TWI653209B - Target, method for producing target and planar target - Google Patents

Abstract

The present invention provides a target material, wherein the target material is a flat plate-shaped ceramic, and the target has a surface roughness Ra of 0.5 to 1.5 μm or less for the sputtered surface to be sputtered, and is formed in a crack of the sputtered surface. The maximum depth is 15 μm or less.

Description

Target, target manufacturing method, and flat target

The embodiment disclosed in the present invention relates to a target, a method for producing a target, and a flat target.

A sputtering apparatus is known in which an argon ion is caused to collide with a main surface (sputtering surface) of a flat-shaped target to fly a target component, and is disposed on a substrate facing the main surface of the target. The surface forms a film.

As such a target, there are known ceramics and ceramics. In the ceramics, the fired body obtained by molding and firing a powder or particles containing a ceramic component such as a metal oxide is machined to a predetermined size by cutting or polishing.

In the sputtering apparatus, the processing precision of the target affects the quality of the thin mold (sputtering film) formed on the surface of the substrate. Therefore, measures for improving the quality of the film have been reviewed for the processing of the target made of ceramics (for example, refer to Patent Documents 1 and 2).

(previous technical literature) (Patent Literature)

Patent Document 1: Japanese Laid-Open Patent Publication No. 2000-135663

Patent Document 2: Japanese Laid-Open Patent Publication No. 2007-231392

However, in the above-mentioned conventional technique, there is still no possibility of obtaining a target which simultaneously suppresses the generation of nodule in the sputtering and the particles adhering to the sputtering film, and there is room for further improvement. The nodule refers to a foreign matter derived from a target which appears on the surface of the target, and the particle refers to a particulate foreign matter attached to the surface of the sputtered film.

An aspect of an embodiment of the present invention is directed to the above-mentioned problems, and an object of the present invention is to provide a target, a method for producing a target, and a flat target, which can simultaneously suppress the occurrence of nodules in sputtering and Adhesive to the particles of the sputtered film.

The target material of the embodiment is a flat ceramic having a surface roughness Ra of 0.5 μm or more and 1.5 μm or less and a maximum depth of the crack formed in the sputtering surface of 15 μm or less.

According to one aspect of the embodiment, it is possible to provide a target, a method for producing a target, and a flat-shaped target, which can simultaneously suppress generation of nodules during sputtering and adhesion of particles to the sputter film.

1‧‧‧ Target

2‧‧‧floor

3‧‧‧Material

4‧‧‧ Splashing surface

5‧‧‧ crack

6‧‧‧ Back

11‧‧‧Ceramics

12‧‧‧ Tangent

13‧‧‧ mounting table

14‧‧‧guide pulley

15‧‧‧ drive pulley

16‧‧‧Manufacture of equipment

Fig. 1A is a schematic view showing the configuration of a flat target of an embodiment. intention.

Fig. 1B is a cross-sectional view taken along line A-A' of Fig. 1A.

Fig. 2A is a schematic view showing the configuration of a target of the embodiment.

Fig. 2B is an enlarged view of the B-B' section of Fig. 2A.

Fig. 3A is a schematic explanatory view showing a method of producing a target according to an embodiment.

Fig. 3B is a schematic explanatory view showing a method of manufacturing the target material of the embodiment.

Fig. 4 is a flow chart showing an example of a method of producing a target according to an embodiment.

Hereinafter, the embodiment of the present invention, the method for producing the target, and the embodiment of the flat target will be described in detail with reference to the drawings. Further, the present invention is not limited to the embodiments shown below.

First, the flat-shaped target that can be applied to the target of the embodiment will be described below using FIGS. 1A and 1B.

Fig. 1A is a schematic view showing the configuration of a flat-shaped target of an embodiment, and Fig. 1B is a cross-sectional view taken along line A-A' of Fig. 1A. In addition, in order to make the description easy, in the first A diagram and the first panel diagram, a three-dimensional orthogonal coordinate system including a Z-axis is set, and the Z-axis system is set to be a vertical direction in a vertical direction and a vertical direction in a vertical direction. The above-mentioned right angle coordinate system is also shown in the other drawings used in the descriptions described later.

