”到另一個元件的一個特徵可以直接連接或耦合到另一個元件,或者,可以存在一個或多個介入元件。如果缺少介入元件,則一個特徵可以是“直接連接”或“直接耦合”到另一個元件。如果存在至少一個介入元件,則一個特徵可以是“間接連接”或“間接耦合”到另一個元件。
為了說明的目的,已經提出了本發明的各種實施例的描述,但不打算窮盡或局限於所公開的實施例。 在不脫離所描述的實施例的範圍和精神的情況下,許多修改和變化對本領域的普通技術人員而言是顯而易見的。本文所使用的術語被選擇來最好地解釋實施例的原理、實際應用或技術改進,而不是市場上所發現的技術,或者使本領域的普通技術人員能夠理解本文所公開的實施例。
Claims (20)
- 一種方法,包括:形成具有第一金屬化線的第一金屬化層級;形成第二金屬化層級於該第一金屬化層級的上方,該第二金屬化層級具有介電層、第二金屬化線、第三金屬化線、從該第二金屬化線延伸通過該介電層至該第一金屬化線的第一導電通孔、以及從該第三金屬化線通過該介電層至該第一金屬化線的第二導電通孔;以及在形成該第二金屬化層級之後,將該第一金屬化線分割為第一區段以及與該第一區段斷開的第二區段,其中,該第一金屬化線的該第一區段通過該第一導電通孔連接至該第二金屬化線,該第一金屬化線的該第二區段由該第二導電通孔連接至該第三金屬化線。
- 如申請專利範圍第1項所述的方法,其中,在分離該第一金屬化線之後,該第一區段具有與該第一導電通孔的第一側壁對齊並接觸的第一端,該第二部分具有與該第二導電通孔的第二側壁對齊並接觸的第二端。
- 如申請專利範圍第1項所述的方法,其中,分離該第一金屬化線包括:蝕刻位於該第一導電通孔與該第二導電通孔之間的該介電層中的溝槽,該蝕刻暴露該第一金屬化線的 一部分;以及移除該第一金屬化線的該暴露部分。
- 如申請專利範圍第3項所述的方法,其中,蝕刻該介電層中的該溝槽包括:形成圖案化微影堆疊於該第二金屬化層級的上方;選擇性蝕刻該圖案化微影堆疊以暴露該第一導電通孔與該第二導電通孔之間的該介電層;以及蝕刻該暴露的介電層以暴露該第一金屬化線的該部分。
- 如申請專利範圍第4項所述的方法,其中,蝕刻該暴露的介電層是通過該第一導電通孔與該第二導電通孔以自對準該第一金屬化線的該部分。
- 如申請專利範圍第4項所述的方法,進一步包括:選擇性地生長帽體於該第二金屬化線以及該第三金屬化線上,在移除該第一金屬化線的該暴露部分期間,該帽體保護該第二金屬化線以及該第三金屬化線以及該第一導電通孔與該第二導電通孔的上表面。
- 如申請專利範圍第6項所述的方法,其中,該帽體為鎢、鎳、鉬、矽、鋁、氧化鉿,或其組合。
- 如申請專利範圍第6項所述的方法,其中,該第一金屬化層級具有位於該第一金屬化線的上方以及該第二金屬化層級的該介電層的下方的介質帽,該介質帽具有與該介電層以及該帽體不同的蝕刻選擇性,且進一 步包括:移除該第一導電通孔與該第二導電通孔之間的該介質帽。
- 如申請專利範圍第6項所述的方法,進一步包括:選擇性生長導電阻障材料於該第一金屬化線的該第一區段與該第二區段的暴露的端面上。
- 如申請專利範圍第9項所述的方法,其中,該導電阻障材料進一步選擇性生長於該第一導電通孔的第一暴露側壁的上方以及該第二導電通孔的第二暴露側壁的上方。
- 如申請專利範圍第9項所述的方法,其中,該導電阻障材料為鈷或釕。
- 如申請專利範圍第6項所述的方法,進一步包括:沉積間隙填充介電材料於該第一金屬化線的該第一區段與該第二區段之間、以及該第一導電通孔與該第二導電通孔之間;移除該帽體;沉積共形介質帽於該第二金屬化層級的上方;以及形成第三金屬化層級於該共形介質帽層的上方。
- 如申請專利範圍第12項所述的方法,其中,該間隙填充介電材料包括氮摻雜碳化矽或高k氧化物材料。
- 如申請專利範圍第12項所述的方法,其中,該間隙填充介電材料包括氣隙。
- 一種結構,包括:積體電路結構的第一金屬化層級,該第一金屬化層級具有被分割為第一區段以及與該第一區段斷開的第二區段的第一金屬化線;以及第二金屬化層級,位於該第一金屬化層級的上方,該第二金屬化層級具有介電層、第二金屬化線、第三金屬化線、從該第二金屬化線延伸通過該介電層至該第一金屬化線的該第一區段的第一導電通孔、以及從該第三金屬化線延伸通過該介電層至該第一金屬化線的該第二區段的第二導電通孔,其中,該第一區段具有與該第一導電通孔的第一側壁對齊並接觸的第一端面,該第二區段具有與該第二導電通孔的第二側壁對齊並接觸的第二端面。
- 如申請專利範圍第15項所述的結構,其中,該第一導電通孔的第一中心與該第二導電通孔的第二中心相隔一跨度,該跨度基本上等於該積體電路結構的最小臨界尺寸。
- 如申請專利範圍第15項所述的結構,進一步包括:間隙填充介電材料,位於該第一金屬化線的該第一區段與該第二區段之間,以及該第一導電通孔與該第二導電通孔之間。
- 如申請專利範圍第17項所述的結構,其中,該間隙填充介電材料為氮摻雜碳化矽或高k氧化物材料。
- 如申請專利範圍第17項所述的結構,其中,該間隙填 充介電材料包括氣隙。
- 如申請專利範圍第15項所述的結構,進一步包括:導電阻障材料,設置於該第一金屬化線的該第一區段的該第一端面、該第一金屬化線的該第二區段的該第二端面、該第一導電通孔的該第一側壁、以及該第二導電通孔的該第二側壁的上方,其中,該導電阻障材料包括鈷或釕。
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