TW201821454A - 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子器件的製造方法 - Google Patents

感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子器件的製造方法 Download PDF

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Publication number
TW201821454A
TW201821454A TW106136960A TW106136960A TW201821454A TW 201821454 A TW201821454 A TW 201821454A TW 106136960 A TW106136960 A TW 106136960A TW 106136960 A TW106136960 A TW 106136960A TW 201821454 A TW201821454 A TW 201821454A
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Taiwan
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group
radiation
compound
reactive group
acid
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TW106136960A
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English (en)
Chinese (zh)
Inventor
白川三千紘
國田一人
高橋秀知
渋谷明規
小川倫弘
東耕平
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日商富士軟片股份有限公司
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Publication of TW201821454A publication Critical patent/TW201821454A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW106136960A 2016-10-27 2017-10-26 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子器件的製造方法 TW201821454A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2016-210913 2016-10-27
JP2016210913 2016-10-27
JP2017044024 2017-03-08
JP2017-044024 2017-03-08
JP2017184476 2017-09-26
JP2017-184476 2017-09-26

Publications (1)

Publication Number Publication Date
TW201821454A true TW201821454A (zh) 2018-06-16

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Family Applications (1)

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TW106136960A TW201821454A (zh) 2016-10-27 2017-10-26 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子器件的製造方法

Country Status (3)

Country Link
JP (1) JPWO2018079449A1 (ja)
TW (1) TW201821454A (ja)
WO (1) WO2018079449A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110716390A (zh) * 2018-07-11 2020-01-21 东京应化工业株式会社 抗蚀剂组合物以及抗蚀剂图案形成方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102640614B1 (ko) * 2018-08-21 2024-02-27 후지필름 가부시키가이샤 약액, 약액 수용체
JP7156205B2 (ja) * 2018-08-29 2022-10-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
EP4227288A1 (en) * 2020-10-09 2023-08-16 Hodogaya Chemical Co., Ltd. Adamantane compound, organic electroluminescent element and electronic device
JP2023136925A (ja) 2022-03-17 2023-09-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2023136980A (ja) 2022-03-17 2023-09-29 信越化学工業株式会社 レジスト材料及びパターン形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007065503A (ja) * 2005-09-01 2007-03-15 Osaka Prefecture Univ レジスト組成物
JP5083568B2 (ja) * 2007-01-22 2012-11-28 日産化学工業株式会社 ポジ型感光性樹脂組成物
JP6035887B2 (ja) * 2011-06-21 2016-11-30 セントラル硝子株式会社 ポジ型レジスト組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110716390A (zh) * 2018-07-11 2020-01-21 东京应化工业株式会社 抗蚀剂组合物以及抗蚀剂图案形成方法

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WO2018079449A1 (ja) 2018-05-03
JPWO2018079449A1 (ja) 2019-09-19

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