TW201727729A - 保護帶及半導體裝置之製造方法 - Google Patents

保護帶及半導體裝置之製造方法 Download PDF

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Publication number
TW201727729A
TW201727729A TW105133488A TW105133488A TW201727729A TW 201727729 A TW201727729 A TW 201727729A TW 105133488 A TW105133488 A TW 105133488A TW 105133488 A TW105133488 A TW 105133488A TW 201727729 A TW201727729 A TW 201727729A
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Taiwan
Prior art keywords
adhesive layer
wafer
protective tape
adhesive
layer
Prior art date
Application number
TW105133488A
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English (en)
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TWI747845B (zh
Inventor
Hironobu Moriyama
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Dexerials Corp
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Publication of TW201727729A publication Critical patent/TW201727729A/zh
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Publication of TWI747845B publication Critical patent/TWI747845B/zh

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Abstract

抑制晶圓之破裂，並且使半導體晶片之構裝時之焊接性變得良好。具有下述步驟：將依序具有接著劑層11、熱塑性樹脂層12及基材膜層13之保護帶10貼附於形成有突起電極22之晶圓21面之步驟；對晶圓21之保護帶10貼附面之相反面進行研磨之步驟；將黏著帶30貼附於晶圓21之研磨面之步驟；使接著劑層11殘留而將保護帶10剝離，並將其他層去除之步驟；對貼附有黏著帶30之晶圓21進行切割而獲得單片半導體晶片之步驟；及於切割前使接著劑層11硬化之步驟；硬化後之接著劑層11之儲存剪切彈性模數為3.0E+08 Pa~5.0E+09 Pa，貼附前之保護帶10之接著劑層11厚度與突起電極22高度之比(貼附前之接著劑層厚度/突起電極高度)為1/30~1/6。

Description

保護帶及半導體裝置之製造方法
本發明係關於一種用於製造半導體裝置之保護帶及半導體裝置之製造方法。本申請係以2015年10月19日於日本提出申請之申請號特願2015-205647為基礎而主張優先權，該申請係藉由參照而援用至本申請中。