As shown in FIGS. 1A and 1B, the flat target includes the target 1 and the bottom plate 2. The target 1 and the bottom plate 2 are joined by the bonding material 3 .

The target 1 is made of a ceramic processed into a flat plate, and the sputtered surface 4 for sputtering and the back surface 6 opposite to the sputtered surface 4 are substantially parallel. Examples of such ceramics include, for example, ITO (In ₂ O ₃ -SnO ₂ ), IGZO (In ₂ O ₃ -Ga ₂ O ₃ -ZnO), and AZO (Al ₂ O ₃ -ZnO), but are not limited thereto. These are the same.

Further, as for the bottom plate 2, those skilled in the art can be appropriately selected and used. For example, stainless steel, titanium, titanium alloy, copper, or the like can be applied, but it is not limited to these.

Further, as for the bonding material 3, those skilled in the art can be appropriately selected and used. For example, indium metal or the like can be exemplified, but it is not limited to these.

Hereinafter, the target 1 of the embodiment will be further described using FIGS. 2A and 2B. Fig. 2A is a schematic view showing the configuration of the target 1 of the embodiment, and Fig. 2B is an enlarged view of the B-B' section shown in Fig. 2A.

As shown in FIG. 2A, a crack 5 may be formed on the sputtering surface 4 of the target 1. The crack 5 is, for example, a micro crack generated on the sputtering surface 4 during processing, and is also called "microcrack".

As shown in FIG. 2B, the slit 5 has a certain width and length on the sputtering surface 4, and has a depth d in the thickness direction perpendicular to the sputtering surface 4. The width and length of the slit 5 can be observed from the outside by SEM (Scanning Electron Microscope) or the like. On the other hand, the depth d is difficult to observe from the outside. Therefore, the measurement of the depth d is performed by, for example, including the crack 5, preferably by cutting the target 1 in the Z-axis direction along the crack 5, and exposing the cross section, and then observing it by SEM.

In the target 1 of the embodiment, the maximum depth (hereinafter also referred to as "maximum depth") d _max formed in the crack 5 of the sputtering surface 4 is 15 μm or less, preferably 10 μm or less. When the maximum depth d _{max of the} crack 5 exceeds 15 μm, the nodules are likely to be generated during sputtering, and there is also a case where the mechanical strength of the target 1 is affected. The "maximum depth d _max of the crack 5" is the largest value among the depths d of the cracks 5 measured as described above.

Further, the sputtering surface 4 of the target 1 has a surface roughness Ra of 0.5 μm or more and 1.5 μm or less, preferably 0.5 μm or more and 1.0 μm or less. When the surface roughness Ra of the sputtering surface 4 is less than 0.5 μm, the tumor produced by the target 1 during sputtering does not remain on the target 1 and the particles adhere to the sputtering film, which tends to lower the quality of the sputtering film. Further, when the surface roughness Ra of the sputter surface 4 exceeds 1.5 μm, the initial arcing at the time of sputtering increases the number of nodules, so that it is difficult to form a uniform sputter film. The surface roughness Ra is a value equivalent to "arithmetic average roughness Ra" of JIS (Japanese Industrial Standard) B0601:2013.

Further, the ceramic using the case of ITO, the target bending strength is preferably from 1 16kgf / mm ² more, more preferably 17kgf / mm ² more. When the bending strength is less than 16 kgf/mm ² , there are many doubts that there are many micro cracks (intrinsic cracks) existing inside the target 1 . If the target 1 has a plurality of intrinsic cracks, a nodule resulting from the intrinsic crack occurs in the sputtering. Therefore, the more the internal cracks, the more the rate of occurrence of the nodules increases, and there is a concern that the quality of the sputtered film is lowered. The flexural strength is based on the value measured in JIS R1601:2008. Further, 1 kgf is about 9.8 N.

