TW200426238A - Sputtering target - Google Patents

Abstract

A sputtering target of the present invention is manufactured by a mechanical machining process, wherein this invention is characterized in that a micro-crack having a depth and a length above a given value is substantially diminished while inspecting a cross section of the sputter face of the target. As a result, this invention is capable of providing a sputtering target that efficiently reduces arcing, especially the arc generated at the beginning, and improves the stability during the initial stage dramatically.

Description

200426238 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a sputtering target used in sputtering and thin film formation. [Prior Art] One of the conventional thin film forming methods is known, such as a low-level plating method. The so-called money bond method generally means that under reduced pressure, an inert gas in a plasma state is impinged on a sputtering target (hereinafter referred to as a "target"). With this energy, molecules or atoms flying out of the target are attached to the target. The method of forming a thin film on a substrate is used in industry because it is easy to increase the area and obtain a high-performance film. In addition, in recent years, there have been known, for example, a reactive sputtering method in which sputtering is performed in a reactive gas, a magnetron sputtering method in which a magnetized thin film is formed on the back surface of a target to form a high speed, and the like. Among the thin films formed by such sputtering methods, an oxide (hereinafter referred to as “IT0”) film containing at least one of indium oxide (Ιη 20 3) or tin oxide (Sn02) as a main component is particularly visible because of visible light. It has high permeability and high electrical conductivity, so it is used as a transparent conductive film and widely used in liquid crystal display devices, glass anti-fog heating films, and infrared reflective films. The target for forming this type of I T0 film is like other oxide targets. After the raw material powder is formed, the target is made by sintering powder metallurgy (sintering method), and # 2 0 0 is used for the target. The front and rear sandpapers are surface-polished and shaped by other processing machines. However, if a sputtering target prepared in this manner is used to form a high-performance thin film, the following problems will occur. In other words, during the sputtering, an abnormal discharge (hereinafter referred to simply as "arcing") will occur particularly in the initial stage of sputtering.

314023D01.ptd Page 8 200426238 V. Description of the invention (2) ^-~ initial arc) 'will damage the film formation stability, and will also produce particles. The particles will adhere to and deposit on the sputtering target to form a black attachment called a "nodule". This attachment is one of the causes of the initial arc & will also induce the generation of new particles. In addition, if the particles adhere to the film, the film performance will deteriorate. "When using a new sputtering target, in order to avoid such problems, even if the new sputtering target is installed on the sputtering device, it is necessary to start from the beginning of the money mining to the point where no arc occurs. Idling can be performed within two days between product manufacturing, which hinders productivity improvement. It is known that the occurrence of such arcs or agglomerations is to grind the surface of the target. The smoother the surface, the more this phenomenon can be reduced, and the surface-polished targets that are flat-polished on the surface are by far the mainstream. For example, the I T0 sputtering target, which attempts to prevent arcing or agglomeration by setting the coarse chain degree of the dry surface within a predetermined range, is described in Japanese Patent No. 2 7 5 0 4 8 3 and No. 3 1 5 It is disclosed in 2 108 and the like. However, in order to achieve such a predetermined surface roughness, it is necessary to perform rough grinding using mechanical grinding after making a sputter coating, and then adjust the degree of corpse, and then fine grinding (grinding) must be performed in stages. Table +, smoothing, leading to increased manufacturing time and cost issues ~ ~. In addition, even with this set of surface roughness I TO 0, helmets, toasts ^ 1…, effectively prevent the initial arc, and will generate new sputter plating from full ^ f, It must take a long time to run dry. x t Furthermore, this type of problem uses powder metallurgy (Kishi, Shizoku Nitrogen, etc.) which is mainly composed of oxides, carbides, borides, etc. other than I T 0

314023D01.ptd Page 9 200426238 V. Description of the invention (3) method), and the ceramics produced by the present inventors have considered that + or metal targets will also exist. In the case of mechanical grinding steps, after in-depth study, it was found that there are some sputter targets on the surface of the target, such as grinding steps, that are separated from the surface due to the research, resulting in primary, powder, or sputtering. The reason for the thermal shock at the time, as long as it is removed, these are the main causes of arcing and agglomeration. In addition, according to the present invention 2, the initial arc can be prevented. As a result of a "research" due to thermal shock during sputtering, it was found that whether the above-mentioned parts would be detached from the surface due to the surface roughness and generate particles, it is more so that the target surface is finer than the interior. The existence of cracks caused by mechanical grinding is not caused by cracks. Moreover, it is found that there are reasons for the initial arc of all the subtle turtles to produce arcs and agglomerations, especially the main causes. The above-mentioned depth and length of micro cracks are effective to prevent the initial arcs. If there is a crack, there can be a reason. The second object of the present invention is to complete the present invention. The primary purpose of the sputtering process is to provide a sputtering support and replication stability that can prevent the productivity of the initial arc, and significantly improve the production of thin films. [Summary of the Invention] The sputtering target 4 of the present invention A sputter target produced by observing the mechanical polishing step of the sputtered surface of the target; and a fine crack of 40 m or more in length (at most: when the depth is substantially 15 / m or more). In addition, the depth of Λ is more than 10 m and the length is 30. The above-mentioned splash key is more than 5 / zm deep and low; and the length is 10 mm and less than 3 #. It is preferable that the number is 2.5 or less in the cross-section width direction on average.