先前，覆晶構裝用之半導體製造製程之後續步驟係藉由如下方式進行。首先，為了保護突起電極而將稱為背面研磨帶(Back Grind Tape)之保護片或帶貼合於形成有多個突起電極(凸塊)之晶圓之突起電極形成面，於該狀態下將突起電極形成面之相反面研削至特定之厚度。研削結束後，將背面研磨帶剝離，並對晶圓進行切割而製成各個半導體晶片。繼而，將半導體晶片覆晶構裝於其他半導體晶片或基板上。又，使底部填充劑硬化而對半導體晶片進行補強。
於專利文獻1中記載有使用將熱硬化性樹脂層與熱塑性樹脂層積層而成之積層片作為背面研磨帶，僅使該積層片之熱硬化性樹脂層殘留於晶圓而將其他層去除之方法。
[專利文獻1]日本專利特開2005-28734號公報
且說，於半導體製造製程中，期待抑制切割時之晶圓破裂(晶圓之龜裂)，並且使半導體晶片構裝時之焊接性變得良好。
然而，對於習知之背面研磨帶而言，於僅使熱硬化性樹脂層殘留於晶圓而將其他層去除時，樹脂會殘留於突起電極上，例如於回焊時會妨礙焊接而導致連接性降低。因此，習知之背面研磨帶難以兼顧切割時之晶圓破裂之抑制與良好之焊接性。
本發明係鑒於此種習知之實際情況而提出者，提供一種可抑制切割時之晶圓破裂並且可使半導體晶片構裝時之焊接性變得良好之半導體裝置之製造方法。
本發明之半導體裝置之製造方法具有下述步驟：將依序具有接著劑層、熱塑性樹脂層及基材膜層之保護帶貼附於形成有突起電極之晶圓面之步驟；對晶圓之保護帶貼附面之相反面進行研磨之步驟；將黏著帶貼附於晶圓之研磨面之步驟；使接著劑層殘留而將保護帶剝離，並將其他層去除之步驟；對貼附有黏著帶之晶圓進行切割而獲得單片半導體晶片之步驟；及於切割前使接著劑層硬化之步驟；硬化後之接著劑層之儲存剪切彈性模數為3.0E+08 Pa~5.0E+09 Pa，貼附前之保護帶之接著劑層厚度與突起電極高度之比(貼附前之接著劑層厚度/突起電極高度)為1/30~1/6。
本發明之保護帶依序具有接著劑層、熱塑性樹脂層及基材膜層，接著劑層貼附於形成有突起電極之晶圓面，硬化後之接著劑層之儲存剪切彈性模數為3.0E+08 Pa~5.0E+09 Pa之範圍，貼附前之接著劑層厚度與突起電極高度之比(貼附前之接著劑層厚度/突起電極高度)為1/30~1/6。
本發明藉由使用依序具有接著劑層、熱塑性樹脂層及基材膜層，硬化後之接著劑層之彈性模數為3.0E+08 Pa~5.0E+09 Pa，貼附前之保護帶之接著劑層厚度與突起電極高度之比(貼附前之接著劑層厚度/突起電極高度)為1/30~1/6之保護帶，可抑制切割時之晶圓破裂，並且可使半導體晶片構裝時之焊接性變得良好。
10‧‧‧保護帶
11‧‧‧接著劑層
12‧‧‧熱塑性樹脂層
13‧‧‧基材膜層
21‧‧‧晶圓
22‧‧‧突起電極
30‧‧‧黏著帶
31‧‧‧黏著劑層
32‧‧‧基材膜層
圖1係表示保護帶之概略之剖視圖。
圖2係表示保護帶貼附步驟之概略之剖視圖。
圖3係表示研磨步驟之概略之剖視圖。
圖4係表示黏著帶貼附步驟之概略之剖視圖。
圖5係表示保護帶剝離步驟之概略之剖視圖。
圖6係表示硬化步驟之概略之剖視圖。
圖7係表示切割步驟之概略之剖視圖。
圖8係表示延伸步驟之概略之剖視圖。
圖9係表示拾取步驟之概略之剖視圖。
圖10係表示構裝步驟之概略之剖視圖。
以下，按照下述順序對本發明之實施形態進行詳細說明。
1.保護帶
2.半導體裝置之製造方法
[保護帶]
本實施形態之保護帶依序具有接著劑層、熱塑性樹脂層及基材膜層，接著劑層貼附於形成有突起電極之晶圓面，硬化後之接著劑層之儲存剪切彈性模數為3.0E+08 Pa~5.0E+09 Pa之範圍，貼附前之保護帶之接著劑層厚度與突起電極高度之比(貼附前之接著劑層厚度/突起電極高度)為1/30~1/6。藉此，可抑制晶圓之破裂，並且可使焊接性變得良好。
圖1係表示保護帶之概略之剖視圖。保護帶10係稱為背面研磨帶，於研磨步驟中保護晶圓免受損傷、破裂、污染等。如圖1所示，保護帶10依序積層有接著劑層11、熱塑性樹脂層12及基材膜層13。