IGZO case of using ceramic, the target is preferably a flexural strength of 6kgf / mm ² or more, more preferably 7kgf / mm ² or more. If the bending strength is less than 6 kgf/mm ² , for example, there is a concern that the target 1 has an internal crack.

AZO case of using ceramic, the target of an optimum flexural strength was 15kgf / mm ² or more, more preferably 16kgf / mm ² or more. If the bending strength is less than 15 kgf/mm ² , for example, there is a concern that the target 1 has an internal crack.

In addition, in the above-mentioned, the flat-shaped target material 1 has a short side in the X-axis direction and a long side in the Y-axis direction in the sputtering surface 4 for sputtering, and has a thickness in the Z-axis direction. The shape of the rectangular parallelepiped is described, but the shape is not limited to this. Depending on the shape of the substrate to be film-formed, for example, the sputter surface 4 may be square, circular or elliptical, and a polygonal shape such as a triangle, a parallelogram, a ladder, a pentagon or a hexagon may be used as the target 1 . .

Hereinafter, an example of a method of manufacturing the target 1 of the embodiment will be described. The target 1 is produced by a granulation step of granulating a slurry containing a ceramic raw material powder and an organic additive to prepare a granule, and a molding step of molding the granule to prepare a molded body; In the firing step, the formed body is fired to produce a fired body. The method for producing the fired body is not limited to the above, and may be any method.

However, in order to process into a predetermined thickness and form a sputter surface 4 having a predetermined surface roughness, it is known to process a fired body using a processing machine called a flat grinder. In the plane grinder, the fired body is placed in such a manner that the surface to be processed (the corresponding surface of the sputter surface 4) is above. It is placed on a carrying table and surface treated with grinding stones.

In the above-described plane grinder, since the grinding stone presses the plane of the fired body at a fixed cutting depth while processing, the target 1 obtained by using the plane grinder is easily splashed due to damage during processing. The plated surface 4 forms a crack 5 having a maximum depth d _max exceeding 15 μm. In particular, when the fired body which is warped at the time of firing is processed, when the fired body is placed on the stage of the plane grinder, since the portion which floats from the stage is generated, the grinding is performed. Pressing the stone on it will subject the fired body to a large load.

The load in the processing increases in proportion to the area of the sputtering surface 4, but in recent years, the area of the sputtering surface 4 has a tendency to require the target 1 which is large, so the crack generated in the processing using the grinding stone is used. 5 also has a tendency to increase the maximum depth d _max .

In the method of reducing the maximum depth d _max of the crack 5 formed on the sputtering surface 4, it is conceivable to gradually polish the surface by a small amount of polishing paper or the like, but in this case, it is easy to make the sputtered surface 4 after polishing. The surface roughness Ra was less than 0.5 μm. That is, in the conventional processing method, the depth d of the crack 5 formed on the sputtering surface 4 and the surface roughness Ra of the sputtering surface 4 cannot be individually controlled, and it is difficult to simultaneously suppress the generation of the nodules and suppress the sputtering film. The particles are attached.

The method for producing the target 1 of the embodiment includes a supporting step of supporting the ceramic and a cutting step of cutting the ceramic. Hereinafter, an example of the support step and the cutting step will be described in detail using FIGS. 3A and 3B.

3A and 3B show the target 1 of the embodiment A schematic diagram of the manufacturing method. Fig. 3A is a top view of a manufacturing apparatus of a target 1 to which the manufacturing method can be applied, and Fig. 3B is a front view of Fig. 3A. In addition, in FIGS. 3A and 3B, the shape of a part is simplified for convenience of explanation.

As shown in FIGS. 3A and 3B, the manufacturing apparatus 16 of the target 1 includes a wire 12 and a mounting table 13. The ceramic 11 is placed on the mounting table 13, and is conveyed at a predetermined speed by a transport mechanism or a transport jig (not shown), and is cut by a tangential line 12. Hereinafter, the conveying speed of the ceramic 11 is referred to as a cutting speed v _c .

