TW201837212A - Divided sputtering target - Google Patents

Abstract

A divided sputtering target (1) according to one aspect of the embodiment is a divided sputtering target (1) formed by bonding a plurality of target materials (10) to a substrate (20), wherein among a dividing part (40) formed by arranging the plurality of target materials (10) spaced apart at an interval, flat surfaces (12) are respectively formed in at least a part of side surfaces (11) of a pair of target materials (10) arranged in at least a part of the dividing part (40), and as for the interval between the flat surfaces (12) facing each other in the dividing part (40), the interval (Lt) of the portion farthest to the substrate (20) is larger than the interval (Lb) of the portion closest to the substrate (20), and the surface roughness Ra of the flat surface (12) is 0.3 [mu]m or less.

Description

   Split sputtering target   

An embodiment of the present disclosure relates to a split sputtering target.

Conventionally, there is known a split sputtering target formed by bonding a plurality of targets arranged in a planar shape to a substrate using a bonding material (see, for example, Patent Document 1).

    (Prior technical literature)         (Patent Literature)    

Patent Document 1: Japanese Patent Application Laid-Open No. 2004-315931

However, in the conventional divided sputtering target, in a divided portion formed by arranging a plurality of targets at intervals, the bonding material is liable to adhere to the side of the target. Therefore, when the bonding material is adhered to the side surface of the target, metal particles may be generated when sputtering is performed to form a film.

On the other hand, the space between the side surfaces of the target facing each other in the divided portion is narrow, and the side surface of the target is standing upright from the base material. Therefore, it is difficult to recognize the side surface from above. Therefore, it is difficult to confirm the adhesion state of the bonding material to the side surface of the target. Furthermore, since the bonding material firmly adhered to the side surface of the target cannot be easily removed, there is a possibility that metal fine particles may be generated during film formation due to the bonding material adhered to the side surface.

One aspect of the embodiment is a researcher who developed the invention in view of the problems described above, and an object of the invention is to provide a split sputtering target that can easily confirm adhesion of a bonding material to a side surface of a target material facing in a divided portion. State, and the bonding material adhering to the side of the opposing target material in the divided portion can be easily removed.

A split sputtering target according to one aspect of the embodiment is formed by joining a plurality of targets to a substrate. In this split sputtering target, a split is formed by arranging a plurality of targets at intervals. Among the parts, at least a part of the side surfaces of the pair of the target materials arranged in at least a part of the divided part are each formed with a flat surface, and the distance between the flat surfaces facing each other in the divided part is a distance from the base. The distance between the farthest part of the material is larger than the distance between the nearest part of the substrate, and the surface roughness Ra of the flat surface is 0.3 μm or less.

According to one aspect of the embodiment, a divided sputtering target can be provided, which can easily confirm the adhesion state of the bonding material to the side of the target material facing in the divided portion, and can easily remove the adhesion. Bonding material on the side of the target facing in the divided portion.

1‧‧‧ split sputtering target

10‧‧‧ Target

11‧‧‧ side

12‧‧‧ flat surface

12a‧‧‧upper end

12b‧‧‧ lower end

13‧‧‧ joint surface

14‧‧‧ vertical plane

15‧‧‧Sputtered surface

16‧‧‧Chamfer

20‧‧‧ substrate

30‧‧‧Joint

40‧‧‧Division

θ‧‧‧ angle

Lt, Lb‧‧‧ interval

Ta‧‧‧thickness

Tp‧‧‧height

Fig. 1 is a perspective view of a split sputtering target according to an embodiment.

Fig. 2 is a sectional view taken along the line A-A of the arrow shown in Fig. 1.

Fig. 3 is an enlarged cross-sectional view of a cross-sectional shape of a divided portion according to Modification 1 of the embodiment.

Fig. 4 is an enlarged cross-sectional view of a cross-sectional shape of a divided portion according to a second modification of the embodiment.

Fig. 5 is an enlarged cross-sectional view of a cross-sectional shape of a divided portion according to Modification 3 of the embodiment.

    Implementation form    

Hereinafter, an embodiment of the split sputtering target disclosed in this application will be described with reference to the drawings. In addition, the relationship between the dimensions of each element of the drawing, the ratio of each element, and the like may be different from reality. In addition, between the drawings, there is a difference in the relationship or the ratio including the size of each other.