圖2係表示保護帶貼附步驟之概略之剖視圖。保護帶10係將接著劑層11貼附於形成有突起電極22之晶圓21面。
[接著劑層]
貼附於晶圓21前之接著劑層11厚度(以下亦簡稱為「接著劑層之厚度」)與突起電極22高度之比(接著劑層之厚度/突起電極之高度)為1/30~1/6，更佳為1/30~1/10。藉由使接著劑層11厚度與突起電極22高度之比為1/30以上(0.03以上)，於晶圓21被切割時可充分地對突起電極22 進行補強，故而可抑制晶圓21之破裂。又，藉由使接著劑層11厚度與突起電極22高度之比為1/6以下(0.17以下)，於使接著劑層11殘留而將保護帶10剝離，並將其他層(熱塑性樹脂層12與基材膜層13)去除時，突起電極22上之樹脂殘留得以抑制，因此可使焊接性變得良好。
例如，於突起電極22高度為100~300μm之情形時，接著劑層11厚度較佳為10~30μm。
硬化後之接著劑層11之儲存剪切彈性模數為3.0E+08 Pa~5.0E+09 Pa，更佳為1.0E+09 Pa~4.0E+09 Pa。藉由使硬化後之接著劑層11之儲存剪切彈性模數為3.0E+08 Pa以上，於晶圓21被切割時可充分地對突起電極22進行補強，故而可抑制晶圓之破裂。又，藉由使硬化後之接著劑層11之儲存剪切彈性模數為5.0E+09 Pa以下，例如由於接著劑層11中之填料之量不會變的過多，故而可使形成有銲點凸塊作為突起電極22之半導體晶片與電路基板之焊接性變得良好。換言之，於硬化後之接著劑層11之儲存剪切彈性模數超過5.0E+09 Pa之情形時，與硬化後之接著劑層11之儲存剪切彈性模數為5.0E+09 Pa以下之情形時相比，需要增加接著劑層11中之填料之添加量，因此硬化前之接著劑層11之流動性降低而導致焊接性變差。
接著劑層11於60℃之儲存剪切彈性模數(Gn)較佳為1.0E+01 Pa~1.0E+05 Pa。藉由將接著劑層11之儲存剪切彈性模數設為1.0E+01 Pa以上，於將保護帶10貼附於晶圓21時可更有效地抑制接著劑層11之樹脂流動。又，藉由將接著劑層11之儲存剪切彈性模數設為1.0E+05 Pa以下，突起電極22可更容易地貫通接著劑層11，從而可使連接性變得更良 好。
作為用以形成接著劑層11之接著劑組成物，例如可使用熱陰離子硬化型、熱陽離子硬化型、熱自由基硬化型等熱硬化型接著劑組成物、光陽離子硬化型、光自由基硬化型等光硬化型接著劑組成物或將該等併用之接著劑組成物。
以下，作為用以形成接著劑層11之接著劑組成物之一例，對含有膜形成樹脂、環氧樹脂、硬化劑、硬化助劑及填料之熱硬化型接著劑組成物進行說明。
作為膜形成樹脂，可使用苯氧基樹脂、丙烯酸樹脂、環氧樹脂、改質環氧樹脂、胺酯樹脂(urethane resin)等各種樹脂。該等膜形成樹脂可單獨使用1種，亦可將2種以上組合使用。該等之中，就膜形成狀態、連接可靠性等觀點而言，可適宜地使用苯氧基樹脂及丙烯酸樹脂。
作為環氧樹脂，例如可列舉：二環戊二烯型環氧樹脂、環氧丙基醚型環氧樹脂、縮水甘油胺型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、螺環型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、萜烯型環氧樹脂、四溴雙酚A型環氧樹脂、甲酚酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂、α-萘酚酚醛清漆型環氧樹脂、溴化苯酚酚醛清漆型環氧樹脂等。該等環氧樹脂可單獨使用1種，亦可將2種以上組合使用。該等之中，就高接著性、耐熱性之方面而言，可適宜地使用二環戊二烯型環氧樹脂。