IIHIIEM Page 10 314023D01.ptd 200426238 V. Description of the invention (4) Furthermore, the sputtering target of the present invention is preferably one of its mechanism, laser treatment, and dry etch treatment; In addition, the sputtering target of the present invention is preferably made of powder. For the composition, it is preferable to use target components of up to / 'j in indium oxide or tin oxide. /, One of the main types In the sputtering target of the present invention, the sputtering surface of the above target is 1.0 / z m or more. The rough surface roughness Ra of the forged surface is acceptable. [Embodiment] Hereinafter, the present invention will be specifically described. In relation to the sputtering target of the present invention, the first aspect and the second aspect can be manufactured by a mechanical grinding step. The whole thing belongs to the person who will do the haikuming invention. The money and minerals only need to belong to the person who has undergone the mechanical grinding step. The target used in the present invention is not specially studied. Two: In order to use oxides, lice compounds, Carbides, borides = systems, or metals. Such dry materials ^ become ^ InW or Sn〇2 at least one of the jl, and Lv 'can be exemplified by at least one of the or ZηΟ Α φ Λ eight recognition CIT0), Ιη2〇3 sn 〇2, ζη〇, α12〇), ζη〇-Αΐ2〇3, ιη2〇ΑΙΝ ^ SiC ^ Μο ^ W; r \ 〇2 'Τ; 2 ° 5' Mg〇 'Ni〇' Si3N, etc., _Plating dry cause ~ Α! And so on. This requires a high initial stability because the n-ratio: performs sputtering 'and is particularly effective for this. The brother of the moon is sad and the second aspect. Furthermore, the above-mentioned work is made according to the predetermined blending ratio and the limit of & special =, such as ’, + 如 如’ or according to the co-precipitation method.

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Page 11 200426238 V. Description of the invention (5) For the raw material powder of the homogeneous mixture obtained, as for the ceramic system, it can be formed by using various well-known dry or wet methods, and after sintering, It is produced by sintering method (powder metallurgy method) by mechanical grinding; if the metal is dried, then it can be melted after vacuum melting, plasticized and then processed by mechanical grinding, vacuum dissolving method, IP (thermal) Powder metallurgy after sintering and plastic working after forming by compressive sintering) method or CI P (cold equalizing sintering) method. Examples of the dry method include a CP (cold pressing) method, a HP (hot pressing) method, and a HIP (hot equalizing sintering) method. "The method is to fill the molding die with the raw material powder of Langhe into a forming mold, and then fire it (sintering) in the atmosphere or oxygen environment. The HP method is to fill the mixed raw material powder into an electric furnace. In the internal molding die, heating and pressing are performed at the same time to perform molding and sintering. Η The IP law uses mixed raw material powders or preforms to be formed in a bag such as rubber or a metal foil that will still form a coating even at high temperatures After being sealed and degassed, it is inserted into a container, and heated and sintered while applying isotropic pressure through a simple active ambient gas medium. The wet method is as described in Japanese Patent Application Laid-open No. 1 28 28 0 0 2 The filter forming method described in the publication. This filter forming method is to obtain a formed body by depressurizing and removing moisture from a ceramic raw material slurry, and a filter forming mold made of a water-insoluble material is used here. In the molding die, a slurry composed of the mixed raw material powder, ion-exchanged water, and an organic additive is injected, and the water in the slurry is removed under reduced pressure to produce a molded body. After this molded body was degreased and dried into, and then sintered. Further, in the above process, the sintering temperature is preferably used with

314023D01.ptd Page 12 200426238 V. Description of the invention (6) An appropriate temperature set for the raw materials. = As mentioned above, after the raw materials are in the mold, the dry material is processed into Jj ,: to form a smooth one, and mechanical polishing such as plane grinding is performed. In other words, J means that the target to be plated is prepared at least through a mechanical grinding step. "Er ... In this way, there may be the initial powder particles caused by the grinding step in the tonway through the mechanical grinding step, as shown in Table 3. Blind 敏 Xu Min Er Su Xing, or the impact of the time from the surface layer When detached and ^ h sputtered, it will be attached to the part of the 私 μ ^ ^ war particles. This hope sign "耆" on the substrate will cause a thin 臈 defect, in addition, the affiliate, / child accumulates on the target and will Black clumps and arcs are caused by agglomeration, and it can be determined that new powder particles will be generated. Therefore, in the present invention t, for the ore-splashing ore surface through the machine, a pound system as described below is performed individually or in accordance with the thermal shock at the time of ore reduction: to: reduce the efficiency of the initial arc. Illusion. Positioning, < First Aspect of the Present Invention > First, the first aspect of the present invention will be described. The sputtering target according to the first aspect of the present invention is that after the sputtering target is manufactured according to the grinding step described above, or after the manufacturing process is processed, the fine cracks are substantially eliminated. The mechanical polishing described below is a technology that grinds the workpiece by cutting with a high-speed rotating abrasive tool. Therefore, it follows the sanding ^ = blade force on a dry surface (particularly a surface for sputtering, hereinafter referred to as ", 妾 面"), and cracks in its interior. This cracked target μ τ can be sputtered from the shoulder surface. The sputtered particles are contacted at this mechanically-made place where they are called again.