The ceramic 11 has a rectangular parallelepiped shape having a height α, a length β, and a width γ. The ceramic 11 may be used as it is in the firing step obtained in the above-described firing step, or may be processed after one or two or more surfaces of the fired body. The surface of the fired body that is in contact with the mounting table 13 can be processed flat by cutting or grinding, for example, to correct the warpage of the fired body.

Further, the tangent 12 is wound around the drive pulley 15 and the plurality of guide pulleys 14. By the tangent line 12 of the rotation drive pulley 15 is set at a predetermined tangential rotational speed of the feed 12, will enter the cutting speed v _c of the ceramic 11 to be cut. Hereinafter, the feed speed of the tangent 12 is referred to as a tangent speed v _w .

Next, a method of supporting the ceramic 11 will be described. A finding that the tangential velocity v _c through the portion 12 of the ceramic 11, the tangent line 12 of the ceramic 11 so as to release the cut. Therefore, a gap corresponding to the width L of the tangent 12 is formed between the adjacent ceramics 11.

If the gap is applied from the surface direction, the deflection force set The portion of the tangent 12 that has not yet passed (using the portion of the tangent 12 cut) causes the microcrack to enter the cut. Therefore, when the cut surface is set to the sputtering surface 4, the amount of occurrence of the nodules in the sputtering is increased.

Therefore, as shown in Figs. 3A and 3B, when the ceramic 11 is cut by the tangential line 12 in a manner perpendicular to the horizontal direction, the ceramic 11 is not applied to the ceramic 11 in a direction perpendicular to the cutting direction. 11 self-reporting pressure. Therefore, it is possible to suppress the microcrack from entering the cut surface, and the use of the cut surface as the sputter surface can reduce the amount of occurrence of the nodules in the sputtering.

Here, the speed v _c of the ceramic 11 cut by the tangential line 12 is preferably 0.5 mm/min or more and 3.0 mm/min or less. If the cutting speed is less than 0.5 mm/min, the time required for processing is prolonged, and the production efficiency is remarkably lowered. Further, when the cutting speed v _c exceeds 3.0 mm/min, the impact when the ceramic grains 11 are peeled off by the abrasive grains is made strong, and the micro-cracks are easily entered into the cut surface.

Further, it is preferable that the tangent line 12 to be fed has a tangential speed v _w of 900 m/min or more. If the tangential speed v _{w is} less than 900 m/min, the surface roughness Ra of the cut surface tends to increase, and the occurrence of nodules in the sputtering tends to increase. The upper limit of the tangential speed v _w is determined according to the specifications of the device and the strength of the tangent 12 and the like.

Further, the tangential line 12 is preferably a wire saw having a fixed abrasive grain type in which abrasive grains such as diamonds having a width L of 0.25 mm or more and 0.32 mm or less are electrically attached. If the width L is less than 0.25 mm, the strength of the tangent 12 is insufficient, and the tangent 12 is liable to be interrupted in the processing. Further, when the width L exceeds 0.32 mm, the yield is lowered. For example, when you want to make a pre- When setting the size and quantity of the target 1, it is necessary to enlarge the specifications of the ceramic 11.

Further, in the above-described embodiment, the manufacturing apparatus 16 is provided with only one tangent 12, but two or more may be provided. In this case, the plurality of tangent lines 12 are arranged in parallel with each other.

Further, in the above-described embodiment, the manufacturing apparatus 16 is provided with the mounting table 13, but the mounting table 13 may not be provided. In this case, the ceramics 11 are supported by a support jig (not shown) or the like in the same posture as that of FIGS. 3A and 3B.

Further, in the above-described embodiment, the cutting of the ceramics 11 is performed by the movement of the ceramics 11 in the horizontal direction, but is not limited thereto. For example, it is also possible to cut the ceramic 11 by moving it up or down vertically.