作為硬化劑，例如可列舉：酚醛清漆型酚樹脂、脂肪族胺、芳香族胺、酸酐等，該等硬化劑可單獨使用1種，亦可將2種以上組合使 用。該等之中，就硬化物之交聯密度之觀點而言，可適宜地使用酚醛清漆型酚樹脂。
作為硬化助劑，可列舉：2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑等咪唑類、1,8-二氮雜雙環(5,4,0)十一烯-7鹽(DBU鹽)、2-(二甲胺基甲基)苯酚等三級胺類、三苯基膦等膦類、辛酸錫等金屬化合物等。該等之中，較佳為2-乙基-4-甲基咪唑。
作為填料，可使用二氧化矽、氮化鋁、氧化鋁等無機填料。填料較佳為經表面處理，且較佳為親水性之無機填料。作為親水性之無機填料，可列舉無機填料經親水性表面處理劑表面處理而成者。作為親水性表面處理劑，例如可列舉矽烷偶合劑、鈦酸鹽(titanate)系偶合劑、鋁系偶合劑、鋯鋁鹽(zircoaluminate)系偶合劑、Al2O3、TiO2、ZrO2、聚矽氧、硬脂酸鋁等，較佳為矽烷偶合劑。
接著劑組成物中之填料之含量較佳為3~35質量%，亦可設為25~35質量%。藉由將填料之含量設為上述範圍，可容易地將硬化後之接著劑層11之儲存剪切彈性模數調整為上述範圍。填料可單獨使用1種，亦可將2種以上併用。於將2種以上之填料併用之情形時，較佳為使其合計量滿足上述含量之範圍。
又，亦可根據目的而於接著劑組成物中適當摻合矽烷偶合劑、丙烯酸橡膠等彈性體、碳黑等顏料作為其他成分。
[熱塑性樹脂層]
熱塑性樹脂層12例如係由乙烯-乙酸乙烯酯共聚物(EVA：Ethylene Vinyl Acetate)、聚乙烯、聚丙烯、聚醯胺、聚縮醛、聚對酞酸乙二酯、聚對酞酸 丁二酯(polybutylene terephthalate)、氟樹脂、聚伸苯硫醚、聚苯乙烯、ABS(Acrylonitrile Butadiene Styrene，丙烯腈-丁二烯-苯乙烯)樹脂、丙烯酸系樹脂、聚碳酸酯、聚胺酯、聚氯乙烯、聚苯醚等樹脂所構成之層。上述樹脂可單獨使用1種，亦可將2種以上併用。
熱塑性樹脂層12於60℃之儲存剪切彈性模數較佳為1.0E+07 Pa以下。藉由設為此種範圍，可進一步提高接著劑層11之突起電極22之埋入性。
熱塑性樹脂層12之厚度例如可設為5~300μm。
[基材膜層]
作為基材膜層13，可使用聚對酞酸乙二酯、聚乙烯、聚丙烯、聚酯等塑膠膜或由紙、布、不織布等所構成之多孔質基材。
基材膜層13之厚度例如可設為25~200μm。
本實施形態之保護帶10依序具有接著劑層11、熱塑性樹脂層12及基材膜層13，硬化後之接著劑層11之彈性模數為3.0E+08 Pa~5.0E+09 Pa，接著劑層11之厚度與突起電極22之高度之比為1/30~1/6，藉此可抑制晶圓之破裂，並且可使焊接性變得良好。
再者，保護帶並不限定於上述構成，亦可於各層之表面或相鄰之層間形成其他層。
本實施形態之保護帶例如可藉由將依序形成有基材膜層13及熱塑性樹脂層12之積層體與接著劑13層進行層壓而獲得。接著劑層11例如可藉由製備上述熱硬化型之接著劑組成物，使用棒式塗佈機將其塗佈於經剝離處理之基材並使之乾燥而獲得。基材膜層13與熱塑性樹脂層12 之積層體可藉由將熱塑性樹脂擠出至基材膜層13並進行熔融成型而獲得。
<2.半導體裝置之製造方法>
繼而，對使用上述保護帶之半導體裝置之製造方法進行說明。本實施形態之半導體裝置之製造方法具有下述步驟：將上述保護帶10貼附於形成有突起電極22之晶圓21面之步驟；對晶圓22之保護帶貼附面之相反面進行研磨之步驟；將黏著帶貼附於晶圓22之研磨面之步驟；使接著劑層11殘留而將保護帶10剝離，並將其他層去除之步驟；對貼附有黏著帶之晶圓21進行切割而獲得單片半導體晶片之步驟；及於切割前使接著劑層11硬化之步驟。此處，使接著劑層11硬化之硬化步驟只要於進行研磨之步驟、貼附黏著帶之步驟及進行切割步驟之任一步驟前進行即可。如此，藉由在切割前進行接著劑層11之硬化，於切割、拾取、構裝等後續步驟中，可更確實地保護突起電極22。