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200426238 V. Description of the invention (7) Although the observed cracks are considered to be abrasive damage or processing defects, so far, no discussion has been made of the fine cracks extending from the sputtered surface toward the inside. Although the degree of generation of the fine cracks in the shape (depth and length, etc.) or the number is different, as long as it is unavoidable through the mechanical grinding step, the degree of the crack will be affected by the mechanical grinding step. Influence of grinding tool load, speed, frosted shape, material of workpiece, etc. In the first aspect of the present invention, focusing on this slight crack, it is possible to provide a target that can substantially eliminate minute cracks having a depth and a length of a specific value or more, and effectively prevent the occurrence of an initial arc. In other words, as mentioned above, the existence of all microcracks is not the cause of the initial arc, but the existence of microcracks with depth and length above a certain value is the cause of the initial arc. When the sputtered surface of the target is observed in a section, by effectively eliminating such specific fine cracks, the initial arc can be effectively prevented. Specifically, the sputtering target of the first aspect of the present invention is a sputtering target prepared through a mechanical polishing step. When the sputtering surface of the target is observed in a cross section, the loss depth is substantially eliminated 1 5 // Min cracks of m or more and a length of 40 // m or more (preferably a depth of 10 // m or more and a length of 30 // m or more). The term "substantially eliminating microcracks" herein means that the target is subjected to a microcrack removal treatment. When the sputtering surface of the target is observed in a cross section, no microcracks having a depth and a length above the specified value are found. Specifically, it means that when the sputtering surface of the target is observed in a cross section, a depth of 1 5 # m or more is not found within a width of 2.5 mm in the width direction.

314023D01.ptd Page 14 200426238 V. Description of the invention (8) Fine cracks with a length of 40 // m or more (preferably a depth of 10 # m or more and a length of 30 / z m or more). This is even if there is a slight crack with a depth and a length lower than the above values. In this case, the slight crack itself will not cause the formation of an arc, and it will not cause cutting with the thermal shock during sputtering. Injury and produce a source of powder particles. More specifically, when the sputtered surface of the sputtering target is observed in a section, 'the slight cracks having a depth and a length greater than the specified value are not found', or even a depth of 5 // m or more and less than 10 / / m, and the number of fine cracks with a length of 10 // m or more and less than 30 / zm, the average length of the cross section in the width direction is 2.5 mm, preferably 5 or less, especially 3 or less It is more preferable to be less than one. Of course 'when looking at the sputtering surface of the target in the cross section, we did not find a depth of 5 // m or more and less than 1 〇 " m, and a length of 丨 m or more and less than 3〇 "_ slight cracks, in other words The number of the fine cracks is preferably in the width direction of the cross section, and the average length of 2.5 mm is 0. However, if the number of cracks is 5 or less (preferably 3 or less, especially less than or equal to 5) It is possible to effectively reduce the initial arc without hindering the sputtering. Here, the means for observing the cross section of the dry-sputtered surface, specifically, using an optical microscope, an electron microscope, or a scanning electron microscope ( g Ε μ), etc. However, the dry sputtered surface is the same as mentioned above, and usually has fine unevenness because of the mechanical grinding step, and what kind of setting of the depth and length of the fine crack will cause problems. ... so, in this description, related

314023D01.ptd Page 15 200426238 V. Description of the invention (9) The definition of the depth and length of the fine cracks is as follows according to the first figure ... In the present specification, 'the depth of the microcrack is as shown in Fig. 1. In the section 3 in the thickness direction of the target, the sputtering surface 1 corresponding to the area where the microcrack 5 exists is formed with the cross section 3'. The height of the highest ridge of the mountain rises 1 place to the deepest point of the slight crack 5 and is called the depth D. Furthermore, in this specification, the term "fine crack length" refers to the maximum distance l of the fine crack 5 in the horizontal direction in the cross section 3 as shown in Fig. I. In addition, the sputtering target of the first aspect of the present invention is only required to have substantially eliminated the minute tortoise W having a depth and a length of a specific value or more. The surface roughness (the average number of noses of the coarse sugar curve of the crude sugar surface) r & (measured according to: [1360 6 0 1 (1 9 94)) can be more than 1.0 // 111, It can also be more than \ 5 // m, or more than 2.0 0 // m.

