TW201843263A - 異物除去用塗膜形成組成物 - Google Patents
異物除去用塗膜形成組成物 Download PDFInfo
- Publication number
- TW201843263A TW201843263A TW107106956A TW107106956A TW201843263A TW 201843263 A TW201843263 A TW 201843263A TW 107106956 A TW107106956 A TW 107106956A TW 107106956 A TW107106956 A TW 107106956A TW 201843263 A TW201843263 A TW 201843263A
- Authority
- TW
- Taiwan
- Prior art keywords
- coating film
- foreign matter
- substrate
- acid
- removing foreign
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 title claims abstract description 242
- 238000000576 coating method Methods 0.000 title claims abstract description 242
- 239000000203 mixture Substances 0.000 title claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 116
- -1 tetracarboxylic dianhydride compound Chemical class 0.000 claims abstract description 103
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 39
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 238000010304 firing Methods 0.000 claims description 105
- 239000002253 acid Substances 0.000 claims description 37
- 239000012790 adhesive layer Substances 0.000 claims description 29
- 229920000642 polymer Polymers 0.000 claims description 29
- 239000000126 substance Substances 0.000 claims description 24
- 239000002904 solvent Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 238000003672 processing method Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 30
- 239000000243 solution Substances 0.000 description 70
- 150000001875 compounds Chemical class 0.000 description 61
- 235000012431 wafers Nutrition 0.000 description 41
- 238000004090 dissolution Methods 0.000 description 32
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 29
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 28
- 239000000853 adhesive Substances 0.000 description 22
- 230000001070 adhesive effect Effects 0.000 description 22
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 21
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 18
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 15
- 125000003700 epoxy group Chemical group 0.000 description 15
- 235000013824 polyphenols Nutrition 0.000 description 14
- 229940116333 ethyl lactate Drugs 0.000 description 13
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 12
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 10
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 9
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 8
- 238000011161 development Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 125000000962 organic group Chemical group 0.000 description 8
- 229920000768 polyamine Polymers 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000001294 propane Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 5
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 4
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 4
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 4
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 4
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 4
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 3
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 3
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 2
- MQQRFOXFIPBFOV-UHFFFAOYSA-N 1,2-dimethylcyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1(C)C(C(O)=O)C(C(O)=O)C1(C)C(O)=O MQQRFOXFIPBFOV-UHFFFAOYSA-N 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- SJJCQDRGABAVBB-UHFFFAOYSA-N 1-hydroxy-2-naphthoic acid Chemical compound C1=CC=CC2=C(O)C(C(=O)O)=CC=C21 SJJCQDRGABAVBB-UHFFFAOYSA-N 0.000 description 2
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 description 2
- RUFPHBVGCFYCNW-UHFFFAOYSA-N 1-naphthylamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1 RUFPHBVGCFYCNW-UHFFFAOYSA-N 0.000 description 2
- KKTUQAYCCLMNOA-UHFFFAOYSA-N 2,3-diaminobenzoic acid Chemical compound NC1=CC=CC(C(O)=O)=C1N KKTUQAYCCLMNOA-UHFFFAOYSA-N 0.000 description 2
- LDQMZKBIBRAZEA-UHFFFAOYSA-N 2,4-diaminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C(N)=C1 LDQMZKBIBRAZEA-UHFFFAOYSA-N 0.000 description 2
- UIAFKZKHHVMJGS-UHFFFAOYSA-N 2,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1O UIAFKZKHHVMJGS-UHFFFAOYSA-N 0.000 description 2
- GPVDHNVGGIAOQT-UHFFFAOYSA-N 2,4-dimethoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C(OC)=C1 GPVDHNVGGIAOQT-UHFFFAOYSA-N 0.000 description 2
- AKEUNCKRJATALU-UHFFFAOYSA-N 2,6-dihydroxybenzoic acid Chemical compound OC(=O)C1=C(O)C=CC=C1O AKEUNCKRJATALU-UHFFFAOYSA-N 0.000 description 2
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- SYEWHONLFGZGLK-UHFFFAOYSA-N 2-[1,3-bis(oxiran-2-ylmethoxy)propan-2-yloxymethyl]oxirane Chemical compound C1OC1COCC(OCC1OC1)COCC1CO1 SYEWHONLFGZGLK-UHFFFAOYSA-N 0.000 description 2
- SEFYJVFBMNOLBK-UHFFFAOYSA-N 2-[2-[2-(oxiran-2-ylmethoxy)ethoxy]ethoxymethyl]oxirane Chemical compound C1OC1COCCOCCOCC1CO1 SEFYJVFBMNOLBK-UHFFFAOYSA-N 0.000 description 2
- SHKUUQIDMUMQQK-UHFFFAOYSA-N 2-[4-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COCCCCOCC1CO1 SHKUUQIDMUMQQK-UHFFFAOYSA-N 0.000 description 2
- WZKPOAWBXHEIKH-UHFFFAOYSA-N 2-[[4-[1,3-bis[4-(oxiran-2-ylmethoxy)phenyl]propyl]phenoxy]methyl]oxirane Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C=1C=CC(OCC2OC2)=CC=1)CCC(C=C1)=CC=C1OCC1CO1 WZKPOAWBXHEIKH-UHFFFAOYSA-N 0.000 description 2
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- WHNIMRYJAUUVQJ-UHFFFAOYSA-N 2-hydroxy-1,2-diphenylethanone;4-methylbenzenesulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1.C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 WHNIMRYJAUUVQJ-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- YQUVCSBJEUQKSH-UHFFFAOYSA-N 3,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C(O)=C1 YQUVCSBJEUQKSH-UHFFFAOYSA-N 0.000 description 2
- UENRXLSRMCSUSN-UHFFFAOYSA-N 3,5-diaminobenzoic acid Chemical compound NC1=CC(N)=CC(C(O)=O)=C1 UENRXLSRMCSUSN-UHFFFAOYSA-N 0.000 description 2
- UYEMGAFJOZZIFP-UHFFFAOYSA-N 3,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1 UYEMGAFJOZZIFP-UHFFFAOYSA-N 0.000 description 2
- QMWOUSYSNFCKAZ-UHFFFAOYSA-N 3,7-dihydroxynaphthalene-2-carboxylic acid Chemical compound OC1=CC=C2C=C(O)C(C(=O)O)=CC2=C1 QMWOUSYSNFCKAZ-UHFFFAOYSA-N 0.000 description 2
- ALKYHXVLJMQRLQ-UHFFFAOYSA-N 3-Hydroxy-2-naphthoate Chemical compound C1=CC=C2C=C(O)C(C(=O)O)=CC2=C1 ALKYHXVLJMQRLQ-UHFFFAOYSA-N 0.000 description 2
- IJFXRHURBJZNAO-UHFFFAOYSA-N 3-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1 IJFXRHURBJZNAO-UHFFFAOYSA-N 0.000 description 2
- JJYPMNFTHPTTDI-UHFFFAOYSA-N 3-methylaniline Chemical compound CC1=CC=CC(N)=C1 JJYPMNFTHPTTDI-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 description 2
- OECTYKWYRCHAKR-UHFFFAOYSA-N 4-vinylcyclohexene dioxide Chemical compound C1OC1C1CC2OC2CC1 OECTYKWYRCHAKR-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ILUJQPXNXACGAN-UHFFFAOYSA-N O-methylsalicylic acid Chemical compound COC1=CC=CC=C1C(O)=O ILUJQPXNXACGAN-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000004147 Sorbitan trioleate Substances 0.000 description 2
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 125000005577 anthracene group Chemical group 0.000 description 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 2
- 229950011260 betanaphthol Drugs 0.000 description 2
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical group OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 2
- 229940106691 bisphenol a Drugs 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 2
- 229920001038 ethylene copolymer Polymers 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- YDSWCNNOKPMOTP-UHFFFAOYSA-N mellitic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O YDSWCNNOKPMOTP-UHFFFAOYSA-N 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- OENHRRVNRZBNNS-UHFFFAOYSA-N naphthalene-1,8-diol Chemical compound C1=CC(O)=C2C(O)=CC=CC2=C1 OENHRRVNRZBNNS-UHFFFAOYSA-N 0.000 description 2
- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- RNVCVTLRINQCPJ-UHFFFAOYSA-N o-toluidine Chemical compound CC1=CC=CC=C1N RNVCVTLRINQCPJ-UHFFFAOYSA-N 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- LPNBBFKOUUSUDB-UHFFFAOYSA-N p-toluic acid Chemical compound CC1=CC=C(C(O)=O)C=C1 LPNBBFKOUUSUDB-UHFFFAOYSA-N 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 235000019337 sorbitan trioleate Nutrition 0.000 description 2
- 229960000391 sorbitan trioleate Drugs 0.000 description 2
- 239000001589 sorbitan tristearate Substances 0.000 description 2
- 235000011078 sorbitan tristearate Nutrition 0.000 description 2
- 229960004129 sorbitan tristearate Drugs 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- CWXCKNWHMYDZFE-UHFFFAOYSA-N 1,2,3,4,5,6-hexamethyl-9h-fluorene Chemical compound CC1=C(C)C(C)=C(C)C2=C1C1=C(C)C(C)=CC=C1C2 CWXCKNWHMYDZFE-UHFFFAOYSA-N 0.000 description 1
