TW201735105A - 壓印設備，壓印方法及製造物品的方法 - Google Patents
壓印設備，壓印方法及製造物品的方法 Download PDFInfo
- Publication number
- TW201735105A TW201735105A TW105138272A TW105138272A TW201735105A TW 201735105 A TW201735105 A TW 201735105A TW 105138272 A TW105138272 A TW 105138272A TW 105138272 A TW105138272 A TW 105138272A TW 201735105 A TW201735105 A TW 201735105A
- Authority
- TW
- Taiwan
- Prior art keywords
- article
- mold
- processing region
- heat release
- region
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000012545 processing Methods 0.000 claims abstract description 118
- 239000000463 material Substances 0.000 claims abstract description 84
- 238000010521 absorption reaction Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 16
- 238000004049 embossing Methods 0.000 claims description 11
- 238000012546 transfer Methods 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 238000003303 reheating Methods 0.000 claims 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000007246 mechanism Effects 0.000 description 69
- 238000010438 heat treatment Methods 0.000 description 39
- 238000012937 correction Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 15
- 238000009826 distribution Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000015654 memory Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910001026 inconel Inorganic materials 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000852 hydrogen donor Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015254740A JP2017118054A (ja) | 2015-12-25 | 2015-12-25 | インプリント装置、インプリント方法、および物品の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201735105A true TW201735105A (zh) | 2017-10-01 |
Family
ID=59089850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105138272A TW201735105A (zh) | 2015-12-25 | 2016-11-22 | 壓印設備，壓印方法及製造物品的方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2017118054A (enExample) |
| KR (1) | KR20180096770A (enExample) |
| TW (1) | TW201735105A (enExample) |
| WO (1) | WO2017110032A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102463923B1 (ko) * | 2017-09-18 | 2022-11-07 | 에스케이하이닉스 주식회사 | 임프린트 패턴 형성 방법 및 임프린트 장치 |
| JP7061895B2 (ja) * | 2018-02-27 | 2022-05-02 | Hoya株式会社 | インプリントモールド用基板、マスクブランク及びインプリントモールドの製造方法 |
| TWI771623B (zh) * | 2018-11-08 | 2022-07-21 | 日商佳能股份有限公司 | 壓印裝置和產品製造方法 |
| JP7286391B2 (ja) * | 2019-04-16 | 2023-06-05 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005045168A (ja) * | 2003-07-25 | 2005-02-17 | Tokyo Electron Ltd | インプリント方法およびインプリント装置 |
| WO2006068068A1 (ja) * | 2004-12-20 | 2006-06-29 | Komatsu Industries Corp. | 温調プレートおよび熱転写プレス機械 |
| ATE549294T1 (de) * | 2005-12-09 | 2012-03-15 | Obducat Ab | Vorrichtung und verfahren zum transfer von mustern mit zwischenstempel |
| JP5686779B2 (ja) * | 2011-10-14 | 2015-03-18 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| JP5935385B2 (ja) | 2012-02-27 | 2016-06-15 | 大日本印刷株式会社 | ナノインプリント用レプリカテンプレートの製造方法及びレプリカテンプレート |
| US10359696B2 (en) * | 2013-10-17 | 2019-07-23 | Canon Kabushiki Kaisha | Imprint apparatus, and method of manufacturing article |
-
2015
- 2015-12-25 JP JP2015254740A patent/JP2017118054A/ja not_active Withdrawn
-
2016
- 2016-11-10 KR KR1020187021163A patent/KR20180096770A/ko not_active Ceased
- 2016-11-10 WO PCT/JP2016/004859 patent/WO2017110032A1/en not_active Ceased
- 2016-11-22 TW TW105138272A patent/TW201735105A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017118054A (ja) | 2017-06-29 |
| WO2017110032A1 (en) | 2017-06-29 |
| KR20180096770A (ko) | 2018-08-29 |
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