Therefore, in the sputter target of the first aspect of the present invention, in order to reduce the surface roughness as conventionally performed, since the target surface does not need to be polished to be smooth, such a polishing step can be omitted and production can be simplified. Steps, ^ improve productivity. W Furthermore, even when Ra is less than 1.0, it is of course still suitable for the present invention. W ^ In obtaining the first aspect of the sputtering target of the present invention (in other words, the subtle cracks having a depth and a length of a certain value or more have been substantially eliminated, and the subtle cracks must be removed until no silver is emitted. 1 L-face 'is a method for virtually eliminating such fine cracks as described above (where the fine cracks are removed

314023D01.ptd Page 16 200426238 V. Description of the Invention (10) Principle), it is only necessary to substantially eliminate the above-mentioned subtle ways. For example, for example, if the lean surface of the target is slanted 1 °, you can use any abrasive tool load, or precision such as the rotation speed $ = to control the research, dry finish processing, sandblasting, etc. The laser and laser parts are preferably splashed among them. As far as the dry production is concerned, the ore treatment, the laser treatment, and the dry-cutting treatment. The following is a detailed description of the method of removing the fine cracks and the sputter plating process as an example = performing a treatment on the dry machine-plated surface that substantially eliminates the above-mentioned fine cracks / ^ treatment), which is a sputtering process In the case, the method (removal of gas and gas pressure with slight cracks is not particularly limited). The base forging method and sputtering are appropriately selected. For example, the sputtering gas can be matched with: y, and oxygen can be used if necessary. It is best to put the gas two = 2, the inert gas such as argon, and the integral input during the sputtering to 210mTorr. The total power per unit area of the average target input I c :) (that is, the "excitation plating lOWh" / cm2, especially in the range of 0.5 to 5 Wh / cm. Take 卞 .0.1 to # of the X power within the above range, except for the subtlety: the fissure disappears. Dry manufacturing needs: two costs are more advantageous in terms of productivity and so on. Specifically, for example, in the _controller plating method, a target made by mechanical grinding steps is also provided (also For bonding to the base plate), and then using the above-mentioned sputtering Body, until the integral of the amount of power input are performed until the sputtering process, can be obtained according to the present invention can kind of sputtering target. ~

314023D01.ptd Page 17 200426238 V. Description of the invention (11) ~ ^ The slight cracks in the depth and length of the target obtained when the sputtering surface is observed on the section have virtually disappeared. F has a specific value. If the target is sputter-formed to form a thin film, it will have 'if it is produced by using this, it will have superior initial arc characteristics. * Preventing the initial arc The primary device of the sputtering target of the first aspect of the present invention uses an A-arc monitor (manufactured by MAM Genes (company name, transliteration)), and you ^ Eighth now Mark Technology Corporation performs thin film formation In this case, the number can be evaluated by analyzing the number of base bonds related to the target that has been subjected to the above-mentioned treatment. The first aspect of the present invention is less and the initial arc characteristics are less than two = the number of accumulated arcs of the input power is greater than < the second aspect of the present invention > Secondly, the second aspect of the present invention is directed to the second aspect of the present invention. Two examples will be explained. Before being shipped from the sputtering target manufacturer, X Huan Department performed mechanical grinding on the dry material before processing. The sputtering place has been previously applied to the sputtered surface as described above, and the sputter-dried coating produced by the initial arc grinding and grinding steps can be said to be due to the thermal shock during mechanical research, which makes it easier to strip the plated surface. On the surface, there are powder particles, or with sputtering, if possible, through the part. In the case where the fine powder or the plating surface of the base plate of the base plate itself is sputter-treated, it is easy to generate an out-of-phase arc from the thermal shock during the plating from the sputter surface. With the removal of the tongue, the initial value can be effectively reduced. In addition, even if

Page 18 200426238

V. Description of the invention (12) It can be considered that the detachment caused by the impact will depend on the surface of the left target to the internal cracks, and the depth and length of the feature will be above the specific value of the shape with mechanical grinding; f, has As in the present invention, the first kappa is slightly cracked. Therefore, in the second aspect of the present invention, the ore-spattering surface is pre-plated, while the second and the ff of the present invention are formed by the depth and the length of the ore-spattering surface, which will form Special target. But when not asked? The situation of this kind of performance that will be eliminated by ~ Guan Bei will be here. The old 'whatever is not necessarily limited in other words' In the present invention-Yuediyi's sadness, you can see the sputter treatment on the sputtered surface of Λα, Λ α, and add the yoke to the bullseye. Integrate the amount of power input, 0 · 0 0 5Wh / cm ^, especially ιν + Λ λ For thousands of miles, it is better to be on KOlWh / cmix, and it is better to prepare on 02Wh / cm ^ ， 4 士 _ ^ ^ Gong Qiaojia even lives in 〇, especially with 0.1 lWh / cm slave as # lL The so-called integral input power ffww 2.r. Here CWh / cm2) means right The target surface is pre-sputtered before shipment. If the integrated power input in the average early-stage area is above the 0.05.05 Wh / cm slave, the target that performs the sputtering process will have better initial arc characteristics and can effectively prevent it. The initial arc is generated, so there is virtually no need for idling operation on the surface of the sputtering target. The sputtering target can be directly used for the sputtering process for film forming, and the production of the film can be improved and executed efficiently. Film formation. In addition, there are no particular restrictions on the sputtering conditions in which the sputtering process is performed in advance, and it is sufficient if the above-mentioned sputtering process is performed under normal conditions until the power input amount reaches ^ minutes. Product