- NSZYKXMFFCRNJB-UHFFFAOYSA-N 1,2,3,4-tetramethylcyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1(C)C(C)(C(O)=O)C(C)(C(O)=O)C1(C)C(O)=O NSZYKXMFFCRNJB-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- CRXBTDWNHVBEIC-UHFFFAOYSA-N 1,2-dimethyl-9h-fluorene Chemical compound C1=CC=C2CC3=C(C)C(C)=CC=C3C2=C1 CRXBTDWNHVBEIC-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- XLHUBROMZOAQMV-UHFFFAOYSA-N 1,4-benzosemiquinone Chemical group [O]C1=CC=C(O)C=C1 XLHUBROMZOAQMV-UHFFFAOYSA-N 0.000 description 1
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-dioxonaphthalene Natural products C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 1
- BOKGTLAJQHTOKE-UHFFFAOYSA-N 1,5-dihydroxynaphthalene Chemical compound C1=CC=C2C(O)=CC=CC2=C1O BOKGTLAJQHTOKE-UHFFFAOYSA-N 0.000 description 1
- HLRHGNXBKIAWLH-UHFFFAOYSA-N 1,6-dibromo-2h-naphthalen-1-ol Chemical compound BrC1=CC=C2C(O)(Br)CC=CC2=C1 HLRHGNXBKIAWLH-UHFFFAOYSA-N 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- RAXXWHJGRGGZCU-UHFFFAOYSA-N 1-[2-(3-amino-4-methyl-9H-fluoren-1-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-4-methyl-9H-fluoren-3-amine Chemical compound NC=1C=C(C=2CC3=CC=CC=C3C2C1C)C(C(F)(F)F)(C(F)(F)F)C1=CC(=C(C=2C3=CC=CC=C3CC12)C)N RAXXWHJGRGGZCU-UHFFFAOYSA-N 0.000 description 1
- FHMMQQXRSYSWCM-UHFFFAOYSA-N 1-aminonaphthalen-2-ol Chemical compound C1=CC=C2C(N)=C(O)C=CC2=C1 FHMMQQXRSYSWCM-UHFFFAOYSA-N 0.000 description 1
- FQJZPYXGPYJJIH-UHFFFAOYSA-N 1-bromonaphthalen-2-ol Chemical compound C1=CC=CC2=C(Br)C(O)=CC=C21 FQJZPYXGPYJJIH-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- FUWDFGKRNIDKAE-UHFFFAOYSA-N 1-butoxypropan-2-yl acetate Chemical compound CCCCOCC(C)OC(C)=O FUWDFGKRNIDKAE-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- QPAWHGVDCJWYRJ-UHFFFAOYSA-N 1-hydroxypyrrolidine-2,5-dione;trifluoromethanesulfonic acid Chemical compound ON1C(=O)CCC1=O.OS(=O)(=O)C(F)(F)F QPAWHGVDCJWYRJ-UHFFFAOYSA-N 0.000 description 1
- UCHNVSDXSPIKRG-UHFFFAOYSA-N 1-methoxy-3-(3-methoxyphenyl)benzene Chemical group COC1=CC=CC(C=2C=C(OC)C=CC=2)=C1 UCHNVSDXSPIKRG-UHFFFAOYSA-N 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- WCZNKVPCIFMXEQ-UHFFFAOYSA-N 2,3,5,6-tetramethylbenzene-1,4-diamine Chemical compound CC1=C(C)C(N)=C(C)C(C)=C1N WCZNKVPCIFMXEQ-UHFFFAOYSA-N 0.000 description 1
- FODBVCSYJKNBLO-UHFFFAOYSA-N 2,3-dimethoxybenzoic acid Chemical compound COC1=CC=CC(C(O)=O)=C1OC FODBVCSYJKNBLO-UHFFFAOYSA-N 0.000 description 1
- NJQJGRGGIUNVAB-UHFFFAOYSA-N 2,4,4,6-tetrabromocyclohexa-2,5-dien-1-one Chemical compound BrC1=CC(Br)(Br)C=C(Br)C1=O NJQJGRGGIUNVAB-UHFFFAOYSA-N 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- MCMHZGRRCCQFMZ-UHFFFAOYSA-N 2,4,6-tris[(4-hydroxyphenyl)methyl]benzene-1,3-diol Chemical compound C1=CC(O)=CC=C1CC1=CC(CC=2C=CC(O)=CC=2)=C(O)C(CC=2C=CC(O)=CC=2)=C1O MCMHZGRRCCQFMZ-UHFFFAOYSA-N 0.000 description 1
- JVMSQRAXNZPDHF-UHFFFAOYSA-N 2,4-diaminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C(N)=C1 JVMSQRAXNZPDHF-UHFFFAOYSA-N 0.000 description 1
- ORBBRCGLUKANIM-UHFFFAOYSA-N 2,4-diaminobenzenethiol Chemical compound NC1=CC=C(S)C(N)=C1 ORBBRCGLUKANIM-UHFFFAOYSA-N 0.000 description 1
- PSGUDVJPEWTBRM-UHFFFAOYSA-N 2,4-dibromonaphthalen-1-ol Chemical compound C1=CC=C2C(O)=C(Br)C=C(Br)C2=C1 PSGUDVJPEWTBRM-UHFFFAOYSA-N 0.000 description 1
- ZTWOFIDYVNDJSW-UHFFFAOYSA-N 2,4-dihydroxy-1h-naphthalene-2-carboxylic acid Chemical compound C1=CC=C2C(O)=CC(C(=O)O)(O)CC2=C1 ZTWOFIDYVNDJSW-UHFFFAOYSA-N 0.000 description 1
- HEAHMJLHQCESBZ-UHFFFAOYSA-N 2,5-diaminobenzenesulfonic acid Chemical compound NC1=CC=C(N)C(S(O)(=O)=O)=C1 HEAHMJLHQCESBZ-UHFFFAOYSA-N 0.000 description 1
- ANOCYDFVIZFQDK-UHFFFAOYSA-N 2,5-diaminobenzenethiol Chemical compound NC1=CC=C(N)C(S)=C1 ANOCYDFVIZFQDK-UHFFFAOYSA-N 0.000 description 1
- UONVFNLDGRWLKF-UHFFFAOYSA-N 2,5-diaminobenzoic acid Chemical compound NC1=CC=C(N)C(C(O)=O)=C1 UONVFNLDGRWLKF-UHFFFAOYSA-N 0.000 description 1
- XQRUEDXXCQDNOT-UHFFFAOYSA-N 2,5-diaminophenol Chemical compound NC1=CC=C(N)C(O)=C1 XQRUEDXXCQDNOT-UHFFFAOYSA-N 0.000 description 1
- WIOZZYWDYUOMAY-UHFFFAOYSA-N 2,5-diaminoterephthalic acid Chemical compound NC1=CC(C(O)=O)=C(N)C=C1C(O)=O WIOZZYWDYUOMAY-UHFFFAOYSA-N 0.000 description 1
- NYJBTJMNTNCTCP-UHFFFAOYSA-N 2,5-dimethoxybenzoic acid Chemical compound COC1=CC=C(OC)C(C(O)=O)=C1 NYJBTJMNTNCTCP-UHFFFAOYSA-N 0.000 description 1
- GHJUWGHWJYULLK-UHFFFAOYSA-N 2,6-dibromonaphthalene-1,5-diol Chemical compound BrC1=CC=C2C(O)=C(Br)C=CC2=C1O GHJUWGHWJYULLK-UHFFFAOYSA-N 0.000 description 1
- FNKPPRUFIDXTQK-UHFFFAOYSA-N 2,6-dichloronaphthalen-1-ol Chemical compound ClC1=CC=C2C(O)=C(Cl)C=CC2=C1 FNKPPRUFIDXTQK-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical compound OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 description 1
- RFCQDOVPMUSZMN-UHFFFAOYSA-N 2-Naphthalenethiol Chemical compound C1=CC=CC2=CC(S)=CC=C21 RFCQDOVPMUSZMN-UHFFFAOYSA-N 0.000 description 1
- PPEASEWKOGNDKZ-UHFFFAOYSA-N 2-[[2,6-bis(oxiran-2-ylmethyl)phenoxy]methyl]oxirane Chemical compound C1OC1COC(C(=CC=C1)CC2OC2)=C1CC1CO1 PPEASEWKOGNDKZ-UHFFFAOYSA-N 0.000 description 1
- UTYHQSKRFPHMQQ-UHFFFAOYSA-N 2-amino-4-(3-amino-4-hydroxyphenoxy)phenol Chemical compound C1=C(O)C(N)=CC(OC=2C=C(N)C(O)=CC=2)=C1 UTYHQSKRFPHMQQ-UHFFFAOYSA-N 0.000 description 1
- KCFVSHSJPIVGCG-UHFFFAOYSA-N 2-amino-4-[(3-amino-4-hydroxyphenyl)methyl]phenol Chemical compound C1=C(O)C(N)=CC(CC=2C=C(N)C(O)=CC=2)=C1 KCFVSHSJPIVGCG-UHFFFAOYSA-N 0.000 description 1
- ZTZLVQYRXBHWEU-UHFFFAOYSA-N 2-amino-4-[1-(3-amino-4-hydroxyphenyl)-9h-fluoren-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C=2C(=C3C(C4=CC=CC=C4C3)=CC=2)C=2C=C(N)C(O)=CC=2)=C1 ZTZLVQYRXBHWEU-UHFFFAOYSA-N 0.000 description 1
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 1
- IXXWHNGEOPEEIT-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-sulfanylphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]benzenethiol Chemical compound C1=C(S)C(N)=CC(C(C=2C=C(N)C(S)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 IXXWHNGEOPEEIT-UHFFFAOYSA-N 0.000 description 1
- HHMSBDXTVPALFJ-UHFFFAOYSA-N 2-amino-4-[3-(3-amino-4-hydroxyphenoxy)phenoxy]phenol Chemical compound C1=C(O)C(N)=CC(OC=2C=C(OC=3C=C(N)C(O)=CC=3)C=CC=2)=C1 HHMSBDXTVPALFJ-UHFFFAOYSA-N 0.000 description 1
- SWNZREBLXVJYFP-UHFFFAOYSA-N 2-amino-4-[4-(3-amino-4-hydroxyphenoxy)phenoxy]phenol Chemical compound C1=C(O)C(N)=CC(OC=2C=CC(OC=3C=C(N)C(O)=CC=3)=CC=2)=C1 SWNZREBLXVJYFP-UHFFFAOYSA-N 0.000 description 1
- LVVVDGUPDKSHPO-UHFFFAOYSA-N 2-amino-4-[4-[2-[4-(3-amino-4-hydroxyphenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]phenol Chemical compound C1=C(O)C(N)=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C(O)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 LVVVDGUPDKSHPO-UHFFFAOYSA-N 0.000 description 1
- JODRZMJXPQGFIQ-UHFFFAOYSA-N 2-amino-5-(4-amino-3,5-dicarboxyphenoxy)benzene-1,3-dicarboxylic acid Chemical compound C1=C(C(O)=O)C(N)=C(C(O)=O)C=C1OC1=CC(C(O)=O)=C(N)C(C(O)=O)=C1 JODRZMJXPQGFIQ-UHFFFAOYSA-N 0.000 description 1
- ZTKUFAMMURREFM-UHFFFAOYSA-N 2-amino-5-(4-amino-3,5-dihydroxyphenoxy)benzene-1,3-diol Chemical compound C1=C(O)C(N)=C(O)C=C1OC1=CC(O)=C(N)C(O)=C1 ZTKUFAMMURREFM-UHFFFAOYSA-N 0.000 description 1
- IPUDDYNTXBAEEE-UHFFFAOYSA-N 2-amino-5-(4-amino-3-carboxy-5-methylphenyl)-3-methylbenzoic acid Chemical group OC(=O)C1=C(N)C(C)=CC(C=2C=C(C(N)=C(C)C=2)C(O)=O)=C1 IPUDDYNTXBAEEE-UHFFFAOYSA-N 0.000 description 1
- QENAAWWGMWPNDK-UHFFFAOYSA-N 2-amino-5-(4-amino-3-carboxyphenoxy)benzoic acid Chemical compound C1=C(C(O)=O)C(N)=CC=C1OC1=CC=C(N)C(C(O)=O)=C1 QENAAWWGMWPNDK-UHFFFAOYSA-N 0.000 description 1
- IIQLVLWFQUUZII-UHFFFAOYSA-N 2-amino-5-(4-amino-3-carboxyphenyl)benzoic acid Chemical group C1=C(C(O)=O)C(N)=CC=C1C1=CC=C(N)C(C(O)=O)=C1 IIQLVLWFQUUZII-UHFFFAOYSA-N 0.000 description 1
- IEYDZIVFLWNSAN-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxy-5-methoxyphenyl)-3-methoxyphenol Chemical group OC1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=C(O)C=2)=C1 IEYDZIVFLWNSAN-UHFFFAOYSA-N 0.000 description 1
- KUJLIFOWARDOBS-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxy-5-methylphenyl)-3-methylphenol Chemical group OC1=C(N)C(C)=CC(C=2C=C(O)C(N)=C(C)C=2)=C1 KUJLIFOWARDOBS-UHFFFAOYSA-N 0.000 description 1
- FFXSDAGPJYALFE-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenoxy)phenol Chemical compound C1=C(O)C(N)=CC=C1OC1=CC=C(N)C(O)=C1 FFXSDAGPJYALFE-UHFFFAOYSA-N 0.000 description 1
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 1
- AQFWIZKIYOMJED-UHFFFAOYSA-N 2-amino-5-(4-amino-3-sulfanylphenoxy)benzenethiol Chemical compound C1=C(S)C(N)=CC=C1OC1=CC=C(N)C(S)=C1 AQFWIZKIYOMJED-UHFFFAOYSA-N 0.000 description 1
- NFSOOPQRTBEFDR-UHFFFAOYSA-N 2-amino-5-(4-amino-3-sulfophenyl)benzenesulfonic acid Chemical compound C1=C(S(O)(=O)=O)C(N)=CC=C1C1=CC=C(N)C(S(O)(=O)=O)=C1 NFSOOPQRTBEFDR-UHFFFAOYSA-N 0.000 description 1
- VDVPOGRFHDGJLD-UHFFFAOYSA-N 2-amino-5-[(4-amino-3,5-dihydroxyphenyl)methyl]benzene-1,3-diol Chemical compound C1=C(O)C(N)=C(O)C=C1CC1=CC(O)=C(N)C(O)=C1 VDVPOGRFHDGJLD-UHFFFAOYSA-N 0.000 description 1
