TWI745483B - Divided sputtering target - Google Patents

Abstract

A divided sputtering target (1) according to one aspect of the embodiment is a divided sputtering target (1) formed by bonding a plurality of target materials (10) to a substrate (20), wherein among a dividing part (40) formed by arranging the plurality of target materials (10) spaced apart at an interval, flat surfaces (12) are respectively formed in at least a part of side surfaces (11) of a pair of target materials (10) arranged in at least a part of the dividing part (40), and as for the interval between the flat surfaces (12) facing each other in the dividing part (40), the interval (Lt) of the portion farthest to the substrate (20) is larger than the interval (Lb) of the portion closest to the substrate (20), and the surface roughness Ra of the flat surface (12) is 0.3μm or less.

Description

Split sputtering target

The embodiment of the present disclosure relates to a split sputtering target.

Conventionally, there has been known a split sputtering target formed by bonding a plurality of target materials arranged in a plane to a base material using a bonding material (see, for example, Patent Document 1).

(Prior technical literature) (Patent Document)

Patent Document 1: Japanese Patent Application Publication No. 2004-315931

However, in the conventional split sputtering target, the bonding material easily adheres to the side surface of the target in the split portion formed by arranging a plurality of targets at intervals. Therefore, when the bonding material adheres to the side surface of the target material, metal particles may be generated during sputtering film formation.

On the other hand, the space between the side surfaces of the opposing targets in the divided portion is narrow, and the side surfaces of the target materials stand perpendicularly from the base material. Therefore, it is difficult to recognize the side surfaces from above. Therefore, it is difficult to confirm the adhesion state of the bonding material to the side surface of the target material. Furthermore, since the bonding material firmly attached to the side surface of the target cannot be easily removed, there is a possibility that metal particles may be generated during film formation due to the bonding material attached to the side surface.

One aspect of the embodiment was developed in view of the above-mentioned problems, and its purpose is to provide a split sputtering target that can easily confirm the adhesion of the bonding material to the side surface of the target facing the split part. The state, and the bonding material adhering to the side surface of the target material facing the divided part can be easily removed.

The divided sputtering target of one aspect of the embodiment is formed by joining a plurality of targets to a base material. In the divided sputtering target: a divided sputtering target formed by arranging a plurality of targets at intervals In the section, at least a portion of the side surfaces of the pair of the target materials arranged in at least a portion of the divided section are respectively formed with flat surfaces, and the distance between the flat surfaces facing each other in the divided section is a distance from the base. The distance between the farthest part of the material is larger than the distance between the part closest to the substrate, and the surface roughness Ra of the flat surface is 0.3 μm or less.

According to one aspect of the embodiment, it is possible to provide a split sputtering target which can easily confirm the adhesion state of the bonding material to the side surface of the target facing the split part, and can easily remove the adhesion The bonding material on the side surface of the target material facing each other in the divided part.

1‧‧‧Split Sputtering Target

10‧‧‧Target

11‧‧‧Side

12‧‧‧Flat surface

12a‧‧‧upper end

12b‧‧‧Lower end

13‧‧‧Joint surface

14‧‧‧Vertical plane

15‧‧‧Sputtering surface

16‧‧‧Chamfer

20‧‧‧Substrate

30‧‧‧Joint material

40‧‧‧Splitting Department

θ‧‧‧angle

Lt、Lb‧‧‧Interval

Ta‧‧‧Thickness

Tp‧‧‧Height

Fig. 1 is a perspective view of the divided sputtering target of the embodiment.

Figure 2 is a cross-sectional view taken along the arrow A-A line shown in Figure 1.

Fig. 3 is an enlarged cross-sectional view of the cross-sectional shape of the divided portion of Modification 1 of the embodiment.

Fig. 4 is an enlarged cross-sectional view of the cross-sectional shape of the divided portion of Modification 2 of the embodiment.