314023D01.ptd Page 19 5. Description of the Invention (13) Furthermore, the present invention is #-#

If I ϋ π ΛΑ, there is no special restriction on the point investment. From the viewpoint of the productivity required for the manufacture of Jingyou sputtering targets, it is best to use lOWh / cm ^ ^ stated that the initial arc characteristics were measured using the arc + \ 5 when p is used until the arc is generated, the interval is i, and the power is input (wh / cm2). (Morse name, transliteration): Integral is sensed until the initial arc of the 1 P 6-inch target is condensed (ie, the electricity generation interval is more than 10 seconds 1 L, rabbit arc + #eight, more than seconds) Input: The smaller the value of the input power of the Γ f product knife, the better the initial arc characteristics of the electric target. / Furthermore, in the second aspect of the present invention, for the sputtering process, it is often set to a degree greater than the sputter target of the first aspect of the first aspect immediately after the mechanical grinding is completed. Ra can also be set to large // m. In addition, even if the target is as low as 0.5 // melon, it is applicable to the second embodiment of the present invention. In addition, the so-called surface roughness B 0 6 0 1 (19 94) in the present specification, and more specifically, the measured roughness curve, if the second aspect of the present invention is continuously sputtered, there will be no Regarding the initial value and considering the productivity of the sputtering process, in the range of 1 to 5 · 0 # m from sputtering, it can also be set to 〇 · 丨 to 3. The upper limit of the amount of input power. Time and cost Faces give birth. The 6-inch target is estimated to be sputtered for more than 10 seconds. Specifically, when the counter (Landmark t arc, and the power rate between the next arc and the next arc is used to evaluate. The less the number of arcs generated, the lower the surface roughness of the sputtering target before the sputtering target. Therefore, in the case of the better known 0.5, the degree of Ra is the average roughness according to the JIS arithmetic. If the Ra value of the mine is continued to be approximately constant, the Ra value can be set. Within the range of 0.0 // m.

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200426238 V. Description of the invention (14) Furthermore, after the sputtering target of the second aspect of the present invention is subjected to sputtering treatment on the sputtering surface, it is better to attach a surface protection film on the sputtering surface. By attaching this protective film to the sputtering surface, it is possible to prevent impurities from adhering and gas to be adsorbed on the sputtering surface. The above surface protection film is to prevent impurities from adhering and gas to be adsorbed on the sputtered surface, and it is only necessary to adhere to the sputtered surface, or the entire target may be attached. The method of attaching the surface protection film may be, for example, a method of closely adhering a resin film to a sputtering surface, or a method of vacuum-packing the entire target by using a resin film. Among them, vacuum packaging is a preferred method because it is difficult for air bubbles to remain between the film and the target. The resin film used as the surface protection film is not particularly limited, but in order to prevent the particles from being transferred onto the target surface, it is preferable to use a resin film that does not contain release particles. Next, a method for manufacturing a sputtering target according to a second aspect of the present invention will be described. The manufacturing method of the second aspect of the sputtering target of the present invention is to mechanically polish the surface of the target (preferably a target prepared by a sintering method), and secondly, to perform at least the sputtering surface of the target before shipment Sputtering. Furthermore, when the sputtering target of the second aspect of the present invention belongs to the I T0 sputtering target, the manufacturing method of the I T0 sputtering target is sintering a raw material mainly composed of indium oxide and tin oxide. The I T0 dry surface obtained by the treatment is mechanically polished, and then at least the sputtering surface of the sputtering target is subjected to a sputtering treatment before shipment. In the method for manufacturing a sputtering target according to the second aspect of the present invention, in addition to performing a sputtering process on the sputtering surface of the sputtering target, the manufacturing method of a general sputtering target can be used.