- RCYNJDVUURMJOZ-UHFFFAOYSA-N 2-amino-5-[(4-amino-3-hydroxyphenyl)methyl]phenol Chemical compound C1=C(O)C(N)=CC=C1CC1=CC=C(N)C(O)=C1 RCYNJDVUURMJOZ-UHFFFAOYSA-N 0.000 description 1
- IYOLSZYAAACSNO-UHFFFAOYSA-N 2-amino-5-[1-(4-amino-3-hydroxyphenyl)-9H-fluoren-2-yl]phenol Chemical compound NC1=C(C=C(C=C1)C1=C(C=2CC3=CC=CC=C3C=2C=C1)C1=CC(=C(C=C1)N)O)O IYOLSZYAAACSNO-UHFFFAOYSA-N 0.000 description 1
- UDIVHTFGNXXRLP-UHFFFAOYSA-N 2-amino-5-[2-(4-amino-3,5-dihydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]benzene-1,3-diol Chemical compound C1=C(O)C(N)=C(O)C=C1C(C(F)(F)F)(C(F)(F)F)C1=CC(O)=C(N)C(O)=C1 UDIVHTFGNXXRLP-UHFFFAOYSA-N 0.000 description 1
- ZDRNVPNSQJRIRN-UHFFFAOYSA-N 2-amino-5-[2-(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C(O)=C1 ZDRNVPNSQJRIRN-UHFFFAOYSA-N 0.000 description 1
- MXLURKCJLQLQFB-UHFFFAOYSA-N 2-amino-5-[3-(4-amino-3-carboxyphenoxy)phenoxy]benzoic acid Chemical compound C1=C(C(O)=O)C(N)=CC=C1OC1=CC=CC(OC=2C=C(C(N)=CC=2)C(O)=O)=C1 MXLURKCJLQLQFB-UHFFFAOYSA-N 0.000 description 1
- MESFSCWCECYZNL-UHFFFAOYSA-N 2-amino-5-[3-(4-amino-3-hydroxyphenoxy)phenoxy]phenol Chemical compound C1=C(O)C(N)=CC=C1OC1=CC=CC(OC=2C=C(O)C(N)=CC=2)=C1 MESFSCWCECYZNL-UHFFFAOYSA-N 0.000 description 1
- WWNRGGGRPYCSSH-UHFFFAOYSA-N 2-amino-5-[4-(4-amino-3-carboxyphenoxy)phenoxy]benzoic acid Chemical compound C1=C(C(O)=O)C(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C(C(O)=O)=C1 WWNRGGGRPYCSSH-UHFFFAOYSA-N 0.000 description 1
- JJYDMOLEJAEVPU-UHFFFAOYSA-N 2-amino-5-[4-(4-amino-3-hydroxyphenoxy)phenoxy]phenol Chemical compound C1=C(O)C(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C(O)=C1 JJYDMOLEJAEVPU-UHFFFAOYSA-N 0.000 description 1
- PCIQYJOYHNJHHC-UHFFFAOYSA-N 2-amino-5-[4-[2-[4-(4-amino-3-carboxyphenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]benzoic acid Chemical compound C1=C(C(O)=O)C(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=C(C(N)=CC=3)C(O)=O)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 PCIQYJOYHNJHHC-UHFFFAOYSA-N 0.000 description 1
- VDJYAQQFXQEJQF-UHFFFAOYSA-N 2-amino-5-[4-[2-[4-(4-amino-3-carboxyphenoxy)phenyl]propan-2-yl]phenoxy]benzoic acid Chemical compound C=1C=C(OC=2C=C(C(N)=CC=2)C(O)=O)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C(C(O)=O)=C1 VDJYAQQFXQEJQF-UHFFFAOYSA-N 0.000 description 1
- ZMCHBSMFKQYNKA-UHFFFAOYSA-N 2-aminobenzenesulfonic acid Chemical compound NC1=CC=CC=C1S(O)(=O)=O ZMCHBSMFKQYNKA-UHFFFAOYSA-N 0.000 description 1
- XDZMPRGFOOFSBL-UHFFFAOYSA-N 2-ethoxybenzoic acid Chemical compound CCOC1=CC=CC=C1C(O)=O XDZMPRGFOOFSBL-UHFFFAOYSA-N 0.000 description 1
- BYVKCQBOHJQWIO-UHFFFAOYSA-N 2-ethoxyethyl propanoate Chemical compound CCOCCOC(=O)CC BYVKCQBOHJQWIO-UHFFFAOYSA-N 0.000 description 1
- MYFBSSDLYGWAHH-UHFFFAOYSA-N 2-ethoxynaphthalene-1-carboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(OCC)=CC=C21 MYFBSSDLYGWAHH-UHFFFAOYSA-N 0.000 description 1
- MLPVBIWIRCKMJV-UHFFFAOYSA-N 2-ethylaniline Chemical compound CCC1=CC=CC=C1N MLPVBIWIRCKMJV-UHFFFAOYSA-N 0.000 description 1
- LODHFNUFVRVKTH-ZHACJKMWSA-N 2-hydroxy-n'-[(e)-3-phenylprop-2-enoyl]benzohydrazide Chemical compound OC1=CC=CC=C1C(=O)NNC(=O)\C=C\C1=CC=CC=C1 LODHFNUFVRVKTH-ZHACJKMWSA-N 0.000 description 1
- JCCIFDCPHCKATH-UHFFFAOYSA-N 2-methylbutan-2-yl acetate Chemical compound CCC(C)(C)OC(C)=O JCCIFDCPHCKATH-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- UOBYKYZJUGYBDK-UHFFFAOYSA-N 2-naphthoic acid Chemical compound C1=CC=CC2=CC(C(=O)O)=CC=C21 UOBYKYZJUGYBDK-UHFFFAOYSA-N 0.000 description 1
- HAZQZUFYRLFOLC-UHFFFAOYSA-N 2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C=2C=CC=CC=2)=N1 HAZQZUFYRLFOLC-UHFFFAOYSA-N 0.000 description 1
- XVLLZWIERLZPTK-UHFFFAOYSA-N 2-phenylethane-1,1,1-triol Chemical compound OC(O)(O)CC1=CC=CC=C1 XVLLZWIERLZPTK-UHFFFAOYSA-N 0.000 description 1
- YMTYZTXUZLQUSF-UHFFFAOYSA-N 3,3'-Dimethylbisphenol A Chemical compound C1=C(O)C(C)=CC(C(C)(C)C=2C=C(C)C(O)=CC=2)=C1 YMTYZTXUZLQUSF-UHFFFAOYSA-N 0.000 description 1
- QXGJCWSBOZXWOV-UHFFFAOYSA-N 3,4-dihydroxyphthalic acid Chemical compound OC(=O)C1=CC=C(O)C(O)=C1C(O)=O QXGJCWSBOZXWOV-UHFFFAOYSA-N 0.000 description 1
- NSWDWUHBMOIGOA-UHFFFAOYSA-N 3,5-diaminobenzenesulfonic acid Chemical compound NC1=CC(N)=CC(S(O)(=O)=O)=C1 NSWDWUHBMOIGOA-UHFFFAOYSA-N 0.000 description 1
- OFDLUBMEDQSHJY-UHFFFAOYSA-N 3,5-diaminobenzenethiol Chemical compound NC1=CC(N)=CC(S)=C1 OFDLUBMEDQSHJY-UHFFFAOYSA-N 0.000 description 1
- WFNVGXBEWXBZPL-UHFFFAOYSA-N 3,5-diaminophenol Chemical compound NC1=CC(N)=CC(O)=C1 WFNVGXBEWXBZPL-UHFFFAOYSA-N 0.000 description 1
- YELLAPKUWRTITI-UHFFFAOYSA-N 3,5-dihydroxynaphthalene-2-carboxylic acid Chemical compound C1=CC(O)=C2C=C(O)C(C(=O)O)=CC2=C1 YELLAPKUWRTITI-UHFFFAOYSA-N 0.000 description 1
- YWQIVUUGLJFRHG-UHFFFAOYSA-N 3,7-dihydroxynaphthalene-1-carboxylic acid Chemical compound C1=C(O)C=C2C(C(=O)O)=CC(O)=CC2=C1 YWQIVUUGLJFRHG-UHFFFAOYSA-N 0.000 description 1
- OLQWMCSSZKNOLQ-UHFFFAOYSA-N 3-(2,5-dioxooxolan-3-yl)oxolane-2,5-dione Chemical compound O=C1OC(=O)CC1C1C(=O)OC(=O)C1 OLQWMCSSZKNOLQ-UHFFFAOYSA-N 0.000 description 1
- AJHPGXZOIAYYDW-UHFFFAOYSA-N 3-(2-cyanophenyl)-2-[(2-methylpropan-2-yl)oxycarbonylamino]propanoic acid Chemical compound CC(C)(C)OC(=O)NC(C(O)=O)CC1=CC=CC=C1C#N AJHPGXZOIAYYDW-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- OSGCDVKVZWMYBG-UHFFFAOYSA-N 3-(4-hydroxyphenoxy)benzoic acid Chemical compound OC(=O)C1=CC=CC(OC=2C=CC(O)=CC=2)=C1 OSGCDVKVZWMYBG-UHFFFAOYSA-N 0.000 description 1
- MFTFTIALAXXIMU-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MFTFTIALAXXIMU-UHFFFAOYSA-N 0.000 description 1
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 1
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 1
- 229940018563 3-aminophenol Drugs 0.000 description 1
- UDAQUPSJOGVPIX-UHFFFAOYSA-N 3-hydroxy-7-methoxynaphthalene-2-carboxylic acid Chemical compound C1=C(O)C(C(O)=O)=CC2=CC(OC)=CC=C21 UDAQUPSJOGVPIX-UHFFFAOYSA-N 0.000 description 1
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 1
- NXTDJHZGHOFSQG-UHFFFAOYSA-N 3-phenoxybenzoic acid Chemical compound OC(=O)C1=CC=CC(OC=2C=CC=CC=2)=C1 NXTDJHZGHOFSQG-UHFFFAOYSA-N 0.000 description 1
- XNLWJFYYOIRPIO-UHFFFAOYSA-N 3-phenylbenzoic acid Chemical compound OC(=O)C1=CC=CC(C=2C=CC=CC=2)=C1 XNLWJFYYOIRPIO-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- YZBCICVNBHNLTK-UHFFFAOYSA-N 4,5-dihydroxyphthalic acid Chemical compound OC(=O)C1=CC(O)=C(O)C=C1C(O)=O YZBCICVNBHNLTK-UHFFFAOYSA-N 0.000 description 1
- ILPDVOFDSNNCNY-UHFFFAOYSA-N 4,6-diaminobenzene-1,3-dicarboxylic acid Chemical compound NC1=CC(N)=C(C(O)=O)C=C1C(O)=O ILPDVOFDSNNCNY-UHFFFAOYSA-N 0.000 description 1
- DPYROBMRMXHROQ-UHFFFAOYSA-N 4,6-diaminobenzene-1,3-diol Chemical compound NC1=CC(N)=C(O)C=C1O DPYROBMRMXHROQ-UHFFFAOYSA-N 0.000 description 1
- WNMKUIQCIRAXBN-UHFFFAOYSA-N 4,7-dibromo-3-hydroxynaphthalene-2-carboxylic acid Chemical compound BrC1=CC=C2C(Br)=C(O)C(C(=O)O)=CC2=C1 WNMKUIQCIRAXBN-UHFFFAOYSA-N 0.000 description 1
- SQNMHJHUPDEXMS-UHFFFAOYSA-N 4-(1,2-dicarboxyethyl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=C2C(C(CC(=O)O)C(O)=O)CC(C(O)=O)C(C(O)=O)C2=C1 SQNMHJHUPDEXMS-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- ZQVKTHRQIXSMGY-UHFFFAOYSA-N 4-Ethylbenzoic acid Chemical compound CCC1=CC=C(C(O)=O)C=C1 ZQVKTHRQIXSMGY-UHFFFAOYSA-N 0.000 description 1
- BOTGCZBEERTTDQ-UHFFFAOYSA-N 4-Methoxy-1-naphthol Chemical compound C1=CC=C2C(OC)=CC=C(O)C2=C1 BOTGCZBEERTTDQ-UHFFFAOYSA-N 0.000 description 1
- FLNVGZMDLLIECD-UHFFFAOYSA-N 4-[(4-amino-3-methyl-5-propan-2-ylphenyl)methyl]-2-methyl-6-propan-2-ylaniline Chemical compound CC1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C)C=2)C(C)C)=C1 FLNVGZMDLLIECD-UHFFFAOYSA-N 0.000 description 1
- IGSBHTZEJMPDSZ-UHFFFAOYSA-N 4-[(4-amino-3-methylcyclohexyl)methyl]-2-methylcyclohexan-1-amine Chemical compound C1CC(N)C(C)CC1CC1CC(C)C(N)CC1 IGSBHTZEJMPDSZ-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- WXYSZTISEJBRHW-UHFFFAOYSA-N 4-[2-[4-[1,1-bis(4-hydroxyphenyl)ethyl]phenyl]propan-2-yl]phenol Chemical compound C=1C=C(C(C)(C=2C=CC(O)=CC=2)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 WXYSZTISEJBRHW-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- LFNFPWYUXXLMGE-UHFFFAOYSA-N 4-[4-[1-[4-(4-aminophenoxy)phenyl]-9H-fluoren-2-yl]phenoxy]aniline Chemical compound NC1=CC=C(OC2=CC=C(C=C2)C2=C(C=3CC4=CC=CC=C4C=3C=C2)C2=CC=C(C=C2)OC2=CC=C(C=C2)N)C=C1 LFNFPWYUXXLMGE-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- FAUAZXVRLVIARB-UHFFFAOYSA-N 4-[[4-[bis(oxiran-2-ylmethyl)amino]phenyl]methyl]-n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC(CC=2C=CC(=CC=2)N(CC2OC2)CC2OC2)=CC=1)CC1CO1 FAUAZXVRLVIARB-UHFFFAOYSA-N 0.000 description 1