Fig. 5 is an enlarged cross-sectional view of the cross-sectional shape of the division part of Modification 3 of the embodiment.

Implementation form

Hereinafter, the embodiment of the split sputtering target disclosed in this case will be described with reference to the drawing style. In addition, the relationship between the dimensions of the elements of the drawing, the ratio of the elements, etc. may be different from reality. In addition, among the drawings, there will be parts that include the relationship or ratio of each other's dimensions.

First, the outline of the divided sputtering target 1 of the embodiment will be described with reference to FIG. 1. FIG. Fig. 1 is a perspective view of the divided sputtering target 1 of the embodiment.

The split sputtering target 1 has a plurality of target materials 10, a base material 20, and a bonding material 30. In addition, a plurality of target materials 10 are arranged side by side on the base material 20, and the target materials 10 and the base material 20 are joined by the joining material 30 to form the split sputtering target 1.

The plurality of target materials 10 are each formed in a flat plate shape having substantially the same size, for example. The target material 10 is formed, for example, in a rectangular shape in plan view, and is arranged on the substrate 20 in a row with a predetermined interval therebetween.

For example, in Figure 1, six target materials 10 are arranged in a matrix. In addition, the plurality of targets 10 does not need to be arranged in a matrix, and may be arranged in a row, for example.

The material of the target 10 is, for example, ITO (Indium Tin Oxide). On the other hand, the material of the target 10 is not limited to ITO, and IGZO (Indium Gallium Zinc Oxide) or AZO (Aluminum Zinc Oxide) can be used.

The substrate 20 has a shape corresponding to the size of the desired divided sputtering target 1. The material of the substrate 20 is, for example, copper with good electrical conductivity or thermal conductivity, or copper phosphate, titanium, aluminum, stainless steel, or the like.

The joining material 30 joins the target material 10 and the base material 20. As the bonding material 30, for example, a soldering material mainly composed of indium, tin, or the like can be used. For example, when ITO is used for the target 10, indium can be used for the bonding material 30.

Here, as shown in FIG. 1, in the split sputtering target 1, the target materials 10 are arranged at a certain interval between each other, whereby a split portion 40 is formed between a pair of adjacent target materials 10. Next, the detailed structure of the dividing unit 40 will be described with reference to FIG. 2.

Fig. 2 is a cross-sectional view taken along the arrow A-A line shown in Fig. 1, and is an enlarged cross-sectional view of the divided portion 40 and its vicinity. As shown in FIG. 2, in the dividing portion 40, the side surfaces 11 of a pair of adjacent target materials 10 are opposed to each other.

Here, in the embodiment, flat surfaces 12 are formed on at least a part of the side surfaces 11 facing each other. In FIG. 2, flat surfaces 12 are respectively formed on the entire opposite side surfaces 11.

In addition, with regard to the interval between the flat surfaces 12 facing each other in the divided portion 40, the interval Lt of the portion farthest from the base 20 is larger than the interval Lb of the portion closest to the base 20. Wherein, the interval Lt is the distance between the upper end 12a of the flat surface 12 furthest from the substrate 20, and the interval Lb is the distance between the lower end 12b of the flat surface 12 closest to the substrate 20. In other words, in the divided portion 40, the gap formed by the flat surfaces 12 is opened upward to have a wide end.

Thereby, when recognizing from above, the recognition of the side surface 11 (flat surface 12) can be easily performed. Therefore, according to the embodiment, the adhesion state of the bonding material 30 to the side surface 11 of the target material 10 facing the divided portion 40 can be easily confirmed.

In the embodiment, the surface roughness Ra of the flat surface 12 is 0.3 μm or less. Here, the surface roughness is the arithmetic average roughness Ra, and the following description is the same. In this way, by processing the flat surface 12 to have a surface roughness Ra of 0.3 μm or less, the bonding material 30 adhering to the flat surface 12 can be easily removed.