314023D01.ptd Page 21 200426238 Empty for grinding. By using the target in the mold to carry out a conventional welding method, the use of the watch or the grinding sputtering target is manufactured after shipment. In addition to grinding powder, the processed surface of the material formed by the sintering method is ground to the bottom plate, and a fine-grained glass (hereinafter, V. Description of Invention (15)) method is applied to the working surface. In other words, as in the above-mentioned refining method The raw materials are made of materials. Then, in order to make the surface smooth, usually after mechanical grinding, the above-mentioned mechanical grinding, one-side turning grinding, sand blasting and other grinding, in order to adjust the thickness, the surface is smooth, and the stage (hereinafter also referred to as " "Grinding"), and "grinding" by blasting the projection material). After the surface of the second aspect of the present invention is mechanically polished, the surface is further subjected to a sputtering treatment, and the polishing may be performed, or it may be implemented only after the bottom plate is refined. With this method, at least the burr produced by the target grinding or the place easily detached is removed by arc 0 (powder metallurgy method), 4 $, and then sintered or cast into a predetermined mechanical grinding such as ^. In addition, it was sputter-dried. Appropriately adopt surface grinding for rough grinding of the above-mentioned forming process, and then use fine grinding beads, inscription beads, and wrong beads as combined manufacturing methods to make surface sand. Sputter the target at least for this purpose. This sputtering process can be performed after rough, sandblasted grinding, or welding to the surface, and spattering treatment, which can reduce the initial electricity effectively with the thermal shock during sputtering or even if it is not It is advantageous to perform surface roughening suppression on the surface, so that 'mirror-like smooth polishing is performed according to the second aspect of the present invention, even if no action is performed.

314023D01.ptd Page 22 200426238 V. Description of the invention (16) With a finer particle size blasting treatment, it is also possible to obtain a target that reduces the initial arc and can effectively perform sputtering. In other words, when the step of the second aspect of the present invention is adopted, a sputtering target can be formed by performing a Tibetan-plating treatment on the surface of the i target. -[Effect of the invention] According to the first aspect, it can effectively reduce the generation of arcs caused by the micro-cracks generated during mechanical grinding, and it is particularly effective to reduce the Arctic arc ', which can significantly improve the initial stability. In addition, since the grinding step can be omitted, the production steps can be simplified and the productivity of the target can be improved. Furthermore, according to the second aspect of the present invention, it is possible to obtain a sputtering target that effectively reduces the initial stability of the initial arc. By using this sputtering target to perform a base plating process', it is possible to efficiently improve productivity and form a high-performance thin film. In addition, since the polishing step can be omitted, the polishing step can be simplified and the cost can be reduced. Hereinafter, the present invention will be described in more detail based on examples. The invention is not limited to these embodiments. Examples and comparisons of the first embodiment of the present invention. The description is as follows: A1 <manufacturing of a target> _ The targets used in Examples A1 to 3 and Comparative Example A1 were made loosely. According to the following, the ratio of Ιη20 powder and SnO powder according to ln 20 3: sn〇 dead 90: 10 quality fan 0 / „, li /.

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I T0 sintered body of this target material to form the target material. 5. Description of the invention (17) Rows are mixed, and the relative density is 99.7% according to the conventional method. 2 ~ ——mm is cut into 8 pieces, and these are placed on a flat grinding disc, the surface of the spear is straightened, and the thickness is 6 ;, = To a8 〇υ · a Example A1 &lt; Minor crack removal treatment &gt; • The targets No. a1 and a2 obtained in the above-mentioned manufacturing example A1 were respectively welded to a copper plate and then mounted on Sputtering device (EX-301 3M, manufactured by Vacuum Instrument Industry A1), and then perform the following steps to remove the fine sputtering treatment. ^ (Base condition) Sputtering method: DC magnetron sputtering process gas: Ar Process pressure: 3mTorr Oxygen partial pressure · 0. 02mTorr Input power: 3W / cm2 Integral input power: 10Wh / cm2 The surface roughness of the dry N 0 · a 1 and a 2 sputtered surfaces before and after the plating process is in accordance with JISB 0 6 0 1 (1 994) and the surface roughness meter is manufactured by SE 1 70 0 C Kosaka Institute), The measurement was performed according to the conditions of a stylus radius: 2 // m, a feeding speed of 0.5 mm / sec, a cutoff: λ c 0.8 mm, and an evaluation length: 4 mm. The results are shown in Table 1. &lt; Sectional observation of target &gt;

314023D01.ptd Page 24 200426238 V. Description of the invention (18) Using a grinding disc (manufactured by Okamoto Work Machinery Co., Ltd.), Litian ™ cp 2 π rx 1mm diamond # 180 cutting knife, which has been used sincerely m 3mm The target No. al was cut in the thickness direction. Secondly, use a grinding disc (# 60 0 diamond wheel made by Okamoto Work Machinery Co., Ltd., 205mm x thickness 10mm, to grind the cut name of the target Ί m φ ~ υ · ai 丨. J d surface is next, using Single-side polishing machine (manufactured by Super Peter Fam Company), using the free matte GC # 1 0 0 0, to polish the above-mentioned sound profile. Second, cut by 0 · al, and use single-side polishing. Rinko Kogyo (produced by Supeterfamm Co., Ltd.) 'Using a diamond matte with an average particle size of 0.1 # m, the polished section of the 1 tone N 0 · a 1 is polished. The target is described above. The cut section of the target No. a 1 was made using an optical microscope [manufactured by the scientific company (company name, transliteration), BX50_33P (observed with a light beam, and the results are shown in Table 1.)] into the initial stage Evaluation of arc characteristics &gt; ^ _ ί Ϊ No.al, the miner is treated as a subtle turtle $ i divided by ^ N 〇.a2, installed in a money killing device (ex_3013mw to ^ ^ ^ s.… For the formation of a thin film under the following conditions: (eight 'MAM Genesis) (Landmark. Φ ^ Division name Transliteration) manufactured by yield) of the table occurred (^ sputtering article Mou left foot) is sensed the sputtering, money cheap way: DC magnetron sputtering