- KZTROCYBPMKGAW-UHFFFAOYSA-N 4-[[4-amino-3,5-di(propan-2-yl)phenyl]methyl]-2,6-di(propan-2-yl)aniline Chemical compound CC(C)C1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C(C)C)C=2)C(C)C)=C1 KZTROCYBPMKGAW-UHFFFAOYSA-N 0.000 description 1
- ALYNCZNDIQEVRV-PZFLKRBQSA-N 4-amino-3,5-ditritiobenzoic acid Chemical compound [3H]c1cc(cc([3H])c1N)C(O)=O ALYNCZNDIQEVRV-PZFLKRBQSA-N 0.000 description 1
- ORABWYPHDRBFAX-UHFFFAOYSA-N 4-bromo-1-hydroxynaphthalene-2-carboxylic acid Chemical compound C1=CC=CC2=C(O)C(C(=O)O)=CC(Br)=C21 ORABWYPHDRBFAX-UHFFFAOYSA-N 0.000 description 1
- HBUFBIFPUAHIDX-UHFFFAOYSA-N 4-bromo-3-hydroxynaphthalene-2-carboxylic acid Chemical compound C1=CC=C2C(Br)=C(O)C(C(=O)O)=CC2=C1 HBUFBIFPUAHIDX-UHFFFAOYSA-N 0.000 description 1
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 1
- MWRVRCAFWBBXTL-UHFFFAOYSA-N 4-hydroxyphthalic acid Chemical compound OC(=O)C1=CC=C(O)C=C1C(O)=O MWRVRCAFWBBXTL-UHFFFAOYSA-N 0.000 description 1
- FJVIHKKXPLPDSV-UHFFFAOYSA-N 4-phenoxybenzene-1,2-diamine Chemical compound C1=C(N)C(N)=CC=C1OC1=CC=CC=C1 FJVIHKKXPLPDSV-UHFFFAOYSA-N 0.000 description 1
- LQMZIIKWGOKGAM-UHFFFAOYSA-N 4-phosphanylaniline Chemical compound NC1=CC=C(P)C=C1 LQMZIIKWGOKGAM-UHFFFAOYSA-N 0.000 description 1
- WNKQDGLSQUASME-UHFFFAOYSA-N 4-sulfophthalic acid Chemical compound OC(=O)C1=CC=C(S(O)(=O)=O)C=C1C(O)=O WNKQDGLSQUASME-UHFFFAOYSA-N 0.000 description 1
- YGYCECQIOXZODZ-UHFFFAOYSA-N 4415-87-6 Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C12 YGYCECQIOXZODZ-UHFFFAOYSA-N 0.000 description 1
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 1
- PHICKPBIPXXFIP-UHFFFAOYSA-N 5-amino-2-(4-amino-5-methyl-2-sulfophenyl)-4-methylbenzenesulfonic acid Chemical compound C1=C(N)C(C)=CC(C=2C(=CC(N)=C(C)C=2)S(O)(=O)=O)=C1S(O)(=O)=O PHICKPBIPXXFIP-UHFFFAOYSA-N 0.000 description 1
- HCNISNCKPIVZDX-UHFFFAOYSA-N 5-tert-butylbenzene-1,2,3-triol Chemical compound CC(C)(C)C1=CC(O)=C(O)C(O)=C1 HCNISNCKPIVZDX-UHFFFAOYSA-N 0.000 description 1
- KAUQJMHLAFIZDU-UHFFFAOYSA-N 6-Hydroxy-2-naphthoic acid Chemical compound C1=C(O)C=CC2=CC(C(=O)O)=CC=C21 KAUQJMHLAFIZDU-UHFFFAOYSA-N 0.000 description 1
- KRHQITZHBNCCEN-UHFFFAOYSA-N 6-acetamidonaphthalene-2-carboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(NC(=O)C)=CC=C21 KRHQITZHBNCCEN-UHFFFAOYSA-N 0.000 description 1
- LGHSULOTIZKEBL-UHFFFAOYSA-N 6-bromo-2-hydroxynaphthalene-1-carboxylic acid Chemical compound BrC1=CC=C2C(C(=O)O)=C(O)C=CC2=C1 LGHSULOTIZKEBL-UHFFFAOYSA-N 0.000 description 1
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 description 1
- JCJUKCIXTRWAQY-UHFFFAOYSA-N 6-hydroxynaphthalene-1-carboxylic acid Chemical compound OC1=CC=C2C(C(=O)O)=CC=CC2=C1 JCJUKCIXTRWAQY-UHFFFAOYSA-N 0.000 description 1
- NHJIDZUQMHKGRE-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-yl 2-(7-oxabicyclo[4.1.0]heptan-4-yl)acetate Chemical compound C1CC2OC2CC1OC(=O)CC1CC2OC2CC1 NHJIDZUQMHKGRE-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- XGWFJBFNAQHLEF-UHFFFAOYSA-N 9-anthroic acid Chemical compound C1=CC=C2C(C(=O)O)=C(C=CC=C3)C3=CC2=C1 XGWFJBFNAQHLEF-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- VOWWYDCFAISREI-UHFFFAOYSA-N Bisphenol AP Chemical compound C=1C=C(O)C=CC=1C(C=1C=CC(O)=CC=1)(C)C1=CC=CC=C1 VOWWYDCFAISREI-UHFFFAOYSA-N 0.000 description 1
- GIXXQTYGFOHYPT-UHFFFAOYSA-N Bisphenol P Chemical compound C=1C=C(C(C)(C)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 GIXXQTYGFOHYPT-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- AVQJSXJTMFEVAK-UHFFFAOYSA-N C1(C2C(O2)O1)OC(=O)C1C(CCCC1)C(=O)O Chemical compound C1(C2C(O2)O1)OC(=O)C1C(CCCC1)C(=O)O AVQJSXJTMFEVAK-UHFFFAOYSA-N 0.000 description 1
- 229920013683 Celanese Polymers 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- GUPWDCNTWZEERB-UHFFFAOYSA-N FC(S(=O)(=O)O)(F)F.C(C)(C)(C)C1=CC=C(C=C1)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC=C(C=C1)C(C)(C)C Chemical compound FC(S(=O)(=O)O)(F)F.C(C)(C)(C)C1=CC=C(C=C1)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC=C(C=C1)C(C)(C)C GUPWDCNTWZEERB-UHFFFAOYSA-N 0.000 description 1
- 229910001200 Ferrotitanium Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- SNJDTIMLLIOEOF-UHFFFAOYSA-N NC(C=CC(OC(C=C1)=CC=C1C(C=CC1=C2CC3=CC=CC=C13)=C2C(C=C1)=CC=C1OC(C=C1)=CC(C(O)=O)=C1N)=C1)=C1C(O)=O Chemical compound NC(C=CC(OC(C=C1)=CC=C1C(C=CC1=C2CC3=CC=CC=C13)=C2C(C=C1)=CC=C1OC(C=C1)=CC(C(O)=O)=C1N)=C1)=C1C(O)=O SNJDTIMLLIOEOF-UHFFFAOYSA-N 0.000 description 1
- OBEBBWDYMHDCOG-UHFFFAOYSA-N NC1=C(C=C(C=C1)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC(=C(C=C1)N)C(=O)O)C(=O)O Chemical compound NC1=C(C=C(C=C1)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC(=C(C=C1)N)C(=O)O)C(=O)O OBEBBWDYMHDCOG-UHFFFAOYSA-N 0.000 description 1
- SSIVWCDBOPORAD-UHFFFAOYSA-N NC1=C(C=C(C=C1C(=O)O)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC(=C(C(=C1)C(=O)O)N)C(=O)O)C(=O)O Chemical compound NC1=C(C=C(C=C1C(=O)O)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC(=C(C(=C1)C(=O)O)N)C(=O)O)C(=O)O SSIVWCDBOPORAD-UHFFFAOYSA-N 0.000 description 1
- GFCLKOQZZAQSFU-UHFFFAOYSA-N NC1=C(C=C(C=C1O)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC(=C(C(=C1)O)N)O)O Chemical compound NC1=C(C=C(C=C1O)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC(=C(C(=C1)O)N)O)O GFCLKOQZZAQSFU-UHFFFAOYSA-N 0.000 description 1
- IUVBLDNEKAFTPQ-UHFFFAOYSA-N NC=1C=C(OC2=CC=C(C=C2)C2=C(C=3CC4=CC=CC=C4C3C=C2)C2=CC=C(C=C2)OC2=CC(=C(C=C2)O)N)C=CC1O Chemical compound NC=1C=C(OC2=CC=C(C=C2)C2=C(C=3CC4=CC=CC=C4C3C=C2)C2=CC=C(C=C2)OC2=CC(=C(C=C2)O)N)C=CC1O IUVBLDNEKAFTPQ-UHFFFAOYSA-N 0.000 description 1
- ICHSXLKXJJJZBD-UHFFFAOYSA-N NC=1C=C(OC2=CC=C(C=C2)C2=C(C=3CC4=CC=CC=C4C3C=C2)C2=CC=C(C=C2)OC2=CC(=CC=C2)N)C=CC1 Chemical compound NC=1C=C(OC2=CC=C(C=C2)C2=C(C=3CC4=CC=CC=C4C3C=C2)C2=CC=C(C=C2)OC2=CC(=CC=C2)N)C=CC1 ICHSXLKXJJJZBD-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- FFFPYJTVNSSLBQ-UHFFFAOYSA-N Phenolphthalin Chemical compound OC(=O)C1=CC=CC=C1C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 FFFPYJTVNSSLBQ-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- JPYHHZQJCSQRJY-UHFFFAOYSA-N Phloroglucinol Natural products CCC=CCC=CCC=CCC=CCCCCC(=O)C1=C(O)C=C(O)C=C1O JPYHHZQJCSQRJY-UHFFFAOYSA-N 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-N Salicylic acid Natural products OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- IJCWFDPJFXGQBN-RYNSOKOISA-N [(2R)-2-[(2R,3R,4S)-4-hydroxy-3-octadecanoyloxyoxolan-2-yl]-2-octadecanoyloxyethyl] octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCCCCCCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCCCCCCCCCCCC IJCWFDPJFXGQBN-RYNSOKOISA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- XIWMTQIUUWJNRP-UHFFFAOYSA-N amidol Chemical compound NC1=CC=C(O)C(N)=C1 XIWMTQIUUWJNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- BKNBVEKCHVXGPH-UHFFFAOYSA-N anthracene-1,4,9,10-tetrol Chemical compound C1=CC=C2C(O)=C3C(O)=CC=C(O)C3=C(O)C2=C1 BKNBVEKCHVXGPH-UHFFFAOYSA-N 0.000 description 1
- YUTJCNNFTOIOGT-UHFFFAOYSA-N anthracene-1,8,9-triol Chemical compound C1=CC(O)=C2C(O)=C3C(O)=CC=CC3=CC2=C1 YUTJCNNFTOIOGT-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000001555 benzenes Chemical group 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 229940114055 beta-resorcylic acid Drugs 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- CURBACXRQKTCKZ-UHFFFAOYSA-N cyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)C(C(O)=O)C1C(O)=O CURBACXRQKTCKZ-UHFFFAOYSA-N 0.000 description 1
- RZIPTXDCNDIINL-UHFFFAOYSA-N cyclohexane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCCC1(C(O)=O)C(O)=O RZIPTXDCNDIINL-UHFFFAOYSA-N 0.000 description 1
- SMEJCQZFRMVYGC-UHFFFAOYSA-N cyclohexane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)C(C(O)=O)C1C(O)=O SMEJCQZFRMVYGC-UHFFFAOYSA-N 0.000 description 1
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical group C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- CLPHAYNBNTVRDI-UHFFFAOYSA-N ditert-butyl propanedioate Chemical compound CC(C)(C)OC(=O)CC(=O)OC(C)(C)C CLPHAYNBNTVRDI-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229940031098 ethanolamine Drugs 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 1
- GFUIDHWFLMPAGY-UHFFFAOYSA-N ethyl 2-hydroxy-2-methylpropanoate Chemical compound CCOC(=O)C(C)(C)O GFUIDHWFLMPAGY-UHFFFAOYSA-N 0.000 description 1
- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 1
- WHRLOJCOIKOQGL-UHFFFAOYSA-N ethyl 2-methoxypropanoate Chemical compound CCOC(=O)C(C)OC WHRLOJCOIKOQGL-UHFFFAOYSA-N 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- YSGBMDFJWFIEDF-UHFFFAOYSA-N methyl 2-hydroxy-3-methylbutanoate Chemical compound COC(=O)C(O)C(C)C YSGBMDFJWFIEDF-UHFFFAOYSA-N 0.000 description 1
- SXEMHNUCWJFSSD-UHFFFAOYSA-N methyl 3,7-dihydroxynaphthalene-2-carboxylate Chemical compound OC1=CC=C2C=C(O)C(C(=O)OC)=CC2=C1 SXEMHNUCWJFSSD-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- YVVBECLPRBAATK-UHFFFAOYSA-N methyl 3-hydroxynaphthalene-2-carboxylate Chemical compound C1=CC=C2C=C(O)C(C(=O)OC)=CC2=C1 YVVBECLPRBAATK-UHFFFAOYSA-N 0.000 description 1