Further, in the above embodiment, the cutting of the ceramic 11 is performed by the movement of the ceramic 11 itself, but it may be formed by cutting the tangent 12 with respect to the fixed ceramic 11, or may be ceramic. 11 and the tangent 12 are both moving.

Next, a method of manufacturing the target 1 of the embodiment will be described in detail using FIG. Fig. 4 is a flow chart showing the processing procedure of the target 1 of the manufacturing embodiment.

As shown in Fig. 4, first, the ceramic 11 is supported (step S11). The ceramic 11 is supported so as not to be pressed in a direction perpendicular to the cutting direction during the cutting of the ceramic 11.

Next, the width 11 of the tangent 12 and the cutting speed v _{c are} set to a predetermined range, and the ceramic 11 is cut (step S12). The processing for making the length and width of the ceramic 11 a predetermined size can be performed before or after cutting by the wire saw. Through the above steps, the manufacture of the target 1 of one of the embodiments is completed.

As described above, according to the method of manufacturing the target 1 of the embodiment, the surface roughness Ra of the sputtering surface 4 and the maximum depth of the crack 5 formed on the sputtering surface 4 can be controlled to a predetermined range. Therefore, it is possible to simultaneously suppress the generation of nodules in the sputtering and the adhesion of the particles to the sputter film.

[Examples]

[Example 1]

The ceramic 11 having a flat ITO (In ₂ O ₃ :SnO ₂ =9:1 (mass ratio)) having a height α of 500 mm, a length β of 300 mm, and a width γ of 32 mm is set as shown in FIG. 3A and FIG. 3B. . At this time, the portion cut by the tangential line is used to support the ceramic 11 so as not to apply pressure in a direction perpendicular to the cutting direction of the ceramic 11 during the cutting of the ceramic 11. The ceramics 11 were cut by arranging five tangent lines 12 in parallel at intervals of 5.3 mm to prepare six targets 1 having a thickness of 5 mm. The tangent 12 is a width L (the diameter of the abrasive grain + the tangent 12) after the electro-attached diamond is 0.25 mm. The tangential speed v _w was set to 900 m/min, and the cutting speed v _c was set to 2.0 mm/min.

Measuring the bending strength of the processed target 1, the surface roughness Ra of the cut surface (sputtering surface 4), and the maximum depth d _{max of the} crack 5, and then bonding the copper to the bottom plate 2 using the indium metal as the bonding material 3 A flat-shaped target having a cut surface 4 as a sputter surface is formed. Sputtering was performed using the flat target, and the degree of attachment to the tumor of the target 1 was evaluated. Further, the number of particles attached to the sputter film was counted.

In addition, sputtering is performed using DC magnetron sputtering. The conditions are as follows: back pressure: 7.0 × 10 ^-5 Pa, argon partial pressure: 4.0 × 10 ^-1 Pa, oxygen partial pressure: 4.0 × 10 ^-5 Pa, output: 300 W (1.6 W / cm 2 ), target size: outer diameter 203.2 mm × thickness 6 mm. In addition, a photograph of the surface of the target 1 after the sputtering was taken, and the area of the nodule was obtained from the image obtained by using the image analysis software (particle analysis Ver. 3, manufactured by Tiejinjin Technology Co., Ltd.). From the area of the obtained nodules, the ratio (%) of the area of the nodules to the surface area of the target 1 was determined to evaluate the amount of nodules produced. The evaluation criteria of the nodules are as follows: the ratio of the area occupied by the nodules to the area of the target 1 serving as the sputtering target is extremely small: 0 to less than 0.3%, less: 0.3 to less than 1.0%. Medium: 1.0 to less than 2.0%, more: 2.0% or more.