First, the outline of the divided sputtering target 1 according to the embodiment will be described with reference to FIG. 1. FIG. 1 is a perspective view of a split sputtering target 1 according to the embodiment.

The split sputtering target 1 includes a plurality of targets 10, a substrate 20, and a bonding material 30. Further, a plurality of target materials 10 are arranged on the base material 20, and the target materials 10 and the base material 20 are bonded by the bonding material 30 to form a split sputtering target 1.

The plurality of targets 10 are each formed into a flat plate shape having substantially the same size, for example. The targets 10 are formed in a rectangular shape in a plan view, for example, and are arranged on the base material 20 at a predetermined interval.

For example, in FIG. 1, six targets 10 are arranged in a matrix. In addition, the plurality of targets 10 need not be arranged in a matrix, for example, they may be arranged in a row.

The material of the target 10 is, for example, ITO (Indium Tin Oxide). On the other hand, the material of the target material 10 is not limited to ITO, and IGZO (Indium Gallium Zinc Oxide) or AZO (Aluminum Zinc Oxide) can be used.

The base material 20 has a shape corresponding to a desired size of the divided sputtering target 1. The material of the substrate 20 is, for example, copper having good electrical or thermal conductivity, or copper phosphate, titanium, aluminum, stainless steel, or the like.

The bonding material 30 joins the target material 10 and the base material 20. As the bonding material 30, for example, a solder material containing indium or tin as a main component can be used. For example, when ITO is used for the target 10, indium can be used as the bonding material 30.

Here, as shown in FIG. 1, in the split sputtering target 1, the target materials 10 are arranged at a certain interval from each other, whereby a split portion 40 is formed between a pair of adjacent target materials 10. Next, a detailed configuration of the division unit 40 will be described with reference to FIG. 2.

Fig. 2 is a cross-sectional view taken along the line A-A of the arrow shown in Fig. 1 and an enlarged cross-sectional view of the divided portion 40 and its vicinity. As shown in FIG. 2, in the divided portion 40, the side surfaces 11 of the adjacent pair of target materials 10 face each other.

Here, in the embodiment, a flat surface 12 is formed on at least a part of the two side surfaces 11 facing each other. In FIG. 2, flat surfaces 12 are formed in the entirety of the opposite side surfaces 11.

Further, regarding the interval between the flat surfaces 12 facing each other in the divided portion 40, the interval Lt of the portion furthest from the base material 20 is larger than the interval Lb of the portion closest to the base material 20. Among them, the interval Lt is the distance between the upper end portions 12 a farthest from the base material 20 in the flat surface 12, and the interval Lb is the distance between the lower end portions 12 b closest to the base material 20 in the flat surface 12. In other words, in the divided portion 40, the gap formed by the flat surfaces 12 is opened upward so as to have a wide end.

This makes it possible to easily identify the side surface 11 (flat surface 12) when identifying from above. Therefore, according to the embodiment, the adhesion state of the bonding material 30 to the side surface 11 of the target material 10 facing the divided portion 40 can be easily confirmed.

In the embodiment, the surface roughness Ra of the flat surface 12 is 0.3 μm or less. The surface roughness is an arithmetic average roughness Ra, and the same applies to the following description. As described above, by processing the flat surface 12 to have a surface roughness Ra of 0.3 μm or less, the bonding material 30 adhering to the flat surface 12 can be easily removed.

This is because by setting the surface roughness Ra of the flat surface 12 to 0.3 μm or less, the anchoring effect (anchoring effect) on the surface of the flat surface 12 can be reduced, and the adhesion of the bonding material 30 to the flat surface 12 can be reduced. .

That is, in the embodiment, the interval Lt of the portion furthest from the substrate 20 is made larger than the interval Lb of the portion closest to the substrate 20, and the surface roughness Ra of the flat surface 12 is 0.3 μm or less. The adhesion state of the bonding material 30 to the side surface 11 of the target material 10 facing in the divided portion 40 can be easily confirmed, and the adhesion of the bonding material 30 to the side surface 11 of the target material 10 facing in the divided portion 40 can be easily removed.联 材 30。 Joint material 30. Therefore, if the divided sputtering target 1 of the embodiment is used, sputtering can be performed stably for a long time.