- UKZOPQRTQJERQC-UHFFFAOYSA-N methyl 6-hydroxynaphthalene-2-carboxylate Chemical compound C1=C(O)C=CC2=CC(C(=O)OC)=CC=C21 UKZOPQRTQJERQC-UHFFFAOYSA-N 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- CHDRADPXNRULGA-UHFFFAOYSA-N naphthalene-1,3-dicarboxylic acid Chemical compound C1=CC=CC2=CC(C(=O)O)=CC(C(O)=O)=C21 CHDRADPXNRULGA-UHFFFAOYSA-N 0.000 description 1
- XOOMNEFVDUTJPP-UHFFFAOYSA-N naphthalene-1,3-diol Chemical compound C1=CC=CC2=CC(O)=CC(O)=C21 XOOMNEFVDUTJPP-UHFFFAOYSA-N 0.000 description 1
- OLAPPGSPBNVTRF-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O OLAPPGSPBNVTRF-UHFFFAOYSA-N 0.000 description 1
- ABMFBCRYHDZLRD-UHFFFAOYSA-N naphthalene-1,4-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1 ABMFBCRYHDZLRD-UHFFFAOYSA-N 0.000 description 1
- PCILLCXFKWDRMK-UHFFFAOYSA-N naphthalene-1,4-diol Chemical compound C1=CC=C2C(O)=CC=C(O)C2=C1 PCILLCXFKWDRMK-UHFFFAOYSA-N 0.000 description 1
- DFFZOPXDTCDZDP-UHFFFAOYSA-N naphthalene-1,5-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1C(O)=O DFFZOPXDTCDZDP-UHFFFAOYSA-N 0.000 description 1
- AAPAGLBSROJFGM-UHFFFAOYSA-N naphthalene-1,5-dithiol Chemical compound C1=CC=C2C(S)=CC=CC2=C1S AAPAGLBSROJFGM-UHFFFAOYSA-N 0.000 description 1
- VAWFFNJAPKXVPH-UHFFFAOYSA-N naphthalene-1,6-dicarboxylic acid Chemical compound OC(=O)C1=CC=CC2=CC(C(=O)O)=CC=C21 VAWFFNJAPKXVPH-UHFFFAOYSA-N 0.000 description 1
- FZZQNEVOYIYFPF-UHFFFAOYSA-N naphthalene-1,6-diol Chemical compound OC1=CC=CC2=CC(O)=CC=C21 FZZQNEVOYIYFPF-UHFFFAOYSA-N 0.000 description 1
- JSKSILUXAHIKNP-UHFFFAOYSA-N naphthalene-1,7-dicarboxylic acid Chemical compound C1=CC=C(C(O)=O)C2=CC(C(=O)O)=CC=C21 JSKSILUXAHIKNP-UHFFFAOYSA-N 0.000 description 1
- ZUVBIBLYOCVYJU-UHFFFAOYSA-N naphthalene-1,7-diol Chemical compound C1=CC=C(O)C2=CC(O)=CC=C21 ZUVBIBLYOCVYJU-UHFFFAOYSA-N 0.000 description 1
- HRRDCWDFRIJIQZ-UHFFFAOYSA-N naphthalene-1,8-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=CC2=C1 HRRDCWDFRIJIQZ-UHFFFAOYSA-N 0.000 description 1
- JRNGUTKWMSBIBF-UHFFFAOYSA-N naphthalene-2,3-diol Chemical compound C1=CC=C2C=C(O)C(O)=CC2=C1 JRNGUTKWMSBIBF-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- MNZMMCVIXORAQL-UHFFFAOYSA-N naphthalene-2,6-diol Chemical compound C1=C(O)C=CC2=CC(O)=CC=C21 MNZMMCVIXORAQL-UHFFFAOYSA-N 0.000 description 1
- DFQICHCWIIJABH-UHFFFAOYSA-N naphthalene-2,7-diol Chemical compound C1=CC(O)=CC2=CC(O)=CC=C21 DFQICHCWIIJABH-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000010292 orthophenyl phenol Nutrition 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N p-toluenesulfonic acid Substances CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000008379 phenol ethers Chemical class 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical compound NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001308 poly(aminoacid) Polymers 0.000 description 1
- 229920000141 poly(maleic anhydride) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920006302 stretch film Polymers 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- VXHFNALHLRWIIU-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropanoate Chemical compound CC(C)(C)OC(=O)C(C)(C)C VXHFNALHLRWIIU-UHFFFAOYSA-N 0.000 description 1
- WMOVHXAZOJBABW-UHFFFAOYSA-N tert-butyl acetate Chemical compound CC(=O)OC(C)(C)C WMOVHXAZOJBABW-UHFFFAOYSA-N 0.000 description 1
- LYDRKKWPKKEMNZ-UHFFFAOYSA-N tert-butyl benzoate Chemical compound CC(C)(C)OC(=O)C1=CC=CC=C1 LYDRKKWPKKEMNZ-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- JAELLLITIZHOGQ-UHFFFAOYSA-N tert-butyl propanoate Chemical compound CCC(=O)OC(C)(C)C JAELLLITIZHOGQ-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical group SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- KEHNZFSZKSAKBL-UHFFFAOYSA-N trifluoromethanesulfonic acid 1,2,3-triphenyl-9H-fluorene Chemical compound FC(S(=O)(=O)O)(F)F.C1(=CC=CC=C1)C=1C(=C(C=2CC3=CC=CC=C3C2C1)C1=CC=CC=C1)C1=CC=CC=C1 KEHNZFSZKSAKBL-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02079—Cleaning for reclaiming
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
- C08G73/1028—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous
- C08G73/1032—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous characterised by the solvent(s) used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/1064—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D201/00—Coating compositions based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3719—Polyamides or polyimides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2479/00—Presence of polyamine or polyimide
- C09J2479/08—Presence of polyamine or polyimide polyimide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/42—Application of foam or a temporary coating on the surface to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
- Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Materials Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Paints Or Removers (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Materials For Photolithography (AREA)
Abstract
本發明係提供在半導體裝置製造步驟中,形成於基板上之異物除去用之簡便的方法,提供這種方法所使用之異物除去用塗膜形成組成物。 在半導體基板上,較佳為使用包含由(a)四羧酸二酐化合物與(b)具有至少1個羧基之二胺化合物製造的聚醯胺酸、或由(a)四羧酸二酐化合物、(b)具有至少1個羧基之二胺化合物,及(c)二胺化合物所製造之聚醯胺酸的組成物,於基板上形成塗膜後,以顯影液處理,將存在於塗膜上的異物與塗膜一同除去。
Description
本發明係有關可以簡便的方法除去形成於基板上之異物之異物除去用塗膜形成組成物、基板上之異物除去方法、基板處理方法、積層基板之製造方法。較佳為有關半導體裝置製造之半導體晶圓暫時接著步驟使用之異物除去用塗膜形成組成物。
檢討在半導體裝置之製造中,特別是所謂的後步驟中,將半導體用基板(晶圓)黏貼於支撐基板後,進行背面研磨(研削)、配線製作步驟等,然後,剝離支撐基板,得到所期望之半導體基板的步驟。 黏貼於支撐基板時,藉由其後之步驟(加熱步驟、藥液處理步驟)具有耐性之接著劑(包含聚合物之液狀組成物、背面研磨膠帶、切割膠帶等),黏貼晶圓,其後剝離半導體基板的步驟,但是此時接著劑所包含之接著層有時會以異物(殘渣)殘留於基板上的情形。此乃是於基板上預先形成有配線等之半導體基板表面直接形成接著層時,特別明顯發生。 此異物有時即使以公知的有機溶劑、液狀藥品等洗凈等,也有無法完全去除的情形。 揭示以接著性組成物接著支撐基板與半導體晶圓,研磨半導體晶圓之背面後,以蝕刻液除去接著劑的方法(專利文獻1)。 揭示半導體微影中使用的抗反射膜中,溶解於光阻用顯影液,可與光阻同時顯影除去的抗反射膜(專利文獻2)。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特表2008-532313號公報 [專利文獻2]國際公開第2005/022261號
[發明所欲解決之課題]
本發明欲解決的課題係提供例如在半導體裝置製造之半導體晶圓暫時接著步驟中,形成於基板上之異物除去用之簡便的方法,提供這種方法所使用之異物除去用塗膜形成組成物。 又,本案發明之異物除去用塗膜,只要是基板上之異物除去用時,即無特別限定於上述暫時接著步驟。 [用以解決課題之手段]
發明人等精心檢討結果,發現將上述異物除去用塗膜形成組成物預先塗佈於基板接著面,經燒成形成塗膜後,進行接著步驟、晶圓暫時黏貼步驟及晶圓剝離步驟,然後,以顯影液進行洗凈時,可完全除去接著後之剝離殘渣,且基板無損傷,而完成本發明。
本發明包含以下者。 [1]一種異物除去用塗膜形成組成物,其係包含聚合物及溶劑,可形成溶解於顯影液的塗膜。 [2]如[1]之組成物,其中前述聚合物為具有由(a)四羧酸二酐化合物與(b)具有至少1個羧基之二胺化合物所衍生之結構單位(
structural unit)
的聚醯胺酸。 [3]如[1]之組成物,其中前述聚合物為具有由(a)四羧酸二酐化合物與(b)具有至少1個羧基之二胺化合物所衍生的結構單位,及 具有由(a)四羧酸二酐化合物與(c)與(b)不同之二胺化合物所衍生之結構單位的聚醯胺酸。 [4]如[3]之組成物,其中前述(c)二胺化合物為不具有羧基的二胺化合物。 [5]一種異物除去用塗膜,其特徵係由[1]至[4]中任一項之組成物所成之塗佈膜的燒成物。 [6]一種異物除去方法,其係包含以下步驟: 將[1]至[4]中任一項之組成物塗佈於基板上,經燒成形成塗膜的步驟、於該塗膜上形成異物的步驟,及將該塗膜與異物一同使用顯影液除去的步驟。 [7]如[6]之方法,其中前述形成異物的步驟,包含在前述塗膜上形成接著層的步驟,及其後剝離前述接著層的步驟。 [8]如[7]之方法,其中前述異物為前述接著層的剝離殘渣。 [9]一種基板處理方法,其係包含以下步驟: 將[1]至[4]中任一項之組成物塗佈於第一基板上,經燒成形成塗膜的步驟、 在前述塗膜上形成接著層的步驟、 使第二基板經由前述接著層暫時黏貼於前述第一基板的步驟、 將前述第二基板自前述第一基板剝離的步驟,及 在前述第二基板剝離後,殘存於前述第一基板上之前述塗膜與前述接著層一同使用顯影液除去的步驟。 [10]一種積層基板之製造方法,其係包含以下步驟: 將[1]至[4]中任一項之組成物塗佈於第一基板上,經燒成形成塗膜的步驟、 在前述塗膜上形成接著層的步驟,及 將第二基板黏貼於前述第一基板的步驟。
[11]一種組成物,其係包含聚合物及溶劑之異物除去用塗膜形成組成物,該塗膜溶解於顯影液。 [12]如[11]之組成物,其中上述聚合物為包含具有式(1):(式中,A1
表示4價之有機基,B1
表示3價之有機基)表示之結構之聚醯胺酸的聚合物。 [13]如[12]之組成物,其係進一步包含具有式(1)表示之結構與式(2):(式中,A2
表示4價之有機基,B2
表示2價之有機基)表示之結構之聚醯胺酸的聚合物。 [14]如[12]之組成物,其中前述聚醯胺酸為由(a)四羧酸二酐化合物與(b)具有至少1個羧基之二胺化合物所製造的聚醯胺酸。 [15]如[13]之組成物,其中前述聚醯胺酸為由(a)四羧酸二酐化合物、(b)具有至少1個羧基之二胺化合物,及(c)二胺化合物所製造之聚醯胺酸。 [16]如[14]或[15]之組成物,其中前述(a)四羧酸二酐化合物為具有至少1個苯環結構的四羧酸二酐化合物。 [17]如[14]或[15]之組成物,其中前述(b)具有至少1個羧基之二胺化合物為具有至少1個苯環結構的二胺化合物。 [18]如[15]之組成物,其中前述(c)二胺化合物為具有2個苯環結構的二胺化合物。 [19]如[12]或[13]之組成物,其中前述聚醯胺酸之重量平均分子量為1000~50000。 [20]如[12]或[13]之組成物,其係進一步包含具有至少2個環氧基的化合物。 [21]一種異物除去用塗膜,其係藉由將如[11]至[20]中任一項之組成物塗佈於基板上,經燒成而形成。 [22]一種異物除去方法,其係包含以下步驟: 將如[11]至[20]中任一項之組成物塗佈於基板上,經燒成形成塗膜的步驟、在該塗膜上形成異物的步驟,及使用顯影液除去該塗膜的步驟。 [23]如[22]的方法,其係再包含前述形成塗膜的步驟後,形成接著層,其次剝離接著層的步驟。 [24]如[22]的方法,其中前述異物為接著層形成後的剝離殘渣。 [25]一種基板處理方法,其係包含以下步驟: 將如[11]至[20]中任一項之組成物塗佈於基板上,經燒成形成塗膜的步驟、在該膜上形成接著層的步驟、將另一基板暫時黏貼於該基板的步驟、剝離另一基板的步驟,及使用顯影液除去該膜的步驟。 [26]一種積層基板之製造方法,其係包含以下步驟: 將如[11]至[20]中任一項之組成物塗佈於基板上,經燒成形成塗膜的步驟、於該膜上形成接著層的步驟,及將另一基板黏貼於該基板的步驟。 [發明效果]
特別是半導體晶圓之晶圓暫時黏貼步驟時,預先在基板(加工用基板)形成本發明之異物除去用塗膜,將該基板於支撐基板上,使用接著層接著,然後,在晶圓剝離步驟,自該基板剝離支撐基板,然後,藉由以顯影液洗淨該基板,可同時完全除去本發明之異物除去用塗膜與異物除去用塗膜上之異物。此在半導體製造裝置製造中,大幅降低因異物所致之不良,有助於提高良好晶圓之收率。 本發明之異物除去用塗膜,特別是在半導體晶圓之暫時黏貼步驟使用時,對於暫時黏貼後之半導體基板加工步驟(熱、藥品),具有耐性。 [實施發明之形態]
<異物除去用塗膜形成組成物> 本發明之異物除去用塗膜形成組成物係包含顯影液可溶的聚合物。聚合物只要是溶解於顯影液者時,即無特別限制,但是半導體晶圓之暫時黏貼步驟使用時,以對於暫時黏貼後之半導體基板加工步驟(熱、藥品),具有耐性的聚合物為佳。具體例,可列舉聚醯胺酸、烯烴產生反應之乙烯基聚合聚合物、聚醯胺、聚酯、聚碳酸酯、聚胺基甲酸酯等,較佳為包含具有式(1)表示之結構的聚醯胺酸及溶劑者。此外,包含具有至少2個環氧基的化合物為佳。又,本發明之異物除去用塗膜形成組成物係包含具有式(1)表示之結構與式(2)表示之結構的聚醯胺酸及溶劑者。此外,以包含具有至少2個環氧基之化合物為佳。而且,本發明之異物除去用塗膜形成組成物係含有作為任意成分之吸光性化合物、界面活性劑等者。
本發明之異物除去用塗膜形成組成物中之固體成分之比率,只要是各成分均勻溶解時,即無特別限定,例如0.5~50質量%,又,例如1~30質量%。在此,固體成分係指自異物除去用塗膜形成組成物之全成分除去溶劑成分者。
本發明中,異物係指附著於基板上之目的物以外的物質。在半導體裝置製造步驟中不要的物質。可列舉例如附著於晶圓上的顆粒、金屬雜質、蝕刻後殘渣、接著劑剝離殘渣等。
本發明之異物除去用塗膜,特別適合使用於藉由接著劑接著晶圓彼此後,在剝離接著劑的步驟中,接著劑塗佈前,形成本發明之塗膜,然後,進行了晶圓之接著、剝離步驟後之異物(接著劑殘渣)剝離。