以下，對具體之半導體裝置之製造方法進行說明。作為具體例而表示之半導體裝置之製造方法係使用上述保護帶，於貼附黏著帶之步驟與進行切割之步驟之間進行硬化步驟。即，作為具體例而表示之半導體裝置之製造方法具有保護帶貼附步驟(A)、研磨步驟(B)、黏著帶貼附步驟(C)、保護帶剝離步驟(D)、使接著劑層硬化之硬化步驟(E)、切割步驟(F)、延伸步驟(G)、拾取步驟(H)及構裝步驟(I)。
[保護帶貼附步驟(A)]
如圖1及圖2所示，於保護帶貼附步驟中，將保護帶10貼附於形成有突起電極22之晶圓21面。就減少空隙、提高晶圓密接性及防止晶圓研削後之晶圓之翹曲之觀點而言，貼附保護帶10之貼附溫度較佳為25℃~100℃， 更佳為40℃~80℃。保護帶10較佳為於貼附於晶圓21前之狀態下滿足上述接著劑層11之厚度與突起電極22之高度之比。
晶圓21具有形成有矽等半導體表面之積體電路、與連接用之突起電極22。晶圓21之厚度並無特別限定，較佳為200~1000μm。
作為突起電極22，例如可列舉由焊料所形成之低熔點凸塊或高熔點凸塊、錫凸塊、銀-錫凸塊、銀-錫-銅凸塊、金凸塊、銅凸塊等。又，突起電極22之高度可於滿足上述接著劑層11之厚度與突起電極22之高度之比之範圍內適當選擇，例如可設為100~300μm。
保護帶10係於突起電極22之形成面與接著劑層11相接之狀態下進行貼合。如圖2所示，凸塊22穿透接著劑層11而埋入熱塑性樹脂層12。
[研磨步驟(B)]
圖3係表示研磨步驟之概略之剖視圖。於研磨步驟中，將貼附有保護帶10之晶圓21之相反面即形成有突起電極22之面之相反面固定於研削裝置進行研磨。研磨通常可進行至晶圓21之厚度成為50~600μm為止。於本實施形態中，藉由滿足上述接著劑層11之厚度與突起電極22之高度之比，可利用接著劑層11對突起電極22進行補強，因此亦可將晶圓21之相反面研磨至50μm以下之厚度為止。
[黏著帶貼附步驟(C)]
圖4係表示黏著帶貼附步驟之概略之剖視圖。於黏著帶貼附步驟中，將黏著帶30貼附於晶圓21之研磨面。黏著帶30稱為切割保護帶(Dicing Tape)，係用以於切割步驟(F)中保護並固定晶圓21而保持至拾取步驟(H) 之帶。
黏著帶30並無特別限定，可使用公知者。一般而言，作為黏著帶30，可使用具有黏著劑層31與基材膜層32者。作為黏著劑層31，例如可列舉聚乙烯系、丙烯酸系、橡膠系、胺酯系等之黏著劑。作為基材膜層32，可使用聚對酞酸乙二酯、聚乙烯、聚丙烯、聚酯等塑膠膜或由紙、布、不織布等所構成之多孔質基材。又，作為黏著帶之貼附裝置及條件，並無特別限定，可使用公知之裝置及條件。
[保護帶剝離步驟(D)]
圖5係表示保護帶剝離步驟之概略之剖視圖。於保護帶剝離步驟中，使接著劑層11殘留而將保護帶10剝離，並將其他層即熱塑性樹脂層12及基材膜層13去除。藉此，僅接著劑層11殘留於晶圓21上。
[硬化步驟(E)]
圖6係表示硬化步驟之概略之剖視圖。於硬化步驟中，使接著劑層11硬化。作為硬化方法及硬化條件，可使用使熱硬化型之接著劑硬化之公知之方法。硬化條件例如可設為100~200℃且1小時以上。
[切割步驟(F)]
圖7係表示切割步驟之概略之剖視圖。於切割步驟中，對貼附有黏著帶30之晶圓21進行切割，獲得單片半導體晶片。作為切割方法，並無特別限定，例如可使用利用晶圓切割機對晶圓21進行切削並切出等公知方法。
[延伸步驟(G)]
圖8係表示延伸步驟之概略之剖視圖。於延伸步驟中，例如使貼合有經分割之多個半導體晶片之黏著帶30沿水平方向延伸而擴大各個半導體晶 片之間隔。
[拾取步驟(H)]