In the divided portion 40, the difference between the interval Lt of the portion furthest from the base material 20 and the interval Lb of the portion closest to the base material 20 is preferably 0.1 mm or more. Thereby, the gap formed by the flat surfaces 12 is widened toward the upper end. Therefore, it is possible to more easily confirm the adhesion state of the bonding material 30 to the side surface 11 of the target 10 facing in the divided portion 40.

The difference between the distance Lt of the portion furthest from the base material 20 and the distance Lb of the portion closest to the base material 20 is preferably 0.2 mm or more, and more preferably 0.3 mm or more.

In addition, in the divided portion 40, the interval Lt of the portion farthest from the substrate 20 may be 0.2 mm or more and 0.7 mm or less, and more preferably 0.3 mm or more and 0.6 mm or less. In addition, the interval Lb of the portion closest to the substrate 20 may be 0.1 mm or more and 0.5 mm or less, and more preferably 0.1 mm or more and 0.3 mm or less.

By setting the interval Lt and the interval Lb to the above-mentioned intervals, the visibility of the side surface 11 (flat surface 12) can be ensured from above, and the area of the bonding material 30 exposed upward from the divided portion 40 can be reduced. Therefore, according to the embodiment, when the split sputtering target 1 is sputter-formed into a film, the bonding material 30 exposed by the split portion 40 can be prevented from becoming impurities.

Furthermore, in the embodiment, by processing the flat surface 12 to have a surface roughness Ra of 0.3 μm or less, the anchoring effect on the flat surface 12 can be reduced as described above, and thus the adhesion of the bonding material 30 to the flat surface 12 can be suppressed. Situation.

This can suppress the generation of metal particles caused by the bonding material 30 adhered to the side surface 11 (flat surface 12) when the sputtering filming is performed. Therefore, according to the embodiment, the sputtering film formation by the divided sputtering target 1 can be stably performed.

The surface roughness Ra of the flat surface 12 is preferably 0.1 μm or less, and more preferably 0.001 μm or more and 0.05 μm or less. As described above, by making the surface roughness Ra of the flat surface 12 smaller, it is possible to further suppress the adhesion of the bonding material 30 to the flat surface 12. In addition, by setting the surface roughness Ra to 0.001 μm or more, an increase in processing cost can be suppressed, and thus an increase in the manufacturing cost of the divided sputtering target 1 can be suppressed.

Furthermore, in the embodiment, as shown in FIG. 2, when the side surface 11 is viewed in cross section, the angle θ formed by the flat surface 12 and the bonding surface 13 of the target 10 bonded to the base material 20 may be less than 90 °. . That is, the two flat surfaces 12 facing each other can be inclined in a direction recognizable from above.

Thereby, the corner portion formed on the end portion 12 a on the flat surface 12 can be made an obtuse angle. Therefore, according to the embodiment, since the corner portion formed at the upper end portion 12a can be prevented from being easily broken, the reliability of the split sputtering target 1 can be improved.

Furthermore, by making the corners of the end portions 12a formed on the flat surface 12 obtuse, it is possible to suppress arcing from occurring at the corners when sputtering is performed to form a film. This is because, although the arc phenomenon occurs when charges are concentrated on the corners of the target 10 when sputtering is performed, the concentration of the charges can be suppressed by making the corners an obtuse angle. Therefore, according to the embodiment, the sputtering film formation by the divided sputtering target 1 can be stably performed.

In addition, among the two flat surfaces 12 facing each other, the angle θ of one flat surface 12 and the angle θ of the other flat surface 12 may be the same angle or different angles.

Moreover, it is not necessary to incline the two flat surfaces 12 facing each other. For example, as shown in FIG. 3, the flat surface 12 of only one side (the left side in FIG. 3) may be inclined, and the flat surface 12 of the other side (the right side in FIG. 3) may be formed from the joint surface 13. Rising roughly vertically. FIG. 3 is an enlarged cross-sectional view showing a cross-sectional shape of the divided portion 40 according to the first modification of the embodiment.

Even when the divided portion 40 is configured as shown in the cross-sectional shape shown in FIG. 3, the gap formed by the flat surfaces 12 is widened diagonally upward, so that the side surface 11 (flat The identification of face 12) becomes easy.

FIG. 4 is an enlarged cross-sectional view showing a cross-sectional shape of the divided portion 40 according to the second modification of the embodiment. In the second modification, a vertical surface 14 standing upright from the bonding surface 13 is formed on the side surface 11 between the flat surface 12 and the bonding surface 13. That is, in the second modification, the side surface 11 includes an upper flat surface 12 and a lower vertical surface 14, and a lower end portion 12 b of the flat surface 12 is disposed between the flat surface 12 and the vertical surface 14.