本發明之異物除去用塗膜在顯影液中溶解係指在後述顯影液中進行浸漬、洗凈等時,塗膜溶解於顯影液中,變成不存在於基板上。本發明所謂的溶解係指以實施例記載的方法,形成於基板上之該膜,自當初形成的膜厚被除去至少90%以上(亦即,殘膜之膜厚為當初膜厚之10%以下)、或被除去至少95%以上除去(亦即,殘膜之膜厚為當初膜厚之5%以下)、或被除去至少99%以上(亦即,殘膜之膜厚為當初膜厚之1%以下),最佳為被除去100%(亦即,殘膜之膜厚為當初膜厚之0%(無殘膜))。
具體地說明本發明之異物除去用塗膜形成組成物。
<聚醯胺酸> 本發明之異物除去用塗膜形成組成物為包含具有式(1)表示之結構的聚醯胺酸、或具有式(1)表示之結構與式(2)表示之結構的聚醯胺酸者。 式(1)中,A1
表示4價之有機基,B1
表示3價之有機基。A1
可列舉例如式(3)~(10)(式中X表示碳數1~5之烷基、氯原子、溴原子、氟原子、碳數1~5之烷氧基、羥基、羧基、苯氧基、三氟甲基或硝基,m表示0、1或2之數)。
B1
可列舉例如式(11)~(18)(式中Y表示碳數1~5之烷基、氯原子、溴原子、氟原子、碳數1~5之烷氧基、羥基、羧基、苯氧基、三氟甲基或硝基,m表示0、1或2之數)。
式(2)中,A2
表示4價之有機基,B2
表示2價有機基。A2
可列舉例如式(3)~(10)。 B2
可列舉例如式(19)~(27)(式中Z表示碳數1~5之烷基、氯原子、溴原子、氟原子、碳數1~5之烷氧基、羥基、羧基、苯氧基、三氟甲基或硝基,m表示0、1或2之數)。
本發明使用之聚醯胺酸之重量平均分子量係以聚苯乙烯換算,例如1000~100000,或1000~50000,較佳為2000~50000。重量平均分子量為1000以下時,形成之異物除去用塗膜對接著劑層所使用之溶劑的溶解度變高,結果產生與接著劑層互混(層之混合)的情形。重量平均分子量為100000以上時,形成之異物除去用塗膜對顯影液之溶解性變得不足,顯影後產生殘渣存在的情形。
得到本發明之異物除去用塗膜形成組成物所包含之聚醯胺酸的方法無特別限定,可既有的方法製造。例如藉由使二胺化合物與四羧酸或其衍生物的四羧酸二酐化合物或二羧酸二鹵化物等反應、聚合,製造聚醯胺酸。又,藉由使用雙矽烷基化二胺化合物與四羧酸二酐化合物之聚合,合成聚醯胺酸矽烷基酯後,藉由酸分解矽烷基酯部分,可製造聚醯胺酸。
本發明之異物除去用塗膜形成組成物所含有之聚醯胺酸,可由(a)四羧酸二酐化合物與(b)具有至少1個羧基之二胺化合物製造,又,可由(a)四羧酸二酐化合物、(b)具有至少1個羧基之二胺化合物及(c)二胺化合物製造。
本發明使用之聚醯胺酸之製造使用的(a)四羧酸二酐化合物,無特別限定,又,此等可使用一種,也可同時使用二種以上。具體例,可列舉均苯四甲酸二酐、3,3’-、4,4’-聯苯四羧酸二酐、3,3’-、4,4’-二苯甲酮四羧酸二酐、3,3’-、4,4’-二苯醚四羧酸二酐、3,3’-、4,4’-二苯基碸四羧酸二酐等之芳香族四羧酸、如1,2,3,4-環丁烷四羧酸二酐、1,2-二甲基-1,2,3,4-環丁烷四羧酸二酐、1,2,3,4-四甲基-1,2,3,4-環丁烷四羧酸二酐、1,2,3,4-環戊烷四羧酸二酐、1,2,3,4-環己烷四羧酸二酐、3,4-二羧基-1,2,3,4-四氫-1-萘琥珀酸二酐之脂環式四羧酸二酐、如1,2,3,4-丁烷四羧酸二酐之脂肪族四羧酸二酐。
本發明使用之聚醯胺酸之製造所使用的(b)具有至少1個羧基之二胺化合物,無特別限定,又,此等可使用一種,也可同時使用二種以上。具體例,可列舉2,4-二胺基苯甲酸、2,5-二胺基苯甲酸、3,5-二胺基苯甲酸、4,6-二胺基-1,3-苯二羧酸、2,5-二胺基-1,4-苯二羧酸、雙(4-胺基-3-羧基苯基)醚、雙(4-胺基-3,5-二羧基苯基)醚、雙(4-胺基-3-羧基苯基)碸、雙(4-胺基-3,5-二羧基苯基)碸、4,4’-二胺基-3,3’-二羧基聯苯、4,4’-二胺基-3,3’-二羧基-5,5’-二甲基聯苯、4,4’-二胺基-3,3’-二羧基-5,5’-二甲氧基聯苯、1,4-雙(4-胺基-3-羧基苯氧基)苯、1,3-雙(4-胺基-3-羧基苯氧基)苯、雙[4-(4-胺基-3-羧基苯氧基)苯基]碸、雙[4-(4-胺基-3-羧基苯氧基)苯基]丙烷、2,2-雙[4-(4-胺基-3-羧基苯氧基)苯基]六氟丙烷等。
又,本發明使用之聚醯胺酸之製造所使用的(c)二胺化合物,無特別限定,但是與(b)具有至少1個羧基之二胺化合物不同的二胺化合物。(c)二胺化合物係以不具有羧基者為佳。又,此等可使用一種,也可同時使用二種以上。具體例,可列舉2,4-二胺基苯酚、3,5-二胺基苯酚、2,5-二胺基苯酚、4,6-二胺基間苯二酚、2,5-二胺基氫醌、雙(3-胺基-4-羥基苯基)醚、雙(4-胺基-3-羥基苯基)醚、雙(4-胺基-3,5-二羥基苯基)醚、雙(3-胺基-4-羥基苯基)甲烷、雙(4-胺基-3-羥基苯基)甲烷、雙(4-胺基-3,5-二羥基苯基)甲烷、雙(3-胺基-4-羥基苯基)碸、雙(4-胺基-3-羥基苯基)碸、雙(4-胺基-3,5-二羥基苯基)碸、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、2,2-雙(4-胺基-3-羥基苯基)六氟丙烷、2,2-雙(4-胺基-3,5-二羥基苯基)六氟丙烷、4,4’-二胺基-3,3’-二羥基聯苯、4,4’-二胺基-3,3’-二羥基-5,5’-二甲基聯苯、4,4’-二胺基-3,3’-二羥基-5,5’-二甲氧基聯苯、1,4-雙(3-胺基-4-羥基苯氧基)苯、1,3-雙(3-胺基-4-羥基苯氧基)苯、1,4-雙(4-胺基-3-羥基苯氧基)苯、1,3-雙(4-胺基-3-羥基苯氧基)苯、雙[4-(3-胺基-4-羥基苯氧基)苯基]碸、雙[4-(3-胺基-4-羥基苯氧基)苯基]丙烷、2,2-雙[4-(3-胺基-4-羥基苯氧基)苯基]六氟丙烷等之具有酚性羥基之二胺化合物、1,3-二胺基-4-巰基苯、1,3-二胺基-5-巰基苯、1,4-二胺基-2-巰基苯、雙(4-胺基-3-巰基苯基)醚、2,2-雙(3-胺基-4-巰基苯基)六氟丙烷等之具有苯硫酚基之二胺化合物、1,3-二胺基苯-4-磺酸、1,3-二胺基苯-5-磺酸、1,4-二胺基苯-2-磺酸、雙(4-胺基苯-3-磺酸)醚、4,4’-二胺基聯苯基-3,3’-二磺酸(disulfonic Acid)、4,4’-二胺基-3,3’-二甲基聯苯基-6,6’-二磺酸等之具有磺酸基之二胺化合物。又,可列舉p-苯二胺、m-苯二胺、4,4’-伸甲基-雙(2,6-乙基苯胺基)、4,4’-伸甲基-雙(2-異丙基-6-甲基苯胺基)、4,4’-伸甲基-雙(2,6-二異丙基苯胺基)、2,4,6-三甲基-1,3-苯二胺、2,3,5,6-四甲基-1,4-苯二胺、o-聯甲苯胺、m-聯甲苯胺、3,3’-、5,5’-四甲基聯苯胺、雙[4-(3-胺基苯氧基)苯基]碸、2,2-雙[4-(3-胺基苯氧基)苯基]丙烷、2,2-雙[4-(3-胺基苯氧基)苯基]六氟丙烷、4,4’-二胺基-3,3’-二甲基二環己基甲烷、4,4’-二胺基二苯醚、3,4-二胺基二苯醚、4,4’-二胺基二苯基甲烷、2,2-雙(4-苯胺基)六氟丙烷、2,2-雙(3-苯胺基)六氟丙烷、2,2-雙(3-胺基-4-甲醯基)六氟丙烷、1,4-雙(4-胺基苯氧基)苯、1,3-雙(4-胺基苯氧基)苯、雙[4-(4-胺基苯氧基)苯基]碸、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷等之二胺化合物。
本發明使用之聚醯胺酸之製造,使用(b)具有至少1個羧基之二胺化合物及(c)二胺化合物時,全二胺化合物中所佔之(b)具有至少1個羧基之二胺化合物之比率,例如為1~99質量%,又,例如為5~80質量%,或10~60質量%。(b)具有至少1個羧基之二胺化合物之比率,少於此時,形成之異物除去用塗膜成為對顯影液之溶解性不足者。
本發明使用之聚醯胺酸為由(a)四羧酸二酐化合物與(b)至少1個之羧基,或由(a)四羧酸二酐化合物、(b)具有至少1個羧基之二胺化合物、及(c)二胺化合物製造時,二胺化合物之總莫耳數與四羧酸二酐化合物之總莫耳數之比係以0.8~1.2為佳。與通常之聚縮合反應相同,此莫耳比越接近1時,生成之聚醯胺酸之聚合度變得越大,分子量更增加。
聚醯胺酸之製造中,二胺化合物與四羧酸二酐化合物之反應的反應溫度可選擇-20℃~+150℃,較佳為-5℃~+100℃之任意溫度。反應溫度為5℃~40℃,反應時間為1~48小時,可得到高分子量的聚醯胺酸。為了得到低分子量,且保存安定性高的聚醯胺酸時,更佳為40℃~80℃、反應時間為10小時以上。
二胺化合物與四羧酸二酐化合物之反應可在溶劑中進行。此時,可使用的溶劑,可列舉N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基吡咯烷酮、N-乙烯基吡咯烷酮、N-甲基己內醯胺、二甲基亞碸、四甲基脲、吡啶、二甲基碸、六甲基亞碸、m-甲酚、γ-丁內酯、乙酸乙酯、乙酸丁酯、乳酸乙酯、3-甲氧基丙酸甲酯、2-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、2-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、2-乙氧基丙酸乙酯、乙二醇二甲醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇甲基乙醚、丙二醇二甲醚、二丙二醇二甲醚、乙二醇單甲醚、乙二醇單乙醚、二乙二醇單甲醚、二乙二醇單乙醚、丙二醇單甲醚、丙二醇單乙醚、二丙二醇單甲醚、二丙二醇單乙醚、丙二醇單甲醚乙酸酯、卡必醇乙酸酯、乙基溶纖劑乙酸酯、環己酮、甲基乙基酮、甲基異丁基酮、2-庚酮等。此等可單獨使用,也可混合使用。此外,也可為不溶解聚醯胺酸的溶劑,在藉由聚合反應生成之聚醯胺酸不會析出的範圍內,可與上述溶劑混合使用。
包含如此所得之聚醯胺酸的溶液,可直接用於異物除去用塗膜形成組成物之調製。又,也可使聚醯胺酸在甲醇、乙醇等之弱溶劑中沉澱單離,回收使用。
本發明之異物除去用塗膜形成組成物所含有之聚醯胺酸,可列舉例如下述聚醯胺酸(29)~(41)(式中p1
、p2
、p3
及p4
表示聚醯胺酸中之各結構之比率)。在此,(29)~(36)係由一種四羧酸二酐化合物與二種的二胺化合物所製造的聚醯胺酸,(37)及(38)係由二種的四羧酸二酐化合物與一種二胺化合物所製造之聚醯胺酸,(39)係由二種的四羧酸二酐化合物與二種的二胺化合物所製造之聚醯胺酸,此外,(40)及(41)係由一種四羧酸二酐化合物與一種二胺化合物所製造之聚醯胺酸。
<具有至少2個環氧基的化合物> 本發明之異物除去用塗膜形成組成物,可含有具有至少2個環氧基的化合物。這種化合物只要是具有環氧基之化合物時,無特別限定。可列舉例如三(2,3-環氧基丙基)異氰脲酸酯、1,4-丁二醇二環氧丙醚、1,2-環氧-4-(環氧基乙基)環己烷、丙三醇三環氧丙醚、二乙二醇二環氧丙醚、2,6-二環氧丙基苯基環氧丙醚、1,1,3-三[p-(2,3-環氧基丙氧基)苯基]丙烷、1,2-環己烷二羧酸二環氧丙酯、4,4’-亞甲基雙(Methylenebis)(N,N-二環氧丙基苯胺)、3,4-環氧基環己基甲基-3,4-環氧基環己烷羧酸酯、三羥甲基乙烷三環氧丙醚及雙酚-A-二環氧丙醚、季戊四醇聚環氧丙醚等。
又,具有至少2個環氧基的化合物,可使用具有環氧基之聚合物。這種聚合物只要是具有環氧基之聚合物時,無特別限制可使用。
這種聚合物可藉由使用具有環氧基之加成聚合性單體之加成聚合製造,又,也可藉由具有羥基之高分子化合物與環氧氯丙烷、環氧丙基對甲苯磺酸酯等之具有環氧基之化合物之反應來製造。例如,可列舉聚環氧丙基丙烯酸酯、環氧丙基甲基丙烯酸酯與乙基甲基丙烯酸酯之共聚物、環氧丙基甲基丙烯酸酯與苯乙烯與2-羥基乙基甲基丙烯酸酯之共聚物等之加成聚合聚合物或環氧基酚醛清漆等之縮聚合聚合物。這種聚合物之重量平均分子量,例如300~200000。
具有至少2個環氧基的化合物,其中具有胺基之環氧樹脂,可列舉YH-434、YH434L(東都化成(股)製、商品名),具有環氧環己烷(Cyclohexene oxide)結構之環氧樹脂,可列舉EPOLEAD GT-401、同GT-403、同GT-301、同GT-302、CELLOXID2021、CELLOXID3000 (DAICEL化學(股)製、商品名),雙酚A型環氧樹脂,可列舉Epikote1001、同1002、同1003、同1004、同1007、同1009、同1010、同828(以上為油化Shell Epoxy(股)製、商品名)等,雙酚F型環氧樹脂可列舉Epikote807(油化Shell Epoxy(股)製、商品名)等,苯酚酚醛清漆型環氧樹脂,可列舉Epikote152、同154(以上為油化Shell Epoxy(股)製、商品名)、EPPN201、同202(以上為日本化藥(股)製、商品名)等,甲酚醛清漆型環氧樹脂,可列舉EOCN-102、EOCN-103S、EOCN-104S、EOCN-1020、EOCN-1025、EOCN-1027(以上為日本化藥(股)製、商品名)、Epikote 180S75(油化Shell Epoxy(股)製、商品名)等,脂環式環氧樹脂可列舉Denacol EX-252(nagase chemtex(股)製、商品名)、CY175、CY177、CY179(以上、CIBA-GEIGY A.G製、商品名)、araldite CY-182、同CY-192、同CY-184(以上、CIBA-GEIGY A.G製、商品名)、EPICLON 200、同400(以上為大日本油墨工業(股)製、商品名)、Epikote 871、同872(以上為油化Shell Epoxy(股)製、商品名)、ED-5661、ED-5662(以上為Celanese coating(股)製、商品名)等,脂肪族聚環氧丙醚可列舉Denacol EX-611、同EX-612、同EX-614、同EX-622、同EX-411、同EX-512、同EX-522、同EX-421、同EX-313、同EX-314、同EX-321(nagasechemtex(股)製、商品名)等。
上述具有至少2個環氧基的化合物之含量係相對於聚醯胺酸100質量份,例如為5~70質量份,或10~60質量份,較佳為15~45質量份。具有至少2個環氧基的化合物之含量未達5質量份時,異物除去用塗膜之硬化度不足,例如溶解於接著劑層中,有引起互混的情形。超過70質量份時,變得無法得到對顯影液之充分的溶解性。
<溶劑> 本發明之異物除去用塗膜形成組成物係藉由均勻地混合上述各成分,可容易調製,可在溶解於適當溶劑的溶液狀態使用。這種溶劑可使用例如乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、丙二醇、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇丙醚乙酸酯、甲苯、二甲苯、甲基乙基酮、環戊酮、環己酮、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、乙氧基乙酸乙脂、羥基乙酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸甲酯、丙酮酸甲酯、丙酮酸乙酯、乙酸乙酯、乙酸丁酯、乳酸乙酯、乳酸丁酯、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基吡咯烷酮等。此等溶劑可單獨使用或2種以上之組合使用。此外,可混合使用丙二醇單丁醚、丙二醇單丁醚乙酸酯等之高沸點溶劑。
如此調製之異物除去用塗膜樹脂組成物溶液係使用孔徑為0.2μm左右之過濾器等過濾後,供使用為佳。如此調製之異物除去用塗膜樹脂組成物溶液,在室溫下,長期間之儲存安定性也優異。
本發明之異物除去用塗膜形成組成物中,除前述聚醯胺酸、具有至少2個環氧基的化合物及溶劑外,可含有吸光性化合物、界面活性劑等作為任意的成分。
作為吸光性化合物,只要是對使用之曝光波長具有吸收的化合物時,無特別限定者。較佳為使用蒽環、萘環、苯環、喹啉環、三嗪環等之具有芳香環結構之化合物。又,就不阻礙異物除去用塗膜對顯影液之溶解性的觀點,較佳為使用具有酚性羥基、羧基或磺酸基之化合物。
對波長248nm之光,具有較大吸收的吸光性化合物,可列舉例如1-萘羧酸、2-萘羧酸、1-萘酚、2-萘酚、1-胺基萘、1-羥基-2-萘羧酸、3-羥基-2-萘羧酸、3,7-二羥基-2-萘羧酸、6-溴-2-羥基萘、1,2-萘二羧酸(Naphthalene dicarboxylic acid)、1,3-萘二羧酸、1,4-萘二羧酸、1,5-萘二羧酸、1,6-萘二羧酸、1,7-萘二羧酸、1,8-萘二羧酸、2,3-萘二羧酸、2,6-萘二羧酸、1,2-二羥基萘、1,3-二羥基萘、1,4-二羥基萘、1,5-二羥基萘、1,6-二羥基萘、1,7-二羥基萘、1,8-二羥基萘、2,3-二羥基萘、2,6-二羥基萘、2,7-二羥基萘、6-羥基-1-萘羧酸、1-羥基-2-萘羧酸、3-羥基-2-萘羧酸、6-羥基-2-萘羧酸、1-溴-2-羥基-3-萘羧酸、1-溴-4-羥基-3-萘羧酸、1,6-二溴-2-羥基-3-萘羧酸、3-羥基-7-甲氧基-2-萘羧酸、1-胺基-2-萘酚、1,5-二巰基萘、1,4,5,8-萘四羧酸、3,5-二羥基-2-萘羧酸、1,4-二羥基-2-萘羧酸、2-乙氧基-1-萘羧酸、2,6-二氯-1-萘酚、2-羥基-3-萘羧酸甲基酯、6-羥基-2-萘羧酸甲基酯、3-羥基-7-甲氧基-2-萘羧酸甲基酯、3,7-二羥基-2-萘羧酸甲基酯、2,4-二溴-1-萘酚、1-溴-2-萘酚、2-萘硫醇、4-甲氧基-1-萘酚、6-乙醯氧基-2-萘羧酸、1,6-二溴-1-萘酚、2,6-二溴-1,5-二羥基萘、1-乙醯基-2-萘酚、9-蒽羧酸、1,4,9,10-四羥基蒽(Tetrahydroxyanthracene)、1,8,9-三羥基蒽等。
又,對波長193nm之光,具有較大吸收的吸光性化合物,可列舉例如苯甲酸、4-甲基苯甲酸、o-鄰苯二甲酸、m-鄰苯二甲酸、p-鄰苯二甲酸、2-甲氧基苯甲酸、間苯二甲酸、對苯二甲酸、2-羥基苯甲酸、3-羥基苯甲酸、4-羥基苯甲酸、2-乙醯氧基苯甲酸、2-胺基苯甲酸、3-胺基苯甲酸、4-胺基苯甲酸、對稱苯三甲酸、1,4-苯二羧酸、2,3-二甲氧基苯甲酸、2,4-二甲氧基苯甲酸、2,5-二甲氧基苯甲酸、2,4-二羥基苯甲酸、2,6-二羥基苯甲酸、3,4-二羥基苯甲酸、3,5-二羥基苯甲酸、4-乙醯基苯甲酸、均苯四甲酸、對稱苯三甲酸酐、2-[雙-(4-羥基苯基)-甲基]苯甲酸、3,4,5-三羥基苯甲酸、2-二苯甲酮羧酸、m-苯基苯甲酸、3-(4’-羥基苯氧基)苯甲酸、3-苯氧基苯甲酸、苯酚、1,4-二羥基苯、1,3-二羥基苯、1,2-二羥基苯、2-甲基苯酚、3-甲基苯酚、4-甲基苯酚、1,3,5-三羥基苯、2,2-雙-4-羥基苯基丙烷、2-羥基聯苯、2-胺基苯酚、3-胺基苯酚、4-胺基苯酚、及4-苄氧基苯酚(Benzyloxy phenol)等。
又,此等之吸收性化合物,為了抑制異物除去用塗膜形成用之燒成時之昇華,可與聚合物或具有1個以上之反應性基之化合物反應使用。
例如具有羧基或酚性羥基之吸光性化合物時,可使用與三(2,3-環氧基丙基)異氰脲酸酯、1,4-丁二醇二環氧丙醚、1,2-環氧-4-(環氧基乙基)環己烷、丙三醇三環氧丙醚、二乙二醇二環氧丙醚、2,6-二環氧丙基苯基環氧丙醚、1,1,3-三(p-(2,3-環氧基丙氧基)苯基)丙烷、1,2-環己烷二羧酸二環氧丙基酯、4,4’-亞甲基雙(N,N-二環氧丙基苯胺基)、3,4-環氧基環己基甲基-3,4-環氧基環己烷羧酸酯、三羥甲基乙烷三環氧丙醚、雙酚-A-二環氧丙醚、及季戊四醇聚環氧丙醚等之多官能環氧化合物或環氧丙基甲基丙烯酸酯等包含具有環氧基之結構的聚合物反應得到的化合物。可列舉例如具有下述(42)、(43)及(44)表示之單位結構的聚合物或(45)表示之化合物等。式(45)中,Ar表示可經碳數1~5之烷基、碳數1~5之烷氧基、氟原子、氯原子、溴原子、碘原子、硝基、氰基、羥基、巰基、碳數1~5之硫烷基、羧基、苯氧基、乙醯基、碳數1~5之烷氧基羰基或乙烯基取代之苯環、萘環或蒽環。
上述吸收性化合物可單獨使用或2種以上之組合使用。使用吸光性化合物時,其含量係相對於聚醯胺酸100質量份,例如為1~300質量份或1~200質量份,又,例如為1~100質量份,或5~100質量份。吸收性化合物超過300質量份時,異物除去用塗膜對顯影液之溶解性會降低,有時會引起異物除去用塗膜與接著劑層互混的情形。
本發明之異物除去用塗膜形成組成物可包含酸產生劑。酸產生劑可列舉2,4,4,6-四溴環己二烯酮、苯偶因對甲苯磺酸酯、2-硝基苄基對甲苯磺酸酯、其他有機磺酸烷酯等之熱酸產生劑、雙(4-tert-丁基苯基)錪三氟甲磺酸鹽、三苯基鋶三氟甲磺酸鹽、苯基-雙(三氯甲基)-s-三嗪、苯偶因對甲苯磺酸酯、及N-羥基丁二醯亞胺三氟甲磺酸鹽等之光酸產生劑。酸產生劑之添加量係在異物除去用塗膜形成組成物之固體成分中,必要時可使用10質量%以下,較佳為3質量%以下的量。