[Example 2]

The target 1 was produced in the same manner as in Example 1 except that the cutting speed v _c of the ceramic 11 was set to 3.0 mm/min, and the bending strength, the surface roughness Ra of the cut surface, and the maximum depth d of the crack 5 were measured. _Max . A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Example 3]

The target 1 was produced in the same manner as in Example 1 except that the cutting speed v _c of the ceramic 11 was set to 0.5 mm/min, and the bending strength, the surface roughness Ra of the cut surface, and the maximum depth d of the crack 5 were measured. _Max . A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Example 4]

The target 1 was produced in the same manner as in Example 1 except that γ was 32.5 mm, the width L of the tangent 12 was set to 0.32 mm, and the interval between the tangent lines 12 was 5.4 mm, and the bending strength and the cutting were measured. The surface roughness Ra of the surface and the maximum depth d _{max of the} crack 5. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Example 5]

A target 1 was produced in the same manner as in Example 1 except that IGZO (In ₂ O ₃ :Ga ₂ O ₃ :ZnO=1:1:2 (Morby)) was used as the ceramic 11, and the bending resistance was measured. The strength, the surface roughness Ra of the section and the maximum depth d _{max of the} crack 5. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Example 6]

The target 1 was produced in the same manner as in Example 1 except that AZO (ZnO: Al ₂ O ₃ = 98:2 (mass ratio)) was used as the ceramic 11, and the bending strength and the surface roughness of the cut surface were measured. Ra and the maximum depth d _{max of the} crack 5. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 1]

In addition to γ of 6.5 mm, the same ceramic 11 as used in Example 1 was placed in a plane grinder, and pulverization was performed so that γ became 5.0 mm to prepare the target 1, and the surface of the bending strength and the cut surface was measured. The roughness Ra and the maximum depth d _{max of the} crack 5 . In the grinding, a grinding stone having a grain size of #170 using a porcelain material as a binder was used, and the depth of cut at one time was set to 10 μm. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 2]

The same ceramics 11 as in Example 5 were placed in a plane grinder, and γ was set to 5.0 mm to prepare a target 1 to measure the bending strength and the surface roughness of the cut surface except that γ was 6.5 mm. Ra and the maximum depth d _{max of the} crack 5. In the grinding, a grinding stone having a grain size of #170 using a porcelain material as a binder was used, and the depth of cut at one time was set to 10 μm. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 3]

The same ceramics 11 as in Example 6 were placed in a plane grinder, and γ was set to 5.0 mm to prepare a target 1 to measure the bending strength and the surface roughness of the cut surface except that γ was 6.5 mm. Ra and the maximum depth d _{max of the} crack 5. In the grinding, a grinding stone having a grain size of #170 using a porcelain material as a binder was used, and the depth of cut at one time was set to 10 μm. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 4]

The target 1 was produced in the same manner as in Example 1 except that the cutting speed v _c of the ceramic 11 was set to 5.0 mm/min, and the bending strength, the surface roughness Ra of the cut surface, and the maximum depth d of the crack 5 were measured. _Max . A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 5]

The target 1 was produced in the same manner as in Example 1 except that the ceramic 11 was pressed and held in the thickness direction of the ceramic 11 so that the ceramic 11 was cut in the vertical direction with respect to the cutting direction of the ceramic 11. The bending strength, the surface roughness Ra of the cut surface, and the maximum depth d _{max of the} crack 5 are measured. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 6]

The same ceramics 11 as those used in Comparative Example 1 were placed in a plane grinder, and polishing was performed so that γ became 5.1 mm. In the grinding, a grinding stone having a grain size of #170 using a porcelain material as a binder was used, and the depth of cut at one time was set to 10 μm. Next, a grinding stone having a grain size of #1000 using a resinous material as a binder was used, and the depth of the cut was set to 2 μm at a time, and the γ was 5.0 mm to prepare the target 1, and the bending strength and the section were measured. The surface roughness Ra and the maximum depth d _{max of the} crack 5 . A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 7]