Even in the second modification, the interval Lt between the upper end portions 12 a is larger than the interval Lb between the lower end portions 12 b of the flat surface 12, so that it can be easily confirmed that the bonding material 30 is opposed to the division portion 40. Adhesion state of the side surface 11 of the target 10.

In the second modification, the ratio of the height Tp of the vertical surface 14 to the thickness Ta of the target 10 may be 0.2 or less. Thereby, it is possible to sufficiently secure the size of the gap formed by the ends formed by the flat surfaces 12 to be wide enough to allow the vertical surface 14 to be recognized.

In addition, in the second modification, the vertical surface 14 and the bonding surface 13 do not necessarily need to be perpendicular, and the angle formed by the vertical surface 14 and the bonding surface 13 need only be within a range of 90 ° ± 3 °.

Fig. 5 is an enlarged cross-sectional view showing a cross-sectional shape of the divided portion 40 according to the third modification of the embodiment. In this modification 3, a chamfered portion 16 is formed on a side surface 11 between the flat surface 12 and the sputtered surface 15. That is, in the modification 3, the side surface 11 has a lower flat surface 12 and an upper chamfered portion 16, and an upper end portion 12a of the flat surface 12 is disposed between the flat surface 12 and the chamfered portion 16. .

Even in the third modification, the interval Lt between the upper end portions 12 a is larger than the interval Lb between the lower end portions 12 b of the flat surface 12, so that it is easy to confirm that the bonding material 30 is facing the target facing the division portion 40. Adhesion state of the side surface 11 of the material 10.

In addition, in the modification 3, by forming the chamfered portion 16 on the upper side of the flat surface 12, the corner portion formed on the end portion 12a on the flat surface 12 can be made an obtuse angle. Therefore, according to the modification 3, the corner portion formed at the upper end portion 12a can be made less likely to be broken. In addition, when sputtering is performed to form a film, an arc phenomenon from the corner can be further suppressed.

In addition, both the vertical surface 14 shown in the modification 2 and the chamfered part 16 shown in the modification 3 may be formed on the side surface 11 of the target 10. That is, the side surface 11 may be formed into a chamfered portion 16, a flat surface 12, and a vertical surface 14 in this order from the top to the bottom. In this case, an upper end portion 12 a of the flat surface 12 is disposed between the chamfered portion 16 and the flat surface 12, and a lower end portion 12 b of the flat surface 12 is disposed between the vertical surface 14 and the flat surface 12.

In the embodiment and the modification described here, the flat surface 12 described above may be formed on at least a part of the divided portion 40 formed on the target 10. Thereby, in the division part 40 which forms this flat surface 12, the adhesion state of the bonding material 30 to the side surface 11 can be easily confirmed.

Furthermore, it is more preferable to form the above-mentioned flat surface 12 in the divided portions 40 formed on the entire target 10. Thereby, the adhesion state of the bonding material 30 to the side surface 11 can be easily confirmed in all the divided portions 40 of the target 10, and the bonding material 30 attached to the side surface 11 can be easily removed in all the divided portions 40. .

Furthermore, all of the flat surfaces 12 formed in the divided portions 40 of the target 10 facing each other may be inclined from above in a recognizable direction. Thereby, the corners formed on the end portions 12a on all the flat surfaces 12 can be made obtuse, and the corners formed on the upper end portion 12a cannot be easily broken in all the divided portions 40 of the target 10. Therefore, the reliability of the split sputtering target 1 can be further improved.

In addition, since the arc phenomenon during the sputtering film formation can be further suppressed, the sputtering film formation by dividing the sputtering target 1 can be performed more stably.

    (Example)    

Example 1

SnO ₂ powder formulations measured by the BET (Brunauer-Emmett-Teller, Bue Te) specific surface area (BET specific surface area) is 5m ² / g 10% by mass, and the BET specific surface area of 5m ² / g of In ₂ The O ₃ powder was 90% by mass, and was mixed with a ball mill in a tank by a zirconia ball to prepare a raw material powder.

In this tank, 0.3% by mass of acrylic latex adhesive, 0.5% by mass of polycarboxylic acid amine, and 20% by mass of water were added to 100% by mass of the raw material powder, and they were mixed with a ball mill to prepare a slurry. Next, the prepared slurry was flowed into a metal mold placed through a filter, and was drained to obtain a molded body.