This is because by setting the surface roughness Ra of the flat surface 12 to 0.3 μm or less, the anchoring effect (anchoring effect) on the surface of the flat surface 12 can be reduced, and the adhesion of the bonding material 30 to the flat surface 12 can be reduced. .

That is, in the embodiment, by making the interval Lt of the part farthest from the base material 20 larger than the interval Lb of the part closest to the base material 20, and the surface roughness Ra of the flat surface 12 is set to 0.3 μm or less , And the attachment state of the bonding material 30 to the side surface 11 of the target material 10 facing in the divided portion 40 can be easily confirmed, and the adhesion to the side surface 11 of the target material 10 facing in the divided portion 40 can be easily removed Joining material 30. Therefore, if the split sputtering target 1 of the embodiment is used, it is possible to stably perform sputtering film formation for a long period of time.

In addition, in the divided portion 40, the difference between the interval Lt of the part farthest from the base material 20 and the interval Lb of the part closest to the base material 20 is preferably 0.1 mm or more. Thereby, the gap formed by the flat surfaces 12 is formed to widen toward the upper end, so that the adhesion state of the bonding material 30 to the side surface 11 of the target material 10 facing each other in the divided portion 40 can be more easily confirmed.

In addition, the difference between the interval Lt of the part farthest from the substrate 20 and the interval Lb of the part closest to the substrate 20 is preferably 0.2 mm or more, more preferably 0.3 mm or more.

Furthermore, in the divided portion 40, the interval Lt of the portion farthest from the base 20 may be 0.2 mm or more and 0.7 mm or less, and more preferably 0.3 mm or more and 0.6 mm or less. In addition, the interval Lb of the portion closest to the substrate 20 may be 0.1 mm or more and 0.5 mm or less, and more preferably 0.1 mm or more and 0.3 mm or less.

By setting the interval Lt and the interval Lb to the above-mentioned intervals, the visibility of the side surface 11 (flat surface 12) visible from above is ensured, and the area of the bonding material 30 exposed upward from the dividing portion 40 is reduced. Therefore, according to the embodiment, when sputtering the divided sputtering target 1 into a film, the bonding material 30 exposed by the divided portion 40 can be prevented from becoming an impurity.

Furthermore, in the embodiment, by processing the flat surface 12 to have a surface roughness Ra of 0.3 μm or less, since the anchoring effect on the flat surface 12 can be reduced as described above, it is possible to prevent the bonding material 30 from adhering to the flat surface 12 The situation.

Thereby, it is possible to suppress the generation of metal fine particles caused by the bonding material 30 adhering to the side surface 11 (flat surface 12) when performing sputtering film formation. Therefore, according to the embodiment, the sputtering film formation by the split sputtering target 1 can be stably performed.

In addition, the surface roughness Ra of the flat surface 12 is preferably 0.1 μm or less, and more preferably 0.001 μm or more and 0.05 μm or less. In this way, by making the surface roughness Ra of the flat surface 12 smaller, the adhesion of the bonding material 30 to the flat surface 12 can be further suppressed. Furthermore, by setting the surface roughness Ra to 0.001 μm or more, the increase in processing cost can be suppressed, and therefore the increase in the manufacturing cost of the split sputtering target 1 can be suppressed.

Furthermore, in the embodiment, as shown in FIG. 2, when the side surface 11 is viewed in cross section, the angle θ formed by the flat surface 12 and the bonding surface 13 of the target 10 bonded to the substrate 20 may be less than 90° . That is, the two flat surfaces 12 facing each other can be respectively inclined in a direction that can be recognized from above.

Thereby, the corner part formed in the upper end part 12a of the flat surface 12 can be made into an obtuse angle. Therefore, according to the embodiment, since the corner portion formed at the upper end portion 12a is not easily broken, the reliability of the split sputtering target 1 can be improved.