本發明之異物除去用塗膜形成組成物中,為了促進對顯影液之溶解速度之目的,可添加多元酚化合物或含有羧基的化合物。這種化合物無特別限定,可列舉例如三-羥基苯基乙烷、雙酚-A、雙酚-S、4,4’-異亞丙基-二-o-甲酚、5-tert-丁基鄰苯三酚、六氟雙酚-A、3,3,3’,3’-四甲基-1、1’-螺雙茚满(spirobisindane)-5,5’,6,6’-呋喃(tetrole)、4,4’-(9-亞茀基)二酚、雙酚-AP、雙酚-P、5-α,α-二甲基-4-羥基苄基水楊酸、α,α,α’-三(4-羥基苯基)-1-乙基-4-異丙基苯、5,5’-二-tert-丁基-2,2’,4,4’-四羥基二苯甲酮等之多元酚類、均苯四甲酸、鄰苯二甲酸、偏苯三甲酸(Trimellitic acid)、4-磺酸基鄰苯二甲酸(4-sulfophthalic acid)、苯六甲酸(benzene hexacarboxylic acid)、2,3-萘二羧酸、4-羥基鄰苯二甲酸、3,4-二羥基鄰苯二甲酸、4,5-二羥基鄰苯二甲酸、3,3’-,4,4’-聯苯基四羧酸、3,3’-、4,4’-二苯甲酮四羧酸、3,3’-、4,4’-二苯醚四羧酸、3,3’-、4,4’-二苯基碸四羧酸、1,2,3,4-環丁烷四羧酸、1,2-二甲基-1,2,3,4-環丁烷四羧酸、1,2,3,4-四甲基-1,2,3,4-環丁烷四羧酸、1,2,3,4-環戊烷四羧酸、1,2,3,4-環己烷四羧酸、3,4-二羧基-1,2,3,4-四氫-1-萘琥珀酸等之多元羧酸、聚丙烯酸、聚甲基丙烯酸、聚醯胺酸、聚馬來酸酐等之含有羧酸或羧酸酐的聚合物、苯酚酚醛清漆、聚羥基苯乙烯、萘酚酚醛清漆等之含有酚性羥基的聚合物等。上述化合物之添加量係在異物除去用塗膜形成組成物之固體成分中,必要時使用20質量%以下,較佳為10質量%以下的量。
本發明之異物除去用塗膜形成組成物中,為了調整對顯影液之溶解速度之目的,可添加具有被tert-丁基、四氫吡喃基、1-乙氧基乙基及三甲基矽烷基等在酸之存在下容易被分解之基保護之羧基或酚性羥基的化合物。
這種化合物,可列舉例如二-tert-丙二酸丁酯(malonate)、tert-乙酸丁酯、tert-丙酸丁酯、tert-乙醯乙酸丁酯、tert-乙酸戊酯、苯甲酸-tert-丁酯及tert-乙酸丁基三甲酯等之化合物。又,可列舉式(46)~(54)之化合物。
此等之化合物可提供在酸之存在下容易生成羧基或酚性羥基,對鹼性之顯影液之溶解性高的化合物。 因此,此等之化合物係與光酸產生劑一同被添加於異物除去用塗膜形成組成物為佳。亦即,由包含具有被上述酸之存在下容易被分解之基保護之羧基或酚性羥基的化合物與光酸產生劑之異物除去用塗膜形成組成物所形成的異物除去用塗膜,其經曝光的部分因曝光由光酸產生劑產生的酸,具有被酸之存在下容易被分解之基保護之羧基或酚性羥基的化合物之羧基或酚性羥基再生,結果經曝光之部分之異物除去用塗膜對鹼性溶液之溶解性變高。相對於此,未經曝光的部分,未變化成具有被酸之存在下容易被分解之基保護之羧基或酚性羥基的化合物,該部分之異物除去用塗膜對鹼性溶液之溶解性無法提高。因此,藉由一同使用具有被酸之存在下容易被分解之基保護之羧基或酚性羥基的化合物與光酸產生劑,曝光後之異物除去用塗膜之曝光部與非曝光部對鹼性顯影液之溶解性可產生差異,而容易藉由顯影形成圖型。
使用具有被上述酸之存在下容易被分解之基保護之羧基或酚性羥基的化合物時,其含量係相對於聚醯胺酸100質量份,例如為50~1質量份,或30~5質量份,又,例如為20~10質量份。光酸產生劑與具有被酸之存在下容易被分解之基保護之羧基或酚性羥基的化合物一同使用時,其含量係相對於具有被酸之存在下容易被分解之基保護之羧基或酚性羥基的化合物100質量份,例如為0.1~30質量份,或0.5~20質量份,又,例如為1~10質量份。
本發明之異物除去用塗膜形成組成物可包含界面活性劑。界面活性劑,可列舉例如聚氧乙烯月桂醚、聚氧乙烯十八烷基醚、聚氧乙烯十六烷基醚、聚氧乙烯油醚等之聚氧化乙烯烷醚類、聚氧乙烯辛基苯酚醚、聚氧乙烯壬基苯酚醚等之聚氧乙烯烷基烯丙醚類、聚氧乙烯/聚氧丙烯嵌段共聚物類、山梨糖醇酐單月桂酸酯、山梨糖醇酐單棕櫚酸酯、山梨糖醇酐單硬脂酸酯、山梨糖醇酐單油酸酯、山梨糖醇酐三油酸酯、山梨糖醇酐三硬脂酸酯等之山梨糖醇酐脂肪酸酯類、聚氧乙烯山梨糖醇酐單月桂酸酯、聚氧乙烯山梨糖醇酐單棕櫚酸酯、聚氧乙烯山梨糖醇酐單硬脂酸酯、聚氧乙烯山梨糖醇酐三油酸酯、聚氧乙烯山梨糖醇酐三硬脂酸酯等之聚氧乙烯山梨糖醇酐脂肪酸酯類等之非離子系界面活性劑、EFTOP EF301、EF303、EF352((股)TOHKEM PRODUCTS製、商品名)、Megafac F171、F173(大日本油墨化學工業(股)製、商品名)、Fluorad FC430、FC431(住友3M(股)製、商品名)、Asahiguard AG710、Surflon S-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(股)製、商品名)等之氟系界面活性劑、有機矽氧烷聚合物KP341(信越化學工業(股)製、商品名)等。此等之界面活性劑之調配量係在本發明之異物除去用塗膜形成組成物之全成分中,通常為0.2質量%以下,較佳為0.1質量%以下。此等之界面活性劑可單獨添加,也可以2種以上之組合添加。
本發明之異物除去用塗膜形成組成物,必要時也可含有流變調整劑、接著補助劑等。
以下說明本發明之異物除去用塗膜形成組成物之使用。 在半導體基板(例如、矽/二氧化矽被覆基板、氮化矽(silicon nitride)基板、玻璃基板、ITO基板等)上,藉由旋轉塗佈機、塗佈機、浸漬等之適當的塗佈方法塗佈本發明之異物除去用塗膜形成組成物後,藉由燒成形成異物除去用塗膜。燒成的條件,可自燒成溫度80℃~300℃、燒成時間0.3~60分鐘之中適宜選擇。
本發明之異物除去用塗膜之膜厚,通常為1μm~5nm,較佳為500~10nm,最佳為300~15nm。
形成之異物除去用塗膜對光阻用顯影液之溶解速度係每秒0.1nm~50nm,較佳為每秒0.2nm~40nm,更佳為0.3~20nm。溶解速度小於此時,異物除去用塗膜之除去必要的時間變長,導致生產性降低。
由本發明之異物除去用塗膜形成組成物所形成的異物除去用塗膜係藉由改變形成時的燒成條件,可控制異物除去用塗膜對顯影液之溶解速度者。固定之燒成時間時,燒成溫度越高,可形成對顯影液之溶解速度越小的異物除去用塗膜。
本案之異物除去用塗膜,在該膜形成後可進行曝光。曝光可對晶圓全面曝光,也可通過具有特定圖型之遮罩。曝光時,可使用KrF準分子雷射(波長248nm)、ArF準分子雷射(波長193nm)及F2準分子雷射(波長157nm)等。曝光後,必要時,也可進行曝光後加熱(PEB:Post Exposure Bake)。
接著,藉由顯影液除去異物除去用塗膜。顯影液可列舉氫氧化鉀、氫氧化鈉等之鹼金屬氫氧化物之水溶液、氫氧化四甲銨、氫氧化四乙銨、膽鹼等之氫氧化四級銨之水溶液、乙醇胺、丙基胺、乙二胺等之胺水溶液等的鹼性水溶液。此外,可在此等之顯影液中添加界面活性劑等。異物除去用塗膜除去的條件,可自溫度5℃~50℃、時間2~500秒、或3~400秒中適宜選擇。
由本發明之異物除去用塗膜形成組成物所形成之異物除去用塗膜,使用泛用之2.38質量%之氫氧化四甲銨水溶液,可在室溫(例如25℃)下容易進行剝離。
本發明之異物除去用塗膜係因膜之燒成溫度,改變對顯影液之溶解速度,故可將膜之除去條件調整為最佳。例如使用對顯影液耐性不足的基板時,藉由降低膜之燒成溫度,可在短時間內除去膜,故將基板之損傷降至最低限度。例如,如實施例1~4記載,以190℃燒成時,在5秒以內可除去膜。
<異物除去方法> 本案之異物除去方法係包含將上述組成物塗佈於基板上,經燒成形成塗膜的步驟、於該膜上形成異物的步驟,及使顯影液對該膜產生作用,除去該膜之步驟的異物除去方法。
也可再含有在前述形成塗膜的步驟後,形成接著層,接著,剝離接著層的步驟。前述異物也可為接著層形成後的剝離殘渣。
上述基板,可列舉玻璃、含有金屬之化合物或含有半金屬之化合物。含有金屬之化合物或含有半金屬之化合物,可列舉例如基本成分為金屬氧化物,且藉由高溫下之熱處理,燒結(sintering)之燒結體的陶瓷、如矽之半導體、金屬氧化物或半金屬氧化物(矽氧化物、氧化鋁等)、金屬碳化物或半金屬碳化物、金屬氮化物或半金屬氮化物(矽氮化物等)、金屬硼化物或半金屬硼化物等之無機化合物之成形體等無機固體材料、鋁、鎳鈦、不銹鋼(SUS304、SUS316、SUS316L等),較佳為矽基板(例如半導體裝置製造所使用的半導體用矽晶圓)。
<基板處理方法> 基板處理方法其係包含以下步驟: 將上述組成物塗佈於基板上,經燒成形成塗膜的步驟、在該膜上形成接著層的步驟、使另一基板暫時黏貼於該基板的步驟、剝離另一基板的步驟,及使用顯影液剝離該膜的步驟。 本案之基板處理方法,被使用於例如所謂的晶圓暫時黏貼步驟。
<接著劑層> 接著劑層係藉由公知的接著劑與方法而形成。接著劑可使用例如國際公開第2015/190438號等所記載之塗佈型的晶圓暫時接著劑、ThinMaterials公司之暫時貼合材料(日產化學工業(股))、東麗股份公司製之半導體用晶圓暫時黏貼材料、WaferBOND(註冊商標)CR-200、HT-10.10 (Brewer science公司製),也可使用膠帶狀接著劑(例如,背面研磨用膠帶(例如,3MTM
暫時固定用黏著膠帶ATT-4025(3M Japan股份公司製)、E系列、P系列、S系列(Lintec股份公司製、商品名)、ICROS Tape(註冊商標)(三井化學Tohcello股份公司製))、切割用膠帶(例如,耐溶劑切割膠帶(日東電工股份公司製、商品名)、感溫性黏著薄片Intelimer(註冊商標)膠帶(Nitta股份公司製)、Intelimer(註冊商標)膠帶(Anchor-Techno股份公司製)等)。 也可為使用於特定之晶圓使用系統(例如,Zero Newton(註冊商標)(東京應化工業(股))中的晶圓用接著劑。
例如,背面研磨膠帶係由基材薄膜、黏著劑層、及剝離薄膜所構成。基材薄膜自以前使用如乙烯-乙酸乙烯酯共聚物(EVA)之軟質的熱塑性薄膜,但是有報告為了提高晶圓之支撐性之目的,也可嘗試使用如聚對苯二甲酸乙二酯(PET)之剛直的延伸薄膜。然後,再進行改良,彈性模數不同之二種類薄膜之積層設計,例如PET與乙烯系共聚物之積層設計或聚丙烯(PP)與乙烯系共聚物之積層設計。
黏著劑一般為丙烯酸系。丙烯酸系黏著劑係使以如丙烯酸丁酯之玻璃轉移溫度較低的單體為主原料之丙烯酸共聚物(acrylic copolymer)與硬化劑反應,產生交聯的設計已為人知。背面研磨膠帶係黏貼於晶圓電路面來使用,故有來自膠帶剝離後之黏著劑之污染的疑慮。因此,也有報告假設即使黏著劑殘留,以水洗凈而除去,使用乳液(Emulsion)系之黏著劑的設計,但是完全除去困難。因此,在電路面形成本案之異物除去用塗膜後,藉由形成接著層,可藉由顯影液之洗凈完全除去其後之剝離步驟時的異物(接著劑殘渣),也不會對電路等之配線部產生損傷。
<積層基板之製造方法> 經過包含將上述組成物塗佈於基板上,經燒成形成塗膜的步驟、該膜上形成接著層的步驟、將另一基板黏貼於該基板之步驟的步驟,可製造具有基板―該膜―接著層―基板之構成的積層基板。較佳為保持一者為半導體基板,另一者為半導體基板之形狀用的支撐基板,接著層例如可再度剝離半導體基板與支撐基板者為佳。接著層係如上述記載。
以下藉由實施例更具體說明本發明,但是本發明不受此限定。
[實施例]
實施例1 (聚醯胺酸之合成) 藉由將均苯四甲酸二酐4.36g、二胺基苯甲酸1.19g、2,2-雙(3-胺基-4-甲醯基)六氟丙烷4.26g在丙二醇單甲醚55.6g中,於60℃下反應25小時,得到包含聚醯胺酸的溶液[A]。 (吸光性化合物之合成) 藉由將3、7-二羥基-2-萘甲酸19.0g、三(2,3-環氧基丙基)異氰脲酸酯10g、苄基三乙基氯化銨(Benzyl triethyl ammonium Chloride)0.552g在環己酮118g中,於130℃下反應24小時,得到包含吸光性化合物之溶液[a]。 (異物除去用塗膜形成組成物之調製) 在包含聚醯胺酸之溶液[A]14.0g中,添加包含吸光性化合物之溶液[a]4.38g、三(2,3-環氧基丙基)異氰脲酸酯0.630g、丙二醇單甲醚52.3g、丙二醇單甲醚乙酸酯67.5g,藉由於室溫下攪拌30分鐘,調製異物除去用塗膜形成組成物溶液[1]。
(異物除去用塗膜形成組成物之評價) 使用旋轉塗佈機將此異物除去用塗膜形成組成物之溶液[1]塗佈於矽晶圓基板上後,在加熱板上,以200℃進行60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。所得之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。使用橢圓測厚儀測量此異物除去用塗膜的結果,波長248nm下之折射率(n值)為1.67,衰減係數(damping coefficient)(k值)為0.39、波長193nm下之折射率(n值)為1.53、衰減係數(k值)為0.42。 又,將燒成溫度設為190℃、210℃及220℃,同樣地形成異物除去用塗膜。然後,確認此等之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。 其次,使用阻劑顯影分析儀(Litho Tech Japan(股)製)測量對顯影液(東京應化工業(股)製、商品名NMD-3)之異物除去用塗膜的溶解速度。分析儀周邊之溫度為25℃。燒成溫度190℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒10.7nm。又,燒成溫度200℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒2.0nm,燒成溫度210℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒0.9nm,燒成溫度220℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒0.61nm。換言之,燒成溫度190℃、燒成時間60秒所形成之異物除去用塗膜為3.7秒,燒成溫度200℃、燒成時間60秒所形成之異物除去用塗膜為20秒,燒成溫度210℃、燒成時間60秒所形成之異物除去用塗膜約44.4秒,燒成溫度220℃、燒成時間60秒所形成之異物除去用塗膜約65.6秒可完全除去,故存在於本異物除去用塗膜上的異物也可除去。 使用旋轉塗佈機將異物除去用塗膜形成組成物溶液[1]塗佈於矽晶圓基板上後,在加熱板上,以220℃、60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。在所得之異物除去用塗膜上,形成KrF用正型光阻膜,通過設定為形成200nm之線寬/間距(Line
&Space)
圖型的遮罩,以KrF準分子雷射(波長248nm)進行曝光。 110℃下曝光90秒鐘後進行加熱後,使用作為光阻用顯影液之2.38%氫氧化四甲銨水溶液(東京應化工業(股)製、商品名NMD-3)進行60秒鐘攪拌顯影。光阻與異物除去用塗膜及曝光部產生溶解,在200nm之線寬/間距也未看見殘膜。
實施例2 (異物除去用塗膜形成組成物之調製) 在實施例1使用之聚醯胺酸溶液[A]14.0g中,添加實施例1使用之包含吸光性化合物的溶液[a]4.38g、三(2,3-環氧基丙基)異氰脲酸酯0.630g、2、4,6-三(4-羥基苯基甲基)-1,3-苯二醇0.0450g、丙二醇單甲醚52.8g、丙二醇單甲醚乙酸酯67.5g,藉由在室溫下攪拌30分鐘,調製異物除去用塗膜形成組成物的溶液[2]。 (異物除去用塗膜形成組成物之評價) 使用旋轉塗佈機將此異物除去用塗膜形成組成物之溶液[2]塗佈於矽晶圓基板上後,在加熱板上,以200℃進行60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。所得之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。使用橢圓測厚儀測量此異物除去用塗膜的結果,波長248nm下之折射率(n值)為1.67,衰減係數(k值)為0.39、波長193nm下之折射率(n值)為1.53、衰減係數(k值)為0.42。 又,將燒成溫度設為190℃、210℃及220℃,同樣地形成異物除去用塗膜。然後,確認此等之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。
其次,使用阻劑顯影分析儀(Litho Tech Japan(股)製)測量對顯影液(東京應化工業(股)製、商品名NMD-3)之異物除去用塗膜的溶解速度。分析儀周邊之溫度為25℃。燒成溫度190℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒11.7nm。又,燒成溫度200℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒2.3nm,燒成溫度210℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒1.1nm,燒成溫度220℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒0.83nm。 換言之,燒成溫度190℃、燒成時間60秒所形成之異物除去用塗膜為約3.4秒,燒成溫度200℃、燒成時間60秒所形成之異物除去用塗膜為約17.4秒,燒成溫度210℃、燒成時間60秒所形成之異物除去用塗膜約36.4秒,燒成溫度220℃、燒成時間60秒所形成之異物除去用塗膜約48.2秒可完全除去,故存在於本異物除去用塗膜上的異物也可除去。 使用旋轉塗佈機將異物除去用塗膜形成組成物溶液[2]塗佈於矽晶圓基板上後,在加熱板上,以220℃、60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。在所得之異物除去用塗膜上,形成KrF用正型光阻膜,通過設定為形成200nm之線寬/間距圖型的遮罩,以KrF準分子雷射(波長248nm)進行曝光。110℃下曝光90秒鐘後進行加熱後,使用作為光阻用顯影液之2.38%氫氧化四甲銨水溶液(東京應化工業(股)製、商品名NMD-3)進行60秒鐘攪拌顯影。光阻與異物除去用塗膜及曝光部產生溶解,在200nm之線寬/間距也未看見殘膜。
實施例3 (聚醯胺酸之合成) 藉由將均苯四甲酸二酐4.36g、二胺基苯甲酸0.89g、2,2-雙(3-胺基-4-甲醯基)六氟丙烷4.97g於丙二醇單甲醚55.6g中,於60℃下反應25小時,得到包含聚醯胺酸的溶液[B]。 (異物除去用塗膜形成組成物之調製) 在包含聚醯胺酸之溶液[B]14.0g中,添加實施例1使用之包含吸光性化合物的溶液[a]4.38g、三(2,3-環氧基丙基)異氰脲酸酯0.630g、丙二醇單甲醚52.4g、丙二醇單甲醚乙酸酯67.5g,藉由在室溫下攪拌30分鐘,調製異物除去用塗膜形成組成物的溶液[3]。 (異物除去用塗膜形成組成物之評價) 使用旋轉塗佈機將此異物除去用塗膜形成組成物之溶液[3]塗佈於矽晶圓基板上後,在加熱板上,以200℃進行60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。所得之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。使用橢圓測厚儀測量此異物除去用塗膜的結果,波長248nm下之折射率(n值)為1.67,衰減係數(k值)為0.39、波長193nm下之折射率(n值)為1.53、衰減係數(k值)為0.42。 又,將燒成溫度設為190℃、210℃及220℃,同樣地形成異物除去用塗膜。然後,確認此等之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。