This formed body was heated from a normal temperature to 1600 ° C at a temperature increase rate of 300 ° C / h and held for 12 hours, and then cooled at a temperature decrease rate of 50 ° C / h to perform calcination of the formed body to produce a calcined body. Then, the calcined body is cut into a predetermined size.

The obtained calcined body was subjected to a grinding process to obtain two ITO target materials 10 with a thickness of 8 mm. The sides of the two targets 10 are cut, and a side 11 having an inclination of θ = 89.6 ° is provided. Next, the side surface 11 of the two targets 10 was ground with a # 1000 grinding stone manufactured by Mitsui Grinding Stone Co., Ltd., and then polished with a diamond polishing pad # 5000 manufactured by Noritake Co., Ltd. to obtain a surface roughness Ra of 0.02 μm or less. To form a flat surface 12. The surface roughness Ra was measured using a surface roughness measuring machine manufactured by Mitutoyo Corporation.

Next, the obtained two target materials 10 are arranged on a copper base material 20 and joined to obtain a divided sputtering target 1. In addition, the bonding material 30 is made of indium, and the interval Lt of the portion furthest from the substrate 20 is 0.2 mm, and the interval Lb of the portion closest to the substrate 20 is 0.1 mm (that is, Lt-Lb = 0.1 mm).

Examples 2 to 33

By the same method as in Example 1, two ITO targets 10 were obtained. The angle θ between the flat surface 12 and the joint surface 13 of both targets 10 and the surface roughness Ra of the flat surface 12 are processed to the values in the first table. Then, the two targets 10 are aligned and bonded to the substrate such that the interval Lt of the portion furthest from the substrate 20 and the interval Lb of the portion nearest the substrate 20 are Lt-Lb. 20 to obtain the split sputtering target 1.

Comparative Example 1

By the same method as in Example 1, two ITO targets 10 were obtained. The two targets 10 are processed so that the angle between the flat surface 12 and the joint surface 13 is θ = 90 °, and the surface roughness Ra of the flat surface 12 is 0.02 μm or less. Further, the two targets were set such that the interval Lt of the portion furthest from the substrate 20 was 0.5 mm, and the interval Lb of the portion closest to the substrate 20 was 0.5 mm (that is, Lt-Lb was zero). 10 is aligned and bonded to the substrate 20 to obtain a split sputtering target 1.

Comparative Example 2

By the same method as in Example 1, two ITO targets 10 were obtained. The angle θ between the flat surface 12 and the joint surface 13 of the two targets 10 is processed to the values in the first table, and the surface roughness Ra of the flat surface 12 is processed to 0.4 μm. In addition, the two targets 10 are aligned and bonded to the substrate so that the interval Lt of the portion furthest from the substrate 20 and the interval Lb of the portion closest to the substrate 20 are Lt-Lb. Material 20 to obtain a split sputtering target 1.

Next, the visibility of the division part 40 of the division sputtering target 1 of Examples 1 to 33 and Comparative Examples 1 and 2 obtained from the above was visually evaluated. The evaluation criteria are as follows.

◎: Very recognizable

○: Good recognizability

△: slightly indistinguishable

×: Poor visibility

Next, for the divided sputtering targets 1 of Examples 1 to 33 and Comparative Examples 1 and 2, the indium removal operation attached to the side surface 11 of the divided portion 40 was performed. In this removal operation, the division portion 40 is visually confirmed, and the portion where the indium is adhered is removed using a metal spatula.

Next, two pieces of the target material 10 were peeled from the split sputtering targets 1 of Examples 1 to 33 and Comparative Examples 1 and 2, and the degree of adhesion of indium to the side surface 11 was visually evaluated. The evaluation criteria are as follows.

◎: No In adhesion

○: In is slightly adhered

△: A small amount of In adheres

×: A large amount of In adhered

The first table shows: the thickness Ta of the target material 10 in the above Examples 1 to 33 and Comparative Examples 1 and 2; the interval Lt of the portion farthest from the substrate 20; the interval Lb of the portion closest to the substrate 20; Lt-Lb; the angle θ between the flat surface 12 and the joint surface 13 in the target 1 and the target 2; the evaluation result of the visibility of the divided portion 40; and the evaluation result of the adhesion amount of indium to the side surface 11.