Furthermore, by making the corners formed on the upper end 12a of the flat surface 12 an obtuse angle, it is possible to suppress the arc phenomenon generated from the corners during sputtering film formation. This is because the arc phenomenon may be caused by the concentration of electric charges on the corners of the target 10 during sputtering film formation, but by making the corners an obtuse angle, the concentration of electric charges can be suppressed. Therefore, according to the embodiment, the sputtering film formation by the split sputtering target 1 can be stably performed.

In addition, among the two facing flat surfaces 12, the angle θ of one flat surface 12 and the angle θ of the other flat surface 12 may be the same angle or different angles.

Furthermore, it is not necessary to incline the two flat surfaces 12 facing each other. For example, as shown in FIG. 3, it may be formed so that only the flat surface 12 of one side (the left side in FIG. 3) is inclined, and the flat surface 12 of the other side (the right side in FIG. 3) is separated from the joining surface 13 Stand up roughly vertically. Fig. 3 is an enlarged cross-sectional view showing the cross-sectional shape of the dividing portion 40 of Modification 1 of the embodiment.

Even when the dividing portion 40 is constructed according to the cross-sectional shape shown in FIG. 3, the gap formed by the flat surfaces 12 reciprocally forms an end widening obliquely upward. Therefore, as in the embodiment, the side surface 11 (flat Face 12) identification becomes easier.

Fig. 4 is an enlarged cross-sectional view showing the cross-sectional shape of the dividing portion 40 in Modification 2 of the embodiment. In this modification 2, a vertical surface 14 that rises perpendicularly from the joint surface 13 is formed on the side surface 11 between the flat surface 12 and the joint surface 13. That is, in Modification 2, the side surface 11 has an upper flat surface 12 and a lower vertical surface 14, and between the flat surface 12 and the vertical surface 14, the lower end portion 12b of the flat surface 12 is arranged.

Even in this modification 2, by making the distance Lt between the upper end portions 12a larger than the distance Lb between the lower end portions 12b of the flat surface 12, it is also easy to confirm that the bonding material 30 opposes the split portion 40. The attachment state of the side surface 11 of the target 10.

Furthermore, in Modification 2, the ratio of the height Tp of the vertical surface 14 to the thickness Ta of the target 10 can be set to 0.2 or less. Thereby, the size of the gap between the ends formed by the flat surfaces 12 can be made wide enough to ensure that the vertical surface 14 can be recognized.

In addition, in Modification 2, the vertical surface 14 and the joint surface 13 do not necessarily need to be vertical, and the angle formed by the vertical surface 14 and the joint surface 13 may be within the range of 90°±3°.

Fig. 5 is an enlarged cross-sectional view showing the cross-sectional shape of the dividing portion 40 in Modification 3 of the embodiment. In this modification 3, a chamfered portion 16 is formed on the side surface 11 between the flat surface 12 and the sputtering surface 15. That is, in Modification 3, the side surface 11 has a flat surface 12 on the lower side and a chamfered portion 16 on the upper side. Between the flat surface 12 and the chamfered portion 16, the upper end portion 12a of the flat surface 12 is arranged. .

Even in this modification 3, the distance Lt between the upper end portions 12a is made larger than the distance Lb between the lower end portions 12b of the flat surface 12, so that it can be easily confirmed that the bonding material 30 is opposed to the target facing in the divided portion 40. The attachment state of the side surface 11 of the material 10.

Furthermore, in Modification 3, by forming the chamfered portion 16 on the upper side of the flat surface 12, the corner portion formed on the upper end portion 12a of the flat surface 12 can be further made an obtuse angle. Therefore, according to Modification 3, the corner formed at the upper end portion 12a can be made less likely to break. In addition, when performing sputtering film formation, the arc phenomenon generated from the corner can be further suppressed.

In addition, both the vertical surface 14 shown in Modification Example 2 and the chamfered portion 16 shown in Modification Example 3 may be formed on the side surface 11 of the target 10. That is, the side surface 11 may be formed into the chamfered portion 16, the flat surface 12, and the vertical surface 14 in this order from top to bottom. In addition, at this time, the upper end portion 12 a of the flat surface 12 is arranged between the chamfered portion 16 and the flat surface 12, and the lower end portion 12 b of the flat surface 12 is arranged between the vertical surface 14 and the flat surface 12.