其次,使用阻劑顯影分析儀(Litho Tech Japan(股)製)測量對顯影液(東京應化工業(股)製、商品名NMD-3)之異物除去用塗膜的溶解速度。分析儀周邊之溫度為25℃。燒成溫度190℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒9.7nm。又,燒成溫度200℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒1.7nm,燒成溫度210℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒0.7nm,燒成溫度220℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒0.53nm。 換言之,燒成溫度190℃、燒成時間60秒所形成之異物除去用塗膜為約4.1秒,燒成溫度200℃、燒成時間60秒所形成之異物除去用塗膜為約23.5秒,燒成溫度210℃、燒成時間60秒所形成之異物除去用塗膜約57.1秒,燒成溫度220℃、燒成時間60秒所形成之異物除去用塗膜約75.5秒可完全除去,故存在於本異物除去用塗膜上的異物也可除去。 使用旋轉塗佈機將異物除去用塗膜形成組成物溶液[3]塗佈於矽晶圓基板上後,在加熱板上,以210℃、60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。在所得之異物除去用塗膜上,形成KrF用正型光阻膜,通過設定為形成200nm之線寬/間距圖型的遮罩,以KrF準分子雷射(波長248nm)進行曝光。 110℃下曝光90秒鐘後進行加熱後,使用作為光阻用顯影液之2.38%氫氧化四甲銨水溶液(東京應化工業(股)製、商品名NMD-3)進行60秒鐘攪拌顯影。光阻與異物除去用塗膜及曝光部產生溶解,在200nm之線寬/間距也未看見殘膜。
實施例4 (異物除去用塗膜形成組成物之調製) 在實施例1使用之聚醯胺酸溶液[A]14.0g中,添加在實施例1使用之包含吸光性化合物的溶液[a]4.38g、4,4’-伸甲基雙(二環氧丙基苯胺基)0.630g(東都化成製)、丙二醇單甲醚52.8g、丙二醇單甲醚乙酸酯67.5g,藉由在室溫下攪拌30分鐘,調製異物除去用塗膜形成組成物的溶液[4]。 (異物除去用塗膜形成組成物之評價) 使用旋轉塗佈機將此異物除去用塗膜形成組成物之溶液[4]塗佈於矽晶圓基板上後,在加熱板上,以200℃進行60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。所得之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。使用橢圓測厚儀測量此異物除去用塗膜的結果,波長248nm下之折射率(n值)為1.67,衰減係數(k值)為0.39、波長193nm下之折射率(n值)為1.53、衰減係數(k值)為0.42。 又,將燒成溫度設為190℃、210℃及220℃,同樣地形成異物除去用塗膜。然後,確認此等之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。
其次,使用阻劑顯影分析儀(Litho Tech Japan(股)製)測量對顯影液(東京應化工業(股)製、商品名NMD-3)之異物除去用塗膜的溶解速度。分析儀周邊之溫度為25℃。燒成溫度190℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒9.7nm。又,燒成溫度200℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒0.55nm,燒成溫度210℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒0.37nm,燒成溫度220℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒0.13nm。 換言之,燒成溫度190℃、燒成時間60秒所形成之異物除去用塗膜為約4.1秒,燒成溫度200℃、燒成時間60秒所形成之異物除去用塗膜為約72.7秒,燒成溫度210℃、燒成時間60秒所形成之異物除去用塗膜約108.1秒,燒成溫度220℃、燒成時間60秒所形成之異物除去用塗膜約307.7秒可完全除去,故存在於本異物除去用塗膜上的異物也可除去。 使用旋轉塗佈機將異物除去用塗膜形成組成物之溶液[4]塗佈於矽晶圓基板上後,在加熱板上,以210℃、60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。在所得之異物除去用塗膜上,形成KrF用正型光阻膜,通過設定為形成200nm之線寬/間距圖型的遮罩,以KrF準分子雷射(波長248nm)進行曝光。 110℃下曝光90秒鐘後進行加熱後,使用作為光阻用顯影液之2.38%氫氧化四甲銨水溶液(東京應化工業(股)製、商品名NMD-3)進行60秒鐘攪拌顯影。光阻與異物除去用塗膜及曝光部產生溶解,在200nm之線寬/間距也未看見殘膜。
實施例5 (聚醯胺酸之合成) 藉由將4,4’-(六氟異亞丙基)雙鄰苯二甲酸二酐17.8g、3,5-二胺基苯甲酸3.12g及雙(4-胺基苯基碸)4.92g在丙二醇單甲醚145.6g中,以80℃反應20小時,得到包含聚醯胺酸之溶液[C]。所得之聚醯胺酸進行GPC分析,重量平均分子量Mw=8600(標準聚苯乙烯換算)、數平均分子量Mn= 5200。 (異物除去用塗膜形成組成物之調製) 藉由在包含聚醯胺酸之溶液[C]25.0g中,添加吸光性化合物溶液[a]4.15g、4,4’-伸甲基雙(N,N-二環氧丙基苯胺基)1.13g、3,7-二羥基萘甲酸0.825g、三苯基鋶三氟甲磺酸鹽0.124g、丙二醇單甲醚82.8g、丙二醇單甲醚乙酸酯127g、環己酮10.0g,室溫下攪拌30分鐘,調製異物除去用塗膜形成組成物之溶液[5]。
(異物除去用塗膜形成組成物之評價) 使用旋轉塗佈機將此異物除去用塗膜形成組成物之溶液[5]塗佈於矽晶圓基板上後,在加熱板上,以175℃進行60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。所得之異物除去用塗膜不溶於丙二醇、乳酸乙酯及丙二醇單甲醚乙酸酯。使用橢圓測厚儀測量此異物除去用塗膜的結果,波長248nm下之折射率(n值)為1.80,衰減係數(k值)為0.44、波長193nm下之折射率(n值)為1.50、衰減係數(k值)為0.44。 又,將燒成溫度設為170℃及180℃,同樣地形成異物除去用塗膜。然後,確認此等之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。 其次,使用阻劑顯影分析儀(Litho Tech Japan(股)製)測量對顯影液(東京應化工業(股)製、商品名NMD-3)之異物除去用塗膜的溶解速度。分析儀周邊之溫度為25℃。燒成溫度170℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒2.35nm。又,燒成溫度175℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒2.00nm,燒成溫度180℃、燒成時間60秒所形成之異物除去用塗膜的溶解速度為每秒1.82nm。 換言之,燒成溫度170℃、燒成時間60秒所形成之異物除去用塗膜為17秒,燒成溫度175℃、燒成時間60秒所形成之異物除去用塗膜為20秒,燒成溫度180℃、燒成時間60秒所形成之異物除去用塗膜為22秒可完全除去,故存在於本異物除去用塗膜上的異物也可除去。 使用旋轉塗佈機將異物除去用塗膜形成組成物之溶液[5]塗佈於矽晶圓基板上後,在加熱板上,以220℃、60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。在所得之異物除去用塗膜上,形成KrF用正型光阻膜,通過設定為形成200nm之線寬/間距圖型的遮罩,以KrF準分子雷射(波長248nm)進行曝光。110℃下曝光90秒鐘後進行加熱後,使用作為光阻用顯影液之2.38%氫氧化四甲銨水溶液(東京應化工業(股)製、商品名NMD-3)進行60秒鐘攪拌顯影。光阻與異物除去用塗膜及曝光部產生溶解,在200nm之線寬/間距也未看見殘膜。
比較例1 (聚醯胺酸之合成) 藉由將均苯四甲酸二酐4.36g、p-苯二胺0.838g、2,2-雙(3-胺基-4-甲醯基)六氟丙烷4.26g於丙二醇單甲醚55.6g中,於60℃下反應25小時,得到聚醯胺酸溶液[D]。所得之聚醯胺酸進行GPC分析,重量平均分子量Mw=8600(標準聚苯乙烯換算)、數平均分子量Mn=4800。 (異物除去用塗膜形成組成物之調製) 藉由在聚醯胺酸溶液[D]14.0g中,添加實施例1使用之吸光性化合物溶液[a]4.38g、三(2,3-環氧基丙基)異氰脲酸酯0.630g、丙二醇單甲醚52.3g、丙二醇單甲醚乙酸酯67.5g,於室溫攪拌30分鐘,調製異物除去用塗膜形成組成物之溶液[6]。
(異物除去用塗膜形成組成物之評價) 使用旋轉塗佈機將此異物除去用塗膜形成組成物之溶液[6]塗佈於矽晶圓基板上後,在加熱板上,以200℃進行60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。所得之異物除去用塗膜不溶於乳酸乙酯及丙二醇單甲醚乙酸酯。使用橢圓測厚儀測量此異物除去用塗膜的結果,波長248nm下之折射率(n值)為1.68,衰減係數(k值)為0.40、波長193nm下之折射率(n值)為1.53、衰減係數(k值)為0.42。 由此異物除去用塗膜形成組成物之溶液[6]所形成之異物除去用塗膜不溶於2.38%氫氧化四甲銨水溶液(東京應化工業(股)製、商品名NMD-3)。 (膜形成後之延遲的影響評價) 使用旋轉塗佈機將異物除去用塗膜形成組成物之溶液[5]塗佈於矽晶圓基板上後,在加熱板上,以160℃、175℃及190℃進行60秒鐘燒成,形成膜厚40nm之異物除去用塗膜。膜剛形成後,及在晶圓盒(Wafer Case)內放置1日、3日、7日後之晶圓各自使用2.38%氫氧化四甲銨水溶液(東京應化工業(股)製、商品名NMD-3),進行60秒鐘攪拌顯影,使用橢圓測厚儀測量形成膜之晶圓面上的膜厚。結果上述全部之條件中,殘膜為1nm以下,故確認膜形成後放置7日後,也具有與膜剛形成後同樣的膜除去性。 [產業上之可利用性]
本發明係有關可提供可以簡便的方法除去形成於基板上之異物之異物除去用塗膜形成組成物、基板上之異物除去方法、基板處理方法、積層基板之製造方法。較佳為有關半導體裝置製造之半導體晶圓暫時接著步驟使用之異物除去用塗膜形成組成物。
Claims (10)
- 一種異物除去用塗膜形成組成物,其係包含聚合物及溶劑,可形成溶解於顯影液的塗膜。
- 如請求項1之組成物,其中前述聚合物為具有由(a)四羧酸二酐化合物與(b)具有至少1個羧基之二胺化合物所衍生之結構單位的聚醯胺酸。
- 如請求項1之組成物,其中前述聚合物為具有由(a)四羧酸二酐化合物與(b)具有至少1個羧基之二胺化合物所衍生的結構單位,及 具有由(a)四羧酸二酐化合物與(c)與(b)不同之二胺化合物所衍生之結構單位的聚醯胺酸。
- 如請求項3之組成物,其中前述(c)二胺化合物為不具有羧基的二胺化合物。
- 一種異物除去用塗膜,其特徵係由請求項1至請求項4中任一項之組成物所成之塗佈膜的燒成物。
- 一種異物除去方法,其係包含以下步驟: 將請求項1至請求項4中任一項之組成物塗佈於基板上,經燒成形成塗膜的步驟、於該塗膜上形成異物的步驟,及將該塗膜與異物一同使用顯影液除去的步驟。
- 如請求項6之方法,其中前述形成異物的步驟,包含在前述塗膜上形成接著層的步驟,及其後剝離前述接著層的步驟。
- 如請求項7之方法,其中前述異物為前述接著層的剝離殘渣。
- 一種基板處理方法,其係包含以下步驟: 將請求項1至請求項4中任一項之組成物塗佈於第一基板上,經燒成形成塗膜的步驟、 在前述塗膜上形成接著層的步驟、 使第二基板經由前述接著層暫時黏貼於前述第一基板的步驟、 將前述第二基板自前述第一基板剝離的步驟,及 在前述第二基板剝離後,殘存於前述第一基板上之前述塗膜與前述接著層一同使用顯影液除去的步驟。
- 一種積層基板之製造方法,其係包含以下步驟: 將請求項1至請求項4中任一項之組成物塗佈於第一基板上,經燒成形成塗膜的步驟、 在前述塗膜上形成接著層的步驟,及 將第二基板黏貼於前述第一基板的步驟。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017040803 | 2017-03-03 | ||
JP2017-040803 | 2017-03-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201843263A true TW201843263A (zh) | 2018-12-16 |
TWI834604B TWI834604B (zh) | 2024-03-11 |
Family
ID=63371389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107106956A TWI834604B (zh) | 2017-03-03 | 2018-03-02 | 異物除去用塗膜形成組成物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11319514B2 (zh) |
JP (1) | JP7268595B2 (zh) |
KR (1) | KR102501979B1 (zh) |
CN (1) | CN110366768B (zh) |
TW (1) | TWI834604B (zh) |
WO (1) | WO2018159665A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102498810B1 (ko) * | 2017-04-13 | 2023-02-10 | 제이에스알 가부시끼가이샤 | 반도체 기판 세정용 조성물 |
WO2022019287A1 (ja) * | 2020-07-21 | 2022-01-27 | 日産化学株式会社 | 異物除去用コーティング膜形成組成物 |
WO2023248946A1 (ja) * | 2022-06-21 | 2023-12-28 | 日産化学株式会社 | 異物除去用コーティング膜形成組成物及び半導体基板 |
WO2024117235A1 (ja) * | 2022-12-01 | 2024-06-06 | 日産化学株式会社 | 異物除去用コーティング膜形成組成物及び半導体基板 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI358612B (en) | 2003-08-28 | 2012-02-21 | Nissan Chemical Ind Ltd | Polyamic acid-containing composition for forming a |
KR101278460B1 (ko) | 2005-03-01 | 2013-07-02 | 다우 코닝 코포레이션 | 반도체 가공을 위한 임시 웨이퍼 접착방법 |
KR101277602B1 (ko) * | 2006-05-17 | 2013-06-21 | 가부시키가이샤 피아이 기쥬츠 켄큐쇼 | 금속 복합 필름 및 그 제조 방법 |
JP4557229B2 (ja) * | 2006-05-30 | 2010-10-06 | 日東電工株式会社 | クリーニング機能付搬送部材の製造方法 |
JP5092719B2 (ja) * | 2007-12-04 | 2012-12-05 | 日立化成工業株式会社 | 半導体装置及びその製造方法 |
WO2009090922A1 (ja) * | 2008-01-16 | 2009-07-23 | Hitachi Chemical Company, Ltd. | 感光性接着剤組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、半導体装置、及び、半導体装置の製造方法 |
KR101304590B1 (ko) * | 2010-03-11 | 2013-09-05 | 주식회사 엘지화학 | Oled 디바이스용 감광성 유기 절연재 조성물 |
JP2012233811A (ja) * | 2011-05-06 | 2012-11-29 | Nitto Denko Corp | クリーニングシート、クリーニング部材、クリーニング方法、および、導通検査装置 |
JP6252078B2 (ja) * | 2013-10-01 | 2017-12-27 | Jsr株式会社 | 液晶組成物、液晶表示素子及び液晶表示素子の製造方法 |
WO2015053132A1 (ja) * | 2013-10-07 | 2015-04-16 | 東レ株式会社 | 素子加工用積層体、素子加工用積層体の製造方法、およびこれを用いた薄型素子の製造方法 |
TWI525130B (zh) * | 2013-12-23 | 2016-03-11 | 奇美實業股份有限公司 | 液晶配向劑、液晶配向膜及液晶顯示元件 |
KR102294065B1 (ko) * | 2014-08-12 | 2021-08-26 | 가부시키가이샤 가네카 | 알콕시실란 변성 폴리아미드산 용액, 그것을 사용한 적층체 및 플렉시블 디바이스, 그리고 적층체의 제조 방법 |
KR20170125352A (ko) * | 2015-03-06 | 2017-11-14 | 도레이 카부시키가이샤 | 감광성 수지 조성물 및 전자 부품 |
-
2018
- 2018-02-28 JP JP2019503054A patent/JP7268595B2/ja active Active
- 2018-02-28 US US16/490,843 patent/US11319514B2/en active Active
- 2018-02-28 CN CN201880014924.3A patent/CN110366768B/zh active Active
- 2018-02-28 KR KR1020197025543A patent/KR102501979B1/ko active IP Right Grant
- 2018-02-28 WO PCT/JP2018/007471 patent/WO2018159665A1/ja active Application Filing
- 2018-03-02 TW TW107106956A patent/TWI834604B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI834604B (zh) | 2024-03-11 |
US20200140792A1 (en) | 2020-05-07 |
CN110366768B (zh) | 2023-09-26 |
US11319514B2 (en) | 2022-05-03 |
WO2018159665A1 (ja) | 2018-09-07 |
CN110366768A (zh) | 2019-10-22 |
KR102501979B1 (ko) | 2023-02-21 |
JPWO2018159665A1 (ja) | 2019-12-26 |
KR20190120234A (ko) | 2019-10-23 |
JP7268595B2 (ja) | 2023-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1666972B1 (en) | Use of a composition containing polyamic acid for forming an anti-reflective coating | |
TWI834604B (zh) | 異物除去用塗膜形成組成物 | |
WO2018052130A1 (ja) | 保護膜形成組成物 | |
CN110546569B (zh) | 抗蚀剂下层膜形成用组合物 | |
KR101195468B1 (ko) | 방향족 술폰산 에스테르 화합물 및 광산발생제를 포함하는 하층반사방지막 형성조성물 | |
WO2022019287A1 (ja) | 異物除去用コーティング膜形成組成物 | |
JP4466877B2 (ja) | ポリアミド酸を含む下層反射防止膜形成組成物 | |
TWI414891B (zh) | 使用二層型抗反射膜之光阻圖型之形成方法 | |
WO2024172010A1 (ja) | 半導体チップ製造用保護膜形成用組成物、半導体基板、半導体チップ、及び半導体チップの製造方法 | |
WO2024117235A1 (ja) | 異物除去用コーティング膜形成組成物及び半導体基板 | |
WO2023248946A1 (ja) | 異物除去用コーティング膜形成組成物及び半導体基板 |