圖9係表示拾取步驟之概略之剖視圖。於拾取步驟中，將貼合固定於黏著帶30上之半導體晶片自黏著帶30之下表面頂出而將其剝離，利用吸嘴吸附該剝離之半導體晶片。所拾取之半導體晶片係收納至晶片托盤中，或搬送至覆晶接合機之晶片搭載噴嘴。
[構裝步驟(I)]
圖10係表示構裝步驟之概略之剖視圖。於構裝步驟中，例如使用NCF(Non Conductive Film，非導電膜)等電路連接材料將半導體晶片與電路基板進行連接。作為電路基板，並無特別限定，可使用聚醯亞胺基板、玻璃環氧基板等塑膠基板、陶瓷基板等。又，作為連接方法，可使用利用加熱接合機、回焊爐等之公知方法。
根據上述半導體裝置之製造方法，可抑制切割時之晶圓21破裂，並且可使半導體晶片之構裝時之焊接性變得良好。又，由於在切割步驟前形成有突起電極22之晶圓21面之接著劑層11發生硬化而對突起電極22進行補強，故而於切割、拾取、構裝等後續步驟中，可更確實地保護突起電極22。又，可良率良好地獲得具有優異之連接可靠性之半導體裝置。
藉由上述半導體裝置之製造方法而獲得之半導體裝置藉由具備具有形成於突起電極22形成面之硬化接著劑層之半導體晶片及具有與突起電極22對向之電極的電路基板，可獲得優異之連接可靠性。
[實施例]
以下，對本發明之實施例進行說明。於本實施例中，製作使 接著劑層、熱塑性樹脂層及基材膜層積層而成之保護帶。使用保護帶依序進行保護帶貼附步驟(A)、研磨步驟(B)、黏著帶貼附步驟(C)、保護帶剝離步驟(D)、硬化步驟(E)、切割步驟(F)、延伸步驟(G)、拾取步驟(H)及構裝步驟(I)，而製作半導體裝置。然後，對切割時有無晶圓破裂及半導體裝置之焊接性進行評價。再者，本發明並不限定於該等實施例。
[儲存剪切彈性模數]
接著劑層及熱塑性樹脂層之儲存剪切彈性模數係使用黏彈性測定裝置而算出。測定條件設定為測定溫度區域0~120℃、升溫速度5℃/min、振動數1Hz、應變0.1%。
[保護帶之製作] <熱塑性樹脂層之製作>
將熱塑性樹脂(丙烯-烯烴共聚物樹脂(Notio PN0040，三井化學股份有限公司公司製造))以乾燥後之厚度成為500μm之方式擠出至PET(Polyethylene terephthalate，聚對酞酸乙二酯)基材(厚度75μm)上並使之熔融成型。熱塑性樹脂層於60℃之儲存剪切彈性模數為1.4E+05 Pa。
<接著劑層之製作>
如表1所示，摻合下述成分製作接著劑層。
膜形成樹脂：苯氧基樹脂(PKHH，Union Carbide股份有限公司公司製造)
膜形成樹脂：丙烯酸共聚物(SG-80，長瀨化成股份有限公司公司製造)
環氧樹脂：二環戊二烯型環氧樹脂(HP7200H，迪愛生股份有限公司公司製造)
硬化劑：酚醛清漆型酚樹脂(TD-2093，迪愛生股份有限公司公司製造)
硬化助劑：2-乙基-4-甲基咪唑(2E4MZ)
填料：二氧化矽(Aerosil RY200，日本艾羅西爾股份有限公司公司製造)
[接著劑層No.1-1]
摻合苯氧基樹脂13.0質量份、環氧樹脂54.8質量份、硬化劑32.4質量份、硬化助劑0.3質量份及填料33質量份而製作接著劑組成物。使用棒式塗佈機將該接著劑組成物以乾燥後之厚度成為20μm之方式塗佈於經剝離處理之PET，並於烘箱中使之乾燥而獲得接著劑層No.1-1。
[接著劑層No.1-2]
使用棒式塗佈機以乾燥後之厚度成為10μm之方式塗佈於經剝離處理之PET，並於烘箱中使之乾燥，除此以外，藉由與接著劑層No.1-1相同之方法獲得接著劑層No.1-2。
[接著劑層No.1-3]
使用棒式塗佈機以乾燥後之厚度成為30μm之方式塗佈於經剝離處理之PET，並於烘箱中使之乾燥，除此以外，藉由與接著劑層No.1-1相同之方法獲得接著劑層No.1-3。
[接著劑層No.1-4]