In the embodiment and modification examples described here, the above-mentioned flat surface 12 may be formed on at least a part of the divided portion 40 formed on the target 10. Thereby, in the divided portion 40 forming the flat surface 12, the adhesion state of the bonding material 30 to the side surface 11 can be easily confirmed.

Furthermore, it is more preferable to form the above-mentioned flat surface 12 on all the divided portions 40 formed on the target material 10. Thereby, in all the divided parts 40 of the target material 10, the adhesion state of the bonding material 30 to the side surface 11 can be easily confirmed, and in all the divided parts 40, the bonding material 30 adhering to the side surface 11 can be easily removed. .

Furthermore, all the flat surfaces 12 facing each other in the divided portion 40 formed in the target 10 can be inclined in a recognizable direction from above. Thereby, the corners formed on the upper end 12a of all the flat surfaces 12 can be made obtuse angles, and the corners formed on the upper end 12a are not easily broken in all the divided portions 40 of the target material 10. Therefore, the reliability of the split sputtering target 1 can be further improved.

Furthermore, since the arc phenomenon during the sputtering film formation can be further suppressed, the sputtering film formation by the divided sputtering target 1 can be performed more stably.

(Example)

Example 1

10% by mass of SnO ₂ ^{powder with a specific surface area (BET specific surface area) of 5 m 2} /g as measured by the BET (Brunauer-Emmett-Teller, Buert) method and In ₂ with a BET specific surface area of 5 m ^{2 /g} The O ₃ powder was 90% by mass, and the zirconia balls were mixed with a ball mill in a tank to prepare raw material powders.

In this tank, 0.3% by mass of acrylic latex binder, 0.5% by mass of polycarboxylic acid amine, and 20% by mass of water were added to 100% by mass of the raw material powder, and mixed with a ball mill to prepare a slurry. Next, the prepared slurry was poured into a metal mold arranged with a filter interposed therebetween, and drained to obtain a molded body.

The formed body was heated from room temperature to 1600°C at a temperature increase rate of 300°C/h, and maintained for 12 hours, and then cooled at a temperature decrease rate of 50°C/h, thereby calcining the formed body to produce a calcined body. Then, the calcined body is cut into a predetermined size.

The obtained calcined body was subjected to grinding processing to obtain two ITO target materials 10 with a thickness of 8 mm. The side surfaces of the two target materials 10 are cut, and a side surface 11 having an inclination of θ=89.6° is provided. Then, the side surface 11 of the two targets 10 was polished with the #1000 grinding stone manufactured by Mitsui Grinding Stone Co., Ltd., and then polished with the diamond polishing pad #5000 manufactured by Noritake Co., Ltd. to a surface roughness Ra below 0.02μm. , To form a flat surface 12. The surface roughness Ra was measured using a surface roughness measuring machine manufactured by Mitutoyo Co., Ltd.

Next, the obtained two pieces of target material 10 are arranged on a copper substrate 20 and joined to obtain a split sputtering target 1. In addition, the bonding material 30 is made of indium, and the interval Lt of the part farthest from the base material 20 is 0.2 mm, and the interval Lb of the part closest to the base material 20 is 0.1 mm (that is, Lt-Lb=0.1 mm) arranged on the base material 20.

Examples 2 to 33

Two pieces of ITO target material 10 were obtained by the same method as in Example 1. The angle θ between the flat surface 12 and the joining surface 13 of the two target materials 10 and the surface roughness Ra of the flat surface 12 are processed to the values in the first table. In addition, the two targets 10 are arranged and joined to the base material so that the distance Lt between the part farthest from the base material 20 and the distance Lb between the part closest to the base material 20, and Lt-Lb becomes the value in the first table 20 to obtain a segmented sputtering target 1.