314023D01.ptd Page 25 200426238 V. Description of the invention (19) Process gas: Ar Process pressure: 3mTorr Oxygen partial pressure: 0.02mTorr Input power: 3W / cm2 Integral input power: 5Wh / cm2 (// arc monitor sense Measurement conditions) Sensing mode: Energy arc sensing voltage: 1 0 0 V Large-medium energy boundary · 50mJ Minimum time of hard arc: 1 0 0 // s Example A2 In addition to using target No. a3 and a4 instead of target No. a 1 and a 2, and the integral input power amount in the sputtering process conditions performed by the micro crack removal process was changed from 10 Wh / cm to 6 Wh / cm, and the other embodiments were the same as in Example A 1. The results are shown in Table 1. Example A3 In addition to replacing the target N 0. a 5 and a 6 with N 0 a 1 and a 2, the integrated input power amount in the sputtering process conditions performed by the fine crack removal process was changed from 10 Wh / cm to Except for 3 Wh / cm, the other embodiments are the same as in Example A1. The results are shown in Table 1. Comparative Example A 1 is the same as Example A 1 except that dry N 0. a 7 and a 8 were used instead of N 0. a 1 and a 2 and a fine crack removal process was not performed. The results are shown in Table 1.

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Table 1% No. Minor number of cracks (sputtering (surface roughness Ra (β m) removed by cracks) spatter (surface roughness Ra (β m) removed by cracks) number of occurrences (times) L ^ 40 L ^ 30 L ^ IO Example A1 al 0 0 0 1.1 Example 1.3 Surface a2---1.2 1.2 1 Example A2 -S3 0 0 1 U 1.1 Surface a4---1.0 1.2 2 Example A3 a5 0 0 3 U 1.1 a6-•-1.0 1.1 7 Comparative Example A1 — 5 8 10 1.1 Interpretation a8---1.2-21 * ...... · D-system fine crack depth (# m) [System fine crack length (&Quot; m) Next, an example of the second embodiment of the present invention is described as follows

Example H: A mixture of Ιη20 powder and SnO powder was prepared according to a ratio of ln 20 3: SnO2 = 90: 10% by mass', and an IT0 sintered body was produced according to a conventional method to form a target material. ^ This dried material was cut into 9 6 leaves. After that, the surface to be subjected to the sputtering process (the sputtered surface) and the surface to be welded (the welded surface) are subjected to double-side polishing using a flat polishing disc, and the thickness is adjusted to 5 μm. Next, the sputtered surface was polished with a diamond abrasive tool with a different number of 31 to obtain Nos. Bl to b4. In addition, instead of performing diamond grinding on the surface of the coin key, blasting% abrasion was used for the projection material of aluminate to obtain Geba N 0 · b 5.

Page 27 314023D01.ptd 200426238 V. Description of the invention (21) on the sputtering device (sputtering conditions: for You Hai and other 鞑 welding on a copper base plate, and then dream of the car sputtering device, * a Dan Apply the sputtering process on the woman's hand and apply the following conditions: DC magnetron sputtering process gas treatment pressure

Ar 3raTorr gas partial pressure: 0.03mTorr, input power: 1.64W / cm2 At the time of this plating process, the electric isolation counter is ⑽Genesis) (Landmark Technology Co., Ltd. (company name, audio-electric pen arc ^ visual benefit system), And set the measurement conditions as: sensing mode, electricity, production = = 50mJ, minimum time of hard arc: β S Performs arc sensing, and when the arc is taken off by A at the beginning of the measurement (the arc interval is 10) After the integrated input power is up to bran, the sputtering process is continued until the integrated input power amount is 0.1 Wh / M ... The results are shown in Table 2. 'Targets for this base plating process The surface roughness of the sputtered surface was measured according to JISB 0 60 0 1 d 9 94), and the results are shown in Table 2. Table ^ The roughness meter is SE 1 70 0 (manufactured by Kosaka Research Institute), The measurement was performed under the conditions of a stylus radius: 2 // m, a feed speed: 0.5 mm / sec, a cutoff: λ c 0.8 mm, and an evaluation length: 4 mm.