使用棒式塗佈機以乾燥後之厚度成為5μm之方式塗佈於經剝離處理之PET，並於烘箱中使之乾燥，除此以外，藉由與接著劑層No.1-1相同之方法獲得接著劑層No.1-4。
[接著劑層No.1-5]
使用棒式塗佈機以乾燥後之厚度成為40μm之方式塗佈於經剝離處理 之PET，並於烘箱中使之乾燥，除此以外，藉由與接著劑層No.1-1相同之方法獲得接著劑層No.1-5。
[接著劑層No.2]
摻合丙烯酸共聚物80.0質量份、環氧樹脂54.8質量份、硬化劑32.4質量份、硬化助劑0.3質量份及填料5.0質量份而製備接著劑組成物。使用棒式塗佈機將該接著劑組成物以乾燥後之厚度成為20μm之方式塗佈於經剝離處理之PET，並於烘箱中使之乾燥而獲得接著劑層No.2。
[接著劑層No.3]
摻合苯氧基樹脂13.0質量份、環氧樹脂54.8質量份、硬化劑32.4質量份、硬化助劑0.3質量份及填料55.0質量份而製備接著劑組成物。使用棒式塗佈機將該接著劑組成物以乾燥後之厚度成為20μm之方式塗佈於經剝離處理之PET，並於烘箱中使之乾燥而獲得接著劑層No.3。
[接著劑層No.4]
摻合丙烯酸共聚物160.0質量份、環氧樹脂54.8質量份、硬化劑32.4質量份、硬化助劑0.3質量份及填料5.0質量份而製備接著劑組成物。使用棒式塗佈機將該接著劑組成物以乾燥後之厚度成為20μm之方式塗佈於經剝離處理之PET，並於烘箱中使之乾燥而獲得接著劑層No.4。
[接著劑層No.5]
摻合苯氧基樹脂13.0質量份、環氧樹脂54.8質量份、硬化劑32.4質量份、硬化助劑0.3質量份及填料100.0質量份而製備接著劑組成物。使用棒式塗佈機將該接著劑組成物以乾燥後之厚度成為20μm之方式塗佈於經剝離處理之PET，並於烘箱中使之乾燥而獲得接著劑層No.5。
<實施例1>
對上述熱塑性樹脂層與上述接著劑層No.1-1進行層壓，而製作保護帶。
<實施例2>
對上述熱塑性樹脂層與上述接著劑層No.1-2進行層壓，而製作保護帶。
<實施例3>
對上述熱塑性樹脂層與上述接著劑層No.1-3進行層壓，而製作保護帶。
<實施例4>
對上述熱塑性樹脂層與上述接著劑層No.2進行層壓，而製作保護帶。
<實施例5>
對上述熱塑性樹脂層與上述接著劑層No.3進行層壓，而製作保護帶。
<比較例1>
對上述熱塑性樹脂層與上述接著劑層No.1-4進行層壓，而製作保護帶。
<比較例2>
對上述熱塑性樹脂層與上述接著劑層No.1-5進行層壓，而製作保護帶。
<比較例3>
對上述熱塑性樹脂層與上述接著劑層No.4進行層壓，而製作保護帶。
<比較例4>
對上述熱塑性樹脂層與上述接著劑層No.5進行層壓，而製作保護帶。
[半導體裝置之製作]
將保護帶之接著劑層面貼附於形成有銲點凸塊(φ=250μm，H=200μm，間距=250μm)之晶圓(尺寸：5cm×5cm×厚度700μm)，並使用真空式層壓機於60℃之溫度進行層壓。
繼而，利用研磨機(製品名：DFG8560，迪思科股份有限公司製造)將晶圓之厚度背面研磨至300μm。其後，使接著劑層殘留而將保護帶剝離，並將其他層(PET基材及熱塑性樹脂層)去除。將晶圓上之接著劑層於130℃之烘箱中加熱2小時而使之硬化。然後，對晶圓進行切割而將其單片化為晶片後，利用貼片機搭載於基板(帶助焊劑之金電極)，並於最大260℃之回焊爐中使晶片與基板焊接。
[焊接性之評價]
於將助焊劑塗佈於基板之金電極上並於最大260℃之回焊溫度進行焊接時，將凸塊尺寸之面積設為100%，計測焊料潤濕擴散之面積。將焊料潤濕擴散之面積相對於凸塊尺寸之面積為50%以上之情形評價為焊接性良好，將未達50%之情形評價為焊接性不良。將結果示於下述表2及表3。
[晶圓之破裂]
利用顯微鏡(100倍)對經單片化而成之晶片進行觀察，將存在10μm以上之破裂之情形評價為「×」，將不存在10μm以上之破裂之情形評價為「○」。將結果示於下述表2及表3。