Comparative example 1

Two pieces of ITO target material 10 were obtained by the same method as in Example 1. The two target materials 10 are processed so that the angle between the flat surface 12 and the joining surface 13 is θ=90°, and the surface roughness Ra of the flat surface 12 is 0.02 μm or less. Furthermore, the two target materials were set so that the distance Lt between the part farthest from the substrate 20 was 0.5 mm, and the distance Lb between the part closest to the substrate 20 was 0.5 mm (that is, Lt-Lb was zero). 10 are arranged and joined on the substrate 20 to obtain a split sputtering target 1.

Comparative example 2

Two pieces of ITO target material 10 were obtained by the same method as in Example 1. The angle θ between the flat surface 12 and the joining surface 13 of the two target materials 10 is processed to the value in the first table, and the surface roughness Ra of the flat surface 12 is processed to 0.4 μm. Furthermore, the two target materials 10 are aligned and joined to the base so that the distance Lt between the part farthest from the base material 20 and the distance Lb between the part closest to the base material 20, and Lt-Lb becomes the value in Table 1. Material 20 to obtain a split sputtering target 1.

Next, the visibility of the divided portions 40 of the divided sputtering targets 1 of Examples 1 to 33 and Comparative Examples 1 and 2 obtained above was visually evaluated. The evaluation criteria are as follows.

◎: Very good recognizability

○: Good identification

△: Slightly poor recognizability

×: Poor recognition

Next, with respect to the divided sputtering targets 1 of Examples 1 to 33 and Comparative Examples 1 and 2, the removal of indium attached to the side surface 11 of the divided portion 40 was performed. In this removal operation, the divided portion 40 is visually confirmed, and the part where the indium is confirmed to be adhered is removed with a metal spatula.

Next, two pieces of target materials 10 were peeled off from the split sputtering targets 1 of Examples 1 to 33 and Comparative Examples 1 and 2, and the degree of adhesion of indium to the side surface 11 was visually evaluated. The evaluation criteria are as follows.

◎: No In adhesion

○: Slight In adhesion

△: A small amount of In adheres

×: There is a large amount of In attached

Table 1 shows: the thickness Ta of the target material 10 in the above-mentioned Examples 1 to 33 and Comparative Examples 1 and 2; the interval Lt of the part farthest from the substrate 20; the interval Lb of the part closest to the substrate 20; Lt-Lb; the angle θ between the flat surface 12 and the joining surface 13 in the target material 1 and the target material 2;

Comparing Comparative Example 1 in which the interval Lb and the interval Lt in the dividing portion 40 are the same, and Examples 1 to 33 in which the interval Lt is larger than the interval Lb in the dividing portion 40, it can be seen that by making the interval Lt larger than the interval Lb , The recognizability of the dividing part 40 can be improved.

Furthermore, comparing the comparative example 2 in which the surface roughness Ra of the flat surface 12 is greater than 0.3 μm and the examples 1 to 33 in which the surface roughness Ra of the flat surface 12 is less than 0.3 μm, it can be seen that by comparing the surface roughness of the flat surface 12 The roughness Ra is set to 0.3 μm or less, and the bonding material 30 (indium) adhering to the side surface 11 of the target 10 facing the divided portion 40 can be easily removed.

In addition, although the surface roughness Ra of the flat surface 12 of Comparative Example 1 is 0.3 μm or less, the division 40 is poor in visibility, and therefore it is difficult to confirm the bonding material 30 (indium) adhering to the side surface 11. Therefore, the bonding material 30 cannot be easily removed, and a large amount of the bonding material 30 is attached to the side surface 11.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-mentioned embodiments, and various changes can be made without departing from the gist. For example, although the flat plate-shaped divided sputtering target is described in the embodiment, the above-mentioned embodiment technique can also be applied to a cylindrical divided sputtering target.