314023D01.ptd Page 28 200426238 V. Description of the invention (22) Table 2 No. Density (%) Density (g / cm3) Sweet grade Ra (&quot; _- Integral input power (Wh / on2) "Arc generation Times (times) * 2 bl 99.1 7.09 0.35 0.0100 26Ϊ b2 99.5 7.12 138 0.0120 ΊΤΪ9 b3 99.1 7.09 1.01 0.0073 ^ 740 'b4 99.3 7.10 0.79 0.0091 b5 99.6 7.13 2.47 0.0064 &quot; * 1 ··· The interval at which the arc occurs is 1 0 The amount of integrated input power at the time of 2 seconds or more * 2 ··· The number of arc generations at the time when the arc generation interval is 10 seconds or more Example B2 The sample used in Example B1 was stripped from the manual sputtering device and vacuum was applied. Pack and let stand for 1 day. Then, take the sample out of the vacuum package and install it on the above-mentioned hand-made sputtering device. According to the base plating conditions of Example M and the integral input power of Example B1, perform base processing. Until it becomes 5Wh / cm2. In addition, as in Example B1, the surface roughness Ra before the measurement was measured. The results are shown in Table 3. / X Table 3 Sample No. Integral input power amount ( Wh / cm2)

314023D01.ptd 200426238 V. invention is described in (23) * 1 ··· As electrically integrated time interval less than 1 billion second isolated input power amount * arc generated when the electric arc is generated as at least 10 seconds interval 2 ????? The number of occurrences is shown in Table 3. 'People who have performed a low-level plating process will be faster on the arc beam just after sputtering.' The number of arcs is also reduced, which has superior initial arc characteristics. Example B 3 After the sample used in Example B2 was stripped from the hand-made sputtering device, it was installed again. I used the same sputtering conditions as in Example B1, and matched the points of Example B 1 and Example B 2 The amount of power was applied and a sputtering process was performed until it became 6 W h / cm 2. As a result, no electric arc with an arc interval of less than 10 seconds was generated in any of the female trunks. In addition, as in Example B1, the measurement of the surface roughness Ra before the sputtering process was performed. The results are shown in Table 4. Table No. 4 Sample No. Integral input power amount (Wh / cm2) Surface fiber before fiber treatment Record Ra (thin) product &gt; Input eight power amount (Wh / cm2) "Number of arc generation (times) 12 bl 5.0 ΣοΓ 0 ~ ~ \ ^ &gt; 7 ^ 〇b2 5.0 1.74 0 V / 〇b3 5.0 223 0 'yj 〇 5.0 5.0 2.92 0 \ J 〇b5 5.0 236 0 ~' \ J 0 1 points or more for 0 seconds Number of arcs when power is above 10 seconds

1 1 ··· The interval at which the arc is generated is the amount * 2 ··· The interval at which the arc is generated is [industrial availability] 200426238 V. Description of the invention (24) The sputtering target of the present invention can effectively reduce the initial arc The production is therefore quite suitable as a target for sputtering and thin film formation. ιϋΐι 314023D01.ptd Page 31 200426238 Brief description of the drawing [Simplified illustration of the drawing] Fig. 1 is a schematic diagram illustrating an example of a slight crack observed when the sputtering surface of the target is observed in cross section. (Explanation of component symbols 1 sputtered surface 3 cross section 5 slight crack

314023D01.ptd Page 32

Claims (1)

200426238 6. Scope of patent application1. A sputtering target is a sputtering target prepared through a mechanical grinding step. In order to effectively prevent the generation of an initial arc, any method can be used to remove microcracks. Until the cross-section of the ^^ sputtered surface was observed, it was not possible to find minute cracks with a depth of 15 // m or more and a length of 40 // m or more. 2 · If the sputtering target of item 1 of the scope of the patent application, in order to effectively prevent the occurrence of the initial arc, use any method that can remove fine cracks to perform the fine crack removal treatment until the target sputtering is observed. In the cross-section of the surface, it was not possible to find minute cracks with a depth of 10 mm or more and a length of 30 mm or more. 3. For the sputter target of item 2 in the scope of patent application, in which the cross section of the plating surface has a depth of m or more and less than // m or more and less than 3 0 // claws in the direction of the number of fine cracks every 2.5 mm Under five. 'When observing the target's sputter 10 # m, and the length 10, it is in the cross-section width 4. If the scope of the patent application is the sputter target of the sputtering target, dry etching at the above 1 to 3 Any one of the surfaces is subjected to the removal process of precision grinding, polishing and sandblasting. Sputtering targets, among which, sputtering treatment, 'laser type', are used as the target of 5. ° spraying target as in any one of the scope of application patent No. 丨 to 3 is a target made by powder metallurgy method Among the materials broadcast, the saki is based on oxidative marriage or oxygen. 'One of them is mainly 7. If the money reduction of any one of the scope of the patent application is done, 314023D01.ptd Page 33 200426238 VI. Scope of patent application The rough chain degree of the surface of the clock face with a thick key R a is 1. 0 // m or more. 1IB1I 314023D01.ptd Page 34