In the same manner as in Comparative Example 6, the same ceramics 11 as those used in Comparative Example 2 were polished to prepare a target 1, and the bending strength, the surface roughness Ra of the cut surface, and the maximum depth d _{max of the} crack 5 were measured. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 8]

In the same manner as in Comparative Example 6, the same ceramic 11 as that used in Comparative Example 3 was polished to prepare a target 1, and the bending strength, the surface roughness Ra of the cut surface, and the maximum depth d _{max of the} crack 5 were measured. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 9]

The target material 1 was produced by grinding in the same manner as in Comparative Example 1, except that the abrasive grain having the abrasive grain size of #80 as the binder was used as the bonding agent, and the bending strength, the surface roughness Ra of the cut surface, and the crack 5 were measured. The maximum depth d _max . A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 10]

In the same manner as in Comparative Example 9, the same ceramic 11 as that used in Comparative Example 2 was polished to prepare a target 1, and the bending strength, the surface roughness Ra of the cut surface, and the maximum depth d _{max of the} crack 5 were measured. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

[Comparative Example 11]

In the same manner as in Comparative Example 9, the same ceramic 11 as that used in Comparative Example 3 was polished to prepare a target 1, and the bending strength, the surface roughness Ra of the cut surface, and the maximum depth d _{max of the} crack 5 were measured. A flat target was produced in the same manner as in Example 1 using the target 1, and sputtering was carried out in the same manner as in Example 1 using the flat target. Next, the amount of the nodules attached to the target 1 was evaluated, and the number of particles attached to the sputtered film was counted.

Tables 1 to 3 show the results obtained according to Example 1 to Comparative Example 11. Further, ITO was used in the first table, IGZO was used in the second table, and AZO was used as the ceramic 11 in the third table.

Further, in each of the tables, the bending strength of the target 1 was measured by the average value of the four targets 1 except for the two ends of the six targets 1 cut by the tangent 12. Further, the surface roughness Ra of the cut surface and the maximum depth d _{max of the} crack 5 are the average values of the 10 face cuts formed by cutting. In the case of a flat target, two of the six targets 1 were used, and the number of the nodules and the particles was the average of the two flat targets. Further, in the comparative example in which the cutting by the grinding stone was performed instead of the cutting by the tangential line 12, four targets 1 and two flat targets were also produced, and the measurement results were average values.

Further effects and modifications can be easily derived by those having ordinary knowledge in the field of the invention. Therefore, the invention in its broader aspects is not intended to Therefore, various changes can be made without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (9)

a target material, wherein the sputtering surface to be sputtered has a surface roughness Ra of 0.5 μm or more and 1.5 μm or less, and a maximum depth of a crack formed in the sputtering surface is 15 μm or less. The plated surface is a cut surface formed directly by cutting the ceramic. The target material according to claim 1, wherein the ceramic has a bending strength of 16 kgf/mm ² or more. The target material according to claim 1, wherein the ceramic has a bending strength of 6 kgf/mm ² or more. The target material according to claim 1, wherein the ceramic has a bending strength of 15 kgf/mm ² or more. A method for producing a target, comprising: a support step supported by a method of applying a pressure in a direction perpendicular to a cutting direction of the ceramic in the cutting of the ceramic; and a use width of 0.25 mm or more and 0.32 mm or less In the tangential cutting, the ceramic is cut into a flat shape at a cutting speed of 0.5 mm/min or more and 3.0 mm/min or less, and the cut surface is set as a cutting step for the sputtered surface to be sputtered. The method for producing a target according to claim 5, wherein the tangential conveying speed is 900 m/min or more. The method for producing a target according to claim 5, wherein in the cutting step, the sputtering surface and the splashing are performed The opposite sides of the plated surface are cut in a substantially parallel manner. The method for producing a target according to claim 5, wherein in the cutting step, the ceramic is cut by a wire saw to which the tangent is attached. A flat-plate target comprising: a target material according to any one of claims 1 to 4; and a bottom plate joined to the target material through a bonding material.