As described above, the divided sputtering target 1 of the embodiment is formed by bonding a plurality of targets 10 to the base material 20. In the divided sputtering target 1, the plurality of targets are arranged at intervals. Among the divided portions 40 formed by using the material 10, at least a part of the side surfaces 11 of the pair of target materials 10 arranged in at least one of the divided portions 40 is formed with a flat surface 12, respectively. In addition, with regard to the distance between the flat surfaces 12 facing each other in the divided portion 40, the distance Lt of the part farthest from the base material 20 is larger than the distance Lb of the part closest to the base material 20, and the surface of the flat surface 12 is rough. The degree Ra is 0.3 μm or less. Thereby, the attachment state of the bonding material 30 to the side surface 11 of the target material 10 facing in the divided portion 40 can be easily confirmed, and the bonding attached to the side surface 11 of the target material 10 facing the divided portion 40 can be easily removed.材30.

Furthermore, in the split sputtering target 1 of the embodiment, the interval Lt between the part formed by the flat surfaces 12 that is the farthest from the substrate 20, and the part formed by the flat surfaces 12 that are the closest to the substrate 20 The difference between the distance Lb is 0.1mm or more. Thereby, it is possible to more easily confirm the adhesion state of the bonding material 30 to the side surface 11 of the target material 10 facing each other in the divided portion 40.

In addition, in the split sputtering target 1 of the embodiment, in the side surface 11, between the flat surface 12 and the bonding surface 13 bonded to the base material 20, a vertical surface that rises substantially perpendicularly from the bonding surface 13 is formed. 14. The ratio of the height Tp of the vertical surface 14 to the thickness Ta of the target 10 is set to 0.2 or less. Thereby, the size of the widened gap between the ends formed by the flat surfaces 12 can be sufficiently ensured to the extent that the vertical surface 14 can be visually recognized.

In addition, in the split sputtering target 1 of the embodiment, the distance Lt between the portions formed by the flat surfaces 12 that is the farthest from the substrate 20 is 0.2 mm or more and 0.7 mm or less, and the distance between the flat surfaces 12 is The interval Lb of the nearest part of the base material 20 is 0.1 mm or more and 0.5 mm or less. With this, when sputtering the divided sputtering target 1 to form a film, it is possible to prevent the bonding material 30 exposed from the divided portion 40 from becoming an impurity.

Furthermore, in the split sputtering target 1 of the embodiment, the distance Lt between the portions formed by the flat surfaces 12 that is farthest from the substrate 20 is 0.3 mm or more and 0.6 mm or less, and the flat surfaces 12 are formed by each other. The interval Lb of the portion closest to the base 20 is 0.1 mm or more and 0.3 mm or less. With this, when sputtering the divided sputtering target 1 to form a film, it is possible to further suppress the bonding material 30 exposed from the divided portion 40 from becoming an impurity.

In addition, in the divided sputtering target 1 of the embodiment, the surface roughness Ra of the flat surface 12 is 0.1 μm or less. Thereby, the adhesion of the bonding material 30 to the flat surface 12 can still be suppressed.

In addition, in the divided sputtering target 1 of the embodiment, the surface roughness Ra of the flat surface 12 is 0.001 μm or more and 0.05 μm or less. Thereby, the adhesion of the bonding material 30 to the flat surface 12 can be further suppressed.

Furthermore, in the split sputtering target 1 of the embodiment, a flat surface 12 is formed on at least a part of the side surface 11 of the target 10 arranged in all the split portions 40, and the flat surface 12 is formed in all the split portions 40 facing each other. The distance between the flat surfaces 12 is greater than the distance Lt between the part farthest from the substrate 20 and the distance Lb between the part closest to the substrate 20, and the surface roughness Ra of the flat surface 12 is 0.3 μm or less. Thereby, in all the divided parts 40 of the target 10, the adhesion state of the bonding material 30 to the side surface 11 can be easily confirmed, and the bonding material 30 attached to the side surface 11 of the target 10 can be easily removed.