Comparing Comparative Example 1 in which the interval Lb is the same as the interval Lt in the dividing section 40 and Examples 1 to 33 in which the interval Lt is larger than the interval Lb in the dividing section 40, it can be seen that the interval Lt is made larger than the interval Lb. , Can improve the visibility of the segmentation portion 40.

Further, it can be seen from Comparative Example 2 in which the surface roughness Ra of the flat surface 12 is larger than 0.3 μm, and Examples 1 to 33 in which the surface roughness Ra of the flat surface 12 is 0.3 μm or less. The roughness Ra is 0.3 μm or less, and the bonding material 30 (indium) adhered to the side surface 11 of the target 10 facing in the divided portion 40 can be easily removed.

In addition, in Comparative Example 1, although the surface roughness Ra of the flat surface 12 was 0.3 μm or less, the visibility of the divided portion 40 was poor, and it was difficult to confirm the bonding material 30 (indium) adhered to the side surface 11. Therefore, the bonding material 30 cannot be easily removed, and a large amount of the bonding material 30 is adhered to the side surface 11.

Although the embodiment of the present invention has been described above, the present invention is not limited to the above-mentioned embodiment, and various changes can be made without departing from the gist thereof. For example, although the flat split sputtering target is described in the embodiment, the above-mentioned embodiment technology can also be applied to a cylindrical split sputtering target.

As described above, the divided sputtering target 1 of the embodiment is formed by joining a plurality of targets 10 to a base material 20. In this divided sputtering target 1, a plurality of targets are arranged at intervals. Of the divided portions 40 formed of the material 10, at least a part of the side surface 11 of the pair of target materials 10 arranged in at least one of the divided portions 40 is formed with a flat surface 12, respectively. Further, regarding the interval between the flat surfaces 12 facing each other in the divided portion 40, the interval Lt of the portion furthest from the substrate 20 is larger than the interval Lb of the portion closest to the substrate 20, and the surface of the flat surface 12 is rough. The degree Ra is 0.3 μm or less. Thereby, the adhesion state of the bonding material 30 to the side surface 11 of the target material 10 facing in the divided portion 40 can be easily confirmed, and the bonding of the side surface 11 of the target material 10 opposed to the division portion 40 can be easily removed.材 30.

Furthermore, in the divided sputtering target 1 of the embodiment, the distance Lt between the portions formed by the flat surfaces 12 farthest from the substrate 20 and the portion closest to the substrate 20 formed by the flat surfaces 12 each other. The difference between the intervals Lb is 0.1 mm or more. This makes it possible to more easily confirm the adhesion state of the bonding material 30 to the side surface 11 of the target 10 facing in the divided portion 40.

Further, in the split sputtering target 1 of the embodiment, a vertical surface standing substantially perpendicularly from the bonding surface 13 is further formed on the side surface 11 between the flat surface 12 and the bonding surface 13 bonded to the base material 20. 14 and the ratio of the height Tp of the vertical plane 14 to the thickness Ta of the target 10 is set to 0.2 or less. Thereby, the width | variety of the wide gap of the edge formed by the flat surfaces 12 can fully ensure that the vertical surface 14 can be visually recognized.

In the split sputtering target 1 according to the embodiment, the distance Lt between the parts formed by the flat surfaces 12 and the farthest distance from the substrate 20 is 0.2 mm or more and 0.7 mm or less, and the distance formed by the flat surfaces 12 The interval Lb of the nearest part of the base material 20 is 0.1 mm or more and 0.5 mm or less. Thereby, when the split sputtering target 1 is sputter-formed, the bonding material 30 exposed from the split portion 40 can be prevented from becoming impurities.

Further, in the divided sputtering target 1 of the embodiment, the distance Lt between the parts formed by the flat surfaces 12 farthest from the base material 20 is 0.3 mm or more and 0.6 mm or less, and the flat surfaces 12 are formed by each other. The interval Lb of the portion closest to the substrate 20 is 0.1 mm or more and 0.3 mm or less. With this, when the split sputtering target 1 is sputter-formed, it is possible to further suppress the bonding material 30 exposed from the split portion 40 from becoming impurities.

In the split sputtering target 1 of the embodiment, the surface roughness Ra of the flat surface 12 is 0.1 μm or less. Thereby, the situation where the bonding material 30 adheres to the flat surface 12 can still be suppressed.