得知於如實施例1~5般使用依序具有接著劑層、熱塑性樹脂層及基材膜層且硬化後之接著劑層之儲存剪切彈性模數為3.0E+08~5.0E+09、接著劑層之厚度與突起電極之高度之比為1/30~1/6之保護帶之情形時，可抑制晶圓之破裂，且焊接性亦良好。
亦得知尤其是於如實施例1、2般使用硬化後之接著劑層之儲存剪切彈性模數為1.0E+09~4.0E+09且接著劑層之厚度與突起電極之高度之比為1/30~1/10之保護帶之情形時，焊接性更良好。
得知於如比較例1般使用接著劑層之厚度與突起電極之高度之比未達1/30之保護帶之情形時，難以抑制晶圓之破裂。
得知於如比較例2般使用接著劑層之厚度與突起電極之高 度之比超過1/6之保護帶之情形時，焊接性不良。
得知於如比較例3般使用硬化後之接著劑層之儲存剪切彈性模數未達3.0E+08之保護帶之情形時，難以抑制晶圓之破裂。
得知於如比較例4般使用硬化後之接著劑層之儲存剪切彈性模數超過5.0E+09之保護帶之情形時，焊接性不良。

Claims (10)

  1. 一種半導體裝置之製造方法，其具有：將依序具有接著劑層、熱塑性樹脂層及基材膜層之保護帶貼附於形成有突起電極之晶圓面之步驟；對該晶圓之該保護帶貼附面之相反面進行研磨之步驟；將黏著帶貼附於該晶圓之研磨面之步驟；使該接著劑層殘留而將該保護帶剝離，並將其他層去除之步驟；對貼附有該黏著帶之晶圓進行切割，獲得單片半導體晶片之步驟；及於該切割前使該接著劑層硬化之步驟；該硬化後之接著劑層之儲存剪切彈性模數為3.0E+08 Pa~5.0E+09 Pa，該貼附前之保護帶之接著劑層厚度與該突起電極高度之比(貼附前之接著劑層厚度/突起電極高度)為1/30~1/6。
  2. 如申請專利範圍第1項之半導體裝置之製造方法，其中，該接著劑層係使用接著劑組成物形成，該接著劑組成物含有膜形成樹脂、熱硬化性樹脂、硬化劑及填料，該接著劑組成物中之填料之含量為3~35質量%。
  3. 如申請專利範圍第1項之半導體裝置之製造方法，其中，該接著劑層係使用接著劑組成物形成，該接著劑組成物含有膜形成樹脂、熱硬化性樹脂、硬化劑及填料，該接著劑組成物中之填料之含量為25~35質量%。
  4. 如申請專利範圍第1至3項中任一項之半導體裝置之製造方法，其中，該貼附前之保護帶之接著劑層厚度為10~30μm。
  5. 如申請專利範圍第1至3項中任一項之半導體裝置之製造方法，其中，該突起電極之高度為100~300μm。
  6. 如申請專利範圍第4項之半導體裝置之製造方法，其中，該突起電極之高度為100~300μm。
  7. 如申請專利範圍第1至3項中任一項之半導體裝置之製造方法，其中，該單片半導體晶片之突起電極為銲點凸塊，該半導體裝置之製造方法還具有於回焊爐使該單片半導體晶片與形成有帶助焊劑之電極的基板接合之構裝步驟。
  8. 一種保護帶，其依序具有接著劑層、熱塑性樹脂層及基材膜層，該接著劑層貼附於形成有突起電極之晶圓面，硬化後之該接著劑層之儲存剪切彈性模數為3.0E+08 Pa~5.0E+09 Pa之範圍，該貼附前之保護帶之接著劑層厚度與該突起電極高度之比(貼附前之接著劑層厚度/突起電極高度)為1/30~1/6。
  9. 如申請專利範圍第8項之保護帶，其中，該接著劑層係使用接著劑組成物形成，該接著劑組成物含有膜形成樹脂、熱硬化性樹脂、硬化劑及填料，該接著劑組成物中之填料之含量為3~35質量%。
  10. 如申請專利範圍第8項之保護帶，其中，該接著劑層係使用接著劑組成物形成， 該接著劑組成物含有膜形成樹脂、熱硬化性樹脂、硬化劑及填料，該接著劑組成物中之填料之含量為25~35質量%。
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