In addition, in the divided sputtering target 1 of the embodiment, the flat surface 12 is formed on at least a part of the side surface 11 of the target 10 where all the divided portions 40 are arranged, and the flat surface is formed in all the divided portions 40. The difference between the distance Lt of the part formed by the 12 reciprocally farthest from the substrate 20 and the distance Lb of the part formed by the flat surfaces 12 that is the closest to the substrate 20 is 0.1 mm or more. Thereby, in all the divided parts 40 of the target material 10, the adhesion state of the bonding material 30 to the side surface 11 of the target material 10 can be confirmed more easily.

Further effects or modifications can be easily derived by the industry. Therefore, the broader aspects of the present invention are as described above, and are not limited to the specific detailed description and representative embodiments. Therefore, various changes can be made without departing from the spirit or scope of the general inventive concept defined by the scope of the attached patent application and its equivalents.

1‧‧‧Split Sputtering Target

10‧‧‧Target

11‧‧‧Side

12‧‧‧Flat surface

12a‧‧‧upper end

12b‧‧‧Lower end

13‧‧‧Joint surface

20‧‧‧Substrate

30‧‧‧Joint material

40‧‧‧Splitting Department

θ‧‧‧angle

Lt、Lb‧‧‧Interval

Claims (8)

A divided sputtering target is formed by joining a plurality of targets to a substrate. In the divided sputtering target: among the divided portions formed by arranging the aforementioned plurality of targets at intervals, in At least a part of the side surfaces of the pair of target materials on which at least a part of the divided portion is arranged is each formed with a flat surface. Regarding the distance between the flat surfaces facing each other in the divided portion, the portion farthest from the base material The interval is greater than the interval of the portion closest to the substrate. The surface roughness Ra of the flat surface is 0.3μm or less. In the side surface, between the flat surface and the bonding surface bonded to the substrate, A vertical surface that rises substantially perpendicularly from the joint surface is formed, and the ratio of the height of the vertical surface to the thickness of the target is 0.2 or less. The split sputtering target described in the first item of the scope of patent application, wherein the distance between the part formed by the flat surfaces that is the farthest from the substrate and the part formed by the flat surfaces is the closest to the substrate The difference between the interval of the part is 0.1mm or more. The split sputtering target described in the first or second claim of the scope of patent application, wherein the distance between the portions formed by the flat surfaces and the farthest part from the substrate is 0.2 mm or more and 0.7 mm or less, The distance between the portions formed by the flat surfaces closest to the base material is 0.1 mm or more and 0.5 mm or less. The split sputtering target described in the first or second claim of the scope of patent application, wherein the distance between the part formed by the flat surfaces and the farthest part from the substrate is 0.3 mm or more and 0.6 mm or less, and the flat surface The distance between the surfaces formed by the nearest part of the base material is 0.1 mm or more and 0.3 mm or less. The split sputtering target described in the first or second patent application, wherein the surface roughness Ra of the flat surface is 0.1 μm or less. The split sputtering target described in the first or second patent application, wherein the surface roughness Ra of the flat surface is 0.001 μm or more and 0.05 μm or less. The split sputtering target described in the first item of the scope of patent application, wherein the flat surface is formed on at least a part of the side surface of the target material arranged in all the split portions, and the flat surface is formed in all the split portions With respect to the distance between the flat surfaces facing each other, the distance between the portion farthest from the substrate is larger than the distance between the portion closest to the substrate, and the surface roughness Ra of the flat surface is 0.3 μm or less. The divided sputtering target described in the first item of the scope of patent application, wherein the flat surface is formed on at least a part of the side surface of the target material arranged in all the divided portions, and in all the divided portions, The distance between the part formed by the flat surfaces that is farthest from the base material and the distance between the flat surfaces The difference in the distance between the surfaces formed by the portions closest to the base material is 0.1 mm or more.

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