In the split sputtering target 1 of the embodiment, the surface roughness Ra of the flat surface 12 is 0.001 μm or more and 0.05 μm or less. This makes it possible to further suppress the adhesion of the bonding material 30 to the flat surface 12.

Further, in the divided sputtering target 1 according to the embodiment, at least a part of the side surface 11 of the target material 10 arranged in all the divided portions 40 is formed with a flat surface 12, and is opposed to each other in all the divided portions 40. The distance Lt between the flat surfaces 12 is greater than the distance Lb between the parts farthest from the substrate 20 and the surface roughness Ra of the flat faces 12 is 0.3 μm or less. Thereby, the adhesion state of the bonding material 30 to the side surface 11 can be easily confirmed in all the divided portions 40 of the target material 10, and the bonding material 30 attached to the side surface 11 of the target material 10 can be easily removed.

Further, in the divided sputtering target 1 of the embodiment, at least a part of the side surface 11 of the target material 10 arranged in all the divided portions 40 is formed with a flat surface 12, and in all the divided portions 40, the flat surface is formed by the flat surface. The difference between the interval Lt of the portion formed farthest from the base material 20 and the distance Lb of the portion formed closest to the base material 20 formed by the flat surfaces 12 are 0.1 mm or more. This makes it possible to more easily confirm the adhesion state of the bonding material 30 to the side surface 11 of the target 10 in all the divided portions 40 of the target 10.

Further effects or modifications can be easily derived by the person skilled in the art. Therefore, the broader aspects of the present invention are as described above, and are not limited to the specific detailed description and representative embodiments described. Therefore, various changes can be made without departing from the spirit or scope of the general inventive concept as defined by the scope of the appended patent applications and their equivalents.

Claims (9)

    A split sputtering target is formed by joining a plurality of targets to a substrate. In the split sputtering target, among the divided parts formed by disposing the plurality of targets at intervals, the At least a part of the side surfaces of the pair of targets arranged in at least a part of the divided portion are each formed with a flat surface, and the distance between the flat surfaces facing each other in the divided portion is the portion farthest from the substrate. The interval is larger than that at the portion closest to the substrate, and the surface roughness Ra of the flat surface is 0.3 μm or less.         The split sputtering target according to item 1 of the scope of patent application, wherein a distance between a portion formed by the flat surfaces and the furthest distance from the substrate is closest to a distance formed by the flat surfaces and the substrate. The difference in the intervals between the portions is 0.1 mm or more.         The split sputtering target according to item 1 of the scope of patent application, wherein, in the side surface, between the flat surface and the bonding surface bonded to the base material, a vertical rise from the bonding surface is formed. The ratio of the height of the vertical surface to the thickness of the target is 0.2 or less.         The split sputtering target according to any one of claims 1 to 3, wherein a distance between a portion formed by the flat surfaces and the farthest distance from the substrate is 0.2 mm or more and 0.7 mm or less. The distance between the nearest part of the base material formed by the flat surfaces is 0.1 mm or more and 0.5 mm or less.         The split sputtering target according to any one of claims 1 to 3, wherein a distance between a portion formed by the flat surfaces and the farthest distance from the substrate is 0.3 mm or more and 0.6 mm or less. The distance between the parts closest to the substrate formed by the flat surfaces is 0.1 mm or more and 0.3 mm or less.         The split sputtering target according to any one of claims 1 to 3, wherein the surface roughness Ra of the flat surface is 0.1 μm or less.         The split sputtering target according to any one of claims 1 to 3, wherein the surface roughness Ra of the flat surface is 0.001 μm or more and 0.05 μm or less.         The split sputtering target according to item 1 of the patent application scope, wherein at least a part of the side surfaces of the target material arranged in all the divided portions is formed with the flat surface, and in all the divided portions, The distance between the flat surfaces facing each other is larger at the portion farthest from the substrate than at the portion closest to the substrate, and the surface roughness Ra of the flat surfaces is 0.3 μm or less.         The split sputtering target according to item 1 of the scope of patent application, wherein at least a part of the side surfaces of the target material arranged in all the divided portions is formed with the flat surface, and in all of the divided portions, A difference between a distance between a portion of the flat surfaces that is the furthest from the substrate and a distance between a portion of the flat surfaces that is the closest to the substrate is 0.1 mm or more.